Die bonding tool

Abstract

The utility model provides and discloses a bare crystal bonding tool, which comprises a bonding head with a movable part. The movable member is movable between an extended position in which the lower surface of the movable member protrudes below the lower surface of the joint head and a retracted position in which the lower surface of the movable member does not protrude below the lower surface of the joint head. The movable member may be used to control the shape of the semiconductor die fixed to the lower surface of the bond head during a process of bonding the semiconductor die to the substrate. Therefore, void regions and other bonding defects can be avoided, and bonding formed between the semiconductor die and the target substrate can be improved.

Description

Technical Field

[0001] An embodiment of the present utility model relates to a die bonding tool. Background Art

[0002] Due to the continuous increase in the integration density of various electronic components (e.g., transistors, diodes, resistors, capacitors, etc.), the semiconductor industry has grown. To a large extent, these improvements in integration density have come from the continuous reduction of the minimum feature size, which allows more components to be integrated into a given area.

[0003] In addition to smaller electronic components, improvements in component packaging have also been developed in an effort to provide smaller packages that occupy less area than previous packages. Exemplary methods include quad flat pack (QFP), pin grid array (PGA), ball grid array (BGA), flip chips (FC), three-dimensional integrated circuits (3DICs), wafer level packages (WLPs), package on package (PoP), system-on-chip (SoC), or integrated system-on-chip devices. Some of these three-dimensional devices (e.g., three-dimensional integrated circuits, system-on-chip, integrated system-on-chip) are fabricated by placing wafers on wafers at the semiconductor wafer level. Due to the reduced length of the interconnections between the stacked wafers, these three-dimensional devices offer improved integration density as well as other advantages such as faster speed and higher bandwidth. However, there are many challenges associated with three-dimensional devices. Summary of the Utility Model

[0004] An embodiment of the present disclosure provides a die bonding tool, including a bonding head and an actuator system. The bonding head is configured to temporarily fix a semiconductor die to the lower surface of the bonding head. The bonding head includes a movable member that is at least partially located within an internal chamber of the bonding head. The movable member is movable relative to the internal chamber between a first position and a second position. The lower surface of the movable member protrudes below the lower surface of the bonding head at the first position. The lower surface of the movable member does not protrude below the lower surface of the bonding head at the second position. The actuator system is configured to move the bonding head and the semiconductor die temporarily fixed thereto toward the upper surface of a target substrate.

[0005] According to an embodiment of the present invention, the lower surface of the bonding head includes the lower surface of a nozzle plate having at least one port therein, and the die bonding tool further includes:

[0006] A vacuum source fluidly coupled to the at least one port in the nozzle plate and configured to selectively create a suction force at the at least one port in the nozzle plate to temporarily fix the semiconductor die against the lower surface of the nozzle plate.

[0007] According to an embodiment of the present invention, the internal chamber is located in a central region of the nozzle plate and includes an opening coplanar with the lower surface of the nozzle plate.

[0008] According to an embodiment of the present invention, a width dimension of the internal chamber is equal to or less than half of a width dimension of the lower surface of the nozzle plate.

[0009] According to an embodiment of the present invention, the lower surface of the movable member is configured to protrude at least 0.1 μm below a plane of the lower surface of the nozzle plate by a maximum protrusion distance.

[0010] According to an embodiment of the present invention, it further includes: a fluid source configured to selectively supply a fluid to the internal chamber of the bonding head to control a position of the movable member relative to the internal chamber.

[0011] According to an embodiment of the present invention, it further includes: at least one retaining member located around a perimeter of the internal chamber of the bonding head and defining a width of an opening leading to the internal chamber.

[0012] According to an embodiment of the present invention, a maximum width of the movable member is greater than the width of the opening leading to the internal chamber defined by the at least one retaining member.

[0013] According to an embodiment of the present invention, a lower portion of the movable member includes a curved, angled, or stepped outer surface such that the lower portion of the movable member can protrude from the internal chamber below a plane of the lower surface of the nozzle plate.

[0014] Embodiments of the present disclosure provide a die bonding tool including a bonding head and a system controller. The bonding head is configured to temporarily fix a semiconductor die against a surface of the bonding head. The bonding head includes a movable member movable relative to the surface of the bonding head. The system controller is operably coupled to the bonding head and configured to control the movement of the bonding head and the semiconductor die fixed thereto relative to a target substrate, and configured to control the position of the movable member relative to the surface of the bonding head.

[0015] At least one embodiment of the present utility model has the following advantages or technical effects:

[0016] In various embodiments, during the process of bonding a semiconductor integrated circuit die to a target substrate, a movable member can be maintained in an extended position, where the lower surface of the movable member protrudes below the lower surface of the bonding head to impart a concave shape to the semiconductor integrated circuit die. When the bonding head moves the semiconductor integrated circuit die to initial contact with the target substrate, the concave shape of the semiconductor integrated circuit die can be maintained. When the die bonding tool continues to place the semiconductor integrated circuit die onto the target substrate, the movable member can retract into an internal chamber to gradually "flatten out" the concave shape of the semiconductor integrated circuit die to increase the contact area between the semiconductor integrated circuit die and the target substrate. By controlling the shape of the semiconductor integrated circuit die during placement onto the target substrate, the occurrence of voids or bubbles can be mitigated, and the bonding wave between the semiconductor integrated circuit die and the target substrate can radially propagate outward from the central region of the semiconductor integrated circuit die and propagate to the periphery of the semiconductor integrated circuit die in a smooth and controlled manner. Accordingly, the occurrence of void regions and other bonding defects can be mitigated, and the quality and reliability of the bond formed between the semiconductor integrated circuit die and the target substrate can be improved. Description of the Drawings

[0017] The following detailed description is to be read in conjunction with the accompanying drawings, which are hereby incorporated in their entirety. It should be noted that, in accordance with the normal practice in the industry, the drawings are not necessarily drawn to scale. In fact, the dimensions of the elements may be arbitrarily enlarged or reduced for clarity of illustration.

[0018] Figure 1 is a longitudinal cross-sectional view of a die bonding tool in accordance with various embodiments of the present disclosure.

[0019] Figure 2A is a longitudinal cross-sectional view of a die bonding tool in accordance with an embodiment of the present disclosure, showing the bonding head of the die bonding tool aligned above the upper surface of a semiconductor integrated circuit (IC) die.

[0020] Figure 2B is a longitudinal cross-sectional view of a die bonding tool in accordance with an embodiment of the present disclosure, showing the bonding head contacting the upper surface of a semiconductor integrated circuit die.

[0021] Figure 2C is a longitudinal cross-sectional view of a die bonding tool in accordance with an embodiment of the present disclosure, showing a semiconductor integrated circuit die fixed to the bonding head.

