Silicon material re-feeding device for single crystal furnace

Abstract

The utility model relates to the technical field of single crystal furnace production equipment, and provides a single crystal furnace silicon material re-feeding device, which comprises a base used for supporting other components; the hopper is fixedly mounted on the base, and a first telescopic pipe is arranged at the bottom of the hopper and used for conveying silicon materials in the hopper; the pushing mechanism is fixedly mounted on the base and is opposite to the first telescopic pipe, and the working end of the pushing mechanism extends into the first telescopic pipe to push the silicon material; wherein one end, far away from the pushing mechanism, of the first telescopic pipe is hermetically connected with a second telescopic pipe through a damping hinge, and the second telescopic pipe is communicated with the first telescopic pipe so as to receive a silicon material and put the silicon material into a quartz crucible in the single crystal furnace. The silicon material is mechanically re-fed into the single crystal furnace through stretching and retracting of the first telescopic pipe and the second telescopic pipe and back-and-forth action of the working end of the material pushing mechanism, the time of the silicon material in a high-temperature environment in the furnace can be shortened, the surface of the small-particle-size silicon material cannot be melted, and therefore the situation that the silicon material cannot be re-fed due to adhesion is effectively avoided; and the feeding speed is high, and the safety is high.

Description

Technical Field

[0001] The utility model relates to the technical field of single crystal furnace production equipment, and particularly relates to a silicon material refeeding device for a single crystal furnace. Background Art

[0002] A single crystal furnace is the main equipment for producing single crystal silicon rods. During the process of producing single crystal silicon rods, the loading amount of silicon material added into the single crystal furnace each time is limited. Therefore, in order to extend the single crystal growth time to improve production capacity and reduce costs, it is necessary to refeed the silicon material into the single crystal furnace.

[0003] Currently, most single crystal furnaces use a hanging feeder for refeeding. The hanging feeder has the following problems:

[0004] 1. During the descent of the feeder, some small particle size silicon materials in the loaded silicon material will be melted due to being in the high temperature environment in the furnace for a long time and adhere and agglomerate with other unmelted silicon materials, resulting in the silicon material in the feeder being unable to be put into the furnace, thus affecting refeeding;

[0005] 2. The feeding speed is slow, and it takes two ascents and two descents to complete one refeeding;

[0006] 3. The feeder is relatively close to the seed crystal rope. When operating, if a person is not careful, they will touch the seed crystal rope, causing the seed crystal rope to come out of the wire groove, which has a certain safety hazard;

[0007] 4. The prepared material amount for refeeding is inconsistent with the required amount. If the silicon material is lower than the required amount, the crystal rod cannot grow to the required length. If the silicon material is higher than the required amount, the molten liquid will overflow from the quartz crucible. Content of the Utility Model

[0008] Aiming at the deficiencies of the prior art, the utility model provides a silicon material refeeding device for a single crystal furnace to solve the problems of silicon material melting and adhesion, slow feeding speed, easy influence on the seed crystal rope, and inconsistent prepared material amount for refeeding and required amount in the prior art of the hanging feeder.

[0009] To achieve the above object, the utility model provides the following technical solutions:

[0010] A silicon material refeeding device for a single crystal furnace, comprising:

[0011] A base for supporting other components;

[0012] A hopper fixedly installed on the base, and a first telescopic pipe is provided at the bottom thereof for conveying the silicon material in the hopper; and

[0013] A pushing mechanism fixedly installed on the base and facing the first telescopic pipe, and its working end extends into the first telescopic pipe to push the silicon material;

[0014] The end of the first telescopic tube away from the material pushing mechanism is sealed and connected to the second telescopic tube through a damping hinge, and the second telescopic tube is connected to the first telescopic tube to receive the silicon material and put it into the quartz crucible in the single crystal furnace.

[0015] In one embodiment disclosed in the present application, the pusher mechanism includes a driver, a pusher rod and a pusher connected in sequence;

[0016] The driver is fixedly mounted on the base;

[0017] The push rod can move back and forth along the length direction of the first telescopic tube under the drive of the driver;

[0018] The pusher can be expanded to push the silicon material when the push rod extends into the first telescopic tube, and can be retracted to avoid the silicon material when the push rod exits the first telescopic tube.

[0019] In one embodiment disclosed in the present application, a weighing device is provided outside the hopper;

[0020] The weigher is located above the first telescopic tube and is used to weigh the amount of silicon material remaining in the hopper in real time.

