Crystal growth equipment

Abstract

The utility model discloses crystal growth equipment, which comprises a furnace body, a first auxiliary chamber, a second auxiliary chamber, a support assembly and a feeding assembly, a seed crystal rotating and lifting structure is arranged on the first auxiliary chamber, and the support assembly comprises a support main body, a first rotating and lifting structure and a second rotating and lifting structure. The first rotary lifting structure and the second rotary lifting structure are both arranged on the support body, the first rotary lifting structure is used for driving the first auxiliary chamber to ascend and descend and rotate around a first vertical axis, and the second rotary lifting structure is used for driving the second auxiliary chamber to ascend and descend and rotate around a second vertical axis, so that the first auxiliary chamber and the second auxiliary chamber are in butt joint with the furnace body in a replaceable mode. The feeding assembly comprises a stock bin and a feeding structure, the stock bin and the feeding structure are arranged in the second auxiliary chamber and located outside the second auxiliary chamber, and the feeding structure is used for horizontally conveying materials in the stock bin to the second auxiliary chamber. Therefore, the crystal growth equipment provided by the embodiment of the utility model has relatively high production efficiency, and the feeding process has good controllability and stability.

Description

Technical Field

[0001] The utility model relates to the technical field of crystal growth, in particular to a crystal growth device. Background Art

[0002] A single crystal furnace is a production device for producing single crystal silicon used in solar cell wafers. Its operation process is usually: loading, evacuation, melting, seeding, necking, diameter equalization, tailing, and furnace shutdown. In its production process, under vacuum argon, after filling solid silicon raw materials in a quartz crucible, the silicon materials are melted by heating, and a single crystal is manufactured by the rotation of the seed crystal and the tension between the liquids and lifting upward.

[0003] One of the key factors restricting the improvement of the production efficiency of the single crystal furnace is the maximum feeding amount of a single crystal pulling. In view of this problem, the main technical means adopted in the related art is secondary feeding. Secondary feeding is to first add silicon materials of a specified specification into a quartz feeder, and then put them into the single crystal furnace through the quartz feeder to add a certain amount of silicon materials into the single crystal furnace, so as to directly and effectively increase the average feeding amount of the single crystal furnace. Among them, during the feeding process, the lifting of the secondary feeding quartz tube is required, and the quartz tube is installed on the lifting device at the top of the single crystal furnace through a quartz flange. The quartz flange is used for the fixation and load-bearing of the entire secondary feeding device. However, the structure of the quartz flange is simple and its strength is low, and it is easily damaged by the force at the position where the fixing bolts are inserted through the holes. In addition, during the secondary feeding process, the lifting rod of the quartz feeder moves downward to discharge the materials inside the feeding cylinder for feeding. However, during the feeding process, it is not possible to well control the maximum opening at the bottom end of the feeding cylinder for feeding adjustment, and metal debris will fall into the crucible during the lifting and discharging process of the feeding cylinder, thus affecting the quality of the crystal bar, such as the resistivity.

[0004] It can be seen that in the above feeding method, the single feeding amount is small, multiple feedings are required, and the feeding time is long, resulting in low production efficiency and easily affecting the quality of the crystal bar. Summary of the Utility Model

[0005] The utility model aims to solve at least one of the technical problems existing in the prior art. For this reason, the utility model provides a crystal growth device, which has high production efficiency, and the feeding process has good controllability and stability.

[0006] A crystal growth device according to an embodiment of the present invention includes: a furnace body, a crystal growth chamber is defined within the furnace body; a first auxiliary chamber and a second auxiliary chamber, docking ports adapted to be docked with the furnace body are respectively formed at the lower ends of the first auxiliary chamber and the second auxiliary chamber, and a seed crystal rotation and lifting structure is provided on the first auxiliary chamber; a support assembly, the support assembly includes a support main body, a first rotation and lifting structure and a second rotation and lifting structure, the first rotation and lifting structure and the second rotation and lifting structure are both provided on the support main body, the first rotation and lifting structure is used to drive the first auxiliary chamber to lift and rotate around a first vertical axis, and the second rotation and lifting is used to drive the second auxiliary chamber to lift and rotate around a second vertical axis, so that the first auxiliary chamber and the second auxiliary chamber can be replaceably docked with the furnace body; a feeding assembly, the feeding assembly includes a material bin and a feeding structure, the material bin and the feeding structure are provided in the second auxiliary chamber and both are located outside the second auxiliary chamber, and the feeding structure is used to horizontally convey the material in the material bin to the second auxiliary chamber.

[0007] The crystal growth device according to an embodiment of the present invention, by providing that the first auxiliary chamber and the second auxiliary chamber can be replaceably docked with the furnace body, and a seed crystal rotation and lifting structure is provided on the first auxiliary chamber, and a material bin and a feeding structure are provided on the second auxiliary chamber, so that the first auxiliary chamber realizes crystal growth and crystal pulling, and the second auxiliary chamber realizes feeding, which is convenient for using the crystal growth stage to carry out feeding preparation work in advance, and is beneficial to improving production efficiency; at the same time, the material bin and the feeding structure are both located outside the second auxiliary chamber, which is beneficial to breaking the limitation of the single feeding amount of the second auxiliary chamber and the furnace body, effectively reducing the number of feedings, further saving feeding time, improving production efficiency, and facilitating the realization that the whole feeding process does not contact the outside world, which is beneficial to reducing the risk of material contamination during feeding, and is convenient for improving crystal quality and crystal formation rate; moreover, the feeding structure is used to horizontally convey the material in the material bin to the second auxiliary chamber, which can realize the controllability of the feeding amount per unit time and the controllability of the feeding speed, and improve the controllability and stability of the feeding process.

[0008] In some embodiments, at least a part of the material bin is detachably fitted with the second auxiliary chamber.

