Pneumatic valve, gas supply device and substrate processing system
By designing a pneumatic valve to cover the process gas flow path, the residual problem inside the pneumatic valve is solved, ensuring that the inside of the pneumatic valve is completely purged, preventing particles from being generated, and improving wafer yield.
Patent Information
- Application Number
- CN202421942464.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-12
- Publication Date
- 2025-07-11
- Estimated Expiration
- 2034-08-12
AI Technical Summary
In existing pneumatic valves, the processing gas flow path and the purge gas flow path do not overlap after being separated, resulting in some paths being unable to be purged, resulting in the processing gas remaining and attached to the inner wall of the pipeline, forming a coating and producing particles, affecting the performance of the wafer.
A pneumatic valve is designed to completely cover the process gas flow path, ensuring that all parts of the pneumatic valve are covered by the pneumatic gas, and the surface is polished using stainless steel materials such as SUS316L.
Effectively prevent treatment gas from remaining on the inner wall of the internal pipeline of the pneumatic valve, prevent particles from entering the processing chamber, and improve wafer yield.
Smart Images
Figure CN223090114U_ABST
Abstract
Description
Technical Field
[0001] The present utility model relates to a pneumatic valve, a gas supply device including the pneumatic valve, and a substrate processing system including the gas supply device. Background Art
[0002] In the manufacturing process of semiconductor devices, various substrate processes such as etching and film formation are performed on a semiconductor substrate (e.g., a wafer) disposed in a processing chamber.
[0003] There are many methods of film formation, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), ion implantation, sputtering, etc. These methods can be used to form thin films of different materials on the wafer surface to achieve specific functions. For example, hexachloro-disilane (molecular formula: Cl6Si2, abbreviated as HCD) gas can be used to deposit a silicon-containing film on a substrate by chemical vapor deposition (CVD).
[0004] After the deposition step is completed, the supply of HCD gas is stopped, and a purge gas (usually nitrogen gas (N2)) is used to purge the pipeline to remove the remaining HCD gas. The supply of HCD gas and the purge gas can be controlled by a pneumatic valve. Summary of the Utility Model
[0005] Technical Problem to be Solved by the Utility Model
[0006] After the above deposition step is completed, the pneumatic valve that controls the supply of special gases such as HCD gas is closed, and a purge gas such as N2 gas is used to purge the HCD gas remaining in the pipeline and inside the pneumatic valve.
[0007] However, inside a conventional pneumatic valve, the flow paths of special gases such as HCD and the flow paths of purge gases such as N2 overlap only at the starting part and then completely separate. Therefore, when purging with the purge gas, in the pipeline inside the pneumatic valve, the part of the processing gas flow path that does not overlap with the purge gas flow path (i.e., the part that the purge gas does not flow through) cannot be purged. In this unpurged part, HCD remains and adheres to the inner wall of the pipeline. In addition, HCD may decompose under specific conditions, and the decomposition products may also adhere to the inner wall of the pipeline, thereby forming a coating on the inner wall of the pipeline. Particles may be generated from this coating. In the case where such particles are generated, when the processing gas is supplied to the pipeline again to process the wafer in the processing chamber, the above particles may enter the processing chamber together with the processing gas and fall on the surface of the wafer, causing an adverse effect on the performance of the wafer.
[0008] Means for Solving the Technical Problem
[0009] The present utility model is made in view of the above problems, and its purpose is to provide a pneumatic valve capable of purging all pipelines inside the pneumatic valve, a gas supply device including the pneumatic valve, and a substrate processing system including the gas supply device.
