High-heat-resistance monocrystalline silicon wafer provided with protective assembly

Abstract

The utility model discloses a high-heat-resistance monocrystalline silicon wafer provided with a protection assembly, which relates to the technical field of monocrystalline silicon wafers and comprises a protection plate and a monocrystalline silicon wafer, the top of the protection plate is provided with a placement groove matched with the monocrystalline silicon wafer, four groups of cavities are arranged in the protection plate, and limiting assemblies are arranged in the four groups of cavities. The limiting assembly comprises a sliding plate slidably connected in the cavity, a limiting plate is arranged on the left side wall of the sliding plate, one end of the limiting plate penetrates through the left side wall in the cavity and extends to the outside, a spring is arranged on the right side wall of the sliding plate, and one end of the spring is connected with the right side wall in the cavity. Under the action of the protection plate, the limiting assembly and the placement groove, the monocrystalline silicon wafer can be protected, the monocrystalline silicon wafer is prevented from being damaged, meanwhile, the use strength of the monocrystalline silicon wafer can be improved under the cooperation of the reinforcing layer, and it is guaranteed that the monocrystalline silicon wafer is not damaged; the heat resistance of the monocrystalline silicon wafer can be improved under the action of the heat-resistant layer.

Description

Technical Field

[0001] The utility model relates to the technical field of single crystal wafers, and particularly relates to a single crystal wafer with a high heat resistance provided with a protection component. Background Technique

[0002] Single crystal wafer: a single crystal of silicon, which is a crystal with a basically complete lattice structure. It has different properties in different directions and is a good semiconductor material. The purity requirement reaches 99.9999%, or even above 99.9999999%, and is used to manufacture semiconductor devices, solar cells, etc. It is drawn from high-purity polysilicon in a single crystal furnace. The existing single crystal wafers are not provided with protection components and are prone to damage during use, thus affecting the service life of the single crystal wafers. Therefore, we propose a single crystal wafer with a high heat resistance provided with a protection component. Content of the Utility Model

[0003] The purpose of the utility model is to provide a single crystal wafer with a high heat resistance provided with a protection component to solve the problems raised in the above background technique.

[0004] To achieve the above purpose, the utility model provides the following technical solution: a single crystal wafer with a high heat resistance provided with a protection component, including a protection plate and a single crystal wafer. A placement groove matching the single crystal wafer is opened at the top of the protection plate. Four groups of cavities are opened inside the protection plate. A limiting component is arranged in each of the four groups of cavities. The limiting component includes a sliding plate slidably connected in the cavity. A limiting plate is arranged on the left side wall of the sliding plate. One end of the limiting plate penetrates through the left side wall inside the cavity and extends to the outside. A spring is arranged on the right side wall of the sliding plate. One end of the spring is connected to the right side wall inside the cavity. A pulling block is arranged on the top of the sliding plate.

[0005] Further, the single crystal wafer includes a silicon wafer substrate. A strengthening layer is arranged on the upper surface of the silicon wafer substrate. A heat-resistant layer is arranged on the upper surface of the strengthening layer. An anti-ultraviolet layer is arranged on the upper surface of the heat-resistant layer. An anti-scratch layer is arranged on the upper surface of the anti-ultraviolet layer.

[0006] Further, the anti-scratch layer is a polytetrafluoroethylene layer.

[0007] Further, the anti-ultraviolet layer is an anti-ultraviolet polycarbonate film.

[0008] Further, the four groups of cavities are arranged in a rectangular array inside the protection plate.

[0009] Further, a guiding groove is opened at the bottom inside the cavity. A guiding block matching the guiding groove is arranged at the bottom of the sliding plate.

[0010] Further, a sliding groove is opened at the top of the protection plate. The pulling block is slidably connected in the sliding groove.

[0011] Compared with the prior art, the beneficial effects of the present utility model are as follows: Under the action of the protection plate, the limiting component and the placement groove, the single crystal silicon wafer can be protected to avoid damage to the single crystal silicon wafer. At the same time, with the cooperation of the strengthening layer, the service strength of the single crystal silicon wafer can be improved to ensure that the single crystal silicon wafer is not damaged; Under the action of the heat-resistant layer, the heat resistance of the single crystal silicon wafer can be improved, and under the action of the ultraviolet-proof layer, ultraviolet rays can be blocked, thereby inhibiting the aging of the silicon wafer substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 is a schematic structural diagram of the present utility model;

[0013] Figure 2 is a schematic structural diagram of the interior of the cavity of the present utility model;

[0014] Figure 3 is a schematic structural diagram of the single crystal silicon wafer of the present utility model.

[0015] In the figure: 1. Protection plate; 2. Limiting component; 20. Limiting plate; 21. Chute; 22. Pulling block; 23. Sliding plate; 24. Spring; 3. Placement groove; 4. Single crystal silicon wafer; 40. Silicon wafer substrate; 41. Strengthening layer; 42. Heat-resistant layer; 43. Ultraviolet-proof layer; 44. Scratch-proof layer; 5. Cavity. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0016] The technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are only a part of the embodiments of the present utility model, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present utility model without creative efforts shall fall within the protection scope of the present utility model.

