Semiconductor process equipment and process gas circuit structure thereof
By setting up inclined pipeline components in the process gas circuit structure of semiconductor process equipment, the problem of insufficient insulation distance in ICP etching technology is solved, and the adaptation of higher RF power and the improvement of etching performance is achieved.
Patent Information
- Application Number
- CN202420724356.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-04-09
- Publication Date
- 2025-06-24
- Estimated Expiration
- 2034-04-09
AI Technical Summary
In ICP etching technology, with the increase of the radio frequency power of the upper electrode, the insulation distance between the coil and the intake structure is difficult to meet the requirements of higher voltages.
By providing an inclined pipeline assembly in the process gas circuit structure of the semiconductor process equipment, the distance between the pipeline body and the electrode coil is increased, thereby increasing the insulation distance.
It effectively increases the insulation distance between the coil and the intake structure, improves the insulation effect, can adapt to higher RF power requirements, and improves etching performance.
Smart Images
Figure CN223023211U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor manufacturing, and more particularly, to a semiconductor process equipment and its process gas path structure. Background Art
[0002] Etching is one of the key processes in the fabrication of semiconductor devices and has important applications in fields such as integrated circuits (ICs), micro-electro mechanical systems (MEMS), memories, and advanced packaging. Compared with traditional isotropic wet etching, dry etching has great advantages due to its anisotropic characteristics. Low-temperature plasma technology is an important basis for dry etching. An inductive coupled plasma (ICP) source generates plasma by exciting gas under the action of a high-frequency electromagnetic field generated by a high-frequency current passing through a coil. The inductive coupled plasma source can operate at a relatively low chamber pressure and has characteristics such as high plasma density, good uniformity, and small damage to workpieces. With the rapid development of semiconductor manufacturing processes, the requirements for component performance and integration in this field are getting higher and higher, and ICP etching technology has been widely applied, but the challenges it faces are also becoming more and more severe.
[0003] The performance of ICP etching is affected by many process parameters such as radio frequency power, the ratio of inner and outer coil currents, gas pressure, and gas flow rate. Some advanced processes require higher and higher radio frequency power for the upper electrode. When the radio frequency power of the upper electrode increases, the voltage of the upper electrode coil will increase. Higher radio frequency power of the upper electrode poses higher requirements for the insulation distance between the coil and the gas inlet structure.
[0004] Therefore, how to increase the insulation distance between the coil and the gas inlet structure is a technical problem that needs to be urgently solved by those skilled in the art. Summary of the Utility Model
[0005] This application aims to at least solve one of the technical problems existing in the prior art, and proposes a semiconductor process equipment and its process gas path structure, in which the pipe body is inclined, increasing the distance from the electrode coil, thereby increasing the insulation distance.
[0006] To achieve the purpose of this application, a process gas path structure is provided, which is applied to a semiconductor process equipment. The semiconductor process equipment includes an electrode coil and a process chamber. The process gas path structure includes a mounting member and a pipe assembly. The pipe assembly communicates with the process chamber through the mounting member, and the electrode coil is located between the pipe assembly and the process chamber;
[0007] The pipeline assembly includes a connection part and a pipeline body. The connection part is located at the first end of the pipeline body and is used to connect with the installation part. There is a preset angle between the axis of the pipeline body and the plane where the electrode coil is located to increase the distance between the pipeline body and the electrode coil.
[0008] In some embodiments, the number of the pipeline assemblies is multiple, and each pipeline assembly is fixedly connected to the installation part. The preset angles between the axes of each pipeline body and the plane where the electrode coil is located are equal.
[0009] In some embodiments, the number of the pipeline assemblies is two, namely a first pipeline assembly and a second pipeline assembly. The installation part includes a first conveying channel and a second conveying channel for communicating with the inside of the process chamber. The second conveying channel is arranged around the first conveying channel. The first pipeline assembly and the second pipeline assembly are respectively communicated with the first conveying channel and the second conveying channel.
[0010] In some embodiments, the installation part includes two connection ports respectively communicating with the first conveying channel and the second conveying channel, and the two connection parts are respectively connected to the two connection ports.
[0011] In some embodiments, each pipeline body includes a first connection pipe and a process pipe, which are coaxially arranged. One end of the process pipe is fixedly connected to the first connection pipe;
[0012] The first connection pipe is integrally formed with the connection part, and the axis of the first connection pipe forms the preset angle with the electrode coil.
