System for performing visual inspection on side wall of semiconductor device
By designing a system of multiple light sources and light direction control components, and using an image acquisition device to acquire two vertical sidewall images of semiconductor devices, the problems of low detection efficiency and high cost in the prior art are solved, and efficient and economical sidewall visual detection is achieved.
Patent Information
- Application Number
- CN202421227070.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-31
- Publication Date
- 2025-06-17
- Estimated Expiration
- 2034-05-31
AI Technical Summary
The prior art is difficult to efficiently detect multiple side walls of semiconductor devices, resulting in low detection efficiency and high cost.
A system is designed to obtain clear and focused images of two vertical side walls of semiconductor devices through an image acquisition device using multiple light sources and light direction manipulation components.
It is realized that only one image acquisition device can simultaneously detect two vertical side walls of semiconductor devices, reducing costs and space requirements, while improving detection efficiency.
Smart Images
Figure CN222994352U_ABST
Abstract
Description
Technical Field
[0001] The utility model provides a system for visually inspecting the side walls of a semiconductor device, particularly for inspecting two substantially perpendicular side walls of the semiconductor device; the system includes a plurality of light sources and a plurality of light direction control components; and only one image acquisition device is required to acquire a clear, focused image that simultaneously includes the two side walls. Background Art
[0002] Semiconductor devices such as semiconductor chips need to be inspected for any defects such as cracks, microcracks, debris, burn marks, etc. Automatic visual inspection using a camera is predictable, efficient, and accurate compared to manual visual inspection performed by humans. Visual inspection can be performed on the surface of the semiconductor device and / or an area inside the semiconductor device to maximize the detection of the types of defects on the semiconductor device.
[0003] In the past, given that semiconductor devices typically consist of six sides (top surface, bottom surface, and four side walls), visual inspection was performed by using multiple image acquisition devices to capture the sides, or the semiconductor device needed to be rotated so that each surface was scanned by the image acquisition device. Since time was wasted rotating the semiconductor device for each surface scan, unnecessary inefficiency resulted, and if multiple image acquisition devices were required to perform visual inspection on all sides of the semiconductor device, it would incur higher costs.
[0004] Japanese Patent JPH0772092A (FURUKAWA JUN et al.) discloses a method for reliably and accurately detecting crystal defects adjacent to the crystal surface, which improves the position detection accuracy in the depth direction of crystal defects adjacent to the crystal surface, which is most important in manufacturing devices such as VLSIs. However, the prior art cannot solve the problem of visually inspecting multiple side walls of the crystal.
[0005] Therefore, it is advantageous to reduce these drawbacks by providing a system for visual inspection on the side walls of a semiconductor device, which can acquire a clear and focused image with only one image acquisition device, and the image consists of two perpendicular side walls of the semiconductor device. Summary of the Utility Model
[0006] Based on this, the main object of the present utility model is to provide a system for visually inspecting the side walls of a semiconductor device, which only requires a single visual inspection base station / module and can simultaneously view and inspect two perpendicular side walls of the semiconductor device without transferring or rotating the semiconductor device.
[0007] Another object of the present utility model is to provide a system for visually inspecting the sidewalls of a semiconductor device, which reduces costs because only one image acquisition device is required to inspect two perpendicular sidewalls of the semiconductor device.
[0008] Another object of the present invention is to provide a system for visually inspecting the sidewalls of a semiconductor device, which saves space that can be used for other applications.
[0009] Other objects of the present utility model will become clear by understanding the following detailed description of the present utility model or by using the present utility model in practice.
