Huge magnetostriction material and mfg. process thereof

A technology of giant magnetostriction and manufacturing process, applied in the field of metal materials, can solve problems such as high price, achieve the effects of small investment, low manufacturing cost, and good low-field performance
CN1435851AInactive Publication Date: 2003-08-13UNIV OF SCI & TECH BEIJING

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
UNIV OF SCI & TECH BEIJING
Publication Date
2003-08-13
Estimated Expiration
Not applicable · inactive patent
Patent Text Reader

Abstract

A giant-magnetostrictive material is (Tb1-x-yDyxRy)(Fe1-z-pBe2Mp)g, where R is chosen from Ho, Er, Pr and Nd, M is chosen from Ti, V, Cr, Co, Ni, Mn, Si, Ga and Al, x=0.65-0.80, y=0-0.15, and g=1.75-2.55. Its preparing process includes smelting mother alloy in Ar atmosphere in vacuum furnace, growing oriented crystallizing material in vacuum or inert gas, and heat treating in vacuum furnace. Its advantages are high magnetostrictive strain ratio, good low-field performance, and low cost.
Need to check novelty before this filing date? Find Prior Art

Description

Technical field:

[0001] The invention belongs to the field of metal materials, and in particular relates to a giant magnetostrictive material mainly with <113> axial orientation and a manufacturing process thereof. Background technique:

[0002] When the magnetization state of a ferromagnetic material changes, its shape and size will change. This phenomenon is called magnetostriction. In the early 1950s, it was discovered that the magnetostrictive strain λ of Ni and Ni-Fe-Co alloys S Can reach 50PPm (1PPm=10 -6 ). People once wanted to use Ni alloy to make magnetostrictive devices. However, because their hysteresis strain is too small, they have not been popularized and applied. Later, people discovered a material with electrostrictive properties, called piezoelectric ceramic material. Among them, the piezoelectric ceramic material with the grade PZT--4 has a stretching strain of 250-400PPm under the action of an electric field. Since then, people have gradually ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More