[0009] In some embodiments, the material bin includes a stock bin, a feeding bin and a first isolation valve, the stock bin is provided above the feeding bin and is detachably arranged relative to the second auxiliary chamber, the first isolation valve is provided between the stock bin and the feeding bin and is used to control the on-off between the stock bin and the feeding bin, and the feeding structure is used to convey the material in the feeding bin to the second auxiliary chamber.

[0010] In some embodiments, a vacuum pumping port is formed on the stock bin, and a vacuum pumping port is formed on the second auxiliary chamber and / or the furnace body.

[0011] In some embodiments, the feeding structure includes: a feeding cylinder disposed at the bottom inside the material bin or at the bottom side outside the material bin, and the feeding cylinder is respectively communicated with the material bin and the second auxiliary chamber; a conveying screw disposed in the feeding cylinder; and a driver for driving the conveying screw to rotate.

[0012] In some embodiments, the furnace body includes a furnace body, a furnace cover and a furnace bottom. The furnace cover is detachably disposed on the top side of the furnace body, the furnace bottom is detachably disposed on the bottom side of the furnace body, a crucible is disposed inside the furnace body, and the support assembly further includes a third rotation and lifting structure. The second rotation and lifting structure is disposed on the support main body and is used for driving the furnace body to lift and rotate around a third vertical axis.

[0013] In some embodiments, the feeding assembly further includes a feeding pipe which is liftably disposed in the second auxiliary chamber and has a first position and a second position. In the first position, the feeding pipe is located inside the second auxiliary chamber and is separated from the feeding structure. In the second position, the lower end of the feeding pipe extends into the crystal growth chamber through the docking port of the second auxiliary chamber and the upper end is docked with the feeding structure; or, the feeding pipe is telescopically disposed in the second auxiliary chamber, and the upper end of the feeding pipe is docked with the feeding structure. The feeding pipe has a first state and a second state. In the first state, the feeding pipe is located inside the second auxiliary chamber. In the second state, the lower end of the feeding pipe extends into the crystal growth chamber through the docking port of the second auxiliary chamber.

[0014] In some embodiments, the feeding pipe is liftably disposed in the second auxiliary chamber, and a second isolation valve is provided at one end of the feeding structure docked with the feeding pipe. The second isolation valve is used to control the on-off between the feeding structure and the feeding pipe. The second isolation valve is configured such that the second isolation valve is normally closed, and the feeding pipe opens the second isolation valve when the feeding pipe moves to the second position.

[0015] In some embodiments, the crystal growth device further includes a crucible disposed inside the crystal growth chamber. When the lower end of the feeding pipe extends into the crystal growth chamber, the lower end of the feeding pipe extends into the crucible.

[0016] In some embodiments, the maximum length of the lower end of the feeding pipe extending into the crucible is 20 mm.

[0017] Additional aspects and advantages of the present utility model will be given in part in the following description, become apparent in part from the following description, or be understood through the practice of the present utility model. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The above and / or additional aspects and advantages of the present utility model will become apparent and be readily understood from the following description of embodiments in conjunction with the accompanying drawings, wherein:

[0019] Figure 1 is a schematic diagram of a crystal growth device according to an embodiment of the present utility model;

[0020] Figure 2 is Figure 1 another schematic diagram of the crystal growth device shown in

[0021] Figure 3 is Figure 2 a cross-sectional view of the second auxiliary chamber and the feeding assembly shown in

[0022] Figure 4 is Figure 3 another cross-sectional view of the second auxiliary chamber and the feeding assembly shown in

[0023] Figure 5 is Figure 3 yet another cross-sectional view of the second auxiliary chamber and the feeding assembly shown in

[0024] Figure 6 is Figure 3 a cross-sectional view of the feeding cylinder and the conveying screw shown in

[0025] Figure 7 is Figure 1 a cross-sectional view of the crystal growth device shown in , where the first auxiliary chamber is docked with the furnace body;

[0026] Figure 8 is Figure 1 another cross-sectional view of the crystal growth device shown in , where the second auxiliary chamber is docked with the furnace body.

[0027] Reference numerals:

[0028] crystal growth device 100,

[0029] furnace body 1, crystal growth chamber 10, furnace body 11, furnace cover 12, furnace bottom 13,

[0030] first auxiliary chamber 2, crystal pulling chamber 20, docking port 2a, seed crystal rotation and lifting structure 21,

[0031] second auxiliary chamber 3,

[0032] support assembly 4, support body 41, first rotation and lifting structure 42, second rotation and lifting structure 43,

[0033] feeding assembly 5,

[0034] material bin 51, stock preparation bin 511, feeding bin 512, first isolation valve 513,

[0035] Feeding structure 52, feeding cylinder 521, conveying screw 522, driver 523, feeding pipe 53,

[0036] Second isolation valve 6, crucible 7, driving structure 8, cooling assembly 9. Specific embodiments

[0037] Embodiments of the present invention will be described in detail below. Examples of the embodiments are shown in the drawings, where the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0038] The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and settings of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. In addition, the present invention may repeat reference numerals and / or letters in different examples. Such repetition is for the purpose of simplification and clarity and does not itself indicate the relationship between the various embodiments and / or settings discussed. In addition, the present invention provides examples of various specific processes and materials, but those of ordinary skill in the art can be aware of the applicability of other processes and / or the use of other materials.

[0039] In the description of the embodiments of the present application, the term "and / or" is merely a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. In addition, the character " / " in this article generally represents an "or" relationship between the associated objects before and after.

[0040] Next, referring to the drawings, a crystal growth apparatus 100 according to an embodiment of the present invention will be described. It should be noted that the type of the crystal growth apparatus 100 according to the embodiments of the present application is not limited. For example, it can be a single crystal growth furnace, a polycrystalline silicon growth furnace, a sapphire growth furnace, a silicon carbide growth furnace, etc. In the following description of the present application, the crystal growth apparatus 100 is taken as a single crystal furnace as an example for illustration, and those skilled in the art can easily understand the implementation of the crystal growth apparatus 100 as other types after reading the following description.

