Temperature control gas mixing structure and semiconductor processing equipment

Abstract

The utility model provides a temperature control gas mixing structure and semiconductor processing equipment. The temperature control gas mixing structure comprises: a housing having an outer housing and an inner housing, the outer housing being provided with a temperature control agent inlet and a temperature control agent outlet, and a flow passage being arranged between the inner housing and the outer housing; the temperature control gas mixing rods are arranged between a gas inlet and a gas outlet of the temperature control gas mixing structure so as to disturb gas flow between the gas inlet and the gas outlet, each temperature control gas mixing rod is of a hollow structure, the first end of each temperature control gas mixing rod is connected with the first position, close to the temperature control agent inlet, in the flow passing channel, and the second end of each temperature control gas mixing rod is connected with the second position. And the second end of the temperature control valve is connected with a second position, close to the temperature control agent outlet, in the overflowing channel, so that the temperature control agent flows to the temperature control agent outlet from the temperature control agent inlet, and the temperature of the flowing airflow is adjusted.

Description

Technical Field

[0001] The utility model relates to the field of semiconductor processing, in particular to a temperature-controlled gas mixing structure and a semiconductor processing device. Background Art

[0002] In the process of thin film deposition, a variety of reaction gases are often used as deposition materials. These reaction gases enter the reaction chamber after being fully mixed. Here, the mixing efficiency and timing of the gases will directly affect the effect of thin film deposition. In the existing semiconductor gas inlet system, in the channels for simultaneous gas inlet, due to the requirement of equipment miniaturization, the space is usually small, which not only is not conducive to the rapid and full mixing of gases, but also cannot improve the gas mixing rate through external equipment, resulting in a series of problems such as poor consistency of the thickness of the deposited thin film on the wafer surface, low deposition rate, and particle generation.

[0003] In the existing semiconductor gas inlet system, the gas mixing device and the temperature control device for reaction gases are two separate parts, which require a large amount of equipment space. Therefore, it is even more impossible to improve the space of the gas inlet channel. This is not only not conducive to the miniaturization of the semiconductor processing equipment design, but also not conducive to improving the quality of thin film deposition.

[0004] In order to overcome the above-mentioned defects existing in the prior art, there is an urgent need in the art for a temperature-controlled gas mixing technology to fully mix the gases entering the reaction chamber and control the temperature of the mixed gases at the same time, so as to realize the miniaturization of semiconductor processing equipment and improve the quality of thin film deposition. Summary of the Utility Model

[0005] The following gives a brief overview of one or more aspects to provide a basic understanding of these aspects. This overview is not an exhaustive survey of all contemplated aspects, and is neither intended to identify key or decisive elements of all aspects nor to attempt to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that follows.

[0006] In order to overcome the above-mentioned defects existing in the prior art, the utility model provides a temperature-controlled gas mixing structure and a semiconductor processing device, which are used to fully mix the gases entering the reaction chamber and control the temperature of the mixed gases at the same time, so as to realize the miniaturization of semiconductor processing equipment and improve the quality of thin film deposition.

[0007] Specifically, the temperature-controlled gas mixing structure provided by the first aspect of the present utility model includes: a housing and multiple temperature-controlled gas mixing rods. The housing has an outer shell and an inner shell. A temperature control agent inlet and a temperature control agent outlet are provided on the outer shell, and a flow-through channel is provided between the inner shell and the outer shell. The multiple temperature-controlled gas mixing rods are arranged between the air inlet and the air outlet of the temperature-controlled gas mixing structure to disturb the air flow between the air inlet and the air outlet. The temperature-controlled gas mixing rod is of a hollow structure, with its first end connected to a first position in the flow-through channel close to the temperature control agent inlet, and its second end connected to a second position in the flow-through channel close to the temperature control agent outlet, for the temperature control agent to flow from the temperature control agent inlet to the temperature control agent outlet and adjust the temperature of the flowing air flow.

[0008] Further, in some embodiments of the present utility model, the multiple temperature-controlled gas mixing rods are divided into multiple layers. Each layer of the temperature-controlled gas mixing rods is parallel to each other, and each layer of the temperature-controlled gas mixing rods extends in different layout directions, and each of the layout directions is perpendicular to the air passing direction from the air inlet to the air outlet.

[0009] Further, in some embodiments of the present utility model, the layout directions of each layer of the temperature-controlled gas mixing rods are deflected in sequence at a preset angular interval in the clockwise or counterclockwise direction, so that the air flow flowing through each layer of the temperature-controlled gas mixing rods rotates in the corresponding direction.

