Semiconductor processing equipment
By setting up multiple reaction units and maintenance ports inside the reaction chamber, equipped with a sealing plate and cleaning observation window, the problem of low maintenance efficiency in the prior art is solved, and efficient cleaning and uniform process processing effects are achieved.
Patent Information
- Application Number
- CN202421972974.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-14
- Publication Date
- 2025-07-08
- Estimated Expiration
- 2034-08-14
AI Technical Summary
The maintenance method of the existing reaction chamber requires opening the cavity, which leads to high maintenance costs and low efficiency, making it difficult to clean the interior of the reaction chamber and its components without opening the cavity.
A semiconductor processing device is designed. The inner space of the reaction chamber is divided into multiple reaction units. The side wall is equipped with a maintenance port and the reaction unit is connected to the reaction unit. The opening and closing of the maintenance port is controlled through a sealing plate. It is equipped with a cleaning observation window for easy observation and cleaning. The base can be lifted and lowered to avoid interference with the process processing.
It realizes efficient cleaning of the interior of the reaction chamber and its components without opening the cavity, improves maintenance efficiency, and ensures uniformity of the process processing results of the substrate.
Smart Images
Figure CN223079079U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductor manufacturing, in particular to a semiconductor processing device. Background Art
[0002] During the semiconductor manufacturing process, the reaction chamber usually needs to be cleaned regularly to keep a high cleanliness inside the reaction chamber, so as to ensure the performance and yield of semiconductor devices.
[0003] Based on the structure of the existing reaction chamber, an opening operation needs to be performed first to clean the inside of the reaction chamber. However, due to the large number of devices connected to the reaction chamber (including radio frequency power supply, gas source, air pump, controller, etc.), there are problems of high difficulty and long time consumption when opening the reaction chamber, resulting in high maintenance cost of the reaction chamber and low preparation efficiency of devices. Therefore, it is necessary to adjust the maintenance method of the reaction chamber. Summary of the Utility Model
[0004] The purpose of the utility model is to provide a semiconductor processing device, which can clean the inside of the reaction chamber and the components installed therein without opening the chamber, so as to improve the maintenance efficiency of the reaction chamber and the uniformity of the process treatment results of the substrate.
[0005] In order to achieve the above purpose, the utility model is realized by the following technical solutions:
[0006] A semiconductor processing device includes:
[0007] A reaction chamber, which includes a cavity and a chamber cover arranged on the top of the cavity; the internal space of the reaction chamber is divided into multiple reaction units;
[0008] A base, arranged in each of the reaction units, for carrying a substrate;
[0009] A maintenance port, arranged on the side wall of the cavity and penetrating the inner surface and the outer surface of the side wall of the cavity; and the actions of cleaning the reaction unit and the base are performed through the maintenance port;
[0010] A sealing plate, located outside the maintenance port and fixedly connected to the side wall of the cavity, for opening or closing the maintenance port.
[0011] Optionally, the multiple reaction units communicate with each other, and the number of the maintenance ports is at least one.
[0012] Optionally, adjacent two reaction units are isolated by an inner cavity wall arranged on the chamber cover and the cavity, and the maintenance ports are arranged in one-to-one correspondence with the reaction units.
[0013] Optionally, a wafer transfer port is further provided on the side wall of the cavity, so that the substrate can enter and exit the reaction unit through the wafer transfer port; and the maintenance port and the wafer transfer port are located on different sides.
[0014] Optionally, the pedestal is lifted and lowered between a high position and a low position, and the high position is above the horizontal plane where the top end of the maintenance port is located, and the low position is below the horizontal plane where the top end of the maintenance port is located.
[0015] Optionally, the longitudinal section of the maintenance port is rectangular.
[0016] Optionally, the sealing plate is detachably connected to the side wall of the cavity through fasteners.
[0017] Optionally, a sealing ring is provided between the sealing plate and the side wall of the cavity.
[0018] Optionally, a cleaning observation window is provided on the sealing plate.
[0019] Optionally, the cleaning observation window is made of quartz.
[0020] Optionally, a process observation window is provided on the cavity cover.
[0021] Optionally, a spectral signal detection device is provided on the process observation window.
