ALD spraying system and ALD equipment

Abstract

The utility model discloses an ALD (atomic layer deposition) spraying system and ALD equipment, and relates to the technical field of coating. The ALD spraying system comprises a spraying part and a pipeline system, the spraying part comprises a spraying bottom plate and a spraying panel, the spraying bottom plate is provided with a first air inlet cavity, a second air inlet cavity and a third air inlet cavity, and the spraying panel is provided with a first spraying area covering the first air inlet cavity, a second spraying area covering the second air inlet cavity and a third spraying area covering the third air inlet cavity. The second spraying area is divided into the first spraying area and the third spraying area; the pipeline system is provided with an oxygen source pipeline selectively communicating with the first air inlet cavity, an isolation air pipeline selectively communicating with the second air inlet cavity, a metal source pipeline selectively communicating with the third air inlet cavity, and a middle flow dividing pipeline selectively communicating the oxygen source pipeline, the isolation air pipeline and the metal source pipeline. The ALD spraying system provided by the utility model not only can meet the spraying requirement of time type deposition, but also can meet the spraying requirement of space type deposition.

Description

Technical Field

[0001] The utility model relates to the technical field of coating technology, and particularly to an ALD spraying system and an ALD device. Background Art

[0002] At present, the ALD devices on the market are divided into two types: time-based and space-based. The time-based ALD device has the advantages of good film-forming uniformity and high quality, but the production efficiency is low. The space-based ALD device has high production efficiency, but the film-forming quality is not ideal.

[0003] The spraying system configured for the same ALD device can only achieve space-based spraying or time-based spraying. Therefore, there is no ALD device that simultaneously has the two functions of time-based deposition and space-based deposition. Usually, the substrate can only complete the deposition of all film layers in a device with a specific deposition type. The film-forming quality and production efficiency cannot be taken into account at the same time. When different types of thin films need to be deposited on the same substrate to form different film layers, it is only possible to switch back and forth between two different types of ALD devices. During the switching process, the substrate is easily contaminated, the transportation cost is increased, and the production efficiency is also reduced. Summary of the Utility Model

[0004] The purpose of the utility model is to provide an ALD spraying system that can meet the spraying requirements of time-based deposition and space-based deposition.

[0005] Another purpose of the utility model is to provide an ALD device that has both the functions of time-based deposition and space-based deposition. When different film layers on the same substrate have different requirements for uniformity, it can deposit the film layer with high uniformity requirement by time-based deposition and deposit the film layer with low uniformity requirement by space-based deposition to improve the production efficiency.

[0006] An embodiment of the utility model provides a technical solution:

[0007] An ALD spraying system includes a spraying part and a pipeline system. The spraying part includes a spraying bottom plate and a spraying panel. The spraying bottom plate has a first air inlet cavity, a second air inlet cavity and a third air inlet cavity. The spraying panel has a first spraying area covering the first air inlet cavity, a second spraying area covering the second air inlet cavity and a third spraying area covering the third air inlet cavity. The second spraying area separates the first spraying area and the third spraying area. The pipeline system has an oxygen source pipeline selectively communicated with the first air inlet cavity, an isolation air pipeline selectively communicated with the second air inlet cavity, a metal source pipeline selectively communicated with the third air inlet cavity, and an intermediate shunt pipeline selectively communicating the oxygen source pipeline, the isolation air pipeline and the metal source pipeline.

[0008] In the ALD spraying system provided by the embodiment of the present utility model, in practical applications, when the spraying requirements for spatial deposition need to be met and different types of gas atmospheres are formed in different regions, the intermediate shunt pipeline remains disconnected. The oxygen source gas is transported to the first intake chamber through the oxygen source pipeline and sprayed out through the first spraying area to form an oxygen source gas atmosphere; the isolation gas is transported to the second intake chamber through the isolation gas pipeline and sprayed out through the second spraying area to form an isolation gas atmosphere; the metal source gas is transported to the third intake chamber through the metal source pipeline and sprayed out through the third spraying area to form a metal source gas atmosphere; the isolation gas atmosphere isolates the oxygen source gas atmosphere from the metal source gas atmosphere, and the substrate can complete spatial thin film deposition after passing through the oxygen source gas atmosphere, the isolation gas atmosphere, and the metal source gas atmosphere in sequence.

[0009] When the spraying requirements for temporal deposition need to be met, the intermediate shunt pipeline connects the oxygen source pipeline, the isolation gas pipeline, and the metal source pipeline. The ends of the oxygen source pipeline, the isolation gas pipeline, and the metal source pipeline away from the spraying member are sequentially opened and then closed, so as to sequentially introduce the oxygen source gas, the isolation gas, and the metal source gas into the ends of the oxygen source pipeline, the isolation gas pipeline, and the metal source pipeline connected to the spraying member, that is, into the first intake chamber, the second intake chamber, and the third intake chamber, so that the first spraying area, the second spraying area, and the third spraying area of the spraying panel all spray the oxygen source gas, the isolation gas, and the metal source gas in sequence, thereby realizing temporal thin film deposition.

[0010] Therefore, the ALD spraying system provided by the embodiment of the present utility model can both meet the spraying requirements for temporal deposition and the spraying requirements for spatial deposition.