[0010] Further, in some embodiments of the present utility model, a flow guiding structure pointing to the layout direction of the next layer of temperature-controlled gas mixing rods is further provided on each of the temperature-controlled gas mixing rods to promote the rotation of the air flow inside the inner shell.

[0011] Further, in some embodiments of the present utility model, the multiple temperature-controlled gas mixing rods are divided into at least six layers. The layout directions of each layer of the temperature-controlled gas mixing rods are deflected in sequence at a 60° angular interval in the clockwise or counterclockwise direction, so that the air flow flowing through each layer of the temperature-controlled gas mixing rods rotates in the corresponding direction, and the air flow flowing out from the air outlet rotates at least 360° around the inner shell.

[0012] Further, in some embodiments of the present utility model, the outer shell is made of a heat-insulating material. The inner shell is made of a heat-conducting material. A cavity surrounding the inner shell is maintained between the inner shell and the outer shell to serve as the flow-through channel.

[0013] Further, in some embodiments of the present utility model, the temperature control agent inlet is provided on the first side at the lower end of the outer shell. The temperature control agent outlet is provided on the second side at the upper end of the outer shell away from the first side.

[0014] Further, in some embodiments of the present utility model, the temperature-controlled gas mixing structure further includes a counter-jet zone and a plurality of intake pipes. The counter-jet zone is located between the gas inlet of the temperature-controlled gas mixing structure and the plurality of temperature-controlled gas mixing rods. The plurality of intake pipes are arranged at the gas inlet of the temperature-controlled gas mixing structure. The intake ends of each of the intake pipes are respectively connected to corresponding gas sources, and their outlet ends converge towards the counter-jet zone, so as to firstly conduct preliminary counter-jet mixing of the input gases of each of the gas sources in the counter-jet zone, and then conduct secondary mixing with temperature adjustment through the plurality of temperature-controlled gas mixing rods.

[0015] Further, in some embodiments of the present utility model, the temperature-controlled gas mixing structure further includes: a temperature control agent source for providing the temperature control agent; a temperature adjustment mechanism for adjusting the temperature control agent to a target temperature; and a temperature control agent pipeline that sequentially connects the temperature control agent outlet, the temperature control agent source, the temperature adjustment mechanism, and the temperature control agent inlet to conduct circulation of the temperature control agent.

[0016] In addition, the semiconductor processing equipment according to the second aspect of the present utility model includes a process chamber, at least one gas source, and the temperature-controlled gas mixing structure according to any one of the first aspect of the present utility model. The process chamber is used to accommodate a wafer to be processed and implement a processing process on it. The at least one gas source is used to provide process gases required for the processing process to the process chamber. The temperature-controlled gas mixing structure according to any one of the first aspect of the present utility model is arranged between the at least one gas source and the process chamber and is used to synchronously control the temperature and mix the process gases provided by the at least one gas source. Description of the Drawings

[0017] After reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings, the above features and advantages of the present utility model can be better understood. In the drawings, the components are not necessarily drawn to scale, and components with similar related characteristics or features may have the same or similar reference numerals.

[0018] Figure 1 A three-dimensional perspective view of a temperature-controlled gas mixing structure provided according to some embodiments of the present utility model is shown.

[0019] Figure 2 A three-dimensional semi-sectional structural schematic diagram of a temperature-controlled gas mixing structure provided according to some embodiments of the present utility model is shown.

[0020] Figure 3 A semi-sectional structural schematic diagram of a temperature-controlled gas mixing structure provided according to some embodiments of the present utility model is shown.

[0021] Figure 4 A top-down layout schematic diagram of temperature-controlled gas mixing rods provided according to some embodiments of the present utility model is shown.

[0022] Reference Numerals:

[0023] 10 Outer shell

[0024] 101 Temperature control agent inlet

[0025] 102 Temperature control agent outlet

[0026] 11 Inner shell

[0027] 12 Overcurrent channel

[0028] 131 Air inlet

[0029] 132 Air outlet

[0030] 14 Impact area

[0031] 15 Temperature control mixing rod Detailed Implementation Modes

[0032] The following specific embodiments illustrate the implementation modes of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention will be introduced in conjunction with preferred embodiments, this does not mean that the features of this invention are limited to this implementation mode. On the contrary, the purpose of introducing the invention in conjunction with the implementation mode is to cover other alternatives or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, many specific details will be included in the following description. The present invention can also be implemented without these details. In addition, in order to avoid confusing or obscuring the key points of the present invention, some specific details will be omitted in the description.