[0022] Figure 2DA longitudinal cross-sectional view of a die bonding tool according to an embodiment of the present disclosure, showing a bonding head aligned above the upper surface of a target substrate and a semiconductor integrated circuit die attached thereto.

[0023] Figure 2E A longitudinal cross-sectional view of a die bonding tool according to an embodiment of the present disclosure, showing the bonding head and the semiconductor integrated circuit die attached thereto moving longitudinally downward toward the upper surface of the target substrate.

[0024] Figure 2F A bottom-up view of a semiconductor integrated circuit die according to an embodiment of the present disclosure, schematically showing a bonding wave generated during a process of bonding the lower surface of the semiconductor integrated circuit die to the upper surface of a target substrate.

[0025] Figure 2G A longitudinal cross-sectional view of a die bonding tool according to an embodiment of the present disclosure, showing the bonding head and the semiconductor integrated circuit die attached thereto moving further toward the upper surface of the target substrate.

[0026] Figure 2H A bottom-up view of a semiconductor integrated circuit die according to an embodiment of the present disclosure, schematically showing the propagation of the bonding wave during a subsequent stage of the bonding process.

[0027] Figure 2I A longitudinal cross-sectional view of a die bonding tool according to an embodiment of the present disclosure, showing the bonding head moving further toward the upper surface of the target substrate so that the entire lower surface of the semiconductor integrated circuit die contacts the upper surface of the target substrate.

[0028] Figure 2J A bottom-up view of a semiconductor integrated circuit die according to various embodiments of the present disclosure, schematically showing the propagation of the bonding wave during a subsequent stage of the bonding process.

[0029] Figure 2K A longitudinal cross-sectional view of a die bonding tool after a die bonding process of bonding a semiconductor integrated circuit die to a target substrate according to an embodiment of the present disclosure.

[0030] Figure 3A A longitudinal cross-sectional view of a die bonding tool including a movable member protruding below the lower surface of a nozzle plate of a bonding head according to another embodiment of the present disclosure.

[0031] Figure 3B is according to an embodiment of the present disclosure Figure 3A A longitudinal cross-sectional view of a die bonding tool, showing the movable member in a retracted position.

[0032] Figure 4It is a flowchart showing a method of bonding a semiconductor die to a target substrate according to an embodiment of the present disclosure.

[0033] The reference numerals are explained as follows:

[0034] 100: Die bonding tool

[0035] 101: Bonding head

[0036] 102: Nozzle plate

[0037] 103: Lower surface

[0038] 104: Heat source

[0039] 105: Internal chamber

[0040] 106: Holding member

[0041] 107: Movable part

[0042] 108: Opening / port

[0043] 109, 111: Fluid conduit

[0044] 110: Vacuum source

[0045] 112: Fluid source

[0046] 113: System controller

[0047] 114: Actuator system

[0048] 115: Opening

[0049] 116: Arrow / fluid

[0050] 201: Semiconductor integrated circuit die / Semiconductor die

[0051] 202: Upper surface

[0052] 203: Lower surface

[0053] 204: Bonding wave

[0054] 205: Substrate / Target substrate

[0055] 206: Upper surface / surface

[0056] 210: Support element

[0057] 211: Lower support member

[0058] 312: Motorized system

[0059] 401: Method

[0060] 402, 404, 406, 408: Steps

[0061] d1, d2: Width dimensions

[0062] d3: Maximum width dimension / maximum width

[0063] d4: Maximum protrusion distance / maximum distance

[0064] hd1: First horizontal direction

[0065] w: Width. Detailed implementation manners

[0066] The following disclosure provides many different embodiments or examples for implementing different features of the present case. The following disclosure describes specific examples of various components and their arrangements to simplify the description. Of course, these specific examples are not intended to limit. For example, if the present disclosure describes a first feature formed on or above a second feature, it means that it may include an embodiment in which the above-mentioned first feature and the above-mentioned second feature are in direct contact, and may also include an embodiment in which additional features are formed between the above-mentioned first feature and the above-mentioned second feature, so that the above-mentioned first feature and the second feature may not be in direct contact. Additionally, the following disclosure may reuse the same reference signs and / or markings in different examples. These repetitions are for the purpose of simplification and clarity, and are not intended to limit a specific relationship between the different embodiments and / or structures discussed.

[0067] In addition, there are spatial-related terms. For example, "below", "beneath", "lower", "above", "higher" and similar terms are used to facilitate the description of the relationship between an element or feature in the drawing and another element or feature. Except for the orientation shown in the drawings, these spatial-related terms are intended to include different orientations of the device during use or operation. The device may be turned to different orientations (rotated 90 degrees or other orientations), and the spatial-related terms used herein may be interpreted in the same way accordingly. Unless otherwise explicitly stated, each element having the same reference sign is assumed to have the same material composition and a thickness within the same thickness range.

[0068] In various embodiments, a die bonding tool can be used to bond a semiconductor integrated circuit (IC) die (which can also be referred to as a "wafer") to a target substrate, such as a semiconductor wafer. The die bonding tool can include a bonding head configured to temporarily adhere the semiconductor integrated circuit die to the bonding head, for example, via vacuum suction. The die bonding tool can align the semiconductor integrated circuit die above the bonding area of the target substrate and can apply a compressive force to the semiconductor integrated circuit die to bond the semiconductor integrated circuit die to the bonding area of the target substrate.

[0069] The bonding head of a die bonding tool can temporarily secure a semiconductor integrated circuit die to the lower surface of the bonding head using suction applied through one or more openings or ports in the lower surface of the bonding head. Once the semiconductor integrated circuit die is properly aligned and in contact above the bonding area of the target substrate, the suction on the semiconductor integrated circuit die can be released, thereby releasing the semiconductor integrated circuit die from the bonding head of the die bonding tool. In many cases, mechanical deformations in the semiconductor integrated circuit die (e.g., natural warping of the die) can cause trapped air pockets or bubbles between the lower surface of the semiconductor integrated circuit die and the upper surface of the target substrate during the bonding process. Thus, after the bonding process, there may be void regions between the interfacing surfaces of the semiconductor integrated circuit die and the target substrate, which can result in poor or defective bonding and reduced device yields.

[0070] To improve the bonding between a semiconductor integrated circuit die and a target substrate, various embodiments of the present disclosure relate to a die bonding tool that includes a bonding head having a movable member that can move within an internal chamber of the bonding head. The movable member can move between a first (i.e., extended) position and a second (i.e., retracted) position, in which the lower surface of the movable member protrudes below the lower surface of the bonding head in the first (i.e., extended) position and does not protrude below the lower surface of the bonding head in the second (i.e., retracted) position. In some embodiments, a fluid source coupled to the internal chamber of the bonding head can be used to hydraulically control the position of the movable member relative to the lower surface of the bonding head. In other embodiments, a mechanical drive system can control the position of the movable member relative to the lower surface of the bonding head.