[0013] In some embodiments, the pipeline body further includes a second connection pipe, which is coaxially arranged with the process pipe and is fixedly connected to the end of the process pipe far from the first connection pipe;
[0014] The pipeline assembly further includes a third connection pipe, which is used to connect the gas pipeline for conveying process gas. The second connection pipe and the third connection pipe are integrally formed.
[0015] In some embodiments, the third connection pipe is arranged perpendicular to the axis of the first conveying channel.
[0016] In some embodiments, the connection part has an air inlet arranged parallel to the third connection pipe.
[0017] The present application also provides a semiconductor process equipment, which includes a process chamber, an electrode coil, a gas pipeline, and any one of the above-mentioned process gas path structures. The process gas path structure is used to convey process gas into the process chamber by connecting the gas pipeline with the process chamber.
[0018] In some embodiments, the electrode coil is arranged around the mounting member at intervals, and the distance between the electrode coil and the process gas path structure is greater than or equal to the insulation distance.
[0019] The present application has the following beneficial effects:
[0020] The process gas path structure provided by the present application is applied to a semiconductor process equipment. The semiconductor process equipment includes an electrode coil and a process chamber. The process gas path structure includes a mounting member and a pipeline assembly. The pipeline assembly communicates with the process chamber through the mounting member, and the electrode coil is located between the pipeline assembly and the process chamber. The pipeline assembly includes a connecting portion and a pipeline body. The connecting portion is located at the first end of the pipeline body and is used to connect with the mounting member. There is a preset angle between the pipeline body and the plane where the electrode coil is located.
[0021] Since there is a preset angle between the pipeline body and the plane where the electrode coil is located, this angle can lift the pipeline body upward, thereby increasing the insulation distance between the pipeline body and the electrode coil and improving the insulation effect between the pipeline body and the electrode coil.
[0022] The present application also provides a semiconductor process equipment including the above-mentioned process gas path structure and having the above-mentioned advantages. BRIEF DESCRIPTION OF THE DRAWINGS
[0023] Figure 1 It is a schematic diagram of the process gas path structure provided by a specific embodiment of the present application;
[0024] Figure 2 For Figure 1 the exploded view of the process gas path structure in
[0025] Figure 3 For Figure 1 the front view of the first connecting member in
[0026] Figure 4 For Figure 3 the sectional view taken along A-A in
[0027] Figure 5 For Figure 1 the front view of the mounting member in
[0028] Figure 6 For Figure 5 the sectional view taken along B-B in
[0029] Figure 7 ForFigure 5 Bottom view of the mounting part;
[0030] Figure 8 For Figure 1 Schematic structural view of the relative position between the process gas path structure and the electrode coil in
[0031] Figure 9 For Figure 1 Side view of the connection between the process gas path structure and the process chamber in
[0032] Figure 10 For Figure 1 Top view of the connection between the process gas path structure and the process chamber in
[0033] Wherein, Figures 1 to 10 The reference numerals in
[0034] 1, mounting part; 11, first conveying channel; 12, second conveying channel; 13, connection port; 14, sealing groove; 15, threaded hole; 2, first connecting part; 21, connecting portion; 22, first connecting pipe; 23, through hole; 24, first channel; 25, second channel; 3, process pipe; 4, second connecting part; 41, second connecting pipe; 42, third connecting pipe; 5, sealing ring; 6, electrode coil; 7, gas pipeline; 8, upper cover; 9, observation mechanism; 10, nozzle. Detailed implementation manners
[0035] To enable those skilled in the art to better understand the technical solutions of the present application, the semiconductor process equipment and its process gas path structure provided by the present application will be described in detail below with reference to the accompanying drawings.
[0036] The process gas path structure provided by the present application is applied to a semiconductor process equipment. The semiconductor process equipment includes an electrode coil 6 and a process chamber. The process gas path structure is connected to the process chamber and is used to convey process gas to the process chamber. The electrode coil 6 is used to feed in a high-frequency electromagnetic field. The electrode coil 6 is usually located between the process chamber and the process gas path structure, and the process gas path structure needs to maintain a certain distance from the electrode coil 6 to ensure the insulation effect.
