MOS (Metal Oxide Semiconductor) tube auxiliary system matched with mountain electric motorcycle master control system for three-axis gyroscope motion and Hall current detection

Abstract

The utility model discloses a metal oxide semiconductor (MOS) tube auxiliary system matched with a mountain electric motorcycle master control system for three-axis gyroscope motion and Hall current detection, which comprises a three-phase MOS tube driver and a power supply filter, and a plurality of MOS tube driving circuits are connected in each phase power output circuit of the three-phase MOS tube driver; and in any phase of MOS tube driving circuit, an MOS tube interelectrode protection circuit is arranged between the G-S poles of the upper tube of the MOS tube driving circuit and the lower tube of the MOS tube driving circuit. According to the MOS tube aluminum substrate electric control auxiliary system, a plurality of N-MOS tube groups which are connected in parallel and have higher cost performance are used, so that larger working current is obtained, the loading capacity of an electric vehicle is improved, the overall power consumption and temperature rise of a circuit board are reduced, and the heat dissipation problem of the MOS tube aluminum substrate is solved. According to the utility model, the switching conversion speed of the N-MOS transistor is improved, the switching response time of the MOS transistor is reduced, the loading capacity of the three-phase motor is improved, and the loading characteristic of the electric vehicle is further improved.

Description

Technical Field

[0001] The utility model relates to a mountain electric motorcycle, specifically to a MOS tube auxiliary system matched with the main control system of a mountain electric motorcycle related to the movement of a 3-axis gyroscope and Hall current detection. Background Art

[0002] In the MOS tube aluminum substrate electric control auxiliary system of a mountain electric motorcycle, although it has many advantages, there are also the following defects and challenges. These defects are mainly reflected in aspects such as heat dissipation management, system complexity, cost, structure, water pipe path, reliability, stability, and anti-interference ability.

[0003] I. Limitations of heat dissipation management:

[0004] Although the MOS tube aluminum substrate electric control system has good heat dissipation performance, heat dissipation management is still an extremely important challenge in the case of high and low temperatures, high loads, or continuous or long-term high-power and large-current outputs. Especially in various complex application scenarios of mountain electric motorcycles, the vehicle often needs to drive on steep slopes or in harsh mountainous areas, and control systems such as three-phase motors, the main electric control system, and the MOS tube aluminum substrate electric control system are in a high-power and large-current working state for a long time, and the MOS tubes will generate a large amount of heat energy.

[0005] Even if the aluminum substrate has good thermal conductivity, if the heat dissipation design is not sufficient, it may still lead to overheating problems of the system. Overheating will not only affect the electrical performance of the vehicle, but may also accelerate the aging of MOS tube components in the MOS tube aluminum substrate electric control system, reducing the reliability and stability of the system. In addition, in extreme environments (such as high temperature, low temperature, or high humidity), the heat dissipation ability may be limited, resulting in a decline in the performance of the electric control system.

[0006] II. System complexity and debugging difficulty:

[0007] The design and implementation of the MOS tube aluminum substrate electric control system are usually relatively complex. To ensure that the system can work efficiently and stably, multiple factors need to be considered in the design and debugging process, such as heat management, EMC electromagnetic compatibility, safety regulations, mechanical strength, water pipe path, reliable matching of electrical performance and structural housing, etc.

[0008] This complexity not only increases the difficulty of system development, but also makes the subsequent debugging and maintenance more cumbersome. Any small problem in the design or debugging will affect the performance of the entire system. For example, for the input and output data of MOS tube control and MOS tube drive, if the data processing is not accurate enough, it may lead to deviations in the judgment of the vehicle motion state by the main electric control system and the MOS tube aluminum substrate electric control system, thus affecting the response speed and accuracy of the electric control system.

[0009] III. Cost Issues:

[0010] MOS transistors and aluminum substrates are relatively expensive electronic components and materials. The manufacturing process of MOS transistors is complex, and in high-performance applications, multiple MOS transistors are usually required to be connected in parallel in sections to shunt large current loads, which further increases the cost of the system. Although aluminum substrates have good thermal conductivity, their manufacturing and processing costs are relatively high, especially in cases where precision machining or special surface treatment processes are required, the costs will further increase.

