Wafer bonding system

Abstract

The utility model relates to a wafer bonding system, and belongs to the technical field of semiconductor devices. The wafer bonding system comprises a plurality of bonding modules, a transfer channel, a wafer loading and unloading area, a pre-positioning module, a cooling module, a plasma activation module and a cleaning module, wherein the plurality of bonding modules, the wafer loading and unloading area, the pre-positioning module, the cooling module, the plasma activation module and the cleaning module are respectively arranged at two sides of the transfer channel. Not only can wafer thermocompression bonding, plasma activation direct bonding and anodic bonding processes be supported at the same time, but also the layout design saves space, and flexible adjustment can be conveniently carried out according to production requirements; the single carrying robot reciprocates in the transfer channel along the linear guide rail, efficient carrying of wafers is achieved, the equipment cost and energy consumption and human input in the operation process are reduced, the upper wafer, the lower wafer and the bonded wafers can be managed in a centralized mode in the wafer feeding and discharging area, the operation process is simplified, and the management cost is reduced.

Description

Technical Field

[0001] The utility model relates to a wafer bonding system, belonging to the technical field of semiconductor devices. Background Art

[0002] In the field of semiconductor manufacturing, the precise matching and efficient transfer between wafers and chucks are important bases for realizing large-scale automated production. A known bonding equipment layout method can, to a certain extent, achieve the full-process automated processing of wafers from cleaning, pre-positioning to bonding and cooling. However, there are still some disadvantages in its design and implementation process: First, in the traditional layout method, each functional module is relatively independent and scattered, resulting in a large overall floor area of the equipment and low space utilization rate. At the same time, it is difficult to flexibly adjust according to production requirements; the wafer handling and chuck handling are respectively performed by different robots, which not only increases the purchase and maintenance costs of the robots, but also causes waste of resources (such as robot working hours, energy, etc.). In addition, in this layout method, the wafer is first positioned by the chuck outside the chamber, and then the chuck together with the wafer is transported into the chamber for subsequent operations such as bonding. During this process, the multiple transports and movements of the chuck not only increase the mechanical linkage complexity between the devices, but also introduce the risk of decreased positioning accuracy and deviation caused by mechanical vibration, wear or cumulative positioning error, directly affecting the yield of the final product.

[0003] The above information disclosed in this background art section is only used to understand the background art of the inventive concept of the utility model, and therefore, it may include information that does not constitute the prior art. Summary of the Utility Model

[0004] The purpose of the utility model is to provide a new technical solution to improve or solve the technical problems existing in the prior art as described above.

[0005] The technical solution provided by the utility model is as follows: A wafer bonding system includes a plurality of bonding modules, a transfer channel, a wafer loading and unloading area, a pre-positioning module, a cooling module, a plasma activation module, and a cleaning module. The plurality of bonding modules, the wafer loading and unloading area, the pre-positioning module, the cooling module, the plasma activation module, and the cleaning module are distributed around the transfer channel;

[0006] Bonding equipment is provided in each of the bonding modules;

[0007] A linear guide rail is provided in the transfer channel, and a handling robot is provided on the linear guide rail. The handling robot can reciprocally move along the linear guide rail to realize the transfer of the wafer;

[0008] The wafer loading and unloading area is used for the loading, unloading of wafers and the storage of bonded finished products;

[0009] The pre-positioning module is used to preliminarily correct the orientation of the wafer, reduce the deviation caused by the position change during the handling process, and ensure that the wafer can be accurately docked in the subsequent bonding process;

[0010] The cooling module is used to control the temperature of the wafer during or after the wafer bonding process, so that the wafer becomes room temperature for subsequent production processes;

[0011] The plasma activation module is used to perform plasma activation treatment on the surface of the wafer;

[0012] The cleaning module is used to clean the surface of the wafer.

[0013] The technical solution provided by the present utility model has the following beneficial effects compared with the prior art: The wafer bonding system of the present utility model not only supports multiple processes such as wafer thermocompression bonding, plasma-activated direct bonding, and anodic bonding, but also its compact layout design greatly saves space resources and is convenient for flexible adjustment according to production needs; By using a single handling robot to reciprocate along the linear guide rail in the transfer channel, efficient handling of the wafer is achieved, reducing equipment costs and energy consumption and labor input during operation; While improving the wafer alignment accuracy, the wafer loading and unloading area can centrally manage the upper wafer, lower wafer, and bonded wafer, which not only simplifies the operation process but also greatly reduces the management cost.

