Voltage driving device and new energy vehicle

Abstract

The utility model discloses a voltage driving device and a new energy vehicle, and relates to the semiconductor control field, the voltage driving device comprises a driving control module, a grid voltage adjusting module and a power device, the driving control module is connected with the grid voltage adjusting module, and the grid voltage adjusting module is connected with the grid of the power device; the driving control module is used for detecting a first PWM signal of a same-phase transistor of a bridge arm section where the power device is located, and is also used for detecting a second PWM signal of the bridge arm section where the power device is located; the grid voltage adjusting module is used for adjusting the grid voltage of the power device in the turn-on stage when the driving control module detects that the first PWM signal is turned off; and the grid voltage adjusting module is also used for adjusting the grid voltage of the power device in the turn-off stage when the driving control module detects that the second PWM signal is turned off based on the preset phase shift PWM signal. According to the utility model, the technical problem of poor grid voltage regulation effectiveness is solved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor control, in particular to a voltage driving device and a new energy vehicle. Background Art

[0002] In the traditional gate drive (CGD, Conventional Gate Driver) mode, due to the extremely high switching speed of SiC (Silicon Carbide) and GaN (Gallium Nitride) power devices, the rapid change of gate voltage and drain current is caused. This rapid transient change exacerbates the overshoot phenomenon of voltage and current, and further threatens the stability and reliability of the products where the power devices are located.

[0003] Although currently, through AGD (Active Gate Driver), the voltage of the power device during the switching process can be adjusted to reduce problems such as voltage overshoot, but since the response speed of the control signal for adjusting the voltage cannot keep up with the switching speed of the power device, the control signal cannot effectively adjust the voltage of the power device during the turn-on stage and the turn-off stage. For example, it may be that when the power device is about to turn off or turn on, the gate voltage of the power device starts to be adjusted. Thus, there is a technical problem of poor effectiveness in regulating the gate voltage.

[0004] The above content is only used to assist in understanding the technical solution of the utility model, and does not represent an admission that the above content is prior art. Summary of the Utility Model

[0005] The main purpose of the utility model is to provide a voltage driving device and a new energy vehicle, aiming to solve the technical problem of poor effectiveness in regulating the gate voltage.

[0006] To achieve the above purpose, the utility model provides a voltage driving device. The voltage driving device includes a drive control module, a gate voltage regulation module, and a power device. The drive control module is connected to the gate voltage regulation module, and the gate voltage regulation module is connected to the gate of the power device;

[0007] The drive control module is used to detect the first PWM signal of the same-phase transistor in the bridge arm segment where the power device is located, and is also used to detect the second PWM signal in the bridge arm segment where the power device is located;

[0008] The gate voltage regulation module is used to adjust the gate voltage of the power device during the turn-on stage when the drive control module detects that the first PWM signal is turned off;

[0009] The gate voltage regulation module is further configured to regulate the gate voltage of the power device during the turn-off phase when the drive control module detects that the second PWM signal is turned off based on a preset phase-shifted PWM signal, and the preset phase-shifted PWM signal is used to compensate for the signal transmission delay time existing between the drive control module and the power device.

[0010] In one embodiment, the gate voltage regulation module includes a drive power supply, a first isolation drive module, and a voltage regulation circuit;

[0011] The drive power supply is connected to the voltage regulation circuit, the drive power supply is connected to the drive control module, the first isolation drive module is connected to the drive control module, the first isolation drive module is connected to the voltage regulation circuit, and the voltage regulation circuit is connected to the gate of the power device;

[0012] The voltage regulation circuit is configured to regulate the gate voltage of the power device.

[0013] In one embodiment, the voltage regulation circuit includes a first inductor, a second inductor, a first diode, a second diode, a first resistor, a second resistor, a third resistor, a fourth resistor, a first capacitor, a second capacitor, a first switching tube, a second switching tube, and a third switching tube;

[0014] The first end of the first inductor is connected to the anode of the first diode, the cathode of the first diode is connected to the first end of the first resistor, the second end of the first resistor is connected to the drain of the third switching tube, the source of the third switching tube is connected to the anode of the second diode, the cathode of the second diode is connected to the first end of the second inductor, the gate of the third switching tube is connected to a voltage regulation interface, and the second end of the first inductor and the second end of the second inductor are connected to the drive power supply;

[0015] The first end of the first capacitor is connected to the source of the first switching tube, the gate of the first switching tube is connected to the first end of the second resistor, the drain of the first switching tube is connected to the first end of the fourth resistor, the first end of the fourth resistor is connected to the drain of the second switching tube, the gate of the second switching tube is connected to the first end of the third resistor, the second end of the third resistor and the second end of the second resistor are connected to a control interface, the source of the second switching tube is connected to the first end of the second capacitor, the second end of the second capacitor is grounded, the second end of the first capacitor is grounded, the first end of the first resistor is connected to the first end of the first capacitor, and the second end of the fourth resistor is connected to the power device.

[0016] In one embodiment, the drive control module includes a drive signal generation module, an adjustment control module, and a collection module, the drive signal generation module is connected to the adjustment control module, and the adjustment control module is connected to the collection module;

[0017] The driving signal generation module is used to generate a PWM control signal and also to collect the three-phase current amplitudes of the driving device. The PWM control signal includes the first PWM signal and the second PWM signal;

[0018] The acquisition module is used to collect the bus voltage and three-phase temperature amplitudes of the driving device;

[0019] The adjustment and control module is used to detect the PWM control signal in the driving signal generation module.

[0020] In one embodiment, the adjustment and control module is further used to detect the bus voltage and three-phase temperature amplitudes collected by the acquisition module, and the adjustment and control module is further used to detect the three-phase current amplitudes collected by the driving signal generation module.

[0021] In one embodiment, the adjustment and control module is an FPGA.

[0022] In one embodiment, the acquisition module includes a receiving module, an analog-to-digital conversion module, and a second isolation driving module;

[0023] The receiving module is connected to the analog-to-digital conversion module, the analog-to-digital conversion module is connected to the second isolation driving module, and the second isolation driving module is used to connect to the adjustment and control module.

[0024] In one embodiment, the adjustment and control module in the drive control module is connected to the first isolation driving module in the gate voltage adjustment module, and the adjustment and control module is connected to the drive power supply in the gate voltage adjustment module.

[0025] In one embodiment, the power device is a SiC MOSEFT.

[0026] In addition, to achieve the above object, the present utility model further provides a new energy vehicle, and the new energy vehicle includes the voltage driving device described above.

[0027] One or more technical solutions proposed by the present utility model have at least the following technical effects:

[0028] In the present utility model, the gate voltage regulation module is used to turn on the regulation of the gate voltage of the power device during the turn-on stage when the drive control module detects that the first PWM signal is turned off. Since the first PWM signal is the PWM signal of the same-phase opposite transistor in the bridge arm segment where the power device is located, and a bridge arm can be divided into two bridge arm segments, namely the upper transistor and the lower transistor, and the upper transistor and the lower transistor work in a complementary manner. When the PWM signal of the upper transistor is turned on, the PWM signal of the lower transistor is turned off, and when the PWM signal of the lower transistor is turned on, the PWM signal of the upper transistor is turned off. Moreover, when the PWM signal is turned off, it indicates that the power device corresponding to the PWM signal is also turned off, and when the PWM signal is turned on, it indicates that the power device corresponding to the PWM signal is also turned on.

