Parallel power switch module
Through the combination of high-performance and low-saturation voltage drop field effect tubes in the parallel power switch module, the parallel power switch module is independently controlled, which solves the problem of insufficient efficiency and adaptability of the main switching devices in the series integration of lithium batteries, and achieves more efficient power conversion and cost reduction.
Patent Information
- Application Number
- CN202422020781.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-20
- Publication Date
- 2025-07-08
- Estimated Expiration
- 2034-08-20
AI Technical Summary
In the existing lithium battery series integration system, the main switching devices of non-isolated bidirectional DCDC sources are difficult to improve efficiency and adaptability in the hard switching state, resulting in high energy costs and insufficient control flexibility.
The parallel power switch module is adopted, and the field effect tube combination with high performance and low saturation voltage drop is independently controlled by the controller after parallel connection, which realizes hysteresis start-up, which undertakes the opening and guidance process respectively to reduce losses.
Improves power conversion efficiency, reduces energy costs, enhances the adaptability of power components, and adapts to different current waveforms.
Smart Images
Figure CN223079939U_ABST
Abstract
Description
Technical Field
[0001] The utility model is applied to the technical field of power device control, and particularly relates to a parallel power switch module. Background Art
[0002] The main switch devices of switch-mode power regulators have evolved from semi-controlled to fully-controlled, and from current controllability to voltage controllability. The convenience and conversion efficiency of use are getting higher and higher, and the main materials of switches have evolved from silicon, germanium to silicon carbide and gallium nitride. The main representative devices of these devices include thyristors (SCR), bipolar junction transistors, power field effect transistors (MOSFET), insulated gate bipolar transistors (IGBT), and silicon carbide field effect transistors (SIC-MOSFET). These switch devices are all being upgraded with the development of technology, and their performance and indicators are constantly improving. However, some inherent characteristics caused by original materials and processes will not change, and each type of device also has its own relative advantages and disadvantages. With the development of technology, the system-level requirements for the efficiency index of lithium battery formation and grading equipment are increasing, and the requirements for control flexibility are also increasing. The main switch device of the non-isolated bidirectional DCDC source required in the existing lithium battery series formation system uses the above-mentioned single type of power device as the main switch device. This switch usually operates in a hard-switching state, and it is difficult to improve the efficiency without improving the indicators and control characteristics of the device itself.
[0003] If it is possible to provide a parallel power switch module with higher efficiency and stronger adaptability to solve the problems of insufficient power conversion efficiency, energy cost, and adaptation effect of the existing switch module. Summary of the Utility Model
[0004] The technical problem to be solved by the utility model is to overcome the deficiencies of the prior art, and provide a parallel power switch module with higher efficiency and stronger adaptability, thereby improving the power conversion efficiency, reducing the energy cost of the bidirectional DCDC power supply in series formation, and improving the adaptability of power components.
[0005] The technical solution adopted by the utility model is as follows: The utility model includes a power supply, a controller, a first switch group, and a second switch group. Both the first switch group and the second switch group include a first power field effect transistor, a second power field effect transistor, and a diode connected in parallel. The positive terminal of the power supply is connected to the positive output port through the first switch group. The negative terminal of the power supply is connected to the output terminal of the first switch group through the second switch group. The negative terminal of the power supply is also connected to the negative output terminal. The control terminals of all the first power field effect transistors and all the second power field effect transistors are connected to the controller.
[0006] As can be seen from the above solution, the first power field-effect transistor and the second power field-effect transistor are directly connected in parallel at the power pole, and each field-effect transistor device is independently controlled by the controller, so as to realize the control of the field-effect transistors in each switch group. The second power field-effect transistor in the same group is used for hysteresis starting, so as to realize that the high-performance first power field-effect transistor undertakes the turn-on process, and the second power field-effect transistor with low saturation voltage drop undertakes the main conduction process, thereby reducing power consumption, reducing the energy cost of the bidirectional DCDC power supply in series formation, and at the same time improving the conversion efficiency of the power supply. Improve the adaptability of the power component, and change the power control strategy. When passing through currents with different waveform coefficients, good results can be achieved without replacing the main power switch.
[0007] A preferred solution is that a first capacitor is also connected between the positive terminal and the negative terminal of the power supply, a second capacitor is also connected between the positive output terminal and the negative output terminal, and a coil is connected between the positive output terminal and the output terminal of the first switch group.
[0008] A preferred solution is that the first power field-effect transistor is a silicon carbide field-effect transistor, and the second power field-effect transistor is an insulated gate bipolar transistor.
[0009] A preferred solution is that the first power field-effect transistor is a power field-effect transistor.