[0037] As Figure 1 shown, the process gas path structure includes a mounting part 1 and a pipeline assembly. The pipeline assembly is connected to the process chamber through the mounting part 1. The pipeline assembly is used to be connected to the gas source of the process gas, and the pipeline assembly is internally connected to the process chamber. The process gas can enter the process chamber through the pipeline assembly and the mounting part 1. The electrode coil 6 is located between the pipeline assembly and the process chamber. The pipeline assembly includes a connecting portion 21 and a pipeline body. The connecting portion 21 is located at the first end of the pipeline body and is used to be connected to the mounting part 1. The pipeline body has a preset included angle with the plane where the electrode coil 6 is located to increase the distance between the pipeline body and the electrode coil 6.
[0038] Optionally, the mounting member 1 is usually connected to the center of the top surface of the process chamber. At this time, the pipeline assembly extends from the center of the top surface of the process chamber to the edge, and is used to connect the gas pipeline 7 for transporting process gas. The electrode coil 6 can be annular and spaced around the outer periphery of the mounting member 1. As Figure 2 shown, the electrode coil 6 is located below the pipeline assembly. There is a preset angle between the pipeline body and the plane where the electrode coil 6 is located. As the distance between the pipeline body and the mounting member 1 increases, the distance between the pipeline body and the plane where the electrode coil 6 is located also gradually increases. The minimum distance between the electrode coil 6 and the pipeline body is the insulation distance. The extension of the pipeline assembly to the edge of the top surface of the process chamber will reduce the distance between the pipeline body and the electrode coil 6, but the existence of the preset angle causes the height of the pipeline body to rise, thereby increasing the minimum distance between the pipeline body and the electrode coil 6, that is, increasing the insulation distance. The increase in the insulation distance can not only improve the safety of the equipment, but also the insulation distance is related to the voltage of the electrode coil 6. The higher the voltage of the electrode coil 6, the greater the required insulation distance. With the increase of the insulation distance, the semiconductor process equipment can adopt a larger radio frequency power, which is convenient for improving the etching performance.
[0039] In the prior art, part of the pipeline body and the mounting member are of an integral structure. To reduce the processing difficulty, this part of the pipeline body extends along the direction parallel to the electrode coil 6, resulting in a small insulation distance between the pipeline body and the electrode coil 6. In this embodiment, the pipeline body as a whole and the mounting member 1 adopt a split structure and are fixedly connected to the mounting member 1 through the connecting portion 21. As Figure 3 and Figure 4 shown, the connecting portion 21 can be plate-shaped and fit the side wall of the mounting member 1. The connecting portion 21 can be fixedly connected to the mounting member 1 through bolt connection. The connecting portion 21 and the mounting member 1 achieve sealing through surface-to-surface cooperation, so it is required that the roughness of their sealing surfaces is low to improve the sealing effect between the connecting portion 21 and the mounting member 1. The distance between the pipeline body starting from the mounting member 1 and the plane where the electrode coil 6 is located gradually increases. The insulation distance between the pipeline body and the electrode coil 6 can be increased without increasing the processing difficulty of the mounting member 1. Moreover, the mounting member 1 does not need to process two protruding pipelines, and the mechanical processing difficulty is low, reducing the processing cost of the components.
[0040] In some embodiments, more than two process gases need to be transported in the process chamber. Therefore, the number of pipeline assemblies is more than two. Each pipeline assembly is fixedly connected to the mounting member 1, and the preset angles between the axes of each pipeline body and the plane where the electrode coil 6 is located are equal. Each pipeline assembly is respectively used to connect different gas pipelines 7, so as to transport more than two process gases into the process chamber. The preset angles between the axes of each pipeline body and the plane where the electrode coil 6 is located are equal, which can make each pipeline body parallel to each other, facilitating management and layout. Of course, the preset angles between each pipeline body and the plane where the electrode coil 6 is located can also be different, as long as the requirement of insulation distance is met, which is not limited herein.
[0041] In some embodiments, the number of pipeline assemblies is two, namely the first pipeline assembly and the second pipeline assembly. As Figure 6 and Figure 7 shown, the mounting member 1 includes a first delivery channel 11 and a second delivery channel 12 for communicating with the inside of the process chamber. The second delivery channel 12 is arranged around the first delivery channel 11. The first pipeline assembly and the second pipeline assembly are respectively communicated with the first delivery channel 11 and the second delivery channel 12.
