73 results about "Directed crystallization" patented technology

The invention relates to the technical field of tunnel drainage, and specifically discloses a directional accelerated crystallization device for a tunnel drainage system and a method for using the device. The device comprises a crystallization pool component, a felt layer and a medicine box component, wherein the crystallization pool component comprises a crystallization pool, and a pool cover is arranged on the top of the crystallization pool; the crystallization pool comprises a front wall, a rear wall, an outer wall and an inner wall; the medicine box component comprises a medicine storage box, and a horizontal mesh medicine box is arranged at the bottom of the medicine storage box, and the mesh medicine box is a double-layer hollow mesh structure, and the bottom of the medicine storage box is connected to the mesh medicine box, and reactive drugs are placed in the mesh medicine box; the invention takes into account the influence of temperature, flow rate, chemical drugs, crystallization pool shape and surface morphology on the crystallization of tunnel water, and can realize the idea of ​​directional crystallization of the tunnel drainage system, and at the same time has the advantages of simple structure, easy medicine replenishment, cleaning, repair and maintenance, and can be applied to tunnels that have been put into operation, and can also be applied to tunnels in the design stage.

According to the preparation method, a composite alkaline solution with a specific pH value is adopted as a mineralization liquid phase medium, a silicon-aluminum activating agent, a mineralization accelerant and a crystal nucleus inducer are combined, CO2 gas is introduced into a liquid phase environment to directly trigger a depolymerization reaction of silicon-oxygen bonds and aluminum-oxygen bonds on the surfaces of fly ash particles, and the mineralization cementing material is obtained. The reaction conditions are easy to realize and control, the mineralized cementing material obtained by the preparation method is a non-cement-based material, and large-dosage fly ash gel is realized through mineralization-organic activation excitation. In addition, a gradient mineralization-directional crystallization process is initiated, the ion concentration and the temperature field of a mineralization system are regulated and controlled by stages, the coal ash is guided to dissociate, CO2 gas is introduced, a silicon-aluminum activating agent and a mineralization accelerant are added, and an intermediate is obtained; and generating the mineralized gelling material containing high-activity C-S-H gel and ettringite crystals from the calcium source substance according to a preset crystallization path.

The invention provides a production device and process for increasing the content of magnesium citrate crystals. The problems that in the prior art, the impurity co-crystallization rate is high, and crystal forms are difficult to control are solved. The device comprises a gradient temperature control multi-stage crystallization device and a crystal form directional regulation and self-adaptive separation system. The gradient temperature control multi-stage crystallization device is composed of a main crystallizer, a gradient temperature control system, an ultrasonic-assisted system and a liquid phase partition circulating system, and the crystallization environment is accurately controlled through the temperature gradients of five independent temperature zones. The crystal form directional regulation and self-adaptive separation system is composed of a seed crystal dynamic inoculation device, an electric field auxiliary directional crystallization system, a real-time crystal morphology analysis system and a self-adaptive separation system, and the crystal morphology and particle size distribution can be accurately controlled. According to the process disclosed by the invention, the main content of magnesium citrate is increased to 98.8 + / -0.3%, heavy metal impurities and organic impurities are respectively reduced by 70% and 75%, the crystal form consistency is increased to 96 + / -2%, the production period is shortened by 33%, and the process has remarkable economic benefits and social benefits.

The invention discloses an aluminum anodic oxidation electrolyte for improving the adhesion density of an electrode foil oxidation film, and relates to the technical field of anodic oxidation, the electrolyte comprises 3%-10% of ammonium dihydrogen phosphate, 0.5%-3% of sulfuric acid, 0.01%-0.2% of nano titanium dioxide or nano aluminum oxide, 0.05%-0.5% of an organic buffer agent, and the balance deionized water; the organic buffering agent is used for stabilizing the pH value in a range of 4.5-6.0; nano titanium dioxide or nano aluminum oxide is used as an oxidation film nucleation center to promote directional crystallization of gamma '-Al2O3; the sulfuric acid component improves the conductivity of the electrolyte; ammonium dihydrogen phosphate generates an aluminum phosphate barrier layer on the surface layer of the oxidation film to enhance the waterproof performance of the film layer; according to the electrolyte, the adhesion density and crystallinity of an oxidation film can be remarkably improved, the uniformity and waterproof performance of a film layer are improved, the specific volume stability and the formation efficiency are improved, and the electrolyte is suitable for continuous production of the high-performance aluminum electrolytic capacitor.