[0041] As Figure 1 、 Figure 2 、 Figure 7 and Figure 8As shown, the crystal growth device 100 includes a furnace body 1 and a first auxiliary chamber 2. A crystal growth chamber 10 is defined within the furnace body 1. The lower end of the first auxiliary chamber 2 is formed with a docking port 2a adapted to dock with the furnace body 1. The first auxiliary chamber 2 is provided with a seed crystal rotation and lifting structure 21, which can be used to drive the seed crystal to lift and rotate. A crystal pulling chamber 20 can be defined within the first auxiliary chamber 2. When the first auxiliary chamber 2 is docked with the furnace body 1, the crystal pulling chamber 20 within the first auxiliary chamber 2 can communicate with the crystal growth chamber 10 within the furnace body 1 through the docking port 2a. At this time, crystal growth and crystal pulling can be achieved.

[0042] The crystal growth device 100 further includes a second auxiliary chamber 3. The lower end of the second auxiliary chamber 3 is formed with a docking port 2a adapted to dock with the furnace body 1. When the second auxiliary chamber 3 is docked with the furnace body 1, the internal space of the second auxiliary chamber 3 can communicate with the crystal growth chamber 10 within the furnace body 1 through the docking port 2a.

[0043] As Figure 1 and Figure 2 As shown, the crystal growth device 100 further includes a support assembly 4. The support assembly 4 includes a support body 41, a first rotation and lifting structure 42, and a second rotation and lifting structure 43. The first rotation and lifting structure 42 and the second rotation and lifting structure 43 are both provided on the support body 41. The first rotation and lifting structure 42 is used to drive the first auxiliary chamber 2 to lift and to drive the first auxiliary chamber 2 to rotate about a first vertical axis, so that the first auxiliary chamber 2 moves between a first docking position where it is docked with the furnace body 1 and a first separation position where it is separated from the furnace body 1. The second rotation and lifting structure 43 is used to drive the second auxiliary chamber 3 to lift and to drive the second auxiliary chamber 3 to rotate about a second vertical axis, so that the second auxiliary chamber 3 moves between a second docking position where it is docked with the furnace body 1 and a second separation position where it is separated from the furnace body 1.

[0044] It can be seen that the arrangement of the first rotation and lifting structure 42 and the second rotation and lifting structure 43 enables the first auxiliary chamber 2 and the second auxiliary chamber 3 to be alternatively docked with the furnace body 1. When one of the first auxiliary chamber 2 and the second auxiliary chamber 3 is docked with the furnace body 1, the other is separated from the furnace body 1. For example, when the first auxiliary chamber 2 is in the first docking position, the second auxiliary chamber 3 is in the second separation position, and when the second auxiliary chamber 3 is in the second docking position, the second auxiliary chamber 3 is in the first separation position. The structure of the support body 41 is not specifically limited in this application. For example, the support body 41 can be a columnar structure, but is not limited thereto.

[0045] It can be understood that the first vertical axis and the second vertical axis can be arranged in parallel or coincide. The radius of rotation of the first auxiliary chamber 2 about the first vertical axis and the radius of rotation of the second auxiliary chamber 3 about the second vertical axis can be equal or unequal. Exemplarily, as Figure 1 and Figure 2As shown, the bracket body 41 is a columnar structure. The first rotary lifting structure 42 can drive the first auxiliary chamber 2 to rotate around the central axis of the bracket body 41, and the second rotary lifting structure 43 can drive the second auxiliary chamber 3 to rotate around the central axis of the bracket body 41. At this time, the rotation radii of the first auxiliary chamber 2 and the second auxiliary chamber 3 are equal, which is convenient for making the structure of the crystal growth device 100 compact, saving the occupied space, and enabling the first auxiliary chamber 2 and the second auxiliary chamber 3 to be replaceably matched with the furnace body 1.

[0046] As Figures 1-4 shown, the crystal growth device 100 further includes a feeding assembly 5. The feeding assembly 5 includes a material bin 51 and a feeding structure 52. The material bin 51 and the feeding structure 52 are arranged in the second auxiliary chamber 3. Then, when the second rotary lifting structure 43 drives the second auxiliary chamber 3 to move, it can also indirectly drive the feeding assembly 5 to move together with the second auxiliary chamber 3 through the second auxiliary chamber 3. Among them, the feeding structure 52 is used to convey the material in the material bin 51 to the second auxiliary chamber 3. For example, the material bin 51 is fixedly connected to the second auxiliary chamber 3, and the application does not specifically limit the connection manner between the material bin 51 and the second auxiliary chamber 3.

[0047] It can be seen that when the first auxiliary chamber 2 is docked with the furnace body 1, the cooperation between the furnace body 1 and the first auxiliary chamber 2 can realize the growth and pulling of crystals; when the second auxiliary chamber 3 is docked with the furnace body 1, the feeding structure 52 can convey the material in the material bin 51 to the crystal growth chamber 10 through the second auxiliary chamber 3. For example, the feeding structure 52 can directly or indirectly convey the material in the material bin 51 to the crucible 7 in the crystal growth chamber 10 to realize feeding (such as secondary feeding, etc.). Thus, the feeding process realized by the second auxiliary chamber 3 and the crystal growth process realized by the first auxiliary chamber 2 are somewhat independent of each other, which is convenient for the second auxiliary chamber 3 and the feeding assembly 5 to start the feeding preparation work earlier, so as to synchronize the feeding preparation work during the crystal growth process. For example, the feeding preparation work is carried out at the end stage of the crystal growth process, which is beneficial to shortening the feeding waiting time. The feeding preparation time does not occupy the overall operation time. Compared with some technologies where a single auxiliary chamber needs to realize both crystal growth and feeding, the above settings in the embodiments of the present application can improve production efficiency.