[0033] In the description of the present invention, it should be noted that unless otherwise clearly specified and defined, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

[0034] In addition, the "upper", "lower", "left", "right", "top", "bottom", "horizontal", and "vertical" used in the following description should be understood as the orientations shown in this section and the related drawings. This relative term is only for convenience of description, and it does not mean that the device described needs to be manufactured or operated in a specific orientation, so it should not be understood as a limitation to the present invention.

[0035] It is understood that although terms such as "first", "second", "third", etc. may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first component, region, layer, and / or part discussed below may be referred to as the second component, region, layer, and / or part without departing from some embodiments of the present invention.

[0036] As described above, multiple reaction gases are often used as deposition materials during the thin film deposition process. These multiple reaction gases are fully mixed and then enter the reaction chamber. Here, the mixing efficiency and timing of the gases will directly affect the effect of thin film deposition. In existing semiconductor gas inlet systems, in the channels for simultaneous gas inlet, due to the requirement of equipment miniaturization, the space is usually small, which not only is not conducive to the rapid and full mixing of gases, but also cannot improve the gas mixing rate through external equipment, resulting in a series of problems such as poor consistency of the thickness of the deposited thin film on the wafer surface, low deposition rate, and particle generation.

[0037] In existing semiconductor gas inlet systems, the reaction gas mixing device and the temperature control device are two separate parts, which require a large amount of equipment space. Therefore, it is even more impossible to expand and improve the space of the gas inlet channel, which is not only not conducive to the miniaturization design of semiconductor processing equipment, but also not conducive to improving the quality of thin film deposition.

[0038] In order to overcome the above-mentioned defects existing in the prior art, the present invention provides a temperature-controlled gas mixing structure and a semiconductor processing device, which are used to fully mix the gases entering the reaction chamber and control the temperature of the mixed gases at the same time, so as to realize the miniaturization of semiconductor processing equipment and improve the quality of thin film deposition.

[0039] In some non-limiting embodiments, the semiconductor processing device provided in the second aspect of the present invention includes a process chamber, at least one gas source, and the temperature-controlled gas mixing structure provided in the first aspect of the present invention.

[0040] Furthermore, the process chamber of the semiconductor processing device is used to accommodate the wafer to be processed and implement the processing process on it. The at least one gas source is used to provide the process gas required for the processing process to the process chamber. The temperature-controlled gas mixing structure is arranged between the at least one gas source and the process chamber, and is used to synchronously control the temperature and mix the process gas provided by the at least one gas source.

[0041] Please refer to Figures 1 to 3 , Figure 1 which shows a three-dimensional perspective view of the temperature-controlled gas mixing structure provided in some embodiments of the present invention. Figure 2A three-dimensional half-section structural schematic diagram of a temperature-controlled gas mixing structure provided according to some embodiments of the utility model is shown. Figure 3 A half-section schematic diagram of a temperature-controlled gas mixing structure provided according to some embodiments of the utility model is shown.

[0042] like Figures 1 to 3 As shown, the temperature-controlled gas mixing structure includes a shell, a plurality of temperature-controlled gas mixing rods 15 and a plurality of air inlet pipes. The shell has an outer shell 10 and an inner shell 11, wherein the outer shell 10 is provided with a temperature control agent inlet 101 and a temperature control agent outlet 102, and a flow passage 12 is provided between the inner shell 11 and the outer shell 10. The plurality of temperature-controlled gas mixing rods 15 are arranged between the air inlet 131 and the air outlet 132 of the temperature-controlled gas mixing structure to disturb the air flow between the air inlet 131 and the air outlet 132. The plurality of air inlet pipes 13 are arranged at the air inlet 131 of the temperature-controlled gas mixing structure, and the number of the plurality of air inlet pipes can be selected according to the number of reaction sources. A counter-flow zone 14 is provided between the air inlet 131 of the temperature-controlled gas mixing structure and the plurality of temperature-controlled gas mixing rods 15.

[0043] Furthermore, in some non-limiting embodiments, the air inlet ends of each air inlet pipe are respectively connected to the corresponding air source, and the air outlet ends thereof converge toward the counter-pressure zone 14, so that the input gases of each air source are first preliminarily counter-mixed in the counter-pressure zone 14, and then subjected to secondary mixing for temperature regulation through multiple temperature-controlled mixing rods 15.