[0010] According to one aspect of the present utility model, there is provided a pneumatic valve used in a substrate processing system for processing a substrate, characterized by including: an air inlet for introducing a processing gas for processing the substrate or a purging gas for purging the inside of the pneumatic valve into the inside of the pneumatic valve; a processing gas valve for controlling the flow of the processing gas to a processing chamber of the substrate processing system; a purging gas valve for controlling the flow of the purging gas supplied to the inside of the pneumatic valve to a purging pipeline outside the pneumatic valve; a processing gas flow path from the air inlet to the processing gas valve; a purging gas flow path from the air inlet to the purging gas valve; a processing gas outflow path having one end connected to the processing gas valve and the other end connected to the processing chamber; and a purging gas outflow path having one end connected to the purging gas valve and the other end connected to the purging pipeline, wherein the purging gas flow path completely covers the processing gas flow path.
[0011] In some embodiments, the processing gas flow path is a part of the purging gas flow path.
[0012] In some embodiments, the processing gas valve is located midway in the purging gas flow path.
[0013] In some embodiments, in the flow direction of the purging gas in the valve body of the pneumatic valve, the purging gas valve is located on the downstream side of the processing gas valve.
[0014] In some embodiments, the air inlet and the outlet of the purging gas outflow path are on one side of the valve body of the pneumatic valve, and the outlet of the processing gas outflow path is on the other side of the valve body of the pneumatic valve.
[0015] In some embodiments, the material of the pneumatic valve is stainless steel.
[0016] In some embodiments, the stainless steel is SUS316L.
[0017] According to another aspect of the present utility model, there is provided a gas supply device which is a gas supply device in a substrate processing system, characterized by including the above pneumatic valve.
[0018] According to another aspect of the present utility model, there is provided a substrate processing system, characterized in that: it includes the above-mentioned gas supply device.
[0019] Effect of the utility model
[0020] By using the pneumatic valve of the present utility model, by changing the gas flow path inside the pneumatic valve, all parts inside the pneumatic valve can be purged by the purging gas, which can effectively prevent the processing gas from remaining on the inner wall of the pipeline inside the pneumatic valve to form a coating and thus generate particles. Therefore, it can be avoided that the particles enter the processing chamber together with the processing gas and fall on the surface of the wafer, and the yield of the wafer can be improved. Description of the drawings
[0021] Figure 1 It is a schematic structural diagram showing the outline of the substrate processing system according to an embodiment of the present utility model.
[0022] Figure 2 It is a schematic cross-sectional view showing the pneumatic valve used in the gas supply device in the substrate processing system according to an embodiment of the present utility model (when supplying the processing gas).
[0023] Figure 3 It is a schematic cross-sectional view showing the pneumatic valve used in the gas supply device in the substrate processing system according to an embodiment of the present utility model (when supplying the purging gas).
[0024] Figure 4 It is a schematic cross-sectional view showing the pneumatic valve in the prior art (when supplying the processing gas).
[0025] Figure 5 It is a schematic cross-sectional view showing the pneumatic valve in the prior art (when supplying the purging gas).
[0026] It should be understood that for the sake of simplicity and / or clarity of the illustration, the elements shown in the drawings are not necessarily drawn to scale. For example, for clarity, the dimensions of some elements may be exaggerated relative to other elements. In addition, for the sake of easier understanding of the concept of the present utility model, sometimes elements known in the art are omitted in the drawings. The dimensions of the drawings do not represent the exact dimensions and / or dimensional ratios of the various elements in this specification.
[0027] Description of the reference numerals
[0028] 1: Substrate processing system (wafer processing system), 2: Gas supply device, 3: Processing chamber, 11: First processing gas supply source, 12: Second processing gas supply source, 13: Third processing gas supply source, 20: Purge gas supply source, NG1: Valve for first processing gas, NP1: Valve for first purge gas, NG2: Valve for second processing gas, NP2: Valve for second purge gas, NG3: Valve for third processing gas, NP3: Valve for third purge gas, 100, 200: Pneumatic valves, 101: Inlet, 102: Valve for processing gas, 103: Valve for purge gas, 104, 204: Processing gas flow path, 105, 205: Purge gas flow path, 106: Outlet of processing gas flow path, 107: Outlet of purge gas flow path, 108: Outlet of processing gas flow path, 109: Outlet of purge gas flow path. Detailed implementation manners
[0029] To make the objectives, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described in detail below with reference to the accompanying drawings. Apparently, the described embodiments are only a part rather than all of the embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present application without creative efforts shall fall within the scope of protection of the present application.
