Silicon carbide crystal corrosion device
By designing a second surface with specific height and dimension changes on the furnace cover of the silicon carbide crystal corrosion device, the liquid is guided to move to the inner peripheral wall of the first furnace body, the safety hazards caused by the liquid falling into the KOH solution is solved, and the effect of reducing the liquid falling into the second furnace body is achieved.
Patent Information
- Application Number
- CN202422063613.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-23
- Publication Date
- 2025-06-10
- Estimated Expiration
- 2034-08-23
AI Technical Summary
In the silicon carbide crystal corrosion device, liquefied water vapor attached to the bottom of the furnace cover drips into the KOH solution in the pot, which may cause liquid sputtering in the crucible and cause safety hazards.
A silicon carbide crystal corrosion device is designed, and the furnace cover has a specific second surface, and the height dimension of the second surface gradually increases away from the outer peripheral wall of the first furnace body, and is used to guide the liquid to move toward the inner peripheral wall of the first furnace body, so that the liquid falls to both sides of the second furnace body, reducing the possibility of liquid falling into the second furnace body.
By guiding the liquid to move to the inner peripheral wall of the first furnace body, the liquid falls into the second furnace body, thereby reducing the occurrence of safety hazards.
Smart Images
Figure CN222961622U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of silicon carbide etching equipment, and more specifically, to a silicon carbide crystal etching device. Background Art
[0002] As an emerging core material of the third-generation semiconductor, silicon carbide (SiC) has excellent properties such as a wide bandgap, a high critical breakdown electric field strength, a high electron mobility, and good radiation resistance and chemical stability. This makes it an important substrate wafer material with wide applications and shows good application prospects in fields such as aerospace devices, new energy vehicles, rail transit, and household appliances. Before the silicon carbide crystal etching device operates and heats up, after rising from room temperature to the operating temperature (550°C - 600°C), due to the initial temperature rise, the temperature difference between the condensed water inside the furnace cover and the furnace interior is large, and the temperature difference between the inside and outside of the furnace is large. Therefore, the phenomenon of H20 in the air changing from gas to liquid occurs and then adheres to the lower part of the furnace cover.
[0003] The inventor found through research that the liquefied water droplets adhering to the lower part of the furnace cover drip into the KOH solution in the pot, causing a violent reaction, which may splash out the liquid in the crucible and easily cause potential safety hazards. Summary of the Utility Model
[0004] The purpose of the utility model is to provide a silicon carbide crystal etching device, which can reduce the liquid on the furnace cover from falling into the potassium hydroxide solution, thereby reducing the occurrence of potential safety hazards.
[0005] The embodiments of the utility model are implemented as follows:
[0006] In a first aspect, the utility model provides a silicon carbide crystal etching device, comprising:
[0007] A first furnace body;
[0008] A second furnace body, which is arranged inside the first furnace body and has a spacing between the outer peripheral wall of the second furnace body and the inner peripheral wall of the first furnace body. The second furnace body is used to accommodate etching raw materials;
[0009] A furnace cover, which covers the first furnace body. The furnace cover has a first surface and a second surface opposite to each other. The second surface is closer to the second furnace body than the first surface. The height dimension of the second surface gradually increases in the direction away from the outer peripheral wall of the first furnace body. The second surface is used to guide the liquid on itself to move towards the inner peripheral wall of the first furnace body closer.
[0010] In an optional embodiment, the height dimension of the second surface gradually increases in the direction away from the outer peripheral wall of the first furnace body and towards its own center.
[0011] In an alternative embodiment, the middle part of the furnace cover has a ventilation hole, and the height dimension of the second surface gradually increases in the direction away from the outer peripheral wall of the first furnace body and close to the ventilation hole.
[0012] In an alternative embodiment, the second surface is an arc surface.
[0013] In an alternative embodiment, the second surface includes a plurality of diversion inclined surfaces. The intersection of the plurality of diversion inclined surfaces passes through the middle part of the second surface, and the height dimension of the diversion inclined surface gradually increases in the direction away from the first furnace body.
[0014] In an alternative embodiment, the first furnace body and the second furnace body are coaxially arranged.
[0015] In an alternative embodiment, the second surface is further provided with diversion ribs for diverting the liquid on the second surface towards the inner peripheral wall of the first furnace body.
[0016] In an alternative embodiment, the number of the diversion ribs is multiple. The diversion ribs have opposite first ends and second ends. The first ends point to the middle part of the second surface, and the second ends point to the inner peripheral wall of the first furnace body. The second ends are located between the outer peripheral wall of the second furnace body and the inner peripheral wall of the first furnace body.
[0017] In an alternative embodiment, in the direction from the first end to the second end, the distance between the diversion rib and the bottom wall of the first furnace body gradually decreases.
