Plasma device applied to peald equipment

Abstract

The utility model provides a plasma device applied to peald equipment, and relates to the technical field of plasma equipment. Comprising a plasma wall tube which is made of an aluminum nitride material, so that after plasmas are established in the plasma wall tube, the etching effect of the plasmas on the wall tube does not generate oxygen elements; the RF coil is arranged on the outer side of the plasma wall tube and used for providing an excitation electromagnetic field for the plasma wall tube; and the Faraday shielding cylinder is arranged between the plasma wall tube and the RF coil and is used for shielding the capacitive energy in the plasma. According to the scheme, the service life of the plasma device can be effectively prolonged, and the influence of oxygen elements is reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of plasma equipment, and more specifically, to a plasma device applied to a peald device. Background Art

[0002] For the existing plasma generating devices of single-chip peald equipment, quartz tubes or oxide ceramics are mostly used as plasma cavities. However, due to the material problem of the plasma cavity in the plasma generating device, during the process, due to the etching effect of the plasma on the wall tube, the oxygen element in the wall tube will be stripped and mixed into the produced nitride film. For the thin film process with extremely low oxygen content requirements, the film layer often cannot meet the performance requirements. Summary of the Utility Model

[0003] The utility model discloses a plasma device applied to a peald device, aiming to solve the problems mentioned above.

[0004] The utility model adopts the following scheme:

[0005] A plasma device applied to a peald device, comprising:

[0006] A plasma wall tube made of aluminum nitride material, so that after plasma is established in the plasma wall tube, the etching effect of the plasma on the wall tube will not generate oxygen element;

[0007] An RF coil arranged outside the plasma wall tube for providing an excitation electromagnetic field to the plasma wall tube;

[0008] A Faraday shielding cylinder arranged between the plasma wall tube and the RF coil for shielding the capacitive energy in the plasma.

[0009] Further, flanges are arranged at the upper and lower ends of the plasma wall tube, and process gas inlet pipes are arranged on the flanges.

[0010] Further, the flange is suitable for sleeving on the outer wall of the end of the plasma wall tube, and the plasma wall tube and the flange are connected by a movable seal.

[0011] Further, a sealing component and a sealing pressure flange are arranged between the plasma wall tube and the flange; wherein, the sealing pressure flange is suitable for moving outside the plasma wall tube to press the sealing component on the flange.

[0012] Further, the sealing assembly includes a sealing ring and a sealing gasket. Among them, the sealing gasket is disposed between the sealing ring and the flange, and the sealing ring is disposed between the sealing gasket and the sealing pressure flange.

[0013] Beneficial effects:

[0014] The plasma chamber of this patent is made of aluminum nitride material. After the plasma is established, the etching effect of the plasma on the wall tube will not generate oxygen elements. A Faraday shielding cylinder is added between the RF coil and the plasma wall tube, which greatly reduces the etching effect of the plasma on the plasma wall tube. The plasma wall tube is sealed in a movable sealing manner, which is convenient for disassembly and maintenance. Description of the drawings

[0015] Figure 1 is a schematic structural diagram of a plasma device applied to a peald device according to an embodiment of the present invention;

[0016] Figure 2 is a schematic diagram of a movable sealing structure of a plasma device applied to a peald device according to an embodiment of the present invention;

[0017] Reference numerals: plasma wall tube 1, RF coil 2, Faraday shielding cylinder 3, flange 4, sealing ring 5, sealing gasket 6, sealing pressure flange 7, process gas inlet pipe 8. Detailed implementation manners

[0018] Combined with Figure 1 , this embodiment provides a plasma device applied to a peald device, including: a plasma wall tube 1 made of aluminum nitride material, so that after the plasma is established in the plasma wall tube 1, the etching effect of the plasma on the wall tube will not generate oxygen elements; an RF coil 2 disposed outside the plasma wall tube 1 for providing an excitation electromagnetic field to the plasma wall tube 1; a Faraday shielding cylinder 3 disposed between the plasma wall tube 1 and the RF coil 2 for shielding the capacitive energy in the plasma.

