Air inlet assembly and thin film deposition device

Abstract

The utility model provides an air inlet assembly and a thin film deposition device, and the air inlet assembly comprises an upper cover plate, a lower cover plate, an upper cover plate and a lower cover plate, the at least four second air inlet channels surround the first air inlet channel and are arranged at each corner of the upper cover plate; the gas spraying plate is arranged below the upper cover plate, and a gas uniformizing cavity is formed between the gas spraying plate and the upper cover plate; an RPS reactor is arranged at the gas inlet end of each first gas inlet channel and the gas inlet end of each second gas inlet channel; a gas inlet of each RPS reactor is connected with a process gas source and a clean gas source, and a gas outlet of each RPS reactor is communicated with the corresponding first gas inlet channel or the corresponding second gas inlet channel; and the process gas or the clean gas is transmitted into the reaction cavity through the gas inlet and the gas outlet of the RPS reactor. According to the utility model, the distribution uniformity of the process gas and the cleaning gas is improved, so that the uniformity of the film-forming thickness of the substrate and the cleaning efficiency are improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor equipment, and particularly relates to an air inlet assembly and a thin film deposition device. Background Art

[0002] At present, processes such as plasma etching, Physical Vapor Deposition (PVD for short), and Chemical Vapor Deposition (CVD for short) are often used for microfabrication of semiconductor workpieces or substrates, such as manufacturing integrated circuits, flexible display screens, flat panel displays, light emitting diodes, solar cells, etc. Microfabrication manufacturing involves a variety of different processes and steps. Among them, the more widely used ones are chemical vapor deposition process and atomic layer deposition process, etc. These thin film processing processes can deposit a variety of materials, including a wide range of insulating materials, most metal materials, and metal alloy materials. The above processes are generally carried out in the vacuum reaction chamber of a thin film deposition device.

[0003] The air inlet assemblies in existing thin film deposition devices are all single-point gas feeding, and they have the following deficiencies: First, the process gas is unevenly distributed above the substrate, resulting in inconsistent film formation thickness and composition on the substrate. Especially when depositing a thin film on a substrate with a large area, the difference in film formation thickness between the edge and the center of the substrate is relatively obvious, thus reducing the product yield and performance consistency; Second, the cleaning gas is unevenly distributed in the vacuum reaction chamber, resulting in poor cleaning effect of the vacuum reaction chamber. An excessive amount of cleaning gas is required to achieve a complete cleaning effect, causing a double waste of time and cleaning gas consumption during the cleaning process, resulting in low cleaning efficiency and high cost. Summary of the Utility Model

[0004] The purpose of the utility model is to provide an air inlet assembly and a thin film deposition device to improve the distribution uniformity of the process gas and the cleaning gas, thereby improving the uniformity of the film formation thickness on the substrate and the cleaning efficiency; at the same time, reducing the consumption of the process gas and the cleaning gas and lowering the production cost.

[0005] To achieve the above object, the present utility model provides an intake assembly for a thin film deposition apparatus, which includes: an upper cover plate with a first intake channel provided at its center; at least four second intake channels disposed around the first intake channel at each corner of the upper cover plate; a gas spray plate provided below the upper cover plate, and a gas equalizing chamber is formed between the gas spray plate and the upper cover plate; an RPS reactor is provided at the intake end of each of the first intake channel and the second intake channel; an intake port of each RPS reactor is provided with a process gas branch and a cleaning gas branch, the process gas branch is connected to a process gas source, and the cleaning gas branch is connected to a cleaning gas source; when the first intake channel and the second intake channel transport process gas, the RPS reactor is in an inactive state, and the RPS reactor serves as a transmission channel for the process gas; an outlet of the RPS reactor communicates with the corresponding first intake channel or second intake channel; the process gas or cleaning gas is transmitted to the reaction chamber through the intake port and the outlet of the RPS reactor.

[0006] Optionally, the gas flow rate transported by the first intake channel is greater than the gas flow rate transported by the second intake channel.

