Light-emitting chip and light-emitting module

By setting a hollow structure at the corners of the epitaxial sheet of the Micro LED chip, the problem of sharp edges and corners after cutting is solved, and the yield and appearance of the chip are improved.

CN223007842UActive Publication Date: 2025-06-20SHENZHEN SITAN TECH CO LTD
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Patent Information

Application Number
CN202421885743.7
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-08-05
Publication Date
2025-06-20
Estimated Expiration
2034-08-05

AI Technical Summary

Technical Problem

In the Micro LED chip preparation process, the cutting grains are sharp in the corners, which easily cause impact and lead to waste sheets.

Method used

A light emitting chip is designed, with a plurality of corners on the outer periphery of the epitaxial sheet, and a hollow structure is provided at these corners. The hollow structure can be a folded line formed by inverted outer rounded corners, inverted inner rounded corners, inverted right angles or multiple oblique lines, and the angle between each oblique line is an obtuse angle.

Benefits of technology

By setting up a hollow structure, the probability of waste chips is reduced during the packaging and storage of the light-emitting chip, greatly improving the yield of the light-emitting chip, and reducing the size of the chip, making the appearance more beautiful.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses a light-emitting chip and a light-emitting module, and relates to the technical field of semiconductor chips. The light-emitting chip comprises an epitaxial wafer and a plurality of light-emitting units arranged on the epitaxial wafer, the outer periphery of the epitaxial wafer is provided with a plurality of corners, and the corners are provided with hollow structures. The light-emitting chip provided by the utility model is small in size and high in yield.
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Description

Technical Field

[0001] This application relates to the technical field of semiconductor chips, and particularly to a light-emitting chip and a light-emitting module. Background Art

[0002] With the progress of technology, the size specification of Micro LED (Micro light emitting diode) chips has been reduced to a size within 100 micrometers or even 50 micrometers, and the overall appearance size of the chips has also been reduced to less than 1 inch accordingly.

[0003] In the preparation process of Micro LED chips, single grains of the required size are formed by dicing and scribing. After dicing, the edges and corners of the grains are sharp and prone to impact, resulting in defective chips. Summary of the Utility Model

[0004] In view of this, this application provides a light-emitting chip and a light-emitting module, aiming to solve one of the technical problems in the prior art.

[0005] To achieve the above object, the technical solution adopted in this application is as follows:

[0006] In a first aspect, an embodiment of this application provides a light-emitting chip, including an epitaxial wafer and a plurality of light-emitting units disposed on the epitaxial wafer. The outer peripheral edge of the epitaxial wafer has a plurality of corners, and a hollow structure is provided at the corners.

[0007] In one of the embodiments of the first aspect, the hollow structure is formed by chamfering the outer corners at the corners of the epitaxial wafer.

[0008] In one of the embodiments of the first aspect, the hollow structure is formed by chamfering the inner corners at the corners of the epitaxial wafer.

[0009] In one of the embodiments of the first aspect, the hollow structure is formed by chamfering the right angles at the corners of the epitaxial wafer.

[0010] In one of the embodiments of the first aspect, the hollow structure is a broken line formed by connecting a plurality of oblique lines, the included angle between each oblique line is an obtuse angle, or the connection points of the plurality of oblique lines are in a circular arc transition.

[0011] In one of the embodiments of the first aspect, a transition angle is formed at the connection between the hollow structure and the corners.

[0012] In one embodiment of the first aspect, the outer peripheral edge of the epitaxial wafer is rectangular, the length of the epitaxial wafer is L1, the width is L2, the epitaxial wafer has a plurality of the corner portions, the size of the hollow structure in the length direction of the epitaxial wafer is D1, and the size in the width direction of the epitaxial wafer is D2, satisfying: 0.2 ≤ D1 / L1 ≤ 0.25; 0.25 ≤ D2 / L2 ≤ 0.3.

[0013] In one embodiment of the first aspect, the outer peripheral edge of the epitaxial wafer is rectangular, the length of the epitaxial wafer is L1, the width is L2, the epitaxial wafer has a plurality of the corner portions, the size of the hollow structure in the length direction of the epitaxial wafer is D1, and the size in the width direction of the epitaxial wafer is D2, satisfying: 0.15 ≤ D1 / L1 ≤ 0.2; 0.15 ≤ D2 / L2 ≤ 0.2.

