Semiconductor power device and electronic equipment

Abstract

The utility model provides a semiconductor power device and electronic equipment, which are applied to a half-bridge intelligent power module and comprise a packaging body, and a driving chip, a first base island and a second base island are arranged in the packaging body, and the first base island and the second base island are electrically isolated from each other; the first base island is provided with a first bearing surface for bearing a power tube and a first heat dissipation surface opposite to the first bearing surface; the second base island is provided with a second bearing surface for bearing the power tube and a second heat dissipation surface opposite to the second bearing surface; at least part of the first heat dissipation surface and at least part of the second heat dissipation surface are exposed out of the packaging body; the first bearing surface and the second bearing surface are respectively provided with a power tube. The power tube and the driving chip are connected to form a half-bridge circuit, and the half-bridge circuit is used for voltage conversion, energy transmission and circuit protection. The circuit adopts a power side base island exposed structure, and VB / VS pins are arranged on the same side, so that the circuit has the advantages of high reliability, low loss, high heat dissipation, compact structure, flexible application layout, low maintenance cost and the like.

Description

Technical Field

[0001] The utility model relates to the field of power drive control, and in particular, to a semiconductor power device and an electronic device. Background Art

[0002] With the rapid development of power electronics technology, as an important power conversion component, the half-bridge intelligent power module plays an increasingly important role in modern industries, new energy, transportation and other fields. The half-bridge intelligent power module is a power conversion unit composed of two switching tubes, where one switching tube is responsible for the output of positive voltage and the other is responsible for the output of negative voltage. By controlling the on and off of these two switching tubes, the energy conversion between the power supply and the load can be achieved. Compared with the full-bridge module, the half-bridge module has the characteristics of simple structure, easy control, and high reliability.

[0003] Currently, motor drive products are showing a trend of becoming more miniaturized and having a higher power density. The half-bridge intelligent power module has obvious advantages compared with the traditional single-tube solution. However, in some applications, such as high-speed air blowers, the internal space is small and irregular. Due to its function and packaging form, the layout of the common half-bridge intelligent power module is limited and it cannot match the product well; and due to problems such as materials, the heat dissipation performance of the product is poor. Summary of the Utility Model

[0004] In order to overcome the above deficiencies in the prior art, the present application provides a semiconductor power device applied to a half-bridge intelligent power module, including a package body, and a driving chip, a first base island and a second base island that are electrically isolated from each other are provided inside the package body.

[0005] The first base island has a first bearing surface for carrying a power tube, and a first heat dissipation surface opposite to the first bearing surface; the second base island has a second bearing surface for carrying a power tube, and a second heat dissipation surface opposite to the second bearing surface; at least part of the first heat dissipation surface and at least part of the second heat dissipation surface are exposed from the package body.

[0006] One power tube is respectively arranged on the first bearing surface and the second bearing surface, and the power tube is connected to the driving chip to form a half-bridge circuit, and the half-bridge circuit is used for voltage conversion, energy transfer and circuit protection.

[0007] In a possible implementation manner, the power tube includes a metal-oxide-semiconductor field effect transistor and an insulated gate bipolar transistor.

[0008] In a possible implementation manner, the semiconductor power device further includes a plurality of pins that are electrically isolated, and the pins include a first extension portion, a second extension portion and a third extension portion that are connected in sequence.

[0009] In a direction parallel to the first heat dissipation surface, the first extension portion extends from inside the package body in a direction away from the center position of the package body, the second extension portion extends from the first extension portion in a direction close to the first heat dissipation surface, and the third extension portion extends from the second extension portion in a direction away from the center position of the package body.

[0010] In a possible implementation manner, a plurality of the pins include a first pin and a second pin; the first pin is a high-side floating power return pin, and the second pin is a high-side floating power input pin.

[0011] In a direction parallel to the first heat dissipation surface, the first pin and the second pin are disposed on the same side of the semiconductor power device.

[0012] In a possible implementation manner, at least one rough surface area is respectively disposed on the first bearing surface and the second bearing surface.

[0013] In a possible implementation manner, the plurality of pins further include a third pin and a fourth pin; the third pin is used for overcurrent protection, and the fourth pin is used for temperature detection and fault output.

[0014] In a possible implementation manner, in a direction parallel to the first heat dissipation surface, the third pin and the fourth pin are disposed on the other side opposite to the side where the first pin and the second pin are located.