[0007] Optionally, when the first intake channel and the second intake channel transport process gas, the ratio range of the first gas flow rate of the process gas transported by the first intake channel to the second gas flow rate of the process gas transported by the second intake channel is 20:1 to 1:1.

[0008] Optionally, when the first intake channel and the second intake channel transport cleaning gas, the ratio range of the third gas flow rate of the cleaning gas transported by the first intake channel to the fourth gas flow rate of the cleaning gas transported by the second intake channel is 20:1 to 1:1.

[0009] Optionally, an air equalizing plate is provided at the outlet end of each of the first intake channel and the second intake channel, the air equalizing plate is fixedly connected to the upper cover plate, and a plurality of ventilation holes penetrating the upper and lower surfaces are provided on the air equalizing plate.

[0010] Optionally, the distance between the upper surface of the air equalizing plate and the lower surface of the upper cover plate ranges from 2 to 30 mm.

[0011] Optionally, an air equalizing block is provided on the air equalizing plate, the air equalizing block is located at the center of the air equalizing plate, and a diversion groove is provided on the side wall of the air equalizing block.

[0012] Optionally, the outlet ends of the first intake channel and the second intake channel have a cross-section with a diameter gradually increasing from top to bottom along the axis, the air equalizing block is surrounded by the outlet ends, and there is a gap between the outlet ends and the air equalizing block.

[0013] Optionally, the shape of the gas equalizing block is conical or mound-shaped.

[0014] The present utility model further provides a thin film deposition device, which includes: a reaction chamber; an intake assembly as described above is installed on the upper part of the reaction chamber; the gas spraying plate has an air outlet channel penetrating through the upper and lower surfaces, and the air outlet channel communicates the gas equalizing chamber with the reaction chamber; a base disposed opposite to the intake assembly, located at the lower part of the reaction chamber, for carrying a substrate.

[0015] Compared with the prior art, the technical solution of the present utility model has at least the following advantages: By providing corresponding first intake channels and second intake channels at the center and each corner of the upper cover plate, process gas or cleaning gas can be input simultaneously from the center and corners of the upper cover. Each of the second intake channels located at the corners compensates for the supply of process gas or cleaning gas at each corner of the reaction chamber, reducing the diffusion distance of the process gas or cleaning gas input from the first intake channel from the center to the corners, improving the distribution uniformity of the process gas or cleaning gas at the center and corners of the reaction chamber, and at the same time improving the gas equalizing effect of the process gas or cleaning gas in the gas equalizing chamber, thereby improving the film formation uniformity of the substrate and the cleaning efficiency.

[0016] At the same time, by providing corresponding RPS reactors at the intake ends of each first intake channel and second intake channel, the distance from the RPS reactor to the reaction chamber is shortened, thereby reducing the transmission loss of active ions or free radicals of the cleaning gas, ensuring that more active ions and free radicals participate in the cleaning process, and improving the cleaning efficiency.

[0017] In addition, a process gas branch and a cleaning gas branch are provided at the intake port of each RPS reactor. The process gas branch is connected to the process gas source, and the cleaning gas branch is connected to the cleaning gas source. When performing the cleaning process, the deposits in the gas pipeline of the process gas branch can also be cleaned simultaneously, avoiding the introduction of deposits into the reaction chamber by the process gas during the next process and causing particle contamination, and improving the manufacturing yield.

[0018] Furthermore, by providing a gas equalizing plate and a gas equalizing block at the outlet ends of the first intake channel and the second intake channel, the process gas or cleaning gas can flow around along the side wall of the gas equalizing block and uniformly diffuse around the gas equalizing chamber along the radial direction of the gas equalizing plate, improving the gas equalizing effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a schematic cross-sectional side view of an intake assembly according to an embodiment of the present utility model;

[0020] Figure 2 It is a schematic cross-sectional top view of an intake assembly according to an embodiment of the present utility model. Detailed Implementation Modes

[0021] The following will combine the accompanying drawings in the embodiments of the present utility model to elaborate in detail on the technical solutions, structural features, achieved objectives, and effects in the embodiments of the present utility model.

