Lead bonding device

Abstract

The utility model provides a lead bonding device, and relates to the technical field of semiconductor manufacturing, the lead bonding device comprises a supporting table and a bonding assembly which are matched with each other, the bonding assembly generates ultrasonic vibration in the bonding process of a chip of a power module, the supporting table is provided with a bonding station used for bearing the power module, a buffer pad is arranged in the bonding station, and the power module is arranged in the buffer pad. The buffer pad is located between the supporting table and the power module to absorb and buffer ultrasonic vibration generated by the bonding assembly, so that the ultrasonic vibration cannot be directly conducted to a hard material of the supporting table, unnecessary displacement of the power module in the bonding process due to vibration rebound is avoided, and the bonding quality of the power module is improved. And the stable state of the power module in the whole bonding process is ensured, so that the stable connection between the chip and the lead is maintained, and the service life of the power module is prolonged.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and more particularly, to a wire bonding device. Background Art

[0002] In power modules, wire bonding is a common and critical electrical connection method, mainly used to achieve electrical connections between chips inside the package and between the chips and external pins. The quality of wire bonding directly affects the electrical performance and reliability of power modules. Therefore, during the wire bonding process, it is necessary to ensure that the diameter of the bonding wire is appropriate and the length is consistent; at the same time, the bonding points need to be firmly connected, evenly distributed, and able to meet the current-carrying requirements.

[0003] Especially in high-power modules, due to the need to withstand large currents, thick wire diameter leads must be used to ensure that they can carry large currents. The thick wire diameter wire bonding technology is a high-power bonding technology developed on the basis of the thin wire diameter wire bonding technology. During bonding, if the lead diameter is too large, it will increase the parasitic inductance, thus affecting the high-frequency performance of the module. If the diameter is too small, the bonding strength will be insufficient, thereby reducing the reliability of the module. Therefore, it is necessary to select an appropriate lead diameter and select appropriate bonding parameters according to the diameter of the lead to achieve good electrical connection.

[0004] However, in the prior art, during the high-power bonding process, problems such as the detachment of the lead frame connection terminals or the leads on the chip often occur due to the ultrasonic vibration generated during the bonding process. This situation not only seriously affects the production yield of the process but may also have an adverse impact on the long-term reliability of power modules. Summary of the Utility Model

[0005] The purpose of this application is to provide a wire bonding device for the deficiencies in the above-mentioned prior art.

[0006] To achieve the above purpose, the technical solutions adopted in the embodiments of this application are as follows:

[0007] The embodiments of this application provide a wire bonding device, including a support table and a bonding component that cooperate with each other. The bonding component generates ultrasonic vibration during the bonding process of the chips of the power module. The support table has a bonding station for carrying the power module, and a buffer pad is arranged in the bonding station. The buffer pad is located between the support table and the power module and is used to buffer the ultrasonic vibration generated by the bonding component.

[0008] Optionally, the wire bonding device includes a lifting mechanism, and the support table is connected to the lifting mechanism.

[0009] Optionally, the wire bonding device includes a limiting mechanism, and the support table is connected to the limiting mechanism to limit the maximum lifting position of the support table after being lifted by the lifting mechanism.

[0010] Optionally, a three-dimensional pattern structure is provided on at least one surface of the cushion.

[0011] Optionally, the cushion is a rubber pad.

[0012] Optionally, the thickness of the cushion is 0.3 mm to 15 mm.

[0013] Optionally, the wire bonding device is applicable to wires with a wire diameter of 0.1 mm to 15 mm.

[0014] Optionally, the bonding assembly includes a capillary assembly located above the support table, and the capillary assembly is used to guide the wire to bond with the chip.

[0015] Optionally, the bonding assembly further includes a robotic arm, and the robotic arm is connected to the capillary assembly.

[0016] Optionally, the bonding assembly further includes an ultrasonic generator and a transducer system, and the ultrasonic generator is connected to the capillary assembly through the transducer system.

[0017] The beneficial effects of the present application include:

[0018] The present application provides a wire bonding device, including a support table and a bonding assembly that cooperate with each other. The bonding assembly generates ultrasonic vibrations during the bonding process of the chip of the power module. The support table has a bonding station for carrying the power module, and a cushion is arranged in the bonding station. The cushion is located between the support table and the power module to absorb and buffer the excessive ultrasonic vibrations generated by the bonding assembly, so that the ultrasonic vibrations will not be directly conducted to the hard material of the support table, thereby avoiding unnecessary displacement of the power module during the bonding process due to vibration rebound, ensuring the stable state of the power module during the entire bonding process, thus maintaining a firm connection between the chip and the wire, and extending the service life of the power module.