[0022] One of the advantages of the present utility model is as follows:
[0023] A semiconductor processing device provided by the present utility model, the reaction chamber includes a cavity and a cavity cover provided on the top of the cavity, and the internal space of the reaction chamber is divided into multiple reaction units. A maintenance port is provided on the side wall of the cavity, and the maintenance port penetrates through the inner surface and the outer surface of the side wall of the cavity and communicates with the reaction unit, so as to clean the inside of the reaction unit and the components installed therein through the maintenance port, thereby cleaning the inside of the reaction chamber and the components installed therein without opening the cavity, and further greatly improving the maintenance efficiency of the reaction chamber.
[0024] In the present utility model, a sealing plate is provided outside the reaction chamber to control the opening or closing of the maintenance port; a cleaning observation window is provided on the sealing plate to facilitate observing the contamination condition of the inside of the reaction unit or the components installed therein, so that the inside of the reaction unit or the components installed therein can be cleaned in time, and further ensuring the uniformity of the process treatment result of the substrate.
[0025] In the present utility model, a wafer transfer port is further provided on the side wall of the cavity, so that the substrate can enter and exit the reaction unit through the wafer transfer port; and the maintenance port and the wafer transfer port are located on different sides to avoid interference of the setting of the maintenance port with the path of the substrate entering and exiting the reaction unit.
[0026] In the present utility model, the base in the reaction unit can be lifted between a high position and a low position, and the high position is above the horizontal plane where the top of the maintenance opening is located, and the low position is below the horizontal plane where the top of the maintenance opening is located, so as to avoid the adverse impact of the setting of the maintenance opening on the process treatment of the substrate, and further ensure the uniformity of the process treatment result of the substrate. Description of the Drawings
[0027] Figure 1 FIG. is a schematic structural view of a base in a semiconductor processing apparatus according to an embodiment of the present utility model when it is in the low position;
[0028] Figure 2 FIG. is a schematic structural view of a base in a semiconductor processing apparatus according to an embodiment of the present utility model when it is in the high position;
[0029] Figure 3 FIG. is a perspective view of a cavity cover in a semiconductor processing apparatus according to an embodiment of the present utility model;
[0030] Figure 4 FIG. is a perspective view of a cavity in a semiconductor processing apparatus according to an embodiment of the present utility model;
[0031] Figure 5 FIG. is a bottom view of a cavity in a semiconductor processing apparatus according to an embodiment of the present utility model;
[0032] Figure 6 is Figure 5 a schematic cross-sectional view taken along the line A-A in;
[0033] Figure 7 is Figure 5 a schematic cross-sectional view taken along the line B-B in;
[0034] Figure 8 FIG. is a schematic structural view of a sealing plate and a cleaning observation window in a semiconductor processing apparatus according to an embodiment of the present utility model. Detailed Embodiments
[0035] The following further describes in detail a semiconductor processing device proposed by the present utility model in conjunction with the accompanying drawings and specific embodiments. According to the following description, the advantages and features of the present utility model will be clearer. It should be noted that the accompanying drawings are in a very simplified form and use non-precise scales, only for conveniently and clearly assisting in explaining the purpose of the embodiments of the present utility model. In order to make the purpose, features, and advantages of the present utility model more obvious and understandable, please refer to the accompanying drawings. It should be noted that the structures, scales, sizes, etc. shown in the drawings of this specification are only used to cooperate with the content disclosed in the specification for those skilled in this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the present utility model. Therefore, they do not have any technical substance. Any modification of the structure, change in the proportional relationship, or adjustment of the size, without affecting the effects that the present utility model can produce and the purpose that can be achieved, should still fall within the scope covered by the technical content disclosed by the present utility model.
[0036] It should be noted that in this text, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprising", "including", or any other variation thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device including a series of elements not only includes those elements but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article, or device. Without further limitation, an element defined by the statement "including a..." does not exclude the existence of another identical element in the process, method, article, or device including the said element.
[0037] Combined with the attached Figures 1-8 As shown, this embodiment provides a semiconductor processing device, including: a reaction chamber 110, a pedestal 120, a maintenance port 130, and a sealing plate 140 (as Figure 8 shown). The reaction chamber 110 includes a cavity 112 and a chamber cover 111 provided on the top of the cavity 112; the internal space of the reaction chamber 110 is divided into multiple reaction units 113. The pedestal 120 is disposed in each of the reaction units 113 for carrying a substrate 100 (as Figure 2 shown). The maintenance port 130 is provided on the side wall of the cavity 112; and the maintenance port 130 penetrates the inner and outer surfaces of the side wall of the cavity 112 and communicates with the reaction unit 113 to perform actions of cleaning the reaction unit 113 and the pedestal 120 through the maintenance port 130. The sealing plate 140 is located outside the reaction chamber 110, disposed outside the maintenance port 130 and fixedly connected to the side wall of the cavity 112, and is used to open or close the maintenance port 130.