[0022] It should be noted that the accompanying drawings adopt a very simplified form and all use non-precise scales, only for conveniently and clearly assisting in explaining the purpose of the implementation mode of the present utility model, and not for limiting the limiting conditions for the implementation of the present utility model. Therefore, it does not have technical substantive significance. Any modification of the structure, change in the proportional relationship, or adjustment of the size, without affecting the effects that the present utility model can produce and the objectives that can be achieved, should still fall within the scope covered by the technical content disclosed by the present utility model.

[0023] It should be noted that in the present utility model, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the term "comprising", "including", or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only the explicitly listed elements, but also other elements not explicitly listed, or elements inherent to such a process, method, article, or device.

[0024] In a plasma processing device, such as an etching device, a thin film deposition device, or a plasma enhanced chemical vapor deposition device (PECVD), a gas inlet assembly provided at the top of the reaction chamber is usually used to introduce a processing gas into the gas distribution chamber. After the processing gas is mixed in the gas distribution chamber, the processing gas is then transmitted to above the substrate in the reaction chamber through the gas distribution chamber. The existing gas inlet assembly only includes one gas feeding point, and the gas feeding point is generally located at the center of the gas inlet assembly. The processing gas includes a process gas and a cleaning gas. When the process gas is transmitted from the central gas feeding point of the gas inlet assembly into the gas distribution chamber, the process gas will diffuse from the center of the gas distribution chamber to the surroundings. Since the process gas contains multiple different types of gases and there are differences in the viscosities of different types of gases, the diffusion distances of different types of gases in the reaction chamber are different, resulting in uneven gas distribution in the reaction chamber. Specifically, at the same process temperature and the same diffusion time, the gas with a low viscosity has a fast diffusion speed and a long diffusion distance, while the gas with a high viscosity has a slow diffusion speed and a short diffusion distance, resulting in different gas compositions at different positions in the reaction chamber, causing uneven gas mixing, and further causing different gas compositions above the substrate in the reaction chamber, ultimately resulting in uneven film formation on the substrate.

[0025] Furthermore, when the cleaning gas is transmitted from the central gas feeding point of the intake assembly to the reaction chamber, the cleaning gas also diffuses from the center of the reaction chamber to the periphery of the reaction chamber. Supplying the cleaning gas only from the central position will result in insufficient content of cleaning free radicals in the cleaning gas diffused to the periphery of the reaction chamber, thus unable to effectively clean the side walls around the reaction chamber. If complete cleaning of the reaction chamber is to be achieved, an excessive amount of cleaning gas needs to be input into the gas distribution chamber, which will cause waste of cleaning gas and increase in cost.

[0026] To address the above deficiencies, the idea adopted by the present utility model is to arrange a plurality of corner gas feeding points around the central gas feeding point of the intake assembly, that is, to add intake channels for transmitting the process gas to the reaction chamber at the four corners of the intake assembly, so that the process gas can be transmitted to the reaction chamber from the center and corners of the intake assembly simultaneously, reducing the diffusion distance difference between the process gases at different positions in the reaction chamber. Through the gas compensation at the corner gas feeding points, the process gas can be evenly distributed in the reaction chamber. At the same time, the gas distribution uniformity in the gas distribution chamber can be improved through the corner gas feeding points, enhancing the gas distribution effect, further improving the uniform distribution of the process gas in the reaction chamber, and improving the film forming uniformity and cleaning efficiency.

