Exhaust structure of semiconductor equipment

Abstract

The utility model discloses an exhaust structure of semiconductor equipment. The exhaust structure is matched with the reaction cavity, and the exhaust structure comprises an exhaust passage I, an exhaust passage II, a PLC (Programmable Logic Controller) and a pressure gauge. The exhaust passage I comprises a tail gas washing device, an exhaust pipe I for communicating the reaction cavity with the tail gas washing device, and an on-off valve I and a pressure release valve which are arranged on the exhaust pipe I. The exhaust passage II comprises a dry pump, a tail gas treatment device, an exhaust pipe II for communicating the reaction cavity, the dry pump and the tail gas treatment device, and an on-off valve II and a pressure control regulating valve which are arranged on the exhaust pipe II. And when the thick film is deposited, the exhaust passage I is opened, and the exhaust passage II is kept closed. And when the thin film is deposited, the exhaust passage I is kept closed, and the exhaust passage II is opened. The device has a normal pressure working mode and a reduced pressure working mode, the two working modes can be conveniently switched to realize thick film deposition / thin film deposition production of a semiconductor wafer, and the device can be flexibly applied to semiconductor processing with different process requirements.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, and particularly to an exhaust structure of a semiconductor device. Background Art

[0002] When a semiconductor processing device performs a chemical vapor deposition process on a semiconductor wafer, process gases need to be continuously introduced into the reaction chamber. In order to maintain a reaction environment that meets the process requirements and prevent the pressure in the reaction chamber from being too high, the exhaust gas (including reaction by-products and unreacted reaction gases, etc.) generated during the process needs to be directed out through an exhaust pipeline for tail gas treatment.

[0003] Usually, a semiconductor processing device only has one exhaust path and cannot be targeted at different production processes or procedures, resulting in poor versatility of the device and limited scope of use. Summary of the Utility Model

[0004] In view of the above-mentioned disadvantages of the prior art, the purpose of the present utility model is to provide an exhaust structure of a semiconductor device to achieve thick film deposition / thin film deposition production of semiconductor wafers and meet semiconductor processing with different process requirements.

[0005] An exhaust structure of a semiconductor device is cooperatively arranged with a reaction chamber;

[0006] The exhaust structure includes:

[0007] Exhaust path I, which includes a tail gas water washing device, an exhaust pipe I for connecting the reaction chamber and the tail gas water washing device, a on-off valve I and a pressure relief valve installed on the exhaust pipe I; and

[0008] Exhaust path II, which includes a dry pump, a tail gas treatment device, an exhaust pipe II for connecting the reaction chamber, the dry pump and the tail gas treatment device, a on-off valve II and a pressure control regulating valve installed on the exhaust pipe II.

[0009] In one embodiment, the on-off valve I is located between the pressure relief valve and the reaction chamber.

[0010] In one embodiment, the dry pump is located between the tail gas treatment device and the pressure control regulating valve, and the on-off valve II is located between the pressure control regulating valve and the reaction chamber.

[0011] In one embodiment, when depositing a thick film, exhaust path I is opened and exhaust path II remains closed; when depositing a thin film, exhaust path I remains closed and exhaust path II is opened.

[0012] In one embodiment, the exhaust structure further includes a PLC and a pressure gauge for detecting the air pressure in the reaction chamber.

[0013] Further, the PLC is installed outside the reaction chamber, and there is an electric wire connected between the pressure gauge and the PLC, and an electric wire is also connected between the pressure control regulating valve and the PLC.