[0042] The mounting member 1 can be processed and formed by machining, 3D printing or other methods. As Figures 4 to 6 shown, the first delivery channel 11 and the second delivery channel 12 are both coaxially arranged with the mounting member 1, which can reduce the processing difficulty of the two. The height of the first delivery channel 11 can be greater than the height of the second delivery channel 12. The first pipeline assembly and the second pipeline assembly are respectively connected to the upper part of the first delivery channel 11 and the upper part of the second delivery channel 12. The first delivery channel 11 and the second delivery channel 12 are connected to the first pipeline assembly and the second pipeline assembly through the height difference, effectively utilizing the space inside the mounting member 1.
[0043] In addition, the processing difficulty of the second delivery channel 12 is relatively high. Especially in the machining process, the higher the height h of the second delivery channel 12, the easier it is to cause the inner wall of the second delivery channel 12 to be rough. The inner wall of the second delivery channel 12 will affect the stability of the air flow, and further affect the uniformity of the distribution of the process gas in the process chamber. In the prior art, in order to make the insulation distance reach 25 mm, the height h of the second delivery channel 12 also needs to reach 25 mm. As Figure 8As shown, the inclined setting of the pipeline body of the present application increases the insulation distance s, thus reducing the requirement for the height h of the second delivery channel 12. During the processing, the present application can reduce the roughness of the inner wall of the second delivery channel 12, thereby improving the uniformity of the distribution of the process gas in the process chamber. In a specific embodiment of the present application, the preset angle between the pipeline body and the plane where the electrode coil 6 is located is 45°, and the height h of the second delivery channel 12 only needs to be 16 mm to ensure that the insulation distance reaches 25 mm. Thus, the processing difficulty of the second delivery channel 12 is reduced. Of course, the preset angle between the pipeline body and the electrode coil 6 is not limited to 45°.
[0044] Optionally, the mounting member 1 includes two connection ports 13 respectively communicating with the first delivery channel 11 and the second delivery channel 12, and the two connection parts 21 are respectively connected to the two connection ports 13. As Figure 2 shown, the two connection ports 13 can be distributed along the direction parallel to the axis of the first delivery channel 11. When the process gas path structure is connected to the process chamber, the distance between the pipeline component close to the process chamber and the electrode coil 6 is not less than the insulation distance. Of course, the connection ports 13 can adopt other distribution methods, which are not limited herein. As Figure 5 shown, the two connection ports 13 both extend into the mounting member 1 along the direction perpendicular to the axial direction of the mounting member 1 and respectively communicate with the first delivery channel 11 and the second delivery channel 12. The extending direction of the connection ports 13 can be perpendicular to the outer surface of the mounting member 1, thus reducing the processing difficulty of the connection ports 13 on the mounting member 1. Of course, the user can also set the extending direction of the connection ports 13 according to needs, which is not limited herein.
[0045] In some embodiments, as Figure 2 shown, the mounting member 1 includes a sealing groove 14 arranged around each connection port 13, and a sealing ring 5 is arranged in the sealing groove 14. When the connection part 21 is connected to the mounting member 1, the sealing ring 5 will be extruded and deformed, thereby improving the sealing performance between the mounting member 1 and the connection part 21 and avoiding the leakage of process gas. In addition to the surface-to-surface fit between the mounting member 1 and the connection part 21 to achieve sealing, the sealing effect is further improved through the sealing ring 5, reducing the risk of process gas leakage. The sealing groove 14 can radially limit the sealing ring 5, reduce the movement of the sealing ring 5, and further reduce the wear of the sealing ring 5, prolonging the service life of the sealing ring 5.
[0046] Optionally, the connection part 21 and the mounting member 1 can be connected by bolts. The mounting member 1 further includes threaded holes 15 respectively arranged around the two connection ports 13, and the connection part 21 and the threaded holes 15 are connected by bolts. As Figure 2As shown, four threaded holes 15 are provided on the outer periphery of each connection port 13, and four through holes 23 are provided in the connection part 21, corresponding to the four threaded holes 15 respectively. Bolts pass through the through holes 23 and are connected to the four threaded holes 15, thereby fixedly connecting the connection part 21 and the mounting part 1. Bolt connection has the advantages of simple connection method and convenient maintenance. Of course, other connection methods can also be adopted between the connection part 21 and the mounting part 1, such as riveting, welding, etc., and the number of threaded holes 15 can also be set according to user needs, which is not limited here.
[0047] In some embodiments, each pipeline body includes a first connection pipe 22 and a process pipe 3, which are coaxially arranged, and one end of the process pipe 3 is fixedly connected to the first connection pipe 22; the first connection pipe 22 and the connection part 21 are integrally formed, and the axis of the first connection pipe 22 forms a preset angle with the electrode coil 6.