[0014] In one embodiment of the first aspect, the outer peripheral edge of the epitaxial wafer is rectangular, the length of the epitaxial wafer is L1, the width is L2, the epitaxial wafer has a plurality of the corner portions, the size of the hollow structure in the length direction of the epitaxial wafer is D1, and the size in the width direction of the epitaxial wafer is D2, satisfying: 0.15 ≤ D1 / L1 ≤ 0.2; 0.2 ≤ D2 / L2 ≤ 0.25.

[0015] In a second aspect, an embodiment of the present application further provides a light-emitting module, including the light-emitting chip in any of the above embodiments.

[0016] Compared with the prior art, the beneficial effects of the present application are as follows: The present application provides a light-emitting chip, including an epitaxial wafer and a plurality of light-emitting units disposed on the epitaxial wafer. The outer peripheral edge of the epitaxial wafer has a plurality of corner portions, and a hollow structure is provided at the corner portions. By providing the hollow structure, the probability of waste chips caused during the packaging and storage of the light-emitting chip is reduced, the yield of the light-emitting chip is greatly improved, and in addition, the size of the light-emitting chip can be reduced, and the appearance is more beautiful. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings required in the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as limiting the scope. For those of ordinary skill in the art, without creative efforts, other related drawings can also be obtained based on these drawings.

[0018] Figure 1 Shows one of the structural schematic diagrams of the light-emitting chip in some embodiments of the present application;

[0019] Figure 2 Shows another structural schematic diagram of the light-emitting chip in some embodiments of the present application;

[0020] Figure 3 Shows the third schematic diagram of the structure of the light-emitting chip in some embodiments of the present application;

[0021] Figure 4 Shows the fourth schematic diagram of the structure of the light-emitting chip in some embodiments of the present application.

[0022] Main element symbol description: 100 - light-emitting chip; 110 - epitaxial wafer; 111 - corner; 120 - light-emitting unit. Detailed implementation manners

[0023] The embodiments of the present application will be described in detail below. The examples of the embodiments are shown in the drawings, where the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary and are only used to explain the present application, and should not be construed as a limitation to the present application.

[0024] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present application.

[0025] In addition, the terms "first" and "second" are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present application, "a plurality" means two or more unless otherwise specifically defined.

[0026] In the present application, unless otherwise clearly defined and limited, the terms "mounted", "connected", "connected to", "fixed", etc. should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the internal communication of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0027] In this application, unless otherwise clearly specified or limited, the first feature being "on" or "under" the second feature may be that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "over" and "on top of" the second feature may be that the first feature is directly above or obliquely above the second feature, or merely indicates that the horizontal height of the first feature is higher than that of the second feature. The first feature being "under", "beneath" and "underneath" the second feature may be that the first feature is directly below or obliquely below the second feature, or merely indicates that the horizontal height of the first feature is less than that of the second feature.

[0028] In the Micro LED chip manufacturing process, a single crystal grain of the required size is formed by cutting and dicing. After cutting, the edges and corners of the crystal grain are sharp and prone to impact, resulting in defective chips.

[0029] In view of the above problems, as Figure 1 shown, an embodiment of the present application provides a light-emitting chip 100, including an epitaxial wafer 110 and a plurality of light-emitting units 120 disposed on the epitaxial wafer 110. The outer peripheral edge of the epitaxial wafer 110 has a plurality of corners 111, and a hollow structure is provided at the corners 111. By providing the hollow structure, the probability of defective chips caused during the packaging and storage of the light-emitting chip 100 is reduced, greatly improving the yield of the light-emitting chip 100. In addition, the size of the light-emitting chip 100 can be reduced, and the appearance is more beautiful.

[0030] In some embodiments, as Figure 1 shown, the hollow structure is formed by chamfering the outer corners of the corners 111 of the epitaxial wafer 110.

[0031] Specifically, the hollow structure is a circular arc protruding in a direction away from the light-emitting unit 120. Figure 1 In, the outer circular structure of the corner 111 can also be used as a positioning and guiding protrusion to increase the structural strength of the light-emitting chip 100.

[0032] In some embodiments, as Figure 2 shown, the hollow structure is formed by chamfering the inner corners of the corners 111 of the epitaxial wafer 110.

