Tightly packaged H-bridge module

Abstract

The utility model provides a tightly packaged H-bridge module, comprising a power switch unit, the power switch unit is installed on a substrate, and the substrate is used for electrical connection and heat dissipation; the power pin is arranged on the side surface of the substrate and is connected with the power switch unit; and the packaging body is used for packaging the power switch unit and the power pin. According to the utility model, the packaging defect of the power switch unit is overcome, miniaturization and micromation of products can be realized, the situation that the power switch unit is damaged due to overheat of the substrate in a large-current and high-power environment is avoided, and the service life of the H-bridge module is prolonged.

Description

Technical Field

[0001] The utility model relates to the technical field of integrated circuit packaging, in particular to a tightly packaged H-bridge module. Background Art

[0002] In the existing power switch units applied in H-bridge modules, the DPIM packaging structure disclosed in the patent publications such as CN308161832S, CN220556592U, CN220627804U, etc. or the SIP (System In a Package) form packaging process shown in CN308410064S is usually used.

[0003] As Figure 1 shown, in the traditional DPIM and SIP packages, the power pins are distributed on both sides of the product. According to the function and current-carrying capacity, the electrode sizes and cross-sectional areas of the pins on both sides are different. Compared with other packaging structures, the pins in the DPIM and SIP packages are thicker, and the relatively passing current and withstand voltage are higher, which is suitable for high-current environments.

[0004] This packaging structure is suitable for high-current and high-power environments and meets the application requirements. However, the tightness is insufficient. Moreover, if the tightness of the internal structure is improved, the substrate is prone to overheat and damage the power switch unit in high-current and high-power environments. Summary of the Utility Model

[0005] Aiming at the deficiencies in the prior art, the utility model provides a tightly packaged H-bridge module, which solves the problems in the prior art that the power switch unit is packaged by traditional DPIM and SIP flat packages, the tightness is insufficient, and there are obstacles to improving the tightness of this packaging structure.

[0006] According to an embodiment of the utility model, a tightly packaged H-bridge module includes:

[0007] A power switch unit, which is installed on a substrate, and the substrate includes a heat dissipation structure;

[0008] Power pins, which are arranged on the side surface of the substrate and connected to the power switch unit;

[0009] A package body, which is used to package the power switch unit and the power pins.

[0010] Optionally, the heat dissipation structure includes a copper-clad area provided on the surface of the substrate.

[0011] Optionally, the copper-clad area is externally connected to a heat dissipation device, and the heat dissipation device is any one of a heat sink, a heat dissipation plate, and a heat dissipation column.

[0012] Optionally, the power switch unit includes a MOSFET and / or an IGBT.

[0013] Optionally, the power switch unit further includes a protection diode connected in parallel with the IGBT.

[0014] Optionally, the power pins include a first pin group disposed on the first side surface of the substrate, a second pin group disposed on the second side surface of the substrate, a third pin group disposed on the third side surface of the substrate, and a fourth pin group disposed on the fourth side surface of the substrate;

[0015] The first pin group, the second pin group, the third pin group, and the fourth pin group are connected to the power switch unit through bonding wires or metal conductive tapes.

[0016] Optionally, the first pin group, the second pin group, the third pin group, and the fourth pin group are attached to the surface of the substrate, and the width dimension of each pin in the first pin group, the second pin group, the third pin group, and the fourth pin group is 0.5 mm to 5 mm.

[0017] Optionally, the distance between each pin in the first pin group is 0.3 mm to 1 mm;

[0018] The distance between each pin in the second pin group is 0.3 mm to 1 mm;

[0019] The distance between each pin in the third pin group is 0.3 mm to 1 mm;

[0020] The distance between each pin in the fourth pin group is 0.3 mm to 1 mm.

[0021] Optionally, the height of the package does not exceed the height of the power pins.

[0022] Optionally, the substrate includes any one of a ceramic substrate, a printed circuit board, and an aluminum substrate.

[0023] The technical principle of the present utility model is as follows: Referring to the package structure of QFP, the power switch unit is packaged, so that the internal structure is more compact, and the volume of the H-bridge module is reduced. At the same time, the substrate includes a heat dissipation structure, which avoids the situation that the substrate overheats and damages the power switch unit in a high-current and high-power environment.

[0024] Compared with the prior art, the present utility model has the following beneficial effects: A new package structure is provided for the power switch unit, the layout of the power pins is optimized, and a heat dissipation structure is added on the substrate, so as to realize the miniaturization and microminiaturization of the product while avoiding damaging the power switch unit, and increase the service life of the H-bridge module. Description of the Drawings

[0025] Figure 1 Schematic diagram of DPIM and SIP packages according to an embodiment of the present utility model;

[0026] Figure 2 Schematic diagram of a tightly sealed H-bridge module according to an embodiment of the present utility model;

[0027] Figure 3 Internal structure schematic diagram of a tightly sealed H-bridge module according to an embodiment of the present utility model;

[0028] Figure 4 Internal structure schematic diagram of DPIM and SIP packages according to an embodiment of the present utility model;

[0029] Figure 5 Another internal structure schematic diagram of a tightly sealed H-bridge module according to an embodiment of the present utility model;

[0030] Figure 6 Pin schematic diagram of QFP package according to an embodiment of the present utility model;

[0031] Figure 7 Pin schematic diagram of a tightly sealed H-bridge module according to an embodiment of the present utility model.