[0027] Based on the above utility model idea, as Figure 1 and Figure 2 shown, an embodiment of the present utility model provides an intake assembly 100. The intake assembly 100 is disposed at the top of the reaction chamber 200 and is used to introduce process gas or cleaning gas into the reaction chamber 200. It includes: an upper cover plate 101, with a first intake channel 111 provided at its center. The first intake channel 111 penetrates the upper cover plate 101 up and down and is used to transmit process gas or cleaning gas; at least four second intake channels, which are arranged around the first intake channel 111 at each corner of the upper cover plate 101. Each of the second intake channels penetrates the upper cover plate 101 up and down and is used to transmit process gas or cleaning gas; a gas spraying plate 102, which is disposed below the upper cover plate 101. A gas distribution chamber 103 is formed between the gas spraying plate 102 and the upper cover plate 101, and a plurality of air outlet channels 121 are provided on the gas spraying plate 102. The air outlet channels 121 penetrate the gas spraying plate 102 up and down to connect the gas distribution chamber 103 and the reaction chamber 200. In some application scenarios, the gas spraying plate 102 usually has a size greater than or equal to that of the substrate W to be processed, so as to ensure that the gas can uniformly fill the space above the substrate W when flowing out of the air outlet channels 121, providing conditions for the uniform generation of subsequent plasma.

[0028] Specifically, in this embodiment, as Figure 2 shown, the upper cover plate 101 is evenly divided into 4 corners with the first intake channel 111 as the center (i.e.,Figure 2 (which is divided into four regions by the dashed line in the middle), namely the first corner 101a, the second corner 101b, the third corner 101c, and the fourth corner 101d. A first-corner second intake channel 112a, a second-corner second intake channel 112b, a third-corner second intake channel 112c, and a fourth-corner second intake channel 112d are respectively arranged corresponding to each corner. By arranging the corresponding second intake channels at each corner on the upper cover plate 101, process gas or cleaning gas can be input simultaneously from the center and corners of the upper cover plate 101. The respective second intake channels 112a, 112b, 112c, 112d located at the corners compensate for the supply of process gas or cleaning gas at each corner of the reaction chamber 200, reduce the diffusion distance of the process gas or cleaning gas input from the first intake channel 111 moving from the center to the corners, improve the distribution uniformity of the process gas and cleaning gas at the center and corners of the reaction chamber 200, and thus improve the film formation uniformity of the substrate and the cleaning efficiency. At the same time, the process gas or cleaning gas input from the respective second intake channels 112a, 112b, 112c, 112d at the corners of the upper cover plate 101 also improves the gas distribution uniformity in the gas distribution chamber 103, and thus improves the gas distribution uniformity above the substrate W.

[0029] Furthermore, an RPS reactor (Remote Plasma Source) is provided at the intake end of each of the first intake channel and the second intake channel. An intake port of each RPS reactor is provided with a process gas branch and a cleaning gas branch. The process gas branch is connected to a process gas source, and the cleaning gas branch is connected to a cleaning gas source. An outlet of each RPS reactor is communicated with the corresponding first intake channel or second intake channel for transporting the process gas or cleaning gas into the gas distribution chamber 103 and the reaction chamber 200. When the first intake channel and the second intake channel transport the process gas, the RPS reactor is in an inactive state, and the RPS reactor serves as a transmission channel for the process gas. When the first intake channel and the second intake channel transport the cleaning gas, the RPS reactor is in an active state, and the cleaning gas (such as NF3) can be dissociated into high-energy active ions or free radicals by capacitive coupling plasma method (CCP) or inductively coupled plasma method (ICP) or microwave plasma method to remove the deposits on the inner walls of the reaction chamber 200 and the gas pipelines of the process gas branch.

