Novel silicon carbide single crystal furnace
By designing a motor-driven rotary shaft and crucible net in a silicon carbide single crystal furnace, the flip and uniform heating of silicon carbide are achieved, the problem of uneven heat in existing furnaces is solved, the reaction efficiency is improved, and the collection process of silicon carbide is simplified.
Patent Information
- Application Number
- CN202422229998.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-11
- Publication Date
- 2025-06-17
- Estimated Expiration
- 2034-09-11
AI Technical Summary
The existing silicon carbide single crystal furnace is not convenient for turning the silicon carbide, resulting in uneven heat treatment and requires a lot of time to react, reducing the reaction efficiency.
A new type of silicon carbide single crystal furnace is designed, including the furnace body, base, collection area and crucible net. The rotating shaft and crucible net are driven by the motor to achieve the flip and uniform heating of silicon carbide.
The uniform heating of silicon carbide is achieved, the reaction time is shortened, the reaction efficiency is improved, and the design of the block and spring is facilitated to remove the collection box and collect the silicon carbide.
Smart Images
Figure CN222990283U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the technical field of single crystal furnaces, and particularly relates to a novel silicon carbide single crystal furnace. Background Technique
[0002] A single crystal furnace is a device that melts polycrystalline materials such as polysilicon through a graphite heater in an inert gas environment and uses the Czochralski method to grow dislocation-free single crystals.
[0003] The main function of a single crystal furnace is to melt materials such as polysilicon under the protection of an inert gas (such as nitrogen, helium), and grow dislocation-free single crystals by the Czochralski method. This device has a wide range of applications in the fields of semiconductors, photovoltaics, optics, etc. The single crystal furnace consists of multiple key parts, such as a pulling head, a secondary chamber, a furnace lid, a furnace barrel, a base frame, a crucible lower transmission device, a water separator, and an argon gas pipeline layout. These parts work together to ensure the stability and efficiency of the single crystal growth process.
[0004] Currently, there are still some defects in the existing silicon carbide single crystal furnaces. It is often inconvenient to turn over the silicon carbide, resulting in uneven heating, requiring a large amount of time for the reaction, and reducing the reaction efficiency. Therefore, we propose a novel silicon carbide single crystal furnace. Content of the Utility Model
[0005] The purpose of the utility model is to provide a novel silicon carbide single crystal furnace to solve the problems of inconvenient turning over of silicon carbide, resulting in uneven heating, requiring a large amount of time for the reaction, and reducing the reaction efficiency as mentioned in the above background technique.
[0006] To achieve the above purpose, the utility model provides the following technical solution: A novel silicon carbide single crystal furnace, including a furnace body and a base, a collection area is fixedly connected to the bottom of the furnace body, the bottom of the collection area is fixedly connected to the top of the base, a rotating shaft is arranged inside the furnace body, the number of the rotating shafts is two, the rotating shafts are rotatably connected inside the furnace body, a crucible net is fixedly connected to the top of the rotating shafts, and a motor is arranged at one end of the rotating shaft, and the motor is located outside the furnace body.
[0007] Preferably, a collection box is arranged inside the collection area, the collection box is movably connected inside the collection area, a clamping plate is fixedly connected to the front of the collection box, and a handle is fixedly connected to the front of the clamping plate.
[0008] Preferably, first card slots are arranged on both sides of the front of the collection area, a first card block is fixedly connected to the rear of the clamping plate, the first card block is adapted to the first card slots, and the first card block is clamped inside the first card slots.
[0009] Preferably, second card slots are provided on both sides of the collection area. The second card slots extend into the first card slots. One end of the first card block is movably connected to a second card block. The second card block is adapted to the second card slots, and the second card block is clamped inside the second card slots.
[0010] Preferably, a groove is provided at one end of the first card block. A spring is provided inside the groove. One end of the spring is fixedly connected inside the groove, and the other end of the spring is fixedly connected to one side of the second card block.
[0011] Preferably, anti-slip blocks are fixedly connected to the bottom of the base. The number of the anti-slip blocks is several.
[0012] Compared with the prior art, the beneficial effects of the present utility model are as follows:
[0013] 1. Place the single crystal silicon carbide material on the upper crucible net for heating. After heating for a period of time, start the upper motor. Drive the upper rotating shaft and the crucible net to rotate through the upper motor, so as to turn over the silicon carbide above and pour it onto the lower crucible net, realizing the turning-over work of the material. Then start the lower motor. Drive the lower rotating shaft and the crucible net to rotate through the lower motor, so as to turn over the silicon carbide below and pour it into the collection area. When heating, the single crystal silicon carbide material on the crucible net is heated more evenly, and a large amount of time is not required for the reaction, improving the reaction efficiency.
[0014] 2. By pressing the second card block, the spring expands and contracts, and the second card block enters into the second card slot, splitting the first card block from the first card slot, and the collection box can be taken out from the collection area, which brings convenience to the collection work of the processed silicon carbide. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] Figure 1 is the overall structural schematic diagram of the present utility model;
[0016] Figure 2 is the internal structural schematic diagram of the furnace body of the present utility model;
[0017] Figure 3 is the split structural schematic diagram of the collection box and the collection area of the present utility model;
[0018] Figure 4 is the split structural schematic diagram of the second card block and the groove of the present utility model.
[0019] In the figure: 1. Furnace body; 2. Base; 3. Collection area; 4. Rotating shaft; 5. Crucible net; 6. Motor; 7. Collection box; 8. Clamping plate; 9. Handle; 10. First card slot; 11. First card block; 12. Second card slot; 13. Second card block; 14. Groove; 15. Spring; 16. Anti-slip block. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0020] The following will clearly and completely describe the technical solutions in the embodiments of the present utility model in conjunction with the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are only a part of the embodiments of the present utility model, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present utility model without creative efforts shall fall within the protection scope of the present utility model.