[0011] In addition, due to the complexity of the system, the costs of development, testing, and production will also increase accordingly. This may be a relatively large burden for enterprises or products targeting the high-end and mid-end markets, thus restricting the popularization and application of such electronic control systems.

[0012] IV. Reliability and Lifespan Issues:

[0013] Although the combination of MOS transistors and aluminum substrates can provide good electrical performance, there are still potential risks in the reliability and lifespan of the system during long-term use. First of all, if MOS transistors operate continuously at high temperatures and under large currents for too long, their performance may decline, and even breakdown or failure may occur. Although aluminum substrates have good thermal conductivity, under long-term mechanical stress or environmental erosion, fatigue, corrosion, or deformation of the MOS-aluminum substrate may occur, affecting the electrical performance and reliability of the overall system.

[0014] In addition, since mountain electric motorcycles are often used in harsh environments, such as wet, dusty, or muddy road conditions, this poses relatively high requirements for the sealing and environmental resistance of the electronic control system. If the protective measures are not strict enough, water vapor or dust may penetrate into the system and accumulate continuously, leading to electrical short circuits or component damage, further affecting the electrical performance and product lifespan of the system.

[0015] V. Insufficient Anti-Interference Ability:

[0016] During the operation of a mountain electric motorcycle, it is affected by various electromagnetic interference sources, such as the high-frequency and low-frequency switching of a three-phase motor, the electromagnetic radiation of multiple switching power supplies, and external interference. Although MOS transistors have fast switching characteristics, when operating at high frequencies, the electromagnetic noise they generate is relatively large. If the electromagnetic compatibility design of the system is not perfect enough, it may cause relatively large interference to the normal operation of the digital gyroscope and Hall current sensor in the main control system of the electric vehicle, and multiple MOS transistor groups in the MOS transistor aluminum substrate auxiliary system. These interferences may lead to unstable sensor signals and inaccurate MOS transistor drive data, thus affecting the accurate judgment of the single-chip microcomputer in the main electric control system, resulting in control errors in the main electric control system. For example, electromagnetic interference may cause the gyroscope to misreport the tilt angle or motion state of the vehicle, and the current detection data of the Hall sensor may also deviate. These problems not only affect the driving experience but also may pose safety hazards.

[0017] VI. Difficulty of maintenance and repair:

[0018] Due to the complexity and high-precision requirements of the MOS transistor aluminum substrate electric control system, once a fault or performance problem occurs, the difficulty of repair and maintenance also increases accordingly. Especially in some remote areas or in the case of no professional repair equipment and technicians, the fault troubleshooting and repair of the system may require returning to the factory for processing, increasing the maintenance cost and time.

[0019] In view of this, it is necessary to make significant improvements to the existing MOS transistor aluminum substrate electric control auxiliary system. Utility Model Content

[0020] Aiming at the deficiencies in the prior art, the technical problem to be solved by the present utility model is to provide a MOS transistor auxiliary system that matches the main control system of a mountain electric motorcycle for 3-axis gyroscope motion and Hall current detection. The purpose of designing this MOS transistor auxiliary system is to: reduce costs and reduce temperature rise, better solve the heat dissipation problem, better handle the close matching connection relationship between electrical performance and structure, water pipe passages, etc., improve the stability of the system, and improve the load-carrying characteristics of the vehicle.