[0014] Based on the above technical solution, the present utility model can also be improved as follows.

[0015] Further, there are two bonding modules, namely the first bonding module and the second bonding module. The wafer loading and unloading area, pre-positioning module, cooling module, plasma activation module, and cleaning module are arranged side by side on one side of the transfer channel, and the first bonding module and the second bonding module are arranged side by side on the other side of the transfer channel.

[0016] Further, there are three bonding modules, namely the first bonding module, the second bonding module, and the third bonding module. The first bonding module, the second bonding module, the third bonding module, the wafer loading and unloading area, the pre-positioning module, the cooling module, the plasma activation module, and the cleaning module are arranged around the transfer channel.

[0017] The beneficial effect of the above further improvement: Since the anodic bonding method requires two-step bonding, by setting three bonding modules, one of the bonding modules is specifically used for the first step of anodic bonding, so that the system can perform other bonding processes simultaneously, improving production efficiency.

[0018] Further, the wafer loading and unloading area includes an upper wafer storage module, a lower wafer storage module, and a bonded product storage module.

[0019] The above-mentioned further beneficial effects: By classifying and storing wafers according to different states (upper wafer, lower wafer, bonded finished product), each module operates independently without interference, ensuring the smooth flow of wafers from warehousing to outbound, and then to the storage of final products, thus improving the overall production efficiency.

[0020] Furthermore, the pre-positioning module includes a positioning device and a detection device. The positioning device is used to perform preliminary positioning on the wafer, and the detection device is used to detect the direction and position deviation of the wafer, and adjust the positioning device according to the detection results to correct the direction and position of the wafer.

[0021] The above-mentioned further beneficial effects: Before wafer bonding, pre-positioning is a crucial step because when the wafer is taken out of the wafer cassette and transported, its position and direction may change due to the moving space inside the cassette, and the bonding process itself has extremely high requirements for the position accuracy of the wafer. Therefore, pre-positioning of the wafer needs to be carried out first. The main purpose of pre-positioning is to confirm the direction of the wafer and ensure that the deviation in direction is minimized when it enters the subsequent processing station. This can greatly improve the accuracy and efficiency of the subsequent process. After pre-positioning, the wafer will go through steps such as surface treatment and cleaning in sequence. When the wafer enters the bonding chamber, more precise positioning will be carried out. The positioning operation range of the wafer when it enters the bonding chamber is relatively small because the general direction and position of the wafer have been ensured through pre-positioning at this time, and only fine adjustment is needed to reach the optimal bonding position. Therefore, through the pre-positioning module, the accuracy and reliability of wafer bonding can be ensured, the yield can be increased, and the production cost can be reduced.

[0022] Furthermore, the bonding equipment includes a first camera, a second camera, an adjustment manipulator, a bonding head, and a positioning chuck mechanism. The bonding head is connected to a driving device and moves up and down under the action of the driving device. The bonding head is used to apply a bonding force to the wafer. The positioning chuck mechanism is located below the bonding head and is used to position and clamp the wafer to be bonded. The first camera is used to take a picture of the reference point of the lower wafer on the positioning chuck mechanism and record the coordinate position of this reference point. The adjustment manipulator is located on one side of the positioning chuck mechanism. After adjusting the position of the upper wafer, the adjustment manipulator transports it to the positioning chuck mechanism. The second camera is located on the transport path of the adjustment manipulator and is used to take a picture of the reference point of the upper wafer on the adjustment manipulator and record the coordinate position of this reference point.

[0023] The above-mentioned further beneficial effects are as follows: By using the first camera and the second camera to work together, precise photographing and coordinate recording of the wafer before bonding are achieved, ensuring precise alignment of the wafer during the bonding process. The manipulator is adjusted so that the position of the upper wafer can be flexibly adjusted to meet the precise alignment requirements with the lower wafer. In addition, the positioning chuck mechanism of the present utility model is directly built into the bonding equipment, changing the cumbersome handling steps in the traditional wafer bonding process. The built-in positioning chuck mechanism not only reduces the errors and wafer damage that may occur during handling, but also simplifies the operation process and improves production efficiency.

[0024] Further, the positioning chuck mechanism includes a tray, a plurality of spacers, and a plurality of clamping devices. The spacers and the clamping devices are arranged along the circumference of the tray. The spacers can move radially along the tray. The clamping devices are used to press two or more wafers together, and the spacers are used to support the upper wafer before bonding so that the upper wafer and the lower wafer do not contact.