[0019] In this embodiment, the plasma wall tube 1 is made of aluminum nitride material. Aluminum nitride material has high strength at room temperature, and the strength decreases slowly with the increase of temperature; it has good thermal conductivity, a small coefficient of thermal expansion, and is a good heat-resistant shock material; it has strong resistance to molten metal erosion, and aluminum nitride is also an electrical insulator with good dielectric properties. The plasma wall tube 1 made of aluminum nitride material will not generate oxygen elements under the etching effect of the plasma on the wall tube, so the performance requirements can be met even for thin film processes with extremely low oxygen content requirements. Here, the specific shape and structure of the plasma wall tube 1 can be not limited, and a cylindrical structure is preferably adopted. Flanges 4 are provided at both the upper and lower ends of the plasma wall tube 1, and a process gas inlet pipe 8 is provided on one of the flanges 4 for introducing process gas into the plasma wall tube 1.

[0020] Combined with Figure 2 As shown, the flange 4 is adapted to be sleeved on the outer wall of the end of the plasma wall tube 1, and the plasma wall tube and the flange 4 are connected by a movable seal. Specifically, a seal assembly and a seal pressing flange 7 are provided between the plasma wall tube and the flange 4; wherein, the seal pressing flange 7 is adapted to move outside the plasma wall tube to press the seal assembly against the flange 4. The seal assembly includes a seal ring 5 and a sealing ring 6. Among them, the sealing ring 6 is arranged between the seal ring 5 and the flange 4, and the seal ring 5 is arranged between the sealing ring 6 and the seal pressing flange 7. By adopting the movable seal method, it is convenient for disassembly and maintenance, and at the same time, the risk of vacuum failure can be reduced.

[0021] In this embodiment, a Faraday shielding cylinder 3 is provided between the RF coil 2 and the plasma wall tube 1 to shield the capacitive energy in the plasma, greatly reducing the etching effect of the plasma on the plasma wall tube 1 and preventing the plasma wall tube from being damaged.

[0022] Through this solution, the service life of the plasma device can be effectively improved and the influence of oxygen elements on the process can be reduced.

[0023] It should be understood that the above is only the preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiments. All technical solutions falling within the idea of the present invention belong to the protection scope of the present invention.

[0024] The above introduction to the drawings used in the embodiments only shows some embodiments of the present invention and should not be regarded as a limitation of the scope. For those of ordinary skill in the art, without creative efforts, other related drawings can also be obtained based on these drawings.

Claims

1. A plasma device applied to a peald device, characterized in that, Comprising: A plasma wall tube made of aluminum nitride material, so that after plasma is established in the plasma wall tube, the etching effect of the plasma on the wall tube will not generate oxygen elements; An RF coil disposed outside the plasma wall tube for providing an excitation electromagnetic field to the plasma wall tube; A Faraday shielding cylinder disposed between the plasma wall tube and the RF coil for shielding the capacitive energy in the plasma.

2. The plasma device applied to a peald device according to claim 1, characterized in that, Flanges are provided at the upper and lower ends of the plasma wall tube, and process gas inlet pipes are provided on the flanges.

3. The plasma device applied to a peald device according to claim 2, characterized in that, The flange is adapted to be sleeved on the outer wall of the end of the plasma wall tube, and the plasma wall tube and the flange are connected by a movable seal.

4. The plasma device applied to a peald device according to claim 3, wherein A seal assembly and a seal compression flange are provided between the plasma wall tube and the flange; wherein, the seal compression flange is adapted to move outside the plasma wall tube to press the seal assembly against the flange.

5. The plasma device applied to a peald device according to claim 4, characterized in that, The seal assembly includes a sealing ring and a sealing gasket, wherein the sealing gasket is disposed between the sealing ring and the flange, and the sealing ring is disposed between the sealing gasket and the seal compression flange.

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