[0021] To solve the above technical problems, the present utility model is achieved through the following solutions: A MOS transistor auxiliary system of the present utility model that matches the main control system of a mountain electric motorcycle for 3-axis gyroscope motion and Hall current detection includes three-phase MOS transistor drive and power supply filtering. Multiple MOS transistor drive circuits are connected in each phase electrical output circuit of the three-phase MOS transistor drive;

[0022] In any one phase of the MOS transistor drive circuit, a MOS transistor inter-pole protection circuit is provided between the G-S poles of the upper transistor and the lower transistor of the MOS transistor drive circuit;

[0023] Any one-phase MOS transistor inter-pole protection circuit includes:

[0024] N-MOS transistors Q1 and Q2, the source S of the N-MOS transistor Q1 is connected to the drain D of the N-MOS transistor Q2, the source S of the N-MOS transistor Q2 is connected to the large current ground terminal PGND, and the drain D of the N-MOS transistor Q1 is connected to the power supply terminal B+;

[0025] Resistor R1, the first end of this resistor R1 is connected to the gate G of the N-MOS transistor Q1, it is a current-limiting resistor, and the second end of the resistor R1 is connected to the PWM adjustable pulse signal pin controlled by the single-chip microcomputer in the electronic control main board system;

[0026] Resistor R3, the first end of this resistor R3 is connected to the gate G of the N-MOS transistor Q2, it is a current-limiting resistor, and the second end of the resistor R3 is connected to the PWM adjustable pulse signal pin controlled by the single-chip microcomputer in the electronic control main board system;

[0027] Resistor R2, capacitor C1 and zener diode ZD1, the first end after the parallel connection of the resistor R2, capacitor C1 and zener diode ZD1 is connected to the gate G of the N-MOS transistor Q1, and the second end after the parallel connection of the resistor R2, capacitor C1 and zener diode ZD1 is connected to the source S of the N-MOS transistor Q1, where the negative electrode of this zener diode ZD1 is connected to the gate G of the N-MOS transistor Q1;

[0028] Resistor R4, capacitor C2 and zener diode ZD2, the first end after the parallel connection of the resistor R4, capacitor C2 and zener diode ZD2 is connected to the gate G of the N-MOS transistor Q2, and the second end after the parallel connection of the resistor R4, capacitor C2 and zener diode ZD2 is connected to the source S of the N-MOS transistor Q2, where the negative electrode of this zener diode ZD2 is connected to the gate G of the N-MOS transistor Q2.

[0029] Further, for the three-phase MOS transistor drive and power supply filtering, B+ is provided by the electronic control main system. There is a power supply filtering capacitor bank in the MOS transistor drive and power supply filtering output circuit, and this power supply filtering capacitor bank is composed of multiple MLCC large capacitor groups through a parallel structure of zoning, slicing and grouping.

[0030] Further, the MOS transistor aluminum substrate electronic control system also includes a plurality of patch pin sockets all electrically connected to the electronic control main board system. The MOS transistor aluminum substrate electronic control system is connected to a three-phase motor. There are five patch pin sockets, and three of the patch pin sockets are all provided with NTC temperature detection sensors. The three NTC temperature detection sensors are respectively connected in the A-phase MOS transistor path, B-phase MOS transistor path, and C-phase MOS transistor path of the three-phase motor.

[0031] Further, the MOS transistor aluminum substrate electronic control system further includes an isolation circuit. The isolation circuit includes an inductor FB1, a capacitor C3, and a capacitor C4. The first end of the inductor FB1 is connected to the large current ground terminal PGND and connected to the first end of the capacitor C3. The second end of the inductor FB1 is connected to the common ground terminal GND2 and connected to the second end of the capacitor C3. The capacitor C3 and the capacitor C4 are connected in parallel.

[0032] Further, in any one-phase MOS transistor drive electrical output circuit, there are 7 parallel-connected MOS transistor drive circuits.

[0033] Furthermore, the connection structure of the 7 parallel-connected MOS transistor drive circuits is as follows: the B+ terminals in the 7 parallel-connected MOS transistor drive circuits are interconnected, the PGND terminals are interconnected, the GAH terminals are interconnected, the GAL terminals are interconnected, the PHASE_A terminals are interconnected, the GBH terminals are interconnected, the GBL terminals are interconnected, and the PHASE_B terminals are interconnected; the GCH terminals are interconnected, the GCL terminals are interconnected, and the PHASE_C terminals are interconnected.