[0048] As Figure 3 and Figure 4 shown, the first connection pipe 22 and the connection part 21 are connected to form a first connection member 2. One end of the first connection member 2 close to the connection part 21 is provided with a first channel 24 perpendicular to the axis of the first conveying channel 11. When the first connection member 2 is connected to the mounting part 1, the first channel 24 is coaxially connected to the connection port 13 of the mounting part 1, reducing the resistance when the process gas passes through the connection between the mounting part 1 and the first connection member 2. A second channel 25 is provided in the first connection pipe 22 of the first connection member 2, and the second channel 25 is communicated with the first channel 24, and the included angle between the two is an obtuse angle. The setting method of the gas channel in the first connection member 2 can reduce the processing difficulty in the first connection member 2.
[0049] Optionally, in this embodiment, the two process pipes 3 can be connected to the first connection pipe 22 by welding. After the two pipeline components are processed, they are connected to the mounting part 1 through the connection part 21. The two pipeline components are assembled separately and will not interfere with each other. Moreover, it is not necessary to consider that the axial distance between the two pipeline components after assembly meets the welding process requirements, which can make the entire intake structure more compact. This scheme has simple welding, can achieve a higher degree of welding automation, and has a better welding effect.
[0050] Optionally, the pipeline body further includes a second connection pipe 41, the second connection pipe 41 is coaxially arranged with the process pipe 3 and is fixedly connected to the end of the process pipe 3 far from the first connection pipe 22; the pipeline component further includes a third connection pipe 42, and the third connection pipe 42 is used to connect the gas pipeline 7 for conveying the process gas, and the second connection pipe 41 and the third connection pipe 42 are integrally formed.
[0051] As Figure 2As shown, the second connecting pipe 41 and the third connecting pipe 42 are connected to form the second connecting member 4. The second channel 25 of the first connecting member 2, the process pipe 3, and the second connecting pipe 41 of the second connecting member 4 are coaxially connected. The process pipe 3 can be fixedly connected to the second connecting pipe 41 by welding. The third connecting pipe 42 is arranged parallel to the first channel 24 of the first connecting member 2, simplifying the structure of the pipeline assembly. An obtuse angle is formed between the first channel 24 and the second channel 25 of the first connecting member 2, and an obtuse angle is also formed between the second connecting pipe 41 and the third connecting pipe 42 of the second connecting member 4. Therefore, an acute angle is avoided in the gas flow path of the pipeline assembly, reducing the processing difficulty of each component in the pipeline assembly, and also reducing the resistance during the flow of the process gas and the energy loss. The two pipeline assemblies can have the same structure and size, and the two pipeline assemblies can be arranged in parallel, thus avoiding interference between the two pipeline assemblies. During the processing of the pipeline assembly, there is no need to consider whether interference occurs during the installation process, further reducing the processing difficulty.
[0052] In this application, the process gas path structure includes the mounting member 1, the first connecting member 2, the process pipe 3, and the second connecting member 4. The process gas path structure adopts a split structure, which can reduce the processing difficulty and improve the processing accuracy. Among them, the mounting member 1 and the first connecting member 2 fabricate the two corner positions of the gas channel on two workpieces respectively, making the gas channel easy to process and facilitating the adjustment of the angle of the gas channel corner position according to needs.
[0053] This application also provides a semiconductor process equipment, as Figure 9 and Figure 10 shown, including a process chamber, an electrode coil 6, and the process gas path structure in any one of the above embodiments. The mounting member 1 of the process gas path structure can be installed at the center of the top surface of the process chamber, and the pipeline body extends from the mounting member 1 to the edge of the top surface of the process chamber for connecting the gas pipeline 7 to the process chamber, so as to transport the process gas into the process chamber.
[0054] As Figure 9 and Figure 10 shown, a top cover 8 is provided on the top of the process chamber, and a nozzle 10 is provided at the center of the top cover 8. The process gas path structure is installed at the center of the top cover 8 through the nozzle 10. The mounting member 1 of the process gas path structure is connected to the nozzle 10, and the process gas enters the process chamber through the process gas path structure and the nozzle 10. An observation mechanism 9 for the process end node is connected above the mounting member 1 of the process gas path structure. The nozzle 10, the mounting member 1, and the observation mechanism 9 are arranged together to make the structure more compact and reduce the space occupied by the three.