[0030] Unless otherwise defined, all technical and scientific terms used in the present application have the same meanings as those commonly understood by those skilled in the technical field to which the present application belongs; the terms used in the description of the present application are only for the purpose of describing specific embodiments and are not intended to limit the present application; the terms "including" and "having" and any variations thereof in the description of the present application are intended to cover non-exclusive inclusion.
[0031] In the description of the present application, it should be noted that, unless otherwise clearly defined and limited, the terms "installed", "connected" and "coupled" shall be understood in a broad sense. For example, it may be a fixed connection, a detachable connection or an integral connection; it may be a direct connection or an indirect connection through an intermediate medium. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.
[0032] It should be understood that ordinal numbers such as "first", "second", and "third" may be used in this specification to refer to elements. Unless otherwise specified, this is only for distinguishing different elements and does not imply that the elements mentioned must be in a given order in terms of time, space, or otherwise.
[0033] First, refer to Figures 1 to 3A wafer processing system 1 as an example of a substrate processing system according to an embodiment of the present invention and a pneumatic valve 100 used therein will be described.
[0034] Figure 1 It is a schematic structural diagram showing the outline of a wafer processing system 1 according to an embodiment of the present invention.
[0035] As Figure 1 shown, the wafer processing system 1 includes a gas supply device 2 and a processing chamber 3.
[0036] The gas supply device 2 includes: a first processing gas supply source 11 for supplying a first processing gas to the processing chamber 3; a second processing gas supply source 12 for supplying a second processing gas to the processing chamber 3; a third processing gas supply source 13 for supplying a third processing gas to the processing chamber 3; and a purge gas supply source 20 for supplying a purge gas.
[0037] The gas supply device 2 further includes: a first processing gas valve NG1 for controlling the flow of the first processing gas to the processing chamber 3; a first purge gas valve NP1 for controlling the flow of the purge gas for purging the remaining first processing gas in the wafer processing system 1; a second processing gas valve NG2 for controlling the flow of the second processing gas to the processing chamber 3; a second purge gas valve NP2 for controlling the flow of the purge gas for purging the remaining second processing gas in the wafer processing system 1; a third processing gas valve NG3 for controlling the flow of the third processing gas to the processing chamber 3; and a third purge gas valve NP3 for controlling the flow of the purge gas for purging the remaining third processing gas in the wafer processing system 1.
[0038] Figure 1 The number and arrangement of the processing gas supply source, purge gas supply source, processing gas valve, and purge gas valve shown are only examples and are not limited thereto.
[0039] Figure 2 It is a schematic cross-sectional view of the pneumatic valve 100 used in the gas supply device 2 in the wafer processing system 1 according to an embodiment of the present invention (when supplying the processing gas). Figure 3 It is a schematic cross-sectional view of the pneumatic valve 100 used in the gas supply device 2 in the wafer processing system 1 according to an embodiment of the present invention (when supplying the purge gas). At least one of the processing gas valves in the gas supply device 2 is the pneumatic valve 100 of the present invention. Hereinafter, the case where the second processing gas supplied from the second processing gas supply source 12 is hexachloroethylsilane (HCD) and the second processing gas valve NG2 is the pneumatic valve 100 of the present invention will be described as an example. The same applies to the case where other processing gas valves are the pneumatic valve 100.
