Mixing pipe, manifold structure and semiconductor process equipment
By using a mixing tube composed of shape memory materials in the SACVD process, the shape of the airflow channel is adjusted to control the airflow, and the problems of unstable film morphology quality and inflexible morphology regulation are solved, and efficient and precise morphology control is achieved.
Patent Information
- Application Number
- CN202421416557.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-19
- Publication Date
- 2025-06-27
- Estimated Expiration
- 2034-06-19
AI Technical Summary
In the existing SACVD process, corrosion of the mixing tube causes unstable film morphology quality and inflexible morphology regulation, making it difficult to achieve efficient and precise morphology control.
The shape of the mixing tube composed of shape memory materials can be changed through operation to adjust the end angle of the airflow channel to flexibly adjust the airflow direction and flow rate to achieve efficient control of the film morphology.
Through the application of shape memory materials, morphological control with higher efficiency, greater flexibility and higher accuracy than replacement of blocking plates is achieved, reducing cost and reliability risks, while improving the uniformity and stability of the film morphology.
Smart Images
Figure CN223035912U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the field of semiconductor equipment, and particularly relates to a mixing tube, a manifold structure and a semiconductor process equipment. Background Art
[0002] In the prior art, during the SACVD (Sub-Atmospheric Chemical Vapor Deposition) process, since the process requires a large flow rate of the precursor to be introduced, a mixing tube is needed as a buffer between the inlet pipe and the process chamber to fully mix and homogenize the introduced gas and prevent the condensation of the introduced gas.
[0003] And since a large amount of the reaction gases (such as O3 and TEOS) are introduced through the mixing tube, O3 and TEOS will undergo redox reactions with the wall of the gas flow channel during the flow through the gas flow channel of the mixing tube, causing corrosion to it. On the one hand, it leads to particulate defects, and on the other hand, since the structure of the gas flow channel is changed, it will also affect the uniformity of the thin film deposited on the wafer, as Figure 1 and Figure 2 shown, the difference in the thin film uniformity before and after the corrosion of the mixing tube is large, resulting in unstable quality of the obtained thin film morphology.
[0004] Meanwhile, in the SACVD process, generally, the profile of the thin film obtained by the process is adjusted by replacing the face blocker for secondary gas mixing. This replacement process requires stopping the process, with low adjustment efficiency and low adjustment accuracy for the thin film profile.
[0005] Therefore, there is an urgent need for a method or structure that can improve the stability of the morphology quality obtained by the process and enhance the flexibility and control accuracy of morphology control.
[0006] It should be noted that the above introduction of the technical background is only for the convenience of clearly and completely explaining the technical solution of the present application and facilitating the understanding of those skilled in the art, and it cannot be considered that the above technical solutions are well-known to those skilled in the art just because these solutions are described in the background art part of the present application. Summary of the Utility Model
[0007] In view of the above-mentioned disadvantages of the prior art, the purpose of the present utility model is to provide a mixing tube, a manifold structure and a semiconductor process equipment, which are used to solve the problems of poor stability of the morphology quality formed by the SACVD process and inflexible morphology regulation in the prior art.
[0008] To achieve the above purpose and other related purposes, the present utility model provides the following technical solutions:
[0009] In a first aspect, the present utility model provides a mixing tube, the mixing tube includes more than two gas flow channels, and at least the material around the gas flow channels in the mixing tube is a shape memory material.
[0010] Optionally, more than two of the gas flow channels are spiral.
[0011] Optionally, the mixing tube includes a flange and a tube body. The flange is in the shape of a circular sheet, and the tube body is an open cylinder. The open cylinder includes an annular tube wall on the side and a bottom surface. The flange is sleeved on the opening edge of the open cylinder. The gas flow channel passes through the annular tube wall and communicates with the bottom surface. The material of the mixing tube corresponding to the length range where the projection of the gas flow channel on the central axis of the open cylinder is located is a shape memory material, and the projection length of the gas flow channel on the central axis of the open cylinder is at least 1 / 4 of the projection length of the annular tube wall on the central axis of the open cylinder.
[0012] Optionally, the shape memory material is a shape memory alloy, shape memory ceramic or shape memory polymer having a two-way memory effect or a full-range memory effect.