[0015] In a possible implementation manner, the material of the base island includes copper.

[0016] In some possible implementation manners, the material of the package body includes epoxy resin.

[0017] On the other hand, the present utility model provides an electronic device, including the aforementioned semiconductor power device.

[0018] Compared with the prior art, the present utility model has the following beneficial effects:

[0019] A semiconductor power device and an electronic device provided by the present utility model not only have functions of detecting and protecting faults such as undervoltage, overcurrent, and overheat, can ensure that the module itself is not damaged, but also adopt a structure with the power-side base island exposed outside, greatly improving the heat dissipation performance of the product, and the VB / VS pins are on the same side, which is more convenient for PCB layout wiring, having advantages such as high reliability, low loss, and high heat dissipation, and characteristics such as a compact structure, flexible application layout, and low maintenance cost. Description of the Drawings

[0020] To more clearly illustrate the technical solutions of the embodiments of the present utility model, the accompanying drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following accompanying drawings only show certain embodiments of the present utility model and should not be regarded as limiting the scope. For those of ordinary skill in the art, without creative efforts, other related accompanying drawings can also be obtained based on these drawings.

[0021] Figure 1 Front view of the semiconductor power device provided in this embodiment;

[0022] Figure 2 Cross-sectional view of the semiconductor power device provided in this embodiment;

[0023] Figure 3 Rear view of the semiconductor power device provided in this embodiment;

[0024] Figure 4 One of the flat cross-sectional views of the semiconductor power device provided in this embodiment;

[0025] Figure 5 Side view of the semiconductor power device provided in this embodiment;

[0026] Figure 6 Another rear view of the semiconductor power device provided in this embodiment;

[0027] Figure 7 Another flat cross-sectional view of the semiconductor power device provided in this embodiment;

[0028] Figure 8 Another rear view of the semiconductor power device provided in this embodiment;

[0029] Figure 9 Internal circuit diagram of the semiconductor power device provided in this embodiment.

[0030] Icon: 10 - semiconductor power device; 100 - package; 110 - first base island; 111 - first bearing surface; 112 - first heat dissipation surface; 120 - second base island; 121 - second bearing surface; 122 - second heat dissipation surface; 130 - drive chip; 140 - rough surface area; 200 - pin; 201 - first pin; 202 - second pin; 203 - third pin; 204 - fourth pin; 210 - first extension; 220 - second extension; 230 - third extension. Detailed implementation manners

[0031] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the following will clearly and completely describe the technical solutions in the embodiments of this application with reference to the accompanying drawings in the embodiments of this application. Obviously, the described embodiments are some, but not all, of the embodiments of this application. Components of the embodiments of this application usually described and illustrated in the accompanying drawings here can be arranged and designed in various different configurations.

[0032] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of this application that is claimed, but merely represents selected embodiments of this application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in this application without creative efforts fall within the scope of protection of this application.

[0033] It should be noted that like reference numerals and letters denote like items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0034] In the description of this application, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the utility model product is usually placed during use. It is only for the convenience of describing this application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. In addition, the terms "first", "second", "third", etc. are only used for descriptive distinction and should not be construed as indicating or implying relative importance.

[0035] In addition, the terms "horizontal", "vertical", "overhanging", etc. do not mean that the components are required to be absolutely horizontal or overhanging, but can be slightly inclined. For example, "horizontal" only means that its direction is more horizontal relative to "vertical", and does not mean that the structure must be completely horizontal, but can be slightly inclined.

[0036] In the description of this application, it should also be noted that unless otherwise clearly specified and limited, the terms "set", "installed", "connected", "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific situations.

[0037] The following will detail the specific implementation manners of this application with reference to the accompanying drawings.

[0038] A semiconductor power device 10 provided by the present application, please refer to Figure 1 and Figure 4 , which is applied to a half-bridge intelligent power module, including a package body 100. Inside the package body 100, there are a driving chip 130, a first base island 110 and a second base island 120 that are electrically isolated from each other.

[0039] Please refer to Figure 2 and Figure 3 , the first base island 110 has a first bearing surface 111 for carrying power tubes and a first heat dissipation surface 112 opposite to the first bearing surface 111; the second base island 120 has a second bearing surface 121 for carrying power tubes and a second heat dissipation surface 122 opposite to the second bearing surface 121; at least part of the first heat dissipation surface 112 and at least part of the second heat dissipation surface 122 are exposed on the package body 100.