[0019] In summary, by introducing a cushion into the wire bonding device, the problem of vibration conduction during the bonding process is effectively prevented, the risk of wire detachment is greatly reduced, the high reliability of the power module is ensured, the stability and bonding accuracy of the wire bonding device are improved, and the overall production yield of the wire bonding device is enhanced. Description of the Drawings

[0020] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings required to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as limiting the scope. For those of ordinary skill in the art, other related drawings can be obtained based on these drawings without creative efforts.

[0021] Figure 1 One of the schematic structural diagrams of a wire bonding device provided by an embodiment of the present application;

[0022] Figure 2 Another schematic structural diagram of a wire bonding device provided by an embodiment of the present application;

[0023] Figure 3 A flowchart of wire bonding provided by an embodiment of the present application.

[0024] Reference numerals: 11 - support table; 12 - buffer pad; 13 - bonding tool assembly; 21 - wire; 211 - wire neck; 31 - heat dissipation substrate; 32 - metallized ceramic substrate; 33 - chip; 34 - lead frame; 341 - lead terminal. Detailed implementation manners

[0025] To make the objectives, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Apparently, the described embodiments are some but not all of the embodiments of the present application. Usually, the components of the embodiments of the present application described and illustrated in the accompanying drawings here can be arranged and designed in various different configurations.

[0026] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application claimed, but merely represents selected embodiments of the present application. It should be noted that, without conflict, the various features in the embodiments of the present application can be combined with each other, and the combined embodiments are still within the protection scope of the present application.

[0027] It should be noted that similar reference numerals and letters indicate similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0028] In the description of the present application, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship in which the product of this application is usually placed when in use. It is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present application. In addition, the terms "first", "second", "third", etc. are only used for descriptive distinction and cannot be understood as indicating or implying relative importance.

[0029] In addition, terms such as "horizontal" and "vertical" do not require the components to be absolutely horizontal or hanging vertically, but can be slightly inclined. For example, "horizontal" only means that its direction is more horizontal relative to "vertical", and does not mean that the structure must be completely horizontal, but can be slightly inclined.

[0030] In the description of the present application, it should also be noted that unless otherwise clearly specified and limited, the terms "arranged", "installed", "connected", and "coupled" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and can be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0031] An embodiment of the present application provides a wire bonding device, as Figure 1 shown, which includes a supporting platform 11 and a bonding component that cooperate with each other. The supporting platform 11 has a bonding station for carrying a power module. The bonding component generates ultrasonic vibrations during the bonding process of the chip 33 of the power module placed at the bonding station.

[0032] Specifically, the bonding component bonds the chip 33 of the power module placed on the supporting platform 11 by ultrasonic bonding. During the ultrasonic bonding process, the bonding of the lead 21 is usually completed within dozens to hundreds of milliseconds. This process can be divided into multiple stages: In the pre-deformation stage, the bonding head pre-deforms the lead 21 under the bonding pressure and makes initial contact with the material to be bonded (such as the chip 33 or the lead terminal 341). In the cleaning stage, the bonding head drives the lead 21 to vibrate periodically under the influence of ultrasonic power, quickly rubs the surface of the material to be bonded, removes the interfacial oxide layer, exposes the pure metal, forms a clean area, expands the contact area of the bonding interface, and makes the metal interface atoms in the clean area become active to form a bonding area, thereby creating conditions for subsequent firm bonding. As the bonding process progresses, the ultrasonic energy gradually increases. At this stage, the amplitude of the bonding head increases, which causes partial amplitude generation in a small section of the lead 21 in the middle of the bonding head. At this time, the energy begins to conduct downward to the surfaces of the lead 21 and the chip 33 or the lead terminal 341 to be bonded. Among them, the lead 21 is usually an aluminum wire, and the material of the lead terminal 341 is copper or nickel-plated copper. The goal of this stage is to generate plastic deformation between the lead 21 and the substrate through ultrasonic vibration, so as to achieve a stable metal-to-metal connection. However, this part of the ultrasonic vibration is likely to be conducted and rebounded through hard materials such as the supporting platform 11, resulting in unnecessary shaking and vibration of the power module during the bonding process, thereby affecting the bonding reliability.