[0013] Optionally, the mixing tube further includes a first temperature control structure, and the first temperature control structure controls the temperature of the mixing tube. By changing the temperature of the mixing tube, the gas flow direction and / or gas flow rate of the gas flow channel can be changed.
[0014] Optionally, the first temperature control structure controls the temperature of the mixing tube to be 40°C - 80°C.
[0015] In a second aspect, the present utility model provides a manifold structure, the manifold structure includes a gas output manifold, a gas feedthrough, a needle valve manifold and a gas input manifold. The gas output manifold, the gas feedthrough, the needle valve manifold and the gas input manifold are connected in sequence, and the gas output manifold includes any one of the above-mentioned mixing tubes.
[0016] Optionally, when the mixing tube does not include a first temperature control structure, the manifold structure includes a second temperature control structure, and the second temperature control structure controls the temperature of the mixing tube. By changing the temperature of the mixing tube, the gas flow direction and / or gas flow rate of the gas flow channel can be changed.
[0017] In a third aspect, the present utility model provides a semiconductor process equipment, the semiconductor process equipment includes any one of the above-mentioned mixing tubes, and the semiconductor process equipment further includes an inlet pipe and a process chamber. The process chamber includes an air inlet, and the inlet pipe is communicated with the air inlet of the process chamber through the gas flow channel of the mixing tube.
[0018] Optionally, the semiconductor process equipment is a sub-atmospheric chemical vapor deposition equipment.
[0019] As described above, the mixing tube, the manifold structure and the semiconductor process equipment of the present utility model have the following beneficial effects:
[0020] In the present utility model, by setting the material of the mixing tube around the gas flow channel as a shape memory material, the shape of the gas flow channel of the mixing tube can be changed through operation, so that the end angle of the gas flow channel can be flexibly adjusted in real time to adjust the gas flow direction and gas flow rate entering the process chamber through the gas flow channel. It can achieve topography control with higher efficiency, stronger flexibility and higher precision than replacing the blocking plate, and also reduces the cost of fine-tuning control of the semiconductor structure topography and the reliability risk brought by replacing the blocking plate; at the same time, the structural changes caused by the corrosion of the mixing tube during the reaction can be corrected by adjusting the end angle of the gas flow channel, which is beneficial to improving the topography uniformity of the semiconductor structure obtained after the process and the stability of the topography quality;
[0021] In the present utility model, by using a spiral gas flow channel, the residence time of the gas in the mixing tube is prolonged, and combined with its spiral shape, the gas mixing effect is improved together. At the same time, it is more conducive to expanding the optional range of shape adjustment of the gas flow channel by the shape memory material, thereby further improving the regulation precision and flexibility of the formed thin film topography;
[0022] In the present utility model, by setting the material of the mixing tube corresponding to the length range of the projection of the gas flow channel on the central axis of the open cylinder as a shape memory material, the shape change of the gas flow channel can better adapt to the strain force of the surrounding material, reducing the risk of fracture caused by the large internal stress of the mixing tube due to the repeated change of the gas flow channel shape, and improving the service life and reliability of the mixing tube;
[0023] In the present utility model, by using a shape memory material with two-way memory effect or full-range memory effect, it can memorize more than two shapes, so as to realize the adjustment of different shapes of the gas flow channel and improve the flexibility of topography adjustment;
[0024] In the present utility model, by using a material with full-range memory effect, it can memorize multiple shapes, so as to realize the adjustment of different shapes of the gas flow channel and further improve the flexibility of topography adjustment;
[0025] In the present utility model, by setting the first temperature control structure, the temperature of the mixing tube is adjusted to obtain the shape corresponding to the shape memory material at the corresponding temperature, so as to adjust the shape of the gas flow channel, and finally realize the adjustment of the gas flow direction or gas flow rate of the gas flow channel;
[0026] The present utility model controls the temperature of the mixing tube to be 40°C - 80°C, ensuring that when the temperature of the mixing tube is adjusted, it will not have a significant impact on the temperature of the process chamber, enabling the overall process equipment to operate normally. Specifically, other suitable temperature control ranges can also be selected according to the requirements of the applied equipment. Description of the Drawings
[0027] Figure 1 It shows a comparison schematic diagram of the film morphologies obtained before and after the reaction gas corrosion of the first group of mixing tubes in the prior art.