[0040] Please refer to Figure 4 , a power tube is respectively arranged on the first bearing surface 111 and the second bearing surface 121; the power tube is connected to the driving chip 130 to form a half-bridge circuit, and the half-bridge circuit is used for voltage conversion, energy transfer and circuit protection.

[0041] In this embodiment, the semiconductor power device 10 is designed with the exposure of the power-side base island. By directly exposing the key heat-generating areas of the power components to the external environment or a specific heat dissipation medium, efficient heat conduction and release are achieved, thereby ensuring that the circuit can still maintain a stable temperature state under high-load operation, effectively avoiding performance degradation or failure risks caused by overheating.

[0042] In some possible implementation manners, the power tube includes a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and an Insulated Gate Bipolar Transistor (IGBT).

[0043] In this embodiment, two MOSFETs or two IGBTs are respectively arranged on the first bearing surface 111 and the second bearing surface 121. MOSFETs have low on-resistance and fast switching speed and are widely used in power electronic circuits; IGBTs have both high input impedance and can withstand large currents.

[0044] For example, when the half-bridge circuit consists of a high-side MOSFET and a low-side MOSFET, these two transistors are connected together through a common load. When the high-side MOSFET is turned on, a conductive channel is formed between its drain and source, enabling the power supply voltage to flow through the high-side MOSFET and the load to ground (or another power terminal, depending on the circuit configuration). At this time, the low-side MOSFET is in the off state and does not conduct, so it does not affect the output of the forward current. When it is necessary to switch to the reverse current output, the high-side MOSFET is truncated, that is, its conductive channel is closed. At the same time, the low-side MOSFET is turned on, and a conductive channel is also formed between its drain and source. At this time, the load is connected to ground, and the current flows through the low-side MOSFET and the load to the power supply (or another ground terminal).

[0045] For example, the half-bridge circuit consists of a high-side IGBT and a low-side IGBT. In the initial state, both IGBTs are in the off state, and no current flows through the load. At this time, if the DC power supply has been connected, the collector and emitter of each IGBT bear half of the power supply voltage respectively. When the drive circuit sends a turn-on signal to the high-side IGBT, the high-side IGBT starts to conduct, forming a current path from the positive pole of the DC power supply through the high-side IGBT to the load and then to ground. At this time, the low-side IGBT is still in the off state, and the diode connected in anti-parallel with it may conduct briefly due to the induced voltage in the load, but it will soon be suppressed by the conduction of the high-side IGBT. When it is necessary to stop delivering energy to the load, the drive circuit sends a turn-off signal to the high-side IGBT. After the high-side IGBT is turned off, the voltage between its collector and emitter rises rapidly, and at the same time, the current in the load begins to decrease.

[0046] In some applications, it may be necessary to achieve reverse driving or energy recovery of the load. At this time, a turn-on signal can be sent to the low-side IGBT within a certain period of time after the high-side IGBT is turned off. After the low-side IGBT is turned on, a current path is formed from ground through the low-side IGBT to the load and then to the negative pole of the DC power supply, realizing reverse energy transfer or recovery. In practical applications, the two IGBTs will conduct and turn off alternately to achieve continuous driving or control of the load. By adjusting parameters such as the switching frequency and duty cycle of the IGBT, precise control of parameters such as the load voltage and current can be achieved.

[0047] It should be noted that in order to implement various forms of building a half-bridge circuit and achieve various combination forms, the power transistors provided in this embodiment include but are not limited to the metal-oxide-semiconductor field effect transistor and the insulated gate bipolar transistor.

[0048] Please refer to Figure 5, in some possible implementation manners, the semiconductor power device 10 further includes a plurality of electrically isolated pins 200, and the pins 200 include a first extension portion 210, a second extension portion 220, and a third extension portion 230 that are connected in sequence.

[0049] In a direction parallel to the first heat dissipation surface 112, the first extension portion 210 extends from inside the package 100 in a direction away from the center position of the package 100, the second extension portion 220 extends from the first extension portion 210 in a direction close to the first heat dissipation surface 112, and the third extension portion 230 extends from the second extension portion 220 in a direction away from the center position of the package 100.