[0048] Among them, both the silo 51 and the feeding structure 52 are located outside the second auxiliary chamber 3. Therefore, the process of feeding materials into the silo 51 is less affected by the second auxiliary chamber 3 and the furnace body 1. Moreover, the volume and capacity of the silo 51 are not easily restricted by the internal space of the second auxiliary chamber 3 and the furnace body 1, which is conducive to breaking through the limitation of the single feeding amount by the second auxiliary chamber 3 and the furnace body 1, effectively reducing the number of feeding times, further saving the feeding time, and improving the production efficiency. During the feeding process, there is no need to move and switch components inside and outside the second auxiliary chamber 3 or inside and outside the furnace body 1. The silo 51 and the feeding structure 52 can always be located outside the second auxiliary chamber 3, which is convenient for the second auxiliary chamber 3 and the furnace body 1 to be in a fully sealed state during the charging and melting processes, and it is also convenient to ensure that the materials do not come into contact with the outside world during the entire feeding process, which is conducive to reducing the risk of material contamination (such as metal contamination) during the feeding process, improving the cleanliness of the silicon materials, and thus being conducive to improving the crystal quality and crystal formation rate. In addition, it also facilitates the maintenance of the silo 51 and the feeding structure 52.

[0049] The feeding structure 52 is used to horizontally convey the materials in the silo 51 to the second auxiliary chamber 3, so that the materials in the silo 51 can be conveyed to the second auxiliary chamber 3 in the horizontal direction under the drive of the feeding structure 52. This is conducive to reducing the influence of gravity on the flow rate of the materials during the process of conveying the materials from the silo 51 to the second auxiliary chamber 3. In other words, the feeding structure 52 conveys the materials in the horizontal direction, which can achieve controllability of the feeding amount per unit time and controllability of the feeding speed, so that the materials are not added under the action of gravity during the process of adding the materials from the silo 51 to the second auxiliary chamber 3, or the materials are not only added under the action of gravity during the process of adding the materials from the silo 51 to the second auxiliary chamber 3. This can avoid adding all the required materials at once (if there is liquid in the crucible 7, the embodiments of the present application can reduce the risk of liquid splashing during the feeding process), thereby improving the controllability and stability of the feeding process.

[0050] In the embodiments of the present application, the feeding structure 52 for horizontally conveying the materials in the silo 51 to the second auxiliary chamber 3 may include: the feeding structure 52 conveys the materials in an absolutely horizontal direction; the feeding structure 52 conveys the materials in a direction at a certain angle to the horizontal direction (for example, the angle ≤ 20°, but not limited to this), for example, the feeding structure 52 conveys the materials to the second auxiliary chamber 3 in an inclined direction upward relative to the horizontal direction or the feeding structure 52 conveys the materials to the second auxiliary chamber 3 in an inclined direction downward relative to the horizontal direction.

[0051] In some technologies, the secondary feeding device is placed inside the furnace body 1 for feeding. Due to the design of the furnace body 1 itself and the limited top opening, the volume of the secondary feeding device will be restricted, resulting in a limited volume of the secondary feeding device. Then the single feeding amount is small, leading to an increase in the number of feedings and an extension of the feeding time. In some technologies, the feeding time has accounted for more than 15% of the crystal pulling time, affecting the production efficiency, increasing the operator's workload, and moreover, impurities will be introduced during the multiple feeding processes, reducing the minority carrier lifetime of the single crystal by more than 20% and affecting the crystal quality.

[0052] The following solutions are provided in the related technologies: Set up an internal secondary feeding device; First, lift the single crystal rod pulled for the first time into the auxiliary chamber to cool down before feeding; Then, replace the seed crystal with a hook to lift the internal secondary feeding device; Second, after the internal secondary feeding device enters the single crystal furnace, the auxiliary chamber of the single crystal furnace needs to be evacuated and purified, and feeding work can only be carried out after purification. After feeding is completed, the internal secondary feeding device needs to be lifted into the auxiliary chamber to cool down, and the internal secondary feeding tooling can be taken out only when the temperature drops to near room temperature, and then the seed crystal is replaced.

[0053] Obviously, the above solutions still have the following problems: ① The secondary feeding device has great limitations on the silicon material type and the single feeding amount, resulting in a large number of feedings and a long feeding time; ② The procurement cost of the secondary feeding device made of quartz is high and it is easy to be damaged; If a secondary feeding device made of metal material is selected, metal chips will fall into the crystal rod during the feeding process, which has a great impact on the crystal rod life; ③ Splashing is likely to occur during secondary feeding, which has an important impact on the crystal formation rate and crystal rod quality of crystal pulling.

[0054] It can be seen that the embodiment of the present application is more scientific and reasonable compared with the above technologies. The above feeding method usually drops the feeding device into the furnace body 1 and then adds all the materials in a short time, which will cause the temperature of the silicon liquid to drop rapidly, resulting in a slow melting time, and even cause the liquid surface to crystallize due to excessive temperature drop. In the embodiment of the present application, it is convenient to finish adding the required materials with fewer times. For example, it is possible to finish adding the required materials at one time without batch loading and feeding. For example, 4 - 5 hours can be saved, and it is also convenient to control the feeding speed of the materials, which can improve problems such as liquid splashing and slow melting time caused by excessive feeding amount per unit time, so as to control the feeding rate to quickly feed under the condition of ensuring the maximum melting efficiency, thereby realizing efficient and rapid feeding in production.