[0028] Figure 2 It shows a comparison schematic diagram of the film morphologies obtained before and after the reaction gas corrosion of the second group of mixing tubes in the prior art.
[0029] Figure 3 It shows an exploded view schematic diagram of the structure of the reaction gas entering the process chamber with different air flow channel shapes of the mixing tube in the present utility model.
[0030] Figure 4 It shows a detailed enlarged schematic diagram of the mixing tube in an example of the present utility model.
[0031] Figure 5 It shows an exploded view schematic diagram of the structure of the reaction gas entering the process chamber in the prior art.
[0032] Figure 6 It shows an exploded view schematic diagram of the structure of the reaction gas introduced into the manifold structure in the present utility model.
[0033] Description of Component Labels
[0034] 1. Wafer; 2. Mixing insert; 3. Mixing tube; 31. Flange; 32. Annular tube wall; 33. Air flow channel; 4. Gas box; 5. Blocking plate; 6. Spray head; 7. Reaction gas; 81. First direction; 82. Second direction; 83. Third direction; 9. Manifold structure; 91. Gas output manifold; 92. Gas feedthrough; 93. Needle valve manifold; 94. Gas input manifold. Detailed Embodiments
[0035] The following specific examples illustrate the embodiments of the present utility model. Those skilled in the art can easily understand the other advantages and effects of the present utility model from the content disclosed in this specification. The present utility model can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present utility model.
[0036] When describing the embodiments of the present utility model in detail, for the convenience of description, the schematic diagrams showing the device structure may be enlarged locally in a non-general proportion, and the schematic diagrams are only examples and should not limit the scope of protection of the present utility model herein. In addition, in actual production, three-dimensional spatial dimensions including length, width, and depth should be included.
[0037] For convenience of description, spatial relationship terms such as "below", "beneath", "lower", "under", "above", "on" etc. may be used herein to describe the relationship of one element or feature shown in the drawings with other elements or features. It will be understood that these spatial relationship terms are intended to encompass other directions of the device in use or operation in addition to the directions depicted in the drawings.
[0038] In the context of the present application, the structure in which the first feature is "above" the second feature may include an embodiment where the first and second features are formed in direct contact, and may also include an embodiment where additional features are formed between the first and second features, such that the first and second features may not be in direct contact.
[0039] It should be noted that the illustrations provided in this embodiment only schematically illustrate the basic concept of the present utility model. Therefore, only the components related to the present utility model are shown in the illustrations, rather than being drawn according to the number, shape, and size of the components in actual implementation. The type, quantity, and ratio of each component in actual implementation may be arbitrarily changed, and the component layout type may also be more complex.
[0040] As Figure 3 - Figure 4 shown, the present utility model provides a mixing tube 3, the mixing tube 3 includes more than two gas flow channels 33, and at least the material around the gas flow channels 33 in the mixing tube 3 is a shape memory material.
[0041] In the prior art, the mixing tube 3 used in SACVD (Sub-Atmospheric Chemical Vapor Deposition) equipment needs to introduce a large amount of reaction gases 7 such as O3 and TEOS, and O3 and TEOS will corrode the gas flow channels 33 of the mixing tube 3, resulting in a change in the structure of the gas flow channels 33, thereby affecting the uniformity of the thin film deposited on the wafer 1 by the SACVD process and causing a change, such as Figure 1 and Figure 2The figure shows a comparison chart of the film profiles of two groups of mixing tubes 3 before and after corrosion. In the figure, the legend corresponds to the thickness value (in angstroms) of the film on the wafer 1 of the same color. Range = (the height of the highest point on the film surface - the height of the lowest point on the film surface) / (the average height of the film), Avg = the average height of the film, 3Sig = the variance of the film surface height. It can be seen that the morphological differences of the two groups of mixing tubes 3 before and after corrosion are relatively large, and the quality of the obtained film morphology is unstable. At the same time, in the SACVD process, as Figure 5 shown, the reaction gas 7 sequentially passes through the mixing insert 2, mixing tube 3, gas box 4, face blocker 5, and face plate 6 of the SACVD equipment for preliminary mixing, secondary mixing, and homogenization treatment respectively, and finally enters the process chamber; generally, the film morphology obtained by adjusting the process is adjusted by replacing the face blocker 5 for secondary gas mixing. However, the process needs to be stopped during the process of replacing the face blocker 5, resulting in a reduction in the overall efficiency; moreover, when adjusting the film morphology by replacing the face blocker 5, the adjustment accuracy is relatively low, the adjustment flexibility is poor, and it is difficult to achieve real-time precise and fine morphology adjustment.
