Semiconductor electrostatic protection structure

Abstract

The utility model relates to the technical field of semiconductors, and specifically discloses a semiconductor electrostatic protection structure comprising a protection plate, the upper end face of the protection plate is provided with a semiconductor, the upper end face of the protection plate is provided with an insulation protection shell located at the outer side of the semiconductor, and the left and right sides of the insulation protection shell are fixedly connected with fixing frames. The outer walls of the two fixing frames are fixedly connected with two limiting frames, the lower end face of the protection plate is provided with two limiting frames which are distributed in the left-right direction, and the upper end faces of the two limiting frames are fixedly connected with limiting rods which penetrate through the protection plate and extend into the limiting frames. According to the invention, insulation protection can be carried out on the semiconductor, an electrostatic protection effect on the semiconductor is realized, and when the insulation protection shell needs to be disassembled, the limiting frame can drive the limiting rod to move downwards until the limiting rod is separated from the limiting frame, so that the limiting and fixing of the fixing frame can be relieved, and the insulation protection shell can be disassembled conveniently.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, in particular to a semiconductor electrostatic protection structure. Background Art

[0002] A semiconductor is a material with an electrical conductivity between that of an insulator and that of a conductor. Its electrical conductivity is easily controlled and can be used as a component material for information processing. From the perspective of science and technology or economic development, semiconductors are very important. The core units of many electronic products, such as computers, mobile phones, and digital recorders, use changes in the electrical conductivity of semiconductors to process information. Common semiconductor materials include silicon, germanium, gallium arsenide, etc., and silicon is the most influential semiconductor material in commercial applications.

[0003] At present, when using semiconductor electrostatic protection structures, most of them are connected to the outside of the semiconductor by bolts, and they need to be disassembled with the help of external tools, which makes it inconvenient to install and disassemble the electrostatic protection structure. Therefore, it is necessary to propose a semiconductor electrostatic protection structure to solve the above-mentioned problems. Utility Model Content

[0004] The utility model aims to provide a semiconductor electrostatic protection structure, which has the characteristics of insulating and protecting the semiconductor, achieving the electrostatic protection effect of the semiconductor, and facilitating the installation and disassembly of the insulating protection shell.

[0005] To achieve the above-mentioned purpose, the utility model provides the following technical solutions: a semiconductor electrostatic protection structure, including a protection plate, a semiconductor is installed on the upper end surface of the protection plate, an insulating protection shell located on the outside of the semiconductor is installed on the upper end surface of the protection plate, a conductive shielding layer is installed on the inner wall of the insulating protection shell, the left and right sides of the insulating protection shell are fixedly connected with fixing frames, the outer walls of the two fixing frames are fixedly connected with two limit frames, the lower end surface of the protection plate is installed with two limit frames distributed on the left and right, the upper end surfaces of the two limit frames are fixedly connected with limit rods that penetrate the protection plate and extend into the limit frames, the lower end surface of the protection plate is provided with a groove, and a spring is installed between the inside of the groove and the limit frame.

[0006] In order to achieve an anti-static effect, as a preferred semiconductor electrostatic protection structure of the utility model, a mounting groove is provided on the upper end surface of the protection plate, and an insulating plate is installed inside the mounting groove.

[0007] In order to facilitate the installation of the pins of the semiconductor, as a preferred embodiment of the semiconductor electrostatic protection structure of the present invention, the outer wall of the insulating protection shell is provided with a long groove.

[0008] In order to stably install the fixing frame on the protection plate, as an optimization of the semiconductor electrostatic protection structure of the present utility model, a fixing groove matching the fixing frame is provided on the upper end surface of the protection plate.

[0009] In order to check the usage condition of the insulating plate, as an optimization of the semiconductor electrostatic protection structure of the present utility model, a connection hole communicating with the installation groove is provided through the middle of the protection plate.

[0010] Compared with the prior art, the beneficial effects of the present utility model are as follows:

[0011] Firstly, by installing an insulating protection shell outside the semiconductor, the semiconductor can be insulated and protected, achieving the electrostatic protection effect on the semiconductor. The conductive shielding layer can facilitate the shielding of external electromagnetic waves. Secondly, when the insulating protection shell needs to be disassembled, the limiting frame can be pulled downward, causing the limiting rod to move downward with the limiting frame, stretching the spring until the limiting rod is separated from the limiting frame, thereby releasing the limiting fixation of the fixing frame and facilitating the disassembly of the insulating protection shell. Description of the Drawings

[0012] Figure 1 is the overall structure diagram of the present utility model;

[0013] Figure 2 is of the present utility model Figure 1 magnified view of part A;

[0014] Figure 3 is the three-dimensional structure diagram of the insulating protection shell of the present utility model.