[0018] In an alternative embodiment, the second surface is further provided with a water absorption member. The water absorption member is located between the inner peripheral wall of the first furnace body and the outer peripheral wall of the second furnace body, and the water absorption member is located on the side of the diversion rib close to the inner peripheral wall of the first furnace body.
[0019] The beneficial effects of the embodiments of the present utility model are as follows: The embodiments of the present utility model provide a silicon carbide crystal corrosion device including a first furnace body, a second furnace body and a furnace cover. The second furnace body is arranged in the first furnace body, and there is a distance between the outer peripheral wall of the second furnace body and the inner peripheral wall of the first furnace body. The second furnace body is used for accommodating corrosion raw materials. The furnace cover covers the first furnace body. The furnace cover has opposite first and second surfaces. The second surface is relatively closer to the second furnace body than the first surface. The height dimension of the second surface gradually increases in the direction away from the outer peripheral wall of the first furnace body. The second surface is used to guide the liquid on itself towards the inner peripheral wall of the first furnace body. When the condensed liquid moves towards the inner peripheral wall of the first furnace body under the action of the second surface, the condensed liquid can fall to both sides of the second furnace body, which can reduce the situation that the condensed liquid falls into the second furnace body, thereby reducing the occurrence of potential safety hazards. Description of the Drawings
[0020] To more clearly illustrate the technical solutions of the embodiments of the present utility model, the following will briefly introduce the drawings required for use in the embodiments. It should be understood that the following drawings only show certain embodiments of the present utility model and should not be regarded as limiting the scope. For those of ordinary skill in the art, without creative efforts, other relevant drawings can also be obtained based on these drawings.
[0021] Figure 1 It is a schematic structural diagram of a silicon carbide crystal etching device provided by an embodiment of the present utility model;
[0022] Figure 2 It is a schematic structural diagram of a silicon carbide crystal etching device provided by other embodiments of the present utility model.
[0023] Icons: 1 - silicon carbide crystal etching device; 100 - first furnace body; 200 - second furnace body; 300 - furnace cover; 310 - first surface; 320 - second surface; 330 - flow guiding rib; 340 - ventilation hole. Detailed implementation manners
[0024] To make the objectives, technical solutions, and advantages of the embodiments of the present utility model clearer, the following will clearly and completely describe the technical solutions in the embodiments of the present utility model with reference to the drawings in the embodiments of the present utility model. Obviously, the described embodiments are some, but not all, of the embodiments of the present utility model. Usually, the components of the embodiments of the present utility model described and shown in the drawings here can be arranged and designed in various different configurations.
[0025] Therefore, the following detailed description of the embodiments of the present utility model provided in the drawings is not intended to limit the scope of the present utility model to be protected, but only represents the selected embodiments of the present utility model. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present utility model.
[0026] It should be noted that: similar reference numerals and letters indicate similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.
[0027] In the description of the present utility model, it should be noted that the orientation or positional relationship indicated by terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the product of this utility model is usually placed during use. It is only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present utility model. In addition, terms such as "first", "second", "third", etc. are only used for distinguishing descriptions and cannot be understood as indicating or implying relative importance.
[0028] In addition, terms such as "horizontal" and "vertical" do not mean that the components are required to be absolutely horizontal or hanging vertically, but can be slightly inclined. For example, "horizontal" only means that its direction is more horizontal relative to "vertical", and does not mean that this structure must be completely horizontal, but can be slightly inclined.
[0029] In the description of the present utility model, it should also be noted that unless otherwise clearly specified and limited, the terms "set", "installed", "connected", "coupled" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present utility model can be understood according to specific situations.
[0030] The following will introduce in detail the specific structure of a silicon carbide crystal etching device provided by an embodiment of the present utility model in conjunction with the patent drawings and the corresponding technical effects brought thereby.
[0031] Please refer to Figure 1 , a silicon carbide crystal etching device 1 provided by an embodiment of the present utility model includes a first furnace body 100, a second furnace body 200, and a furnace cover 300.
[0032] The second furnace body 200 is disposed inside the first furnace body 100 and there is a gap between the outer peripheral wall of the second furnace body 200 and the inner peripheral wall of the first furnace body 100. The second furnace body 200 is used to accommodate the etching raw material. That is to say, the second furnace body 200 is a crucible for accommodating potassium hydroxide.
[0033] The furnace cover 300 is arranged on the first furnace body 100. The furnace cover 300 has opposite first surface 310 and second surface 320. The second surface 320 is closer to the second furnace body 200 relative to the first surface 310. The height dimension of the second surface 320 gradually increases in the direction away from the outer peripheral wall of the first furnace body 100. The second surface 320 is used to guide the liquid on itself to move towards the inner peripheral wall of the first furnace body 100. That is to say, the liquid on the second surface 320 can flow towards the edge of itself.