[0042] In the present utility model, the material of the mixing tube 3 surrounding the gas flow channel 33 is a shape memory material, so that the shape of the gas flow channel 33 of the mixing tube 3 can be changed through operation, thereby the end angle of the gas flow channel 33 can be flexibly adjusted in real time to adjust the gas flow direction and gas flow velocity entering the process chamber through the gas flow channel 33. It can achieve morphology control with higher efficiency, stronger flexibility, and higher precision than replacing the face blocker 5, and also reduces the cost of fine-tuning control of the semiconductor structure morphology and the reliability risk brought by replacing the face blocker 5; at the same time, the structural changes caused by the corrosion of the mixing tube 3 during the reaction can be corrected by adjusting the end angle of the gas flow channel 33, which is beneficial to improving the uniformity of the semiconductor structure morphology and the stability of the morphology quality obtained after the process.
[0043] Specifically, as Figure 3As shown, the shape of the gas flow channel 33 can be adjusted so that the gas flow direction of the reaction gas 7 after passing through the mixing tube 3 is different first directions 81, second directions 82 or third directions 83 in the figure, thereby realizing three different gas flow directions and / or gas flow velocities entering the process chamber after passing through the gas box 4, the face blocker 5, and the face plate 6, and finally obtaining three different film morphologies. The three cases shown in the figure are only examples. In actual operation, multiple different gas flow channel 33 directions can be set to obtain multiple different film morphologies. At the same time, it is also possible to control the setting of different gas flow channel 33 directions at different time nodes of the process, so as to realize real-time, precise and flexible control of the final film morphology.
[0044] In one embodiment, as Figure 4 shown, more than two of the gas flow channels 33 are spiral.
[0045] The utility model prolongs the residence time of the gas in the mixing tube 3 by using the spiral gas flow channel 33, and cooperates with its spiral shape to jointly improve the gas mixing effect. At the same time, it is more conducive to expanding the optional range of the shape adjustment of the shape memory material for the gas flow channel 33, thereby further improving the control accuracy and flexibility of the formed film morphology.
[0046] Specifically, the gas flow channel can also be any other suitable shape.
[0047] In one embodiment, as Figure 4 shown, the mixing tube 3 includes a flange 31 and a tube body. The flange 31 is in the shape of a circular ring sheet, and the tube body is an open cylinder. The open cylinder includes an annular tube wall 32 on the side and a bottom surface (not shown in the figure). The flange 31 is sleeved on the opening edge of the open cylinder. The gas flow channel 33 passes through the annular tube wall 32 and communicates with the bottom surface. The material of the mixing tube 3 corresponding to the length range where the projection of the gas flow channel 33 on the central axis of the open cylinder is located is a shape memory material. The projection length of the gas flow channel 33 on the central axis of the open cylinder is at least 1 / 4 of the projection length of the annular tube wall 32 on the central axis of the open cylinder.
[0048] The utility model makes the shape change of the gas flow channel 33 more adaptable to the strain force of the surrounding material by setting the material of the mixing tube 3 corresponding to the length range where the projection of the gas flow channel 33 on the central axis of the open cylinder is located as a shape memory material, reduces the risk of fracture caused by the large internal stress of the mixing tube 3 due to the repeated shape change of the gas flow channel 33, and improves the service life and reliability of the mixing tube 3.
[0049] Specifically, the shape memory material can also be applied to any other suitable position of the mixing tube 3.
[0050] In one embodiment, the shape memory material is a shape memory alloy, shape memory ceramic or shape memory polymer having a two-way memory effect or a full-range memory effect.