[0011] The embodiment of the present utility model also provides a technical solution:

[0012] An ALD device includes a deposition chamber, a heater, and the aforementioned ALD spraying system. The ALD spraying system includes a spraying member and a pipeline system. The spraying member includes a spraying bottom plate and a spraying panel. The spraying bottom plate has a first intake chamber, a second intake chamber, and a third intake chamber. The spraying panel has a first spraying area covering the first intake chamber, a second spraying area covering the second intake chamber, and a third spraying area covering the third intake chamber. The second spraying area separates the first spraying area from the third spraying area; the pipeline system has an oxygen source pipeline selectively connected to the first intake chamber, an isolation gas pipeline selectively connected to the second intake chamber, a metal source pipeline selectively connected to the third intake chamber, and an intermediate shunt pipeline selectively connecting the oxygen source pipeline, the isolation gas pipeline, and the metal source pipeline. The heater and the spraying member are both disposed in the deposition chamber. The spraying panel is disposed opposite to the heater, and there is a deposition space for accommodating the substrate between the two.

[0013] Benefiting from the beneficial effects of the ALD spraying system, the ALD device provided by the embodiment of the present utility model has both time-type deposition and space-type deposition functions, and can deposit different film layers on the substrate in different deposition manners, so as to balance the film formation quality and production efficiency. Brief Description of the Drawings

[0014] In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present utility model, and therefore should not be regarded as limiting the scope. For those of ordinary skill in the art, other related drawings can also be obtained based on these drawings without creative efforts.

[0015] Figure 1 Structural schematic diagram of the ALD device provided by the embodiment of the present utility model;

[0016] Figure 2 is Figure 1 Structural schematic diagram of the spraying bottom plate of the ALD spraying system in the first perspective;

[0017] Figure 3 is Figure 1 Structural schematic diagram of the spraying panel of the ALD spraying system in ;

[0018] Figure 4 is Figure 1 Structural schematic diagram of the pipeline system of the ALD spraying system in ;

[0019] Figure 5 Structural schematic diagram of the spraying bottom plate in the second perspective;

[0020] Figure 6 A cross-sectional view of the connection structure of the spraying bottom plate, spraying panel, upper cover and oxygen source pipeline;

[0021] Figure 7 Structural schematic diagram of the pipeline system in another embodiment of the present utility model;

[0022] Icons: 100 - ALD spraying system; 110 - spraying bottom plate; 111 - first intake cavity; 112 - second intake cavity; 113 - third intake cavity; 114 - first intake hole; 115 - second intake hole; 116 - third intake hole; 117 - first intake depression; 118 - second intake depression; 119 - third intake depression; 120 - spraying panel; 121 - first spraying area; 122 - second spraying area; 123 - third spraying area; 125 - upper cover; 130 - pipeline system; 131 - oxygen source pipeline; 132 - isolation gas pipeline; 133 - metal source pipeline; 134 - intermediate shunt pipeline; 1341 - bypass pipe section; 1342 - branch pipe section; 1343 - shunt control valve; 1344 - first branch pipe; 1345 - second branch pipe; 1346 - bypass control valve; 135 - main road control valve; 136 - sectional control valve; 200 - ALD device; 210 - deposition chamber; 220 - heater; 230 - support; 240 - deposition space. Detailed implementation manners

[0023] To make the objectives, technical solutions and advantages of the embodiments of the present utility model clearer, the technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are some but not all of the embodiments of the present utility model. The components of the embodiments of the present utility model usually described and illustrated in the accompanying drawings here can be arranged and designed in various different configurations.

[0024] Therefore, the following detailed description of the embodiments of the present utility model provided in the accompanying drawings is not intended to limit the scope of the claimed present utility model, but merely represents selected embodiments of the present utility model. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present utility model without creative efforts fall within the scope of protection of the present utility model.

[0025] It should be noted that: similar reference numerals and letters denote similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0026] In the description of the present utility model, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "inner", "outer", "left", "right", etc. is based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship when the product of the present utility model is normally placed, or the orientation or positional relationship commonly understood by those skilled in the art. It is only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present utility model.

[0027] In addition, terms such as "first", "second", etc. are only used for distinguishing descriptions and cannot be construed as indicating or implying relative importance.

[0028] In the description of the present utility model, it should also be noted that unless otherwise clearly specified and defined, terms such as "arranged" and "connected" should be understood in a broad sense. For example, "connected" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances.

[0029] The following will describe in detail the specific implementation manners of the present utility model with reference to the accompanying drawings.

[0030] Embodiment

[0031] Please refer to Figure 1 , Figure 1 which shows a schematic structural diagram of the ALD device 200 provided in this embodiment.

[0032] The ALD device 200 provided in this embodiment includes a deposition chamber 210, an ALD spraying system 100, and a heater 220. The ALD spraying system 100 and the heater 220 are spaced apart in the deposition chamber 210. Specifically, the ALD spraying system 100 is above the heater 220. There is a deposition space 240 between the ALD spraying system 100 and the heater 220 for accommodating a substrate.

[0033] In practical applications, when the substrate is in the deposition space 240, the ALD spraying system 100 sprays different gases into the deposition space 240, thereby completing ALD deposition on the substrate. In fact, the ALD spraying system 100 provided in this embodiment has both a spatial deposition function and a temporal deposition function, and can perform spatial deposition or temporal deposition on the substrate in the deposition space 240.