A hydrometallurgical process for recovering a plurality of metals from a complex rare and precious material, comprising the following steps: step 1: adding a complex rare and precious material to a hydrochloric acid solution, adding an oxidant for reaction, and then performing filtration to obtain a chlorination liquid and a chlorination residue; step 2: using two-stage counter-current gold loading to obtain a gold-loaded liquid and a post-loading liquid, reducing the gold-loaded liquid, performing clarification to obtain an organic phase, and filtering a precipitate to separate a post-reduction liquid and sponge gold; performing evaporation and concentration on the post-reduction liquid to produce a concentrate 1 and a condensate; and cooling and crystallizing the concentrate, performing filtration to obtain residual oxalic acid, and returning the residual oxalic acid to the reduction process and a post-crystallization liquid to gold loading; step 3: performing low-temperature distillation on the post-loading liquid to obtain a concentrate 2; step 4: performing high-temperature distillation on the concentrate 2 to obtain a concentrate 3; step 5: performing directional crystallization and centrifugal filtration on the concentrate 3 to obtain a crystallization residue and selenous acid; and step 6: washing the crystallization residue by using cold water or a low-acid-level condensate produced in step 3, and performing filtration to obtain a tellurium residue and a palladium-platinum-rhodium-rich liquid.

The invention discloses a method and equipment for in-situ synthesis of food-grade nano iron oxide from a donkey-hide gelatin medium, and the method comprises the following steps: dissolving enzymolysis donkey-hide gelatin peptide at 75-82 DEG C by using an interlayer heating type gelatin boiling tank to form a reaction medium, applying 40-60kHz ultrasonic waves through a piezoelectric ceramic ultrasonic vibrator array integrated at the bottom of the tank, and generating a 0.3-0.5 T magnetic field through a Helmholtz coil surrounding the tank, the uniform dispersion and directional crystallization of Fe < 3 + > / Fe < 2 + > (the molar ratio is 2: 1) in a donkey-hide gelatin matrix are synergistically promoted; the preparation method comprises the following steps: accurately regulating the pH value to 8.5-9.5 by utilizing an ammonia water pulse quantitative injection device, combining citric acid-ascorbic acid dual modification, and finally carrying out magnetic separation, ceramic membrane filtration and freeze drying to obtain the high-purity beta-cyclodextrin with the average particle size of 38.5 + / -4.2 nm (PDilt; 0.2) of nano iron oxide; the bioavailability is more than two times that of a traditional iron agent, and no organic solvent is left; according to the method, safe, efficient and large-scale preparation of the nano iron oxide is realized through equipment-process collaborative innovation.

The invention discloses a method for preparing high-purity indium by adopting vacuum purification and directional crystallization, which comprises the following steps of: purifying crude indium into 6N-grade indium by using a vacuum furnace with a built-in special-shaped distillation condensing device, and then preparing the 6N-grade indium into 7N-grade high-purity indium by using a directional crystallization furnace. The lower graphite cylinder (2) and the upper graphite cylinder (4) are internally provided with a graphite crucible (3), the special-shaped crucible support (5) and the quartz crucible (6) are arranged at the bottom of the upper graphite cylinder, the graphite gas guide cylinder (7) is arranged on the upper graphite cylinder and provided with a graphite top cover (8) and a funnel-shaped cylinder bottom, and the quartz plate (9) is contained in the graphite gas guide cylinder. According to the method, the ultra-pure indium with the purity larger than 99.99999% is efficiently prepared, the product quality is stable, the needed equipment investment is small, and the production process is stable and reliable.

The invention relates to the technical field of polyolefin-based membranes, and provides a method for eliminating directional crystallization of a polyolefin-based membrane, which comprises the following steps: S1, photoinitiator pretreatment: mixing a photoinitiator and first solvent oil, heating and melting to obtain a premixed solution; s2, mixing the premixed solution with second solvent oil to obtain a mixed solution; s3, melting polyolefin resin, mixing the molten polyolefin resin with the mixed solution, extruding to form a film, and cross-linking to obtain a polyolefin base film; the first solvent oil and the second solvent oil respectively and independently comprise mineral oil. According to the technical scheme, the problem that the acupuncture strength of the polyolefin-based film is poor due to directional crystallization of the polyolefin-based film in the related technology is solved.