[0025] The above-mentioned further beneficial effects are as follows: By setting the spacers, the upper wafer can be effectively supported before bonding, ensuring that the upper wafer and the lower wafer do not contact before bonding, thus effectively avoiding damage or contamination that may be caused by direct contact. At the same time, the spacers can move flexibly along the radial direction of the tray. They can withdraw before the lower wafer is placed, or move above the lower wafer after the lower wafer is placed in place, and move radially outward along the radial direction to withdraw before bonding, ensuring the smooth progress of the bonding process. In addition, a plurality of clamping devices are arranged along the circumference of the tray, which can firmly clamp the wafer and effectively prevent it from moving or shifting during the bonding process. The positioning chuck mechanism can accurately position and clamp the wafer, significantly reducing bonding failures caused by inaccurate positioning or unstable clamping, thereby effectively improving production efficiency. Description of the Drawings

[0026] In order to more clearly illustrate the technical solutions in the embodiments of the present utility model or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only the embodiments of the present utility model. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained according to the provided drawings.

[0027] Figure 1 It is a schematic layout structure diagram of an existing bonding equipment;

[0028] Figure 2 It is a route map of the handling robot when the wafer bonding system of Embodiment 1 of the present utility model is used for wafer thermocompression bonding;

[0029] Figure 3 It is a flowchart of the wafer thermocompression bonding method of Embodiment 1 of the present utility model;

[0030] Figure 4 The roadmap of the handling robot for plasma-activated direct bonding in the wafer bonding system of Embodiment 1 of the present utility model;

[0031] Figure 5 The flowchart of the wafer direct bonding method of Embodiment 1 of the present utility model;

[0032] Figure 6 The roadmap of the handling robot for anodic bonding in the layout of the wafer bonding system of Embodiment 1 of the present utility model;

[0033] Figure 7 The flowchart of the wafer anodic bonding method of Embodiment 1 of the present utility model;

[0034] Figure 8 The structural schematic diagram of the bonding equipment of the present utility model;

[0035] Figure 9 The structural schematic diagram of the positioning chuck mechanism of the present utility model;

[0036] Figure 10 The structural schematic diagram of placing the lower wafer on the tray of the present utility model;

[0037] Figure 11 The structural schematic diagram of placing the upper wafer on the spacer of the present utility model;

[0038] Figure 12 The structural schematic diagram of the clamping device clamping the upper and lower wafers of the present utility model;

[0039] Figure 13 The layout diagram of the wafer bonding system of Embodiment 2 of the present utility model;

[0040] In the figure, 100, the first bonding module; 200, the second bonding module; 300, the transfer channel; 310, the handling robot; 400, the wafer loading and unloading area; 410, the upper wafer storage module; 420, the lower wafer storage module; 430, the bonded product storage module; 500, the pre-positioning module; 600, the cooling module; 700, the plasma activation module; 800, the cleaning module; 810, the first cleaning device; 820, the second cleaning device;

[0041] 900, the bonding equipment; 910, the first camera; 920, the second camera; 930, the adjustment manipulator; 940, the indenter;

[0042] 950, the positioning chuck mechanism; 951, the tray; 952, the spacer; 953, the clamping device;

[0043] 1000, the third bonding module. Detailed implementation mode

[0044] The principles and features of the present utility model will be described below in conjunction with examples. The examples cited are only used to explain the present utility model and are not intended to limit the scope of the present utility model.

[0045] As Figure 1 shown, it is a bonding equipment layout method known to the inventor. Through the collaborative operation of two robots and multiple functional modules, the process of wafer from cleaning, positioning to bonding and separation is completed. Specifically, it includes the following steps: First, the second robot grabs the chuck from the chuck storage area and places it on the positioning module, and the positioning module immediately calibrates the position of the chuck; after positioning, the positioning module carries the chuck and translates it to the next working area to prepare for the placement of the wafer; the first robot takes out the wafer to be processed from the wafer storage area and sends it to the cleaning module for surface cleaning; subsequently, the first robot takes out the wafer from the cleaning module and sends it to the pre-positioning module for pre-positioning to ensure that the wafer can be accurately installed on the chuck in a predetermined direction; the first robot places the pre-positioned wafer on the chuck and completes the installation of the wafer and the chuck on the positioning module. For the double-wafer structure, the relevant steps are repeated as required. Then, the product that has completed the installation and positioning of the wafer and the chuck is moved within the grasping range of the second robot and sent into the chamber for bonding. After bonding, the second robot grabs the bonded product and sends it to the cooling area for cooling; then the second robot transports the product to the chuck disassembly area to separate the chuck and the wafer; the separated wafer is moved into the grasping range of the first robot; the first robot grabs the finished product and places it in the wafer loading and unloading area for subsequent processing or packaging, and the second robot returns the chuck to the chuck storage area for the next use.