[0040] As Figure 2 and Figure 3 shown, the pneumatic valve 100 includes: an air inlet 101 for introducing into the interior of the pneumatic valve 100 a processing gas (special gas, such as HCD) for processing a substrate or a purge gas (such as N2 gas) for purging the interior of the pneumatic valve 100; a processing gas valve 102 for controlling the flow of the processing gas to the processing chamber 3 of the substrate processing system 1; a purge gas valve 103 for controlling the flow of the purge gas supplied to the interior of the pneumatic valve 100 to the purge pipeline outside the pneumatic valve 100; a processing gas flow path 104 from the air inlet 101 to the processing gas valve 102; a purge gas flow path 105 from the air inlet 101 to the purge gas valve 103; a processing gas outflow path 106 having one end connected to the processing gas valve 102 and the other end connected to the processing chamber 3; and a purge gas outflow path 107 having one end connected to the purge gas valve 103 and the other end connected to the purge pipeline. The processing gas outflow path 106 has an outlet 108 on the processing chamber 3 side, and the purge gas outflow path 107 has an outlet 109 on the purge pipeline side.
[0041] In Figure 2 and Figure 3 the solid arrows inside the pneumatic valve 100 indicate the gas flow direction, Figure 2 the solid arrows in Figure 3 indicate the flow direction of the processing gas,
[0042] As Figure 2 shown, when depositing a silicon-containing film on a wafer in the processing chamber 3 by supplying HCD as a second processing gas (special gas) from the second processing gas supply source 12 via the pneumatic valve 100, HCD gas is introduced from the air inlet 101 and flows in the processing gas flow path 104 to the processing gas valve 102. At this time, the processing gas valve 102 is opened, the purge gas valve 103 is closed, and the HCD gas flows out through the processing gas valve 102 to the processing gas outflow path 106, and flows into the processing chamber 3 from the outlet 108 for deposition processing.
[0043] When the deposition processing of HCD in the processing chamber 3 is completed, as Figure 3As shown, nitrogen gas (N2 gas) is supplied as a purge gas from a purge gas supply source 20 to purge the residual HCD in the pipeline. At this time, the process gas valve 102 is closed, the purge gas valve 103 is opened, and N2 gas is introduced from the intake port 101 and made to flow in the purge gas flow path 105 to the purge gas valve 103. The N2 gas flows out through the purge gas valve 103 to the purge gas outflow path 107 and flows into the purge pipeline from the outlet 109.
[0044] In the pneumatic valve 100 of the present embodiment, as Figure 2 and Figure 3 shown, the purge gas flow path 105 completely covers the process gas flow path 104.
[0045] Specifically, the process gas flow path 104 is a part of the purge gas flow path 105. That is, the process gas valve 102 is located midway in the purge gas flow path 105 from the intake port 101 to the purge gas valve 103. In the gas flow direction (purge gas flow direction) inside the valve body of the pneumatic valve 100, the purge gas valve 103 is located on the downstream side of the process gas valve 102. The intake port 101 and the outlet 109 of the purge gas outflow path 107 are on one side of the valve body of the pneumatic valve 100 ( Figure 2 and Figure 3 the left side in Figure 2 and Figure 3 ), and the outlet 108 of the process gas outflow path 106 is on the other side of the valve body of the pneumatic valve 100 ( Figure 2 and Figure 3 the right side in Figure 2 and Figure 3 ).
[0046] As described above, in the pneumatic valve 100 of the present embodiment, the purge gas flow path 105 from the intake port 101 to the purge gas valve 103 completely covers the process gas flow path 104 from the intake port 101 to the process gas valve 102. Therefore, every time purging is performed using a purge gas (such as N2 gas), it is possible to purge all the paths through which the process gas (such as a special gas like HCD) flows, there is no part in the pipeline that cannot be purged, it is possible to effectively prevent the process gas from remaining in the pipeline, and the problem of particles generated due to the residual special gas such as HCD adhering to the inner wall of the pipeline and forming a coating can be eliminated.
[0047] The pneumatic valve 100 can be made of a known material. For example, the material of the pneumatic valve 100 can be stainless steel. This stainless steel can be SUS316L, for example. In addition, surface treatment such as polishing treatment can be performed on this stainless steel.