[0029] Therefore, when it is detected that the first PWM signal of the same-phase opposite transistor of the power device is turned off, it indicates that the power device is about to be turned on. So, the gate voltage of the power device during the turn-on stage can be regulated, rather than regulating the gate voltage of the power device during the turn-on stage only when it is detected that the second PWM signal of the bridge arm segment where the power device is located is turned on. Furthermore, the turn-on moment of the power device can be determined in advance, so as to timely turn on the regulation of the gate voltage of the power device during the turn-on stage, and thus timely regulate the gate voltage of the power device during the turn-on stage.

[0030] Furthermore, the gate voltage regulation module is also used to regulate the gate voltage of the power device during the turn-off stage when the drive control module detects that the second PWM signal is turned off based on the preset phase-shifted PWM signal. Since the preset phase-shifted PWM signal is used to compensate for the delay time of the signal transmission from the drive control module to the power device, based on the preset phase-shifted PWM signal, it can be detected in advance that the second PWM signal is turned off, so as to be able to turn on the regulation of the gate voltage of the power device during the turn-off stage in advance, reduce the influence of the delay time on the gate voltage regulation, and thus be able to timely turn on the regulation of the gate voltage of the power device during the turn-off stage.

[0031] Therefore, the present utility model can realize detecting in advance the moments when the power device enters the turn-on stage and the turn-off stage, and further can timely regulate the gate voltage during the turn-on stage and the turn-off stage, reduce the influence of signal transmission delay on the gate voltage regulation, so as to reduce the current overshoot and voltage overshoot and other situations during the turn-on and turn-off processes of the power device, and thus can improve the effectiveness of the gate voltage regulation. Description of the Drawings

[0032] The drawings here are incorporated into the specification and form a part of this specification, showing the embodiments in line with the present utility model, and are used together with the specification to explain the principle of the present utility model.

[0033] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, for those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0034] Figure 1 Structural schematic diagram of an embodiment in the voltage driving device of the present invention;

[0035] Figure 2 Specific structural schematic diagram of another embodiment in the voltage driving device of the present invention;

[0036] Figure 3 Partial circuit connection schematic diagram of the gate voltage regulation module in the voltage driving device of the present invention;

[0037] Figure 4 Specific structural schematic diagram of another embodiment in the voltage driving device of the present invention;

[0038] Figure 5 Module connection schematic diagram of each module in the voltage driving device of the present invention;

[0039] Figure 6 Schematic diagram of the gate voltage change of the power device in the turn-on stage and turn-off stage in the voltage driving device of the present invention;

[0040] Figure 7 Schematic diagram of the switching trajectory of the power device in the CGD driving mode related to the present invention.

[0041] The realization of the object, functional characteristics and advantages of the present invention will be further described with reference to the embodiments and the drawings.

[0042] Explanation of the reference numerals in the drawings:

[0043] 100, driving control module; 200, gate voltage regulation module; 300, power device; 110, regulation control module; 120, acquisition module; 130, driving signal generation module; 210, driving power supply; 220, first isolation driving module; 230, voltage regulation circuit; 121, second isolation driving module; 122 analog-to-digital conversion module; 123, receiving module; R1 to R9, first resistor to ninth resistor; C1 to C10, first capacitor to tenth capacitor; L1 to L4, first inductor to fourth inductor; Q1 to Q6, first switching transistor to sixth switching transistor; D1 to D4, first diode to fourth diode; T1, transformer. Specific embodiments

[0044] It should be understood that the specific embodiments described herein are merely used to explain the technical solutions of the present invention and are not intended to limit the present invention.

[0045] To better understand the technical solutions of the present invention, the following will be described in detail in conjunction with the accompanying drawings of the specification and specific implementation manners.

[0046] With the rapid development of power electronics technology, wide bandgap semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) are increasingly widely used in the field of power devices. Compared with traditional silicon (Si)-based power devices, SiC and GaN power devices, with their excellent electron drift velocity, have significantly improved power density, working efficiency, effectively reduced switching losses, and improved temperature characteristics, thus showing strong competitiveness and an increasing penetration trend in the power electronics market.

[0047] However, when using traditional gate drive (CGD) technology to drive these high-performance power devices, although their extremely fast switching speed brings a leap in performance, it also causes new problems. Specifically, the high dv / dt (voltage change rate) and high di / dt (current change rate) phenomena during the high-speed switching process lead to increased overshoot and oscillation of voltage and current, and then cause adverse effects such as electromagnetic interference (EMI), seriously affecting the stability and reliability of the system.

[0048] Currently, the industry generally adopts a derating strategy. For example, before enabling a power device, parameters such as the working voltage and current of the power device are reduced to avoid voltage and current overshoot. However, although this approach can ensure the stability and reliability of the power device to a certain extent, it also greatly limits the performance of SiC and GaN power devices and cannot fully utilize their high power density and high-efficiency characteristics. This undoubtedly limits the full play of the performance of SiC and GaN power devices and fails to maximize their advantages.

[0049] To solve the above problems, some researchers have proposed AGD technology to adjust the gate voltage in real time, effectively suppress the overshoot and oscillation of voltage and current, reduce EMI (Electromagnetic Interference), and improve the overall performance of the system where the power device is located.

[0050] However, when the AGD technology adjusts the gate voltage, a dedicated detection circuit is required to detect the turn-on and turn-off moments of the power device, resulting in too high a cost for gate voltage regulation. Moreover, since the gate voltage regulation of the power device is only initiated when the power device is actually detected to turn on or off, and the response speed of the control signal for voltage regulation cannot keep up with the switching speed of the power device, the control signal cannot effectively regulate the voltage of the power device during the turn-on and turn-off phases. For example, it may be that the gate voltage of the power device starts to be regulated when the power device is about to turn off or turn on. As a result, there is a technical problem of poor effectiveness in gate voltage regulation.

[0051] To solve the above problems, the present utility model sets a drive control module and a gate voltage regulation module in the voltage drive device to detect the first PWM signal of the same-phase opposite tube in the bridge arm segment where the power device is located through the drive control module, and also detects the second PWM signal based on a preset phase-shifted PWM signal, so that the turn-off moment and turn-on moment of the power device can be detected in advance, and thus the gate voltage regulation of the power device during the turn-on and turn-off phases can be timely initiated, facilitating the effective regulation of the gate voltage of the power device during the turn-on and turn-off processes.

[0052] In addition, the drive control module further includes a drive signal generation module, a regulation control module, and a collection module. Since the regulation control module can directly detect the first PWM signal and the second PWM signal generated in the drive signal generation module, there is no need to additionally set up a dedicated PWM detection circuit, and the turn-on or turn-off of the PWM signal can be directly detected through the regulation control module, reducing the cost of gate voltage regulation. The regulation control module can be an FPGA (Field Programmable Gate Array).

[0053] Moreover, since the drive signal generation module in the present utility model can collect the three-phase current amplitudes in the drive device, and the collection module can collect the bus voltage and the three-phase temperature amplitudes in the drive device, the voltage drive device can adjust the gate voltage of the power device during the turn-on and turn-off phases according to the collected three-phase current, bus voltage, and three-phase temperature amplitudes, ensuring that the current and voltage received by the power device are within the tolerable range of the power device, improving the stability and reliability of the power device; and can accurately adjust the gate voltage of the power device during the turn-on and turn-off phases, enabling the power device to achieve optimal performance and improving the utilization rate of the power device.