[0034] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0035] 1. The MOS transistor aluminum substrate electronic control system of the present invention uses a plurality of parallel-connected N-MOS transistor groups with higher cost performance to obtain a larger working current, improve the load-carrying capacity of electric vehicles, reduce the overall power consumption and temperature rise of the circuit board, and solve the heat dissipation problem of the MOS transistor aluminum substrate.

[0036] 2. The inter-pole protection circuit between the G-S poles of the MOS transistors in the present invention is to protect high-power N-MOS transistors from damage, improve the switching conversion speed of the N-MOS transistors, reduce the switching response time of the MOS transistors, improve the load-carrying capacity of the three-phase motor, and further improve the load-carrying characteristics of electric vehicles.

[0037] 3. The great improvement in the electrical performance, structure, and tight connection relationship of the water pipe passages, etc. between the main electronic control system and the MOS transistor aluminum substrate electronic control system of the present invention makes the operation of the entire electric vehicle more stable. Description of the Drawings

[0038] Figure 1 It is a principle block diagram of three-phase MOS transistor drive and power supply filtering of the MOS transistor aluminum substrate electronic control system of the present invention.

[0039] Figure 2 It is a connection block diagram of the temperature detection sensor in the electronic control main board system of the present invention.

[0040] Figure 3 It is a protection circuit diagram between the G-S poles of a group of MOS transistors of the present invention.

[0041] Figure 4This is the isolation circuit diagram of the utility model. Specific implementation manners

[0042] Next, the technical solutions in the embodiments of the present utility model will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present utility model, so that the advantages and features of the present utility model can be more easily understood by those skilled in the electronic field, thereby making a clearer and more definite definition of the protection scope of the present utility model. Obviously, the described embodiments of the present utility model are only a part of the embodiments of the present utility model, rather than all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those skilled in the electronic field without creative efforts shall fall within the protection scope of the present utility model.

[0043] In addition, the technical features involved in different implementation manners of the present utility model described below can be combined with each other as long as they do not conflict with each other.

[0044] Embodiment 1: The specific structure of the present utility model is as follows:

[0045] Please refer to the appendix Figures 1-4 , a MOS tube auxiliary system of the present utility model that matches the main control system of a mountain electric motorcycle for 3-axis gyroscope motion and Hall current detection. The hardware design of the MOS tube auxiliary system includes the following five major parts:

[0046] The first part is the MOS tube drive and power supply filtering part. The MOS tube aluminum substrate electric control system includes three-phase MOS tube drive and power supply filtering. Multiple MOS tube drive circuits are connected in each phase electric output circuit of the three-phase MOS tube drive. The B+(96V) lithium battery power supply voltage is supplied to the filter capacitor bank. The B+(96V) lithium battery power supply is output through DC-DC. The B+(96V) lithium battery is a rechargeable power supply, and a power supply filter capacitor bank is provided in its output circuit. The power supply filter capacitor bank is composed of 120 MLCC large capacitor groups through a parallel structure of zoning, slicing, and grouping. The MLCC large capacitor group is the filter capacitor group mentioned above.

[0047] The second part is multiple patch pin sockets that are all electrically connected to the electric control main board system. The MOS tube aluminum substrate electric control system is connected to a three-phase MOS tube drive. There are five patch pin sockets, and three of the patch pin sockets are each provided with an NTC temperature detection sensor. The three NTC temperature detection sensors are respectively connected in the A-phase MOS tube path, B-phase MOS tube path, and C-phase MOS tube path of the three-phase MOS tube drive. The three NTC temperature detection sensors respectively monitor the temperature of the A-phase MOS tube path, B-phase MOS tube path, and C-phase MOS tube path of the three-phase MOS tube drive in real time, and provide a temperature compensation correction value for the MOS tube drive to the single-chip microcomputer, making the motion monitoring value of the vehicle more accurate and precise.