[0044] Furthermore, in some non-limiting embodiments, the temperature-controlled mixing rod 15 is a hollow structure, a first end of which is connected to a first position in the flow channel 12 near the temperature control agent inlet 101, and a second end of which is connected to a second position in the flow channel 12 near the temperature control agent outlet 102, so that the temperature control agent can flow from the temperature control agent inlet 101 to the temperature control agent outlet 102 and adjust the temperature of the gas flow passing therethrough. Since the hollow structure of each rod is connected to the side wall, it can be ensured that the temperature of the temperature control agent can be controlled before the gas enters the semiconductor process chamber.

[0045] Preferably, the mixing rod has a square outer cross-section and a circular inner cross-section, the side length of the outer cross-section is 2 mm, and the radius of the inner cross-section is 0.5 mm.

[0046] Furthermore, in some non-limiting embodiments, the plurality of temperature-controlled gas mixing rods 15 are divided into multiple layers, and the number of layers can be reasonably selected according to the number of gas types and the time required for gas mixing to improve the gas mixing effect. Here, each layer of temperature-controlled gas mixing rods 15 is parallel to each other, and each layer of temperature-controlled gas mixing rods 15 extends in a different layout direction, and each layout direction is perpendicular to the gas flow direction from the gas inlet 131 to the gas outlet 132, so as to increase the gas mixing rate and uniformity.

[0047] Optionally, in some non-limiting embodiments, a flow guiding structure (such as a spoiler structure) pointing to the layout direction of the next layer of temperature control mixing rods 15 is further provided on each temperature control mixing rod 15 to promote the rotation of the air flow inside the inner shell 11.

[0048] Please refer to Figure 4 , Figure 4 which shows a top view schematic diagram of the layout of the temperature control mixing rods provided according to some embodiments of the present invention.

[0049] As Figure 4 shown, the layout directions of the temperature control mixing rods 15 of each layer are deflected in sequence along the clockwise or counterclockwise direction at a preset angular interval, so that the air flow flowing through each layer of temperature control mixing rods 15 rotates in the corresponding direction.

[0050] Furthermore, in some non-limiting embodiments, multiple temperature control mixing rods 15 are divided into at least six layers. Among them, the layout directions of the temperature control mixing rods 15 of each layer are deflected in sequence along the clockwise or counterclockwise direction at a 60° angular interval, so that the air flow flowing through each layer of temperature control mixing rods 15 rotates in the corresponding direction, and the air flow flowing out from the air outlet 132 rotates at least 360° around the inner shell 11.

[0051] In addition, in some non-limiting embodiments, the temperature control mixing structure further includes a temperature control agent source, a temperature adjustment mechanism, and a temperature control agent pipeline. The temperature control agent source is used to provide a temperature control agent. The temperature adjustment mechanism is used to adjust the temperature control agent to a target temperature. The temperature control agent pipeline is sequentially connected to the temperature control agent outlet 102, the temperature control agent source, the temperature adjustment mechanism, and the temperature control agent inlet 101 to perform the circulating flow of the temperature control agent. Thus, the temperature control of the gas can be further improved by bypassing the device, so as to avoid phenomena such as the generation of a fluoride layer on the surface of the spray head at high temperatures.

[0052] Those skilled in the art can understand that these embodiments of the temperature control mixing structure are only a non-limiting implementation manner provided by the present invention, aiming to clearly show the main concept of the present invention and provide a preferred solution that can realize the miniaturization of semiconductor processing equipment and improve the quality of thin film deposition, rather than limiting the scope of structural protection of the present invention.

[0053] Optionally, in some non-limiting embodiments, the outer shell 10 is made of a heat-insulating material, and the inner shell 11 is made of a heat-conducting material, so as to further adjust the air flow temperature by using the inner shell. A cavity surrounding the inner shell 11 is maintained between the inner shell 11 and the outer shell 10 to serve as the flow-through channel 12.

[0054] Optionally, in some non-limiting embodiments, the temperature control agent inlet 101 is provided on the first side at the lower end of the outer shell 10, and the temperature control agent outlet 102 is provided on the second side at the upper end of the outer shell 10 away from the first side, which is convenient for the full contact between the inner shell 11 and the temperature control agent, avoiding the mixing of air, so as to improve the heat exchange efficiency and the temperature uniformity of the temperature control agent.

[0055] In summary, the temperature control gas mixing structure and the semiconductor processing equipment provided by the present utility model enable multiple paths of gases to reach the gas mixing area through the air inlet of the temperature control gas mixing structure at the same time, and after being fully mixed, continue to enter the process chamber of the semiconductor equipment through the air outlet of the temperature control gas mixing structure. Thus, the temperature control gas mixing structure can be used to fully mix the gases entering the reaction chamber while controlling the temperature of the mixed gas, so as to realize the miniaturization of the semiconductor processing equipment and improve the quality of film deposition.