[0046] Embodiment 1:

[0047] As Figure 2 - Figure 7As shown in the figure, a wafer bonding system provided by the present utility model includes a first bonding module 100, a second bonding module 200, a transfer channel 300, a wafer loading and unloading area 400, a pre-positioning module 500, a cooling module 600, a plasma activation module 700, and a cleaning module 800. Bonding devices 900 are provided in both the first bonding module 100 and the second bonding module 200. The bonding devices 900 in the first bonding module 100 and the second bonding module 200 can be configured as bonding devices 900 with different functions, such as a direct bonding device, a thermocompression bonding device, or an anodic bonding device 900. In this embodiment, a thermocompression bonding device is provided in the first bonding module 100, which can perform wafer bonding and positioning, and has heating and pressing functions, and can set the bonding temperature and pressure; a direct bonding device is provided in the second bonding module 200, which can realize the function of electric bonding by applying a voltage to generate an electric field in anodic bonding, and can also realize the function of plasma activation bonding; a linear guide is provided in the transfer channel 300, and a handling robot 310 is provided on the linear guide. The handling robot 310 can reciprocate along the linear guide to realize wafer transfer; the wafer loading and unloading area 400 is used for wafer loading, unloading, and storage of bonded finished products; the pre-positioning module 500 is used to preliminarily correct the direction of the wafer, reduce the deviation caused by position changes during the handling process, and ensure that the wafer can be accurately docked in subsequent bonding processes; the cooling module 600 is used to control the temperature of the wafer during or after wafer bonding, so that the wafer becomes room temperature for subsequent production processes; the plasma activation module 700 is used to perform plasma activation treatment on the surface of the wafer; the wafer loading and unloading area 400, the pre-positioning module 500, the cooling module 600, the plasma activation module 700, and the cleaning module 800 are arranged side by side on one side of the transfer channel 300, and the first bonding module 100 and the second bonding module 200 are arranged side by side on the other side of the transfer channel 300.

[0048] The wafer loading and unloading area 400 includes an upper wafer storage module 410, a lower wafer storage module 420, and a bonded finished product storage module 430.

[0049] The pre-positioning module 500 includes a positioning device and a detection device. The positioning device is used to perform preliminary positioning on the wafer, and the detection device is used to detect the direction and position deviation of the wafer, and adjust the positioning device according to the detection result to correct the direction and position of the wafer.

[0050] A first cleaning device 810 and a second cleaning device 820 are provided in the cleaning module 800.

[0051] As Figure 8As shown in the figure, the bonding device 900 includes a first camera 910, a second camera 920, an adjustment manipulator 930, a bonding head 940, and a positioning chuck mechanism 950. The bonding head 940 is connected to a driving device and moves up and down under the action of the driving device. The bonding head 940 is used to apply a bonding force to the wafer. The positioning chuck mechanism 950 is located below the bonding head 940 and is used to position and clamp the wafer to be bonded. The first camera 910 is used to take a picture of the reference point of the lower wafer on the positioning chuck mechanism 950 and record the coordinate position of the reference point. The adjustment manipulator 930 is located on one side of the positioning chuck mechanism 950. After adjusting the position of the upper wafer, the adjustment manipulator 930 transports it to the positioning chuck mechanism 950. The second camera 920 is located on the transport path of the adjustment manipulator 930 and is used to take a picture of the reference point of the upper wafer on the adjustment manipulator 930 and record the coordinate position of the reference point. The bonding device 900 of the present utility model utilizes the first camera 910 and the second camera 920 to work together, realizing precise photographing and coordinate recording of the wafer before bonding, ensuring precise alignment of the wafer during the bonding process. The adjustment manipulator 930 enables the position of the upper wafer to be flexibly adjusted to meet the precise alignment requirements with the lower wafer. In addition, the present utility model directly incorporates the positioning chuck mechanism 950 into the bonding device 900, changing the cumbersome handling steps in the traditional wafer bonding process. The built-in positioning chuck mechanism 950 not only reduces the possible errors and wafer damage during the handling process, but also simplifies the operation process and improves the production efficiency.