[0048] To more clearly illustrate the effects of the present embodiment, a comparison with the prior art will be described below.
[0049] Figure 4is a schematic cross-sectional view of the pneumatic valve 200 in the prior art (when supplying a processing gas). Figure 5 is a schematic cross-sectional view of the pneumatic valve 200 in the prior art (when supplying a purge gas).
[0050] According to Figure 2 、 Figure 3 and Figure 4 、 Figure 5 By comparison, it can be seen that the pneumatic valve 100 of the present invention has changed the flow direction of the internal gas path compared with the pneumatic valve 200 in the prior art. Specifically, the pneumatic valve 100 of the present invention has a processing gas flow path 104 and a purge gas flow path 105 inside, while the pneumatic valve 200 in the prior art has a processing gas flow path 204 and a purge gas flow path 205 inside.
[0051] In Figure 4 and Figure 5 the solid arrows inside the pneumatic valve 200 represent the gas flow direction, Figure 4 the solid arrow in Figure 5 represents the flow direction of the processing gas,
[0052] As Figure 4 shown, when supplying HCD as the second processing gas (special gas) from the second processing gas supply source 12 to the processing chamber 3 through the pneumatic valve 200 to deposit a silicon-containing film on the wafer in the processing chamber 3, the HCD gas is introduced from the inlet port 101 and flows through the processing gas flow path 204 to the processing gas valve 102. At this time, the processing gas valve 102 is opened, the purge gas valve 103 is closed, and the HCD gas flows out through the processing gas valve 102 to the processing gas outflow path 106, and flows into the processing chamber 3 from the outlet 108 for deposition processing.
[0053] When the deposition processing of HCD in the processing chamber 3 is completed, as Figure 5 shown, nitrogen gas (N2 gas) as the purge gas is supplied from the purge gas supply source 20 to purge the residual HCD in the pipeline. At this time, the processing gas valve 102 is closed, the purge gas valve 103 is opened, and the N2 gas is introduced from the inlet port 101 and flows through the purge gas flow path 205 to the purge gas valve 103. The N2 gas flows out through the purge gas valve 103 to the purge gas outflow path 107 and flows into the purge pipeline from the outlet 109.
[0054] In Figure 4 and Figure 5In the pneumatic valve 200 of the prior art shown, the processing gas flow path 204 and the purge gas flow path 205 only partially overlap, that is, they overlap in the part from the intake port 101 to the bifurcation point of the processing gas flow path 204 and the purge gas flow path 205. After this bifurcation point, the processing gas flow path 204 and the purge gas flow path 205 are completely separated and no longer overlap.
[0055] When purging is performed using N2 gas in the pneumatic valve 200, as Figure 5 shown, the N2 gas will only flow in the purge gas flow path 205 from the intake port 101 to the purge gas valve 103, and flow out from the purge gas outlet path 107 through the purge gas valve 103, and will not flow in the processing gas flow path 204 after the bifurcation point of the processing gas flow path 204 and the purge gas flow path 205 (that is, on the downstream side of this bifurcation point in the gas flow direction (purge gas flow direction)). That is, the N2 gas as the purge gas will not pass through all the pipelines through which the processing gas (special gas) flows, and cannot purge the processing gas (such as HCD) remaining in the pipelines it does not pass through.
[0056] As a result, in the pipelines through which special gases such as HCD gas flow and cannot be purged by N2 gas, HCD gas will remain. When the temperature drops, the remaining HCD gas will liquefy and adhere to the inner wall of the pipeline. In addition, HCD may decompose under specific conditions, and the decomposition products may also adhere to the inner wall of the pipeline, so a coating will be formed on the inner wall of this pipeline. As described above, particles may be generated from this coating, and these particles may enter the processing chamber together with the re-supplied processing gas and fall on the surface of the wafer, thereby having an adverse effect on the performance of the wafer.