[0034] Specifically, the ALD device 200 provided in this embodiment further includes a support member 230, and the support member 230 is in the deposition space 240. The support member 230 is used to support the substrate and drive the substrate to move in the deposition space 240, so that the substrate sequentially passes through various gas atmospheres formed by spraying of the ALD spraying system 100 during spatial deposition. During temporal deposition, in order to further improve the film formation uniformity and deposition efficiency, the support member 230 can also drive the substrate to move.

[0035] The ALD spray system 100 provided in this embodiment includes a spray member and a pipeline system 130. The spray member includes a spray bottom plate 110 and a spray panel 120. Please refer to Figure 2 and Figure 3 , Figure 2 As shown in the schematic structural diagram of the spray bottom plate 110 from the first perspective, Figure 3 As shown in the schematic structural diagram of the spray panel 120.

[0036] On one side surface of the spray bottom plate 110, a first air inlet cavity 111, a second air inlet cavity 112 and a third air inlet cavity 113 are respectively recessed. That is, the first air inlet cavity 111, the second air inlet cavity 112 and the third air inlet cavity 113 are all open cavities recessed inside the spray bottom plate 110, and any two of the first air inlet cavity 111, the second air inlet cavity 112 and the third air inlet cavity 113 are not communicated.

[0037] The spray panel 120 is covered on the spray bottom plate 110. The surface of the spray panel 120 has a first spray area 121, a second spray area 122 and a third spray area 123. The second spray area 122 separates the first spray area 121 and the third spray area 123. The first spray area 121 covers the opening of the first air inlet cavity 111, the second spray area 122 covers the opening of the second air inlet cavity 112, and the third spray area 123 covers the opening of the third air inlet cavity 113.

[0038] Actually, the spray panel 120 and the heater 220 are oppositely arranged on the upper and lower sides of the deposition space 240. The gas introduced into the first air inlet cavity 111 can be sprayed to the deposition space 240 through the first spray area 121 of the spray panel 120. The gas introduced into the second air inlet cavity 112 can be sprayed to the deposition space 240 through the second spray area 122. The gas introduced into the third air inlet cavity 113 can be sprayed to the deposition space 240 through the third spray area 123.

[0039] Since the second spray area 122 separates the first spray area 121 and the third spray area 123, the gas sprayed out from the first spray area 121 and the gas sprayed out from the third spray area 123 do not interfere with each other and are isolated by the gas sprayed out from the second spray area 122 between them.

[0040] In practical applications, by continuously introducing the oxygen source gas and the metal source gas into the first air inlet cavity 111 and the third air inlet cavity 113 respectively, and continuously introducing the isolation gas into the second air inlet cavity 112, an oxygen source gas atmosphere can be formed below the first spray area 121, an isolation gas atmosphere can be formed below the second spray area 122, and a metal source gas atmosphere can be formed below the third spray area 123. By driving the substrate to sequentially pass through the oxygen source gas atmosphere, the isolation gas atmosphere and the metal source gas atmosphere through the support member 230, a spatial ALD deposition can be completed on the surface of the substrate.

[0041] When the substrate is in the deposition space 240, if the oxygen source gas is first pulsed into the first intake chamber 111, the second intake chamber 112, and the third intake chamber 113 respectively, then the isolation gas is pulsed into the first intake chamber 111, the second intake chamber 112, and the third intake chamber 113 respectively, and finally the metal source gas is pulsed into the first intake chamber 111, the second intake chamber 112, and the third intake chamber 113 respectively, a time-based ALD deposition can be completed on the substrate surface.

[0042] Please refer to Figure 4 , Figure 4 which shows a schematic structural diagram of the pipeline system 130.

[0043] In this embodiment, the pipeline system 130 has an oxygen source pipeline 131, an isolation gas pipeline 132, a metal source pipeline 133, and an intermediate shunt pipeline 134. One end of the oxygen source pipeline 131 is connected to the first intake chamber 111, and the other end is used to introduce the oxygen source gas; one end of the isolation gas pipeline 132 is connected to the second intake chamber 112, and the other end is used to introduce the isolation gas; one end of the metal source pipeline 133 is connected to the third intake chamber 113, and the other end is used to introduce the metal source gas; the intermediate shunt pipeline 134 is respectively connected to the oxygen source pipeline 131, the isolation gas pipeline 132, and the metal source pipeline 133, and is used to selectively connect the oxygen source pipeline 131, the isolation gas pipeline 132, and the metal source pipeline 133.

[0044] It should be noted that if spatial deposition of the substrate is required, the intermediate shunt pipeline 134 remains disconnected. The oxygen source pipeline 131 of the pipeline system 130 directly continuously introduces the oxygen source gas introduced from the outside into the first intake chamber 111, so that the first spray area 121 of the spray panel 120 continuously sprays the oxygen source gas, thereby forming an oxygen source gas atmosphere in the area corresponding to the first spray area 121 in the deposition space 240; the isolation gas pipeline 132 directly continuously introduces the isolation gas introduced from the outside into the second intake chamber 112, so that the second spray area 122 of the spray panel 120 continuously sprays the isolation gas, thereby forming an isolation gas atmosphere in the area corresponding to the second spray area 122 in the deposition space 240; the metal source pipeline 133 directly continuously introduces the metal source gas introduced from the outside into the third intake chamber 113, so that the third spray area 123 of the spray panel 120 continuously sprays the metal source gas, thereby forming a metal source gas atmosphere in the area corresponding to the third spray area 123 in the deposition space 240.