The utility model relates to the technical field of copper material preparation, in particular to a directional crystallizer for continuous copper material solidification, which comprises a cylindrical outer sleeve and a mandrel arranged in the outer sleeve, and the mandrel comprises a fixed end and a forming end; the fixed end is connected with the jacket through a connecting mechanism; the connecting mechanism comprises a sliding block in elastic sliding connection with the outer sleeve, the sliding direction of the sliding block is the radial direction of the outer sleeve, a groove is formed in the circumferential outer wall of the fixed end, and a guide face is arranged at one end of the sliding block. And the connection mode of the fixed end and the outer sleeve is optimized, so that the dismounting and remounting processes are simpler, more convenient and quicker.

The invention belongs to the technical field of building materials, and particularly relates to a phosphogypsum-based cementing material additive based on an organic-inorganic composite oriented crystallization network, a cementing material and application. The porous adsorption-reaction agent, the superfine calcium sulfate whisker, the composite thickening time control agent, the organic polymer network agent, the interface reinforcing agent, the active filler and other components are used together, and a traditional alkaline excitation route is avoided through directional crystallization and an organic-inorganic composite network; the composite network obviously improves the mechanical property of the material and increases the softening coefficient; in addition, resource utilization of a large amount of industrial solid waste is achieved, energy is saved, carbon is reduced, the green sustainable development strategy is met, and an economical and feasible solution is provided for high-value and large-scale utilization of phosphogypsum.

The invention belongs to the technical field of ardealite resource utilization, and particularly relates to a method for recycling fluorapatite from ardealite leacheate through ion activity control. The method comprises the following steps: carrying out on-line detection on a fluorapatite saturation index on a phosphogypsum leacheate stock solution, and adjusting the supplementing amount of a Ca source / a P source / an F source in real time to keep a system supersaturated; adding background electrolyte, a complexing agent and a crystal face regulating agent into the treated solution to obtain a crystal precursor solution; controlling the temperature to be 50-90 DEG C, adjusting the pH value of the system to be 6.4-6.9, supplementing Ca < 2 + >, adding FA seed crystal, and uniformly stirring and mixing; the temperature is increased to 70-95 DEG C, the pH is increased to 6.8-7.8, a surface rearrangement accelerant is added for directional crystallization and solid-liquid separation, a solid product is washed and dried, and fluorapatite is obtained. FA crystal nucleation is controlled and regulated through ion activity, so that the yield and the purity of a target product are remarkably improved.

The invention discloses a self-adaptive magnetic field regulation and control magnetic control directional crystallization process in high-purity gallium production, which comprises the following steps: step 1, raw material pretreatment: putting a gallium raw material containing impurities into a smelting furnace, and heating to a temperature above a melting point, so that the gallium raw material is completely molten into liquid gallium; waste heat is recovered through a heat exchange device in the melting process and is used for preheating subsequent raw materials or other production links; 2, setting a self-adaptive magnetic field: transferring the liquid gallium into a crystallization container with a magnetic field generating device; step 3, accurate temperature control: arranging a plurality of coil heating units and water pipe cooling units outside the crystallization container, and arranging temperature sensors at different heights inside the crystallization container; step 4, crystal separation and post-treatment; the self-adaptive magnetic field regulation and control magnetic control directional crystallization process in high-purity gallium production can ensure the purity and quality of crystals through magnetic field regulation and control during use, can also effectively utilize the waste heat of equipment, reduces the production cost, and is suitable for popularization and application.

The invention belongs to the technical field of preparation of semiconductor crystal materials for high-performance radiation detection, and particularly relates to a preparation method of a low-twin-line tellurium-cadmium compound single crystal based on a moving heater method. Directional seed crystals with specific crystallographic orientation, an alloy material and a polycrystal feeding material are sequentially arranged in the growth container from bottom to top, the directional seed crystals and the polycrystal feeding material are both Cd1-xZnxTe, and the alloy material is composed of Te and Cd1-xZnxTe pre-dissolved in the Te; a moving heater method is adopted, an alloy material is melted in an axial gradient temperature field to form a melting zone, and the melting zone is driven to directionally migrate through relative movement of a growth container and the temperature field, so that Cd1-xZnxTe is directionally crystallized and grown on a seed crystal. The method can effectively inhibit the formation of twin crystal lines, obtains the tellurium-cadmium compound single crystal with a complete structure and uniform components, and can be industrially used in the fields of high-performance radiation detection, medical imaging and the like.