[0055] The electrode coil 6 can be arranged around the mounting member 1 on the top surface of the process chamber. The electrode coil 6 is located below the pipeline body and is used to feed radio frequency, so as to ionize the process gas in the process chamber to generate plasma. There is a sufficient insulation distance between the electrode coil 6 and the process gas path structure to avoid radio frequency transmission into the process gas path structure and ensure the safety of the semiconductor process equipment. The distance between the electrode coil 6 and the process gas path structure is greater than or equal to the insulation distance. The insulation distance is related to the voltage of the electrode coil 6. The insulating medium between the process gas path structure and the electrode coil 6 is relatively complex, and the dielectric constant of this insulating medium can be determined according to experience. In a specific embodiment of the present application, the dielectric constant between the process gas path structure and the electrode coil 6 is not greater than 330 V / mm. For example, if the voltage of the electrode coil 6 is 6600 V, the insulation distance is at least 20 mm, which can effectively prevent the electrode coil 6 from conducting with the process gas path structure. In other specific embodiments, the user can select the size of the insulation distance according to the voltage of the electrode coil and the dielectric constant between the process gas path structure and the electrode coil 6, which is not limited here. The structures of other parts of the semiconductor process equipment can refer to the prior art and will not be elaborated here.
[0056] It can be understood that the above embodiments are only exemplary embodiments adopted to illustrate the principle of the present application. However, the present application is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present application, and these modifications and improvements are also regarded as the protection scope of the present application.
Claims
1. A process gas path structure, applied to semiconductor process equipment, the semiconductor process equipment comprising an electrode coil and a process chamber, characterized in that: The process gas path structure comprises a mounting member and a pipeline assembly, the pipeline assembly is connected to the process chamber through the mounting member, and the electrode coil is located between the pipeline assembly and the process chamber; The pipeline assembly includes a connecting portion and a pipeline body. The connecting portion is located at the first end of the pipeline body and is used to be connected to the mounting member. There is a preset angle between the axis of the pipeline body and the plane where the electrode coil is located to increase the distance between the pipeline body and the electrode coil.
2. The process gas path structure according to claim 1, characterized in that: The number of the pipeline assemblies is more than two, each of the pipeline assemblies is fixedly connected to the mounting member, and the preset angles between the axes of each pipeline body and the plane where the electrode coil is located are equal.
3. The process gas path structure according to claim 2, characterized in that: There are two pipeline assemblies, namely a first pipeline assembly and a second pipeline assembly. The mounting member includes a first delivery channel and a second delivery channel for connecting the interior of the process chamber. The second delivery channel is arranged around the first delivery channel. The first pipeline assembly and the second pipeline assembly are connected to the first delivery channel and the second delivery channel respectively.
4. The process gas path structure according to claim 3, characterized in that: The mounting member comprises two connection ports respectively connected to the first conveying channel and the second conveying channel, and the two connection parts are respectively connected to the two connection ports.
5. The process gas path structure according to any one of claims 2 to 4, characterized in that: Each of the pipeline bodies comprises a first connecting pipe and a process pipe, which are coaxially arranged, and one end of the process pipe is fixedly connected to the first connecting pipe; The first connecting tube and the connecting portion are integrally formed, and an axis of the first connecting tube forms the preset angle with the electrode coil.
6. The process gas path structure according to claim 5, characterized in that: The pipeline body further comprises a second connecting pipe, which is coaxially arranged with the process pipe and fixedly connected to an end of the process pipe away from the first connecting pipe; The pipeline assembly further includes a third connecting pipe, which is used to connect to a gas pipeline for conveying process gas, and the second connecting pipe and the third connecting pipe are integrally formed.
7. The process gas path structure according to claim 6, characterized in that: The third connecting pipe is arranged perpendicular to the axis of the first conveying channel.
8. The process gas path structure according to claim 7, characterized in that: The connecting portion has an air inlet arranged parallel to the third connecting pipe.
9. A semiconductor process equipment, characterized in that: It comprises a process chamber, an electrode coil, a gas pipeline and the process gas path structure according to any one of claims 1 to 8, wherein the process gas path structure is used to transport process gas into the process chamber by connecting the gas pipeline with the process chamber.
10. The semiconductor process equipment according to claim 9, characterized in that: The electrode coils are arranged around the mounting member at intervals, and the distance between the electrode coils and the process gas path structure is greater than or equal to the insulation distance.