[0045] Since the second spray zone 122 separates the first spray zone 121 and the third spray zone 123, that is, the isolation gas atmosphere field is between the oxygen source gas atmosphere field and the metal source gas atmosphere field, the isolation of the oxygen source gas atmosphere field and the metal source gas atmosphere field is achieved. In practical applications, an air extraction device can also be configured to extract the excess oxygen source gas, isolation gas, and metal source gas from the deposition chamber 210 to maintain the stability of the oxygen source gas atmosphere, isolation gas atmosphere, and metal source gas atmosphere.

[0046] The support member 230 drives the substrate to pass through the oxygen source gas atmosphere, isolation gas atmosphere, and metal source gas atmosphere in sequence. During the process of passing through the oxygen source gas atmosphere, the oxygen source gas is chemically adsorbed on the surface of the substrate; during the process of passing through the isolation gas atmosphere, the isolation gas purges the unadsorbed oxygen source gas and reaction by-products remaining on the surface of the substrate; during the process of passing through the metal source gas atmosphere, the metal source gas is chemically adsorbed on the surface of the substrate again, thereby completing one ALD process deposition to obtain a film layer.

[0047] Please continue to refer to Figure 2 and Figure 3 , in fact, in this embodiment, the spray panel 120 is circular, and the number of the second air inlet cavities 112 and the second spray zones 122 are both two, and the two second air inlet cavities 112 and the two second spray zones 122 correspond to each other one by one.

[0048] Moreover, the first spray zone 121, the third spray zone 123, and the two second spray zones 122 are respectively four fan-shaped regions constituting the spray panel 120. As a preference, in this embodiment, the first spray zone 121, the third spray zone 123, and the two second spray zones 122 are all fan-shaped regions with a central angle of 90°.

[0049] To effectively isolate the first spray zone 121 and the third spray zone 123, in this embodiment, in the same circumferential direction, the first spray zone 121, one of the two second spray zones 122, the third spray zone 123, and the remaining second spray zone 122 are arranged in sequence. In other words, in any circumferential direction of the spray panel 120, there is a second spray zone 122 between the first spray zone 121 and the third spray zone 123.

[0050] It can be understood that corresponding to the first spray zone 121, the third spray zone 123, and the two second spray zones 122, the oxygen source gas atmosphere, one isolation gas atmosphere, the metal source gas atmosphere, and the other isolation gas atmosphere are distributed in sequence in the circumferential direction. Therefore, in this embodiment, during the process of performing spatial deposition, the support member 230 rotates to drive the substrate to sequentially pass through the oxygen source gas atmosphere, one isolation gas atmosphere, the metal source gas atmosphere, and the other isolation gas atmosphere along the circumferential direction.

[0051] It should be noted that in other embodiments, the first spraying area 121, the second spraying area 122, and the third spraying area 123 may also be arranged in sequence in other directions. For example, the first spraying area 121, the second spraying area 122, and the third spraying area 123 are arranged in sequence in a straight line direction, and the oxygen source gas atmosphere, the isolation gas atmosphere, and the metal source gas atmosphere formed are arranged in sequence in the straight line direction. In this case, the support member 230 moves linearly, driving the substrate to sequentially pass through the oxygen source gas atmosphere, the isolation gas atmosphere, and the metal source gas atmosphere in the straight line direction.

[0052] If time-based deposition of the substrate is required, the oxygen source pipeline 131, the isolation gas pipeline 132, and the metal source pipeline 133 are connected through the intermediate shunt pipeline 134. The oxygen source gas, the isolation gas, and the metal source gas are sequentially introduced through the oxygen source pipeline 131, the isolation gas pipeline 132, and the metal source pipeline 133, so that the oxygen source gas, the isolation gas, and the metal source gas all flow into the first intake cavity 111, the second intake cavity 112, and the third intake cavity 113 in sequence, that is, the first spraying area 121, the second spraying area 122, and the third spraying area 123 of the spraying panel 120 all spray the oxygen source gas, the isolation gas, and the metal source gas in sequence. Similarly, in this embodiment, when spraying any one gas, both second spraying areas 122 will participate in spraying.

[0053] After the first spraying area 121, the second spraying area 122, and the third spraying area 123 spray the oxygen source gas simultaneously, the oxygen source gas is chemically adsorbed on the surface of the substrate; after the first spraying area 121, the second spraying area 122, and the third spraying area 123 spray the isolation gas simultaneously, the isolation gas sweeps away the residual oxygen source gas and reaction by-products in the deposition space 240; after the first spraying area 121, the second spraying area 122, and the third spraying area 123 spray the metal source gas simultaneously, the metal source gas is chemically adsorbed on the surface of the substrate again, thereby completing one ALD process deposition to obtain a film layer.

