Electroplating machine for wafer electroplating
By designing an electric field shielding ring and an electroplating shielding ring in a wafer plating machine, the electric field in the plating cavity is controlled, and the problem of uneven thickness of the electroplating layer is solved, which significantly improves the plating quality and yield.
Patent Information
- Application Number
- CN202420170015.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-01-24
- Publication Date
- 2025-06-24
- Estimated Expiration
- 2034-01-24
AI Technical Summary
The existing wafer plating machine structure leads to uneven thickness of the electroplating layer, affecting the quality and yield of the semiconductor finished product.
An electroplating machine for wafer electroplating is designed, including an electroplating accessories carrier, an electric field shielding ring, an electroplating solution ion exchange film and an electroplating shielding ring in sequence in the main body of the electroplating chamber. Through the design of the electric field shielding ring and the electroplating shielding ring, the electric field in the electroplating chamber is controlled, thereby improving the thickness uniformity of the electroplating layer.
It effectively improves the thickness uniformity of the electroplating layer during wafer electroplating, improves the plating quality and product yield rate. The overall uniformity of the wafer tin silver bumps is increased by 5%, and the final product yield rate reaches 100%.
Smart Images
Figure CN223017010U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the technical field of semiconductor production, and particularly relates to an electroplating machine for wafer electroplating. Background Art
[0002] A wafer electroplating machine is a device used to apply metal or non-metal coatings on the surface of wafers, mainly used in semiconductor production. Through the electrolytic deposition process, a thin film of metal or other materials is formed on the surface of the wafer, and these thin films can play multiple roles such as anti-corrosion, anti-oxidation, enhancing conductivity, and improving optoelectronic properties.
[0003] The wafer electroplating machine can modify the materials on the surface of the wafer to improve the performance and reliability of the chip. In modern integrated circuit production, the wafer electroplating machine is one of the key manufacturing tools because it can improve the performance of semiconductor chips and expand the manufacturing of transistors. The wafer electroplating machine can also play an important role in the research and production of nanomaterials, new batteries, solar cells, displays, photosensitive devices, and optoelectronic devices.
[0004] In practical applications, due to the limitations of the structure of the existing wafer electroplating machine, the uniformity of the same electroplated wafer is inconsistent, which affects the quality of the final semiconductor product and the yield is not high. Summary of the Utility Model
[0005] In order to solve the deficiencies of the existing technology, the utility model provides an electroplating machine for wafer electroplating, which can achieve the uniformity of the thickness of the electroplated wafer film, thereby improving the yield of the final product.
[0006] The purpose of the utility model is achieved through the following technical solutions:
[0007] An electroplating machine for wafer electroplating includes an electroplating chamber main body. Inside the electroplating chamber main body, an electroplating accessory carrier, an electric field shielding ring, an electroplating solution ion exchange membrane, and an electroplating shielding ring arranged above the electroplating solution ion exchange membrane are sequentially provided from bottom to top; a shielding block protrudes inward from the electroplating shielding ring.
[0008] Preferably, the cross-section of the shielding block is rectangular.
[0009] Preferably, the length of the shielding block is equivalent to the length of the wafer ID area, and the width of the shielding block is equivalent to the width of the effective area of the wafer from the wafer edge.
[0010] Preferably, there are two electric field shielding rings, which are stacked on top of each other.
[0011] Preferably, a group of electric field shielding blocks are symmetrically protruded inward from the electric field shielding ring.
[0012] Preferably, the projection length of the electric field shielding block is 1 / 300 - 1 / 150 of the diameter of the electric field shielding ring, and the angle between the bottom of the electric field shielding block and the horizontal plane is 1 / 2 of the angle at the distal end of the electric field shielding block.
[0013] Preferably, a sealing ring is provided between the electroplating solution ion exchange membrane and the electric field shielding ring.
[0014] The beneficial effects of the present utility model are as follows: The electroplating machine of the present utility model can effectively improve the thickness non-uniformity of the electroplated layer during wafer electroplating and enhance the electroplating quality. At the same time, it can also effectively improve the overall uniformity of the wafer tin-silver bumps and increase the product yield. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings required for the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are some embodiments of the present utility model. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.
