Water baffle, cleaning device and chemical mechanical polishing equipment
By designing the arc-shaped structure and flow guide groove of the water barrier, the secondary pollution problem during the wafer cleaning process after chemical mechanical polishing is solved, and a more efficient cleaning effect is achieved.
Patent Information
- Application Number
- CN202422415768.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-08
- Publication Date
- 2025-07-25
- Estimated Expiration
- 2034-10-08
AI Technical Summary
In the manufacturing of semiconductor devices, after chemical mechanical polishing, stains on the wafer surface are prone to accumulate and drip during the cleaning process due to the cleaning liquid carrying the stain, resulting in secondary contamination of the wafer and affecting the cleaning effect.
A water barrier is designed to extend longitudinally along the arc track, forming a storage space for accommodating wafers on the inner side, and multiple diversion grooves are provided on the inner surface, so that the water barrier is inclined to facilitate the lateral flow of cleaning liquid to avoid accumulation and dripping.
It effectively avoids secondary contamination of the cleaning liquid on the wafer, improves the cleaning effect, and ensures the cleanliness of the wafer surface.
Smart Images
Figure CN223146869U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of semiconductor manufacturing equipment, and particularly to a water baffle, a cleaning device, and a chemical mechanical polishing equipment. Background Art
[0002] In the manufacturing of semiconductor devices, the chemical mechanical polishing (CMP) process is a process for planarizing wafers, such as pre-metal dielectric (PMD) or interlayer dielectric (ILD) polishing. After polishing and grinding, stains such as polishing slurry, grinding particles, and polishing residue particles remain on the surface of the wafer. In order to remove the stains on the wafer surface, a cleaning device is required to clean the wafer. When cleaning the wafer, the wafer is in an upright state and rotates at a high speed, so that the stains on the wafer surface and the cleaning liquid on the surface are thrown out of the wafer under the action of centrifugal force, thus playing a cleaning role. However, during the cleaning process, the cleaning liquid carrying stains that is thrown out will accumulate on the top cover above the wafer, and thus is likely to drip back onto the wafer to contaminate the already clean wafer (i.e., secondary contamination), resulting in poor cleaning effect. Summary of the Utility Model
[0003] Based on this, it is necessary to provide a water baffle, a cleaning device, and a chemical mechanical polishing equipment that can avoid secondary contamination of the wafer and improve the cleaning effect in view of the above problems.
[0004] A water baffle extends longitudinally along an arc trajectory to form a receiving space for accommodating a wafer inside the water baffle, and the radius of the water baffle gradually increases or decreases in the width direction of the water baffle; a plurality of diversion grooves are formed on the inner surface of the water baffle, and each of the diversion grooves extends from one end of the water baffle to the other end of the water baffle.
[0005] In some embodiments, a plurality of ridges are convexly provided on the inner surface of the water baffle 1, and each of the ridges extends from one end of the water baffle to the other end of the water baffle;
[0006] The ridges are arranged at intervals in the width direction of the water baffle to form the diversion grooves between every two adjacent ridges.
[0007] In some embodiments, the cross-sectional shape of each ridge is semi-circular.
[0008] In some embodiments, the distance between every two adjacent ridges is 2 mm to 4 mm.
[0009] In some embodiments, the inclination angle of the water baffle relative to its own axis is 15° to 30°.
[0010] In some of these embodiments, the surface roughness of the inner surface of the water baffle is 1.6 μm - 3.2 μm.
[0011] In some of these embodiments, the hydrophilic contact angle of the inner surface of the water baffle is 50° - 70°.
[0012] A cleaning device includes the water baffle as described in any of the above embodiments.
[0013] A chemical mechanical polishing equipment includes the cleaning device as described in any of the above embodiments.
[0014] In actual use of the above-mentioned water baffle, cleaning device and chemical mechanical polishing equipment, the water baffle is covered above the wafer to be cleaned, that is, at least part of the wafer is accommodated in the accommodation space inside the water baffle and rotates at a high speed. The cleaning liquid carrying stains that is thrown upward by the high-speed rotation of the wafer will splash onto the inner surface of the water baffle (i.e., the surface of the water baffle facing the wafer). Since the water baffle is inclined relative to its own axis, the cleaning liquid splashed onto the inner surface of the water baffle can flow laterally into the diversion groove. And because the water baffle is arc-shaped, the cleaning liquid in the diversion groove can flow along the diversion groove towards both ends of the water baffle, thus avoiding the accumulation of the cleaning liquid carrying stains on the inner surface of the water baffle and dripping onto the wafer, and further avoiding the secondary pollution of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] Figure 1 is a schematic structural diagram of the water baffle in an embodiment of the present application;
[0016] Figure 2 is Figure 1 a schematic structural diagram of the water baffle shown in another perspective;
[0017] Figure 3 is Figure 1 a side view of the water baffle shown. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0018] In order to make the above objects, features and advantages of the present application more obvious and understandable, the following will describe the specific embodiments of the present application in detail with reference to the accompanying drawings. Many specific details are set forth in the following description in order to fully understand the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the connotation of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.