[0033] Specifically, the hollow structure is a circular arc protruding in a direction towards the light-emitting unit 120. Figure 2 In, the inner circular structure of the corner 111 can also be used as a positioning and guiding groove to increase the structural strength of the light-emitting chip 100.

[0034] In some embodiments, as Figure 3 shown, the hollow structure is formed by chamfering the corners 111 of the epitaxial wafer 110 into right angles.

[0035] Specifically, the hollow structure is a slant line shape. Figure 3Among them, the linear structure of the corner portion 111 can also be used as a positioning and guiding protrusion to increase the structural strength of the light-emitting chip 100.

[0036] In some embodiments, such as Figure 4 shown, the hollow structure is a broken line formed by connecting multiple oblique lines, and the included angle between each oblique line is an obtuse angle. The number of oblique lines can be set according to requirements and there is no special limitation. Figure 4 Among them, the broken-line structure of the corner portion 111 can also be used as a positioning and guiding protrusion to increase the structural strength of the light-emitting chip 100.

[0037] In some embodiments, please refer to Figure 4 , the hollow structure is a broken line formed by connecting multiple oblique lines, and the included angle between each oblique line is an obtuse angle or the connection of multiple oblique lines is in a circular arc transition. The probability of defective chips caused during the packaging and storage of the light-emitting chip 100 is reduced, greatly improving the yield of the light-emitting chip 100 and making the appearance of the light-emitting chip 100 more beautiful.

[0038] In some embodiments, please refer to Figure 3 and Figure 4 , a transition angle α is formed at the connection between the hollow structure and the corner portion 111, satisfying: α≥120°. By setting the transition angle α, the probability of defective chips caused during the packaging and storage of the light-emitting chip 100 is reduced, greatly improving the yield of the light-emitting chip 100 and making the appearance of the light-emitting chip 100 more beautiful.

[0039] In some embodiments, please refer to Figure 1 , the outer peripheral edge of the epitaxial wafer 110 is rectangular, the length of the epitaxial wafer 110 is L1, the width is L2, the epitaxial wafer 110 has multiple corner portions 111, the size of the hollow structure in the length direction of the epitaxial wafer 110 is D1, and the size in the width direction of the epitaxial wafer 110 is D2, satisfying: 0.2≤D1 / L1≤0.25; 0.25≤D2 / L2≤0.3.

[0040] Exemplarily, when the hollow structure is a circular arc protruding in the direction away from the light-emitting unit 120, the radius size range of the hollow structure is between 0.2 - 0.8 mm. In this embodiment, the radius size of the hollow structure is 0.5 mm. In the length direction, D1 / L1 is 0.23; in the width direction, D2 / L2 is 0.27.

[0041] In some embodiments, please refer to Figure 2, the outer peripheral edge of the epitaxial wafer 110 is rectangular, the length of the epitaxial wafer 110 is L1, the width is L2, the epitaxial wafer 110 has a plurality of corner portions 111, the size of the hollow structure in the length direction of the epitaxial wafer 110 is D1, and the size in the width direction of the epitaxial wafer 110 is D2, satisfying: 0.15 ≤ D1 / L1 ≤ 0.2; 0.15 ≤ D2 / L2 ≤ 0.2.

[0042] Exemplarily, when the hollow structure is a circular arc convex toward the light-emitting unit 120, the radius dimension range of the hollow structure is between 0.2 - 0.8 mm. In this embodiment, the radius dimension of the hollow structure is 0.37 mm. In the length direction, D1 / L1 is 0.15; in the width direction, D2 / L2 is 0.18.

[0043] In some embodiments, please refer to Figure 3 , the outer peripheral edge of the epitaxial wafer 110 is rectangular, the length of the epitaxial wafer 110 is L1, the width is L2, the epitaxial wafer 110 has a plurality of corner portions 111, the size of the hollow structure in the length direction of the epitaxial wafer 110 is D1, and the size in the width direction of the epitaxial wafer 110 is D2, satisfying: 0.15 ≤ D1 / L1 ≤ 0.2; 0.2 ≤ D2 / L2 ≤ 0.25.

[0044] Exemplarily, when the hollow structure is a slanted line shape, the radius dimension of the hollow structure is 0.37 mm. In the length direction, D1 / L1 is 0.18; in the width direction, D2 / L2 is 0.21.

