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Device and method for machining high-density aluminum oxide by plasma

A plasma and aluminum oxide technology, which is applied in the coating process and coating of metal materials, can solve the problems of slow production rate, influence of sapphire quality or yield, uneven quality of products, etc., and achieve the effect of uniform density

Active Publication Date: 2015-06-17
晶鑫晶体(内蒙古)科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, there are two methods for processing high-purity alumina powder into high-density materials: pressing high-temperature sintering method and hydrogen-oxygen flame high-temperature melting method. pollution, the latter will have a certain purification effect in the melting process, but will retain a large amount of hydrogen
Moreover, both methods are intermittent production, and there will be large fluctuations in the quality of products
It has a great impact on the continuous production of downstream industries, and the corresponding products are uneven, causing huge losses
And the production rate of intermittent production slows down, reducing output
When the high-density and high-purity alumina produced by the above two methods is used to grow sapphire single crystals, it will have a great impact on the quality or yield of sapphire.

Method used

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  • Device and method for machining high-density aluminum oxide by plasma

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] a. Use the mixed gas of nitrogen and hydrogen with a volume ratio of 97:3 as the plasma generation gas, and use the radio frequency plasma generator 8 to emit the plasma generation gas. The plasma generation gas enters the plasma torch 10 and emits it at the high frequency induction coil 7 Ionization occurs under the action of a high-frequency magnetic field and the temperature is continuously raised to 10,000°C.

[0036] b. The impurity content of alumina powder with a particle diameter of 0.3-50 μm is detected by glow discharge mass spectrometry: 11 ppm silicon, 5 ppm iron, 10 ppm sodium, 5 ppm manganese, 6 ppm zinc, 5 ppm copper, and 6 ppm calcium , magnesium 4 ppm; the aluminum oxide powder is continuously passed through the radio frequency plasma generator 8 into the plasma torch 10 from the water-cooled feeding funnel 4 at a feeding rate of 400 g / min, and the aluminum oxide powder is heated by plasma at 10000 ° C during the falling process. Instantly melted, molte...

Embodiment 2

[0039] a. Use the mixed gas of helium and hydrogen with a volume ratio of 90:10 as the plasma generating gas, and use the radio frequency plasma generator 8 to emit the plasma generating gas. After entering the plasma torch 10, the plasma generating gas passes through the high frequency induction coil 7 Ionization occurs under the action of the emitted high-frequency magnetic field and the temperature continues to rise to 10,000°C.

[0040] b. The impurity content of alumina powder with a particle diameter of 0.5-50 μm is detected by glow discharge mass spectrometry: silicon 30 ppm, iron 20 ppm, sodium 40 ppm, manganese 10 ppm, zinc 11 ppm, copper 9 ppm, calcium 13 ppm, magnesium 9 ppm; the alumina powder is continuously passed through the radio frequency plasma generator 8 into the plasma torch 10 from the water-cooled feeding funnel 4 at a feeding rate of 350g / min, and the alumina powder is heated by plasma at 10,000°C during the falling process Instantaneous melting occurs ...

Embodiment 3

[0043] a. Use the mixed gas of argon and hydrogen with a volume ratio of 93:7 as the plasma generating gas, and use the radio frequency plasma generator 8 to emit the plasma generating gas. After entering the plasma torch 10, the plasma generating gas passes through the high frequency induction coil 7 Under the action of the emitted high-frequency magnetic field, ionization occurs and the temperature continues to rise to 10000 °C;

[0044] B, use the aluminum oxide powder of embodiment 1; The aluminum oxide powder enters the plasma torch 10 continuously through the radio frequency plasma generator 8 with the feed rate of 450g / min from the water-cooled feeding funnel 4, and the aluminum oxide powder passes through 10000 in the process of falling. The plasma heating at ℃ produces instant melting, and the molten aluminum oxide is deposited on the deposition table 12;

[0045] c. The deposition table 12 maintains a rotating speed of 225r / min while collecting the falling fused alum...

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Abstract

The invention discloses a device and a method for machining high-density aluminum oxide by plasma, and belongs to the technical field of high-density aluminum oxide for sapphire crystals. The device is characterized in that a radio frequency plasma generator (8) and a plasma torch (10) are arranged below a feed hopper, a high-frequency induction coil (7) is wound outside the plasma torch (10), a deposition platform (12) for receiving materials is arranged below the plasma torch (10), and aluminum oxide powder is fed by the feed hopper, instantly melted in the process of falling in the plasma torch (10), solidified in a directional crystallization manner on the deposition platform (12) to obtain the high-purity high-density aluminum oxide. By the aid of the device and the method, the high-purity aluminum oxide cannot be polluted, parts of impurities in the aluminum oxide can be volatilized under the action of high-temperature plasma, and the aluminum oxide is further purified. Continuous process can be kept, production efficiency is accelerated, and the stable performance of the aluminum oxide can be kept.

Description

technical field [0001] A device and method for processing high-density alumina by plasma, belonging to the technical field of high-density alumina for sapphire crystals. Background technique [0002] High-density alumina is mainly used in the field of sapphire crystals. Sapphire is widely used due to its special properties, mainly in the fields of military window materials and LED lighting. With the state's support for the energy-saving industry, LED lighting is increasing day by day, and the demand for high-purity alumina is also growing rapidly. There are many methods for growing sapphire crystals, such as Kyropoulos method and pulling method, heat exchange method, temperature gradient method and so on. In these processes, high-purity alumina is mainly placed in a crucible and heated to the melting point, and then re-grows into a single crystal. In order to increase production and reduce costs, it is necessary to fill the crucible with high-purity alumina raw materials a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B22F3/105C23C24/10
Inventor 王武平宋军杨超
Owner 晶鑫晶体(内蒙古)科技有限公司
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