[0019] In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial direction a", "radial direction", "circumferential direction", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present application.
[0020] In addition, the terms "first" and "second" are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In the description of the present application, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise specifically and clearly defined.
[0021] In the present application, unless otherwise clearly specified and defined, the terms such as "mounted", "connected", "joined", "fixed", etc. shall be construed in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the communication inside two elements or the interaction relationship between two elements, unless otherwise clearly defined. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.
[0022] In the present application, unless otherwise clearly specified and defined, the first feature being "on" or "under" the second feature may be that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature being "above", "over" and "on top of" the second feature may be that the first feature is directly above or obliquely above the second feature, or merely indicates that the first feature is at a higher level than the second feature in terms of horizontal height. The first feature being "under", "beneath" and "underneath" the second feature may be that the first feature is directly below or obliquely below the second feature, or merely indicates that the first feature is at a lower level than the second feature in terms of horizontal height.
[0023] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or there can also be an intermediate element. When an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intermediate element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are only for illustrative purposes and do not represent the only implementation.
[0024] The present application provides a chemical mechanical polishing apparatus, including a polishing device and a cleaning device. The polishing device is used for chemically mechanically polishing a wafer, and the cleaning device is used for cleaning the wafer that has completed chemical mechanical polishing to remove stains such as residual polishing liquid, polishing particles and polishing residue particles on the wafer.
[0025] Please refer to Figures 1 to 3 As shown, in an embodiment of the present application, the cleaning device includes a water baffle 10. The water baffle 10 extends longitudinally along an arc trajectory to form a receiving space 11 for receiving a wafer inside the water baffle 10. The radius of the water baffle 10 gradually increases or decreases in the width direction b of the water baffle 10, so that the water baffle 10 is inclined relative to its own axis a. A plurality of flow guiding grooves 12 are formed on the inner surface of the water baffle 10, and each flow guiding groove 12 extends from one end of the water baffle 10 to the other end of the water baffle 10. Optionally, the water baffle 10 extends longitudinally along an arc trajectory and is semicircular.
[0026] In this way, in actual use, the water baffle 10 is sleeved above the wafer to be cleaned, that is, at least part of the wafer is received in the receiving space 11 inside the water baffle 10 and rotates at a high speed. The cleaning liquid carrying stains thrown upward by the high-speed rotation of the wafer will splash onto the inner surface of the water baffle 10 (i.e., the surface of the water baffle 10 facing the wafer). Since the water baffle 10 is inclined relative to its own axis a, the cleaning liquid splashed onto the inner surface of the water baffle 10 can flow laterally into the flow guiding grooves 12. And because the water baffle 10 is arc-shaped, the cleaning liquid in the flow guiding grooves 12 can flow along the flow guiding grooves 12 to both ends of the water baffle 10, thus avoiding the accumulation of the cleaning liquid carrying stains on the inner surface of the water baffle 10 and dripping onto the wafer, and further avoiding secondary contamination of the wafer.
[0027] In an embodiment of the present application, a plurality of ridges 13 are protruded from the inner surface of the water baffle 10, and each ridge 13 extends from one end of the water baffle 10 to the other end of the water baffle 10. Each ridge 13 is arranged at intervals along the width direction b of the water baffle 10 to form a diversion groove 12 between every two adjacent ridges 13. In this way, the cleaning liquid sputtered onto the inner surface of the water baffle 10 during wafer cleaning is trapped in each diversion groove 12 and flows along the diversion groove 12 towards both ends of the water baffle 10, preventing the cleaning liquid from accumulating and dripping.
[0028] Optionally, the cross-sectional shape of each ridge 13 is semi-circular, that is, the surface of the ridge 13 is an arc surface, so that the cleaning liquid sputtered onto the surface of the ridge 13 can flow along the surface of the ridge 13 into the diversion groove 12 and then flow along the diversion groove 12 towards both ends of the water baffle 10. Preferably, the diameter of each ridge 13 is 2 mm - 4 mm, so that the surface radian of the ridge 13 is appropriate, ensuring that the cleaning liquid sputtered onto the surface of the ridge 13 can smoothly flow into the diversion groove 12 and then along the diversion groove 12 towards both ends of the water baffle 10, preventing the cleaning liquid from accumulating and dripping onto the wafer. For example, the diameter of each ridge 13 is 2 mm, 3 mm or 4 mm, etc. The diameters of the ridges 13 can be the same or different, which is not limited herein.
[0029] Furthermore, the distance between every two adjacent ridges 13 is 2 mm - 4 mm, so that the width of the diversion groove 12 between every two adjacent ridges 13 is appropriate, ensuring that the cleaning liquid entering the diversion groove 12 can smoothly flow towards both ends of the water baffle 10, preventing the cleaning liquid from accumulating in the diversion groove 12 and dripping onto the wafer. Preferably, the distance between every two adjacent ridges 13 is 2 mm, 3 mm or 4 mm, etc. The distances between every two adjacent ridges 13 can be the same or different, which is not limited herein.