[0048] The third part is the core part of the electric control system of the MOS transistor aluminum substrate of the present utility model: In any set of MOS transistor drive circuits, a MOS transistor inter-pole protection circuit is provided between the G-S poles of the upper transistor and the lower transistor of the MOS transistor drive circuit. Any one-phase MOS transistor inter-pole protection circuit includes:

[0049] N-MOS transistors Q1 and Q2, the source S of the N-MOS transistor Q1 is connected to the drain D of the N-MOS transistor Q2, the source S of the N-MOS transistor Q2 is connected to the large current ground terminal PGND, and the drain D of the N-MOS transistor Q1 is connected to the power supply terminal B+;

[0050] Resistor R1, the first end of the resistor R1 is connected to the gate G of the N-MOS transistor Q1, it is a current limiting resistor, and the second end of the resistor R1 is connected to the PWM adjustable pulse signal pin controlled by the single-chip microcomputer in the electric control main board system;

[0051] Resistor R3, the first end of the resistor R3 is connected to the gate G of the N-MOS transistor Q2, it is a current limiting resistor, and the second end of the resistor R3 is connected to the PWM adjustable pulse signal pin controlled by the single-chip microcomputer in the electric control main board system;

[0052] Resistors R2, capacitor C1 and zener diode ZD1, the first ends of the resistor R2, capacitor C1 and zener diode ZD1 in parallel are connected to the gate G of the N-MOS transistor Q1, and the second ends of the resistor R2, capacitor C1 and zener diode ZD1 in parallel are connected to the source S of the N-MOS transistor Q1, wherein the negative electrode of the zener diode ZD1 is connected to the gate G of the N-MOS transistor Q1;

[0053] Resistors R4, capacitor C2 and zener diode ZD2, the first ends of the resistor R4, capacitor C2 and zener diode ZD2 in parallel are connected to the gate G of the N-MOS transistor Q2, and the second ends of the resistor R4, capacitor C2 and zener diode ZD2 in parallel are connected to the source S of the N-MOS transistor Q2, wherein the negative electrode of the zener diode ZD2 is connected to the gate G of the N-MOS transistor Q2.

[0054] The inter-pole protection circuits of the MOS transistors in phase A, phase B, and phase C are the same, only with different phases. In any three-phase MOS transistor-driven electrical output circuit, there are 7 parallel-connected MOS transistor drive circuits. The connection structure of the 7 parallel-connected MOS transistor drive circuits is as follows: the B+ terminals of the 7 parallel-connected MOS transistor drive circuits are interconnected, the PGND terminals are interconnected, the GAH terminals are interconnected, the GAL terminals are interconnected, and the PHASEA terminals are interconnected. The GBH terminals are interconnected, the GBL terminals are interconnected, and the PHASE_B terminals are interconnected; the GCH terminals are interconnected, the GCL terminals are interconnected, and the PHASE_C terminals are interconnected. Multiple parallel-connected N-MOS transistor groups are used to obtain a larger working current, improve the load-carrying capacity of electric vehicles, reduce the overall power consumption and temperature rise of the circuit board, and solve the heat dissipation problem of the MOS transistor aluminum substrate.

[0055] The following N-MOS transistors refer to the N-MOS transistors in all MOS transistor drive circuits.

[0056] The characteristics of each N-MOS transistor in the MOS transistor drive circuit of the present invention are as follows: 1) V-DSS = 100V; I-D (at room temperature of 25°C) = 380A. 2) Extremely high current. At V-GS = 10V, the R-DS on-resistance = 1.2mΩ, and the on-resistance is relatively small. 3) Reliable and stable, TOLL-8-9PIN package. 4) Provide halogen-free devices. Compatible with ROHS. 5) Wide operating temperature range: -55 to 175°C. 6) High power. At room temperature of 25°C, P-MAX maximum = 428.5W, I-D-MAX maximum = 380A. 7) Static characteristics: R-DS on-resistance = 1.2mΩ, V-GS = 3V, I-GSS = 0.1uA. F frequency = 1MHZ. 8) Dynamic characteristics: R-G = 1.3Ω, total switching time = 0.395mS, fast switching speed. Input capacitance: 12.3nF, output capacitance: 5.12pF. 9) Dimensions: 9.9X11.68X2.3mm. 10) There is an exposed copper foil area on the back of the component: 7.1X8.25mm, which is conducive to heat dissipation. 11) Pin 1 of the N-MOS transistor = gate = G terminal; pins 2 / 3 / 4 / 5 / 6 / 7 / 8 of the N-MOS transistor = source = S terminal; pin 9 of the N-MOS transistor = drain = D terminal. 12) There are a total of three rows of 7 groups of N_MOS transistors, that is, there are 42 N-MOS transistors in this system; the upper transistor and the lower transistor of each group of N-MOS transistors are connected back-to-back.