[0010] A preferred solution is that the second power field-effect transistor is a thyristor. Description of the Drawings
[0011] Figure 1 is a three-dimensional structural schematic diagram of the present invention;
[0012] Figure 2 is a working flow chart of the present invention. Detailed Embodiments
[0013] Such as Figure 1As shown, in this embodiment, the utility model includes a power supply DC and a controller, and is characterized in that: it further includes a first switch group and a second switch group. Both the first switch group and the second switch group include a first power field effect transistor Q1\Q2 and a second power field effect transistor Q3\Q4 connected in parallel, as well as a diode. The positive terminal of the power supply DC is connected to the positive output port through the first switch group. The negative terminal of the power supply DC is connected to the output terminal of the first switch group through the second switch group. The negative terminal of the power supply DC is also connected to the negative output terminal. The control terminals of all the first power field effect transistors Q1\Q2 and all the second power field effect transistors Q3\Q4 are connected to the controller. The types of the first power field effect transistors Q1\Q2 and the second power field effect transistors Q3\Q4 are different. The controller is a common microprocessor or an upper computer. The first power field effect transistors Q1\Q2 are field effect transistors with high-performance switching performance, and the second power field effect transistors Q3\Q4 are field effect transistors with low saturation voltage drop.
[0014] In this embodiment, a first capacitor C1 is further connected between the positive terminal and the negative terminal of the power supply DC. A second capacitor C2 is further connected between the positive output terminal and the negative output terminal. A coil L1 is connected between the positive output terminal and the output terminal of the first switch group.
[0015] In this embodiment, the first power field effect transistors Q1\Q2 are silicon carbide field effect transistors or power field effect transistors, and the second power field effect transistors Q3\Q4 are insulated gate bipolar transistors or thyristors.
[0016] As Figure 2 shown, the working principle of the utility model:
[0017] By controlling through the controller, the first switch group is started. Specifically, the turn-on control signal of the second power field effect transistor Q3 lags behind the control signal of the first power field effect transistor Q1 by a lag time of T1. The parameter T1 is selected and determined according to the turn-on characteristics of the first power field effect transistor Q1. The turn-off signal of the first power field effect transistor Q1 lags behind the turn-off signal of the second power field effect transistor Q3 by a lag time of T2. The parameter T2 is selected and determined according to the turn-off characteristics of the second power field effect transistor Q3.
[0018] After the first switch group is turned off, the second switch group is started by controlling through the controller. Specifically, the turn-on control signal of the second power field effect transistor Q4 lags behind the control signal of the first power field effect transistor Q2, and the lag time is T3. The parameter of T3 is selected and determined according to the turn-on characteristic of the first power field effect transistor Q2; the turn-off signal of the first power field effect transistor Q2 lags behind the turn-off signal of the second power field effect transistor Q4, and the lag time is T4. The parameter of T4 is selected and determined according to the turn-off characteristic of the second power field effect transistor Q4.
[0019] Through the parallel connection of the above-mentioned power transistors and the corresponding startup sequence, it can be realized that the first power field effect transistors Q1 and Q2 with high-performance switching performance undertake the turn-on process, and the second power field effect transistors Q3 and Q4 with low saturation voltage drop undertake the main conduction process. Each works in the stage it is good at, reducing the loss and improving the efficiency.
[0020] Although the embodiments of the present invention are described with actual solutions, they do not constitute a limitation to the meaning of the present invention. For those skilled in the art, the modification of its implementation solutions according to this specification and the combination with other solutions are obvious.
Claims
1. A parallel power switch module, which includes a power supply DC and a controller, is characterized in that: It also includes a first switch group and a second switch group. Both the first switch group and the second switch group include a first power field effect transistor Q1\Q2 and a second power field effect transistor Q3\Q4 connected in parallel, as well as diodes. The positive terminal of the power supply DC is connected to the positive output port through the first switch group. The negative terminal of the power supply DC is connected to the output terminal of the first switch group through the second switch group. The negative terminal of the power supply DC is also connected to the negative output terminal. The control terminals of all the first power field effect transistors Q1\Q2 and all the second power field effect transistors Q3\Q4 are connected to the controller.
2. The parallel power switch module according to claim 1, wherein: A first capacitor C1 is also connected between the positive terminal and the negative terminal of the power supply DC. A second capacitor C2 is also connected between the positive output terminal and the negative output terminal. A coil L1 is connected between the positive output terminal and the output terminal of the first switch group.
3. The parallel power switch module according to claim 1, characterized in that: The first power field effect transistors Q1\Q2 are silicon carbide field effect transistors, and the second power field effect transistors Q3\Q4 are insulated gate bipolar transistors.
4. A parallel power supply switch module according to claim 1, characterized in that: The first power field effect transistors Q1\Q2 are power field effect transistors.
5. A parallel power switch module according to claim 1, characterized in that: The second power field effect transistors Q3\Q4 are thyristors.