[0052] As Figure 9 shown in the figure, the positioning chuck mechanism 950 includes a tray 951, a plurality of spacers 952, and a plurality of clamping devices 953. The spacers 952 and the clamping devices 953 are arranged circumferentially along the tray 951. The spacers 952 can move radially along the tray 951. The clamping devices 953 are used to press two or more wafers together, and the spacers 952 are used to support the upper wafer before bonding so that the upper wafer and the lower wafer do not contact.

[0053] As Figure 2 , Figure 3 and Figures 10 - 12 shown in the figure, a wafer thermocompression bonding method using the wafer bonding system includes the following steps:

[0054] H1. Pre-positioning of the lower wafer: The handling robot 310 in the transfer channel 300 picks up the lower wafer from the wafer loading and unloading area 400 and places it in the pre-positioning module 500 for wafer orientation calibration;

[0055] H2. Place the lower wafer into the first bonding module 100: The calibrated lower wafer is placed into the first bonding module 100 by the handling robot 310, and the lower wafer is positioned within the first bonding module 100.

[0056] More specifically, the lower wafer is loaded onto the tray 951 of the positioning chuck mechanism 950 by the handling robot 310. The control system controls the moving device to drive the first camera 910 to move to a specified position. The first camera 910 takes a photo of the first reference point on the lower wafer and records the coordinate position of this first reference point. The moving device drives the first camera 910 to return to the initial position.

[0057] H3. Pre-position the upper wafer: The handling robot 310 in the transfer channel 300 picks up the upper wafer from the wafer loading and unloading area 400 again and places it in the pre-positioning module 500 for wafer orientation calibration.

[0058] H4. Place the upper wafer into the first bonding module 100: The calibrated upper wafer is placed into the first bonding module 100 by the handling robot 310 in the transfer channel 300.

[0059] Before the upper wafer is placed on the bonding device 900 in the first bonding module 100, the spacer 952 on the bonding device 900 in the first bonding module 100 first extends. The handling robot 310 places the upper wafer above the spacer 952.

[0060] H5. Position the upper wafer and bond: Position the upper wafer within the first bonding module 100 and perform thermocompression bonding between the upper wafer and the lower wafer. During the thermocompression bonding process, the bonding chamber is evacuated.

[0061] H51. Positioning: The adjustment manipulator 930 on the bonding device 900 adsorbs the upper wafer on the spacer 952 through a suction cup and moves the upper wafer to the second camera 920. The second camera 920 takes a photo of the second reference point on the upper wafer and records the coordinate position of this second reference point. The control system calculates the relative position between the first reference point and the second reference point based on the coordinate position of the first reference point and the coordinate position of the second reference point, and controls the adjustment manipulator 930 to adjust the orientation of the upper wafer according to this relative position, aligning the second reference point of the upper wafer with the first reference point of the lower wafer. The clamping device 953 in the bonding device 900 presses the aligned lower wafer and upper wafer tightly.

[0062] H52. Thermocompression bonding: The ram 940 presses the lower wafer and the upper wafer under the drive of the driving device.

[0063] H6. Cooling of the bonded product: The handling robot 310 in the transfer channel 300 takes out the bonded product from the first bonding module 100 and places it in the cooling module 600 for cooling;

[0064] H7. Transfer of the finished product to the wafer loading / unloading area 400: The cooled finished product is taken away by the handling robot 310 in the transfer channel 300 from the cooling module 600 and stored in the wafer loading / unloading area 400.

[0065] As Figure 4 , Figure 5 and Figures 10 - 12 shown, a direct wafer bonding method includes the wafer bonding system, and the bonding method includes the following steps:

[0066] D1. Pre-positioning of the lower wafer: The handling robot 310 in the transfer channel 300 picks up the lower wafer from the wafer loading / unloading area 400 and places it in the pre-positioning module 500 for wafer orientation calibration;

[0067] D2. Surface activation treatment of the lower wafer: The lower wafer is placed by the handling robot 310 into the plasma activation module 700 for surface activation treatment of the wafer;

[0068] D3. Cleaning of the lower wafer: The handling robot 310 places the lower wafer that has undergone surface activation treatment into the cleaning module 800 for wafer cleaning; The handling robot 310 places the lower wafer that has undergone surface activation treatment into the first cleaning device 810 in the cleaning module 800 for wafer cleaning.