[0030] Specifically, as Figure 1 shown, Figure 1Schematic cross-sectional side view of the intake assembly 100 of the present embodiment, which shows the first intake passage 111, the first corner second intake passage 112a, and the second corner second intake passage 112b; a first RPS reactor 104e is provided at the intake end 1111 of the first intake passage 111, a first process gas branch 105e and a first cleaning gas branch 106e are provided at the intake port 141e of the first RPS reactor 104e, the first process gas branch 105e is connected to the first process gas source 109e, the first cleaning gas branch 106e is connected to the first cleaning gas source 110e, and its outlet 142e is connected to the first intake passage 111; a second RPS reactor 104a is provided at the intake end 1121a of the first corner second intake passage 112a, a second process gas branch 105a and a second cleaning gas branch 106a are provided at the intake port 141a of the second RPS reactor 104a, the second process gas branch 105a is connected to the second process gas source 109a, the second cleaning gas branch 106a is connected to the second cleaning gas source 110a, and its outlet 142a is connected to the first corner second intake passage 112a; wherein, the types of process gases of the first process gas source 109e and the second process gas source 109a may be the same or different; similarly, the types of cleaning gases of the first cleaning gas source 110e and the second cleaning gas source 110a may be the same or different, and are specifically set according to actual process requirements. Figure 1 and Figure 2 The settings of the intake ends and outlet ends of the second corner second intake passage 112b, the third corner second intake passage 112c, and the fourth corner second intake passage 112d shown in and are the same as those of the intake end and outlet end of the first corner second intake passage 112a, and will not be described in detail here. By providing corresponding RPS reactors at the intake ends of each first intake passage and second intake passage, the distance from the RPS reactor to the reaction chamber 200 can be shortened, thereby reducing the transmission loss of active ions or free radicals of the cleaning gas, ensuring that more active ions and free radicals participate in the cleaning process, and improving the cleaning efficiency.

[0031] Since the diffusion path of the process gas or cleaning gas input from the first intake passage 111 located at the center of the upper cover plate 101 in the reaction chamber is long from the center to the periphery, while the process gas or cleaning gas input from the second intake passages at the respective corners of the upper cover plate 101 can be directly delivered to the periphery of the reaction chamber and has a shorter diffusion path, the gas flow rate delivered by the first intake passage 111 is set to be greater than the gas flow rate delivered by the second intake passage. On the one hand, the large gas flow rate of the first intake passage 111 provides more gas input, enabling the gas input from the first intake passage 111 to diffuse faster to the periphery of the reaction chamber 200, thereby promoting the mixing with the gas input from the second intake passage to each corner of the reaction chamber 200 and improving the uniformity of gas distribution. On the other hand, the gas input through the second intake passage can reduce the gas distribution dead zone at the corners of the reaction chamber 200, thereby achieving the purpose of gas compensation distribution at the corners of the reaction chamber and improving the uniformity of gas distribution in the reaction chamber. In addition, the intake ratio of the process gas or cleaning gas in the second intake pipe can be adjusted according to the film deposition or etching thickness distribution, further enhancing the uniformity of film deposition or cleaning in the reaction chamber.

[0032] In one embodiment, as Figure 2 shown, when the first intake passage 111 and the first corner second intake passage 112a, the second corner second intake passage 112b, the third corner second intake passage 112c, and the fourth corner second intake passage 112d simultaneously deliver the process gas (such as silicon source gas and / or oxygen source gas), the ratio range of the first gas flow rate of the process gas delivered by the first intake passage 111 to the second gas flow rate of the process gas delivered by the first corner second intake passage 112a, the second corner second intake passage 112b, the third corner second intake passage 112c, and the fourth corner second intake passage 112d is 20:1 to 1:1 to compensate for the distribution of the process gas with high viscosity input from the central first intake passage 111 around the reaction chamber 200; at the same time, it also improves the uniform mixing of the process gas with high viscosity and low viscosity in the gas distribution chamber 103, thereby achieving the uniform distribution of the process gas with different viscosities in the reaction chamber.