[0030] It should be noted that since the radius of the water baffle 10 gradually increases or decreases in the width direction b of the water baffle 10, the water baffle 10 is inclined relative to its own axial direction a (see Figure 3)。The inclination angle T of the water baffle 10 relative to its own axial direction a should neither be too large nor too small. When the inclination angle T is too large, the cleaning liquid in the diversion groove 12 will flow to the surface of the rib 13; when the inclination angle T is too small, the cleaning liquid on the surface of the rib 13 will not flow to the diversion groove 12, both of which will cause the cleaning liquid to accumulate and drip on the surface of the rib 13, thereby causing secondary contamination of the wafer. To avoid the above defects, in the embodiments of the present application, the inclination angle T of the water baffle 10 relative to its own axial direction a is 15° to 30°, so as to ensure that the cleaning liquid on the surface of the rib 13 can smoothly flow to the diversion groove 12, and the cleaning liquid in the diversion groove 12 will not flow to the surface of the rib 13, ensuring that the cleaning liquid flows along the diversion groove 12 to both ends of the water baffle 10. Preferably, the included angle between the water baffle 10 and the axial direction a of the water baffle 10 is 15°, 18°, 21°, 24°, 27° or 30°, etc.
[0031] Specifically in the embodiment, the surface roughness of the inner surface of the water baffle 10 is 1.6 μm - 3.2 μm, which is beneficial to the cleaning liquid sputtered onto the inner surface of the water baffle 10 to flow into the diversion groove 12 and flow along the diversion groove 12 to both ends of the water baffle 10, avoiding the blockage of the cleaning liquid flowing into the diversion groove 12 or flowing along the diversion groove 12 to both ends of the water baffle 10 due to the overly rough inner surface of the water baffle 10. Preferably, the surface roughness of the inner surface of the water baffle 10 can be 1.6 μm, 1.8 μm, 2.0 μm, 2.2 μm, 2.4 μm, 2.6 μm, 2.8 μm, 3.0 μm or 3.2 μm, etc.
[0032] It should be noted that the hydrophilic contact angle of the inner surface of the water baffle 10 should neither be too large nor too small. When the hydrophilic contact angle is too large, the cleaning liquid does not wet the inner surface of the water baffle 10 and is likely to form water droplets and drip; when the hydrophilic contact angle is too small, the cleaning liquid will adsorb on the inner surface of the water baffle 10, which is not conducive to drainage. To overcome the above defects, in the embodiments of the present application, the hydrophilic contact angle of the inner surface of the water baffle 10 is 50° - 70°, so as to both avoid the cleaning liquid on the inner surface of the water baffle 10 from forming water droplets and dripping, and be beneficial to the cleaning liquid on the inner surface of the water baffle 10 to flow along the diversion groove 12 to both ends of the water baffle 10, that is, it is beneficial to drainage. Preferably, the hydrophilic contact angle of the inner surface of the water baffle 10 is 50°, 55°, 60°, 65° or 70°, etc.
[0033] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of concise description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered to be within the scope described in this specification.
[0034] The above-described embodiments merely represent several implementation manners of the present application. The description thereof is relatively specific and detailed, but it should not be construed as a limitation on the scope of the patent application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all fall within the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the appended claims.
Claims
1. A water baffle, characterized in that, The water baffle (10) extends longitudinally along an arc trajectory to form a receiving space (11) for receiving wafers inside the water baffle (10); in the width direction (b) of the water baffle (10), the radius of the water baffle (10) gradually increases or decreases; A plurality of diversion grooves (12) are formed on the inner surface of the water baffle (10), and each of the diversion grooves (12) extends from one end of the water baffle (10) to the other end of the water baffle (10).
2. The water baffle according to claim 1, characterized in that, A plurality of ridges (13) protrude from the inner surface of the water baffle (10), and each of the ridges (13) extends from one end of the water baffle (10) to the other end of the water baffle (10); The ridges (13) are arranged at intervals in the width direction (b) of the water baffle (10) to form the diversion grooves (12) between every two adjacent ridges (13).
3. The water baffle according to claim 2, wherein, The cross-sectional shape of each ridge (13) is semi-circular.
4. The water baffle according to claim 2, wherein The distance between every two adjacent ridges (13) is 2 mm to 4 mm.
5. The water baffle according to claim 1, characterized in that, The inclination angle of the water baffle (10) relative to its own axis is 15° to 30°.
6. The water baffle according to claim 1, wherein, The surface roughness of the inner surface of the water baffle (10) is 1.6 μm - 3.2 μm.
7. The water baffle according to claim 1, wherein The hydrophilic contact angle of the inner surface of the water baffle (10) is 50° - 70°.
8. A cleaning device, characterized in that, Comprising the water baffle (10) according to any one of claims 1 to 7.
9. A chemical mechanical polishing apparatus, characterized in that, Comprising the cleaning device according to claim 8.