Cantilever paddle device of horizontal LPCVD (low pressure chemical vapor deposition) furnace

Abstract

The utility model relates to a cantilever paddle device of a horizontal LPCVD (Low Pressure Chemical Vapor Deposition) furnace, belonging to the technical field of semiconductor processing equipment. Comprising a cantilever paddle body, one end of the cantilever paddle body is provided with a quartz tube inner cavity, a to-be-diffused silicon wafer unit is arranged on the cantilever paddle body, so that the to-be-diffused silicon wafer unit is arranged in the quartz tube, a reaction cover is arranged on the cantilever paddle body, and the reaction cover covers the to-be-diffused silicon wafer unit. An air inlet rotating fan blade is arranged at one end of the reaction cover, an air outlet rotating fan blade is arranged at the other end of the reaction cover, an air inlet guide pipe is arranged in the cantilever paddle body in a penetrating manner, an air inlet of the air inlet guide pipe is arranged outside the quartz tube, an air outlet of the air inlet guide pipe is connected with the reaction cover, and the joint of the air inlet guide pipe and the reaction cover corresponds to the air inlet rotating fan blade. The device is compact in structure and uniform in gas atmosphere, silicon wafer deposition uniformity is improved, and the process requirement of an integrated circuit is met.

Description

Technical Field

[0001] The utility model relates to a horizontal LPCVD furnace cantilever paddle device, belonging to the technical field of semiconductor processing equipment. Background Art

[0002] The diffusion furnace is one of the important process equipment in the front process of the semiconductor production line, and is used for processes such as diffusion, oxidation, annealing, alloying and sintering in industries such as large-scale integrated circuits, discrete devices, power electronics, optoelectronic devices and optical fibers. The diffusion furnace cooperates with the quartz tube therein and is commonly used for the high-temperature diffusion of semiconductor silicon wafers to produce chips. At present, the conventional quartz tube for the diffusion furnace is arranged in the cavity of the diffusion furnace, and the temperature is raised by heating the diffusion furnace. One end of the quartz tube is provided with a plurality of air inlets for respectively introducing a variety of high-purity gases (such as argon, nitrogen, oxygen, etc.) and impurity source gases, and the other end of the quartz tube is provided with an exhaust port for discharging redundant gases. During the diffusion process, the silicon wafer to be diffused is placed in the center of the quartz tube. The quartz tube is heated to 1250 °C in the cavity of the diffusion furnace. A variety of high-purity gases and impurity source gases enter the tube from the air inlets. The impurity source gases react at high temperature and diffuse into the silicon wafer, and the redundant gases are discharged from the exhaust port. Since the process gases introduced by this structure are far from the silicon wafer, the gas atmosphere is not uniform, that is, the gas atmosphere is relatively strong near the inlet pipe position and relatively thin far from the pipe position, resulting in poor film uniformity in the LPCVD process of the silicon wafer operation and unable to meet the process requirements of integrated circuits. Summary of the Utility Model

[0003] The technical problem to be solved by the utility model is to provide a horizontal LPCVD furnace cantilever paddle device for the above-mentioned existing technology, which has a compact structure, improves the deposition uniformity of silicon wafers, and meets the process requirements of integrated circuits.

[0004] The technical solution adopted by the utility model to solve the above problems is: a horizontal LPCVD furnace cantilever paddle device, including a cantilever paddle body. One end of the cantilever paddle body is provided with a quartz tube inner cavity. The silicon wafer unit to be diffused is arranged on the cantilever paddle body, so that the silicon wafer unit to be diffused is arranged in the quartz tube. A reaction cover is arranged on the cantilever paddle body. The reaction cover covers the silicon wafer unit to be diffused. An air inlet rotary fan blade is arranged at one end of the reaction cover, and an air outlet rotary fan blade is arranged at the other end. An air inlet conduit penetrates through the cantilever paddle body. The air inlet of the air inlet conduit is arranged outside the quartz tube, and the air outlet of the air inlet conduit is connected to the reaction cover. The connection between the air inlet conduit and the reaction cover corresponds to the air inlet rotary fan blade.

[0005] One end of the reaction cover is closed, and the other end is open.

[0006] The rotation direction of the air inlet rotary fan blade is the same as that of the air outlet rotary fan blade.

[0007] A plurality of boats are arranged on the cantilever paddle body at uniform intervals. The silicon wafer units to be diffused include a plurality of silicon wafers to be diffused, and the plurality of silicon wafers to be diffused are clamped on the boats.