[0071] In various embodiments, during the process of bonding a semiconductor integrated circuit die to a target substrate, a movable member may be maintained in an extended position where the lower surface of the movable member protrudes below the lower surface of the bonding head to impart a concave shape to the semiconductor integrated circuit die. When the bonding head moves the semiconductor integrated circuit die to an initial contact with the target substrate, the concave shape of the semiconductor integrated circuit die may be maintained. As the die bonding tool continues to place the semiconductor integrated circuit die onto the target substrate, the movable member may retract into an internal chamber to gradually "flatten out" the concave shape of the semiconductor integrated circuit die to increase the contact area between the semiconductor integrated circuit die and the target substrate. By controlling the shape of the semiconductor integrated circuit die during placement onto the target substrate, the formation of voids or bubbles may be mitigated, and the bonding wave between the semiconductor integrated circuit die and the target substrate may radially propagate outward from the central region of the semiconductor integrated circuit die in a smooth and controlled manner to the periphery of the semiconductor integrated circuit die. Accordingly, the occurrence of void regions and other bonding defects may be mitigated, and the quality and reliability of the bond formed between the semiconductor integrated circuit die and the target substrate may be improved.

[0072] Figure 1 is a longitudinal cross-sectional view of a die bonding tool 100 in accordance with various embodiments of the present disclosure. The die bonding tool 100 may include a bonding head 101 and an actuator system 114 configured to move the bonding head 101. The bonding head 101 may include a nozzle plate 102 having a substantially flat lower surface 103. The nozzle plate 102 of the bonding head 101 may further include one or more openings 108 (i.e., ports) in the lower surface 103 of the nozzle plate 102. A fluid conduit 109 may couple each port 108 of the nozzle plate 102 to a vacuum source 110. The vacuum source 110 may selectively apply a negative pressure within the fluid conduit 109 such that a vacuum or suction force may be generated at each port 108 in the nozzle plate 102. Accordingly, the ports 108 may also be referred to as vacuum ports 108. The suction force at the ports 108 may be sufficient to hold the semiconductor integrated circuit die against the lower surface 103 of the nozzle plate 102.

[0073] In some embodiments, the die bonding tool 100 may further include a heat source 104 that may be used to apply heat to the semiconductor integrated circuit die and the target substrate during the die bonding process. In Figure 1 embodiments, the heat source 104 may include one or more heating elements (e.g., resistive heating elements) located within the bonding head 101 that may be configured to heat the semiconductor integrated circuit die via heat conduction through the nozzle plate 102.

[0074] The die bonding tool 100 may include a system controller 113, which may be a central processing unit (CPU), operatively coupled to an actuator system 114. The system controller 113 may be configured to send control signals to the actuator system 114 to cause the actuator system 114 to move the bonding head 101. In various embodiments, the actuator system 114 may be configured to translate the bonding head 101 longitudinally and / or horizontally. In some embodiments, the system controller 113 may also control the operation of a vacuum source 110 to selectively provide a suction force at each vacuum port 108 in the nozzle plate 102. In some embodiments, the system controller 113 may also control the operation of a heat source 104 during the die bonding process to selectively apply heat to the semiconductor integrated circuit die and the target substrate.

[0075] Referring again to Figure 1 , the die bonding tool 100 may further include an internal chamber 105 and a movable member 107 at least partially located within the internal chamber 105. The internal chamber 105 may be open at one end of the internal chamber 105, where an opening 115 leading to the internal chamber 105 may be substantially coplanar with the lower surface 103 of the nozzle plate 102. The movable member 107 may move within the internal chamber 105 along a longitudinal direction (i.e., along a direction perpendicular to the lower surface 103 of the nozzle plate 102). At least one retaining member 106 may prevent the movable member 107 from moving completely out of the internal chamber 105. The at least one retaining member 106 may include, for example, a lip, a beveled surface, a flange, a gasket, or similar features, located around the perimeter of the internal chamber 105. The at least one retaining member 106 may define a width w of the opening 115 of the internal chamber 105. In various embodiments, the maximum width dimension d3 of the movable member 107 may be greater than the width w of the opening 115 leading to the internal chamber 105 defined by the at least one retaining member 106. Thus, the movable member 107 can be prevented from completely leaving the internal chamber 105.

[0076] Referring again to Figure 1, the lower surface 103 of the nozzle plate 102 may have a width dimension d1 along a first horizontal direction hd1. In some embodiments, the width dimension d1 of the lower surface 103 of the nozzle plate 102 may be at least approximately 2 cm, but it should be understood that nozzle plates 102 with lower surfaces 103 having width dimensions d1 greater than or less than 2 cm may also be used. The internal chamber 105 may be located in the central region of the nozzle plate 102. In some embodiments, the central axis of the internal chamber 105 may correspond to the geometric center of the nozzle plate 102. The internal chamber 105 may have a width dimension d2 along the first horizontal direction hd1, which is greater than the width w of the opening 115 of the internal chamber 105 defined by at least one retaining member 106, and the width dimension d2 is less than the width dimension d1 of the lower surface 103 of the nozzle plate 102. In some embodiments, the width dimension d2 may be less than or equal to half of the width dimension d1 (i.e., ≤ 1 / 2 of d1). The maximum width dimension d3 of the movable member 107 may be less than the width dimension d2 of the internal chamber 105. Thus, when the movable member 107 can be held within the internal chamber 105 by at least one retaining member 106, the movable member 107 can move freely up and down within the internal chamber 105. The nozzle plate 102, the internal chamber 105, and the movable member 107 may have any suitable horizontal cross-sectional shape, such as a polygonal shape (e.g., rectangular, triangular), circular, elliptical, or irregular shape.

[0077] In various embodiments, the movable member 107 may have a width dimension that tapers towards the lower surface of the movable member 107, such that a portion of the movable member 107 may extend through the opening 115 into the internal chamber 105 defined by at least one retaining member 106 and protrude below the plane of the lower surface 103 of the nozzle plate 102. In Figure 1 embodiments, the movable member 107 includes a circular outer surface whose width tapers towards the lower surface of the movable member 107. In other embodiments, the movable member 107 may have an angled or stepped outer surface whose width decreases towards the lower surface of the movable member. In various embodiments, the lower surface of the movable member 107 may protrude below the plane of the lower surface 103 of the nozzle plate 102 by a maximum protrusion distance d4. In some embodiments, the maximum protrusion distance d4 may be at least approximately 0.1 μm. In some embodiments, the maximum protrusion distance d4 of the movable member 107 may be less than or equal to half of the maximum width dimension d3 of the movable member 107 (i.e., d4 ≤ 1 / 2 of the maximum width dimension d3 of the movable member 107).