[0032] In the above-mentioned drawings: 1. Substrate; 2. Power switch unit; 3. Power pins; 31. First pin group; 32. Second pin group; 33. Third pin group; 34. Fourth pin group; 4. Package body. Detailed implementation manners

[0033] The technical solutions in the present utility model will be further described below with reference to the accompanying drawings and embodiments.

[0034] An embodiment of the present utility model provides a tightly sealed H-bridge module, which includes a substrate, a power switch unit, power pins and a package body. For the tightly sealed H-bridge module provided in this embodiment, the power switch unit is packaged with reference to the package structure of QFP (Quad Flat Package), making the internal structure more compact and reducing the volume of the H-bridge module. In addition, the substrate includes a heat dissipation structure, which avoids the situation that the substrate overheats and damages the power switch unit in an environment of large current and high power, thereby increasing the service life of the H-bridge module while realizing the miniaturization and microminiaturization of the product.

[0035] For the convenience of description, Figure 2 and Figure 3The above-mentioned substrate 1, power switch unit 2, power pins 3 and package 4 are shown. Among them, the power switch unit 2 is mounted on the substrate 1; the substrate 1 is used for electrical connection and dissipates heat through a heat dissipation structure; the power pins 3 are arranged on the side of the substrate 1 and connected to the power switch unit 2, and the package 4 is used to encapsulate the power switch unit 2 and the power pins 3 on the substrate 1. Among them, the power switch units 2 are usually assembled symmetrically in pairs and form an H-bridge with the power pins 3.

[0036] In specific applications, power switch units, such as MOSFETs and / or IGBTs, have a high heat flux density. In the case of a more compact internal structure, a very high thermal conductivity is required to ensure temperature rise and system efficiency. Therefore, the embodiment of the present invention also improves the substrate and solves the above problems by timely dissipating heat from the substrate through a heat dissipation structure. Exemplarily, the heat dissipation structure includes a copper-clad area provided on the surface of the substrate to improve the thermal conductivity. And in a better implementation, the copper-clad surface is externally connected to a heat dissipation device, where the heat dissipation device is any one of a heat sink, a heat dissipation plate, and a heat dissipation column, which is more conducive to the heat dissipation requirements of high-power devices.

[0037] In one embodiment, the above-mentioned power switch unit 2 includes MOSFETs and / or IGBTs. And when including an IGBT, it also includes a protection diode connected in parallel with the IGBT.

[0038] In specific applications, the substrate 1 may include one or more sides, and in the embodiment of the present invention, the power pins 3 are arranged on each side of the substrate 1.

[0039] As Figure 2 and Figure 3 shown, in one embodiment, the substrate 1 includes 4 sides. Then the power pins 3 may include a first pin group 31 arranged on the first side of the substrate 1, a second pin group 32 arranged on the second side of the substrate 1, a third pin group 33 arranged on the third side of the substrate 1, and a fourth pin group 34 arranged on the fourth side of the substrate 1. The first pin group 31, the second pin group 32, the third pin group 33, and the fourth pin group 34 are connected to the power switch unit through bonding wires or metal conductive tapes. And it can be understood that Figure 2 and Figure 3 only exemplarily shows that the first pin group 31 includes 4 pins, the second pin group 32 includes 6 pins, the third pin group 33 includes 4 pins, and the fourth pin group 34 includes 6 pins, which is not a limitation on the power pins 3 in the embodiment of the present invention.

[0040] In the embodiment of the present invention, the height of the above-mentioned package 4 does not exceed the height of the power pins 3.

[0041] In the embodiment of the present utility model, the above-mentioned encapsulation body 4 includes silicone gel or epoxy resin, and thus is encapsulated in a plastic encapsulation manner.

[0042] In the embodiment of the present utility model, the above-mentioned substrate 1 includes any one of a ceramic substrate, a printed circuit board, and an aluminum substrate. And in a preferred implementation, the substrate adopts a ceramic substrate, so as to dissipate heat through the copper-clad surface of the DBC board.

[0043] The encapsulation structure of the embodiment of the present utility model realizes a high-density pin layout, and more functions can be integrated in a relatively small encapsulation size, making the internal structure more compact, which helps to miniaturize and micro-miniaturize the entire integrated circuit, and thus achieves the effect of product miniaturization and micro-miniaturization. Moreover, the creepage distance can be shortened.

[0044] The embodiment of the present utility model also explains the above-mentioned shortening of the creepage distance. Among them, the creepage distance is the shortest path measured along the insulating surface between two conductive components or between a conductive component and the device protection interface.