[0034] That is to say, when condensation appears on the second surface 320 of the furnace cover 300, the condensed liquid can move towards the inner peripheral wall of the first furnace body 100 under the action of the second surface 320. When the condensed liquid moves towards the inner peripheral wall of the first furnace body 100 under the action of the second surface 320, it can make the condensed liquid fall to both sides of the second furnace body 200, and can reduce the situation that the condensed liquid falls into the second furnace body 200, thereby reducing the occurrence of potential safety hazards.
[0035] Optionally, the height dimension of the second surface 320 gradually increases in the direction away from the outer peripheral wall of the first furnace body 100 and towards its own center. That is to say, the height dimension of the middle part of the second surface 320 is the largest. From the middle part of the second surface 320 towards the inner peripheral wall of the first furnace body 100, the height dimension of the second surface 320 gradually decreases. That is, in the direction from the middle part of the second surface 320 towards the inner peripheral wall of the first furnace body 100, the distance between the second surface 320 and the bottom surface of the first furnace body 100 gradually decreases. The liquid in the middle part of the second surface 320 can disperse around and flow towards the inner peripheral wall of the first furnace body 100, guiding the liquid on the second surface 320 to flow towards the edge of the furnace cover 300, avoiding the liquid directly dripping into the second furnace body 200. It can be understood that as long as the condensed liquid on the second surface 320 can approach the inner peripheral wall of the first furnace body 100 under the guidance of the second surface 320.
[0036] Specifically, the middle part of the furnace cover 300 has a ventilation hole 340. The height dimension of the second surface 320 gradually increases in the direction away from the outer peripheral wall of the first furnace body 100 and towards the ventilation hole 340. In other words, the distance between the ventilation hole 340 on the second surface 320 and the bottom wall of the first furnace body 100 gradually decreases in the direction towards the inner peripheral wall of the first furnace body 100. The ventilation hole 340 can realize the pressure relief function inside the first furnace body 100.
[0037] In some optional embodiments, the second surface 320 is an arc surface. The arc surface can avoid the phenomenon of stress concentration on the second surface 320, and can not only guide the liquid on the second surface 320, but also improve the service life of the furnace cover 300.
[0038] Optionally, the above arc surface can be a spherical surface or a conical surface.
[0039] Of course, in some other embodiments, the second surface 320 includes a plurality of diversion inclined surfaces. The intersection of the plurality of diversion inclined surfaces passes through the middle of the second surface 320. The height dimension of the diversion inclined surface gradually increases in the direction away from the first furnace body 100. Similarly, the distance between the diversion inclined surface and the bottom wall of the first furnace body 100 gradually decreases in the direction from the middle to the inner peripheral wall of the first furnace body 100. It can be understood that under the action of the plurality of diversion inclined surfaces, the liquid condensed on the second surface 320 can be dispersed, reducing the possibility of the liquid falling into the second furnace body 200.
[0040] Specifically, in this embodiment, the first furnace body 100 and the second furnace body 200 are coaxially arranged. Since the first furnace body 100 and the second furnace body 200 are coaxially arranged, it is ensured that the distances between the outer peripheral walls of the second furnace body 200 and the inner peripheral wall of the first furnace body 100 are the same everywhere, thereby ensuring that the paths for the liquid condensed on the second surface 320 to move to the edge of the furnace cover 300 are substantially equal.
[0041] Please refer to Figure 2 , in some alternative embodiments, the second surface 320 is further provided with diversion ribs 330. The diversion ribs 330 are used to drain the liquid on the second surface 320 towards the inner peripheral wall of the first furnace body 100, that is to say, the diversion ribs 330 are used to drain the liquid on the second surface 320 towards its own edge.
[0042] Optionally, the number of the diversion members is multiple. The diversion rib 330 has opposite first and second ends. The first end points to the middle of the second surface 320, and the second end points to the inner peripheral wall of the first furnace body 100. The second end is located between the outer peripheral wall of the second furnace body 200 and the inner peripheral wall of the first furnace body 100. Through the multiple diversion members, the liquid on the second surface 320 can be drained efficiently.
[0043] Specifically, in the direction from the first end to the second end, the distance between the diversion rib 330 and the bottom wall of the first furnace body 100 gradually decreases, that is to say, in the direction from the first end to the second end, the axial dimension of the diversion member gradually increases, thereby facilitating better drainage of the liquid on the second surface 320 towards the edge of the furnace cover 300.