[0033] To counteract the excess energy conducted from the bonding head, a buffer pad 12 is provided within the bonding station. The buffer pad 12 is located between the support table 11 and the power module to absorb and buffer the excessive ultrasonic vibrations generated by the bonding assembly, preventing the ultrasonic vibrations from directly conducting to the rigid material of the support table 11. This avoids unnecessary displacement of the power module during the bonding process due to vibration rebound, ensuring the stable state of the power module throughout the bonding process, thereby maintaining a firm connection between the chip 33 and the lead 21 and extending the service life of the power module.

[0034] In summary, by introducing the buffer pad 12 into the wire bonding device, the problem of vibration conduction during the bonding process is effectively prevented, the risk of lead 21 detachment is greatly reduced, the high reliability of the power module is ensured, the stability and bonding accuracy of the wire bonding device are improved, and the overall production yield of the wire bonding device is enhanced.

[0035] It should be noted that the power module includes a heat dissipation substrate 31, a metallized ceramic substrate 32, and a chip 33 that are stacked in sequence. The heat dissipation substrate 31 is directly placed on the buffer pad 12 and has a flat bottom design to ensure close fitting with the buffer pad 12. The heat dissipation substrate 31 is made of a metal material with excellent thermal conductivity, such as a copper substrate, to quickly conduct the heat generated by the chip 33 and prevent overheating. In addition, the heat dissipation substrate 31 can also provide mechanical support for other parts of the power module. The metallized ceramic substrate 32 is placed on top of the heat dissipation substrate 31 and connected to it by welding or other means. The function of the metallized ceramic substrate 32 is to provide electrical connection for the chip 33. This substrate usually uses a ceramic substrate with direct copper plating or direct copper deposition to ensure both good electrical conductivity and certain insulation performance, thus meeting the multiple requirements of the power module. The chip 33 is electrically connected to the metallized ceramic substrate 32 by welding or other means. This connection method ensures efficient communication between the chip 33 and the external circuit and also uses the conductive layer of the substrate to conduct current. A lead frame 34 is connected to the side of the heat dissipation substrate 31, and the lead frame 34 provides an interface for external electrical connection of the power module. The bonding assembly first bonds one end of the lead 21 to the lead terminal 341 of the lead frame 34, and then bonds the other end of the lead 21 to the chip 33 to form a complete electrical circuit, enabling the chip 33 to be connected to the external circuit through the lead frame 34, thereby realizing the function of the power module.

[0036] It should also be noted that the heat dissipation substrate 31 may have cambers during the reflow soldering process, that is, the central area of the substrate arches upward or sags. Excessive cambers will cause poor contact between the heat dissipation substrate 31 and other layers, affect the heat conduction efficiency, and further lead to insufficient heat dissipation of the power module during operation, which may cause overheating problems. Secondly, the camber may also cause stress concentration at the solder joints, increasing the risk of solder joint cracking or detachment. In addition, the unevenness of the heat dissipation substrate 31 will have an adverse impact on the mechanical stability of the power module, which may lead to structural failure of the power module during subsequent use. As an elastic material, the buffer pad 12 can adapt to the curvature of the substrate through deformation, so as to absorb and relieve the mechanical stress caused by the camber of the heat dissipation substrate 31 during the installation or soldering process of the power module, maintain uniform contact between the heat dissipation substrate 31 and the support table 11, and avoid the failure risk caused by uneven local stress.

[0037] Optionally, the wire bonding device includes a lifting mechanism, and the support table 11 is connected to the lifting mechanism.

[0038] Specifically, in the high-power bonding process, due to the relatively thick wire diameter of the lead 21, a relatively large bonding force needs to be applied to ensure a firm connection between the lead 21 and the chip 33 or the lead frame 34. The relatively large bonding force requires the power module to maintain stable and precise positioning during the bonding process, otherwise it is easy to cause unstable connection between the lead 21 and the bonding point, affecting the reliability of the final product. Therefore, the positioning height and support stability of the power module become key factors.