[0010] According to a preferred embodiment of the present utility model, the following is provided:
[0011] A system for visually inspecting the sidewalls of a semiconductor device, comprising:
[0012] At least one data processing component;
[0013] An image acquisition device;
[0014] At least one first light source;
[0015] At least one second light source;
[0016] At least one third light source;
[0017] At least one fourth light source;
[0018] Characterized in that the first light source is configured to emit at least one beam of first infrared light, the first infrared light contacts the first sidewall of the semiconductor device and penetrates the semiconductor device before contacting the third sidewall of the semiconductor device, wherein the third sidewall is the opposite side of the first sidewall;
[0019] The second light source is configured to emit at least one beam of second infrared light, the second infrared light contacts the second sidewall of the semiconductor device and penetrates the semiconductor device before contacting the fourth sidewall of the semiconductor device, wherein the fourth sidewall is the opposite side of the second sidewall;
[0020] Wherein the second sidewall is substantially perpendicular to the first sidewall, and the fourth sidewall is substantially perpendicular to the third sidewall;
[0021] The third light source is configured to emit at least one beam of first visible light through at least one first light direction control component, and the first visible light contacts the third sidewall of the semiconductor device;
[0022] The fourth light source is configured to emit at least one beam of second visible light through at least one second light ray direction control component, and the second visible light contacts the fourth sidewall of the semiconductor device;
[0023] The system further includes at least one third group of light ray direction control components, which are configured to guide the first infrared light and the first visible light from the third sidewall of the semiconductor device to the image acquisition device;
[0024] The system further includes at least one fourth group of light ray direction control components, which are configured to guide the second infrared light and the second visible light from the fourth sidewall of the semiconductor device to the image acquisition device;
[0025] Wherein the image acquisition device is configured to acquire at least one image, and the image includes a first sub-image of the third sidewall and a second sub-image of the fourth sidewall in one image. Description of the Drawings
[0026] Other aspects and advantages of the present utility model will be discerned after studying the specific embodiments in conjunction with the drawings, wherein:
[0027] Figure 1 is a perspective view of the system of the present utility model;
[0028] Figure 2 is a close-up perspective view of the system of the present utility model;
[0029] Figure 3 shows an image acquired by the image acquisition device;
[0030] Figure 4 is a flowchart of the method of the present utility model;
[0031] Figure 5 is a perspective view of the third group of light ray direction control components and the fourth group of light ray direction control components. Detailed Description of the Embodiments
[0032] Many specific details are set forth in the following detailed description in order to provide a thorough understanding of the present utility model. However, those of ordinary skill in the art will understand that the present utility model may be practiced without these specific details. In other instances, well-known methods, steps, and / or components have not been described in detail so as not to obscure the present utility model.
[0033] The present utility model can be more clearly understood from the following description of its embodiments, which are given by way of example only and with reference to the drawings, which are not drawn to scale.
[0034] As Figure 1As shown, the present utility model provides a system 101 for visually inspecting the sidewalls of semiconductor devices. The system includes at least one data processing component, an image acquisition device 103, at least one first light source 105A, at least one second light source 105B, at least one third light source 107A, and at least one fourth light source 107B.
[0035] As Figure 2 shown, the first light source 105A is configured to emit at least one beam of first infrared light 106A, and the first infrared light 106A contacts the first sidewall 109A of the semiconductor device 111 and penetrates the semiconductor device 111 before contacting the third sidewall 109C of the semiconductor device 111, where the third sidewall 109C is the opposite side of the first sidewall 109A. The first infrared light 106A may be near-infrared light or short-wave infrared light.
[0036] The second light source 105B is configured to emit at least one beam of second infrared light 106B, and the second infrared light 106B contacts the second sidewall 109B of the semiconductor device 111 and penetrates the semiconductor device 111 before contacting the fourth sidewall 109D of the semiconductor device 111, where the fourth sidewall 109D is the opposite side of the second sidewall 109B. The second sidewall 109B is substantially perpendicular to the first sidewall 109A, and the fourth sidewall 109D is substantially perpendicular to the third sidewall 109C. The second infrared light 106B may be near-infrared light or short-wave infrared light.