[0015] In the figure: 1. Protection plate; 101. Installation groove; 102. Connection hole; 103. Groove; 2. Insulating plate; 3. Semiconductor; 4. Insulating protection shell; 401. Conductive shielding layer; 402. Long groove; 403. Fixing frame; 404. Limiting frame; 5. Limiting frame; 501. Limiting rod; 502. Spring. Detailed Embodiment

[0016] Please refer to Figures 1 to 3 , the semiconductor electrostatic protection structure includes a protection plate 1. A semiconductor 3 is installed on the upper end surface of the protection plate 1. An insulating protection shell 4 is installed on the upper end surface of the protection plate 1 outside the semiconductor 3. A conductive shielding layer 401 is installed on the inner wall of the insulating protection shell 4. Fixing frames 403 are fixedly connected to both the left and right sides of the insulating protection shell 4. Two limiting frames 404 are fixedly connected to the outer walls of the two fixing frames 403. Two limiting frames 5 distributed left and right are installed on the lower end surface of the protection plate 1. Limiting rods 501 penetrating through the protection plate 1 and extending into the limiting frames 404 are fixedly connected to the upper end surfaces of the two limiting frames 5. A groove 103 is provided on the lower end surface of the protection plate 1. A spring 502 is installed between the inside of the groove 103 and the limiting frame 5.

[0017] In this embodiment: By installing an insulating protective shell 4 outside the semiconductor 3, the semiconductor 3 can be insulated and protected, achieving the electrostatic protection effect for the semiconductor 3. The conductive shielding layer 401 can facilitate the shielding of external electromagnetic waves. Secondly, when the insulating protective shell 4 needs to be disassembled, the limiting frame 5 can be pulled downward, causing the limiting rod 501 driven by the limiting frame 5 to move downward, stretching the spring 502 until the limiting rod 501 is separated from the limiting frame 404, thereby releasing the limiting and fixing of the fixing frame 403 and facilitating the disassembly of the insulating protective shell 4.

[0018] As a technical optimization scheme of the present utility model, an installation groove 101 is provided on the upper end surface of the protective plate 1, and an insulating plate 2 is installed inside the installation groove 101.

[0019] In this embodiment: By installing the insulating plate 2 in the installation groove 101, the semiconductor 3 can be insulated, thereby achieving the anti-static effect.

[0020] As a technical optimization scheme of the present utility model, a long groove 402 is provided on the outer wall of the insulating protective shell 4.

[0021] In this embodiment: The long groove 402 facilitates the installation of the pins of the semiconductor 3.

[0022] As a technical optimization scheme of the present utility model, a fixing groove matching the fixing frame 403 is provided on the upper end surface of the protective plate 1.

[0023] In this embodiment: The fixing frame 403 can be stably installed on the protective plate 1 through the fixing groove.

[0024] As a technical optimization scheme of the present utility model, a connection hole 102 communicating with the installation groove 101 is provided through the middle of the protective plate 1.

[0025] In this embodiment: The connection hole 102 facilitates checking the usage condition of the insulating plate 2.

[0026] Working principle: First, by installing the insulating protective shell 4 outside the semiconductor 3, the semiconductor 3 can be insulated and protected, achieving the electrostatic protection effect for the semiconductor 3. The conductive shielding layer 401 can facilitate the shielding of external electromagnetic waves. By installing the insulating plate 2 in the installation groove 101, the semiconductor 3 can be insulated, thereby achieving the anti-static effect;

[0027] Secondly, when it is necessary to disassemble the insulation protection shell 4, the limit frame 5 can be pulled downward, so that the limit frame 5 drives the limit rod 501 to move downward, causing the spring 502 to stretch until the limit rod 501 is separated from the limit frame 404, and then the limit fixation of the fixing frame 403 can be released, thus facilitating the disassembly of the insulation protection shell 4. On the contrary, the insulation protection shell 4 is installed outside the semiconductor 3, and the lower end surface of the fixing frame 403 is located in the fixing groove. Then, the limit frame 5 is made to approach the protection plate 1 under the elastic force of the spring 502, prompting the limit rod 501 to enter the limit frame 404, and then the convenient installation of the insulation protection shell 4 can be realized.

[0028] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, and improvements made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.

Claims

1. A semiconductor electrostatic protection structure, including a protection plate (1), wherein a semiconductor (3) is installed on the upper end surface of the protection plate (1), and is characterized in that: An insulating protective shell (4) located outside the semiconductor (3) is installed on the upper end surface of the protective plate (1). A conductive shielding layer (401) is installed on the inner wall of the insulating protective shell (4). Fixing frames (403) are fixedly connected to both the left and right sides of the insulating protective shell (4). Two limiting frames (404) are fixedly connected to the outer walls of the two fixing frames (403). Two limiting frames (5) distributed left and right are installed on the lower end surface of the protective plate (1). Limiting rods (501) that penetrate the protective plate (1) and extend into the limiting frames (404) are fixedly connected to the upper end surfaces of the two limiting frames (5). A groove (103) is formed on the lower end surface of the protective plate (1). A spring (502) is installed between the inside of the groove (103) and the limiting frame (5).

2. The semiconductor electrostatic protection structure according to claim 1, wherein: An installation groove (101) is formed on the upper end surface of the protective plate (1). An insulating plate (2) is installed inside the installation groove (101).

3. The semiconductor electrostatic protection structure according to claim 1, wherein: A long groove (402) is formed on the outer wall of the insulating protective shell (4).

4. The semiconductor electrostatic protection structure according to claim 1, wherein: A fixing groove matching the fixing frame (403) is formed on the upper end surface of the protective plate (1).

5. The semiconductor electrostatic protection structure according to claim 1, wherein: A connection hole (102) communicating with the installation groove (101) is formed through the middle of the protective plate (1).

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