[0038] Specifically, the side wall of the cavity cover 111 extends downward to enclose a first internal space, the side wall of the cavity body 112 extends upward to form a second internal space, and the cavity cover 111 is detachably and fixedly connected to the cavity body 112. More specifically, when the cavity cover 111 is installed on the cavity body 112, the first internal space and the second internal space communicate with each other and jointly form the internal space of the reaction chamber 110. At this time, processes such as etching or deposition can be performed on the substrate 100 in the reaction chamber 110. When the cavity cover 111 and the cavity body 112 are separated, the opening of the reaction chamber 110 can be realized. At this time, required components (such as a pedestal, a shower head, etc.) can be installed inside the cavity cover 111 and the cavity body 112, or the above required components can be maintained, or the interiors of the cavity cover 111 and the cavity body 112 can be cleaned, etc.
[0039] In one embodiment, the internal space of the reaction chamber 110 can be divided into a plurality of reaction units 113, and each reaction unit 113 is provided with a pedestal 120 for carrying the substrate 100 and a shower head 160 disposed opposite to the pedestal 120. The shower head 160 is used to introduce reaction gas into the corresponding reaction unit 113. In addition, the shower head 160 can also serve as an upper electrode, and the pedestal 120 can also serve as a lower electrode. At least one radio frequency power supply is applied to the upper electrode or the lower electrode to ionize the reaction gas between the upper electrode and the lower electrode into plasma, so as to perform a process on the substrate 100 in the reaction unit 113. Further, dividing the internal space of the reaction chamber 110 into a plurality of reaction units 113 can simultaneously perform processes on a plurality of substrates 100 in the reaction chamber 110, thereby effectively improving the processing efficiency of the substrate 100, but the present invention is not limited thereto.
[0040] Specifically, a wafer transfer port 151 is provided on the side wall of the cavity body 112 to enable the substrate 100 to enter and exit the reaction unit 113 through the wafer transfer port 151. Optionally, two adjacent reaction units 113 can share one wafer transfer port 151, but the present invention is not limited thereto.
[0041] More specifically, a maintenance port 130 communicating with the reaction unit 113 is further provided on the side wall of the cavity body 112 to clean the interior of the reaction unit 113 and the components installed inside the reaction unit 113 through the maintenance port 130, so as to clean the interior of the reaction chamber 110 and the components installed therein without opening the chamber, thereby greatly improving the maintenance efficiency of the reaction chamber 110. Optionally, as Figure 4As shown, the maintenance port 130 and the wafer transfer port 151 are located on different sides to prevent the setting of the maintenance port 130 from interfering with the path of the substrate 100 entering and exiting the reaction unit 113. Optionally, the longitudinal section of the maintenance port 130 is rectangular so that a relatively large space inside the reaction unit 113 can be cleaned through the maintenance port 130, but the present invention is not limited thereto.
[0042] Specifically, the pedestal 120 inside each reaction unit 113 can be lifted and lowered between a high position and a low position; wherein, the low position is below the wafer transfer port 151, as Figure 1 shown, when the pedestal 120 is at the low position, it can pass through the wafer transfer port 151 to place the substrate 100 on the pedestal 120 or take out the substrate 100 from the pedestal 120. The high position is above the wafer transfer port 151, as Figure 2 shown, when the pedestal 120 is at the high position, the substrate 100 carried thereon is in a process position and away from the wafer transfer port 151 to prevent the wafer transfer port 151 from having an adverse effect on the process treatment of the substrate 100, thereby ensuring the uniformity of the process treatment result of the substrate 100. Optionally, the high position is also above the horizontal plane where the top end of the maintenance port 130 is located, and the low position is also below the horizontal plane where the top end of the maintenance port 130 is located, so that the maintenance port 130 is away from the process position, thereby preventing the setting of the maintenance port 130 from having an adverse effect on the process treatment of the substrate 100 and further ensuring the uniformity of the process treatment result of the substrate 100, but the present invention is not limited thereto.
[0043] Please continue to refer to Figure 1 and Figure 2 , adjacent two reaction units 113 are isolated by the inner cavity wall 114 provided on the cavity cover 111 and the cavity body 112; wherein, the setting of the inner cavity wall 114 can prevent the cross-talk of reaction gases and radio frequency energy between adjacent reaction units 113, which is beneficial to both the uniform distribution of the plasma concentration and the improvement of the uniformity when applying modulated radio frequency.