[0021] In one embodiment disclosed in the present application, a control panel with a display screen is provided on the side of the base;

[0022] The control panel is electrically connected to the weighing device to control the latter to perform weighing operation;

[0023] The display screen is used to display the prepared material quantity and the remaining silicon material quantity in the hopper.

[0024] In one embodiment disclosed in the present application, a vacuum pump is installed inside the base;

[0025] The vacuum pump is connected to the sealing cover on the top of the hopper through a pipeline;

[0026] A program-controlled valve is installed on the pipeline;

[0027] The program-controlled valve is electrically connected to the control panel.

[0028] In one embodiment disclosed in the present application, a vacuum gauge electrically connected to the control panel is also installed inside the base for measuring the vacuum degree inside the hopper, and the vacuum degree can be displayed on the display screen.

[0029] In one embodiment disclosed in the present application, walking wheels are installed under the base to realize the movement of the re-investment device.

[0030] In an embodiment disclosed in the present application, there are 4 walking wheels, which are respectively installed at the four corners of the bottom surface of the base;

[0031] The 4 walking wheels are divided into two pairs. One pair of the walking wheels is a fixed wheel, and the other pair of the walking wheels is a universal wheel.

[0032] Compared with the prior art, the beneficial effects of the present utility model are as follows:

[0033] 1. The silicon material is mechanically recharged into the single crystal furnace through the telescoping of the first telescopic tube and the second telescopic tube and the reciprocating movement of the working end of the feeding mechanism. First of all, the time for the silicon material to be in the high-temperature environment inside the furnace can be reduced, and the surface of the small-particle-size silicon material will not melt, thus effectively avoiding the situation where the silicon material adheres and cannot be recharged. Secondly, the recharging of the silicon material can be completed without repeated lifting and lowering many times, and the feeding speed is fast. Thirdly, the recharging operation is carried out by an independent device from the side auxiliary chamber viewing mirror of the single crystal furnace, which will not affect other components of the furnace body and has high safety.

[0034] 2. By weighing the remaining silicon material in the hopper in real time through the weighing device, the usage amount of the silicon material recharged can be fed back in time, so as to ensure the consistency between the prepared amount of the recharged silicon material and the required amount, and prevent abnormal events such as overfeeding or underfeeding.

[0035] 3. By performing a vacuum pumping operation on the inside of the hopper through the vacuum pump, the pressure inside the hopper is kept consistent with the pressure inside the single crystal furnace, so as to avoid external oxygen from entering the single crystal furnace during the recharging process of the silicon material, and thus effectively prevent the melt in the quartz crucible from being oxidized.

[0036] 4. Through the walking wheels, the present recharging device can be moved to any single crystal furnace that needs recharging, improving the application range of the present recharging device. Therefore, it is not necessary to configure a set of recharging equipment for each single crystal furnace separately, saving the equipment investment cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the following drawings are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0038] Figure 1 It is a schematic structural diagram of the present utility model. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0039] In the following text, only some exemplary embodiments are briefly described. As those skilled in the art can recognize, the described embodiments can be modified in various different ways without departing from the spirit or scope of the present invention. Therefore, the drawings and the description are considered to be exemplary in nature rather than restrictive.

[0040] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation of the present invention.

[0041] In addition, the terms "first" and "second" are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, "a plurality of" means two or more unless otherwise specifically defined.

[0042] In the present invention, unless otherwise clearly specified and limited, the terms "mounted", "connected", "connected to", "fixed", etc. should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be directly connected or indirectly connected through an intermediate medium, and it may be the internal communication of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0043] In the present invention, unless otherwise clearly specified and limited, the first feature being "above" or "below" the second feature may include the direct contact between the first and second features, or may include the situation where the first and second features are not in direct contact but in contact through other features therebetween. Moreover, the first feature being "above", "over" and "on" the second feature includes that the first feature is directly above and obliquely above the second feature, or merely means that the horizontal height of the first feature is higher than that of the second feature. The first feature being "below", "under" and "beneath" the second feature includes that the first feature is directly below and obliquely below the second feature, or merely means that the horizontal height of the first feature is lower than that of the second feature.

[0044] The following disclosure provides many different embodiments or examples for implementing different structures of the present utility model. To simplify the disclosure of the present utility model, components and settings of specific examples are described below. Of course, they are only examples and are not intended to limit the present utility model.

[0045] The embodiments of the present utility model will be described in detail below with reference to the accompanying drawings.