[0054] Regarding the connection between the spraying member and the pipeline system 130, in this embodiment, a first intake hole 114 penetrating the spraying bottom plate 110 is opened on the bottom wall of the first intake cavity 111, and one end of the first intake hole 114 far from the first intake cavity 111 is communicated with one end of the oxygen source pipeline 131; a second intake hole 115 penetrating the spraying bottom plate 110 is opened on the bottom wall of the second intake cavity 112, and one end of the second intake hole 115 far from the second intake cavity 112 is communicated with one end of the isolation gas pipeline 132; a third intake hole 116 penetrating the spraying bottom plate 110 is opened on the bottom wall of the third intake cavity 113, and one end of the third intake hole 116 far from the third intake cavity 113 is communicated with one end of the metal source pipeline 133.

[0055] Similarly, in this embodiment, the number of the isolation gas pipelines 132 is also two. Second air inlet holes 115 are formed at the bottoms of the two second air inlet chambers 112, and the two second air inlet holes 115 are in one-to-one communication with the two isolation gas pipelines 132. Actually, in this embodiment, the spraying member further includes an upper cover 125. The upper cover 125 is connected to the spraying bottom plate 110 and covers the side of the spraying bottom plate 110 facing away from the spraying panel 120. One ends of the oxygen source pipeline 131, the metal source pipeline 133, and the two isolation gas pipelines 132 are all connected to the upper cover 125. After the connection between the upper cover 125 and the spraying bottom plate 110 is completed, the oxygen source pipeline 131 is in communication with the first air inlet hole 114, the two isolation gas pipelines 132 are in one-to-one communication with the two second air inlet holes 115, and the metal source pipeline 133 is in communication with the third air inlet hole 116.

[0056] Please refer to Figure 5 and Figure 6 , Figure 5 The structural schematic diagram of the spraying bottom plate 110 from the second perspective is shown in Figure 6 The cross-sectional view of the connection structure of the spraying bottom plate 110, the spraying panel 120, the upper cover 125, and the oxygen source pipeline 131 is shown in

[0057] In this embodiment, a first air inlet recess 117, a second air inlet recess 118, and a third air inlet recess 119 are concavely provided on the surface of the spraying bottom plate 110 on the side facing away from the spraying panel 120. One end of the first air inlet hole 114 away from the first air inlet chamber 111 is opened on the bottom wall of the first air inlet recess 117. The number of the second air inlet recesses 118 is also two. One ends of the two second air inlets away from the second air inlet chamber 112 are respectively opened on the bottom walls of the two second air inlet recesses 118. One end of the third air inlet hole 116 away from the third air inlet chamber 113 is opened on the bottom wall of the third air inlet recess 119.

[0058] It can be understood that when the upper cover 125 is covered on the spraying bottom plate 110, the upper cover 125 fits with the side of the spraying bottom plate 110 facing away from the spraying panel 120, realizing the mutual isolation of the first air inlet recess 117, the two second air inlet recesses 118, and the third air inlet recess 119. One end of the oxygen source pipeline 131 connected to the upper cover 125 is in communication with the first air inlet hole 114 through the first air inlet recess 117. One ends of the two isolation gas pipelines 132 respectively connected to the upper cover 125 are in communication with the two second air inlet holes 115 through the two second air inlet recesses 118. One end of the metal source pipeline 133 connected to the upper cover 125 is in communication with the third air inlet hole 116 through the third air inlet recess 119.

[0059] The first intake recess 117 provides a buffer space for the connection between the oxygen source pipeline 131 and the first intake hole 114. The two second intake recesses 118 provide buffer spaces for the connections between the two isolation gas pipelines 132 and the two second intake holes 115. The third intake recess 119 provides a buffer space for the connection between the metal source pipeline 133 and the third intake hole 116, preventing intake failures and gas cross-leakage in case the respective pipelines and corresponding intake holes cannot be fully aligned due to assembly errors.

[0060] Please continue to refer to Figure 4 , in this embodiment, main path control valves 135 are provided between the two ends of the oxygen source pipeline 131, between the two ends of the isolation gas pipeline 132, and between the two ends of the metal source pipeline 133. The main path control valves 135 on different pipelines are used to control the on-off of both ends of the pipeline. For example, the main path control valve 135 on the oxygen source pipeline 131 is used to control the conduction or disconnection of both ends of the oxygen source pipeline 131.

[0061] The intermediate shunt pipeline 134 is used to selectively connect one end of the oxygen source pipeline 131, the isolation gas pipeline 132, and the metal source pipeline 133 that is far from the spraying member, across the corresponding main path control valve 135, to the ends of the oxygen source pipeline 131, the isolation gas pipeline 132, and the metal source pipeline 133 that are close to the spraying member.

[0062] During the process of spatial deposition, the intermediate shunt pipeline 134 remains disconnected, and the main path control valves 135 on the oxygen source pipeline 131, the isolation gas pipeline 132, and the metal source pipeline 133 all remain open, so that the oxygen source gas introduced by the oxygen source pipeline 131 directly flows into the first intake chamber 111 without passing through the intermediate shunt pipeline 134, the isolation gas introduced by any isolation gas pipeline 132 directly flows into the corresponding second intake chamber 112 without passing through the intermediate shunt pipeline 134, and the metal source gas introduced by the metal source pipeline 133 directly flows into the third intake chamber 113 without passing through the intermediate shunt pipeline 134.