[0044] Specifically, an inner wafer transfer port 154 is provided on the inner cavity wall 114, and the wafer 100 is transferred between two adjacent reaction units 113 through the inner wafer transfer port 154, so that the wafer 100 is transferred onto the susceptor 120 in any one of the reaction units 113 through the cooperation of the wafer transfer port 151 and the inner wafer transfer port 154. More specifically, in this case, the number of the maintenance ports 130 is the same as the number of the reaction units 113, and the maintenance ports 130 and the reaction units 113 are arranged in one-to-one correspondence. The one-to-one correspondence here means that one maintenance port 130 is directly communicated with one reaction unit 113, so as to facilitate cleaning the interior of the corresponding reaction unit 113 and the components installed therein through each maintenance port 130.
[0045] In other embodiments, a plurality of the reaction units 113 are interconnected. In this case, the number of the maintenance ports 130 is at least one, as long as the interiors of the plurality of reaction units 113 and the components installed therein can be cleaned through the maintenance ports 130. Preferably, the number of the maintenance ports 130 is the same as the number of the reaction units 113, and the maintenance ports 130 and the reaction units 113 are arranged in one-to-one correspondence, but the present invention is not limited thereto.
[0046] Please refer to Figure 8 , in one embodiment, the sealing plate 140 is detachably connected to the side wall of the cavity 112 through fasteners 142, so as to facilitate opening or closing the maintenance port 130. Optionally, a sealing ring is provided between the sealing plate 140 and the side wall of the cavity 112 to ensure the airtightness of the reaction chamber 110, thereby ensuring the vacuum environment in the reaction chamber 110. Optionally, the material of the sealing ring is FFKM (perfluoroether rubber) resistant to plasma corrosion, but the present invention is not limited thereto.
[0047] In other embodiments, the sealing plate 140 can also adopt a push-pull structure, an opening-closing structure or a rotary structure, which is not limited herein, as long as the opening or closing of the maintenance port 130 can be controlled through the sealing plate 140.
[0048] Please continue to refer to Figure 8 , a cleaning observation window 141 is provided on the sealing plate 140, so as to facilitate observing the contamination condition of the interior of the reaction unit 113 or the components installed therein, so that the interior of the reaction unit 113 or the components installed therein can be cleaned in time, and further ensure the uniformity of the process treatment result of the wafer 100. Optionally, the cleaning observation window 141 is made of quartz, but the present invention is not limited thereto.
[0049] Please refer toFigure 3 , a process observation window 1111 is provided on the cavity cover 111. The number of the process observation windows 1111 is the same as that of the reaction units 113, and the process observation windows 1111 are arranged in one-to-one correspondence with the reaction units 113, so as to facilitate observing the process treatment condition of the substrate 100 in the corresponding reaction unit 113 through the process observation windows 1111. Optionally, a spectral signal detection device is provided on the process observation window 141 to monitor the process treatment condition of the substrate 100. Optionally, the process observation window 1111 is made of quartz, but the present invention is not limited thereto.
[0050] In addition, in some embodiments, metal gaskets are provided between the cavity cover 111 and the cavity 112 and between the inner cavity wall 114 of the cavity cover 111 and the inner cavity wall 114 of the cavity 112 to enhance the electrical connection performance between the cavity cover 111 and the cavity 112 and prevent the leakage of radio frequency at the same time. Further, seals are also provided between the cavity cover 111 and the cavity 112 and between the inner cavity wall 114 of the cavity cover 111 and the inner cavity wall 114 of the cavity 112 and located radially inside the metal gaskets to ensure the tightness of the reaction chamber 110 and the tightness of each reaction unit 113; optionally, the material of the seal is FFKM (perfluoroether rubber) resistant to plasma corrosion, but the present invention is not limited thereto.
[0051] As Figure 1 and Figure 2 shown, the semiconductor processing equipment further includes a vacuum plate valve 152; the vacuum plate valve 152 is located outside the reaction chamber 100, is arranged outside the wafer transfer port 151 and is fixedly connected to the side wall of the cavity 112; the vacuum plate valve 152 is used to control the opening or closing of the wafer transfer port 151. Further, a gas channel 153 communicating with the wafer transfer port 151 is further provided on the side wall of the cavity 112, and the gas channel 153 is communicated with a purge gas source through a purge gas inlet 155 to introduce purge gas into the gas channel 153. After the purge gas is introduced into the gas channel 153, an air curtain can be formed to prevent the pollutants generated during the process treatment from depositing inside the vacuum plate valve 152, so as to avoid the pollutants falling off and affecting the process treatment result of the substrate 100 when the vacuum plate valve 152 switches to open or close the wafer transfer port 151, but the present invention is not limited thereto.