[0046] See Figure 1 As shown, the present utility model provides a device for refeeding silicon material in a single crystal furnace, including:

[0047] A base 10 for supporting other components;

[0048] A hopper 20 fixedly installed on the base 10, and a first telescopic pipe 21 is provided at its bottom for conveying the silicon material in the hopper 20; and

[0049] A material pushing mechanism 30 fixedly installed on the base 10 and facing the first telescopic pipe 21, and its working end extends into the first telescopic pipe 21 to push the silicon material;

[0050] Wherein, one end of the first telescopic pipe 21 away from the material pushing mechanism 30 is hermetically connected with a second telescopic pipe 22 through a damping hinge, and the second telescopic pipe 22 is communicated with the first telescopic pipe 21 to receive the silicon material and put it into the quartz crucible in the single crystal furnace.

[0051] During operation, rotate the second telescopic pipe 22 to be straight with the first telescopic pipe 21, then the first telescopic pipe 21 extends so that the second telescopic pipe 22 extends into the single crystal furnace from the sight glass of the auxiliary chamber of the single crystal furnace (not shown in the figure), and then rotate the second telescopic pipe 22 so that its pipe orifice is vertically downward, the second telescopic pipe 22 extends to above the molten liquid in the quartz crucible, and a part of the pipe body of the first telescopic pipe 21 remains outside the single crystal furnace and is connected to the sight glass of the auxiliary chamber of the single crystal furnace through a flange; at this time, the working end of the material pushing mechanism 30 moves back and forth to push the silicon material falling into the first telescopic pipe 21 from the hopper 20 towards the second telescopic pipe 22, and the silicon material is put into the quartz crucible through the second telescopic pipe 22; when the silicon material completes one refeeding, remove the flange to disconnect the connection between the first telescopic pipe 21 and the sight glass of the auxiliary chamber of the single crystal furnace, the second telescopic pipe 22 shortens and rotates back to be straight with the first telescopic pipe 21, and the first telescopic pipe 21 shortens to move the second telescopic pipe 22 out of the single crystal furnace. That is to say, through the telescoping of the first telescopic pipe 21 and the second telescopic pipe 22 and the back-and-forth movement of the working end of the material pushing mechanism 30, the silicon material is mechanically re-fed into the single crystal furnace. First, it can reduce the time for the silicon material to be in the high-temperature environment in the furnace, and the surface of the small-particle-size silicon material will not melt, thus effectively avoiding the situation where the silicon material adheres and cannot be re-fed; second, the re-feeding of the silicon material can be completed without repeated lifting and lowering many times, and the feeding speed is fast; third, the re-feeding operation is carried out by an independent device from the sight glass of the auxiliary chamber on the side of the single crystal furnace, which will not affect other components of the furnace body and has high safety.

[0052] The pusher mechanism 30 includes a driver 31, a pusher rod 32, and a pusher 33 that are connected in sequence. The driver 31 is fixedly installed on the base 10. The pusher rod 32 can move back and forth along the length direction of the first telescopic tube 21 under the drive of the driver 31. The pusher 33 can be expanded to push the silicon material when the pusher rod 32 extends into the first telescopic tube 21, and can be retracted to avoid the silicon material when it exits the first telescopic tube 21. In this way, when the driver 31 drives the pusher rod 32 to move back and forth, the silicon material continuously falling into the first telescopic tube 21 from the hopper 20 can be pushed towards the second telescopic tube 22 through the pusher 33.

[0053] A weighing device 23 is provided outside the hopper 20. The weighing device 23 is located above the first telescopic tube 21 and is used to weigh the remaining silicon material in the hopper 20 in real time. By weighing the remaining silicon material in the hopper 20 in real time through the weighing device 23, the usage amount of the recycled silicon material can be fed back in time, so as to ensure the consistency between the prepared amount of the recycled material and the required amount, and prevent abnormal events such as overfeeding or underfeeding.

[0054] A control panel 11 with a display screen is provided on the side of the base 10. The control panel 11 is electrically connected to the weighing device 23 to control the latter to perform weighing operations. The display screen is used to display the prepared amount and the remaining silicon material in the hopper 20. By comparing the prepared amount and the remaining silicon material in the hopper 20, it is possible to check whether the usage amount of the recycled silicon material is consistent with the required amount.

