Detecting device based on silicon-based integrated chip

Abstract

The utility model discloses a detection device based on a silicon-based integrated chip, which comprises the silicon-based integrated chip, one end of the silicon-based integrated chip is connected with an optical fiber array, and the silicon-based integrated chip is provided with a first branch waveguide structure, a second branch waveguide structure and two photoelectric detectors. The first branch waveguide structure comprises an input branch IN, a first output branch OUT1 and a second output branch OUT2, the second branch waveguide structure comprises a first input port IN1, a second input port IN2 and two output ports, and the two output ports are connected with the two photoelectric detectors respectively; the first output branch OUT1 of the first sub-waveguide structure is connected with the first input port IN1 of the second sub-waveguide structure. Compared with the prior art, a chip and a device are combined, the integration level is high, the debugging method is simple and effective, and batch production is facilitated; integration is adopted, the overall size is reduced, and the application range of the optical device is widened.

Description

Technical Field

[0001] The utility model relates to the technical field of optoelectronic integrated devices, and particularly relates to a detection device based on a silicon-based integrated chip. Background Art

[0002] With the continuous development of laser technology, fields such as optical communication, lidar, and laser sensing have become the most common scenarios for laser applications. Among them, optical devices are the most important part of the entire system. However, as the complexity of the system increases, more and more devices are used. Subsequently, the interconnection between devices and the large volume of the entire system limit the product engineering and the expansion of usage scenarios. At the same time, the production efficiency of the product is also relatively complex and low.

[0003] At the same time, beam splitting and detection are the most useful functions in optical communication systems. However, currently, mainly discrete devices are used. Especially for non-uniform beam splitting and n×n beam splitting devices, the fused biconical taper technology is mainly used at present, and the production efficiency is low; while the connection between the photodetector PD and the beam splitting device is mainly by fusion splicing, which involves redundant optical fiber processing and low production efficiency, and has a strong dependence on personnel production control.

[0004] However, with the continuous development of photon integration technology, silicon photon integrated devices have attracted much attention due to their advantages such as high integration and easy batch production. Therefore, in view of the problems in the above related technologies, the present invention proposes a solution based on silicon photon integration technology to solve the problem of separating beam splitting and detection. Content of the Utility Model

[0005] The purpose of the utility model is to propose a detection device based on a silicon-based integrated chip in view of the complex connection, large volume, small applicable range, complex production and low production efficiency of existing optical devices.

[0006] In order to achieve the above object, the utility model adopts the following technical scheme:

[0007] A detection device based on a silicon-based integrated chip, comprising a silicon-based integrated chip, one end of the silicon-based integrated chip is connected with an optical fiber array, and a first beam splitting waveguide structure, a second beam splitting waveguide structure and two photodetectors are arranged on the silicon-based integrated chip; the first beam splitting waveguide structure includes an input branch IN, a first output branch OUT1 and a second output branch OUT2, the second beam splitting waveguide structure includes a first input port IN1, a second input port IN2 and two output ports, and the two output ports are respectively connected with the two photodetectors;

[0008] The first output branch OUT1 of the first beam splitting waveguide structure is connected with the first input port IN1 of the second beam splitting waveguide structure;

[0009] The input branch IN of the first optical waveguide structure and the second input port IN2 of the second optical waveguide structure are respectively connected to the optical fibers of the fiber array as input ports, and the second output branch OUT2 of the first optical waveguide structure is connected to an external device as an output port.

[0010] As a further preference of the present utility model, the silicon-based integrated chip and the fiber array are adhesively connected through a refractive index matching adhesive. The refractive index matching adhesive uses an ultraviolet adhesive. After coating the ultraviolet adhesive, curing can be completed by turning on an ultraviolet lamp.

[0011] As a further preference of the present utility model, the first optical waveguide structure is set as a 1×2 non-uniform optical waveguide structure, and the second optical waveguide structure is set as a 2×2 uniform optical waveguide structure. The 1×2 non-uniform optical waveguide structure has an adjustable splitting ratio; the 2×2 uniform optical waveguide structure can achieve a 50:50 splitting output.

[0012] As a further preference of the present utility model, both the first optical waveguide structure and the second optical waveguide structure are made of silica-based materials.

[0013] As a further preference of the present utility model, the photodetector is a photodetector made of a doped silicon or germanium material system.

[0014] As a further preference of the present utility model, the fiber array includes three optical fibers, and the spacing between the three optical fibers is adjustable.