The invention relates to a method for rapidly growing a compact SiC single crystal at 1823K, and belongs to the technical field of semiconductor materials. The method comprises the following steps: pre-melting silicon, rare earth metal RE, a transition metal additive M and metal aluminum in a specific ratio into a Si-RE-Al-M alloy ingot by adopting an electric arc furnace under a micro-negative-pressure inert atmosphere; the pre-melted Si-RE-Al-M alloy ingot is placed in a graphite crucible or a silicon carbide ceramic crucible, under the specific temperature gradient condition, the temperature of the alloy ingot is increased to 1823 K through electromagnetic induction or resistance heating, the alloy ingot is melted again, heat preservation is conducted for 1 hour, and a Si-RE-Al-M-C solution with saturated SiC is obtained; under the same temperature gradient and inert atmosphere, the SiC seed crystal descends from the top of the solution at a specific rotation speed and is inserted into the SiC saturated Si-RE-Al-M-C liquid solution for growth of the SiC single crystal, and the block SiC single crystal is obtained; and adjusting the silicon-carbon ratio in the residual solution, and removing redundant carbon in the residual solution by adopting an electromagnetic directional crystallization technology, so that the residual solution is recycled and is used for growing the SiC single crystal again. According to the present invention, the rapid growth of the SiC single crystal at the low temperature of 1823 K can be achieved under the specific Si-RE-Al-M alloy ingot ratio, the solvent inclusion during the growth of the SiC single crystal through the solution method is inhibited, the compact high-quality block SiC single crystal is obtained, the residual solution for the growth of the SiC single crystal can be recovered, and the cost of the growth of the SiC single crystal through the liquid phase method is further reduced.

The invention discloses a superconducting tape film preparation method, which comprises the following steps: when a superconducting tape is subjected to film preparation through a pulsed laser deposition (PLD) or metal organic chemical vapor deposition (MOCVD) process, multiple thermal crystallization-quenching process steps are carried out, that is, the superconducting tape sequentially passes through a thermal crystallization region and a quenching region for multiple times, each time the superconducting tape is heated in the thermal crystallization area to complete directional crystallization, and then the superconducting tape enters the quenching area to be rapidly cooled. The multi-time'thermal crystallization-quenching 'process step is realized by a multi-stage'thermal crystallization-quenching' functional unit, and in the multi-stage'thermal crystallization-quenching 'functional unit, a plurality of thermal crystallization areas and quenching areas are sequentially and crossly arranged to form a plurality of stages of temperature control. According to the method, the problem of warping of the thick film of the superconducting tape is solved through stress release.

The invention discloses high-purity lithium borohydride and a preparation method thereof, and belongs to the technical field of inorganic synthesis.The preparation method comprises the steps that firstly, surface coordination activation is conducted on micron-sized lithium hydride through amino silane, and the reaction activity of the micron-sized lithium hydride is remarkably improved; and then, in a uniform ionic liquid organic solvent composite medium, efficiently synthesizing lithium borohydride with a purified borane complex at a mild temperature. For key impurity chloride ions, trimethylchlorosilane is innovatively introduced to carry out targeted precipitation conversion, and effective removal is carried out before crystallization. And finally, directly separating out a high-purity product from a reaction system through a directional crystallization technology. According to the high-purity lithium borohydride and the preparation method thereof disclosed by the invention, high-efficiency preparation of high-purity and low-chloride-ion lithium borohydride under a mild condition is realized, a key reagent can be recycled, and the problems of high energy consumption and insufficient purity in a traditional method are perfectly solved.

The application belongs to the technical field of polyethylene pipe materials, and particularly relates to a high-melt-hanging-resistance high-density polyethylene pipe material and a preparation method thereof. The polyethylene pipe material comprises: 80-95 parts by weight of high-density polyethylene resin, and 5-20 parts by weight of directional crystallization nucleating agent. The directional crystallization nucleating agent comprises 85wt%-95wt% one-dimensional nanomaterial and 5wt%-15wt% nano inorganic nucleating agent, based on the total amount of the directional crystallization nucleating agent. The modified polyethylene pipe material has improved zero shear viscosity and melt strength, and can be applied to large-diameter and thick-wall pipe material products.