[0054] Based on this, the embodiment of the present utility model provides a voltage drive device, referring to Figure 1 , Figure 1This is a schematic structural diagram of the voltage driving device in this embodiment. The voltage driving device includes a driving control module 100, a gate voltage regulation module 200, and a power device 300. The driving control module 100 is connected to the gate voltage regulation module 200, and the gate voltage regulation module 200 is connected to the gate of the power device 300;

[0055] The driving control module 100 is configured to detect the first PWM signal of the same-phase transistor in the bridge arm segment where the power device 300 is located, and is also configured to detect the second PWM signal in the bridge arm segment where the power device 300 is located;

[0056] The gate voltage regulation module 200 is configured to adjust the gate voltage of the power device 300 during the turn-on stage when the driving control module 100 detects that the first PWM signal is turned off;

[0057] The gate voltage regulation module 200 is further configured to adjust the gate voltage regulation of the power device 300 during the turn-off stage when the driving control module 100 detects that the second PWM signal is turned off based on a preset phase-shifted PWM signal, and the preset phase-shifted PWM signal is used to compensate for the delay time of signal transmission from the driving control module 100 to the power device 300.

[0058] It should be noted that the driving control module 100 can generate PWM control signals, and the PWM control signals include the first PWM signal and the second PWM signal. Therefore, the driving control module 100 can also detect the on or off conditions of the first PWM signal and the second PWM signal. The first PWM signal refers to the PWM signal of the same-phase transistor in the bridge arm segment where the power device 300 is located, and the same-phase transistor refers to another transistor belonging to the same bridge arm as the power device 300. For example, when the power device 300 is the upper transistor of the bridge arm, the first PWM signal is the PWM signal of the lower transistor of this bridge arm; when the power device 300 is the lower transistor of the bridge arm, the first PWM signal is the PWM signal of the upper transistor of this bridge arm. The second PWM signal is the PWM signal used to control the operation of the power device 300. When the power device 300 is the upper transistor of the bridge arm, the second PWM signal is the PWM signal of the upper transistor of this bridge arm; when the power device 300 is the lower transistor of the bridge arm, the second PWM signal is the PWM signal of the lower transistor of this bridge arm. The second PWM signal and the second PWM signal are PWM signals of different transistors belonging to the same bridge arm.

[0059] The driving control module 100 can be connected to a driving chip (not shown in the figure). The driving control module 11 can send the PWM control signal to the driving chip, and the driving chip can be connected to the voltage regulation circuit in the gate voltage regulation module. The voltage regulation circuit can receive the PWM control signal to drive the power device 300 to operate.

[0060] The drive control module 100 can detect whether the first PWM signal is turned off, and can detect whether the second PWM signal is turned off. If the first PWM signal is turned off, it means that the first PWM signal changes from a high level to a low level, and if the second PWM signal is turned off, it also means that the first PWM signal changes from a high level to a low level.

[0061] When the driving control module 100 detects that the first PWM signal is turned off, the gate voltage regulating module 200 can be called to start the gate voltage regulation of the power device 300 in the opening stage, and the gate voltage regulation of the power device 300 in the opening stage can be started when the first PWM signal is detected to be turned off. For example, the voltage regulating circuit in the gate voltage regulation can adjust the gate voltage of the gate of the power device, wherein the voltage regulating circuit can be considered as an AGD circuit, and can actively adjust the gate voltage of the gate of the power device.

[0062] When the drive control module 100 detects that the second PWM signal is turned off, it will detect the preset phase-shifted PWM signal so as to detect the turning-off time of the second PWM signal in advance. The preset phase-shifted PWM signal can be determined based on the phase difference and the second PWM signal. The phase difference can be determined based on the delay time. The delay time can be obtained by testing the transmission time between the power device and the drive control module. The longer the delay time, the greater the phase difference. For example, the preset phase-shifted PWM signal is ahead of the second PWM signal in time. Based on the phase difference, the starting point of the second PWM signal can be adjusted forward by the distance of the phase difference to obtain the preset phase-shifted PWM signal, so that the phase-shifted PWM signal is ahead of the second PWM signal. The preset phase-shifted PWM signal can be preset in the adjustment control module in advance, and the preset phase-shifted PWM signal can be preset in the drive control module. The drive control module detects whether the second PWM signal is turned off, which actually means detecting whether the preset phase-shifted PWM signal is turned off. When it is detected that the preset phase-shifted PWM signal is turned off, it is determined that the second PWM signal is turned off.

[0063] Therefore, this embodiment can detect the time when the power device 300 is turned on or off in advance, so that the gate voltage regulation of the power device 300 in the on stage and the gate voltage regulation in the off stage can be started in advance, so that more gate voltage regulation time can be obtained in the on stage and the off stage, so that the gate voltage in the on stage and the off stage can be more effectively regulated, and the current overshoot and voltage overshoot etc. can be reduced, so that the power device 300 is more stable.

[0064] In this embodiment, the gate voltage regulation module 200 is used to turn on the gate voltage regulation of the power device during the turn-on stage when the drive control module detects that the first PWM signal is turned off. Since the first PWM signal is the PWM signal of the same-phase opposite transistor in the bridge arm segment where the power device is located, and a bridge arm can be divided into two bridge arm segments, namely the upper transistor and the lower transistor, and the upper transistor and the lower transistor work in a complementary manner. When the PWM signal of the upper transistor is turned on, the PWM signal of the lower transistor is turned off, and when the PWM signal of the lower transistor is turned on, the PWM signal of the upper transistor is turned off. Also, since when the PWM signal is turned off, it indicates that the power device corresponding to the PWM signal is also turned off, and when the PWM signal is turned on, it indicates that the power device corresponding to the PWM signal is also turned on.

[0065] Therefore, when it is detected that the first PWM signal of the same-phase opposite transistor of the power device is turned off, it indicates that the power device is about to be turned on. So, the gate voltage regulation of the power device during the turn-on stage can be turned on, rather than turning on the gate voltage regulation of the power device during the turn-on stage only when it is detected that the second PWM signal of the bridge arm segment where the power device is located is turned on. Thus, the turn-on moment of the power device can be determined in advance, so as to timely turn on the gate voltage regulation of the power device during the turn-on stage, and thereby timely regulate the gate voltage of the power device during the turn-on stage.

[0066] Further, the gate voltage regulation module 200 is also used to turn on the gate voltage regulation of the power device during the turn-off stage when the drive control module detects that the second PWM signal is turned off based on the preset phase-shifted PWM signal. Since the preset phase-shifted PWM signal is used to compensate for the signal transmission delay time from the drive control module to the power device, based on the preset phase-shifted PWM signal, it can be detected in advance that the second PWM signal is turned off, so that the gate voltage regulation of the power device during the turn-off stage can be turned on in advance, reducing the influence of the delay time on the gate voltage regulation, and thus the gate voltage regulation of the power device during the turn-off stage can be turned on in time.

[0067] So, this embodiment can realize turning on the gate voltage regulation during the turn-on stage and the turn-off stage in advance, reducing the influence of signal transmission delay on the gate voltage regulation, so as to timely regulate the gate voltage of the power device during the turn-on stage and the turn-off stage, in order to reduce the current overshoot and voltage overshoot and other situations during the turn-on and turn-off processes of the power device, and thereby improve the effectiveness of the gate voltage regulation.