[0044] Optionally, the second surface 320 is further provided with a water-absorbing member. The water-absorbing member is located between the inner peripheral wall of the first furnace body 100 and the outer peripheral wall of the second furnace body 200, and the water-absorbing member is located on the side of the diversion rib 330 close to the inner peripheral wall of the first furnace body 100. By arranging the water-absorbing member on the side of the diversion rib 330 close to the inner peripheral wall of the first furnace body 100, due to the water-absorbing property of the water-absorbing member, it is convenient for the liquid on the second surface 320 to move towards the inner peripheral wall of the first furnace body 100, reducing the situation where the condensed liquid falls into the second furnace body 200, thereby reducing the occurrence of potential safety hazards.
[0045] In summary, the embodiment of the present utility model provides a silicon carbide crystal etching device 1, which includes a first furnace body 100, a second furnace body 200 and a furnace cover 300. The second furnace body 200 is disposed inside the first furnace body 100, and there is a gap between the outer peripheral wall of the second furnace body 200 and the inner peripheral wall of the first furnace body 100. The second furnace body 200 is used to accommodate etching raw materials. The furnace cover 300 is covered on the first furnace body 100. The furnace cover 300 has opposite first surface 310 and second surface 320. The second surface 320 is closer to the second furnace body 200 relative to the first surface 310. The height dimension of the second surface 320 gradually increases in the direction away from the outer peripheral wall of the first furnace body 100. The second surface 320 is used to guide the liquid on itself to move closer to the inner peripheral wall of the first furnace body 100. When the condensed liquid moves towards the inner peripheral wall of the first furnace body 100 under the action of the second surface 320, the condensed liquid can fall to both sides of the second furnace body 200, which can reduce the situation where the condensed liquid falls into the second furnace body 200, thereby reducing the occurrence of potential safety hazards.
[0046] The foregoing is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. For those skilled in the art, various modifications and changes can be made to the present utility model. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present utility model shall be included within the protection scope of the present utility model.
Claims
1. A silicon carbide crystal etching device, characterized in that: include: A first furnace body (100); a second furnace body (200), the second furnace body (200) being arranged in the first furnace body (100) and having a distance between an outer peripheral wall of the second furnace body (200) and an inner peripheral wall of the first furnace body (100), and the second furnace body (200) being used for accommodating a corrosive raw material; A furnace cover (300), wherein the furnace cover (300) is arranged on the first furnace body (100), and the furnace cover (300) has a first surface (310) and a second surface (320) which are opposite to each other, wherein the second surface (320) is closer to the second furnace body (200) relative to the first surface (310), and the height dimension of the second surface (320) gradually increases in a direction away from the outer peripheral wall of the first furnace body (100), and the second surface (320) is used to guide liquid on the second surface to move toward the inner peripheral wall close to the first furnace body (100).
2. A silicon carbide crystal etching device according to claim 1, characterized in that: The height dimension of the second surface (320) gradually increases in a direction away from the outer peripheral wall of the first furnace body (100) and approaching the center thereof.
3. The silicon carbide crystal etching device according to claim 1, characterized in that: The furnace cover (300) has a vent hole (340) in the middle, and the height dimension of the second surface (320) gradually increases in a direction away from the outer peripheral wall of the first furnace body (100) and close to the vent hole (340).
4. The silicon carbide crystal etching device according to claim 1, characterized in that: The second surface (320) is a curved surface.
5. The silicon carbide crystal etching device according to claim 1, characterized in that: The second surface (320) comprises a plurality of guiding slopes, the intersection of the plurality of guiding slopes passes through the middle of the second surface (320), and the height dimension of the guiding slopes gradually increases in a direction away from the first furnace body (100).
6. The silicon carbide crystal etching device according to claim 1, characterized in that: The first furnace body (100) and the second furnace body (200) are coaxially arranged.
7. The silicon carbide crystal etching device according to claim 1, characterized in that: The second surface (320) is also provided with guide ribs (330), and the guide ribs (330) are used to guide the liquid on the second surface (320) toward the inner peripheral wall close to the first furnace body (100).
8. The silicon carbide crystal etching device according to claim 7, characterized in that: The number of the guide ribs (330) is plural, and the guide ribs (330) have a first end and a second end opposite to each other, the first end points to the middle of the second surface (320), the second end points to the inner peripheral wall of the first furnace body (100), and the second end is located between the outer peripheral wall of the second furnace body (200) and the inner peripheral wall of the first furnace body (100).
9. A silicon carbide crystal etching device according to claim 8, characterized in that: In the direction from the first end to the second end, the distance between the guide rib (330) and the bottom wall of the first furnace body (100) gradually decreases.
10. The silicon carbide crystal etching device according to claim 7, characterized in that: The second surface (320) is also provided with a water absorbing member, the water absorbing member is located between the inner peripheral wall of the first furnace body (100) and the outer peripheral wall of the second furnace body (200), and the water absorbing member is located on a side of the guide rib (330) close to the inner peripheral wall of the first furnace body (100).