[0063] The intermediate shunt pipeline 134 includes a bypass pipe section 1341 and a plurality of branch pipe sections 1342. One end of the bypass pipe section 1341 is connected to the ends of the oxygen source pipeline 131, the isolation gas pipeline 132, and the metal source pipeline 133 that are far from the spraying member through the plurality of branch pipe sections 1342. The other end of the bypass pipe section 1341 is connected to the ends of the oxygen source pipeline 131, the isolation gas pipeline 132, and the metal source pipeline 133 that are close to the spraying member through the plurality of branch pipe sections 1342. Shunt control valves 1343 are provided on each branch pipe section 1342.

[0064] In other words, any one of the oxygen source pipeline 131, the isolation gas pipeline 132, and the metal source pipeline 133 is connected to the bypass pipe section 1341 through a branch pipe section 1342 at the positions on both ends of the main path control valve 135, and the on-off states of the branch control valves 1343 provided on the two branch pipe sections 1342 with respect to the bypass pipe section 1341 are controlled. When spatial deposition is required, the main path control valves 135 on the oxygen source pipeline 131, the isolation gas pipeline 132, and the metal source pipeline 133 are all kept open, and the branch control valves 1343 on all the branch pipe sections 1342 are all kept closed.

[0065] When time-based deposition is required, the main path control valves 135 on the oxygen source pipeline 131, the isolation gas pipeline 132, and the metal source pipeline 133 are controlled to be all closed. First, the branch control valve 1343 on the branch pipe section 1342 connecting the bypass pipe section 1341 to the end of the oxygen source pipeline 131 away from the spray member, and the branch control valves 1343 on the multiple branch pipe sections 1342 connecting the bypass pipe section 1341 to the ends of the oxygen source pipeline 131, the two isolation gas pipelines 132, and the metal source pipeline 133 close to the spray member are opened and then closed. The oxygen source gas introduced at the end of the oxygen source pipeline 131 away from the spray member is simultaneously diverted through the intermediate shunt pipeline 134 to the ends of the oxygen source pipeline 131, the two isolation gas pipelines 132, and the metal source pipeline 133 close to the spray member, so that the first spray area 121, the two second spray areas 122, and the third spray area 123 on the spray panel 120 all pulse-spray the oxygen source gas.

[0066] After that, the branch control valve 1343 on the branch pipe section 1342 connecting the bypass pipe section 1341 to the end of at least one isolation gas pipeline 132 away from the spray member, and the branch control valves 1343 on the multiple branch pipe sections 1342 connecting the bypass pipe section 1341 to the ends of the oxygen source pipeline 131, the two isolation gas pipelines 132, and the metal source pipeline 133 close to the spray member are opened and then closed. The isolation gas introduced at the end of at least one isolation gas pipeline 132 away from the spray member is simultaneously diverted through the intermediate shunt pipeline 134 to the ends of the oxygen source pipeline 131, the two isolation gas pipelines 132, and the metal source pipeline 133 close to the spray member, so that the first spray area 121, the two second spray areas 122, and the third spray area 123 on the spray panel 120 all pulse-spray the isolation gas.

[0067] Finally, control the flow control valve 1343 on the branch pipe section 1342 of the bypass pipe section 1341 connecting the end of the metal source pipeline 133 far from the spraying part, and the flow control valves 1343 on the multiple branch pipe sections 1342 of the bypass pipe section 1341 connecting the oxygen source pipeline 131, the two isolation gas pipelines 132, and the ends of the metal source pipeline 133 close to the spraying part to open and then close. Make the metal source gas introduced at the end of the metal source pipeline 133 far from the spraying part flow through the intermediate shunt pipeline 134 and be diverted to the oxygen source pipeline 131, the two isolation gas pipelines 132, and the ends of the metal source pipeline 133 close to the spraying part at the same time, so that the first spraying area 121, the two second spraying areas 122, and the third spraying area 123 on the spraying panel 120 all pulse-spray the metal source gas.

[0068] It should be noted that the main path control valve 135 and the flow control valve 1343 can be either manual valves or electrically controlled valves. In other words, the switching and process control of the spatial deposition function and the time-based deposition function can be completed manually or automatically.

[0069] For the structure of the pipeline system 130, it can also be adjusted according to actual application conditions in other embodiments. Please refer to Figure 7 , Figure 7 The figure shows the structural schematic diagram of the pipeline system 130 in another embodiment.

[0070] In this embodiment, two sectional control valves 136 are arranged at intervals on the oxygen source pipeline 131, the isolation gas pipeline 132, and the metal source pipeline 133. For any one of the oxygen source pipeline 131, the isolation gas pipeline 132, and the metal source pipeline 133, it is only conductive when the corresponding two sectional control valves 136 are both open. The intermediate shunt pipeline 134 is used to selectively connect the parts of the oxygen source pipeline 131, the isolation gas pipeline 132, and the metal source pipeline 133 between their respective corresponding two sectional control valves 136.