[0008] Compared with the prior art, the advantages of the present utility model are as follows: A horizontal LPCVD furnace cantilever paddle device has a compact structure, a uniform gas atmosphere, improves the deposition uniformity of silicon wafers, and meets the process requirements of integrated circuits. Description of the Drawings

[0009] Figure 1 It is a schematic diagram of a horizontal LPCVD furnace cantilever paddle device according to an embodiment of the present utility model;

[0010] In the figure, 1 is a quartz tube, 2 is a cantilever paddle body, 3 is a reaction cover, 4 is an intake air duct, 5 is an intake air rotating fan blade, 6 is an exhaust air rotating fan blade, 7 is a silicon wafer, 8 is a boat, 9 is a furnace door, and 10 is an exhaust port. Detailed Embodiment

[0011] The present utility model will be further described in detail below in conjunction with the embodiments of the drawings.

[0012] As Figure 1 shown, a horizontal LPCVD furnace cantilever paddle device in this embodiment includes a cantilever paddle body 2. One end of the cantilever paddle body 2 is provided with the inner cavity of a quartz tube 1, and the silicon wafer units to be diffused are arranged on the cantilever paddle body 2, so that the silicon wafer units to be diffused are arranged in the quartz tube 1. A reaction cover 3 is arranged on the top of the cantilever paddle body 2, and the reaction cover 3 covers the silicon wafer units to be diffused. One end of the reaction cover 3 is closed, and the other end of the reaction cover 3 is open, which is convenient for gas to flow out of the inner cavity of the reaction cover. An intake air rotating fan blade 5 is arranged at the closed end of the reaction cover 3, and an exhaust air rotating fan blade 6 is arranged at the open end of the reaction cover 3. The intake air rotating fan blade 5 and the exhaust air rotating fan blade 6 rotate in the same direction. An intake air duct 4 is penetrated in the cantilever paddle body 2. The intake port of the intake air duct 4 is arranged outside the quartz tube 1, and the exhaust port of the intake air duct 4 is connected to the reaction cover 3, so that the intake air duct 4 is communicated with the inner cavity of the reaction cover 3, and the connection between the intake air duct 4 and the reaction cover 3 corresponds to the intake air rotating fan blade 5. Gas enters the reaction cover through the intake air duct. The intake air rotating fan blade fans the gas to flow towards the open end, and the exhaust air rotating fan blade fans the gas at the open end out of the reaction cover, accelerating the flow of the gas, making the gas atmosphere uniform, improving the balance of diffusion, and improving the deposition uniformity of the silicon wafer units.

[0013] A plurality of boats 8 are arranged on the above-mentioned cantilever paddle body at uniform intervals. The silicon wafer units to be diffused include a plurality of silicon wafers 7 to be diffused, and the silicon wafers to be diffused are clamped on the boats.

[0014] One end of the above-mentioned quartz tube is covered with a furnace door 9. Opening the furnace door is convenient for installing and removing the cantilever paddle body. An exhaust port 10 is opened at the center of the other end of the quartz tube, and the gas flowing out of the inner cavity of the reaction cover flows out through the exhaust port.

[0015] The structure of this application is compact, the gas atmosphere is uniform, the deposition uniformity of the silicon wafer is improved, and the process requirements of integrated circuits are met.

[0016] In addition to the above embodiments, the present utility model also includes other implementation manners. Any technical solutions formed by equivalent transformation or equivalent substitution shall fall within the protection scope of the claims of the present utility model.

Claims

1. A cantilever paddle device for a horizontal LPCVD furnace, characterized in that: It includes a cantilever paddle body, one end of which is provided with a quartz tube inner cavity, a silicon wafer unit to be diffused is arranged on the cantilever paddle body, so that the silicon wafer unit to be diffused is arranged in the quartz tube, a reaction cover is arranged on the cantilever paddle body, the reaction cover covers the silicon wafer unit to be diffused, one end of the reaction cover is provided with an air intake rotating blade, and the other end is provided with an air outlet rotating blade, an air intake duct is passed through the cantilever paddle body, an air inlet of the air intake duct is provided outside the quartz tube, an air outlet of the air intake duct is connected to the reaction cover, and the connection between the air intake duct and the reaction cover corresponds to the air intake rotating blade.

2. A cantilever paddle device for a horizontal LPCVD furnace according to claim 1, characterized in that: One end of the reaction cover is closed, and the other end is open.

3. The cantilever paddle device for a horizontal LPCVD furnace according to claim 1, characterized in that: The rotation direction of the air inlet rotating blade is the same as the rotation direction of the air outlet rotating blade.

4. The cantilever paddle device for a horizontal LPCVD furnace according to claim 1, characterized in that: A plurality of boats arranged evenly at intervals are arranged on the cantilever paddle body, the silicon wafer unit to be diffused comprises a plurality of silicon wafers to be diffused, and the plurality of silicon wafers to be diffused are clamped on the boats.

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