[0039] To ensure the stability of the power module during the high-power bonding process and optimize the bonding effect, it is usually necessary to lift the power module to a certain height to shorten the distance between the power module and the bonding component. By shortening the distance, not only can the mechanical error during the bonding process be reduced, but also the effective transmission of the bonding force can be improved, so as to ensure that the thick wire diameter lead 21 can be firmly bonded at the predetermined position. In addition, an appropriate height can also reduce the influence of vibration and other interference factors, further improving the bonding accuracy and quality.

[0040] By introducing a lifting mechanism, the power module can be accurately positioned at an appropriate height below the bonding component, ensuring that the connection between the lead 21 and the bonding point can withstand the higher mechanical stress required for high-power operation. At the same time, the lifting mechanism control of the support table 11 can also be integrated with the automated production line, so that the height of the support table 11 always matches the bonding parameters of the bonding component, thereby increasing the success rate of lead 21 bonding and reducing bonding failures caused by improper height or vibration.

[0041] Optionally, the wire bonding device includes a limiting mechanism, and the support table 11 is connected to the limiting mechanism to limit the maximum lifting position of the support table 11 after being lifted by the lifting mechanism.

[0042] Specifically, after adjusting the support platform 11 to an appropriate height using the lifting mechanism, the position of the support platform 11 can be fixed by the limiting mechanism. The limiting mechanism locks the height position of the support platform 11 by connecting with the support platform 11, preventing its position from shifting due to vibration or other external forces during the bonding process. This design fully considers the mechanical stability and precision requirements of the power module during the bonding process, ensuring that the support platform 11 can always remain in the optimal position under different operating conditions. In actual operation, usually only after the lifting mechanism drives the support platform 11 to rise to the maximum rising position, the support platform 11 is limited by the limiting mechanism to keep it stationary, and the bonding parameters are adjusted during the subsequent bonding process to match the height of the power module. The operation is simple and can effectively improve the bonding efficiency.

[0043] Through the collaborative work of the limiting mechanism and the lifting mechanism, the entire power module can maintain height stability at different heights, improving the precision of the bonding process. Overall, this design significantly enhances the practicality and operational reliability of the wire bonding device, providing solid technical support for the manufacturing of power modules.

[0044] Optionally, a three-dimensional pattern structure is provided on at least one surface of the buffer pad 12.

[0045] Specifically, the at least one surface of the buffer pad 12 is subjected to embossing treatment to form a three-dimensional pattern structure. The embossing treatment is performed by mechanically processing or molding the surface of the buffer pad 12 to form a three-dimensional pattern structure with a certain depth and shape. This surface structure can increase the surface area of the buffer pad 12 and form uneven textures in different directions. When ultrasonic vibration is transmitted to the buffer pad 12, the three-dimensional pattern can disperse and gradually dissipate the vibration wave through the complex surface morphology, thereby reducing the transmission of vibration energy. The presence of the three-dimensional pattern enables the buffer pad 12 to not only absorb vibration in the vertical direction but also cancel vibration waves from different directions in the horizontal direction, improving the overall vibration absorption effect.

[0046] According to actual needs, the three-dimensional pattern structure can be designed as a regular grid, wavy, or other complex geometric shapes to maximize the vibration dissipation path. After the contact surface of the buffer pad 12 with the power module is subjected to embossing treatment, it can fit more closely to the bottom structure of the power module and increase the damping effect without affecting the heat conduction performance. Through this structural connection, the buffer pad 12 provides stronger anti-vibration capabilities in different directions, enhancing the stability of the power module in a high-frequency environment.

[0047] Generally speaking, by embossing the surface of the buffer pad 12, the vibration absorption ability of the buffer pad 12 is significantly improved. The three-dimensional pattern structure effectively disperses the ultrasonic vibrations from different directions, avoiding the concentration of vibrations inside the power module, thereby reducing the stress concentration at the bonding points and the risk of potential mechanical damage. This design not only extends the service life of the power module but also improves its reliability and stability under high-load conditions. In addition, the embossed buffer pad 12 does not significantly increase the production cost while ensuring mechanical properties, which is an efficient and economical solution.

[0048] Optionally, the buffer pad 12 is a rubber pad.

[0049] Specifically, the buffer pad 12 is usually a rubber pad, but other soft elastic materials can also be used to meet different process requirements. Rubber pads are widely used in various precision electronic components due to their excellent elasticity and shock absorption performance. Their structure is usually a multi-layered gum material that can effectively disperse and absorb vibration energy. In addition, other soft materials such as silicone, foam materials, or rubber can also be used, which provide additional flexibility and adaptability in different application environments. The buffer pad 12 forms a stable interface by adhering or clamping between the support platform 11 and the power module, ensuring effective control of vibrations during the bonding process, thereby reducing the risk of mechanical stress and module damage caused by vibrations.