[0055] A vacuum pump 12 is installed inside the base 10. The vacuum pump 12 is connected to the sealing cover 24 at the top of the hopper 20 through a pipeline 13. A program-controlled valve 14 is installed on the pipeline 13, and the program-controlled valve 14 is electrically connected to the control panel 11. After the hopper 20 is filled with a certain amount of prepared material, the sealing cover 24 is covered, and the pipeline 13 is connected. After the second telescopic tube 22 extends into the single crystal furnace and a part of the first telescopic tube 21 remaining outside the single crystal furnace is connected to the secondary chamber sight glass of the single crystal furnace through a flange, the program-controlled valve 14 and the vacuum pump 12 are opened to perform a vacuum pumping operation on the inside of the hopper 20, so that the pressure inside the hopper 20 is kept consistent with the pressure inside the single crystal furnace, thereby preventing external oxygen from entering the single crystal furnace during the recycling of the silicon material, and effectively preventing the melt in the quartz crucible from being oxidized.

[0056] A vacuum gauge (not shown in the figure) electrically connected to the control panel 11 is also installed inside the base 10, which is used to measure the vacuum degree inside the hopper 20, and this vacuum degree can be displayed on the display screen. According to the vacuum degree inside the hopper 20, the running time of the vacuum pump 12 is controlled, so as to adjust the pressure inside the hopper 20 to make it consistent with the pressure inside the single crystal furnace.

[0057] The bottom surface of the base 10 is installed with traveling wheels 15 for realizing the movement of this refeeding device. Through the traveling wheels 15, this refeeding device can be moved to any single crystal furnace that needs refeeding, improving the applicable range of this refeeding device. Thus, it is not necessary to separately configure a set of refeeding equipment for each single crystal furnace, saving the equipment investment cost.

[0058] In this embodiment, there are a total of 4 traveling wheels 15, which are respectively installed at the four corners of the bottom surface of the base 10; the 4 traveling wheels 15 are divided into two pairs, one pair of traveling wheels 15 is a fixed-direction wheel, and the other pair of traveling wheels 15 is a universal wheel.

[0059] The above embodiments are only the preferred embodiments of the present utility model and do not limit the technical solutions of the present utility model. Any technical solution that can be achieved on the basis of the above embodiments without creative labor shall be regarded as falling within the scope of the patent rights of the present utility model.

Claims

1. A silicon material re-feeding device for a single crystal furnace, characterized in that: include: Base, used to support other components; A hopper is fixedly mounted on the base, and a first telescopic tube is provided at the bottom thereof for conveying silicon material in the hopper; and A material pushing mechanism, fixedly mounted on the base and facing the first telescopic tube, with a working end extending into the first telescopic tube to push the silicon material; The end of the first telescopic tube away from the material pushing mechanism is sealed and connected to the second telescopic tube through a damping hinge, and the second telescopic tube is connected to the first telescopic tube to receive the silicon material and put it into the quartz crucible in the single crystal furnace.

2. The silicon material re-feeding device for a single crystal furnace according to claim 1, characterized in that: The pusher mechanism comprises a driver, a pusher rod and a pusher connected in sequence; The driver is fixedly mounted on the base; The push rod can move back and forth along the length direction of the first telescopic tube under the drive of the driver; The pusher can be expanded to push the silicon material when the push rod extends into the first telescopic tube, and can be retracted to avoid the silicon material when the push rod exits the first telescopic tube.

3. The silicon material re-feeding device for a single crystal furnace according to claim 1 or 2, characterized in that: A weighing device is provided outside the hopper; The weigher is located above the first telescopic tube and is used to weigh the amount of silicon material remaining in the hopper in real time.

4. The silicon material re-feeding device for a single crystal furnace according to claim 3, characterized in that: A control panel with a display screen is provided on the side of the base; The control panel is electrically connected to the weighing device to control the latter to perform weighing operation; The display screen is used to display the prepared material quantity and the remaining silicon material quantity in the hopper.

5. The silicon material re-feeding device for a single crystal furnace according to claim 4, characterized in that: A vacuum pump is installed inside the base; The vacuum pump is connected to the sealing cover on the top of the hopper through a pipeline; A program-controlled valve is installed on the pipeline; The program-controlled valve is electrically connected to the control panel.

6. The silicon material re-feeding device for a single crystal furnace according to claim 5, characterized in that: A vacuum gauge electrically connected to the control panel is also installed inside the base for measuring the vacuum degree inside the hopper, and the vacuum degree can be displayed on the display screen.

7. The silicon material re-feeding device for a single crystal furnace according to any one of claims 1, 2, 4 to 6, characterized in that: The bottom surface of the base is provided with walking wheels for realizing the movement of the re-investment device.

8. The silicon material re-feeding device for a single crystal furnace according to claim 7, characterized in that: There are 4 walking wheels in total, which are respectively installed at the four corners of the bottom surface of the base; The four running wheels are divided into two pairs, one pair of the running wheels is fixed wheels, and the other pair of the running wheels is universal wheels.

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