[0055] In addition, in the embodiments of the present application, the material bin 51 and the feeding structure 52 are both located outside the second auxiliary chamber 3, indicating that the material bin 51 and the feeding structure 52 are also both located outside the furnace body 1. During the entire feeding process, the material bin 51 and the feeding structure 52 are both located outside the second auxiliary chamber 3 and the furnace body 1. Then, the material bin 51 and the feeding structure 52 are far from the thermal field structure inside the furnace body 1, and the influence of the temperature of the thermal field structure (for example, the thermal field structure includes a heating structure for heating the crucible 7) on the material bin 51 and the feeding structure 52 is small, which is beneficial to reducing the requirements for the material selection of the material bin 51 and the feeding structure 52, and is also beneficial to improving the feeding reliability of the feeding structure 52.

[0056] For example, the first auxiliary chamber 2 performs the normal pulling work of the single crystal rod. The second auxiliary chamber 3 can load all the silicon materials required for subsequent crystal pulling in the material bin 51 when the crystal rod is about to be pulled to the end. Since the feeding assembly 5 is connected to the second auxiliary chamber 3, after the pulled crystal rod is taken out, the first auxiliary chamber 2 can be rotated to be separated from the furnace body 1 and the second auxiliary chamber 3 can be rotated to be docked with the furnace body 1, and the silicon material is conveyed through the feeding structure 52 and added to the crucible 7 in the crystal growth chamber 10 through the second auxiliary chamber 3.

[0057] According to the crystal growth device 100 of the embodiment of the present utility model, by setting the first auxiliary chamber 2 and the second auxiliary chamber 3 to be alternatively docked with the furnace body 1, and the first auxiliary chamber 2 is provided with a seed crystal rotation and lifting structure 21, and the second auxiliary chamber 3 is provided with a material bin 51 and a feeding structure 52, so that the first auxiliary chamber 2 realizes crystal growth and crystal pulling, and the second auxiliary chamber 3 realizes feeding, which is convenient for using the crystal growth stage to advance the feeding preparation work, and is beneficial to improving the production efficiency; at the same time, the material bin 51 and the feeding structure 52 are both located outside the second auxiliary chamber 3, which is beneficial to breaking the limitation of the second auxiliary chamber 3 and the furnace body 1 on the single feeding amount, effectively reducing the feeding times, further saving the feeding time, improving the production efficiency, and facilitating the realization that the materials do not contact the outside world during the whole feeding process, which is beneficial to reducing the risk of material contamination (such as metal contamination) during the feeding process, and facilitating the improvement of crystal quality and crystal formation rate; moreover, the feeding structure 52 is used to horizontally convey the materials in the material bin 51 to the second auxiliary chamber 3, which can realize the controllability of the feeding amount per unit time and the controllability of the feeding speed, and improve the controllability and stability of the feeding process.

[0058] It can be understood that the movement of the first auxiliary chamber 2 driven by the first rotation and lifting structure 42 and the movement of the second auxiliary chamber 3 driven by the second rotation and lifting structure 43 can be realized by manual driving of the operator or by electric driving.

[0059] Optionally, the structures of both the first rotary lifting structure 42 and the second rotary lifting structure 43 are the same; taking the first rotary lifting structure 42 as an example, the first rotary lifting structure 42 may include a rotary mechanism and a lifting mechanism. The lifting mechanism (such as a hydraulic lifting mechanism) can directly drive the first auxiliary chamber 2 to move up and down, and the rotary mechanism can indirectly drive the first auxiliary chamber 2 to rotate through the lifting mechanism. Alternatively, the rotary mechanism directly drives the first auxiliary chamber 2 to rotate, and the lifting mechanism indirectly drives the first auxiliary chamber 2 to move up and down through the rotary structure.

[0060] In some embodiments, as Figures 1-3 shown, at least part of the silo 51 is detachably engaged with the second auxiliary chamber 3, facilitating the implementation of the split design of at least part of the silo 51 and the second auxiliary chamber 3, and further facilitating the maintenance, replacement, etc. of the silo 51 and the second auxiliary chamber 3.

[0061] In some embodiments, as Figures 1-3 shown, the silo 51 includes a stockpiling silo 511, a feeding silo 512, and a first isolation valve 513. The stockpiling silo 511 is provided above the feeding silo 512, and the stockpiling silo 511 is detachably arranged relative to the second auxiliary chamber 3. The first isolation valve 513 is arranged between the stockpiling silo 511 and the feeding silo 512, and the first isolation valve 513 is used to control the on-off between the stockpiling silo 511 and the feeding silo 512. When the first isolation valve 513 is opened, the stockpiling silo 511 is communicated with the feeding silo 512, and the materials in the stockpiling silo 511 can flow to the feeding silo 512 under the action of gravity, etc. When the first isolation valve 513 is closed, the stockpiling silo 511 is not communicated with the feeding silo 512, and the materials in the stockpiling layer cannot flow to the feeding silo 512; the feeding structure 52 is used to convey the materials in the feeding silo 512 to the second auxiliary chamber 3.

[0062] Among them, the stockpiling silo 511 is detachably arranged relative to the second auxiliary chamber 3. It can be understood that if at least one of the feeding silo 512, the first isolation valve 513, and the second auxiliary chamber 3 is connected to the stockpiling silo 511, then the above at least one of the feeding silo 512, the first isolation valve 513, and the second auxiliary chamber 3 is detachably connected to the stockpiling silo 511, so that the stockpiling silo 511 can be detached separately. Thus, during the feeding preparation work, the stockpiling silo 511 can be detached in advance and transferred to a preset position such as a stockpiling room for feeding. Compared with the entire silo 51, the stockpiling silo 511 has a smaller volume and weight, is convenient to transfer, and the stockpiling process will not be affected by the second auxiliary chamber 3 and the furnace body 1, improving the feeding convenience.

[0063] In addition, the setting of the first isolation valve 513 can separate the internal space of the feeding silo 512 from the external environment when the stockpiling silo 511 is detached, ensuring the cleanliness of the internal space of the feeding silo 512 and not easily contaminating the materials.