[0037] The third light source 107A is configured to emit at least one beam of first visible light 113A through at least one first light direction control component 115A, and the first visible light 113A contacts the third sidewall 109C of the semiconductor device 111. The first light direction control component 115A may be a beam splitter.
[0038] The fourth light source 107B is configured to emit at least one beam of second visible light 113B through at least one second light direction control component 115B, and the second visible light 113B contacts the fourth sidewall 109D of the semiconductor device 111. The second light direction control component 115B may be a beam splitter.
[0039] The system 101 further includes at least one third set of light direction control components 117, which are configured to guide the first infrared light 106A and the first visible light 113A from the third sidewall 109C of the semiconductor device 111 to the image acquisition device 103. The third set of light direction control components 117 may be a beam splitter, a mirror, a prism, or a combination thereof.
[0040] System 101 further includes at least one fourth set of light direction control components 119, which are configured to guide the second infrared light 106B and the second visible light 113B from the fourth sidewall 109D of the semiconductor device 111 to the image acquisition device 103. The fourth set of light direction control components 119 may be a beam splitter, a mirror, a prism, or a combination thereof. Figure 5 An example of the third set of light direction control components 117 is shown, which includes a first prism 503 that guides the reflected first infrared light 106A and the reflected first visible light 113A from the third sidewall 109C of the semiconductor device 111 to the image acquisition device 103 at a perpendicular angle. At the same time, the fourth set of light direction control components 119 includes a second prism 505 that guides the reflected second infrared light 106B and the reflected second visible light 113B from the fourth sidewall 109D of the semiconductor device 111 to a third prism 507 at a perpendicular angle, and the third prism 507 reflects the second infrared light 106B and the second visible light 113B at another perpendicular angle towards the image acquisition device 103. The third set of light direction control components 117 or the fourth set of light direction control components 119 may also be other configurations that enable the reflected light to reach the image acquisition device 103.
[0041] The image acquisition device 103 is configured to acquire at least one image 121, which includes a first sub-image 121A of the third sidewall 109C and a second sub-image 121B of the fourth sidewall 109D in one image, as Figure 3 shown. An example of the image acquisition device 103 applicable to the present invention is a complementary metal oxide semiconductor (CMOS) sensor or a CMOS camera.
[0042] The image acquisition device 103 is mounted on at least one first actuator 123 configured to move the image acquisition device 103; wherein the image acquisition device 103 is configured to measure the distance between the third sidewall 109C and the lens of the image acquisition device, and the data processing component is configured to move the first actuator 123 to ensure that the image 121 acquired by the image acquisition device 103 is within the depth of field of the lens to obtain a clear image 121.
[0043] At least one light direction control component in the third group of light direction control components 117 is mounted on at least one second actuator 125, and the second actuator is configured to move at least one light direction control component in the third group of light direction control components 117; wherein the image acquisition device 103 is configured to measure the distance between the third side wall 109C and the lens of the image acquisition device, and the data processing component is configured to move the second actuator 125 to ensure that the image 121 acquired by the image acquisition device 103 is within the depth of field of the lens to obtain a clear image 121.
[0044] At least one light direction control component in the fourth group of light direction control components 119 is mounted on at least one third actuator 127, and the third actuator is configured to move at least one light direction control component in the fourth group of light direction control components 119; wherein the image acquisition device 103 is configured to measure the distance between the third side wall 109C and the lens of the image acquisition device, and the data processing component is configured to move the third actuator 127 to ensure that the image 121 acquired by the image acquisition device 103 is within the depth of field of the lens to obtain a clear image 121.
[0045] The third group of light direction control components 117, the fourth group of light direction control components 119, and the image acquisition device 103 are configured to make the image 121 acquired by the image acquisition device 103 be in a compact field of view (FOV). The third group of light direction control components 117 and the fourth group of light direction control components 119 are configured such that the optical path between the third side wall 109C or the fourth side wall 109D and the lens of the image acquisition device 103 makes full use of the field of view of the image acquisition device 103.
