7results about "Screening rooms/chambers" patented technology

An exemplary semiconductor processing chamber can include a chamber body. The chamber can include a substrate support assembly disposed within the chamber body. The chamber can include a substrate support assembly having a support plate seated atop a support column. The chamber can include a radio frequency (RF) shield seated atop the chamber body and extending around a peripheral edge of the support plate. The RF shield can include a lower annular member. The RF shield can include an upper annular member seated atop the lower annular member. The upper annular member can define a lip projecting radially outward from an outer surface of the upper annular member. Each of the lower annular member and the upper annular member can include a dielectric material.

The present application relates to a kind of anti-fragment penetration assembled electronic signal shielding room, construction method, the shielding room includes: multiple wallboard modules, each is sequentially fixedly connected with ceramic composite impact layer, ribbed steel plate bearing layer, honeycomb buffer layer and first electromagnetic shielding layer from outside to inside, multiple wallboard modules head-to-tail butt joint;Top plate module is at least provided with second electromagnetic shielding layer, and top plate module is adaptively butted with the top of multiple wallboard modules;Bottom plate module is at least provided with third electromagnetic shielding layer, and bottom plate module is adaptively butted with the bottom of multiple wallboard modules;Hydraulic locking mechanism is arranged at the butt joint of adjacent wallboard module, wallboard module and top plate module and wallboard module and bottom plate module;Multiple wallboard modules and top plate module and bottom plate module cooperatively form closed shielding room.The present application realizes the coordination of anti-fragment penetration protection, electromagnetic shielding integrity and quick assembly construction, improves the structural reliability and shielding stability in high-risk environment.

The invention relates to a method for manufacturing a container configured to attenuate disturbances of incoming and outgoing electromagnetic fields, comprising: - removing the wooden floor (2) from an existing ISO shipping container (1); - stripping locations of the container for welds; - welding a metal floor (9) into place using a continuous welding process; - welding an internal metal partition (11) into place around its periphery, using a continuous welding process, thus forming an internal attenuation part (12); - making at least one first cutout (13) in a wall of the container so as to receive a door assembly (14); - making at least one second cutout (15) in the internal metal partition so as to receive a first frame (16) for a communication interface (17); - making at least one third cutout (18) in a wall of the container so as to receive a second frame (19) for a communication interface (20); - fitting the at least one door assembly; - fitting at least one first frame in the second cutout; - fitting at least one second frame in the third cutout.

Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a substrate support assembly disposed within the chamber body. The chambers may include a substrate support assembly having a support plate seated atop a support stem. The chambers may include a radio frequency (RF) shield seated atop the chamber body and extending about a peripheral edge of the support plate. The RF shield may include a lower annular member. The RF shield may include an upper annular member seated atop the lower annular member. The upper annular member may define a lip that protrudes radially outward from an outer surface of the upper annular member. Each of the lower annular member and the upper annular member may include a dielectric material.

IR window slabs of GaP greater than 4 inches diameter, and of GaAs greater than 8 inches diameter, are grown on a substrate using Hydride Vapor Phase Epitaxy (HVPE), preferably low pressure HVPE (LP-HVPE). Growth rates can be hundreds of microns per hour, comparable to vertical melt growth. GaAs IR windows produced by the disclosed method exhibit lower absorption than crystals grown from vertical melt near 1 micron, due to reduced impurities and reduced growth temperatures that limit the solubility of excess arsenic, and thereby reduce the “EL2” defects that cause high absorption near one micron in conventional GaAs boules. Silicon wafers can be used as HVPE substrates. For GaAs, layers of GaAsP that vary from 0% to 100% As can be applied to the substrate. EMI shielding can be applied by adding a dopant during the final stage of growth to provide a conductive GaAs or GaP layer.

Method of manufacturing a container configured to mitigate incoming and outgoing electromagnetic field disturbances, comprising: - removing the wooden floor (2) from a starting ISO shipping container (1); - stripping areas of the container for welding; - continuously welding a metal floor (9); - continuously welding around its perimeter an internal metal partition (11) forming an internal attenuation part (12); - making at least one first cut (13) in a wall of the container to receive a door assembly (14); - making at least one second cut (15) in the internal metal partition to receive a first frame (16) for a communication interface (17);- make at least one third cut (18) in a wall of the container to receive a second frame (19) for a communication interface (20); - install at least one door assembly; - install at least one first frame in the second cut; - install at least one second frame in the third cut. Figure for the abbreviation: [Fig.11];

A shelter and the construction method of the same is here describes. In particular, a tactical shelter capable of meeting the strictest civil and military standards is here described. Electronic and computer components and related workstations for a human operator can be installed in said shelter.