[0057] The following is the working principle of the inter-pole protection circuit of the MOS transistors of the present invention:

[0058] 1. Taking the inter-pole protection circuit of the A-phase MOS transistor as an example, resistor R1 is the gate current-limiting resistor of N-MOS transistor Q1, resistor R3 is the gate current-limiting resistor of N-MOS transistor Q2, capacitor C1, resistor R2, and zener diode ZD1 form the protection circuit between the gate and source of N-MOS transistor Q1. Capacitor C2, resistor R4, and zener diode ZD2 form the protection circuit between the gate and source of N-MOS transistor Q2. The protection circuit can prevent the two N-MOS transistors from being damaged by breakdown under excessive voltage and current impacts. GAH and GAL are 5V PWM adjustable pulse signals controlled by a single-chip microcomputer in the main control system. The source S of N-MOS transistor Q1 and the drain D of N-MOS transistor Q2 are connected to PHASEA. PHASEA is output and fed back to the A-phase MOS transistor drive circuit of the main control system, and at the same time output to the external system.

[0059] 2. Action timing: For the A phase, the single-chip microcomputer GAH of the main control system sends a signal → applied to the A-phase drive input of the main control system → the A-phase drive output GAH of the main control system → the connection socket between the main control system and the MOS transistor aluminum substrate electronic control auxiliary system → the gate of Q1 - N-MOS transistor → B + total lithium battery supply voltage → applied to the drain of Q1 - N-MOS transistor → the source of Q1 - N-MOS transistor will output a control signal that is either on or off → to the PHASEA terminal of the A-phase MOS transistor drive signal of the main control system, and fed back to the single-chip microcomputer. → At the same time, the signal at the PHASEA terminal is output to the external system of the MOS transistor aluminum substrate electronic control auxiliary system.

[0060] For the A phase, the single-chip microcomputer GAL of the main control system sends a signal → applied to the A-phase drive input of the main control system → the A-phase drive output GAL of the main control system → the connection socket between the main control system and the MOS transistor aluminum substrate electronic control auxiliary system → applied to the gate of Q2 - N-MOS transistor → the PHASEA terminal of the A-phase MOS transistor drive signal of the main control system is connected to the drain of Q2 - N-MOS transistor → the drain of Q2 - N-MOS transistor will output a control signal that is either on or off → to the PHASEA terminal of the A-phase MOS transistor drive signal of the main control system. → At the same time, the signal at the PHASEA terminal is output to the external system of the MOS transistor aluminum substrate electronic control auxiliary system.

[0061] The GAH signal and the GAL signal are 5V PWM adjustable pulse signals with different phases, and the phase difference is 180 degrees. That is: when the GAH signal acts, the GAL signal does not act; when the GAH signal does not act, the GAL signal acts. There is a very short conversion time between these two signals.

[0062] The following are the precautions for the inter-pole protection circuit of the MOS transistor of the present invention:

[0063] Temperature has a relatively large impact on the operating characteristics of N-MOS transistors. For the three-way A-phase / B-phase / C-phase MOS transistors and the protection circuit of the MOS transistor aluminum substrate electronic control system, the single-chip microcomputer of the main control system needs to continuously monitor the temperature change status of these three N-MOS transistor circuits, and timely correct the operating parameters of the main control system and the MOS transistor aluminum substrate electronic control auxiliary system, so that various operating states of the vehicle can be continuously monitored, ensuring the high-precision and stable operation of the vehicle.