[0078] Referring again to Figure 1, the fluid conduit 111 can couple the internal chamber 105 of the bonding head 101 to a fluid source 112. The fluid source 112 can be configured to selectively supply fluid to the internal chamber 105 via the fluid conduit 111, as schematically shown by arrow 116. In some embodiments, the fluid supplied to the internal chamber can be a gas, such as air, H2, O2, N2, Ar, etc., including combinations thereof. In various embodiments, the fluid source 112 can be configured to control the flow rate of the fluid entering the internal chamber 105. The fluid source 112 can include, for example, a variable speed blower or fan that can be used to control the flow rate of the fluid entering the internal chamber 105. Alternatively or additionally, the fluid source 112 can include one or more valves that can be used to control the flow rate of the fluid entering the internal chamber 105 (e.g., from a fluid storage container). In various embodiments, the fluid source 112 is operatively coupled to the system controller 113 such that the system controller 113 can control the flow rate of the fluid from the fluid source 112 to the internal chamber 105 of the bonding head 101.

[0079] In various embodiments, the fluid flowing into the internal chamber 105 of the bonding head 101 can bias the movable member 107 against at least one retaining member 106 such that the lower surface of the movable member 107 can protrude a maximum protrusion distance d4 below the plane of the lower surface 103 of the nozzle plate 102, as Figure 1 shown.

[0080] Figure 2A The 2Kth figure shows a process of bonding a semiconductor integrated circuit die 201 to a target substrate 205 using the die bonding tool 100 according to various embodiments of the present disclosure. Figure 2AShown is a bonding head 101 of a die bonding tool 100 aligned above an upper surface 202 of a semiconductor integrated circuit die 201 according to an embodiment of the present disclosure. The semiconductor integrated circuit die 201 may include a semiconductor material such as silicon, having a plurality of circuit components and elements formed on and / or within the semiconductor material. The semiconductor integrated circuit die 201 is generally manufactured by sequentially depositing insulating or dielectric layers, conductive layers, and semiconductor layers of materials over a semiconductor substrate; patterning the various material layers using lithography to form an integrated circuit; and separating individual dies from a wafer, for example, by cutting between integrated circuits along scribe lines. In some embodiments, the semiconductor integrated circuit die 201 may be a system-on-chip (SoC) die. The system-on-chip die may include, for example, an application processor die, a central processing unit die, and / or a graphics processing unit die. In some embodiments, the semiconductor integrated circuit die 201 may be a memory die. The memory die may include, for example, a dynamic random access memory (DRAM) die and / or a high bandwidth memory (HBM) die. Other suitable semiconductor integrated circuit dies 201 (e.g., application-specific integrated circuit (ASIC) dies, analog dies, sensor dies, wireless and radio frequency dies, voltage regulator dies, etc.) are also within the scope contemplated by the present disclosure.

[0081] In some embodiments, the semiconductor integrated circuit die 201 may have a width dimension along a first horizontal direction hd1, which may be equal to or less than a width dimension d1 of a nozzle plate 102 of the bonding head 101. In some embodiments, the width dimension of the semiconductor integrated circuit die 201 may be at least approximately 1.5 cm. The semiconductor integrated circuit die 201 may be located on a suitable support element 210, which may be, for example, a carrier substrate, a flexible support (e.g., a dicing tape supported by a tape frame), or a separate die handling tool (e.g., a flip tool).

[0082] Figure 2B is a longitudinal cross-sectional view of a die bonding tool 100 according to various embodiments of the present disclosure, showing the bonding head 101 in contact with the upper surface 202 of the semiconductor integrated circuit die 201. Refer to Figure 2B, the bonding head 101 can be in contact with the semiconductor integrated circuit die 201. In some embodiments, the system controller 113 can control the actuator system 114 to move the bonding head 101 longitudinally downward so that the bonding head 101 contacts the upper surface 202 of the semiconductor integrated circuit die 201. Alternatively or additionally, an ejector apparatus or another die handling tool can be used to move the semiconductor integrated circuit die 201 longitudinally upward so that the upper surface 202 of the semiconductor integrated circuit die 201 contacts the bonding head 101. The fluid flowing from the fluid source 112 into the internal chamber 105 of the bonding head 101 can push the movable member 107 against at least one holding member 106 such that the lower surface of the movable member 107 can protrude below the plane of the lower surface 103 of the nozzle plate 102. In some embodiments, the lower surface of the movable member 107 can protrude below the plane of the lower surface 103 of the nozzle plate 102 by a maximum protrusion distance d4.

[0083] In various embodiments, the initial contact between the bonding head 101 and the semiconductor integrated circuit die 201 can occur between the lower surface of the movable member 107 and the upper surface 202 of the semiconductor integrated circuit die 201 in the central region of the semiconductor integrated circuit die 201. The suction force from each port 108 in the nozzle plate 102 of the bonding head 101 can pull the portion of the semiconductor integrated circuit die 201 under the port 108 upward toward the lower surface 103 of the nozzle plate 102. In this way, the bonding head 101 can impart a concave shape to the semiconductor integrated circuit die 201 fixed to the bonding head 101, wherein the lower surface 203 of the semiconductor integrated circuit die 201 can include a central region under the movable member 107, and this central region bulges downward relative to the peripheral region of the semiconductor integrated circuit die 201, and the peripheral region of the semiconductor integrated circuit die 201 is pulled upward toward the lower surface 103 of the nozzle plate 102 by the suction force of the ports 108 in the nozzle plate 102. The fluid pressure in the internal chamber 105 of the bonding head 101 can be sufficient to maintain the lower surface of the movable member 107 protruding below the lower surface 103 of the nozzle plate 102.

[0084] Figure 2C is a longitudinal cross-sectional view of the die bonding tool 100 according to various embodiments of the present disclosure, showing the semiconductor integrated circuit die 201 fixed to the bonding head 101. Refer to Figure 2C, the suction force from the port 108 in the lower surface 103 of the nozzle plate 102 may be sufficient to temporarily fix the semiconductor integrated circuit die 201 to the bonding head 101. The semiconductor integrated circuit die 201 may be removed from the support element 210, for example, by longitudinally moving the bonding head 101 and the semiconductor integrated circuit die 201 upward away from the support element 210, and / or by moving the support element 210 away from the semiconductor integrated circuit die 201 temporarily fixed to the bonding head 101. The fluid pressure in the internal chamber 105 of the bonding head 101 may be sufficient to maintain the lower surface of the movable member 107 protruding below the lower surface 103 of the nozzle plate. In this way, the lower surface 203 of the semiconductor die 201 may be maintained in the concave shape as described above with respect to Figure 2B described.