[0045] The manufacturing process of the light-emitting chip 100 of the present application is as follows:

[0046] Step S01: Fabricate a Micro LED chip and perform photolithography on the Micro LED chip to form a cutting line of the light-emitting chip 100 and a cutting line of the hollow structure of each light-emitting chip 100 on the Micro LED chip;

[0047] Step S02: Cut the Micro LED chip into individual light-emitting chips 100 according to the cutting line;

[0048] Step S03: Fix the individual light-emitting chips 100 on a jig and cut according to the cutting line of the hollow structure to obtain the light-emitting chips 100 with the target shape.

[0049] In the embodiment of the present application, a light-emitting module is further provided, including the light-emitting chip 100 in any of the above embodiments.

[0050] The light-emitting chip 100 or the light-emitting module provided by the present application can be applied not only to the projection part of electronic devices such as optical projection and HUD (Head-Up Display), but also to the display part of electronic devices. For example, the electronic device may include: any device with a display screen such as a smart phone, a smart watch, a laptop computer, a tablet computer, a driving recorder, a navigator, a head-mounted device, etc. It can also be applied to the lighting part of electronic devices. For example, the electronic device may include: any device with a lighting component such as a vehicle, a street lamp, etc.

[0051] The light-emitting chip 100 or the light-emitting module proposed by the present application is particularly suitable for the following electronic devices: projection devices for long-distance display, such as optical projection, etc.; application devices with requirements for display brightness, such as in-vehicle products such as window displays and HUDs that are usually used outdoors, and also such as aiming scopes and telescopes in the military industry, and also such as head-mounted devices such as AR glasses, ski goggles, swimming goggles, etc.

[0052] In the description of this specification, the description with reference to terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0053] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and should not be construed as limiting the present application. Those of ordinary skill in the art can make changes, modifications, substitutions, and variations to the above embodiments within the scope of the present application.

Claims

1. A light-emitting chip, characterized in that: The invention comprises an epitaxial wafer and a plurality of light-emitting units arranged on the epitaxial wafer. The outer periphery of the epitaxial wafer has a plurality of corners, and the corners are provided with hollow structures.

2. The light-emitting chip according to claim 1, characterized in that: The hollow structure is formed by chamfering the corners of the epitaxial wafer.

3. The light-emitting chip according to claim 1, characterized in that: The hollow structure is formed by chamfering the corners of the epitaxial wafer.

4. The light-emitting chip according to claim 1, characterized in that: The hollow structure is formed by chamfering the corners of the epitaxial wafer.

5. The light-emitting chip according to claim 1, characterized in that: The hollow structure is a broken line formed by connecting a plurality of oblique lines, the angles between the oblique lines are obtuse angles or the connection between the plurality of oblique lines is in an arc-shaped transition.

6. The light-emitting chip according to any one of claims 1 to 5, characterized in that: A transition angle is formed at the connection between the hollow structure and the corner portion.

7. The light-emitting chip according to claim 2, characterized in that: The outer periphery of the epitaxial wafer is rectangular, the length of the epitaxial wafer is L1, the width is L2, the epitaxial wafer has multiple corners, the size of the hollow structure in the length direction of the epitaxial wafer is D1, and the size in the width direction of the epitaxial wafer is D2, satisfying: 0.2≤D1 / L1≤0.25; 0.25≤D2 / L2≤0.

3.

8. The light emitting chip according to claim 3, characterized in that: The outer periphery of the epitaxial wafer is rectangular, the length of the epitaxial wafer is L1, the width is L2, the epitaxial wafer has multiple corners, the size of the hollow structure in the length direction of the epitaxial wafer is D1, and the size in the width direction of the epitaxial wafer is D2, satisfying: 0.15≤D1 / L1≤0.2; 0.15≤D2 / L2≤0.

2.

9. The light emitting chip according to claim 4, characterized in that: The outer periphery of the epitaxial wafer is rectangular, the length of the epitaxial wafer is L1, the width is L2, the epitaxial wafer has multiple corners, the size of the hollow structure in the length direction of the epitaxial wafer is D1, and the size in the width direction of the epitaxial wafer is D2, satisfying: 0.15≤D1 / L1≤0.2; 0.2≤D2 / L2≤0.

25.

10. A light emitting module, characterized in that: The light-emitting chip comprises the light-emitting chip according to any one of claims 1 to 9.