[0064] ② In a complex terrain environment, due to the large heat generation of N-MOS transistors, it is necessary to provide reliable, stable and uniform water channel cooling measures (a continuous and curved long water channel in sections) for the MOS transistor aluminum substrate electronic control auxiliary system, which is a condition for ensuring the high-precision and stable operation of the vehicle.

[0065] ③ When multiple N-MOS transistors are used in parallel in a multi-stage and multi-transistor configuration, it is necessary to ensure the isolation of high-current ground signals and ordinary ground signals. The isolation circuit is shown in Figure 4 .

[0066] As Figure 4 shown. The isolation circuit includes an inductor FB1, a capacitor C3, and a capacitor C4. The first end of the inductor FB1 is connected to the high-current ground terminal PGND and connected to the first end of the capacitor C3. The second end of the inductor FB1 is connected to the ordinary ground terminal GND2 and connected to the second end of the capacitor C3. The capacitor C3 and the capacitor C4 are connected in parallel. The inductor FB1 is a 0805 package surface mount bead with an impedance value of 600 Ω ohms. The operating current at a frequency of 100 MHz is 1.5 A. The capacitor C3 is a high-frequency filter capacitor for filtering and blocking DC of low-frequency signals. The capacitor C4 is a low-frequency filter capacitor for filtering and blocking DC of high-frequency signals, and is a high-voltage and large-package surface mount capacitor. PGND is the high-current ground terminal, and GND2 is the ordinary ground terminal, which is also the common ground terminal of the low-frequency ground of the MOS transistor aluminum substrate electronic control auxiliary system and the main control system. For the A-phase / B-phase / C-phase, there will be differences in the channel impedance of each path, and there will be some differences in the selection of the bead and capacitor values. The purpose is to reduce signal interference to the lowest value, improve the isolation degree of the ground signal, and ensure the stable operation of the switching signal of the N-MOS switching transistor.

[0067] In summary, the MOS transistor aluminum substrate electronic control system of the present invention uses a plurality of parallel N-MOS transistor groups with higher cost performance to obtain a larger operating current, improve the load-carrying capacity of electric vehicles, reduce the overall power consumption and temperature rise of the circuit board, and solve the heat dissipation problem of the MOS transistor aluminum substrate.

[0068] The inter-pole protection circuit of the G-S pole of the MOS transistor of the present invention is to protect high-power N-MOS transistors from damage, improve the switching conversion speed of N-MOS transistors, reduce the switching response time of MOS transistors, improve the load-carrying capacity of three-phase motors, and thus improve the load-carrying characteristics of electric vehicles.

[0069] The great improvement of the electrical performance, structural, and tight connection relationship of the water pipe passages, etc. between the electric control main system of the present utility model and the MOS transistor aluminum substrate electric control system makes the operation of the entire electric vehicle more stable.

[0070] The above are only the preferred embodiments of the present utility model, and do not limit the patent scope of the present utility model. Any equivalent structure, equivalent framework, or equivalent process transformation made by using the content of the specification and drawings of the present utility model, or directly or indirectly applied in other related electronic technology fields, shall similarly be included in the patent protection scope of the present utility model.