[0085] Figure 2D is a longitudinal cross-sectional view of the die bonding tool 100 according to an embodiment of the present disclosure, showing the bonding head 101 aligned above the upper surface 206 of the target substrate 205 and the semiconductor integrated circuit die 201 attached thereto. Referring to Figure 2D , the actuator system 114 may move the bonding head 101 along one or more horizontal directions to align the semiconductor integrated circuit die 201 above a portion of the target substrate 205 to which the semiconductor integrated circuit die 201 is to be bonded. The target substrate 205 may be located on the lower support member 211, such as a wafer chuck. In some embodiments, the target substrate 205 may be a semiconductor material substrate (i.e., a semiconductor wafer or a semiconductor die). The semiconductor material substrate may have one or more integrated circuits formed on or in the substrate 205. Other suitable target substrates 205, such as glass, ceramic, and / or organic material substrates, are also within the scope of the present disclosure.

[0086] In various embodiments, the semiconductor integrated circuit die 201 may have bonding features on the lower surface 203 of the semiconductor integrated circuit die 201 ( Figure 2D not shown). The target substrate 205 may have corresponding bonding features on the upper surface 206 of the target substrate 205 ( Figure 2D(not shown). In some embodiments, the bonding features may respectively include a bonding layer above the lower surface 203 of the semiconductor integrated circuit die 201 and a bonding layer above the upper surface 206 of the target substrate 205, which may enable the semiconductor integrated circuit die 201 to be bonded to the target substrate 205 using direct bonding techniques (e.g., metal-to-metal (M-M) and dielectric-to-dielectric (D-D) bonding techniques). Each bonding layer may include a plurality of bonding pads formed of a metal material (e.g., copper) embedded in a dielectric material matrix. In various embodiments, the bonding layers of the semiconductor integrated circuit die 201 and / or the target substrate 205 are optionally pretreated to promote surface activation (e.g., using a plasma treatment process). It should be understood that other types of bonding features (e.g., metal bumps, pillars, bonding pads, and / or solder material portions) may be located on the lower surface 203 of the semiconductor integrated circuit die 201 and / or the upper surface 206 of the target substrate 205 in various embodiments. Other bonding techniques are also within the scope of this disclosure.

[0087] The fluid pressure in the internal chamber 105 of the bonding head 101 may be sufficient to maintain the lower surface of the movable member 107 protruding below the lower surface 103 of the nozzle plate. In this way, the lower surface 203 of the semiconductor die 201 can maintain the concave shape as described above with respect to Figure 2B the description.

[0088] Figure 2E is a longitudinal cross-sectional view of a die bonding tool 100 according to an embodiment of the present disclosure, showing the bonding head 101 and the semiconductor integrated circuit die 201 attached thereto moving longitudinally downward toward the upper surface 206 of the target substrate 205. Referring to Figure 2E , the actuator system 114 may move the bonding head 101 and the semiconductor integrated circuit die 201 longitudinally downward to bring the lower surface 203 of the semiconductor integrated circuit die 201 into contact with the upper surface 206 of the target substrate 205. Alternatively, the lower support member 211 (wafer chuck) supporting the target substrate may move upward to contact the semiconductor integrated circuit die 201 temporarily fixed to the bonding head 101. The fluid pressure in the internal chamber 105 of the bonding head 101 may be sufficient to maintain the lower surface of the movable member 107 protruding below the lower surface 103 of the nozzle plate, such that the lower surface 203 of the semiconductor die 201 may have the concave shape as described above with respect to Figure 2B the description. Thus, the initial contact between the lower surface 203 of the semiconductor integrated circuit die 201 and the upper surface 206 of the target substrate 205 may occur in the central region of the semiconductor integrated circuit die 201. In various embodiments, by controlling asFigure 2E A modification of the semiconductor integrated circuit die 201 shown can control the position of the initial contact between the lower surface 203 of the semiconductor integrated circuit die 201 and the upper surface 206 of the target substrate 205. This can improve the bonding of the semiconductor integrated circuit die 201 to the target substrate 205 and suppress the formation of voids or bubbles between the semiconductor integrated circuit die 201 and the target substrate 205.

[0089] Figure 2F is a bottom-up view of the semiconductor integrated circuit die 201, schematically showing a bonding wave 204 generated during the process of bonding the lower surface 203 of the semiconductor integrated circuit die 201 to the upper surface 206 of the target substrate 205. Refer to Figure 2F , in a direct bonding process (e.g., metal-to-metal (M-M) and dielectric-to-dielectric (D-D) bonding processes), bringing the semiconductor integrated circuit die 201 into contact with the target substrate 205 can result in a pre-bonding process, in which chemical bonds (e.g., hydrogen bridge bonds) can be formed between the bonding layer on the lower surface 203 of the semiconductor integrated circuit die 201 and the corresponding bonding layer on the upper surface 206 of the target substrate 205. The front along of these chemical bond formations can be referred to as a "bonding wave". The shape and propagation of the bonding wave can be affected by various factors, including the mechanical strain and / or deformation of the semiconductor integrated circuit die 201 and / or the target substrate 205. In various embodiments of the present disclosure, improved control over the formation of the bonding wave can be achieved by using a bonding head 101 that controls the shape and deformation of the semiconductor integrated circuit die 201 during the bonding process. More specifically, the bonding wave can initially form in the central region of the semiconductor integrated circuit die 201 that makes initial contact with the target substrate 205 and can propagate radially outward toward the edge of the semiconductor integrated circuit die 201. Figure 2F Schematically shows the bonding wave 204 propagating from the central region of the semiconductor integrated circuit die 201 toward the edge of the semiconductor integrated circuit die 201 during the direct bonding process.

[0090] Figure 2G is a longitudinal cross-sectional view of a die bonding tool 100 according to an embodiment of the present disclosure, showing the bonding head 101 and the semiconductor integrated circuit die 201 attached thereto moving further toward the upper surface 206 of the target substrate 205. In an alternative embodiment, the lower support member 211 (wafer chuck) can move upward toward the semiconductor integrated circuit die temporarily fixed to the bonding head 101. Refer to Figure 2G, the actuator system 114 can cause the bonding head 101 and the semiconductor integrated circuit die 201 to continue to move longitudinally downward so that more portions of the lower surface 203 of the semiconductor integrated circuit die 201 contact the upper surface 206 of the target substrate 205. In various embodiments, as the bonding head 101 and the semiconductor integrated circuit die 201 continue to move toward the upper surface 206 of the target substrate 205, the movable member 107 can be partially retracted into the internal chamber 105 of the bonding head 101 such that the distance by which the lower surface of the movable member 107 protrudes below the lower surface 103 of the nozzle plate 102 can be less than the maximum protrusion distance d4. In some embodiments, the flow rate of the fluid 116 from the fluid source 112 through the fluid conduit 111 into the internal chamber 105 can be reduced, or the fluid flow can be completely shut off, to facilitate the partial retraction of the movable member 107 into the internal chamber 105. The partial retraction of the movable member 107 into the internal chamber 105 can cause a concave "bulge" in the central region of the lower surface 203 of the semiconductor integrated circuit die 201 to decrease and the semiconductor integrated circuit die 201 to flatten, such that the contact area between the lower surface 203 of the semiconductor integrated circuit die 201 and the upper surface 206 of the target substrate 205 can gradually increase.