[0071] In this embodiment, the intermediate shunt pipeline 134 includes a first branch pipe 1344 and a second branch pipe 1345. The two ends of the first branch pipe 1344 are respectively connected to the parts between the corresponding two sectional control valves 136 on the oxygen source pipeline 131 and the isolation gas pipeline 132, and the two ends of the second branch pipe 1345 are respectively connected to the parts between the corresponding two sectional control valves 136 on the isolation gas pipeline 132 and the metal source pipeline 133. Bypass control valves 1346 are arranged on both the first branch pipe 1344 and the second branch pipe 1345.

[0072] During the process of spatial deposition, the intermediate shunt pipeline 134 remains disconnected, that is, the bypass control valves 1346 on the first branch pipe 1344 and the second branch pipe 1345 are both kept closed. The two sectional control valves 136 of each of the oxygen source pipeline 131, the isolation gas pipeline 132, and the metal source pipeline 133 are all kept open, so that the oxygen source gas introduced by the oxygen source pipeline 131 directly flows into the first intake cavity 111 without passing through the intermediate shunt pipeline 134, the isolation gas introduced by any isolation gas pipeline 132 directly flows into the corresponding second intake cavity 112 without passing through the intermediate shunt pipeline 134, and the metal source gas introduced by the metal source pipeline 133 directly flows into the third intake cavity 113 without passing through the intermediate shunt pipeline 134.

[0073] During time-based deposition, first, control the closing of one sectional control valve 136 of each of the isolation gas pipeline 132 and the metal source pipeline 133 that is farther away from the spray member, and control the opening and then closing of the two sectional control valves 136 on the oxygen source pipeline 131, one sectional control valve 136 of each of the isolation gas pipeline 132 and the metal source pipeline 133 that is closer to the spray member, and the two bypass control valves 1346 on the first branch pipe 1344 and the second branch pipe 1345. So that the oxygen source gas introduced at the end of the oxygen source pipeline 131 that is farther away from the spray member, while flowing into the first intake cavity 111, will also be diverted through the first branch pipe 1344 and the second branch pipe 1345 to the ends of the isolation gas pipeline 132 and the metal source pipeline 133 that are closer to the spray member, so that the first spray area 121, the second spray area 122, and the third spray area 123 on the spray panel 120 are all pulsed with oxygen source gas.

[0074] After that, control the closing of one sectional control valve 136 of each of the oxygen source pipeline 131 and the metal source pipeline 133 that is farther away from the spray member, and control the opening and then closing of the two sectional control valves 136 on the isolation gas pipeline 132, one sectional control valve 136 of each of the oxygen source pipeline 131 and the metal source pipeline 133 that is closer to the spray member, and the two bypass control valves 1346 on the first branch pipe 1344 and the second branch pipe 1345. So that the isolation gas introduced at the end of the isolation gas pipeline 132 that is farther away from the spray member, while flowing into the second intake cavity 112, will also be diverted through the first branch pipe 1344 and the second branch pipe 1345 to the ends of the oxygen source pipeline 131 and the metal source pipeline 133 that are closer to the spray member, so that the first spray area 121, the second spray area 122, and the third spray area 123 on the spray panel 120 are all pulsed with isolation gas.

[0075] Finally, close a segmented control valve 136 on each of the oxygen source pipeline 131 and the isolation pipeline 132 that is farther away from the spraying member, and close the two segmented control valves 136 on the metal source pipeline 133, a segmented control valve 136 on each of the oxygen source pipeline 131 and the isolation pipeline 132 that is closer to the spraying member, and the two bypass control valves 1346 on the first branch pipe 1344 and the second branch pipe 1345 after opening. When the metal source gas introduced at one end of the metal source pipeline 133 away from the spraying member flows into the third intake cavity 113, it will also flow through the first branch pipe 1344 and the second branch pipe 1345 to the ends of the oxygen source pipeline 131 and the isolation pipeline 132 that are closer to the spraying member, so that the first spraying area 121, the second spraying area 122, and the third spraying area 123 on the spraying panel 120 are all pulsed to spray the metal source gas.

[0076] In summary, the ALD spraying system 100 provided in this embodiment can not only meet the spraying requirements of time-based deposition but also meet the spraying requirements of space-based deposition. The ALD device 200 provided in this embodiment has both time-based deposition and space-based deposition functions, and can deposit different film layers on the substrate in different deposition manners, so as to balance the film formation quality and production efficiency.

[0077] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. An ALD spraying system, characterized in that, Including: A spraying member, the spraying member includes a spraying bottom plate (110) and a spraying panel (120) connected to each other. The surface of the spraying bottom plate (110) is respectively recessed with a first air inlet cavity (111), a second air inlet cavity (112) and a third air inlet cavity (113). The surface of the spraying panel (120) has a first spraying area (121), a second spraying area (122) and a third spraying area (123). The second spraying area (122) separates the first spraying area (121) from the third spraying area (123). The first spraying area (121) covers the first air inlet cavity (111), the second spraying area (122) covers the second air inlet cavity (112), and the third spraying area (123) covers the third air inlet cavity (113); A pipeline system (130), the pipeline system (130) has an oxygen source pipeline (131), an isolation gas pipeline (132), a metal source pipeline (133) and an intermediate shunt pipeline (134). One end of the oxygen source pipeline (131) is communicated with the first air inlet cavity (111), and the other end is used for introducing oxygen source gas; One end of the isolation gas pipeline (132) is communicated with the second air inlet cavity (112), and the other end is used for introducing isolation gas; One end of the metal source pipeline (133) is communicated with the third air inlet cavity (113), and the other end is used for introducing metal source gas; The intermediate shunt pipeline (134) is respectively connected to the oxygen source pipeline (131), the isolation gas pipeline (132) and the metal source pipeline (133), and is used for selectively connecting the oxygen source pipeline (131), the isolation gas pipeline (132) and the metal source pipeline (133).