Claims

1. A MOS transistor auxiliary system matched with the main control system of a mountain electric motorcycle for 3-axis gyroscope motion and Hall current detection, including three-phase MOS transistor drive and power supply filtering, characterized in that, In each phase electrical output circuit driven by a three-phase MOS transistor, multiple MOS transistor drive circuits are connected; In any one of the MOS transistor drive circuits, a MOS transistor inter-pole protection circuit is provided between the gate-source electrodes of the upper transistor and the lower transistor of the MOS transistor drive circuit; Any one of the MOS transistor inter-pole protection circuits includes: An N-MOS transistor Q1 and an N-MOS transistor Q2, the source S of the N-MOS transistor Q1 is connected to the drain D of the N-MOS transistor Q2, the source S of the N-MOS transistor Q2 is connected to the large current ground terminal PGND, and the drain D of the N-MOS transistor Q1 is connected to the power supply terminal B+; A resistor R1, the first end of the resistor R1 is connected to the gate G of the N-MOS transistor Q1, it is a current-limiting resistor, and the second end of the resistor R1 is connected to the PWM adjustable pulse signal pin controlled by a single-chip microcomputer in the electronic control main board system; A resistor R3, the first end of the resistor R3 is connected to the gate G of the N-MOS transistor Q2, it is a current-limiting resistor, and the second end of the resistor R3 is connected to the PWM adjustable pulse signal pin controlled by a single-chip microcomputer in the electronic control main board system; A resistor R2, a capacitor C1, and a zener diode ZD1, the first ends of the resistor R2, the capacitor C1, and the zener diode ZD1 in parallel are connected to the gate G of the N-MOS transistor Q1, and the second ends of the resistor R2, the capacitor C1, and the zener diode ZD1 in parallel are connected to the source S of the N-MOS transistor Q1, wherein the negative electrode of the zener diode ZD1 is connected to the gate G of the N-MOS transistor Q1; A resistor R4, a capacitor C2, and a zener diode ZD2, the first ends of the resistor R4, the capacitor C2, and the zener diode ZD2 in parallel are connected to the gate G of the N-MOS transistor Q2, and the second ends of the resistor R4, the capacitor C2, and the zener diode ZD2 in parallel are connected to the source S of the N-MOS transistor Q2, wherein the negative electrode of the zener diode ZD2 is connected to the gate G of the N-MOS transistor Q2.

2. The MOS transistor auxiliary system matched with the main control system of the mountain electric motorcycle for 3-axis gyroscope motion and Hall current detection according to claim 1, characterized in that, For the three-phase MOS transistor drive and power supply filtering, B+ is provided by the electronic control main system. A power supply filtering capacitor group is provided in the MOS transistor drive and power supply filtering output circuit, and the power supply filtering capacitor group is composed of multiple MLCC large capacitor groups through a parallel structure of zoning, slicing, and grouping.

3. A MOS transistor auxiliary system matching the main control system of a mountain electric motorcycle with 3-axis gyroscope motion and Hall current detection according to claim 1, characterized in that, The MOS transistor aluminum substrate electronic control system further includes a plurality of patch pin sockets all electrically connected to the electronic control main board system. The MOS transistor aluminum substrate electronic control system is connected to a three-phase motor. There are five patch pin sockets, and three of the patch pin sockets are each provided with an NTC temperature detection sensor. The three NTC temperature detection sensors are respectively connected in the A-phase MOS transistor path, the B-phase MOS transistor path, and the C-phase MOS transistor path of the three-phase motor.

4. A MOS transistor auxiliary system matched with the main control system of a mountain electric motorcycle for 3-axis gyroscope motion and Hall current detection according to claim 1, characterized in that, The MOS transistor aluminum substrate electronic control system further includes an isolation circuit. The isolation circuit includes an inductor FB1, a capacitor C3, and a capacitor C4. The first end of the inductor FB1 is connected to the large current ground terminal PGND and connected to the first end of the capacitor C3. The second end of the inductor FB1 is connected to the common ground terminal GND2 and connected to the second end of the capacitor C3. The capacitor C3 and the capacitor C4 are in parallel.

5. A MOS transistor auxiliary system matched with the main control system of a mountain electric motorcycle for 3-axis gyroscope motion and Hall current detection according to claim 1, characterized in that, In an electrical output circuit driven by any one-phase MOS transistor, there is a MOS transistor drive circuit with 7 parallel branches.

6. The MOS transistor auxiliary system matching the main control system of the mountain electric motorcycle related to the movement of the 3-axis gyroscope and Hall current detection according to claim 5, characterized in that, The connection structure of the 7-parallel MOS transistor drive circuit is as follows: the B+ terminals of the 7-parallel MOS transistor drive circuits are interconnected, the PGND terminals are interconnected, the GAH terminals are interconnected, the GAL terminals are interconnected, the PHASE_A terminals are interconnected, the GBH terminals are interconnected, the GBL terminals are interconnected, and the PHASE_B terminals are interconnected; the GCH terminals are interconnected, the GCL terminals are interconnected, and the PHASE_C terminals are interconnected.

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