[0033] In another embodiment, as Figure 2As shown, when the first intake channel 111 and the first-corner second intake channels 112a, second-corner second intake channels 112b, third-corner second intake channels 112c, and fourth-corner second intake channels 112d simultaneously deliver cleaning gas, the ratio range of the third gas flow rate of the cleaning gas delivered by the first intake channel 111 to the fourth gas flow rate of the cleaning gas delivered by the first-corner second intake channels 112a, second-corner second intake channels 112b, third-corner second intake channels 112c, and fourth-corner second intake channels 112d is 20:1 to 1:1, so as to achieve uniform distribution of the cleaning gas, thereby reducing the consumption of the cleaning gas. For example, if 20,000 sccm of cleaning gas is input from the first intake channel 111, only 3,000 sccm of cleaning gas needs to be input from the first-corner second intake channels 112a, second-corner second intake channels 112b, third-corner second intake channels 112c, and fourth-corner second intake channels 112d to achieve uniform distribution of the cleaning gas. This is because the cleaning gas input from the second intake channels 112a, 112b, 112c, and 112d at each corner of the upper cover plate 101 compensates for the consumption of the cleaning gas input from the first intake channel 111 as it diffuses from the center of the reaction chamber to the periphery, improving the uniformity of the cleaning gas distribution; increasing the compensation for the cleaning gas around the reaction chamber, while also reducing the diffusion consumption of active ions or free radicals in the cleaning gas, reducing the amount of cleaning gas used, improving the cleaning efficiency, and reducing costs.

[0034] To improve the uniformity of the distribution of process gas or cleaning gas in the gas distribution cavity, as Figure 1 and Figure 2 shown, taking the first intake channel 111 and the second-corner second intake channel 112b as an example, a first gas distribution plate 107e is provided at the outlet end 1112 of the first intake channel 111, and a second gas distribution plate 107b is provided at the outlet end 1122b of the second-corner second intake channel 112b. The first gas distribution plate 107e and the second gas distribution plate 107b are fixedly connected to the upper cover plate 101 through connecting members (such as bolts, screws, etc.), and a number of ventilation holes 171 penetrating the upper and lower surfaces are provided on the first gas distribution plate 107e and the second gas distribution plate 107b. In some embodiments, the distance between the upper surface of the gas distribution plate and the lower surface of the upper cover plate 101 ranges from 2 to 30 mm, and optionally, it can be 5 to 15 mm to achieve a better gas distribution effect.

[0035] By arranging a gas distribution plate with a number of ventilation holes at the air outlet ends of each intake channel, on the one hand, when the process gas or cleaning gas impacts the gas distribution plate, the diffusion direction is changed by the gas distribution plate, enabling the gas to uniformly diffuse radially around the gas distribution cavity 103 along the gas distribution plate; on the other hand, the process gas or cleaning gas can pass through the ventilation holes 171 on the gas distribution plate and enter the gas distribution cavity 103, reducing the gas flow rate of the gas entering the gas distribution cavity from the air outlet ends of each intake channel, thereby reducing the velocity difference between the gas flow rate directly below the air outlet end of the intake channel and the gas flow rate diffusing around, and improving the gas distribution effect.

[0036] Further, as Figure 1 and Figure 2 shown, a first gas distribution block 108e and a second gas distribution block 108b are respectively arranged on each of the first gas distribution plate 107e and the second gas distribution plate 107b. The first gas distribution block 108e and the second gas distribution block 108b are respectively located at the centers of the first gas distribution plate 107e and the second gas distribution plate 107b, and the side walls of the first gas distribution block 108e and the second gas distribution block 108b are provided with diversion grooves to enhance the guiding effect on the process gas or cleaning gas. Optionally, the shape of the gas distribution block is a cone or a mound shape. Figure 1 As shown in

[0037] the first gas distribution block 108e and the second gas distribution block 108b are in a conical shape, providing an oblique initial velocity for the process gas or cleaning gas to flow around, so as to prevent the process gas or cleaning gas from directly blowing onto the gas distribution plate, and further enabling the process gas or cleaning gas to flow and diffuse radially along the side wall of the gas distribution block to the gas distribution plate.