[0050] In this embodiment, the plurality of pins 200 are bent and include a first extension portion 210, a second extension portion 220, and a third extension portion 230 that are connected in sequence. The bending direction of the pins 200 faces the plane where the first heat dissipation surface 112 and the second heat dissipation surface 122 are located.

[0051] In some possible implementation manners, the plurality of pins 200 include a first pin 201 and a second pin 202; the first pin 201 is a high-side floating power return pin, and the second pin 202 is a high-side floating power input pin.

[0052] Please refer to Figure 6 , in a direction parallel to the first heat dissipation surface 112, the first pin 201 and the second pin 202 are disposed on the same side of the semiconductor power device 10.

[0053] In this embodiment, by disposing the first pin 201 and the second pin 202 on the same side, the power lines and signals related to these pins 200 can thus be routed in the same area, reducing the need to cross different layers and simplifying the routing process; the relative positions between the first pin 201 and the second pin 202 can be more easily controlled, reducing the crossing and coupling between signal lines, thereby reducing signal interference; when the first pin 201, the second pin 202, and the related circuits disposed on the same side fail, the debugging and maintenance work will be more convenient.

[0054] Please refer to FIG. 7. In some possible implementation manners, at least one rough surface area 140 is respectively disposed on the first bearing surface 111 and the second bearing surface 121.

[0055] In this embodiment, by providing at least one rough surface area 140 on the first bearing surface 111 and the second bearing surface 121, the contact area between the encapsulation material and the first base island 110 and the second base island 120 is increased, which helps the heat generated inside the package 100 to be conducted more quickly to the heat dissipation base island, thereby improving the heat dissipation efficiency.

[0056] In addition, the rough surface area 140 also provides more mechanical locking points, making the adhesion between the encapsulation material and the first base island 110 and the second base island 120 stronger, which helps to maintain the stability and reliability of the package under external environments such as temperature changes and vibrations.

[0057] Please refer to Figure 8 , in some possible implementation manners, the plurality of the pins 200 further include a third pin 203 and a fourth pin 204; the third pin 203 is used for overcurrent protection, and the fourth pin 204 is used for temperature detection and fault output.

[0058] Please refer to Figure 9 , compared with the prior art, in this embodiment, the half-bridge circuit is increased with a third pin 203 for overcurrent protection and a fourth pin 204 for temperature detection and fault output.

[0059] In this embodiment, an overcurrent detection circuit can be integrated in the driving or control part of the half-bridge circuit. This circuit includes a current sensor and a comparator. The current sensor can use a Hall effect sensor or a shunt resistor. The current sensor is used to monitor the current flowing through the load in real time, and the comparator compares the detected current with a preset threshold. When the detected current exceeds the threshold, the comparator outputs a signal, and this signal can be output to an external controller through the third pin 203, thereby triggering an overcurrent protection action.

[0060] In this embodiment, a temperature sensor can be integrated in the heat dissipation part of the half-bridge circuit. The temperature sensor can use a thermistor, a thermocouple or an integrated temperature sensor chip. This sensor is used to monitor the temperature of the circuit or components in real time. Connect the output of the temperature sensor to an analog-to-digital converter or a comparator to convert the temperature signal into a digital signal or a comparison result. Then, output the temperature information or the fault signal to an external controller or a display device through the fourth pin 204.

[0061] It should be noted that the above embodiments for improving the third pin 203 and the fourth pin 204 only represent the selected embodiments of the present application, rather than all embodiments.

[0062] Please refer to Figure 8, in some possible implementation manners, in a direction parallel to the first heat dissipation surface 112, the third pin 203 and the fourth pin 204 are disposed on the other side opposite to the side where the first pin 201 and the second pin 202 are located.

[0063] In some possible implementation manners, the material of the base island includes copper.

[0064] In this embodiment, the first base island 110 and the second base island 120 are made of copper. On the one hand, the thermal conductivity of copper is much higher than that of other common metals, such as aluminum, which can quickly conduct the heat generated by the power tube to the heat dissipation base island, and then dissipate it to the environment through the part of the heat dissipation base island exposed outside the package 100, effectively reducing the working temperature of the power tube and improving the stability and reliability of the system; at the same time, copper has high thermal conductivity, which can enable the heat to be quickly distributed within the base island, reducing the risk of local overheating, and also helps the power tube to maintain a lower working temperature in the high-frequency or high-power state. On the other hand, the copper material has relatively high tensile strength and hardness, which can withstand the mechanical stress and thermal stress generated by the power tube during operation, and maintain the stability and integrity of the heat dissipation base island.