[0069] D4. Placement of the lower wafer into the second bonding module: The handling robot 310 places the cleaned lower wafer into the second bonding module 200 for precise positioning of the lower wafer within the second bonding module 200;

[0070] More specifically, the lower wafer is placed on the tray 951 of the positioning chuck mechanism 950 by the handling robot 310, the control system controls the moving device to drive the first camera 910 to move to a specified position, the first camera 910 takes a photo of the first reference point on the lower wafer and records the coordinate position of the first reference point, and the moving device drives the first camera 910 to return to the initial position;

[0071] D5. Pre-positioning of the upper wafer: The handling robot 310 picks up the upper wafer from the wafer loading / unloading area 400 and places it in the pre-positioning module 500 for wafer orientation calibration;

[0072] D6. Surface activation treatment of the upper wafer: The upper wafer is placed by the handling robot 310 into the plasma activation module 700 for surface activation treatment of the wafer;

[0073] D7. Upper Wafer Cleaning: The handling robot 310 places the surface-activated upper wafer into the cleaning module 800 for wafer cleaning; the handling robot 310 places the surface-activated upper wafer into the second cleaning device 820 in the cleaning module 800 for wafer cleaning;

[0074] D8. Placing the Upper Wafer into the Second Bonding Module: The handling robot 310 places the cleaned upper wafer into the second bonding module 200;

[0075] Before the upper wafer is placed on the bonding device 900 in the second bonding module 200, the spacer 952 on the bonding device 900 in the second bonding module 200 first extends out, and the handling robot 310 places the upper wafer above the spacer 952;

[0076] D9. Positioning and Bonding of the Upper Wafer in the Second Bonding Module 200: Position the upper wafer in the second bonding module 200 and perform direct bonding with the lower wafer, and evacuate the bonding chamber;

[0077] D91. Positioning: The adjustment manipulator 930 on the bonding device 900 in the second bonding module 200 adsorbs the upper wafer on the spacer 952 through a suction cup and moves the upper wafer to the second camera 920. The second camera 920 takes a picture of the second reference point on the upper wafer and records the coordinate position of the second reference point. The control system calculates the relative position between the first reference point and the second reference point based on the coordinate positions of the first reference point and the second reference point, and controls the adjustment manipulator 930 to adjust the orientation of the upper wafer according to this relative position, aligning the second reference point of the upper wafer with the first reference point of the lower wafer; the clamping device 953 in the bonding device 900 presses the aligned lower wafer and upper wafer tightly;

[0078] D92. Thermocompression Bonding: The ram 940 presses the lower wafer and the upper wafer under the drive of the driving device.

[0079] D10. Removing the Bonded Product: The handling robot 310 removes the bonded product from the second bonding module 200 and places it in the wafer loading and unloading area 400.

[0080] As Figure 6 、 Figure 7 and Figures 10 - 12 shown, a wafer anodic bonding method, the wafer bonding system, the bonding method includes the following steps:

[0081] S1. Pre-positioning of the Lower Wafer: The handling robot 310 picks up the lower wafer from the wafer loading and unloading area 400 and places it in the pre-positioning module 500 for wafer direction calibration.

[0082] S2. Lower wafer surface treatment: The lower wafer is sent into the plasma activation module 700 by the handling robot 310 for surface activation treatment;

[0083] S3. Lower wafer cleaning: The handling robot 310 sends the surface-treated lower wafer into the cleaning module 800 for cleaning; the handling robot 310 places the surface-activated lower wafer into the first cleaning device 810 in the cleaning module 800 for wafer cleaning;

[0084] S4. Lower wafer enters the anodic bonding module: The lower wafer is placed into the second bonding module 200 by the handling robot 310, and the lower wafer is positioned within the second bonding module 200;

[0085] More specifically, the lower wafer is placed on the tray 951 of the positioning chuck mechanism 950 by the handling robot 310. The control system controls the moving device to drive the first camera 910 to move to a specified position. The first camera 910 takes a picture of the first reference point on the lower wafer and records the coordinate position of the first reference point. The moving device drives the first camera 910 to return to the initial position;

[0086] S5. Upper wafer pre-positioning: The handling robot 310 picks up the upper wafer from the wafer loading / unloading area 400 and places it in the pre-positioning module 500 for wafer direction calibration;

[0087] S6. Upper wafer surface treatment: The upper wafer is sent into the plasma activation module 700 by the handling robot 310 for surface activation treatment;