[0014] Compared with the prior art, the beneficial effects of the present utility model are as follows: Two exhaust pipelines are established on the semiconductor device, namely the exhaust passage I and the exhaust passage II. The atmospheric pressure working mode is provided through the exhaust passage I to deposit thick films, and the reduced pressure working mode is provided through the exhaust passage II to deposit thin films. When depositing thick films, the exhaust passage I is opened and the exhaust passage II remains closed. When depositing thin films, the exhaust passage I remains closed and the exhaust passage II is opened. The exhaust passage I and the exhaust passage II cooperate with each other, and the working mode can be conveniently switched to realize the production of thick film deposition / thin film deposition of semiconductor wafers, meeting the semiconductor processing requirements of different processes. Description of the Drawings

[0015] In order to more clearly illustrate the embodiments of the present utility model or the technical solutions in the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings described below are only exemplary, and for those of ordinary skill in the art, without creative efforts, other implementation drawings can also be obtained according to the provided drawings.

[0016] The structures, ratios, sizes, etc. shown in this specification are only used to cooperate with the content disclosed in the specification for those who are familiar with this technology to understand and read, and are not used to limit the limited conditions that the present utility model can be implemented. Therefore, they do not have a substantial technical meaning. Any modification of the structure, change of the proportional relationship, or adjustment of the size, without affecting the effects that the present utility model can produce and the purposes that can be achieved, should still fall within the scope that the technical content disclosed by the present utility model can cover.

[0017] Figure 1 The following shows a schematic structural diagram of an exhaust structure of a semiconductor device provided by the present utility model.

[0018] Main Element Symbol Explanation

[0019] 1. Reaction chamber; 2. On-off valve I; 3. Pressure relief valve; 4. Tail gas water washing device; 5. On-off valve II; 6. Pressure control regulating valve; 7. Dry pump; 8. Tail gas treatment device; 9. Pressure gauge; 10. PLC.

[0020] The above main element symbol explanation further describes the present utility model in detail in combination with the drawings and specific embodiments. Specific Embodiments

[0021] The following specific embodiments illustrate the implementation manners of the present utility model. Those skilled in the art can easily understand other advantages and effects of the present utility model from the content disclosed in this specification. Obviously, the described embodiments are part of the embodiments of the present utility model, rather than all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present utility model.

[0022] Please refer to Figure 1 , this embodiment provides an exhaust structure for a semiconductor device, which is arranged in cooperation with the reaction chamber 1. The exhaust structure includes an exhaust passage I, an exhaust passage II, a PLC 10, and a pressure gauge 9 for detecting the air pressure in the reaction chamber 1.

[0023] The exhaust passage I includes a tail gas water washing device 4, an exhaust pipe I for connecting the reaction chamber 1 and the tail gas water washing device 4, an on-off valve I 2 and a pressure relief valve 3 installed on the exhaust pipe I. The on-off valve I 2 is located between the pressure relief valve 3 and the reaction chamber 1. In this embodiment, the reaction chamber 1 - on-off valve I 2 - pressure relief valve 3 - tail gas water washing device 4 are connected in series in sequence to form the exhaust passage I. The atmospheric pressure working mode is established by using the exhaust passage I for depositing thick films. In order to avoid the situation that excessive deposits cause too high pressure in the exhaust passage I when plating thick films, when the pressure in the reaction chamber 1 or the exhaust pipe I exceeds the set pressure of the pressure relief valve 3, the pressure relief is automatically started to ensure that the medium pressure in the reaction chamber 1 and the exhaust pipe I is below the set pressure, protecting the reaction chamber 1 and the exhaust pipe I and preventing accidents.

[0024] The exhaust passage II includes a dry pump 7, a tail gas treatment device 8, an exhaust pipe II for connecting the reaction chamber 1, the dry pump 7 and the tail gas treatment device 8, an on-off valve II 5 and a pressure control regulating valve 6 installed on the exhaust pipe II. The dry pump 7 is located between the tail gas treatment device 8 and the pressure control regulating valve 6, and the on-off valve II 5 is located between the pressure control regulating valve 6 and the reaction chamber 1. The PLC 10 is installed outside the reaction chamber 1, and there is an electric wire connected between the pressure gauge 9 and the PLC 10, and an electric wire is connected between the pressure control regulating valve 6 and the PLC 10. In this embodiment, the reaction chamber 1 - on-off valve II 5 - pressure control regulating valve 6 - dry pump 7 - tail gas treatment device 8 are connected in series in sequence to form the exhaust passage II. The reduced pressure working mode is established by using the exhaust passage II for depositing thin films. The pressure control regulating valve 6 drives the valve to change the cross-sectional area between the valve core and the valve seat to control the pipeline pressure by receiving the signal from the PLC 10, so as to achieve the purpose of stabilizing the air pressure.