[0068] Further, in another embodiment, please refer to Figure 2 , Figure 2 which is a schematic structural diagram of the voltage drive device in another embodiment. The gate voltage regulation module 200 includes a drive power supply 210, a first isolation drive module 220, and a voltage regulation circuit 230;

[0069] The driving power supply 210 is connected to the voltage regulating circuit 230, the driving power supply 210 is connected to the driving control module 100, the first isolation driving module 220 is connected to the driving control module 100, the first isolation driving module 220 is connected to the voltage regulating circuit 230, and the voltage regulating circuit 230 is connected to the gate of the power device 300;

[0070] The voltage regulating circuit 230 is used to regulate the gate voltage of the power device 300.

[0071] It should be noted that the voltage regulating circuit 230 can be used to regulate the gate voltage of the power device 300, and the voltage regulating circuit 230 is connected to the gate of the power device 300. The first isolation driving module 220 is used to isolate the voltage regulating circuit 230 and the regulating control module 110, so as to reduce the interference of problems such as electrical noise and voltage impact on signal transmission and protect the security and stability of signal transmission. The first isolation driving module 220 can be an isolation driving chip, and the model can be NSI68XX.

[0072] Further, referring to Figure 3 , Figure 3 is a partial circuit schematic diagram of the gate voltage regulating module 200. Figure 4 The part referred to by 210 in

[0073] In this embodiment, the power device 300 is a SIC MOSFET (Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor).

[0074] Referring to Figure 3 , the voltage regulating circuit includes a first inductor L1, a second inductor L2, a first diode D1, a second diode D2, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a first capacitor C1, a second capacitor C2, a first switching tube Q1, a second switching tube Q2, and a third switching tube Q3;

[0075] The first end of the first inductor L1 is connected to the anode of the first diode D1. The cathode of the first diode D1 is connected to the first end of the first resistor R1. The second end of the first resistor R1 is connected to the drain of the third switching transistor Q3. The source of the third switching transistor Q3 is connected to the anode of the second diode D2. The cathode of the second diode D2 is connected to the first end of the second inductor L2. The gate of the third switching transistor Q3 is connected to the voltage regulation interface AGD_1. The second ends of the first inductor L1 and the second inductor L2 are connected to the drive power supply.

[0076] The first end of the first capacitor C1 is connected to the source of the first switching transistor Q1. The gate of the first switching transistor Q1 is connected to the first end of the second resistor. The drain of the first switching transistor Q1 is connected to the first end of the fourth resistor R4. The first end of the fourth resistor R4 is connected to the drain of the second switching transistor Q2. The gate of the second switching transistor Q2 is connected to the first end of the third resistor R3. The second ends of the third resistor R3 and the second resistor R2 are connected to the control interface PWM_Vgs_1. The source of the second switching transistor Q2 is connected to the first end of the second capacitor C2. The second end of the second capacitor C2 is grounded. The second end of the first capacitor C1 is grounded. The first end of the first resistor R1 is connected to the first end of the first capacitor C1. The second end of the fourth resistor R4 is connected to the power device 300.

[0077] It should be noted that the voltage regulation circuit includes three switching transistors, namely the first switching transistor Q1, the second switching transistor Q2, and the third switching transistor Q3. When the voltage regulation circuit regulates the gate voltage of the power device, it can control the on and off of each switching transistor to adjust the gate voltage of the power device during the turn-on process and the turn-off process. The control interface can be connected to the adjustment control module to receive the PWM signal sent by the adjustment control module to drive the operation of the power device. The voltage regulation interface can be connected to the first isolation drive module. The first isolation drive module is connected to the adjustment control module. The adjustment control module can send an AGD control signal to the first isolation drive module. The first isolation drive module can send the AGD control signal to the large voltage regulation interface. The AGD control signal can be represented as a PWM waveform, and then the gate voltage of the power device is regulated through the voltage regulation circuit.

[0078] Therefore, the voltage regulation circuit of this embodiment can regulate the gate voltage of the power device, thereby avoiding the situation of voltage overshoot or current overshoot of the power device during the turn-on stage and the turn-off stage to a certain extent. In this embodiment, the voltage regulation circuit can be considered as a voltage regulation circuit based on AGD.

[0079] Refer to Figure 3, the driving power supply 210 includes a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8, a third capacitor C3, a fourth capacitor C4, a fifth capacitor C5, a sixth capacitor C6, a seventh capacitor C7, a third diode D3, a fourth diode D4, a first switching transistor Q4, a second switching transistor Q5, and a transformer T1. GND_LV refers to the low-voltage ground, and GND_1 refers to the potential point connected to 0V. Figure 3 V1 shown in it represents the voltage at one end of the third capacitor, V2 represents the voltage between the third diode and the fourth capacitor, and V3 represents the voltage between the fourth diode and the fifth capacitor. Specifically, the second end of the second inductor in the voltage regulation circuit is connected to the first end of the fourth capacitor in the driving power supply, and the first end of the first inductor in the voltage regulation circuit is connected to the first end of the fifth capacitor in the driving power supply.

[0080] Figure 3 The GATE_Q1 interface shown in it receives the signal for controlling the first switching transistor, and the GATE_Q2 interface receives the signal for controlling the second switching transistor. The GATE_Q1 interface and the GATE_Q2 interface can be connected to the regulation control module in the drive control module; the connection relationships of the resistors, capacitors, switching transistors, and transformers in the driving power supply 210 are as Figure 3 shown.

[0081] Among them, Figure 3 V5 shown in it represents the voltage at the source of the fifth switching transistor, and V6 represents the voltage at the source of the fourth switching transistor. Figure 3 The voltage regulation circuit 230 shown in it is the circuit corresponding to one of the SIC MOSFETs. There can be 6 power devices 300 corresponding in the voltage driving device, and each SIC MOSFET has its own corresponding voltage regulation circuit 230.

[0082] Figure 3 A partial circuit schematic diagram of the power device 300 is shown in it. Figure 3 The circuit referred to by 300 in it can be considered as the equivalent circuit of the power device 300, and the Figure 3 circuit referred to by 300 in it can be regarded as a whole as the power device 300. In the Figure 3 circuit referred to by 300 in it, it includes a ninth resistor R9, an eighth capacitor C8, a ninth capacitor C9, a tenth capacitor C10, a third inductor L3, a fourth inductor L4, and a sixth switching transistor Q6. The connection relationships of the capacitors, resistors, inductors, and switching transistors in the power device 300 are as Figure 3 shown. In this embodiment, the ninth resistor and the gate of the sixth switching transistor can be regarded as a whole as the gate of the power device 300. The first end of the ninth resistor is connected to the second end of the fourth resistor in the voltage regulation circuit, that is, the voltage regulation circuit 230 is connected to the gate of the power device 300.

[0083] Further, referring to Figure 4 , the drive control module 100 includes a drive signal generation module 130, an adjustment control module 110, and a collection module 120. The drive signal generation module 130 is connected to the adjustment control module 110, and the adjustment control module 110 is connected to the collection module 120;

[0084] The drive signal generation module 130 is configured to generate a PWM control signal and is further configured to collect the three-phase current amplitudes of the drive device. The PWM control signal includes the first PWM signal and the second PWM signal;

[0085] The collection module 120 is configured to collect the bus voltage and the three-phase temperature amplitudes of the drive device;

[0086] The adjustment control module 110 is configured to detect the PWM control signal in the drive signal generation module 130.

[0087] It should be noted that the drive signal generation module 130 can be a Microcontroller. The drive signal generation module 130 can generate a PWM control signal. The PWM control signal includes two sets of signals, namely the upper half-bridge signal and the lower half-bridge signal. The upper half-bridge signal includes 3 PWM signals, and the lower half-bridge signal also includes 3 PWM signals. The PWM control signal includes 6 PWM signals. The first PWM signal belongs to one of these 6 PWM signals, and the second PWM signal also belongs to one of these 6 PWM signals. In this embodiment, each PWM signal in the PWM control signal can respectively control a power device 300.