[0057] To verify this, the present inventor conducted a comparative experiment. A wafer processing system including the pneumatic valve 100 of the present invention and a wafer processing system including the pneumatic valve 200 of the prior art were used respectively, and HCD was used as the special gas to perform deposition processing on the wafer in the processing chamber. When the deposition processing was completed, the valve bodies of the pneumatic valve 100 of the present invention and the pneumatic valve 200 of the prior art were cut using a Sodick wire electrical discharge machine respectively. Then, the internal gas path state of each pneumatic valve was inspected visually. Specifically, the color and gloss degree of the inner wall of the pipeline were mainly inspected. As a result, in the internal gas path of the pneumatic valve 100, the pipe wall had a bright metallic luster, while in the internal gas path of the pneumatic valve 200, in the part that could not be purged by the above-mentioned N2 gas, the pipe wall became dark and yellowish.
[0058] It can be seen therefrom that in the internal gas path of the pneumatic valve 200 of the prior art, the above-mentioned coating is formed on the pipe wall of the part that cannot be purged by N2 gas, while in the internal gas path of the pneumatic valve 100 of the present invention, all parts can be purged by N2 gas and the above-mentioned coating is not formed.
[0059] Therefore, by changing the direction of the internal gas path like the pneumatic valve 100 of the present invention, so that the purging gas can purge all the pipelines through which the processing gas flows inside the pneumatic valve, it is possible to effectively prevent the processing gas from remaining on the inner wall of the pipelines inside the pneumatic valve and forming a coating, thereby generating particles, and it is possible to avoid the particles from entering the processing chamber together with the re-supplied processing gas and falling on the wafer surface, and improve the yield of the wafer.
[0060] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, and are not intended to limit them; although the present application has been described in detail with reference to the above embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the above embodiments, or perform equivalent replacements on some of the technical features, but these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application.
Claims
1. A pneumatic valve, which is a pneumatic valve used in a substrate processing system for processing substrates, and is characterized in that, Comprising: An air inlet for introducing a processing gas for processing the substrate or a purge gas for purging the interior of the pneumatic valve into the interior of the pneumatic valve; A processing gas valve for controlling the flow of the processing gas to a processing chamber of the substrate processing system; A purge gas valve for controlling the flow of the purge gas supplied to the interior of the pneumatic valve to a purge pipeline outside the pneumatic valve; A processing gas flow path from the air inlet to the processing gas valve; A purge gas flow path from the air inlet to the purge gas valve; A processing gas outflow path, one end of which is connected to the processing gas valve and the other end of which is connected to the processing chamber; And A purge gas outflow path, one end of which is connected to the purge gas valve and the other end of which is connected to the purge pipeline, The purge gas flow path completely covers the processing gas flow path.
2. The pneumatic valve according to claim 1, characterized in that: The processing gas flow path is a part of the purge gas flow path.
3. The pneumatic valve according to claim 1, characterized in that: The processing gas valve is located in the middle of the purge gas flow path.
4. The pneumatic valve according to claim 1, characterized in that: In the flow direction of the purge gas in the valve body of the pneumatic valve, the purge gas valve is located on the downstream side of the processing gas valve.
5. The pneumatic valve according to claim 1, characterized in that: The air inlet and the outlet of the purge gas outflow path are on one side of the valve body of the pneumatic valve, and the outlet of the processing gas outflow path is on the other side of the valve body of the pneumatic valve.
6. The pneumatic valve according to claim 1, characterized in that: The material of the pneumatic valve is stainless steel.
7. The pneumatic valve according to claim 6, characterized in that: The stainless steel is SUS316L.
8. A gas supply device, which is a gas supply device in a substrate processing system, characterized in that: It includes the pneumatic valve according to any one of claims 1 to 7.
9. A substrate processing system, characterized in that: It includes the gas supply device according to claim 8.