[0088] S7. Upper wafer cleaning: The handling robot 310 sends the surface-treated upper wafer into the cleaning module 800 for cleaning; the handling robot 310 places the surface-activated upper wafer into the second cleaning device 820 in the cleaning module 800 for wafer cleaning;

[0089] S8. Upper wafer enters the anodic bonding module: The upper wafer is placed into the second bonding module 200 by the handling robot 310;

[0090] Before the upper wafer is placed on the bonding device 900 in the second bonding module 200, the spacer 952 on the bonding device 900 in the second bonding module 200 first extends out, and the handling robot 310 places the upper wafer above the spacer 952;

[0091] S9. Upper wafer positioning and electric field application: Within the second bonding module 200, the upper wafer is positioned, and an electric field is generated by applying a voltage. At the same time, the bonding chamber is evacuated to prepare for the first step of anodic bonding;

[0092] S91. Alignment: The adjustment manipulator 930 on the bonding device 900 within the second bonding module 200 adsorbs the upper wafer on the spacer 952 through a suction cup, and moves the upper wafer to the second camera 920. The second camera 920 takes a picture of the second fiducial point on the upper wafer and records the coordinate position of this second fiducial point. The control system calculates the relative position between the first fiducial point and the second fiducial point based on the coordinate positions of the first fiducial point and the second fiducial point, and controls the adjustment manipulator 930 to adjust the orientation of the upper wafer according to this relative position, aligning the second fiducial point of the upper wafer with the first fiducial point of the lower wafer. The clamping device 953 in the bonding device 900 presses the aligned lower wafer and upper wafer tightly.

[0093] S92. An electric field is generated by applying a voltage. Meanwhile, the indenter 940 presses the lower wafer and the upper wafer under the drive of the driving device, thereby achieving electrostatic bonding.

[0094] S10. The second step of transporting to the first bonding module 100 for anodic bonding: The handling robot 310 transports the semi-finished wafer that has undergone the action of the electric field to the first bonding module 100 for thermocompression bonding treatment.

[0095] S11. Cooling the bonded product: The handling robot 310 transports the bonded product to the cooling module 600 for cooling.

[0096] S12. Taking out the bonded product: The handling robot 310 takes out the bonded product from the cooling module 600 and places it in the wafer loading / unloading area 400.

[0097] The wafer bonding system proposed by the present utility model not only supports various processes such as wafer thermocompression bonding, plasma-activated direct bonding, and anodic bonding, but also its compact layout design greatly saves space resources and is convenient for flexible adjustment according to production requirements. By using a single handling robot 310 to reciprocate in the transfer channel 300 along a linear guide rail, efficient handling of wafers is achieved, reducing equipment costs and energy consumption and labor input during operation; at the same time, the wafer loading and unloading area 400 can centrally manage the upper wafers, lower wafers, and bonded wafers, not only simplifying the operation process but also greatly reducing management costs. At the same time, the bonding device 900 of the present utility model also uses the first camera 910 and the second camera 920 to work together to achieve precise photographing and coordinate recording of the wafer before bonding, ensuring precise alignment of the wafer during the bonding process. The manipulator 930 is adjusted so that the position of the upper wafer can be flexibly adjusted to meet the precise alignment requirements with the lower wafer. In addition, the present utility model directly places the positioning chuck mechanism 950 inside the bonding device 900, changing the cumbersome handling steps in the traditional wafer bonding process. The built-in positioning chuck mechanism 950 not only reduces the errors and wafer damage that may occur during the handling process but also simplifies the operation process and improves production efficiency.

[0098] Embodiment 2:

[0099] As Figure 13 shown, different from Embodiment 1, the wafer bonding system includes three bonding modules, namely a first bonding module 100, a second bonding module 200, and a third bonding module 1000. The first bonding module 100, the second bonding module 200, the third bonding module 1000, the pre-positioning module 500, the cooling module 600, the plasma activation module 700, and the cleaning module 800 are distributed around the transfer channel 300. The first bonding module 100 and the second bonding module 200 are relatively arranged on both sides of the transfer channel 300. The wafer loading and unloading area 400 includes an upper wafer storage module 410, a lower wafer storage module 420, and a bonded product storage module 430. The upper wafer storage module 410, the lower wafer storage module 420, and the bonded product storage module 430 are arranged side by side between the first bonding module 100 and the second bonding module 200, and they are all located at one end of the transfer channel 300.