The invention belongs to the technical field of optical crystal preparation, and provides a magnesium fluoride crucible descending type directional crystallization purification method for ultraviolet optical crystal manufacturing. Magnesium fluoride raw materials are placed in a vacuum furnace to be subjected to desorption pretreatment, then the raw materials are fused, subjected to heat preservation and homogenized, first-process directional crystallization is achieved through descending displacement of a crucible relative to a hot area, a first ingot body is obtained, impurities are enriched towards the tail end along with the crystallization process, and only a local section of the enriched end is heated and remelted to form a controlled molten pool; the middle-section main body is kept in a solid state; the temperature gradient direction is reversed by switching the power ratio of a heating area, the molten pool is subjected to second-process directional crystallization in the opposite direction to form a second ingot body, the second ingot body is axially cut in a segmented mode, a middle purification section is reserved to serve as a high-purity raw material, and the middle purification section can be repeatedly executed in the same furnace to obtain a raw material section; according to the method, segregation enrichment and reverse ending are completed in a clean atmosphere, and the method is suitable for manufacturing magnesium fluoride crystals for ultraviolet optical elements.

The invention relates to the technical field of die-casting processes, in particular to an ultrasonic-based directional crystallization induction device and a directional crystallization induction method.The ultrasonic-based directional crystallization induction device comprises a die provided with a cavity used for loading a to-be-formed metal material; the pressing block is arranged at the top of the cavity; the first ultrasonic vibrator is arranged on the pressing block; the second ultrasonic vibrator is inserted into the cavity along the side face of the mold and makes contact with the metal material to be formed in the cavity. The controller is connected with the first ultrasonic vibrator and the second ultrasonic vibrator and used for adjusting working parameters of the ultrasonic vibrators, and the directional crystallization induction device based on ultrasound can accurately measure the temperature of a target device in the outer shell, can effectively protect the temperature measuring bag and has the advantage of being simple in structure.

This invention proposes a method for preparing zinc sulfate heptahydrate through spatially induced directional crystallization via a zinc-substrate rolled structure. The method involves rolling zinc sheets into zinc coils, utilizing the geometric constraints between the zinc coil layers in conjunction with the high-speed shearing of the reaction liquid to guide seed crystals to grow along a specific direction, yielding high-purity, uniformly morphologically uniform ZnSO4·7H2O crystals. This method achieves ultra-low impurity residue while exhibiting breakthrough structural stability, with a product purity reaching 99.99%. Environmental testing shows that the material retains over 98% of its initial performance during long-term use, successfully solving the stability problems caused by lattice distortion, impurity residue, and industrial scale-up in traditional processes, providing a reliable guarantee for high-end material applications.

The application discloses a process for recovering multiple metals from complex rare and precious materials by a full-wet method, which comprises the following steps: step 1: adding the complex rare and precious materials into a hydrochloric acid solution, adding an oxidizing agent to react, and then filtering to obtain a chlorination liquid and a chlorination residue; step 2: adopting two-stage countercurrent gold loading to obtain a gold-loaded liquid and a post-loading liquid, reducing the gold-loaded liquid, clarifying an organic phase, and filtering a precipitate to separate a post-reduction liquid and sponge gold; the post-reduction liquid is evaporated and concentrated to produce concentrated liquid 1 and a condensate; the concentrated liquid is cooled and crystallized, and the residual oxalic acid is filtered out to return to the original process, and the post-crystallization liquid is returned to gold loading; step 3: low-temperature distillation of the post-loading liquid to obtain concentrated liquid 2; step 4: high-temperature distillation of the concentrated liquid 2 to obtain concentrated liquid 3; step 5: directional crystallization and centrifugal filtration of the concentrated liquid 3 to obtain crystallization residue and selenous acid; and step 6: washing and filtering of the crystallization residue by using cold water or the low-acid condensate produced in step 3 to obtain tellurium residue and a palladium-platinum-rhodium-rich liquid. The process provided by the application has the advantages of no waste water generation, a short process flow and high recovery rate of precious metals.

The present invention relates to the technical field of die-casting processes, and in particular to an ultrasound-based directional crystallization induction device and a directional crystallization induction method, comprising: a mold, wherein the mold is provided with a cavity for loading a metal material to be formed; a pressing block, wherein the pressing block is arranged at the top of the cavity; a first ultrasonic vibrator, wherein the first ultrasonic vibrator is arranged on the pressing block; a second ultrasonic vibrator, wherein the second ultrasonic vibrator is inserted into the cavity along the side of the mold and contacts the metal material to be formed in the cavity; and a controller, wherein the controller is respectively connected to the first ultrasonic vibrator and the second ultrasonic vibrator and is used to adjust the working parameters of each ultrasonic vibrator. The ultrasound-based directional crystallization induction device can accurately measure the temperature of a target device in an outer shell, can effectively protect a temperature measuring package, and has the advantages of a simple structure.