[0091] Figure 2H is a bottom-up view of a semiconductor integrated circuit die 201 according to various embodiments of the present disclosure, schematically showing the propagation of the bonding wave 204 during a subsequent stage of the bonding process. Referring to Figure 2H , as the contact area between the lower surface 203 of the semiconductor integrated circuit die 201 and the upper surface 206 of the target substrate 205 gradually increases, the bonding wave 204 can continue to propagate outward from the central region of the semiconductor integrated circuit die 201 toward the edge of the semiconductor integrated circuit die 201, as Figure 2H shown. In various embodiments, the gradual increase in the contact area between the semiconductor integrated circuit die 201 and the target substrate 205 can enable the controlled propagation of the bonding wave radially outward from the center to the edge of the semiconductor integrated circuit die 201 without being interrupted by trapped air pockets or bubbles.

[0092] Figure 2I is a longitudinal cross-sectional view of a die bonding tool 100 according to an embodiment of the present disclosure, showing the bonding head 101 moving further toward the upper surface 206 of the target substrate 205 to bring the entire lower surface 203 of the semiconductor integrated circuit die 201 into contact with the upper surface 206 of the target substrate 205. Referring to Figure 2I, when the joint head 101 moves closer to the upper surface 206 of the target substrate 205, the movable member 107 can continue to retract into the internal chamber 105. Therefore, the concave "protrusions" in the lower surface 203 of the semiconductor integrated circuit die 201 can continue to decrease, and the semiconductor integrated circuit die 201 can continue to flatten, and the contact area between the lower surface 203 of the semiconductor integrated circuit die 201 and the upper surface 206 of the target substrate 205 can increase until the entire lower surface 203 of the target substrate 205 contacts the upper surface 206 of the target substrate 205. As Figure 2I shown, the movable member 107 can retract into the internal chamber 105 such that the lower surface of the movable member 107 does not protrude below the plane of the lower surface 103 of the nozzle plate 102.

[0093] Figure 2J is a bottom-up view of the semiconductor integrated circuit die 201 according to various embodiments of the present disclosure, schematically showing the propagation of the bonding wave 204 during subsequent stages of the bonding process. Referring to Figure 2J , as the contact area between the semiconductor integrated circuit die 201 and the target substrate 205 increases, the bonding wave 204 can continue to propagate outward to the edge of the semiconductor integrated circuit die 201. Figure 2J shows that the bonding wave 204 has almost reached the entire area of the semiconductor integrated circuit die 201 except for the four corner regions of the semiconductor integrated circuit die 201. In various embodiments, the bonding wave 204 can ultimately propagate over the entire surface of the semiconductor integrated circuit die 201.

[0094] Figure 2Kis a longitudinal cross-sectional view of the die bonding tool 100 after a bonding process of bonding a semiconductor integrated circuit die 201 to a target substrate 205 according to an embodiment of the present disclosure. In some embodiments, the semiconductor integrated circuit die 201 may be bonded to the target substrate 205 using direct bonding techniques (e.g., metal-to-metal (M-M) and dielectric-to-dielectric (D-D) bonding techniques). The bonding head 101 may be used to apply a compressive force to the upper surface 202 of the semiconductor integrated circuit die 201 during the bonding process. In some embodiments, during the bonding process, the flow rate of the fluid 116 entering the internal chamber 105 may be increased to bias the lower surface of the movable member 107 against the upper surface 202 of the semiconductor integrated circuit die 201. In some embodiments, the semiconductor integrated circuit die 201 and the target substrate 205 may be subjected to an elevated temperature during the bonding process, such as a temperature between about 150 °C and about 450 °C. In some embodiments, the elevated temperature may be provided by the aforementioned heat source 104 on the die bonding tool 100. The compressive force and heat provided by the die bonding tool 100 may result in the formation of a strong bond between the bonding layer on the lower surface 203 of the semiconductor integrated circuit die 201 and the corresponding bonding layer on the upper surface 206 of the target substrate 205.

[0095] In various embodiments, the die bonding tool 100 may release the semiconductor integrated circuit die 201 from the lower surface 103 of the nozzle plate 102 before, during, or after the bonding process. By closing / disconnecting the vacuum source 110 and / or by providing ambient pressure or positive pressure within the fluid conduit 109, the die bonding tool 100 may release the semiconductor die 201 from the lower surface 103 of the nozzle plate 102, thereby releasing the suction force at the port 108 in the nozzle plate 102. After the semiconductor integrated circuit die 201 is released from the lower surface 103 of the nozzle plate 102, the system controller 113 may cause the actuator system 114 to move the bonding head 101 longitudinally upward and away from the semiconductor integrated circuit die 201, as Figure 2K shown.

[0096] It should be understood that other bonding processes can be used to bond the semiconductor integrated circuit die 201 to the target substrate 205. For example, a thermocompression bonding (TCB) process can be utilized to bond the metal structures (e.g., metal bumps, pillars, and / or bonding pads) on the lower surface of the semiconductor integrated circuit die 201 to the corresponding metal structures (e.g., metal bumps, pillars, and / or bonding pads) on the upper surface of the target substrate 205. The bonding head 101 of the die bonding tool 100 can apply a compressive force to the semiconductor integrated circuit die 201 while heating the semiconductor integrated circuit die 201 and the target substrate 205. In some embodiments, the semiconductor integrated circuit die 201 and the target substrate 205 can be heated by the aforementioned heat source 104 on the die bonding tool 100. Under the applied pressure and elevated temperature, the surface portions of the metal structures of the semiconductor integrated circuit die 201 and the metal structures of the target substrate 205 can inter-diffuse to form a bond therebetween. In some embodiments, the bonding between the semiconductor integrated circuit die 201 and the target substrate 205 can be performed without using a soldering material. In other embodiments, a soldering material can be used to bond the bonding structure of the semiconductor integrated circuit die 201 to the corresponding bonding structure of the target substrate 205.