2. The ALD spraying system according to claim 1, characterized in that, The spraying panel (120) is circular. The number of the second air inlet cavities (112) and the second spraying areas (122) is both two. The two second air inlet cavities (112) and the two second spraying areas (122) correspond one by one. The first spraying area (121), the third spraying area (123) and the two second spraying areas (122) are respectively four fan-shaped areas constituting the spraying panel (120); And in the same circumferential direction, the first spraying area (121), one of the two second spraying areas (122), the third spraying area (123) and the remaining one second spraying area (122) are arranged in sequence.

3. The ALD spraying system according to claim 1, wherein A first air inlet recess (117), a second air inlet recess (118) and a third air inlet recess (119) are concavely provided on a surface of the spray base plate (110) facing away from the spray panel (120); a first air inlet hole (114), a second air inlet hole (115) and a third air inlet hole (116) are also penetrated through the spray base plate (110); the first air inlet cavity (111) is connected to the first air inlet recess (117) through the first air inlet hole (114); the first air inlet recess (119) is connected to the spray panel (120); 117) is connected to one end of the oxygen source pipeline (131); the second air inlet cavity (112) is connected to the second air inlet recess (118) through the second air inlet hole (115), and the second air inlet recess (118) is connected to one end of the isolation air pipeline (132); the third air inlet cavity (113) is connected to the third air inlet recess (119) through the third air inlet hole (116), and the third air inlet recess (119) is connected to one end of the metal source pipeline (133).

4. The ALD spray system according to claim 3, wherein The spray component further comprises an upper cover (125), wherein the upper cover (125) is connected to the spray base plate (110) and covers the first air inlet recess (117), the second air inlet recess (118) and the third air inlet recess (119); one end of the oxygen source pipeline (131) is connected to a position of the upper cover (125) corresponding to the first air inlet recess (117); one end of the isolation gas pipeline (132) is connected to a position of the upper cover (125) corresponding to the second air inlet recess (118); and one end of the metal source pipeline (133) is connected to a position of the upper cover (125) corresponding to the third air inlet recess (119).

5. The ALD spray system according to claim 1, wherein A main control valve (135) is provided between the two ends of the oxygen source pipeline (131), between the two ends of the isolation gas pipeline (132), and between the two ends of the metal source pipeline (133); the intermediate diversion pipeline (134) is used to selectively connect one end of the oxygen source pipeline (131), the isolation gas pipeline (132), and the metal source pipeline (133) away from the spray component, and to pass through the corresponding main control valve (135) to at least one end of the oxygen source pipeline (131), the isolation gas pipeline (132), and the metal source pipeline (133) close to the spray component.

6. The ALD spray system according to claim 5, characterized in that, The intermediate shunt pipeline (134) includes a bypass pipe section (1341) and a plurality of branch pipe sections (1342). One end of the bypass pipe section (1341) is connected to the ends of the oxygen source pipeline (131), the isolation gas pipeline (132), and the metal source pipeline (133) that are away from the spraying member through the plurality of branch pipe sections (1342), and the other end of the bypass pipe section (1341) is connected to the ends of the oxygen source pipeline (131), the isolation gas pipeline (132), and the metal source pipeline (133) that are close to the spraying member through the plurality of branch pipe sections (1342); the main path control valves (135) corresponding to the oxygen source pipeline (131), the isolation gas pipeline (132), and the metal source pipeline (133) are located between the two branch pipe sections (1342) connected to each of them, and a shunt control valve (1343) is provided on each of the branch pipe sections (1342).

7. The ALD spray system according to claim 1, wherein Two sectional control valves (136) are arranged at intervals on each of the oxygen source pipeline (131), the isolation gas pipeline (132), and the metal source pipeline (133); the intermediate shunt pipeline (134) is used to selectively connect the portions of the oxygen source pipeline (131), the isolation gas pipeline (132), and the metal source pipeline (133) between the two corresponding sectional control valves (136).

8. The ALD spray system according to claim 7, wherein The intermediate shunt pipeline (134) includes a first branch pipe (1344) and a second branch pipe (1345). The two ends of the first branch pipe (1344) are respectively connected to the portions of the oxygen source pipeline (131) and the isolation gas pipeline (132) between the two corresponding sectional control valves (136), and the two ends of the second branch pipe (1345) are respectively connected to the portions of the isolation gas pipeline (132) and the metal source pipeline (133) between the two corresponding sectional control valves (136). Bypass control valves (1346) are provided on both the first branch pipe (1344) and the second branch pipe (1345).

9. An ALD device, characterized in that, It includes a deposition chamber (210), a heater (220), and the ALD spraying system (100) according to any one of claims 1-8. The heater (220) and the spraying member are both accommodated in the deposition chamber (210). The spraying panel (120) is arranged opposite to the heater (220), and there is a deposition space (240) for accommodating the substrate between them.

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