[0050] Optionally, the thickness of the buffer pad 12 is 0.3 mm to 15 mm.

[0051] Specifically, leads 21 with different wire diameters require different forces and vibration frequencies during bonding. Therefore, the thickness of the buffer pad 12 must match the wire diameter of the lead 21 and the bonding parameters. For thicker leads 21, greater force needs to be applied during the bonding process, which generates larger vibrations and mechanical stress. Therefore, a thicker buffer pad 12 is required to absorb and disperse these stresses to prevent damage to the internal structure of the power module. For thinner leads 21, a thinner buffer pad 12 can provide sufficient buffering effect to avoid excessive absorption of vibrations and affecting the bonding accuracy.

[0052] The thickness range of the buffer pad 12 is designed to be 0.3 mm to 15 mm to cover various bonding requirements from thin wire diameters to thick wire diameters. When selecting the appropriate thickness of the buffer pad 12, the specific wire diameter of the lead 21 must be considered to ensure that the lead 21 can be firmly bonded to the chip 33 or the lead frame 34.

[0053] During the production process, according to the specific wire diameter of the lead 21 and the bonding parameters, the operator can select a buffer pad 12 with an appropriate thickness and paste it on the bonding station surface of the support table 11. For a thicker buffer pad 12, its elasticity and absorption capacity are stronger, which is suitable for high-strength bonding of thick wire diameter leads 21. For a thinner buffer pad 12, it is more suitable for precise bonding of thin wire diameter leads 21. To ensure the best bonding effect, the buffer pad 12 can be used as a consumable and replaced in a timely manner when needed to adapt to the bonding of leads 21 with different wire diameters.

[0054] Generally speaking, by reasonably selecting and adjusting the thickness of the buffer pad 12, the quality and reliability of the lead 21 bonding can be significantly improved. A buffer pad 12 with an appropriate thickness can effectively absorb the mechanical stress and ultrasonic vibration generated during the bonding process, reduce the stress concentration in the internal structure of the power module, and thus reduce the risk of lead 21 detachment and bonding point damage.

[0055] Optionally, the lead bonding device is applicable to leads 21 with a wire diameter ranging from 0.1 mm to 15 mm.

[0056] In a high-power module, since the chip 33 needs to withstand and conduct large currents and high voltages, and the thin leads 21 are difficult to effectively disperse the heat and mechanical stress they bear due to their small cross-sectional area, they are prone to fatigue and damage during long-term operation. Therefore, to ensure the reliability of the high-power module, thicker leads 21 must be used for bonding. The thick wire diameter leads 21, due to their larger cross-sectional area, can carry a higher current density, reduce resistance heating and mechanical stress concentration, and significantly improve the mechanical strength and durability of the bonding points.

[0057] The lead bonding device provided by the embodiment of the present application is suitable for bonding leads 21 with a wire diameter ranging from 0.1 mm to 15 mm. This wide applicability ensures its flexibility in various high-power applications. By precisely controlling the bonding pressure, time, and temperature, the lead bonding device can form strong bonding points between the chip 33 and the lead frame 34 or the chip 33, thus meeting the requirements of large current transmission. In addition, the adjustment function of the lead bonding device allows the operator to make precise settings and operations according to the specific wire diameter and power module requirements to ensure the bonding quality.

[0058] Optionally, the bonding assembly includes a bonding tool assembly 13 located above the support table 11, and the bonding tool assembly 13 is used to guide the bonding of the lead 21 with the chip 33.

[0059] Such as Figure 1As shown, in the wire 21 bonding process, the capillary assembly 13, as the core bonding head, plays a crucial role in guiding the wire 21 to form a reliable physical connection with the chip 33 or the wire terminal 341, and its shape can be wedge-shaped. The capillary assembly 13 is usually located above the support table 11, and its function is to firmly pressure-weld the wire 21 to the chip 33 or the wire terminal 341 through precisely controlled mechanical vibration and pressure during the bonding process. Through this mechanical vibration, the capillary assembly 13 can complete the frictional extrusion of the wire 21 in an extremely short time, prompting the wire 21 to form a firm physical bond with the bonding area.