[0017] Embodiment 1:

[0018] Please refer to Figures 1-3, the present utility model provides a technical solution: a single-crystalline silicon wafer with a high heat resistance and provided with a protection component, which includes a protection plate 1 and a single-crystalline silicon wafer 4. A placement groove 3 matching the single-crystalline silicon wafer 4 is opened at the top of the protection plate 1. Four groups of cavities 5 are opened inside the protection plate 1, and the four groups of cavities 5 are distributed in a rectangular array inside the protection plate 1. A limiting component 2 is arranged in each of the four groups of cavities 5. The limiting component 2 includes a sliding plate 23 slidably connected inside the cavity 5. A guiding groove is opened at the bottom inside the cavity 5. A guiding block matching the guiding groove is arranged at the bottom of the sliding plate 23. Under the action of the guiding groove and the guiding block, the sliding plate 23 moves more stably inside the cavity 5. A limiting plate 20 is arranged on the left side wall of the sliding plate 23. One end of the limiting plate 20 penetrates through the left side wall inside the cavity 5 and extends to the outside. A spring 24 is arranged on the right side wall of the sliding plate 23. One end of the spring 24 is connected to the right side wall inside the cavity 5. A pulling block 22 is arranged on the top of the sliding plate 23. A sliding groove 21 is opened at the top of the protection plate 1. The pulling block 22 is slidably connected inside the sliding groove 21. Under the action of the sliding groove 21, the pulling block 22 moves more stably.

[0019] Please refer to Figure 3 , the single-crystalline silicon wafer 4 includes a silicon wafer substrate 40. A strengthening layer 41 is arranged on the upper surface of the silicon wafer substrate 40. A heat-resistant layer 42 is arranged on the upper surface of the strengthening layer 41. Under the action of the heat-resistant layer, the heat resistance of the single-crystalline silicon wafer 4 can be improved. An anti-ultraviolet layer 43 is arranged on the upper surface of the heat-resistant layer 42. The anti-ultraviolet layer 43 is an anti-ultraviolet polycarbonate film. Under the action of the anti-ultraviolet layer 43, ultraviolet rays can be blocked, thereby the aging of the single-crystalline silicon wafer 4 can be inhibited. An anti-scratch layer 44 is arranged on the upper surface of the anti-ultraviolet layer 43. The anti-scratch layer 44 is a polytetrafluoroethylene layer. Under the action of the anti-scratch layer 44, a good anti-scratch effect can be achieved.

[0020] Working principle: The staff pulls the pulling block 22 to drive the sliding plate 23 to move. The sliding plate 23 squeezes the spring 24. The sliding plate 23 drives the limiting plate 20 to move into the cavity 5. Then the single-crystalline silicon wafer 4 is placed in the placement groove 3. The staff releases the pulling block 22. Under the action of the spring 24, the sliding plate 23 is driven to move. The sliding plate 23 drives the limiting plate 20 to move out of the cavity 5. The limiting plate 20 can limit the single-crystalline silicon wafer 4 and fix the single-crystalline silicon wafer 4 in the placement groove 3, thereby protecting the periphery of the single-crystalline silicon wafer 4. Under the action of the strengthening layer 41, the service strength of the single-crystalline silicon wafer 4 can be improved to ensure that the single-crystalline silicon wafer 4 is not damaged.

[0021] Although the embodiments of the present utility model have been shown and described, for those of ordinary skill in the art, it can be understood that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principle and spirit of the present utility model. The scope of the present utility model is defined by the appended claims and their equivalents.

Claims

1. A single-crystalline silicon wafer with a high heat resistance provided with a protection component, comprising a protection plate (1) and a single-crystalline silicon wafer (4), characterized in that: A placement groove (3) matching the single-crystalline silicon wafer (4) is formed at the top of the protection plate (1). Four cavities (5) are formed inside the protection plate (1). A limiting component (2) is arranged in each of the four cavities (5). The limiting component (2) includes a sliding plate (23) slidably connected in the cavity (5). A limiting plate (20) is arranged on the left side wall of the sliding plate (23). One end of the limiting plate (20) penetrates through the left side wall inside the cavity (5) and extends to the outside. A spring (24) is arranged on the right side wall of the sliding plate (23). One end of the spring (24) is connected to the right side wall inside the cavity (5). A pulling block (22) is arranged on the top of the sliding plate (23).

2. The monocrystalline silicon wafer with a high heat resistance provided with a protection component according to claim 1, characterized in that: The single-crystalline silicon wafer (4) includes a silicon wafer substrate (40). A strengthening layer (41) is arranged on the upper surface of the silicon wafer substrate (40). A heat-resistant layer (42) is arranged on the upper surface of the strengthening layer (41). An anti-ultraviolet layer (43) is arranged on the upper surface of the heat-resistant layer (42). An anti-scratch layer (44) is arranged on the upper surface of the anti-ultraviolet layer (43).

3. The monocrystalline silicon wafer with a high heat resistance provided with a protection component according to claim 2, characterized in that: The anti-scratch layer (44) is a polytetrafluoroethylene layer.

4. The monocrystalline silicon wafer with a high heat resistance provided with a protection component according to claim 2, wherein: The anti-ultraviolet layer (43) is an anti-ultraviolet polycarbonate film.

5. The monocrystalline silicon wafer with a high heat resistance provided with a protection component according to claim 1, wherein: The four cavities (5) are distributed in a rectangular array inside the protection plate (1).

6. The monocrystalline silicon wafer with a high heat resistance provided with a protection component according to claim 1, wherein: A guiding groove is formed at the bottom inside the cavity (5). A guiding block matching the guiding groove is arranged at the bottom of the sliding plate (23).

7. The monocrystalline silicon wafer with a high heat resistance provided with a protection component according to claim 1, wherein: A sliding groove (21) is formed at the top of the protection plate (1). The pulling block (22) is slidably connected in the sliding groove (21).

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