Growth device and growth method of iridium-free zone-melting gallium oxide crystal

Abstract

The invention discloses a growth device and a growth method of an iridium-free zone-melting gallium oxide crystal. The iridium-free zone-melting method provided by the invention belongs to a method for growing single crystals by a melt method, precious metal is not used as a heating source, an external heating body is used for heating, heat passes through an atmosphere isolation device made of a high-transmittance and high-heat-conduction material to heat and melt a solid gallium oxide polycrystal charge rod or a ceramic rod, then seed crystals are in contact with a melt, and the single crystals are grown by a single crystal growing method. By controlling process conditions such as temperature, rising and falling, rotating speed and the like, a melting region gradually moves upwards, so that a melt region far away from a thermal field is subjected to directional crystallization according to the crystal orientation of seed crystals, and finally, large-size and high-quality gallium oxide single crystals with determined crystal orientation are obtained.

Description

technical field [0001] The invention relates to the field of single crystal growth equipment and technology, in particular to a β-Ga with high quality, large size and definite crystal orientation obtained by a zone melting growth method under conditions close to normal pressure 2 O 3 A growth device and a growth method of a single crystal iridium-free zone melting method gallium oxide crystal. Background technique [0002] Gallium oxide crystal is a transparent ultra-wide bandgap oxide semiconductor material, in which β-Ga 2 O 3 The crystal phase has the advantages of wide band gap (4.9eV) and high breakdown electric field strength, which is far superior to the third-generation semiconductor materials such as silicon carbide and gallium nitride. Research shows that its Barriga figure of merit is about 3400 times that of Si. , about 10 times that of SiC, which can reduce the power loss of the device during use, and will have extremely broad application prospects in the fie...

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Problems solved by technology

[0003] β-Ga 2 o 3 Crystal growth methods include pulling method, guided mode method, Bridgman method, floating zone method, etc. Among them, most of the crucibles used are precious metals as crucible materials, mainly iridium and platinum-rhodium alloys, but due to the melting point of gallium oxide At 1793°C, at the same time, gallium oxide will volatilize and decompose at high temperature, and there is a problem that metal gallium will be enriched in the melt and cause corrosion to the iridium crucible, which will affect the crystal growth process and crystal quality; and the platinum-rhodium alloy crucible has a low melting point It is close to the melting point of gallium oxide, so the temperature control needs to be extremely accurate, and there are problems such as rhodium pollution; in addition, because of the large amount of precious metals required for growth, the cost of crystal growth is high, and the maintenance cost of crucible corrosion after growth is very high; The zone method does not require a precious metal crucible, and its commonly used heating light sources include high-pressure xenon lamps and laser heating, such as the laser heating described in the patent CN 114197032 A; the ordinary optical floating zone furnace used in CN201710011291.8, but limited Due to the size of the heating source, the floating zone method can only obtain crystal rods of φ5-10mm. Although the crystal quality is good, it cannot meet the industrial needs of large quantities and large sizes.

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