[0015] As a further preference of the present utility model, a fixing groove is provided on the side of the silicon-based integrated chip close to the fiber array for placing the fiber array. A cover plate is provided above the fixing groove and is adhesively fixed to the silicon-based integrated chip to protect the fiber array.

[0016] As a further preference of the present utility model, the fixing groove is set as a V-shaped groove or a U-shaped groove, and the fixing groove is made of silicon-based or glass-based materials.

[0017] As a further preference of the present utility model, the second output branch OUT2 of the first optical waveguide structure is connected to an optical power meter.

[0018] As a further preference of the present utility model, the two photodetectors are respectively connected to a picoammeter for detecting current.

[0019] A detection device based on a silicon-based integrated chip proposed by the present utility model has the following beneficial effects compared with the prior art:

[0020] 1. The present utility model combines a chip with a device, has a high integration level, a simple and effective debugging method, and is conducive to mass production;

[0021] 2. By adopting integration, the overall volume is reduced, and the applicable range of optical devices is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 is a schematic structural diagram of a detection device based on a silicon-based integrated chip according to the present utility model;

[0023] Figure 2 is a schematic structural diagram of the first optical waveguide structure;

[0024] Figure 3 is a schematic structural diagram of the second optical waveguide structure;

[0025] Figure 4 is a schematic diagram of the positional relationship between the fiber array and the silicon-based integrated chip.

[0026] The meanings of the reference numerals in the drawings: 1. Silicon-based integrated chip, 2. Fiber array, 3. Refractive index matching glue, 11. First optical waveguide structure, 12. Second optical waveguide structure, 4. Photoelectric detector, 5. Fixed groove, 6. Cover plate. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0027] The present utility model will be specifically introduced below in conjunction with the accompanying drawings and specific embodiments.

[0028] Embodiment 1: In combination with Figures 1-4 , a silicon-based beam splitting and detection integrated chip and device, including a silicon-based integrated chip 1, one end of the silicon-based integrated chip 1 is connected to a fiber array 2, and a first optical waveguide structure 11, a second optical waveguide structure 12 and two photoelectric detectors 4 are arranged on the silicon-based integrated chip 1; the first optical waveguide structure 11 includes an input branch IN, a first output branch OUT1 and a second output branch OUT2, the second optical waveguide structure 12 includes a first input port IN1, a second input port IN2 and two output ports, and the two output ports are respectively connected to the two photoelectric detectors 4; the first output branch OUT1 of the first optical waveguide structure 11 is connected to the first input port IN1 of the second optical waveguide structure 12; the input branch IN of the first optical waveguide structure 11 and the second input port IN2 of the second optical waveguide structure 12 are respectively connected to the optical fibers of the fiber array 2 as input ports, and the second output branch OUT2 of the first optical waveguide structure 11 is connected to an external device as an output port.

[0029] The optical fiber array 2 can be a three-core optical fiber array. The optical fiber array 2 includes three optical fibers, and the spacing between the three optical fibers is adjustable. A fixing groove 5 is provided on one side of the silicon-based integrated chip 1 close to the optical fiber array 2 for placing the optical fiber array 2. A cover plate 6 is provided above the fixing groove 5 and is adhesively fixed to the silicon-based integrated chip 1 to protect the optical fiber array 2. The fixing groove 5 is set as a V-shaped groove or a U-shaped groove, and the fixing groove 5 is made of silicon-based or glass-based material. The silicon-based integrated chip 1 and the optical fiber array 2 are adhesively connected through a refractive index matching adhesive 3, and the refractive index matching adhesive 3 is an ultraviolet adhesive. After coating the ultraviolet adhesive, curing can be completed by turning on the ultraviolet lamp.

[0030] The first optical waveguide splitting structure 11 is set as a 1×2 non-uniform optical waveguide splitting structure, and the second optical waveguide splitting structure 12 is set as a 2×2 uniform optical waveguide splitting structure. For the 1×2 non-uniform optical waveguide splitting structure, the splitting ratio is adjustable; the 2×2 uniform optical waveguide splitting structure can achieve a 50:50 splitting output.

[0031] The photodetector 4 is made of a doped silicon or germanium material system. The second output branch OUT2 of the first optical waveguide splitting structure 11 is connected to an optical power meter. The two photodetectors 4 are respectively connected to a picoammeter for detecting current.