[0037] Furthermore, in order to improve the diversion and gas distribution efficiency of the gas distribution block, as Figure 1 shown, the air outlet ends 1112 of the first intake channel 111 and the air outlet ends 1122b of the second intake channel 112b at the second corner both have cross-sections with diameters gradually increasing from top to bottom along the axial direction. The first gas distribution block 108e and the second gas distribution block 108b are respectively surrounded by the air outlet ends 1112 and 1122b, and there are gaps between the air outlet ends 1112 and 1122b and the first gas distribution block 108e and the second gas distribution block 108b respectively. The process gas or cleaning gas can flow around along the side walls of the first gas distribution block 108e and the second gas distribution block 108b through these gaps, improving the uniform distribution of the gas in the gas distribution cavity 103. It should be noted that Figure 1 and Figure 2 the settings of the air outlet ends, gas distribution plates and gas distribution blocks of the first intake channel 112a, the third intake channel 112c and the fourth intake channel 112d at the first corner and the second corner shown in

[0038] As Figure 1 shown, the present utility model also provides a thin film deposition device, comprising: a reaction chamber 200; an air inlet assembly 100 disclosed in the present utility model is installed on the upper part of the reaction chamber 200 for introducing a processing gas into the reaction chamber, the processing gas includes a process gas or a cleaning gas, the process gas may include more than two reaction gases, and is respectively input into the gas distribution chamber 103 from the first air inlet channel 111 and the second air inlet channels at each corner. The gas spraying plate 102 has an air outlet channel 121 penetrating through the upper and lower surfaces, and the air outlet channel 121 communicates the gas distribution chamber 103 with the reaction chamber 200, so as to introduce the processing gas input from the first air inlet channel 111 and the second air inlet channels at each corner, and the gas in the gas distribution chamber 103 into the reaction chamber 200. Both the upper cover plate 101 and the gas spraying plate 102 in the air inlet assembly 100 can be made of metal. A base 201 disposed opposite to the air inlet assembly at the lower part of the reaction chamber 200 is used for carrying a substrate W, and a heater is disposed in the base 201 for controlling the temperature of the deposition reaction; an air extraction pump (not shown in the figure) communicated with the reaction chamber 200 is usually disposed at the bottom of the reaction chamber 200 for discharging reaction by-products from the reaction chamber and maintaining a vacuum environment in the reaction chamber 200.

[0039] Among them, the thin film deposition device is particularly suitable for processing a large-area substrate W. Because in the deposition process of the large-area substrate W, due to the relatively large area of the substrate W, the air inlet assembly with a single-point feed at the center cannot meet the requirement of the gas distribution uniformity for thin film deposition. However, by using the multi-point feed air inlet assembly disclosed in the present utility model, the process gas or the cleaning gas can be input simultaneously from the first air inlet channel at the center and the second air inlet channels at each corner, which can meet the requirement of the gas distribution uniformity for thin film deposition of the large-area substrate W, significantly improve the uniform distribution effect of the process gas above the substrate W, and at the same time, during the cleaning process, the waste of the cleaning gas can also be reduced, the cleaning efficiency can be improved, and the production cost can be reduced.

[0040] The air inlet assembly disclosed in the present utility model is not limited to being applied to a thin film deposition device for performing thin film deposition, and can also be applicable to other chemical vapor deposition devices, which will not be elaborated here.

[0041] In summary, for an air intake assembly and a thin film deposition device provided by the present utility model, by providing corresponding first air intake channels and second air intake channels at the center and each corner of the upper cover plate, process gas or cleaning gas can be input simultaneously from the center and corners of the upper cover. Each second air intake channel located at the corner compensates for the supply of process gas or cleaning gas at each corner of the reaction chamber, reduces the diffusion distance of the process gas or cleaning gas input from the first air intake channel from the center to the corner, improves the distribution uniformity of the process gas or cleaning gas at the center and corners of the reaction chamber, and also improves the gas distribution effect of the process gas or cleaning gas in the gas distribution chamber, thereby improving the film forming uniformity of the substrate and the cleaning efficiency.

[0042] Meanwhile, by providing corresponding RPS reactors at the air intake ends of each first air intake channel and second air intake channel, the distance from the RPS reactor to the reaction chamber is shortened, thereby reducing the transmission loss of active ions or free radicals of the cleaning gas, ensuring that more active ions and free radicals participate in the cleaning process, and improving the cleaning efficiency.