[0045] Based on this, please refer to Figure 4 and Figure 5 , Figure 4 which are the internal structures of DPIM and SIP encapsulations, Figure 5 is the internal structure of the tightly encapsulated H-bridge module provided by the embodiment of the present utility model, and Figure 4 and Figure 5 show that the product appearance width dimensions are the same. Figure 4 In Figure 4 , 4a + 2b is the creepage distance from power pin A to power pin B in DPIM and SIP encapsulations, Figure 5 in Figure 5 , 4a + 4b is the creepage distance from power pin C to power pin B in the products of DPIM and SIP encapsulations,

[0046] It should be noted that Figure 4 the power pins A, C, and B in Figure 5 are the same power pins as the power pins A1, C, and B1 in Figure 4 , but are in different positions due to different pin layouts. Among them, Figure 4The length from the medium-power pin C to the power pin B is expressed as 4a + 4b. Figure 5 The number of power pins from the medium-power pin C to the power pin B1 is less, including the power pin with 1 large electrode and the power pins with 4 small electrodes. Therefore, Figure 5 The length from the medium-power pin C to the power pin B1 is expressed as a + 4b.

[0047] The embodiments of the present invention calculate Figure 4 and Figure 5 the creepage distance between two identical pins in Figure 4 i.e., the creepage distance A - B in Figure 5 The calculation formula is: AB2 = (4a + 2b)2 + (4a + 4b)2, and Figure 4 and Figure 5 the creepage distance A1 - B1 in

[0048] The calculation formula is: A1B12 = (4a + 2b)2 + (a + 4b)2, where a ≥ 2b. Therefore, AB > A1B1. Thus, Figure 7 the creepage distances between two identical pins in Figure 6 are different. And according to the calculation results, in comparison, the tightly packaged H-bridge module structure provided by the embodiments of the present invention is more compact, the current flow distance between the pins on each side is relatively small, and the creepage distance is shorter.

[0049] In addition, as Figure 6 and Figure 7As shown, the embodiments of the present utility model are different from the QFP package in terms of pin specifications. The width dimensions of the pins in the first pin group 31, the second pin group 32, the third pin group 33, and the fourth pin group 34 are 0.5 mm to 5 mm. The pin widths of the QFP package are usually smaller because the QFP package is mainly applied to low-voltage and low-current environments; while the embodiments of the present utility model are mainly applied to high-voltage and high-current environments. And as Figure 7 shown, in the embodiments of the present utility model, the height of the package body 4 does not exceed the height of the power pins 3.

[0050] In specific applications, according to different installation methods, pin specifications, and the number of pins, the distances between the pins in each pin group can be various. Exemplarily, the distance between the pins in the first pin group 31 is 0.3 mm to 1 mm; the distance between the pins in the second pin group 32 is 0.3 mm to 1 mm; the distance between the pins in the third pin group 33 is 0.3 mm to 1 mm; the distance between the pins in the fourth pin group 34 is 0.3 mm to 1 mm.

[0051] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present utility model and not to limit them. Although the present utility model has been described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that the technical solutions of the present utility model can be modified or equivalently replaced without departing from the purpose and scope of the technical solutions of the present utility model, and they should all be covered within the scope of the claims of the present utility model.

Claims

1. A compact H-bridge module, characterized in that: include: A power switch unit, wherein the power switch unit is mounted on a substrate, and the substrate includes a heat dissipation structure; A power pin, wherein the power pin is arranged on a side of the substrate and connected to the power switch unit; A package body, the package body is used to package the power switch unit and the power pin; The power pins include a first pin group disposed on the first side of the substrate, a second pin group disposed on the second side of the substrate, a third pin group disposed on the third side of the substrate, and a fourth pin group disposed on the fourth side of the substrate; The first pin group, the second pin group, the third pin group and the fourth pin group are connected to the power switch unit through bonding wires or metal conductive strips; The first pin group, the second pin group, the third pin group and the fourth pin group are attached to the surface of the substrate, and the width of each pin in the first pin group, the second pin group, the third pin group and the fourth pin group is 0.5 mm to 5 mm.

2. The tightly packed H-bridge module according to claim 1, characterized in that: The heat dissipation structure includes a copper-clad area arranged on the surface of the substrate.

3. The tightly packed H-bridge module according to claim 2, characterized in that: The copper-clad area is externally connected to a heat dissipation device, and the heat dissipation device is any one of a heat sink, a heat dissipation plate, and a heat dissipation column.

4. The compact H-bridge module according to any one of claims 1 to 3, characterized in that: The power switch unit includes a MOSFET and / or an IGBT.

5. The tightly packed H-bridge module according to claim 4, characterized in that: The power switch unit further includes a protection diode connected in parallel with the IGBT.

6. The compact packaged H-bridge module according to claim 1, characterized in that: The distance between each pin in the first pin group is 0.3 mm to 1 mm; The distance between each pin in the second pin group is 0.3 mm to 1 mm; The distance between each pin in the third pin group is 0.3 mm to 1 mm; The distance between each pin in the fourth pin group is 0.3 mm to 1 mm.

7. The compactly packaged H-bridge module according to any one of claims 1 to 3, characterized in that: The height of the package body does not exceed the height of the power pins.

8. The compactly packaged H-bridge module according to any one of claims 1 to 3, characterized in that: The substrate includes any one of a ceramic substrate, a printed circuit board, and an aluminum substrate.

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