[0046] As Figure 4 shown, the present utility model also provides a method for visually inspecting the side walls of a semiconductor device, including the following steps. Step 1, at least two first light beams 106A, 113A are emitted and the first light beams 106A, 113A fall on the third side wall 109C of at least one semiconductor device 111; at least two second light beams 106B, 113B are emitted and the second light beams 106B, 113B fall on the fourth side wall 109D of at least one semiconductor device 111.
[0047] The first light beam includes at least one first infrared light beam 106A and at least one first visible light beam 113A. The first infrared light beam 106A is emitted by at least one first light source 105A. Wherein, the first infrared light beam 106A contacts a first sidewall 109A of at least one semiconductor device 111, penetrates the semiconductor device 111, and then contacts a third sidewall 109C of the semiconductor device 111, where the third sidewall 109C is on the opposite side of the first sidewall 109A. The first visible light beam 113A is emitted by at least one third light source 107A, and the first visible light beam 113A is made to fall on the third sidewall 109C of the semiconductor device 111 through at least one first light beam direction control component 115A.
[0048] Step 2: The two first light beams 106A and 113A are directed towards the image acquisition device 103 through at least one third set of light beam direction control components 117; the second light beams 106B and 113B are directed towards the image acquisition device 103 through at least one fourth set of light beam direction control components 119.
[0049] The second light beam includes at least one second infrared light beam 106B and at least one second visible light beam 113B. The second infrared light beam 106B is emitted by at least one second light source 105B. Wherein, the second infrared light beam 106B contacts a second sidewall 109B of at least one semiconductor device 111, penetrates the semiconductor device 111, and then contacts a fourth sidewall 109D of the semiconductor device 111, where the fourth sidewall 109D is on the opposite side of the second sidewall 109B. The second visible light beam 113B is emitted by at least one fourth light source 107B, and the second visible light beam 113B is made to fall on the fourth sidewall 109D of the semiconductor device 111 through at least one second light beam direction control component 115B.
[0050] Step 3: The image acquisition device 103 acquires at least one image 121, where the image 121 includes a first sub-image 121A of the third sidewall 109C and a second sub-image 121B of the fourth sidewall 109D.
[0051] By implementing the method of the system of the present utility model, only a single vision inspection base station / module can simultaneously view and inspect two vertical sidewalls of a semiconductor device without transferring or rotating the semiconductor device. To perform vision inspection on all four sides of the semiconductor device, two or more sets of the system of the present utility model are required. Generally, the semiconductor device is picked up by a pick-up head, and the vision inspection is performed by the system of the present utility model. However, when the semiconductor device is inspected by the system of the present utility model, its position or state can also be variable as long as the position or state does not block the optical paths of the light source and the pattern acquisition device of the system 101 of the present utility model.
[0052] Although the present utility model has been shown and described herein by its preferred embodiments, demonstrating the results and advantages obtained by the present utility model over the prior art, the present utility model is not limited to these specific embodiments. Therefore, the forms of the invention shown and described herein are only illustrative examples, and other embodiments can be selected without departing from the scope of the claims required by the present utility model.