[0088] The bus voltage refers to the voltage of the bus in the voltage driving device. The bus voltage can be detected by a bus voltage transformer or the like and then transmitted to the acquisition module 120. The acquisition module 120 can send the bus voltage acquired by the voltage sensor to the adjustment and control module 110. The bus can provide the voltage required for the operation of the power device 300, and the stability of the bus voltage will affect the stability of the operation of the power device 300. The voltage driving device also includes a three-phase circuit (not shown in the figure). The three-phase circuit is a circuit composed of three AC power supplies with the same frequency, equal amplitude, and a phase difference of 120° in sequence. The three-phase circuit can include phase U, phase V, and phase W. The three-phase current amplitude can be the average current value of the effective currents of phase U, phase V, and phase W in the three-phase circuit, and the three-phase temperature amplitude can be the average temperature of each power device 300 in the three phases (phase U, phase V, and phase W). In this embodiment, a half-bridge inverter structure can be used for each phase, and each half-bridge can correspondingly control one power device 300. Therefore, in this embodiment, the three-phase circuit in the driving device can control 6 power devices 300. Each half-bridge controls the positive half-cycle or negative half-cycle of the corresponding phase, and controls the opening and closing of the power device 300 through the PWM (pulse width modulation) method.

[0089] The drive signal generation module 130 can be a Microcontroller, and the model of the microcontroller can be Microcontroller SAK-TC3XX. The adjustment and control module 110 is an FPGA.

[0090] In this embodiment, by directly detecting the first PWM signal and the second PWM signal in the drive signal generation module 130, it is not necessary to add an additional detection circuit to detect the PWM signal of the power device 300, thereby reducing the detection cost of the PWM signal.

[0091] Further, in a feasible embodiment, please refer to Figure 5 , Figure 5 which is a specific connection schematic diagram of each module in the voltage driving device. Among them, the acquisition module 120 includes a receiving module 123, an analog-to-digital conversion module 122, and a second isolation driving module 121.

[0092] The receiving module 123 is connected to the analog-to-digital conversion module 122, the analog-to-digital conversion module 122 is connected to the second isolation driving module 121, and the second isolation driving module 121 is used to connect to the adjustment and control module 110.

[0093] The second isolation driving module 121 can be an Isolation chip, the analog-to-digital conversion module 122 can be an ADC chip, and the receiving module 123 can be a Multiplexer. The receiving module 123 is used to receive the bus voltage UDC_ADC collected by the voltage sensor and the three-phase temperature amplitudes Temp_MOSFET_U / V / W collected by the temperature sensor. The second isolation driving module 121 is used to isolate the FPGA from the analog-to-digital conversion module 122 to ensure the accuracy of data transmission. The signals received by the receiving module 123 are the analog signals corresponding to the bus voltage and / or the three-phase temperature amplitudes respectively. The receiving module 123 will send the received analog signals to the analog-to-digital conversion module 122. The analog-to-digital conversion module 122 converts the analog signals into digital signals and sends the digital signals to the second isolation driving module 121. The second isolation module sends the digital signals corresponding to the bus voltage and the three-phase temperature amplitudes to the FPGA for the FPGA to detect the bus voltage and the three-phase temperature amplitudes.

[0094] Referring to Figure 5 , the PWM control signals generated by the driving signal generation module 130 include six PWM signals, namely 3 PWM signals for the upper half-bridge and 3 PWM signals for the lower half-bridge. The regulation control module 110 can receive the PWM control signals generated by the driving signal generation module 130 and can also output six PWM signals based on the PWM control signals. The six output PWM signals can be represented as PWM_1 / 2 / 3 / 4 / 5 / 6, where 1 to 6 are the identifiers of the 6 PWM signals respectively. For example, in Figure 5 , the FPGA can also send out PWM signals and send the PWM signals to the interface of PWM_Vgs_1 shown in Figure 3 to drive the power device 300 to operate. PWM_Vgs_1 is one of the 6 PWM signals output by the regulation control module 110 in Figure 5 .

[0095] The driving signal generation module 130 can send the three-phase current amplitudes of the driving device to the regulation control module 110 through SPI1 and SPI2 for the regulation control module 110 to detect the three-phase current amplitudes.

[0096] Furthermore, referring to Figure 5 , the regulation control module 110 in the drive control module 100 is connected to the first isolation driving module 220 in the gate voltage regulation module 200, and the regulation control module 110 is connected to the driving power supply 210 in the gate voltage regulation module. The first isolation driving module 220 is connected to the voltage regulation circuit, so that the regulation control module 110 can establish a connection with the voltage regulation circuit 230 through the first isolation driving module 220.

[0097] The adjustment control module 110 is further configured to detect the bus voltage and the three-phase temperature amplitude collected by the acquisition module 120, and the adjustment control module 110 is further configured to detect the three-phase current amplitude collected by the drive signal generation module 130. Thus, the voltage drive device of this embodiment can detect the changes in the bus voltage, the three-phase temperature assignment, and the three-phase current amplitude.

[0098] It should be noted that the adjustment control module 110 is an FPGA, and the FPGA is connected to the drive power supply 210. Combining Figure 3 and Figure 5 , both the GATE_Q1 interface and the GATE_Q2 interface of the drive power supply 210 can be connected to the FPGA. The FPGA sends control signals to the drive power supply 210 through the GATE_Q1 interface and the GATE_Q2 interface to control the operation of the drive power supply 210. The drive power supply 210 can also output drive signals to the voltage regulation circuit 230. The voltage regulation circuit 230 can operate based on the drive signals. For example, it can adjust the gate voltage based on the drive signals. The drive signals output by the drive power supply 210 can be current signals and / or voltage signals.

[0099] The FPGA is connected to the first isolation drive module 220. The FPGA can send AGD control signals to the first isolation drive module 220. The first isolation drive module 220 sends the received AGD control signals to the voltage regulation circuit 230. The AGD control signals include 6 AGD signals, and the AGD control signals can be expressed as AGD_H1 / H2 / H3 / H4 / H5 / H6, where H1 to H6 respectively represent 6 AGD signals. Referring to Figure 3 and Figure 5 , Figure 3 as shown in AGD_1 is one of the AGD signals in AGD_H1 / H2 / H3 / H4 / H5 / H6. The voltage regulation circuit 230 adjusts the gate voltage of the power device 300 based on the received AGD signals. The AGD signals can be regarded as a kind of PWM wave, enabling the voltage regulation circuit 230 to adjust the gate voltage of the power device 300 based on the high and low level changes or duty cycle changes of the AGD signals.

[0100] Since the adjustment control module 110 is connected to the voltage regulation circuit 230 through the first isolation drive module 220, and the adjustment control module can also detect the bus voltage, the three-phase temperature amplitude, and the three-phase current amplitude, the voltage regulation circuit can adjust the gate voltage of the power device during the on stage and the off stage based on the bus voltage, the three-phase temperature amplitude, and / or the three-phase current amplitude detected by the adjustment control module, thereby enabling more accurate adjustment of the gate voltage of the power device.