[0064] In some embodiments, a vacuum extraction port is formed on the stock bin 511. After the stock bin 511 is filled with materials, the stock bin 511 can be evacuated through the vacuum extraction port to seal the internal space of the stock bin 511, ensuring that the materials in the stock bin 511 are not polluted by the external environment. A vacuum extraction port is formed on the second auxiliary chamber 3 and / or the furnace body 1, so as to evacuate the second auxiliary chamber 3 and the furnace body 1 before the material transfer, making the pressure in the second auxiliary chamber 3 the same as the pressure in the stock bin 511.

[0065] In some embodiments, such as Figure 3 , Figure 4 and Figure 6 shown, the feeding structure 52 includes a feeding cylinder 521, a conveying screw 522 and a driver 523. The feeding cylinder 521 is arranged at the bottom inside the material bin 51 or at the bottom side outside the material bin 51, and the feeding cylinder 521 is respectively communicated with the material bin 51 and the second auxiliary chamber 3, that is, the feeding cylinder 521 is communicated with the material bin 51 and the feeding cylinder 521 is also communicated with the second auxiliary chamber 3. Then, the materials in the material bin 51 can flow into the feeding cylinder 521, and the materials in the feeding cylinder 521 can flow into the second auxiliary chamber 3. The conveying screw 522 is arranged in the feeding cylinder 521, and the driver 523 is used to drive the conveying screw 522 to rotate. The conveying screw 522 penetrates through the feeding cylinder 521 and can rotate relative to the feeding cylinder 521. Then, the rotation of the conveying screw 522 can convey the materials in the feeding cylinder 521 horizontally towards the second auxiliary chamber 3.

[0066] It can be seen that the conveying screw 522 can control the material transfer speed and the material transfer amount per unit time, improve the feeding stability. At the same time, the feeding structure 52 can also crush large pieces of materials to a certain extent, improving the problem of easy accumulation of large pieces of materials. It can be understood that the central axis of the conveying screw 522 can be set absolutely horizontally or can extend along an inclined direction relative to the horizontal direction.

[0067] Exemplarily, such as Figure 3 and Figure 4 shown, the material bin 51 includes a stock bin 511, a feeding bin 512 and a first isolation valve 513. The stock bin 511 is arranged above the feeding bin 512, the first isolation valve 513 is arranged between the stock bin 511 and the feeding bin 512, the feeding cylinder 521 is arranged at the bottom inside the feeding bin 512, and the feeding cylinder 521 is respectively communicated with the feeding bin 512 and the second auxiliary chamber 3. Of course, in other examples, the feeding cylinder 521 can also be arranged at the bottom side outside the feeding bin 512.

[0068] In some embodiments, such as Figure 3 and Figure 4 shown, the driver 523 is arranged outside the material bin 51, which is convenient for the maintenance, repair, etc. of the driver 523.

[0069] Exemplarily, such as Figure 3 andFigure 4 As shown, the silo 51 includes a stock preparation silo 511, a feeding silo 512, and a first isolation valve 513. The stock preparation silo 511 is arranged above the feeding silo 512, and the first isolation valve 513 is arranged between the stock preparation silo 511 and the feeding silo 512. The feeding cylinder 521 is arranged at the bottom inside the feeding silo 512, and the driver 523 is arranged outside the feeding silo 512 (for example, the main structure of the driver 523 is located outside the feeding silo 512, and the drive shaft of the driver 523 can penetrate through the feeding silo 512 to extend into the feeding silo 512 to be in transmission connection with the feeding cylinder 521; or for another example, the entire driver 523 is located outside the feeding silo 512, and the feeding cylinder 521 is in transmission connection with the driver 523 through a component penetrating through the feeding silo 512).

[0070] In some embodiments, as Figure 1 、 Figure 2 、 Figure 7 shown, the furnace body 1 includes a furnace shell 11, a furnace cover 12, and a furnace bottom 13. The furnace cover 12 is detachably arranged on the top side of the furnace shell 11, and the furnace bottom 13 is detachably arranged on the bottom side of the furnace shell 11. A crucible 7 is arranged inside the furnace shell 11. Thus, it is convenient to disassemble, assemble, and combine the furnace body 1. The support assembly 4 further includes a third rotary lifting structure. The third rotary lifting structure is arranged on the support main body 41, and the third rotary lifting structure is used to drive the furnace shell 11 to lift and to drive the furnace shell 11 to rotate around the third vertical axis. Thus, during the disassembly and combination of the furnace, the third rotary lifting structure can realize the disassembly and assembly of the furnace shell 11, improving the operation convenience.

[0071] It can be understood that the docking of each of the first auxiliary chamber 2 and the second auxiliary chamber 3 with the furnace body 1 is the docking with the furnace cover 12.

[0072] For example, when crystal pulling is completed or about to be completed, if feeding is required, the furnace cover 12 is separated from the first auxiliary chamber 2, and the first rotary lifting structure 42 drives the first auxiliary chamber 2 to the first separation position to make space for the second auxiliary chamber 3. The second rotary lifting structure 43 can drive the second auxiliary chamber 3 to the second docking position to dock with the furnace cover 12 for subsequent feeding; if furnace disassembly is required, the connection between the furnace cover 12 and the first auxiliary chamber 2 is maintained, and the furnace cover 12 is disassembled from the furnace shell 11. At this time, the first rotary lifting structure 42 can drive the first auxiliary chamber 2 and the furnace cover 12 to move together to realize the disassembly of the furnace cover 12 and the furnace shell 11. Then, the third rotary lifting structure can drive the furnace shell 11 to move to other positions to realize the disassembly of the furnace shell 11 and the furnace bottom 13, so as to disassemble, clean, etc. the crucible 7 and the thermal field structure inside the furnace shell 11, facilitating the maintenance of the furnace body 1 to prepare for the next furnace. Of course, the process of combining the furnace body 1 is opposite to the above-mentioned furnace disassembly process and will not be elaborated here.