[0016] Figure 1 : Structural schematic diagram of the present utility model. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0017] The present utility model discloses an electroplating machine for wafer electroplating. As shown in Figure 1 , it includes an electroplating chamber main body. Inside the electroplating chamber main body, an electroplating accessory carrier 1, an electric field shielding ring, an electroplating solution ion exchange membrane 5, and an electroplating shielding ring 6 arranged above the electroplating solution ion exchange membrane 5 are sequentially provided from bottom to top. A sealing ring is provided between the electroplating solution ion exchange membrane 5 and the electric field shielding ring. In this embodiment, there are two electric field shielding rings, namely a first electric field shielding ring 2 and a second electric field shielding ring 3 stacked above the first electric field shielding ring 2.
[0018] In order to further improve the thickness uniformity of the wafer electroplating film, the electroplating shielding ring 6 extends inward and protrudes with a shielding block 61. Through the shielding block 61, the principle is that by using the program rotation speed and controlling the shielding angle, the electroplating shielding block can effectively control the electric field at the wafer opening, thereby improving the thickness uniformity of the wafer electroplating. In this embodiment, the cross-section of the shielding block 61 is rectangular. The length of the shielding block 61 is equivalent to the length of the wafer ID area, and the width of the shielding block is equivalent to the width of the wafer effective area from the wafer edge.
[0019] The applicant has found that in the prior art, due to the overly good current field exchange efficiency at the edge of the wafer, it is instead easy to cause poor uniformity of the electroplated tin-silver bumps on the wafer. To control the electric field within the electroplating chamber main body, a set of electric field shielding blocks 23 are symmetrically arranged on the electric field shielding ring and protrude inward and extend. Thus, the electric field at the edge of the wafer is controlled to improve the overall uniformity of the electroplated tin-silver bumps on the wafer.
[0020] The projected length of the electric field shielding block is 1 / 300 - 1 / 150 of the diameter of the electric field shielding ring, and the angle between the bottom of the electric field shielding block and the horizontal plane is 1 / 2 of the angle at the distal end of the electric field shielding block.
[0021] After improvement, the overall uniformity of the tin-silver bumps on the wafer has been increased by 5%, and the yield rate of the final product is as high as 100%.
[0022] Finally, it should be noted that: Terms such as "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. appearing in the text indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings. This is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus cannot be construed as a limitation to the present invention. In addition, the terms "first", "second", "third" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance.
[0023] Moreover, the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit it; Although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: They can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements for some of the technical features; And these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the various embodiments of the present invention.
Claims
1. An electroplating machine for wafer electroplating, characterized in that: It includes an electroplating chamber body, in which an electroplating accessory carrier, an electric field shielding ring, an electroplating liquid ion exchange membrane and an electroplating shielding ring arranged above the electroplating liquid ion exchange membrane are arranged in sequence from bottom to top; the electroplating shielding ring extends inward and protrudes to provide a shielding block.
2. The electroplating machine for wafer electroplating as claimed in claim 1, characterized in that: The shielding block has a rectangular cross section.
3. The electroplating machine for wafer electroplating as claimed in claim 2, characterized in that: The length of the shielding block is equal to the length of the wafer ID region, and the width of the shielding block is equal to the width of the effective area of the wafer from the edge of the wafer.
4. The electroplating machine for wafer electroplating as claimed in claim 3, characterized in that: There are two electric field shielding rings, which are stacked up and down respectively.
5. The electroplating machine for wafer electroplating as claimed in claim 4, characterized in that: A group of electric field shielding blocks are symmetrically arranged on the electric field shielding ring, protruding and extending inward.
6. The electroplating machine for wafer electroplating as claimed in claim 5, characterized in that: The projection length of the electric field shielding block is 1 / 300-1 / 150 of the diameter of the electric field shielding ring, and the angle between the bottom of the electric field shielding block and the horizontal plane is 1 / 2 of the angle of the far end of the electric field shielding block.
7. The electroplating machine for wafer electroplating as claimed in claim 5, characterized in that: A sealing ring is arranged between the electroplating liquid ion exchange membrane and the electric field shielding ring.