[0100] The first bonding module 100 is provided with a thermocompression bonding device, which can perform wafer bonding and positioning, and has heating and pressing functions, and can set the bonding temperature and pressure; the second bonding module 200 is a direct bonding device, which can realize the function of plasma activation bonding; the third bonding module 1000 is an anodic bonding device, which can realize the first step of anodic bonding, that is, the function of electric bonding by applying voltage to generate an electric field. When anodic bonding is carried out by using the wafer bonding system, thermocompression bonding and / or plasma activation bonding can be carried out synchronously to improve the bonding efficiency.

[0101] The above are only the preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A wafer bonding system, characterized in that: The invention comprises a plurality of bonding modules, a transfer channel (300), a wafer loading and unloading area (400), a pre-positioning module (500), a cooling module (600), a plasma activation module (700) and a cleaning module (800), wherein the plurality of bonding modules, the wafer loading and unloading area (400), the pre-positioning module (500), the cooling module (600), the plasma activation module (700) and the cleaning module (800) are distributed around the transfer channel (300); The bonding modules are each provided with a bonding device (900); A linear guide rail is provided in the transfer channel (300), a transport robot (310) is provided on the linear guide rail, and the transport robot (310) can reciprocate along the linear guide rail to transfer the wafer; The wafer loading and unloading area (400) is used for loading and unloading wafers and storing finished bonding products; The pre-positioning module (500) is used to preliminarily correct the direction of the wafer; The cooling module (600) is used to control the temperature of the wafer during or after wafer bonding; The plasma activation module (700) is used to perform plasma activation treatment on the surface of the wafer; The cleaning module (800) is used to clean the surface of the wafer.

2. The wafer bonding system according to claim 1, characterized in that: The bonding modules include two, namely a first bonding module (100) and a second bonding module (200); the wafer loading and unloading area (400), the pre-positioning module (500), the cooling module (600), the plasma activation module (700) and the cleaning module (800) are arranged side by side on one side of the transfer channel (300); and the first bonding module (100) and the second bonding module (200) are arranged side by side on the other side of the transfer channel (300).

3. The wafer bonding system according to claim 1, characterized in that: The bonding modules include three, namely a first bonding module (100), a second bonding module (200) and a third bonding module (1000); the first bonding module (100), the second bonding module (200), the third bonding module (1000), a wafer loading and unloading area (400), a pre-positioning module (500), a cooling module (600), a plasma activation module (700) and a cleaning module (800) are distributed around the transfer channel (300).

4. The wafer bonding system according to any one of claims 1 to 3, characterized in that: The wafer loading and unloading area (400) comprises an upper wafer storage module (410), a lower wafer storage module (420) and a bonding finished product storage module (430).

5. The wafer bonding system according to claim 4, characterized in that: The pre-positioning module (500) comprises a positioning device and a detection device, wherein the positioning device is used to preliminarily position the wafer, and the detection device is used to detect the direction and position deviation of the wafer, and adjust the positioning device according to the detection result to correct the direction and position of the wafer.

6. The wafer bonding system according to claim 1, characterized in that: The bonding device (900) comprises a first camera (910), a second camera (920), an adjustment robot (930), a pressure head (940) and a positioning chuck mechanism (950), wherein the pressure head (940) is connected to a driving device and rises and falls under the action of the driving device, the pressure head (940) is used to apply a bonding force to a wafer, the positioning chuck mechanism (950) is located below the pressure head (940), the positioning chuck mechanism (950) is used to position and clamp a wafer to be bonded, and the first camera (910) is used to adjust the positioning chuck mechanism (950) to adjust the bonding force of the wafer. The reference point of the lower wafer on the disk mechanism (950) is photographed and the coordinate position of the reference point is recorded. The adjustment robot (930) is located on one side of the positioning chuck mechanism (950). The adjustment robot (930) adjusts the position of the upper wafer and transports it to the positioning chuck mechanism (950). The second camera (920) is located on the transport path of the adjustment robot (930). The second camera (920) is used to take a photo of the reference point of the upper wafer on the adjustment robot (930) and record the coordinate position of the reference point.

7. The wafer bonding system according to claim 6, characterized in that: The positioning chuck mechanism (950) comprises a tray (951), a plurality of spacers (952) and a plurality of clamping devices (953); the spacers (952) and the clamping devices (953) are arranged along the circumference of the tray (951); the spacers (952) can move radially along the tray (951); the clamping devices (953) are used to press two or more wafers; the spacers (952) are used to support the upper wafer before bonding so that the upper wafer does not contact the lower wafer.

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