[0025] When performing the chemical vapor deposition process on a semiconductor wafer, it is necessary to continuously introduce process gases into the reaction chamber 1. In order to maintain a reaction environment that meets the process requirements and prevent the pressure in the reaction chamber 1 from being too high, it is necessary to direct the exhaust gas (including reaction by-products and unreacted reaction gases, etc.) generated during the process through the exhaust pipeline for tail gas treatment. The exhaust structure of this embodiment has established two exhaust pipelines on the semiconductor device, namely the exhaust passage I and the exhaust passage II. The atmospheric pressure working mode is provided through the exhaust passage I to deposit thick films, and the reduced pressure working mode is provided through the exhaust passage II to deposit thin films.

[0026] When depositing thick films, the exhaust passage I is opened and the exhaust passage II is kept closed. When depositing thin films, the exhaust passage I is kept closed and the exhaust passage II is opened. In this embodiment, the exhaust passage I and the exhaust passage II cooperate with each other, and the working mode can be conveniently switched to realize the production of thick film deposition / thin film deposition of semiconductor wafers, meeting the semiconductor processing requirements of different processes.

[0027] In summary, the exhaust structure of this embodiment has the following advantages: it has two working modes of atmospheric pressure and reduced pressure, and the two working modes can be conveniently switched to realize the production of thick film deposition / thin film deposition of semiconductor wafers, and can be flexibly applied to semiconductor processing with different process requirements, and has excellent promotion prospects.

[0028] For the naming of each component involved, the function described in the specification is used as the naming standard, and is not limited by the specific nouns used in the present invention. Those skilled in the art can also choose other nouns to describe the names of the components of the present invention.

Claims

1. A semiconductor device exhaust structure, which is arranged in cooperation with a reaction chamber (1); It is characterized in that The exhaust structure includes: Exhaust passage I, which includes a tail gas water washing device (4), an exhaust pipe I for connecting the reaction chamber (1) and the tail gas water washing device (4), an on-off valve I (2) and a pressure relief valve (3) installed on the exhaust pipe I; and Exhaust passage II, which includes a dry pump (7), a tail gas treatment device (8), an exhaust pipe II for connecting the reaction chamber (1), the dry pump (7) and the tail gas treatment device (8), an on-off valve II (5) and a pressure control regulating valve (6) installed on the exhaust pipe II.

2. The exhaust structure of a semiconductor device according to claim 1, characterized in that, The on-off valve I (2) is located between the pressure relief valve (3) and the reaction chamber (1).

3. The exhaust structure of a semiconductor device according to claim 1, wherein, The dry pump (7) is located between the tail gas treatment device (8) and the pressure control regulating valve (6), and the on-off valve II (5) is located between the pressure control regulating valve (6) and the reaction chamber (1).

4. A semiconductor device exhaust structure according to claim 1, characterized in that, When depositing a thick film, exhaust passage I is opened, and exhaust passage II remains closed; When depositing a thin film, exhaust passage I remains closed, and exhaust passage II is opened.

5. A semiconductor device exhaust structure according to claim 1, characterized in that, The exhaust structure further includes a PLC (10) and a pressure gauge (9) for detecting the air pressure in the reaction chamber (1).

6. The exhaust structure of a semiconductor device according to claim 5, characterized in that, The PLC (10) is installed outside the reaction chamber (1), and there is an electric wire connected between the pressure gauge (9) and the PLC (10), and there is an electric wire connected between the pressure control regulating valve (6) and the PLC (10).

Images