[0051] By using a shape memory material having a two-way memory effect or a full-range memory effect, the present utility model can memorize more than two shapes, thereby realizing the adjustment of different shapes of the air flow channel 33 to improve the flexibility of topography adjustment.
[0052] Preferably, the shape memory material is a material having a full-range memory effect.
[0053] By using a material having a full-range memory effect, the present utility model can memorize multiple shapes, thereby realizing the adjustment of different shapes of the air flow channel 33 to further improve the flexibility of topography adjustment.
[0054] In one embodiment, the shape memory material is a shape memory alloy containing two or more metal elements.
[0055] In one embodiment, the shape memory material is one of nickel-cadmium alloy, nickel-titanium alloy, cadmium-titanium alloy or nickel-chromium-titanium alloy.
[0056] In one embodiment, the mixing tube 3 further includes a first temperature control structure that controls the temperature of the mixing tube 3. By changing the temperature of the mixing tube 3, the air flow direction and / or air flow rate of the air flow channel 33 can be changed.
[0057] By providing the first temperature control structure, the present utility model adjusts the temperature of the mixing tube 3 to obtain the shape corresponding to the shape memory material at the corresponding temperature, thereby adjusting the shape of the air flow channel 33 and finally realizing the adjustment of the air flow direction or air flow rate of the air flow channel 33.
[0058] Specifically, a structure for adjusting other driving variables (such as electricity, light, magnetism, stress, chemical substances, etc.) can also be provided to adjust the shape of the air flow channel 33 and used in combination with the driving variables to which the shape memory material is sensitive.
[0059] In one embodiment, the first temperature control structure controls the temperature of the mixing tube 3 to be 40°C - 80°C.
[0060] Since the mixing tube 3 is adjacently connected to the process chamber where the process is carried out, and the temperature of the process chamber needs to be maintained at about 75 °C, the present utility model controls the temperature of the mixing tube 3 to be 40 °C - 80 °C, ensuring that the temperature adjustment of the mixing tube 3 will not have a significant impact on the temperature of the process chamber, enabling the overall process equipment to operate normally. Specifically, other appropriate temperature control ranges can also be selected according to the requirements of the applied equipment.
[0061] As Figure 6 shown, the present utility model also provides a manifold structure 9, which includes a gas output manifold 91 (gas output manifold), a gas feedthrough 92 (gas feedthrough), a needle valve manifold 93 (needle valve manifold), and a gas input manifold 94 (gas input manifold). The gas output manifold 91, the gas feedthrough 92, the needle valve manifold 93, and the gas input manifold 94 are connected in sequence, and the mixing tube 3 of any one of the above is included in the gas output manifold 91.
[0062] In one embodiment, as Figure 6 shown, the reaction gas 7 sequentially passes through the gas input manifold 94 (gas input manifold), the needle valve manifold 93 (needle valve manifold), the gas feedthrough 92 (gas feedthrough), and the mixing insert 2 (mixing insert) and the mixing tube 3 (mixing tube) of the gas output manifold 91, and then enters the gas box 4 (gas box), the face blocker 5 (face blocker), and the face plate 6 (face plate) in sequence for primary mixing, secondary mixing, and homogenization treatment respectively, and finally enters the process chamber.
[0063] In one embodiment, when the mixing tube 3 does not include the first temperature control structure, the manifold structure 9 includes a second temperature control structure, and the second temperature control structure controls the temperature of the mixing tube 3. By changing the temperature of the mixing tube 3, the air flow direction and / or the air flow rate of the air flow channel 33 can be changed.
[0064] Specifically, the first temperature control structure and / or the second temperature control structure can be various suitable temperature control structures such as a temperature-controlled heating tape, a fluid temperature control pipeline system, etc.
[0065] The present utility model further provides a semiconductor process equipment, which includes the mixing tube as described in any one of the above, and also includes an inlet pipe and a process chamber. The process chamber includes an air inlet, and the inlet pipe is communicated with the air inlet of the process chamber through the air flow channel of the mixing tube.
[0066] In one embodiment, the semiconductor process equipment is a sub-atmospheric chemical vapor deposition (SACVD) equipment.