Claims
1. A system (101) for visually inspecting a sidewall of a semiconductor device, comprising: at least one data processing component; Image acquisition device (103); at least one first light source (105A); at least one second light source (105B); at least one third light source (107A); at least one fourth light source (107B); The invention is characterized in that the first light source (105A) is configured to emit at least one first infrared light (106A), wherein the first infrared light (106A) contacts a first side wall (109A) of the semiconductor device (111) and penetrates the semiconductor device (111) before contacting a third side wall (109C) of the semiconductor device (111), wherein the third side wall (109C) is an opposite side of the first side wall (109A); The second light source (105B) is configured to emit at least one second infrared light (106B), the second infrared light (106B) contacts a second side wall (109B) of the semiconductor device (111) and penetrates the semiconductor device (111) before contacting a fourth side wall (109D) of the semiconductor device (111), wherein the fourth side wall (109D) is an opposite side of the second side wall (109B); wherein the second side wall (109B) is perpendicular to the first side wall (109A), and the fourth side wall (109D) is perpendicular to the third side wall (109C); The third light source (107A) is configured to emit at least one beam of first visible light (113A) through at least one first light direction control component (115A), and the first visible light (113A) contacts the third side wall (109C) of the semiconductor device (111); The fourth light source (107B) is configured to emit at least one beam of second visible light (113B) through at least one second light direction control component (115B), and the second visible light (113B) contacts the fourth side wall (109D) of the semiconductor device (111); The system (101) further comprises at least one third group of light direction manipulation components (117), which are configured to guide the first infrared light (106A) and the first visible light (113A) from a third side wall (109C) of the semiconductor device (111) to the image acquisition device (103); The system (101) further comprises at least one fourth group of light direction manipulation components (119), which are configured to guide the second infrared light (106B) and the second visible light (113B) from a fourth side wall (109D) of the semiconductor device (111) to the image acquisition device (103); The image acquisition device (103) is configured to acquire at least one image (121), the image (121) comprising a first sub-image (121A) of the third side wall (109C) and a second sub-image (121B) of the fourth side wall (109D) in one image.
2. The system (101) for visually inspecting the sidewall of a semiconductor device according to claim 1, characterized in that: The image acquisition device (103) is mounted on at least one first actuator (123) configured to move the image acquisition device (103); wherein the image acquisition device (103) is configured to measure the distance between the third side wall (109C) and the lens of the image acquisition device, and the data processing component is configured to move the first actuator (123) to ensure that the image (121) acquired by the image acquisition device (103) is within the depth of field of the lens to obtain a clear image (121).
3. The system (101) for visually inspecting the sidewall of a semiconductor device according to claim 1, characterized in that: At least one of the third group of light direction control components (117) is mounted on at least one second actuator (125), and the second actuator is configured to move at least one of the third group of light direction control components (117); wherein the image acquisition device (103) is configured to measure the distance between the third side wall (109C) and the lens of the image acquisition device, and the data processing component is configured to move the second actuator (125) to ensure that the image (121) acquired by the image acquisition device (103) is within the depth of field of the lens to obtain a clear image (121).
4. The system (101) for visually inspecting the sidewall of a semiconductor device according to claim 1, characterized in that: At least one of the fourth group of light direction control components (119) is mounted on at least one third actuator (127), and the third actuator is configured to move at least one of the fourth group of light direction control components (119); wherein the image acquisition device (103) is configured to measure the distance between the third side wall (109C) and the lens of the image acquisition device, and the data processing component is configured to move the third actuator (127) to ensure that the image (121) acquired by the image acquisition device (103) is within the depth of field of the lens to obtain a clear image (121).
5. The system (101) for visually inspecting the sidewall of a semiconductor device according to any one of claims 1 to 4, characterized in that: The first infrared light (106A) is near infrared light or short-wave infrared light, and the second infrared light (106B) is near infrared light or short-wave infrared light.
6. The system (101) for visually inspecting the sidewall of a semiconductor device according to any one of claims 1 to 4, characterized in that: The first light direction control component (115A) and the second light direction control component (115B) are beam splitters.
7. The system (101) for visually inspecting the sidewall of a semiconductor device according to any one of claims 1 to 4, characterized in that: The third group of light direction control components (117) and the fourth group of light direction control components (119) are beam splitters, reflectors, prisms or a combination thereof.
8. The system (101) for visually inspecting the sidewall of a semiconductor device according to any one of claims 1 to 4, characterized in that: The third group of light direction manipulation components (117), the fourth group of light direction manipulation components (119), and the image acquisition device (103) are configured so that the image (121) acquired by the image acquisition device (103) is in a compact field of view.