[0097] Figure 3A and Figure 3B is a longitudinal cross-sectional view of a die bonding tool 100 including a movable member 107 according to another embodiment of the present disclosure. Figure 3A and Figure 3B The die bonding tool 100 shown in Figures 1 to 2K may be similar to the die bonding tool 100 described above with respect to Figure 3A and Figure 3B Therefore, for the sake of brevity, the repeated description of similar elements is omitted. Figure 3A and Figure 3B The die bonding tool 100 in Figures 1 to 2K differs from the die bonding tool 100 in Figures 1 to 2K in that the motorized system 312 can drive the movement of the movable member 107 relative to the internal chamber 105 of the bonding head 101. In various embodiments, the motorized system 312 can include one or more motors, linear actuators, cams, sliders, linkages, plungers, and / or feedback sensors (e.g., encoders), etc., which can be configured to controllably move the movable member 107 relative to the internal chamber 105 of the bonding head 101. The motorized system 312 can be controlled by the system controller 113. The motorized system 312 can be configured to move the movable member 107 between the position shown in Figure 3A and the position shown in Figure 3B as shown in Figure 3AAt the position shown, the lower surface of the movable member 107 protrudes by a maximum protrusion distance d4 below the plane of the lower surface 103 of the nozzle plate 102. At Figure 3B the position shown, the lower surface of the movable member 107 does not protrude below the plane of the lower surface 103 of the nozzle plate 102. Figure 3A And Figure 3B the die bonding tool 100 shown in can be used to bond the semiconductor integrated circuit die 201 temporarily adhered to the bonding head 101 to the target substrate 205, as related above with respect to Figures 2A to 2K shown and described.

[0098] Figure 4 is a flowchart showing a method 401 of using the die bonding tool 100 to bond the semiconductor integrated circuit die 201 to the target substrate 205 according to an embodiment of the present disclosure. Referring to Figures 2A to 2D and Figure 4 , in step 402 of method 401, the semiconductor die 201 is fixed to the lower surface 103, and the bonding head 101 of the die bonding tool 100 can be positioned above the surface 206 of the substrate 205, wherein the bonding head 101 includes a movable member 107 that protrudes below the plane of the lower surface 103 of the bonding head 101 and contacts the semiconductor die 201 to impart a concave shape to the semiconductor die 201 fixed to the lower surface 103 of the bonding head 101.

[0099] Referring to Figure 2E , Figure 2F and Figure 4 , in step 404 of method 401, the bonding head 101 and the semiconductor integrated circuit die 201 can be moved toward each other such that the upper surface 206 of the substrate 205 can be brought into initial contact with the lower surface 203 of the semiconductor die 201 by the movable member 107 that protrudes below the plane of the lower surface 103 of the bonding head 101. Referring to Figure 2G , Figure 2H , Figure 2I , Figure 2J and Figure 4 , in step 406 of method 401, the bonding head 101 and the semiconductor die 105 can continue to move toward each other such that when the movable element 107 retracts into the inner chamber 105 of the bonding head 101, the surface 206 of the substrate 205 contacts the semiconductor die 201. Referring to Figure 2I , Figure 2J , Figure 2K and Figure 4 , in step 408 of method 401, a bonding process can be performed to bond the semiconductor die 201 to the surface 206 of the substrate 205.

[0100] Referring to all the accompanying drawings and in accordance with various embodiments of the present disclosure, the die bonding tool 100 includes a bonding head 101 configured to temporarily fix a semiconductor die 201 to the lower surface 103 of the bonding head 101. The bonding head 101 includes a movable member 107 that is at least partially located within an internal chamber 105 of the bonding head 101. The movable member 107 is movable relative to the internal chamber 105 between a first position and a second position. The lower surface of the movable member 107 protrudes below the lower surface 103 of the bonding head 101 in the first position, and the lower surface of the movable member 107 does not protrude below the lower surface 103 of the bonding head 101 in the second position. An actuator system 114 is configured to move the bonding head 101 and the semiconductor die 201 temporarily fixed thereto toward the upper surface 206 of a target substrate 205.

[0101] In one embodiment, the lower surface 103 of the bonding head 101 includes the lower surface 103 of a nozzle plate 102 having at least one port 108 therein, and the die bonding tool 100 further includes a vacuum source 110 fluidly coupled to at least one port 108 in the nozzle plate 102 and configured to selectively create a suction force at at least one port 108 in the nozzle plate 102 to temporarily fix the semiconductor die 201 against the lower surface 103 of the nozzle plate 102.

[0102] In another embodiment, the internal chamber 105 is located in a central region of the nozzle plate 102 and includes an opening 115 that is coplanar with the lower surface 103 of the nozzle plate 102.

[0103] In another embodiment, the width dimension d2 of the internal chamber 105 is equal to or less than half of the width dimension d1 of the lower surface 103 of the nozzle plate 102.

[0104] In another embodiment, the lower surface of the movable member 107 is configured to protrude a maximum protrusion distance d4 of at least 0.1 μm below the plane of the lower surface 103 of the nozzle plate 102.

[0105] In another embodiment, the die bonding tool 100 further includes a fluid source 112 configured to selectively supply fluid to the internal chamber 105 of the bonding head 101 to control the position of the movable member 107 relative to the internal chamber 105.

[0106] In another embodiment, the die bonding tool 100 further includes at least one retaining member 106 that is located around the periphery of the internal chamber 105 of the bonding head 101 and defines the width w of an opening 115 leading to the internal chamber 105.

[0107] In another embodiment, the maximum width d3 of the movable member 107 is greater than the width w of the opening 115 leading to the internal chamber 105 defined by at least one retaining member 106.

[0108] In another embodiment, the lower portion of the movable member 107 includes a curved, angled, or stepped outer surface such that the lower portion of the movable member 107 can protrude from the internal chamber 105 below the plane of the lower surface 103 of the nozzle plate 102.

[0109] In another embodiment, the maximum distance d4 that the movable member 107 can protrude below the plane of the lower surface 103 of the nozzle plate 102 is less than or equal to 1 / 2 of the maximum width d3 of the movable member 107.

[0110] In another embodiment, the die bonding tool 100 further includes a motorized system 312 configured to drive the movable member 107 relative to the internal chamber 105 of the bonding head 101.

[0111] Another embodiment relates to a die bonding tool 100 including a bonding head 101 and a system controller 113, the bonding head 101 configured to temporarily fix a semiconductor die 201 against the lower surface 103 of the bonding head 101, the bonding head 101 including a movable member 107 movable relative to the lower surface 103 of the bonding head 101, the system controller 113 operably coupled to the bonding head 101 and configured to control the movement of the bonding head 101 and the semiconductor die 201 fixed thereto relative to a target substrate 205; and to control the position of the movable member 107 relative to the lower surface 103 of the bonding head 101.

[0112] In one embodiment, the die bonding system 100 further includes an actuator system 114 and a vacuum source 110, the actuator system 114 coupled to the bonding head 101, wherein the system controller 113 controls the actuator system 114 to move the bonding head 101 relative to the target substrate 205, the vacuum source 110 fluidly coupled to at least one port 108 in the lower surface 103 of the bonding head 101, wherein the system controller 113 controls the vacuum source 110 to selectively provide suction at the at least one port 108 to fix the semiconductor die 201 against the lower surface 103 of the bonding head 101.

[0113] In another embodiment, the die bonding tool 100 further includes a fluid source 112 in fluid communication with the movable member 107, wherein the system controller 113 controls the flow of fluid from the fluid source 112 to the movable member 107 to control the position of the movable member 107 relative to the lower surface 103 of the bonding head 101.