[0065] In some possible implementation manners, the material of the package 100 includes epoxy resin.

[0066] The epoxy resin has a relatively low coefficient of thermal expansion, and its size changes little when the temperature changes, which is beneficial to maintaining the stability and reliability of the half-bridge circuit; at the same time, it can maintain stable performance at relatively high temperatures. In addition, the epoxy resin also has excellent mechanical properties, excellent chemical stability and electrical properties, and can provide a stable and reliable package. Therefore, in this embodiment, the package 100 is made of epoxy resin.

[0067] The embodiment of the present application further provides an electronic device, including the aforementioned semiconductor power device 10.

[0068] In summary, a semiconductor power device 10 and an electronic device provided by the present application are applied to a half-bridge intelligent power module, and include a package body 100. Inside the package body 100, there are a driving chip 130, a first base island 110 and a second base island 120 that are electrically isolated from each other. The first base island 110 has a first bearing surface 111 for carrying power tubes and a first heat dissipation surface 112 opposite to the first bearing surface 111. The second base island 120 has a second bearing surface 121 for carrying power tubes and a second heat dissipation surface 122 opposite to the second bearing surface 121. At least part of the first heat dissipation surface 112 and at least part of the second heat dissipation surface 122 are exposed on the package body 100. One power tube is respectively arranged on the first bearing surface 111 and the second bearing surface 121. The power tubes are connected to the driving chip 130 to form a half-bridge circuit, and the half-bridge circuit is used for voltage conversion, energy transfer and circuit protection. By adopting the structure of the exposed power-side base island and setting the VB / VS pins 200 on the same side, this circuit has the advantages of high reliability, low loss, high heat dissipation, compact structure, flexible application layout and low maintenance cost.

[0069] The foregoing is only a preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A semiconductor power device, characterized in that, Applied to a half-bridge intelligent power module, including a package body, inside which there are a driving chip, a first base island and a second base island that are electrically isolated from each other; The first base island has a first bearing surface for carrying a power transistor and a first heat dissipation surface opposite to the first bearing surface; The second base island has a second bearing surface for carrying a power transistor and a second heat dissipation surface opposite to the second bearing surface; At least part of the first heat dissipation surface and at least part of the second heat dissipation surface are exposed from the package body; One power transistor is respectively arranged on the first bearing surface and the second bearing surface; The power transistors are connected to the driving chip to form a half-bridge circuit, and the half-bridge circuit is used for voltage conversion, energy transfer and circuit protection.

2. The semiconductor power device according to claim 1, wherein The power transistors include metal-oxide-semiconductor field effect transistors and insulated gate bipolar transistors.

3. The semiconductor power device according to claim 1, wherein The semiconductor power device further includes a plurality of electrically isolated pins, and the pins include a first extension portion, a second extension portion and a third extension portion connected in sequence; In the direction parallel to the first heat dissipation surface, the first extension portion extends from inside the package body in a direction away from the center position of the package body, the second extension portion extends from the first extension portion in a direction close to the first heat dissipation surface, and the third extension portion extends from the second extension portion in a direction away from the center position of the package body.

4. The semiconductor power device according to claim 3, characterized in that, The plurality of pins include a first pin and a second pin; The first pin is a high-side floating power supply return pin, and the second pin is a high-side floating power supply input pin; In the direction parallel to the first heat dissipation surface, the first pin and the second pin are arranged on the same side of the semiconductor power device.

5. The semiconductor power device according to claim 1, characterized in that, At least one rough surface area is respectively arranged on the first bearing surface and the second bearing surface.

6. The semiconductor power device according to claim 4, wherein The plurality of pins further include a third pin and a fourth pin; The third pin is used for overcurrent protection, and the fourth pin is used for temperature detection and fault output.

7. The semiconductor power device according to claim 6, wherein In the direction parallel to the first heat dissipation surface, the third pin and the fourth pin are arranged on the other side opposite to the side where the first pin and the second pin are located.

8. The semiconductor power device according to claim 1, characterized in that The material of the base island includes copper.

9. The semiconductor power device according to claim 1, characterized in that, The material of the package body includes epoxy resin.

10. An electronic device, characterized in that, Including the semiconductor power device according to any one of claims 1-9.

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