[0043] In addition, a process gas branch and a cleaning gas branch are provided at the air intake of each RPS reactor. The process gas branch is connected to the process gas source, and the cleaning gas branch is connected to the cleaning gas source. When performing the cleaning process, the deposits in the gas pipeline of the process gas branch can also be cleaned simultaneously, avoiding the introduction of deposits into the reaction chamber by the process gas during the next process and causing particle contamination, and improving the manufacturing yield.

[0044] Furthermore, by providing a gas distribution plate and a gas distribution block at the air outlet ends of the first air intake channel and the second air intake channel, the process gas or cleaning gas can flow around along the side wall of the gas distribution block and uniformly diffuse radially along the gas distribution plate to the periphery of the gas distribution chamber, improving the gas distribution effect.

[0045] Although the content of the present utility model has been introduced in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as a limitation to the present utility model. After those skilled in the art read the above content, various modifications and substitutions to the present utility model will be obvious. Therefore, the protection scope of the present utility model should be defined by the appended claims.

Claims

1. An air intake assembly for a thin film deposition apparatus, characterized in that, Comprising: An upper cover plate, with a first intake channel provided at its center; At least four second intake channels, which are arranged around the first intake channel at each corner of the upper cover plate; A gas spraying plate, which is arranged below the upper cover plate, and an air distribution cavity is formed between the gas spraying plate and the upper cover plate; An RPS reactor is provided at the intake end of each of the first intake channel and the second intake channel; An inlet of each RPS reactor is provided with a process gas branch and a cleaning gas branch. The process gas branch is connected to a process gas source, and the cleaning gas branch is connected to a cleaning gas source; when the first intake channel and the second intake channel transport process gas, the RPS reactor is in an inactive state, and the RPS reactor serves as a transmission channel for the process gas; An outlet of the RPS reactor communicates with the corresponding first intake channel or second intake channel; the process gas or cleaning gas is transported to the reaction chamber through the inlet and outlet of the RPS reactor.

2. The intake assembly according to claim 1, characterized in that, The gas flow rate transported by the first intake channel is greater than the gas flow rate transported by the second intake channel.

3. The intake assembly according to claim 1, characterized in that, When the first intake channel and the second intake channel transport process gas, the ratio range of the first gas flow rate of the process gas transported by the first intake channel to the second gas flow rate of the process gas transported by the second intake channel is 20:1 to 1:

1.

4. The intake assembly according to claim 1, wherein When the first intake channel and the second intake channel transport cleaning gas, the ratio range of the third gas flow rate of the cleaning gas transported by the first intake channel to the fourth gas flow rate of the cleaning gas transported by the second intake channel is 20:1 to 1:

1.

5. The intake assembly according to claim 1, characterized in that, An air distribution plate is provided at the outlet end of each of the first intake channel and the second intake channel. The air distribution plate is fixedly connected to the upper cover plate, and a number of ventilation holes penetrating the upper and lower surfaces are provided on the air distribution plate.

6. The intake assembly according to claim 5, wherein, The distance between the upper surface of the air distribution plate and the lower surface of the upper cover plate ranges from 2 to 30 mm.

7. The intake assembly according to claim 5, characterized in that, An air distribution block is provided on the air distribution plate. The air distribution block is located at the center of the air distribution plate, and a diversion groove is provided on the side wall of the air distribution block.

8. The intake assembly according to claim 7, characterized in that, The outlet ends of the first intake channel and the second intake channel have a cross-section with a diameter gradually increasing from top to bottom along the axial direction. The air distribution block is surrounded by the outlet ends, and there is a gap between the outlet ends and the air distribution block.

9. The intake assembly according to claim 7, characterized in that, The shape of the air distribution block is a cone or a mound.

10. A thin film deposition apparatus, characterized in that, Comprising: A reaction chamber; The upper part of the reaction chamber is equipped with an intake assembly as described in any one of claims 1 to 9; the gas spraying plate has an air outlet channel penetrating the upper and lower surfaces, and the air outlet channel communicates the air distribution cavity with the reaction chamber; A base arranged opposite to the intake assembly, located at the lower part of the reaction chamber, and used for carrying a substrate.

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