[0114] In another embodiment, the die bonding tool 100 further includes a motorized system 312, where the system controller 113 controls the motorized system 312 to drive the movement of the movable member 107 relative to the lower surface 103 of the bonding head 101.

[0115] In another embodiment, the die bonding tool 100 further includes a heat source 104, where the system controller 113 controls the heat source 104 to selectively heat the semiconductor die 201.

[0116] Another embodiment relates to a method of bonding a semiconductor die 201 to a substrate 205. The method includes positioning the semiconductor die 201 fixed to the lower surface 103 of the bonding head 101 of the die bonding tool 100 above the surface 206 of the substrate 205, where the bonding head 101 includes a movable member 107 that protrudes below the plane of the lower surface 103 of the bonding head 101 and contacts the semiconductor die 201 to impart a concave shape to the semiconductor die 201 fixed to the lower surface 103 of the bonding head 101; moving the bonding head 101 and the semiconductor die 201 toward the surface 206 of the substrate 205 to initiate contact between the semiconductor die 201 and the surface 206 of the substrate 205 using the movable member 107 that protrudes below the plane of the lower surface 103 of the bonding head 101; continuing to move the bonding head 101 toward the surface 206 of the substrate 205 to place the semiconductor die 201 on the surface 206 of the substrate 205 when the movable member 107 retracts into the internal chamber 105 of the bonding head 101; and performing a bonding process to bond the semiconductor die 201 to the surface 206 of the substrate 205.

[0117] In one embodiment, placing the semiconductor die 201 on the surface 206 of the substrate 205 generates a bonding wave 204 that propagates radially outward from the central region of the semiconductor die 201 toward the peripheral edge of the semiconductor die 201.

[0118] In another embodiment, the method includes flowing a fluid into the internal chamber 105 of the bonding head 101 to maintain the movable member 107 protruding below the lower surface 103 of the bonding head 101 when the bonding head 101 and the semiconductor die 201 move toward the lower surface 206 of the substrate 205 to initiate contact between the semiconductor die 201 and the surface 206 of the substrate 205; and reducing the flow rate of the fluid flowing into the internal chamber 105 of the bonding head 101 after initial contact between the semiconductor die 201 and the substrate 205 so that the movable member 107 can retract into the internal chamber 105 when the semiconductor die 201 is placed on the substrate 205.

[0119] In another embodiment, the method includes controlling a motorized system 312 coupled to a movable member 107 to retract the movable member 107 into an internal chamber 105.

[0120] Various embodiments disclosed herein provide a die bonding tool 100 and a method of using the die bonding tool 100 of this embodiment to align a semiconductor integrated circuit die 201 with a target substrate 205. Various embodiments of the die bonding tool 100 can temporarily secure the semiconductor integrated circuit die 201 to the lower surface 103 of the bonding head 101 using suction applied through one or more openings or ports in the lower surface of the bonding head. Various embodiments of the die bonding tool 100 can temporarily secure the semiconductor integrated circuit die 201 to the lower surface 103 of the bonding head 101 to provide a concave shape of the semiconductor integrated circuit die 201. In this way, the die bonding tool 100 of various embodiments can contact the semiconductor integrated circuit die 201 and bond the semiconductor integrated circuit die 201 to the target substrate 205 to prevent the entrapment of voids, cavitation, or bubbles between the lower surface 203 of the semiconductor integrated circuit die 201 and the upper surface 206 of the target substrate 205 during the bonding process. As a result, after the bonding process, the situation where there are void regions between the die surfaces of the semiconductor integrated circuit die and the target substrate can be alleviated, thereby improving the device yield.

[0121] The foregoing text outlines the features of many embodiments, enabling those skilled in the art to better understand the present disclosure from various aspects. Those skilled in the art should understand and can easily design or modify other processes and structures based on the present disclosure to achieve the same purpose and / or achieve the same advantages as the embodiments introduced herein. Those skilled in the art should also understand that these equivalent structures do not depart from the novel spirit and scope of the present disclosure. Various changes, substitutions, or modifications can be made to the present disclosure without departing from the novel spirit and scope of the present disclosure.

Claims

1. A bare die bonding tool, characterized in that: include: a bonding head configured to temporarily fix a semiconductor die to a lower surface of the bonding head, the bonding head comprising a movable component at least partially located within an internal chamber of the bonding head, wherein the movable component is movable between a first position and a second position relative to the internal chamber, a lower surface of the movable component protruding below the lower surface of the bonding head in the first position, and the lower surface of the movable component does not protrude below the lower surface of the bonding head in the second position; as well as An actuator system is configured to move the bond head and the semiconductor die temporarily secured thereto toward an upper surface of a target substrate.

2. The bare die bonding tool according to claim 1, wherein: The lower surface of the bond head includes a lower surface of a nozzle plate having at least one port therein, and the die bonding tool further includes: A vacuum source is fluidly coupled to the at least one port in the nozzle plate and is configured to selectively generate a suction force at the at least one port in the nozzle plate to temporarily secure the semiconductor die against the lower surface of the nozzle plate.

3. The bare die bonding tool according to claim 2, wherein: The internal chamber is located in a central region of the nozzle plate and includes an opening coplanar with the lower surface of the nozzle plate.

4. The bare die bonding tool according to claim 3, wherein: A width dimension of the inner chamber is equal to or less than half of a width dimension of the lower surface of the nozzle plate.

5. The bare die bonding tool according to claim 2, wherein: The lower surface of the movable member is configured to protrude a maximum protrusion distance of at least 0.1 μm below a plane of the lower surface of the nozzle plate.

6. The bare die bonding tool according to claim 2, wherein: Also includes: A fluid source is configured to selectively provide a fluid to the interior chamber of the engagement head to control a position of the movable member relative to the interior chamber.

7. The bare die bonding tool according to claim 6, wherein: Also includes: At least one retaining member is positioned about a perimeter of the interior chamber of the engagement head and defines a width of an opening to the interior chamber.

8. The bare die bonding tool according to claim 7, wherein: The movable component has a maximum width that is greater than the width of the opening to the interior chamber defined by the at least one retaining member.

9. The bare die bonding tool according to claim 8, wherein: A lower portion of the movable member includes an outer surface that is curved, angled, or stepped to enable the lower portion of the movable member to protrude from the interior chamber below a plane of the lower surface of the nozzle plate.

10. A bare die bonding tool, characterized in that: include: a bond head configured to temporarily secure a semiconductor die against a surface of the bond head, the bond head including a movable member movable relative to the surface of the bond head; and a system controller operably coupled to the bond head and configured to: Controlling a movement of the bonding head and the semiconductor die secured thereto relative to a target substrate; and A position of the movable member relative to the surface of the engagement head is controlled.

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