[0060] Specifically, when the capillary assembly 13 is bonding, it oscillates back and forth along the direction of the wire 21, and firmly pressure-welds the wire 21 to the chip 33 or the wire terminal 341 through friction and extrusion. The key in this process is that the end face of the capillary assembly 13 must apply an appropriate downward static pressure to the wire 21 and generate sufficient frictional force between the wire 21 and the bonding area to promote the relative diffusion between metals, thereby achieving a reliable bond.

[0061] However, as Figure 2 shown, when the capillary assembly 13 vibrates, the trailing edge of its end face will inevitably rub against the wire neck 211, and this friction may cause deformation of the wire neck 211, and then lead to damage or even fracture. If the applied welding pressure is too high, or the ultrasonic power is too high, while the capillary assembly 13 completes the bonding, it may cause excessive stress on the wire neck 211, resulting in its fracture at the bonding point. This situation is particularly likely to occur when the wire 21 undergoes multiple vibrations or repeated forces. Setting a smaller ultrasonic power and a lower bonding pressure can reduce the stress concentration on the wire neck 211, but if the parameters are set too small, it will cause the capillary assembly 13 to be unable to generate sufficient frictional force and extrusion force, making the wire 21 unable to fully form a firm physical bond with the chip 33 or the wire terminal 341.

[0062] Therefore, the operating parameters of the capillary assembly 13 must be precisely set and controlled. Among them, the ultrasonic power and the bonding pressure are two crucial parameters, and a balance must be found between the ultrasonic power and the bonding pressure, which can not only ensure the firm connection between the wire 21 and the bonding point, but also prevent the wire neck 211 from breaking. By precisely setting the ultrasonic power and the bonding pressure, the capillary assembly 13 can achieve high-quality wire 21 bonding, ensure that the wire 21 forms a stable electrical connection between the chip 33 and the wire terminal 341, and at the same time reduce the damage to the wire neck 211. This optimized bonding process not only improves the mechanical strength of the bonding point, but also significantly reduces the risk of wire 21 fracture and other mechanical damages, thereby improving the reliability and service life of the entire power module.

[0063] Optionally, the bonding assembly further includes an ultrasonic generator and a transducer system. The ultrasonic generator is connected to the capillary assembly 13 via the transducer system.

[0064] Specifically, the ultrasonic generator in the bonding assembly is responsible for generating high-frequency sinusoidal power signals, which are transmitted to the capillary assembly 13 through the transducer system. The transducer system is usually composed of piezoelectric ceramic materials, and its function is to convert the electrical signals generated by the ultrasonic generator into mechanical vibrations. These mechanical vibrations are amplified and converged during transmission and finally act on the bonding interface intensively. Due to the energy generated by the mechanical vibrations being concentrated in the bonding area, strong friction is generated between the lead 21 and the bonding surface. This friction can not only remove surface contaminants but also break the oxide film on the metal surface, exposing active metal atoms. On this basis, the temperature rise caused by the mechanical vibrations and the high-frequency energy make the metal atoms become in an activated state. When these activated metal atoms approach to a nanoscale distance, they form covalent bonds by sharing electrons, thus building an electron bridge between the atoms. This microscopic bonding mechanism ultimately realizes the reliable bonding between the lead 21 and the chip 33 or the lead terminal 341.

[0065] Optionally, the bonding assembly further includes a robotic arm, which is connected to the capillary assembly 13.

[0066] Specifically, the main function of the robotic arm is to control the movement of the capillary assembly 13 so that it can be accurately positioned between different bonding points. First, the robotic arm controls the capillary assembly 13 to guide the lead 21 to the first bonding point, that is, the bonding area between the lead 21 and the lead terminal 341. After completing the operation at the first bonding point, the robotic arm moves the capillary assembly 13 again to guide the lead 21 to the second bonding point, that is, the bonding area between the lead 21 and the chip 33. In order to ensure the smooth movement between the two bonding points, a certain arc height needs to be set during the process of guiding the lead 21, which can effectively avoid cracks in the lead neck 211 and ensure its electrical transmission.

[0067] As Figure 3 shown, the specific bonding process of the wire bonding device is as follows:

[0068] S01: Raise the support table 11 and limit the support table 11 at the maximum raised position;

[0069] S02: Paste the buffer pad 12 at the bonding station of the support table 11;

[0070] S03: Place the power module at the bonding station;

[0071] S04: Adjust the bonding parameters of the bonding assembly and start bonding the lead 21;

[0072] S05: Verify the firmness of the bonded lead 21 and inspect the quality of the bonding area.