The invention discloses a preparation method of a pure LuAG-Nd: LuAG continuous heat dissipation crystal, during crystal preparation, a horizontal directional crystallization method is adopted, and the length of a melting zone is reasonably controlled, so that permanent and interface-free uniform combination of an undoped crystal (LuAG) and a doped crystal (Nd: LuAG) of which the segregation coefficient of the same matrix is less than 1 (the segregation coefficient of Nd < 3 + > ions is 0.18-0.25) is realized; the high-quality large-size lath-shaped pure LuAG-Nd: LuAG continuous heat dissipation crystal is obtained by reasonably controlling the growth rate, the internal defect density of the crystal is low, the physical performance is excellent, the continuous heat dissipation crystal can effectively solve the problems of oscillation and non-uniform heat distribution caused by ASE, and the problem of an interface between crystals does not exist. The method is simple in process, easy to implement and convenient to popularize and apply.

The invention discloses a horizontal directional crystallization growth method of an Nd, Ce: LuAG crystal, which comprises the following steps: in a single crystal growth process, adopting a zone melting mode of three-phase coexistence of a single crystal, a melt and a pre-crystallized polycrystalline raw material, controlling a melting zone to be 20-25mm, and enabling the pre-crystallized polycrystalline raw material to form a narrow melting zone to obtain a solute non-conservative system so as to control components and realize a segregation coefficient k0lt; nd < 3 + > (k0 = 0.18-0.25) with the segregation coefficient of about 0.1 and Ce < 3 + > with the segregation coefficient of about 0.1 are uniformly doped in a LuAG matrix, and the growth rate is reasonably controlled, so that the Nd < 3 + > and Ce < 3 + > uniformly doped high-quality Nd, Ce: LuAG crystal is obtained. The crystal prepared through the method is high in quality and free of the defects of a core, a side core and the like, and the problem that high-quality Nd, Ce: LuAG crystals with uniform and controllable components are difficult to prepare through an existing crystal growth method is solved.

The invention discloses a preparation method of 6N-grade high-purity gallium oxide. The method comprises the following steps: directionally crystallizing and purifying a raw material metal gallium to obtain high-purity gallium; dissolving high-purity gallium in nitric acid, evaporating and concentrating, and crystallizing at low temperature to obtain gallium nitrate crystals; the preparation method comprises the following steps: dissolving gallium nitrate crystals in ultrapure water, and sequentially carrying out ammonia water neutralization and aging reaction to obtain a gallium oxide precursor solution; and filtering, washing, drying and calcining the gallium oxide precursor solution in sequence to obtain the gallium oxide photocatalyst. According to the method, directional crystallization and gallium nitrate recrystallization are effectively combined, so that the product purity is greatly improved, and the stability and continuity of product production are effectively ensured; according to the method, electrolysis and replacement with high-purity gallium at the grade of 5N or above are not needed, stable preparation of the 6N-grade gallium oxide can be achieved only through the 3-4N-grade metal gallium, and the problems that in the prior art, high-purity gallium is high in cost, and stable and continuous production is difficult are effectively solved.

The invention provides a preparation method of a metal material with a multi-phase heterostructure, which comprises the following steps of: weighing metal raw materials according to the components of the metal material, smelting to obtain molten metal, carrying out electric pulse treatment on the molten metal to obtain a melt, carrying out directional crystallization on the melt to obtain a cast ingot with an inclined splayed columnar crystal structure, carrying out hot working to obtain a blank, and carrying out heat treatment on the blank to obtain the metal material with the multi-phase heterostructure. And then the blank is subjected to cold machining treatment, a cold machined part is obtained, finally, the cold machined part is subjected to micro-area electric treatment, and the metal material with the multi-phase heterostructure is obtained. According to the method, a structure of a core columnar crystal and an edge equiaxed crystal is obtained through hot working, the hard outside and the tough inside are achieved, then more dislocation and deformation twin crystals are obtained through large-deformation cold working treatment, finally, the material is subjected to zoning treatment through micro-zone electric treatment, a structure with a softening zone and a hardening zone alternated is obtained, and tough alternation is achieved; under the synergy of the process, the multiphase heterostructure metal material which is hard outside and tough inside and has excellent mechanical properties is obtained, and the toughness of the multiphase heterostructure metal material is alternated.