[0021] Please refer to Figures 1-4 , the present utility model provides a technical solution for a new type of silicon carbide single crystal furnace: including a furnace body 1 and a base 2. The bottom of the furnace body 1 is fixedly connected with a collection area 3, and the bottom of the collection area 3 is fixedly connected to the top of the base 2. A rotating shaft 4 is provided inside the furnace body 1. The number of the rotating shafts 4 is two, and the rotating shafts 4 are rotatably connected inside the furnace body 1. The top of the rotating shaft 4 is fixedly connected with a crucible net 5, and one end of the rotating shaft 4 is provided with a motor 6, and the motor 6 is located outside the furnace body 1.
[0022] Specifically, a collection box 7 is provided inside the collection area 3. The collection box 7 is movably connected inside the collection area 3. A clamping plate 8 is fixedly connected to the front of the collection box 7, and a handle 9 is fixedly connected to the front of the clamping plate 8.
[0023] Specifically, two first card slots 10 are provided on both sides of the front of the collection area 3. A first card block 11 is fixedly connected to the rear of the clamping plate 8. The first card block 11 is adapted to the first card slot 10, and the first card block 11 is clamped inside the first card slot 10.
[0024] Specifically, second card slots 12 are provided on both sides of the collection area 3. The second card slots 12 extend into the first card slots 10. One end of the first card block 11 is movably connected with a second card block 13. The second card block 13 is adapted to the second card slot 12, and the second card block 13 is clamped inside the second card slot 12.
[0025] Specifically, a groove 14 is provided at one end of the first card block 11, and a spring 15 is provided inside the groove 14. One end of the spring 15 is fixedly connected inside the groove 14, and the other end of the spring 15 is fixedly connected to one side of the second card block 13.
[0026] Specifically, a plurality of anti-slip blocks 16 are fixedly connected to the bottom of the base 2.
[0027] In this embodiment, when the single crystal furnace is in use, first open the cover on the top of the furnace body 1, then place the silicon carbide single crystal material to be heated on the upper crucible net 5 above, then power on the heater to heat the silicon carbide single crystal material. After heating for a period of time, start the upper motor 6. Drive the upper rotating shaft 4 and the crucible net 5 to rotate through the upper motor 6, so as to turn the silicon carbide above and pour it onto the lower crucible net 5, realizing the turning work of the material. After that, start the lower motor 6, drive the lower rotating shaft 4 and the crucible net 5 to rotate through the lower motor 6, so as to turn the silicon carbide below and pour it into the collection area 3 inside. When heating, the silicon carbide single crystal material on the crucible net 5 is heated more evenly, and there is no need for a long time to react, improving the reaction efficiency.
[0028] By pressing the second block 13, the spring 15 expands and contracts, and the second block 13 enters into the second slot 12, separating the first block 11 from the first slot 10, then the collection box 7 can be taken out from the collection area 3, which brings convenience to the collection work of the processed silicon carbide.
[0029] It should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not expressly listed, or also includes elements inherent to such process, method, article or device. Without further limitation. The element defined by the statement "including a..." does not exclude the existence of additional identical elements in the process, method, article or device including the said element.
[0030] Although the embodiments of the present invention have been shown and described, for those of ordinary skill in the art, it can be understood that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principle and spirit of the present invention. The scope of the present invention is defined by the appended claims and their equivalents.
Claims
1. A novel silicon carbide single crystal furnace, comprising a furnace body (1) and a base (2), characterized in that: The bottom of the furnace body (1) is fixedly connected to a collecting area (3), the bottom of the collecting area (3) is fixedly connected to the top of the base (2), a rotating shaft (4) is provided inside the furnace body (1), the number of the rotating shafts (4) is two, the rotating shafts (4) are rotatably connected inside the furnace body (1), the top of the rotating shaft (4) is fixedly connected to a crucible net (5), one end of the rotating shaft (4) is provided with a motor (6), and the motor (6) is located outside the furnace body (1).
2. A novel silicon carbide single crystal furnace according to claim 1, characterized in that: A collection box (7) is provided inside the collection area (3), and the collection box (7) is movably connected inside the collection area (3). A clamping plate (8) is fixedly connected to the front of the collection box (7), and a handle (9) is fixedly connected to the front of the clamping plate (8).
3. A novel silicon carbide single crystal furnace according to claim 2, characterized in that: A number one card slot (10) is provided on both sides of the front of the collection area (3); a number one card block (11) is fixedly connected to the rear of the card connection plate (8); the number one card block (11) is adapted to the number one card slot (10), and the number one card block (11) is carded inside the number one card slot (10).
4. The novel silicon carbide single crystal furnace according to claim 3 is characterized in that: The collecting area (3) is provided with second card slots (12) on both sides, the second card slots (12) extend into the interior of the first card slot (10), one end of the first card block (11) is movably connected to the second card block (13), the second card block (13) is adapted to the second card slot (12), and the second card block (13) is snap-connected into the interior of the second card slot (12).
5. The novel silicon carbide single crystal furnace according to claim 4, characterized in that: A groove (14) is provided at one end of the first clamping block (11), a spring (15) is provided inside the groove (14), one end of the spring (15) is fixedly connected inside the groove (14), and the other end of the spring (15) is fixedly connected to one side of the second clamping block (13).
6. The novel silicon carbide single crystal furnace according to claim 1, characterized in that: An anti-sliding block (16) is fixedly connected to the bottom of the base (2), and the number of the anti-sliding blocks (16) is several.