[0101] For example, when the regulation control module 110 detects that the bus voltage increases or decreases, detects that the three-phase temperature amplitude is greater than the preset maximum temperature threshold or less than the preset minimum temperature threshold, and / or detects that the three-phase current amplitude is greater than the preset maximum current threshold or less than the preset minimum current threshold, the voltage regulation circuit can adjust the gate voltage of the power device during the turn-on stage or the turn-off stage, so that the power device can be more stable during the turn-on process and the turn-off process.

[0102] That is to say, in this embodiment, the regulation control module is connected to the first isolation drive module, the first isolation drive module is connected to the voltage regulation circuit, and the voltage regulation circuit is connected to the gate of the power device, so that the voltage regulation circuit can adjust the voltage of the power device during the turn-on stage and the turn-off stage based on the bus voltage, the three-phase temperature amplitude, and the three-phase current amplitude detected by the regulation control module. Also, since this embodiment can detect the moments when the power device enters the turn-on stage and the turn-off stage in advance, the gate voltage of the power device during the turn-on stage and the turn-off stage can be adjusted in a timely manner in this embodiment.

[0103] For example, when the regulation control module 110 detects that the bus voltage increases and detects that the power device 300 is in the turn-on stage, the voltage regulation circuit 230 in the gate voltage regulation module 200 can reduce the gate voltage of the power device 300 during the first transient stage and the rising stage in the turn-on stage; when the regulation control module 110 detects that the bus voltage increases and the power device 300 is in the turn-off stage, the voltage regulation circuit 230 in the gate voltage regulation module 200 can also reduce the gate voltage of the power device 300 during the second transient stage and the decay stage in the turn-off stage.

[0104] The bus voltage can provide the working voltage for the power device 300, so the stability of the bus voltage will affect the stability of the power device 300. When the power device 300 is in the ready state or in the turn-on stage of the turn-on stage, if the working voltage of the power device 300 increases, it means that the voltage stress borne by the power device 300 increases, then the current impact and oscillation in the turn-on stage will increase. When the power device 300 is in the ready state or in the turn-off stage of the turn-off stage, the turn-off tail time of the power device 300 will be prolonged, and the dead time will be compressed.

[0105] Among them, the turn-off tail time refers to the time required for the power device 300 to completely turn off after receiving the turn-off signal. When the operating voltage increases, due to the changes in the physical characteristics and circuit parameters inside the power device 300, the turn-off tail time may be extended, which may lead to the compression of the dead time. The compression of the dead time will reduce the safety of the power device 300 because the dead time is the time interval set to avoid the simultaneous conduction of the power devices 300 on the same bridge arm. When the dead time is compressed, there may be a situation of simultaneous conduction, which will reduce the safety of the power device 300. The operating voltage refers to the voltage across the source and drain of the power device 300 in the normal operating state, and the gate voltage refers to the voltage of the gate of the power device 300.

[0106] Therefore, when the voltage regulation circuit detects an increase in the bus voltage and the power device 300 is in the on state, it can reduce the gate voltage of the power device 300 in the first transient stage and the rising stage during the on stage to slow down the current impact and oscillation during the turn-on process. For example, the voltage regulation circuit adjusts the gate voltage of the power device 300 by controlling the conduction states of the first switch tube, the second switch tube, and the third switch tube.

[0107] In this embodiment, the adjustment control module 110 can be an FPGA. When the FPGA detects an increase in the bus voltage, the FPGA can send an AGD control signal to the voltage regulation circuit 230 through the first isolation drive module 220. After receiving the voltage reduction adjustment signal, the voltage regulation circuit 230 can linearly reduce the gate voltage of the power device 300 in the first transient stage and the rising stage during the on stage.

[0108] The on stage of the power device includes a first stage, a second stage, a third stage, and a fourth stage. The off stage can also be divided into 4 stages, namely a fifth stage, a sixth stage, a seventh stage, and an eighth stage. The first transient stage refers to the second stage, the rising stage refers to the third stage, the second transient stage refers to the sixth stage, and the decay stage refers to the seventh stage.

[0109] When the power device 300 is in the first stage of the turn-on phase, it indicates that the gate voltage (vgs) of the power device 300 has not reached the threshold voltage (Vth) of the power device 300; the second stage refers to the power device 300 starting to conduct. The drain current (id) of the power device 300 begins to gradually increase from 0, while the drain-source voltage (vds) begins to decrease. In the third stage, the process of the second stage continues, the drain current (id) increases rapidly, and the drain-source voltage (vds) continues to decrease. In the third stage, an overshoot of the turn-on current may occur. The fourth stage refers to when the drain current (id) reaches a stable value or approaches the load current, and the drain-source voltage (vds) also basically drops to a lower level. The fourth stage marks that the turn-on process of the power device 300 is basically completed. The fifth stage refers to the stage when the power device 300 is in a normal working state during the turn-off phase, and both the drain current (id) and the drain-source voltage (vds) remain at stable values. In the sixth stage, the gate voltage (vgs) begins to decrease, and the drain current (id) also decreases as the gate voltage decreases. In the seventh stage, the drain current (id) continues to decrease until it approaches 0. In the seventh stage, a state of overshoot of the turn-off voltage (Dvds) may occur; in the eighth stage, the power device 300 is completely turned off and is in the end state of the turn-off phase.

[0110] For example, the voltage regulation circuit in the gate voltage regulation module 200 can also increase the gate voltage of the power device 300 during the turn-on phase when the regulation control module 110 detects a decrease in the bus voltage and the power device 300 is in the turn-on phase; the voltage regulation circuit 230 can also increase the gate voltage of the power device 300 during the turn-off phase when the regulation control module 110 detects a decrease in the bus voltage and the power device 300 is in the off phase.

[0111] Under the same driving parameters, when the bus voltage decreases, it indicates that the switching speed of the power device 300 may slow down. Therefore, when a decrease in the bus voltage is detected, the gate voltage of the power device 300 during the turn-on phase can be increased to increase the turn-on speed of the power device 300, and the gate voltage of the power device 300 during the turn-off phase can be increased to increase the turn-off speed of the power device 300. The same driving parameters refer to the magnitude and direction of the driving current corresponding to the power device 300 being constant, the set dead time being constant, the frequency of the PWM signal driving the power device 300 to operate being constant, etc.

[0112] For example, the voltage regulation circuit 230 can also increase the gate voltage of the power device 300 during the second transient stage and the decay stage of the turn-off phase when the regulation control module 110 detects that the three-phase current amplitude is greater than the preset current maximum threshold and the power device 300 is in the turn-off phase;

[0113] The voltage regulation circuit 230 can also reduce the gate voltage of the power device 300 in the second transient stage and the decay stage during the turn-off stage when the regulation control module 110 detects that the three-phase current amplitude is less than a preset minimum current threshold and the power device 300 is in the turn-off stage.

[0114] It should be noted that the three-phase current amplitude refers to the current amplitude of the three-phase current, and the three-phase current amplitude can be positive or negative; when the amplitude of the three-phase current amplitude is greater than a preset maximum current threshold, the gate voltage of the power device 300 in the second transient stage and the decay stage during the turn-off stage can be increased to slow down the turn-off speed of the power device 300 and also slow down the Vds voltage impact and oscillation.

[0115] Under the same driving parameters, when the operating current of the power device 300 increases, the amplitude of the voltage impact and oscillation generated during the turn-off stage will increase. When the operating current of the power device 300 increases, the impact and oscillation of the turn-off voltage (Vds) will increase, and the Vds safety margin of the power device 300 will be compressed.