[0073] Optionally, the third rotation and lifting structure and the first rotation and lifting structure 42 have the same structure. The third vertical axis is parallel to or coincides with the first vertical axis, and the third vertical axis is parallel to or coincides with the second vertical axis. The radius of rotation of the furnace body 11 around the third vertical axis is equal to or different from the radius of rotation of the first auxiliary chamber 2 around the first vertical axis, and the radius of rotation of the furnace body 11 around the third vertical axis is equal to or different from the radius of rotation of the second auxiliary chamber 3 around the second vertical axis. Exemplarily, as Figure 1 and Figure 2 shown, the support body 41 is a columnar structure, and the first vertical axis, the second vertical axis, and the third vertical axis are all the central axes of the support body 41.

[0074] In some embodiments, as Figures 1-5 shown, the feeding assembly 5 further includes a feeding pipe 53. The feeding pipe 53 is vertically movable and disposed in the second auxiliary chamber 3, and the feeding pipe 53 has a first position and a second position. In the first position, the feeding pipe 53 is located in the second auxiliary chamber 3, and the feeding pipe 53 is separated from the feeding structure 52; in the second position (as Figure 4 and Figure 8 shown), the lower end of the feeding pipe 53 extends into the crystal growth chamber 10 through the docking port 2a of the second auxiliary chamber 3, and the upper end of the feeding pipe 53 is docked with the feeding structure 52.

[0075] It can be seen that in the first position, the feeding pipe 53 does not extend out of the docking port 2a of the second auxiliary chamber 3, and the entire feeding pipe 53 is located in the second auxiliary chamber 3, which will not affect the docking and separation of the second auxiliary chamber 3 and the furnace body 1. In the second position, the feeding pipe 53 can be lowered to extend into the crystal growth chamber 10, and the feeding pipe 53 is docked with the feeding structure 52, so that the feeding structure 52 conveys materials to the feeding pipe 53, and the materials are added into the crystal growth chamber 10 through the feeding pipe 53. Then, the feeding pipe 53 can play a certain role in converging the materials conveyed by the feeding structure 52, so as to add the materials to a specific position in the crystal growth chamber 10.

[0076] It can be understood that the second auxiliary chamber 3 is provided with a driving structure 8 for driving the feeding pipe 53 to move up and down. The specific structure of the driving structure 8 is well known to those skilled in the art and will not be described in detail here.

[0077] Of course, the present application is not limited thereto. In other embodiments, the feeding assembly 5 includes a feeding pipe 53 which is telescopically arranged in the second auxiliary chamber 3, and the upper end of the feeding pipe 53 is docked with the feeding structure 52; the feeding pipe 53 has a first state and a second state. In the first state, the feeding pipe 53 is located in the second auxiliary chamber 3. In the second state, the lower end of the feeding pipe 53 extends into the crystal growth chamber 10 through the docking port 2a of the second auxiliary chamber 3; it can be seen that whether in the first state or the second state, the feeding pipe 53 is always docked with the feeding structure 52 to receive the materials conveyed by the feeding structure 52. And in the first state, the feeding pipe 53 does not extend out of the docking port 2a of the second auxiliary chamber 3, and the entire feeding pipe 53 is located in the second auxiliary chamber 3, which will not affect the docking and separation of the second auxiliary chamber 3 and the furnace body 1. In the second state, the length of the feeding pipe 53 increases, so that the lower end of the feeding pipe 53 can descend to extend into the crystal growth chamber 10, enabling the feeding structure 52 to convey materials to the feeding pipe 53, so as to add the materials into the crystal growth chamber 10 through the feeding pipe 53. Then the feeding pipe 53 can play a certain role in converging the materials conveyed by the feeding structure 52, so as to add the materials to a specific position in the crystal growth chamber 10.

[0078] In some embodiments, as Figure 3 and Figure 4 shown, the feeding pipe 53 is arranged in the second auxiliary chamber 3 in a liftable manner, and a second isolation valve 6 is provided at one end of the feeding structure 52 docked with the feeding pipe 53. The second isolation valve 6 is used to control the on-off between the feeding structure 52 and the feeding pipe 53. When the second isolation valve 6 is opened, the feeding structure 52 is communicated with the feeding pipe 53, and the materials in the feeding structure 52 can be conveyed into the feeding pipe 53. When the second isolation valve 6 is closed, the feeding structure 52 is not communicated with the feeding pipe 53, and the materials in the feeding structure 52 cannot be conveyed into the feeding pipe 53.

[0079] Wherein, the second isolation valve 6 is configured such that the second isolation valve 6 is normally closed, and when the feeding pipe 53 moves to the second position, the feeding pipe 53 opens the isolation valve; for example, during the process of the feeding pipe 53 moving towards the second position, when the feeding pipe 53 just starts to be docked with the feeding structure 52, the feeding pipe 53 can cooperate with the second isolation valve 6. As the feeding pipe 53 continues to move towards the second position, the feeding pipe 53 can drive the second isolation valve 6 to switch from the closed state to the open state until the feeding pipe 53 moves to the second position, then the second isolation valve 6 switches to the open state. At this time, the feeding pipe 53 is completely docked with the feeding structure 52, that is, the movement of the feeding pipe 53 can switch the second isolation valve 6 in the closed state to the open state. When the feeding pipe 53 leaves the second position, without the acting force applied by the feeding pipe 53, the second isolation valve 6 can automatically switch to the closed state.

[0080] Thus, with the above arrangement of the second isolation valve 6, it can be switched to the open state by the feeding pipe 53 when the feeding pipe 53 is docked with the feeding structure 52, and switched to the closed state due to the lack of the effect of the feeding pipe 53 when the feeding pipe 53 is separated from the feeding structure 52, making the state of the second isolation valve 6 match the position of the feeding pipe 53. Or rather, making the mating state between the feeding pipe 53 and the feeding structure 52 match the state of the second isolation valve 6, which is beneficial to improving the convenience of the feeding operation and is not likely to cause waste of feeding, etc.