[0052] In summary, the present embodiment provides a semiconductor processing apparatus. The reaction chamber includes a chamber body and a chamber cover disposed on the top of the chamber body, and the internal space of the reaction chamber is divided into multiple reaction units. A maintenance port is provided on the side wall of the chamber body. The maintenance port penetrates through the inner surface and the outer surface of the side wall of the chamber body and communicates with the reaction unit, so as to clean the interior of the reaction unit and the components installed therein through the maintenance port, thereby cleaning the interior of the reaction chamber and the components installed therein without opening the chamber, and thus greatly improving the maintenance efficiency of the reaction chamber. In the present embodiment, a sealing plate is provided outside the reaction chamber to control the opening or closing of the maintenance port; and a cleaning observation window is provided on the sealing plate to facilitate observing the contamination condition of the interior of the reaction unit or the components installed therein, so that the interior of the reaction unit or the components installed therein can be cleaned in a timely manner, and thus the uniformity of the process treatment result of the substrate is ensured. A wafer transfer port is also provided on the side wall of the chamber body to enable the wafer to enter and exit the reaction unit through the wafer transfer port; and the maintenance port and the wafer transfer port are located on different sides to avoid interference of the setting of the maintenance port with the path of the wafer entering and exiting the reaction unit. The susceptor in the reaction unit can be lifted between a high position and a low position, and the high position is above the horizontal plane where the top end of the maintenance port is located, and the low position is below the horizontal plane where the top end of the maintenance port is located, so as to avoid the adverse effect of the setting of the maintenance port on the process treatment of the wafer and further ensure the uniformity of the process treatment result of the wafer.
[0053] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as a limitation of the present invention. After those skilled in the art have read the above content, various modifications and substitutions of the present invention will be obvious. Therefore, the protection scope of the present invention should be defined by the appended claims.
Claims
1. A semiconductor processing device, characterized in that, Comprising: A reaction chamber, which includes a cavity and a chamber cover disposed on the top of the cavity; the internal space of the reaction chamber is divided into multiple reaction units; A susceptor, disposed in each of the reaction units for carrying a substrate; A maintenance port, disposed on the side wall of the cavity and penetrating the inner surface and the outer surface of the side wall of the cavity; and the actions of cleaning the reaction unit and the susceptor are performed through the maintenance port; A sealing plate, located outside the maintenance port and fixedly connected to the side wall of the cavity, for opening or closing the maintenance port.
2. The semiconductor processing apparatus according to claim 1, wherein, The multiple reaction units communicate with each other, and the number of the maintenance ports is at least one.
3. The semiconductor processing apparatus according to claim 1, wherein Adjacent two of the reaction units are isolated by an inner cavity wall provided on the chamber cover and the cavity, and the maintenance ports are arranged in one-to-one correspondence with the reaction units.
4. The semiconductor processing equipment according to claim 2 or 3, characterized in that, A wafer transfer port is further provided on the side wall of the cavity, so that the substrate enters and exits the reaction unit through the wafer transfer port; and the maintenance port and the wafer transfer port are located on different sides.
5. The semiconductor processing apparatus according to claim 1, wherein, The susceptor moves up and down between a high position and a low position, and the high position is above the horizontal plane where the top end of the maintenance port is located, and the low position is below the horizontal plane where the top end of the maintenance port is located.
6. The semiconductor processing apparatus according to claim 1, wherein, The longitudinal section of the maintenance port is rectangular.
7. The semiconductor processing equipment according to claim 1, wherein the sealing plate is detachably connected to the side wall of the cavity through a fastener.
8. The semiconductor processing equipment according to claim 7, wherein, A sealing ring is provided between the sealing plate and the side wall of the cavity.
9. The semiconductor processing apparatus according to claim 1, wherein A cleaning observation window is provided on the sealing plate.
10. The semiconductor processing equipment according to claim 9, wherein, The cleaning observation window is made of quartz.
11. The semiconductor processing apparatus according to claim 1, wherein, A process observation window is provided on the chamber cover.
12. The semiconductor processing equipment according to claim 11, characterized in that, A spectral signal detection device is provided on the process observation window.