[0073] Specifically, first, raise the support table 11 to the maximum raised position through the lifting mechanism. After reaching the maximum raised position, perform a limiting operation on the support table 11 through the limiting mechanism to ensure its stability during the bonding process. This operation ensures an appropriate distance between the power module and the bonding assembly, providing a fixed and accurate starting point for the subsequent bonding process.

[0074] Secondly, paste a layer of buffer pad 12 on the bonding station surface of the support table 11. The function of the buffer pad 12 is to absorb and mitigate the vibration and impact generated during the bonding process, protecting the power module from mechanical stress. Select a buffer pad 12 with an appropriate thickness and material according to the specific bonding requirements and the characteristics of the power module to ensure the best shock absorption effect during the bonding process.

[0075] Next, place the prepared power module on the bonding station of the support table 11. At this time, ensure that the power module is aligned with the buffer pad 12 and the bonding assembly to ensure the accurate position of the bonding points. The accuracy of this step is crucial for the subsequent bonding process to prevent bonding failures or quality problems caused by incorrect module positions.

[0076] Then, adjust various parameters of the bonding assembly, such as ultrasonic power, bonding force, and bonding time, to adapt to the current requirements of the lead 21 and the power module. After setting, start the bonding process. The bonding assembly will start the lead 21 bonding operation according to the set parameters, connecting the lead 21 to the bonding points of the power module through vibration and pressure. This process needs to be monitored by the control system to ensure that each bonding point can achieve the expected connection effect.

[0077] Finally, after completing the bonding operation, verify the firmness of the bonded lead 21 and inspect the quality of the bonding area. According to the inspection results, fine-tune the bonding parameters, such as adjusting the ultrasonic power, bonding force, and bonding time, to optimize the bonding effect. The purpose of this step is to continuously improve the product quality, ensure that each bonding point meets the standard requirements, and thus improve the stability and yield of the entire production process.

[0078] The above are only the preferred embodiments of the present application and are not used to limit the present application. For those skilled in the art, the present application can have various changes and modifications. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present application shall be included within the protection scope of the present application.

Claims

1. A wire bonding device, characterized in that: The invention comprises a supporting platform (11) and a bonding component which cooperate with each other, wherein the bonding component generates ultrasonic vibrations during the bonding process of a chip (33) of a power module, the supporting platform (11) has a bonding station for supporting the power module, a buffer pad (12) is arranged in the bonding station, and the buffer pad (12) is located between the supporting platform (11) and the power module and is used to buffer the ultrasonic vibrations generated by the bonding component.

2. The wire bonding device according to claim 1, characterized in that: The wire bonding device comprises a lifting mechanism, and the support platform (11) is connected to the lifting mechanism.

3. The wire bonding device according to claim 2, characterized in that: The wire bonding device comprises a limiting mechanism, and the support platform (11) is connected to the limiting mechanism to limit the maximum raised position of the support platform (11) after being raised by the lifting mechanism.

4. The wire bonding device according to any one of claims 1 to 3, characterized in that: A three-dimensional pattern structure is provided on at least one side surface of the buffer pad (12).

5. The wire bonding device according to any one of claims 1 to 3, characterized in that: The buffer pad (12) is a rubber pad.

6. The wire bonding device according to any one of claims 1 to 3, characterized in that: The thickness of the buffer pad (12) is 0.3 mm to 15 mm.

7. The wire bonding device according to any one of claims 1 to 3, characterized in that: The wire bonding device is suitable for wires (21) with a wire diameter of 0.1 mm to 15 mm.

8. The wire bonding device according to any one of claims 1 to 3, characterized in that: The bonding assembly comprises a splitting knife assembly (13) located above the support platform (11), and the splitting knife assembly (13) is used to guide the lead wire (21) to be bonded with the chip (33).

9. The wire bonding device according to claim 8, characterized in that: The bonding assembly also includes a mechanical arm, which is connected to the riving knife assembly (13).

10. The wire bonding device according to claim 8, characterized in that: The bonding assembly also includes an ultrasonic generator and a transducer system, and the ultrasonic generator is connected to the cleaver assembly (13) via the transducer system.

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