The invention relates to a top-down induced growth
perovskite thin film, a method and a
light emitting diode application, and the method comprises the following steps:
coating a substrate with a
perovskite precursor solution to form a
perovskite wet film; and covering the perovskite wet film with a
monocrystalline silicon wafer, carrying out stepped annealing, taking down the
monocrystalline silicon wafer, and continuously annealing to obtain the perovskite thin film. According to the invention, the
monocrystalline silicon wafer covers the perovskite wet film, stepped annealing is coupled, and the
crystal orientation surface of the monocrystalline
silicon wafer is in direct contact with the surface of the perovskite wet film, so that a directional
crystallization physical environment from top to bottom is created, crystals are enabled to start from the upper surface of the film and extend downwards, bulk phase random
nucleation is effectively inhibited, and the performance of the
perovskite solar cell is improved. According to the preparation method disclosed by the invention, the preferred growth of crystals is promoted, the perovskite film which is consistent in
crystal orientation height, compact, low in defect density and preferred in orientation can be prepared, and the
photoluminescence external
quantum efficiency of the perovskite film is comprehensively improved; when the material is applied to a light-emitting
diode device, the device performance can be remarkably improved.