The invention discloses a method for improving purity of germanium metal to reduce defects of germanium single crystals for solar cells, and belongs to the technical field of preparation of high-purity germanium materials. The method comprises the steps of quartz tube cleaning, graphite boat cleaning, zone-melting germanium ingot cleaning, charging into a furnace, high-temperature melting and directional crystallization and germanium ingot cleaning, specifically, after the zone-melting germanium ingot is re-melted at the high temperature of 1300 DEG C, horizontal directional cooling crystallization is conducted, so that micro-trace impurities in germanium melt are enriched at the tail of the germanium ingot, and the germanium ingot is cleaned. Meanwhile, a hydrogen atmosphere with the purity being 99.999% or above is used for protecting the germanium melt from being oxidized by oxygen, and volatilized trace impurities are taken away through hydrogen flow. When germanium single crystal growth is carried out after treatment of the method, compared with a conventional method, the proportion of crystal defects during crystal growth of a Czochralski (CZ) method is reduced to 5% or below from 30% during direct crystal growth, and the proportion of crystal defects during crystal growth of a vertical gradient solidification (VGF) method is reduced to 2% or below from 10% during direct crystal growth.

The invention discloses a preparation method of light self-repairing concrete, and relates to the technical field of concrete. The method comprises the following steps: firstly, efficiently packaging a calcium nitrate solution in hollow glass beads by utilizing a negative pressure impregnation technology; then growing a porous zeolite crystal coating on the surface of the microbead in situ by adopting a sol-gel method to form a self-repairing filler with a core-shell-hole gradient structure; when the concrete cracks to cause the breakage of the microbeads, the Ca in the cavity is quickly released, and the Ca adsorbed in the zeolite layer is gradually dissociated along with water permeation, so that the new microcracks are continuously repaired. Then, uniformly coating the surface and pores of the carboxymethyl cellulose hydrogel network with polydopamine in an in-situ oxidative polymerization manner to form composite hydrogel with photo-thermal responsiveness; lighting and heating to trigger dynamic coordination bond dissociation; meanwhile, heat drives rapid directional crystallization of a repair product by promoting the ion diffusion rate, and a compact mineralization layer is formed. The concrete prepared by the invention has the effects of light weight and self-repairing.

The invention relates to a top-down induced growth perovskite thin film, a method and a light emitting diode application, and the method comprises the following steps: coating a substrate with a perovskite precursor solution to form a perovskite wet film; and covering the perovskite wet film with a monocrystalline silicon wafer, carrying out stepped annealing, taking down the monocrystalline silicon wafer, and continuously annealing to obtain the perovskite thin film. According to the invention, the monocrystalline silicon wafer covers the perovskite wet film, stepped annealing is coupled, and the crystal orientation surface of the monocrystalline silicon wafer is in direct contact with the surface of the perovskite wet film, so that a directional crystallization physical environment from top to bottom is created, crystals are enabled to start from the upper surface of the film and extend downwards, bulk phase random nucleation is effectively inhibited, and the performance of the perovskite solar cell is improved. According to the preparation method disclosed by the invention, the preferred growth of crystals is promoted, the perovskite film which is consistent in crystal orientation height, compact, low in defect density and preferred in orientation can be prepared, and the photoluminescence external quantum efficiency of the perovskite film is comprehensively improved; when the material is applied to a light-emitting diode device, the device performance can be remarkably improved.

The invention relates to the technical field of polaroid release films, and discloses an optical-grade polyester film for a polaroid release film and a preparation method of the optical-grade polyester film. 5%-10% of bisphenol A polyester; 8%-12% of an N-alkylamide comonomer, the carbon chain length of the N-alkylamide comonomer is C6-C18, and the molecular structure of the N-alkylamide comonomer comprises at least one carbonyl group and an amide group; the substituent group of the pyridine derivative is alkyl, fluoro, carboxyl or hydroxyl, and the carbon chain length of the substituent group is C1-C6; and 0.3%-0.6% of an organophosphate nucleating agent, wherein the nucleating agent is polyphosphate, phosphate or pyrophosphate. And an optimized rheology induced directional crystallization process is adopted, so that molecular chains of the thin film are more orderly arranged in the stretching process, and the technical effect of remarkably improving optical transparency is achieved.