[0056] Although the above method is illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions not illustrated and described herein but understood by those skilled in the art.

[0057] The previous description of the present disclosure is provided to enable any person skilled in the art to make or use the present disclosure. Various modifications to the present disclosure will be apparent to those skilled in the art, and the general principles defined herein can be applied to other variations without departing from the spirit or scope of the present disclosure. Thus, the present disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A temperature-controlled gas mixing structure, characterized in that: include: A housing, comprising an outer shell and an inner shell, wherein the outer shell is provided with a temperature control agent inlet and a temperature control agent outlet, and a flow passage is provided between the inner shell and the outer shell; and A plurality of temperature-controlled mixing rods are arranged between the air inlet and the air outlet of the temperature-controlled mixing structure to disturb the airflow between the air inlet and the air outlet, wherein the temperature-controlled mixing rod is a hollow structure, a first end of which is connected to a first position in the flow channel close to the temperature control agent inlet, and a second end of which is connected to a second position in the flow channel close to the temperature control agent outlet, so that the temperature control agent can flow from the temperature control agent inlet to the temperature control agent outlet and adjust the temperature of the airflow passing therethrough.

2. The temperature control gas mixing structure according to claim 1, characterized in that: The multiple temperature-controlled mixing rods are divided into multiple layers, wherein the temperature-controlled mixing rods in each layer are parallel to each other, and the temperature-controlled mixing rods in each layer extend in different layout directions, and each layout direction is perpendicular to the air flow direction from the air inlet to the air outlet.

3. The temperature control gas mixing structure according to claim 2, characterized in that: The arrangement direction of the temperature-controlled air mixing rods in each layer is deflected in a clockwise or counterclockwise direction in sequence according to a preset angle interval, so that the airflow flowing through the temperature-controlled air mixing rods in each layer rotates in a corresponding direction.

4. The temperature control gas mixing structure according to claim 3, characterized in that: Each of the temperature-controlled air mixing rods is also provided with a flow-guiding structure pointing to the layout direction of the temperature-controlled air mixing rods of the next layer, so as to promote the rotation of the airflow inside the inner shell.

5. The temperature control gas mixing structure according to claim 3, characterized in that: The multiple temperature-controlled mixing rods are divided into at least six layers, wherein the arrangement direction of the temperature-controlled mixing rods in each layer is at an angle interval of 60°, and is deflected in a clockwise or counterclockwise direction in sequence, so that the airflow flowing through the temperature-controlled mixing rods in each layer rotates in a corresponding direction, and the airflow flowing out of the air outlet completes at least a 360° rotation around the inner shell.

6. The temperature control gas mixing structure according to claim 1, characterized in that: The outer shell is made of heat insulating material, the inner shell is made of heat conducting material, and a cavity surrounding the inner shell is maintained between the inner shell and the outer shell to serve as the flow passage.

7. The temperature control gas mixing structure according to claim 6, characterized in that: The temperature control agent inlet is arranged at a first side of the lower end of the shell, and the temperature control agent outlet is arranged at a second side of the upper end of the shell away from the first side.

8. The temperature control gas mixing structure according to claim 1, characterized in that: Also includes: A counter-attack area, located between the air inlet of the temperature-controlled air-mixing structure and the plurality of temperature-controlled air-mixing rods; as well as A plurality of air inlet pipes are arranged at the air inlet of the temperature-controlled mixing structure, wherein the air inlet end of each air inlet pipe is respectively connected to a corresponding air source, and the air outlet end thereof converges toward the counter-pressure zone, so as to first perform preliminary counter-pressure mixing on the input gas of each air source in the counter-pressure zone, and then perform secondary mixing for temperature adjustment through the plurality of temperature-controlled mixing rods.

9. The temperature control gas mixing structure according to claim 1, characterized in that: Also includes: A temperature control agent source, used to provide the temperature control agent; a temperature regulating mechanism, for regulating the temperature-control agent to a target temperature; and The temperature control agent pipeline is sequentially connected to the temperature control agent outlet, the temperature control agent source, the temperature adjustment mechanism and the temperature control agent inlet to circulate the temperature control agent.

10. A semiconductor processing equipment, characterized in that: include: A process chamber is used to accommodate wafers to be processed and perform processing on them; at least one gas source, for providing the process chamber with process gas required for the processing process; as well as The temperature-controlled gas mixing structure according to any one of claims 1 to 9 is arranged between the at least one gas source and the process chamber, and is used for synchronously controlling the temperature and mixing the process gas provided by the at least one gas source.

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