[0116] The Vds safety margin refers to the difference between the drain-source voltage of the power device 300 and the rated voltage of the power device 300 under normal operating conditions. This difference is used to ensure that the power device 300 can still operate normally without being damaged when subjected to a certain voltage fluctuation or impact. When the increase in the operating current leads to an increase in the impact and oscillation of the turn-off voltage, the actual voltage fluctuation range borne by the power device 300 will also increase. If this fluctuation range approaches or exceeds the rated voltage range of the device, then the Vds safety margin will be compressed or even disappear. When the Vds safety margin is compressed to zero or below, the device may be damaged due to overvoltage.

[0117] Therefore, the voltage regulation circuit can reduce the gate voltage of the power device 300 in the second transient stage and the decay stage during the turn-off stage when it detects that the amplitude of the three-phase current amplitude is less than a preset minimum current threshold and detects that the power device 300 is in the turn-off stage, thereby increasing the turn-off speed of the power device 300 and optimizing the loss of the power device 300. Since the change in the three-phase current amplitude has a greater impact on the power device 300 during the turn-off stage and a smaller impact on the turn-on stage, even if the three-phase current amplitude is detected to increase or decrease during the turn-on stage of the power device 300, the gate voltage of the power device 300 during the turn-on stage does not need to be adjusted based on the three-phase current amplitude.

[0118] For example, the voltage regulation circuit 230 can also increase the gate voltage of the power device 300 during the turn-on stage when the regulation control module 110 detects that the three-phase temperature amplitude is greater than a preset maximum temperature threshold and the power device 300 is in the turn-on stage;

[0119] When the regulation control module 110 detects that the three-phase temperature amplitude is less than the preset minimum temperature threshold and the power device 300 is in the on state, the voltage regulation circuit 230 can also reduce the gate voltage of the power device 300 in the on state.

[0120] The regulation control module 110 can also detect the three-phase temperature amplitude. In this embodiment, the three-phase temperature amplitude can refer to the amplitude of the three-phase temperature. The preset minimum temperature threshold and the preset maximum temperature threshold can both be determined based on the actual situation, and this embodiment does not make specific limitations in this regard.

[0121] Under the same driving parameters, as the operating temperature of the power device 300 increases, the on-state impedance Rdson of the power device 300 will increase. There are overshoots of current and voltage and a decrease in oscillation during the turn-on and turn-off processes of the power device 300, which will further increase the loss of the power device 300 and reduce the efficiency of the system where the power device 300 is located. The on-state impedance (Rdson) is the resistance value between the drain and the source of the power device 300 in the on state.

[0122] Therefore, when the regulation control module 110 detects that the three-phase temperature amplitude is greater than the preset maximum temperature threshold and the power device 300 is in the on state, the voltage regulation circuit can increase the gate voltage of the power device 300 in the on state to reduce the loss of the power device 300 and the on-state impedance of the power device 300.

[0123] When the regulation control module 110 detects that the three-phase temperature amplitude is less than the preset minimum temperature threshold and the power device 300 is in the on state, the voltage regulation circuit can reduce the gate voltage of the power device 300 in the on state to increase the on-state impedance Rdson of the power device 300. Increasing Rdson can slow down the rising speed of the current when the power device 300 is short-circuited, providing enough time for the short-circuit protection system to detect faults, process signals, and trigger protection actions, thereby ensuring the safety and stability of the voltage drive device. Since the three-phase temperature amplitude has a greater impact on the power device 300 in the on state and a smaller impact on the power device 300 in the off state, during the off state of the power device 300, the gate voltage of the power device 300 in the off state does not need to be adjusted based on the three-phase temperature amplitude.

[0124] For a better understanding of this embodiment, please refer to Figure 6 , Figure 6This is a schematic diagram of the variation of the gate voltage during the turn-on and turn-off phases in this embodiment. Since the adjustment control module 110 can detect the moment when the power device 300 enters the turn-on phase and can also detect the moment when the power device 300 enters the turn-off phase, and the turn-on phase can be divided into 4 phases, and the turn-off phase can also be divided into 4 phases. Refer to Figure 6 In the turn-on phase, it includes the first phase Ⅰ, the second phase Ⅱ, the third phase Ⅲ, and the fourth phase Ⅳ. The turn-off phase can also be divided into 4 phases, namely the fifth phase Ⅴ, the sixth phase Ⅵ, the seventh phase Ⅶ, and the eighth phase Ⅷ.

[0125] Figure 6 In , t0 is the starting moment of the first phase, t1 is the ending moment of the first phase and also the starting moment of the second phase, t2 is the ending moment of the second phase and also the starting moment of the third phase, t3 is the ending moment of the third phase and also the starting moment of the fourth phase, t4 is the ending moment of the fourth phase. t5 is the starting moment of the fifth phase, t6 is the ending moment of the fifth phase and also the starting moment of the sixth phase, t7 is the ending moment of the sixth phase and also the starting moment of the seventh phase, t8 is the ending moment of the seventh phase and also the starting moment of the eighth phase, t9 is the ending moment of the eighth phase. Figure 6 In , the abscissa t represents time, and the ordinate Vcc represents the gate voltage.

[0126] The gate voltage can be divided into a positive gate voltage and a negative gate voltage; Figure 6 The 17V shown in represents the starting value of the positive gate voltage, and -4.5V is the starting value of the negative gate voltage. Figure 6 In , L1 refers to the variation curve of the positive gate voltage of the gate voltage, L3 is the variation curve of the negative gate voltage of the gate voltage, and L2 is the waveform of the AGD signal of the voltage regulation circuit 230. The AGD signal is output by the adjustment control module 110 to the voltage regulation circuit 230 through the first isolation drive module 220. Combining Figure 3 In this embodiment, both V4 and V5 are referenced to GND_1 shown in Figure 3 . Therefore, the positive gate voltage can be considered as Figure 3 the voltage of V4 in , and the negative gate voltage can be considered as Figure 3 the voltage of V5 in . From Figure 6It can be seen from [reference] that during the first and second stages, the positive gate voltage increases linearly, and the absolute value of the negative gate voltage also increases linearly. At the beginning of the third stage, the positive gate voltage decreases linearly, and when the AGD signal changes from high level to low level during the third stage, the positive gate voltage decreases linearly. At the beginning of the third stage, the absolute value of the negative gate voltage also decreases linearly, and when the AGD signal changes from high level to low level during the third stage, the negative gate voltage decreases linearly; during the fourth stage, the positive gate voltage first increases and then decreases, and the absolute value of the negative gate voltage also first increases and then decreases. During the fifth and sixth stages, the positive gate voltage increases linearly, and the absolute value of the negative gate voltage decreases linearly. At the beginning of the seventh stage, the positive gate voltage decreases linearly, and when the AGD signal changes from high level to low level during the seventh stage, the positive gate voltage increases linearly; at the beginning of the seventh stage, the absolute value of the negative gate voltage decreases linearly, and when the AGD signal changes from high level to low level during the seventh stage, the absolute value of the negative gate voltage increases linearly; the positive gate voltage in the eighth stage first increases and then decreases, and the absolute value of the negative gate voltage also first increases and then decreases. The changing values of the positive gate voltage and the negative gate voltage are in equal proportion. It can be understood that when the sinusoidal voltage decreases linearly, the absolute value of the negative gate voltage also decreases linearly in equal proportion, and when the sinusoidal voltage increases linearly, the absolute value of the negative gate voltage also increases linearly in equal proportion.