[0032] Embodiment 2: The silicon-based integrated chip 11 includes a 1×2 non-uniform optical splitter structure with a splitting ratio of 5%:95%, a 2×2 uniform optical splitter structure with a splitting ratio of 50%:50%, and two photodetector 4PD structures. Among them, the 5% splitting waveguide ratio of the 1×2 non-uniform optical splitter structure is connected to one input end of the 2×2 uniform optical splitter structure; the two 50% output ports of the 2×2 uniform optical splitter structure are aligned with the two photodetectors 4 one by one.

[0033] Reduce the steps of conventional detector coupling;

[0034] 1×2 non-uniform optical splitter structure: One input end distributes the optical signal to two output ends, and the splitting ratio can be adjusted according to needs. This structure can be used for the distribution and routing of optical signals.

[0035] 2×2 uniform optical splitter structure: Two input and two output structures, and one of the input structures is connected to the 5% structure waveguide in the 1×2 non-uniform optical splitter structure.

[0036] The input end of the 1×2 non-uniform optical splitter structure, the 95% output end, and one input end of the 2×2 uniform optical splitter structure are located at the same end, and the spacing between the three waveguides is evenly divided, usually with a spacing of 250 μm; it is used to achieve complex optical signal distribution and routing, and is suitable for application scenarios that require efficient distribution of optical signals between different channels.

[0037] Two 50% ports of the 2x2 optical power splitter structure are aligned with two photodetectors 4 one by one to achieve mixing and detection of two signals. According to the principle of balanced detection, data processing of the two signals can be realized.

[0038] The foregoing has shown and described the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the above embodiments do not limit the present invention in any form. Any technical solutions obtained by means of equivalent replacement or equivalent transformation fall within the protection scope of the present invention.

Claims

1. A detection device based on a silicon-based integrated chip, characterized in that: It comprises a silicon-based integrated chip, one end of which is connected to an optical fiber array, and a first sub-waveguide structure, a second sub-waveguide structure and two photodetectors are arranged on the silicon-based integrated chip; the first sub-waveguide structure comprises an input branch IN, a first output branch OUT1 and a second output branch OUT2, the second sub-waveguide structure comprises a first input port IN1, a second input port IN2 and two output ports, and the two output ports are respectively connected to the two photodetectors; The first output branch OUT1 of the first branch waveguide structure is connected to the first input port IN1 of the second branch waveguide structure; The input branch IN of the first sub-waveguide structure and the second input port IN2 of the second sub-waveguide structure are respectively connected to the optical fiber of the optical fiber array as input ports, and the second output branch OUT2 of the first sub-waveguide structure is connected to an external device as an output port.

2. The detection device based on silicon-based integrated chip according to claim 1, characterized in that: The silicon-based integrated chip and the optical fiber array are bonded and connected by refractive index matching glue, and the refractive index matching glue is ultraviolet glue.

3. The detection device based on silicon-based integrated chip according to claim 1, characterized in that: The first waveguide structure is configured as a 1-to-2 non-equal waveguide structure, and the second waveguide structure is configured as a 2-to-2 equal waveguide structure.

4. The detection device based on silicon-based integrated chip according to claim 3, characterized in that: The first sub-waveguide structure and the second sub-waveguide structure are both made of silicon dioxide-based materials.

5. The detection device based on silicon-based integrated chip according to claim 1, characterized in that: The photoelectric detector is made of a doped silicon or germanium material system.

6. The detection device based on silicon-based integrated chip according to claim 1, characterized in that: The optical fiber array includes three optical fibers, and the intervals between the three optical fibers are adjustable.

7. The detection device based on silicon-based integrated chip according to claim 1, characterized in that: A fixing groove is arranged on one side of the silicon-based integrated chip close to the optical fiber array for placing the optical fiber array. A cover plate is arranged above the fixing groove and fixed on the silicon-based integrated chip by gluing for protecting the optical fiber array.

8. The detection device based on silicon-based integrated chip according to claim 7, characterized in that: The fixing groove is configured as a V-shaped groove or a U-shaped groove, and the fixing groove is made of a silicon base or a glass base.

9. The detection device based on silicon-based integrated chip according to claim 1, characterized in that: The second output branch OUT2 of the first branch waveguide structure is connected to an optical power meter.

10. The detection device based on silicon-based integrated chip according to claim 1, characterized in that: The two photoelectric detectors are respectively connected to a picoammeter for detecting current.

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