[0067] Since the structure of the mixing tube in the SACVD equipment of the present utility model will have an obvious influence on the morphology of the formed thin film, the shape of the air flow channel of the mixing tube of the SACVD equipment can be set as a shape memory material to adjust the shape of the air flow channel of the mixing tube, so as to adjust the morphology of the thin film. Specifically, the solution of the present utility model can also be applied to the mixing tubes in other equipment where the structure has an influence on the obtained morphology, and all are within the protection scope of the present utility model.
[0068] In one embodiment, the semiconductor process equipment is a sub-atmospheric chemical vapor deposition equipment for performing HARP (High Aspect Ratio Process).
[0069] In summary, for the mixing tube, manifold structure and semiconductor process equipment of the present utility model, by setting the material of the mixing tube around the air flow channel as a shape memory material, the shape of the air flow channel of the mixing tube can be changed through operation, so as to adjust the end angle of the air flow channel, and then adjust the air flow direction and air flow velocity entering the process chamber. Finally, without replacing components, the flexible control of the morphology of the semiconductor structure obtained after the process is realized, the morphology control efficiency and morphology control precision are improved, the cost of controlling the morphology of the semiconductor structure and the reliability risk brought by replacing components are reduced, and at the same time, it is beneficial to improve the uniformity of the morphology of the semiconductor structure obtained after the process and the stability of the morphology quality.
[0070] Therefore, the present utility model effectively overcomes various disadvantages in the prior art and has high industrial utilization value.
[0071] The above embodiments only illustrate the principle and its effects of the present utility model, rather than limiting the present utility model. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present utility model. Therefore, all equivalent modifications or changes completed by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed by the present utility model should still be covered by the claims of the present utility model.
Claims
1. A mixing tube, characterized in that: The mixing tube comprises more than two air flow channels, and at least the material surrounding the air flow channels in the mixing tube is a shape memory material.
2. The mixing tube according to claim 1, characterized in that: More than two of the air flow channels are spiral shaped.
3. The mixing tube according to claim 1 or 2, characterized in that: The mixing tube includes a flange and a tube body, the flange is in the shape of a circular ring, the tube body is an open cylinder, the open cylinder includes a side annular tube wall and a bottom surface, and the flange is sleeved on the opening edge of the open cylinder; the airflow channel passes through the annular tube wall and is connected to the bottom surface, the material of the mixing tube corresponding to the length range of the projection of the airflow channel on the central axis of the open cylinder is a shape memory material, and the projection length of the airflow channel on the central axis of the open cylinder is at least 1 / 4 of the projection length of the annular tube wall on the central axis of the open cylinder.
4. The mixing tube according to claim 1, characterized in that: The shape memory material is a shape memory alloy, shape memory ceramic or shape memory polymer having a two-way memory effect or a full-way memory effect.
5. The mixing tube according to claim 1, characterized in that: The mixing tube further comprises a first temperature control structure, which controls the temperature of the mixing tube. By changing the temperature of the mixing tube, the airflow direction and / or airflow flow rate of the airflow channel can be changed.
6. The mixing tube according to claim 5, characterized in that: The first temperature control structure controls the temperature of the mixing tube to be 40°C-80°C.
7. A manifold structure, characterized in that: The manifold structure includes a gas output manifold, a gas feedthrough, a needle valve manifold and a gas input manifold. The gas output manifold, the gas feedthrough, the needle valve manifold and the gas input manifold are connected in sequence. The gas output manifold includes the mixing tube described in any one of claims 1 to 6.
8. The manifold structure according to claim 7, characterized in that: When the mixing tube does not include a first temperature control structure, the manifold structure includes a second temperature control structure, and the second temperature control structure controls the temperature of the mixing tube. By changing the temperature of the mixing tube, the airflow direction and / or airflow flow rate of the airflow channel can be changed.
9. A semiconductor process equipment, characterized in that: The semiconductor process equipment includes the mixing tube described in any one of claims 1-6, and the semiconductor process equipment also includes an air inlet pipe and a process chamber, the process chamber includes an air inlet, and the air inlet pipe is connected to the air inlet of the process chamber through the air flow channel of the mixing tube.
10. The semiconductor process equipment according to claim 9, characterized in that: The semiconductor process equipment is a sub-atmospheric pressure chemical vapor deposition equipment.