[0127] Comparison Figure 7 , Figure 7 is a schematic diagram of the switching trajectory of a SiC MOSFET in the CGD driving mode in the prior art. Among them, V ds and i d are the drain-source voltage and drain current of the power device 300 respectively, V gs and i g are the gate-source voltage and gate current of the power device 300 respectively, V CC and V EE are the positive gate voltage and negative gate voltage of the gate voltage respectively, V th and V mp are the threshold voltage and Miller plateau voltage of the SiC MOSFET respectively, E on and E off are the turn-on loss and turn-off loss of the power device 300 respectively, △i d and △V ds are the turn-on current overshoot and turn-off voltage overshoot of the device respectively, V dc represents the DC voltage, I L can represent the current of the inductor corresponding to the power device 300; t don represents the time required for the first stage, which can be considered as the time required for the power device 300 to turn on from off, and t doff represents the time required for the fifth stage, which can be considered as the time required for the power device 300 to turn off from on.

[0128] For Figure 7 From the variation curve X1 of the gate voltage in Figure 7 , in the CGD driving mode, during the turn-on process of the power device 300, there is no process of reducing the gate voltage, and it is in an increasing or constant state. During the turn-off process of the power device 300, there is also no process of increasing the gate voltage, and it is in a decreasing or constant state. Therefore, it may be difficult to ensure the reliability of the power device 300. Figure 7 In Figure 7 , X2 is the variation curve of the gate current, X3 is the variation curve of the drain-source voltage, and X4 is the variation curve of the drain current.

[0129] Since in this embodiment, the control module can be adjusted to detect in advance the moments when the power device enters the turn-on stage and the turn-off stage, thus providing sufficient gate voltage adjustment time for the voltage adjustment circuit, and can more effectively adjust the gate voltage of the power device, ensuring the stability and reliability of the power device. There is no need to use an additional detection circuit to detect the turn-on moment and turn-off moment of the power device, reducing the circuit design cost.

[0130] And since this embodiment can accurately detect the time when the power device enters the turn-on stage and the turn-off stage, it can also accurately determine the time when it enters the first transient stage and the rising period in the turn-on stage, and can also accurately determine the time when it enters the second transient stage and the decay period in the turn-off stage. Therefore, when it is necessary to adjust the gate voltage of the power device in the first transient stage and the rising period in the turn-on stage, or in the second transient stage and the decay stage in the turn-off stage when detecting an increase or decrease in the bus voltage, etc., it can be adjusted more accurately, thereby improving the effectiveness of the adjustment.

[0131] Furthermore, it is also convenient to ensure the operation safety of the power device, improving the stability and reliability of the power device. And on the premise of ensuring safety, it can also ensure the maximum current and power output of the power device, improving the utilization rate of the power device and the economy of the product corresponding to the power device in the actual application process.

[0132] The present utility model also provides a new energy vehicle, and the new energy vehicle includes all the technical solutions of all the embodiments of the above voltage driving device. Compared with the prior art, the beneficial effects of the new energy vehicle provided by the embodiments of the present utility model are the same as those of the voltage driving method provided by the above embodiments, and will not be elaborated here.

[0133] The above are only the preferred embodiments of the present utility model, and do not limit the patent scope of the present utility model. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present utility model, or directly or indirectly applied in other related technical fields, shall be equally included in the patent scope of the present utility model.

Claims

1. A voltage driving device, characterized in that, The voltage driving device includes a driving control module, a gate voltage regulating module, and a power device. The driving control module is connected to the gate voltage regulating module, and the gate voltage regulating module is connected to the gate of the power device; The driving control module is configured to detect a first PWM signal of a same-phase transistor in the bridge arm segment where the power device is located, and is further configured to detect a second PWM signal of the bridge arm segment where the power device is located; The gate voltage regulating module is configured to regulate the gate voltage of the power device during the turn-on stage when the driving control module detects that the first PWM signal is turned off; The gate voltage regulating module is further configured to regulate the gate voltage of the power device during the turn-off stage when the driving control module detects that the second PWM signal is turned off based on a preset phase-shifted PWM signal, and the preset phase-shifted PWM signal is used to compensate for the delay time of signal transmission between the driving control module and the power device.

2. The voltage driving device according to claim 1, wherein, The gate voltage regulating module includes a driving power supply, a first isolation driving module, and a voltage regulating circuit; The driving power supply is connected to the voltage regulating circuit, the driving power supply is connected to the driving control module, the first isolation driving module is connected to the driving control module, the first isolation driving module is connected to the voltage regulating circuit, and the voltage regulating circuit is connected to the gate of the power device; The voltage regulating circuit is configured to regulate the gate voltage of the power device.

3. The voltage driving device according to claim 2, wherein The voltage regulating circuit includes a first inductor, a second inductor, a first diode, a second diode, a first resistor, a second resistor, a third resistor, a fourth resistor, a first capacitor, a second capacitor, a first switching tube, a second switching tube, and a third switching tube; The first end of the first inductor is connected to the anode of the first diode, the cathode of the first diode is connected to the first end of the first resistor, the second end of the first resistor is connected to the drain of the third switching tube, the source of the third switching tube is connected to the anode of the second diode, the cathode of the second diode is connected to the first end of the second inductor, the gate of the third switching tube is connected to a voltage regulating interface, and the second end of the first inductor and the second end of the second inductor are connected to the driving power supply; The first end of the first capacitor is connected to the source of the first switching tube, the gate of the first switching tube is connected to the first end of the second resistor, the drain of the first switching tube is connected to the first end of the fourth resistor, the first end of the fourth resistor is connected to the drain of the second switching tube, the gate of the second switching tube is connected to the first end of the third resistor, the second end of the third resistor and the second end of the second resistor are connected to a control interface, the source of the second switching tube is connected to the first end of the second capacitor, the second end of the second capacitor is grounded, the second end of the first capacitor is grounded, the first end of the first resistor is connected to the first end of the first capacitor, and the second end of the fourth resistor is connected to the power device.

4. The device according to claim 1, characterized in that, The driving control module includes a driving signal generation module, an adjustment control module, and a collection module. The driving signal generation module is connected to the adjustment control module, and the adjustment control module is connected to the collection module; The driving signal generation module is used to generate a PWM control signal and also to collect the three-phase current amplitudes of the driving device. The PWM control signal includes the first PWM signal and the second PWM signal; The acquisition module is used to collect the bus voltage and the three-phase temperature amplitudes of the driving device; The adjustment and control module is used to detect the PWM control signal in the driving signal generation module.

5. The device according to claim 4, characterized in that, The adjustment and control module is also used to detect the bus voltage and the three-phase temperature amplitudes collected by the acquisition module. The adjustment and control module is also used to detect the three-phase current amplitudes collected by the driving signal generation module.

6. The device according to claim 4, characterized in that, The adjustment and control module is an FPGA.

7. The device according to claim 4, characterized in that The acquisition module includes a receiving module, an analog-to-digital conversion module, and a second isolation driving module; The receiving module is connected to the analog-to-digital conversion module, the analog-to-digital conversion module is connected to the second isolation driving module, and the second isolation driving module is used to connect to the adjustment and control module.

8. The device according to any one of claims 1 to 7, characterized in that, The adjustment and control module in the drive control module is connected to the first isolation driving module in the gate voltage adjustment module, and the adjustment and control module is connected to the drive power supply in the gate voltage adjustment module.

9. The device according to claim 1, wherein, The power device is a SiC MOSEFT.

10. A new energy vehicle, characterized in that, The new energy vehicle includes a voltage driving device as described in any one of claims 1 to 8.

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