[0081] Exemplarily, as Figures 2-4 shown, the feeding structure 52 includes a feeding cylinder 521, a conveying screw 522 and a driver 523. The conveying screw 522 is arranged in the feeding cylinder 521, and the driver 523 is used to drive the conveying screw 522 to rotate. The feeding cylinder 521 is communicated with the material bin 51, and one end of the feeding cylinder 521 far from the material bin 51 is adapted to be docked with the feeding pipe 53. The above-mentioned one end of the feeding cylinder 521 can extend into the second sub-chamber 3, or the end face of the above-mentioned one end of the feeding cylinder 521 can be flush with the inner peripheral wall of the second sub-chamber 3.

[0082] Of course, in other embodiments, the opening and closing of the second isolation valve 6 can also be controlled by setting a driving structure such as a manual driving structure or an electric driving structure. At this time, the feeding pipe 53 can be lifted or lowered relative to the second sub-chamber 3, or the feeding pipe 53 can be telescopically arranged.

[0083] In some embodiments, as Figure 8 shown, the crystal growth equipment 100 further includes a crucible 7 arranged in the crystal growth chamber 10, and the crucible 7 is used to hold materials. When the lower end of the feeding pipe 53 extends into the crystal growth chamber 10, the lower end of the feeding pipe 53 extends into the crucible 7, and the lower end of the feeding pipe 53 is located below the upper end face of the crucible 7, which is beneficial to enhancing the converging effect of the feeding pipe 53 on the materials and reducing the probability of the materials being delivered outside the crucible 7.

[0084] In some embodiments, as Figure 8 shown, the maximum length of the lower end of the feeding pipe 53 extending into the crucible 7 is 20 mm, and the lower end of the feeding pipe 53 can move downward at most 20 mm below the upper end face of the crucible 7, so that the height position of the lower end of the feeding pipe 53 during the feeding process is appropriate, which can not only prevent the feeding pipe 53 from interfering with the materials in the crucible 7, but also be beneficial to reducing the splashing of the materials.

[0085] Optionally, the material preparation bin 511, the space inside the second sub-chamber 3 for storing silicon materials, and the conveying screw 522 are made of carbon-ceramic materials, which can ensure that the silicon materials are not contaminated by metals, and can withstand high temperature, pressure, impact and oxidation, so as to cope with the impact of the silicon materials and the high-temperature environment in the furnace.

[0086] Other configurations and operations of the crystal growth apparatus 100 according to the embodiments of the present invention are known to those of ordinary skill in the art and will not be described in detail herein.

[0087] Reference is made below Figures 1-8 A crystal growth apparatus 100 according to an embodiment of the present invention will be described in detail with reference to a specific embodiment. It should be understood that the following description is only illustrative and not a specific limitation of the invention.

[0088] As Figures 1-3 As shown, the crystal growth apparatus 100 includes a furnace body 1, a first auxiliary chamber 2, a second auxiliary chamber 3, a support assembly 4, and a feeding assembly 5. A crystal growth chamber 10 is defined within the furnace body 1. Docking ports 2a adapted to be docked with the furnace body 1 are respectively formed at the lower ends of the first auxiliary chamber 2 and the second auxiliary chamber 3. A seed crystal rotation and lifting structure 21 is provided on the first auxiliary chamber 2. The furnace body 1 includes a furnace lid 12, a furnace body 11, and a furnace bottom 13 sequentially arranged from top to bottom. A crucible 7 is provided within the furnace body 11, and a cooling assembly 9 is provided above the crucible 7. The cooling assembly 9 is connected to the furnace lid 12.

[0089] The support assembly 4 includes a support main body 41, a first rotation and lifting structure 42, and a second rotation and lifting structure 43. Both the first rotation and lifting structure 42 and the second rotation and lifting structure 43 are provided on the support main body 41. The first rotation and lifting structure 42 is used to drive the first auxiliary chamber 2 to lift and rotate about the central axis of the support main body 41, and the second rotation and lifting is used to drive the second auxiliary chamber 3 to lift and rotate about the central axis of the support main body 41, so that the first auxiliary chamber 2 and the second auxiliary chamber 3 can be alternatively docked with the furnace body 1.

[0090] The feeding assembly 5 includes a material bin 51, a feeding structure 52, and a feeding tube 53. The material bin 51 and the feeding structure 52 are provided in the second auxiliary chamber 3 and are both located outside the second auxiliary chamber 3. The feeding structure 52 is used to horizontally convey the material in the material bin 51 to the second auxiliary chamber 3. The feeding tube 53 is vertically movably provided in the second auxiliary chamber 3 and has a first position and a second position. In the first position, the feeding tube 53 is located within the second auxiliary chamber 3 and is separated from the feeding structure 52. In the second position, the lower end of the feeding tube 53 extends into the crystal growth chamber 10 through the docking port 2a of the second auxiliary chamber 3 and the upper end is docked with the feeding structure 52.

[0091] The silo 51 includes a stock bin 511, a feeding bin 512, and a first isolation valve 513. The stock bin 511 is arranged above the feeding bin 512 and is detachably arranged relative to the second auxiliary chamber 3. The first isolation valve 513 is arranged between the stock bin 511 and the feeding bin 512 and is used to control the on-off between the stock bin 511 and the feeding bin 512. The feeding structure 52 is used to convey the materials in the feeding bin 512 to the second auxiliary chamber 3. The feeding structure 52 includes a feeding cylinder 521, a conveying screw 522, and a driver 523. The feeding cylinder 521 is arranged at the bottom inside the silo 51 or at the bottom side outside the silo 51, and the feeding cylinder 521 is respectively communicated with the silo 51 and the second auxiliary chamber 3. The conveying screw 522 is arranged in the feeding cylinder 521, and the driver 523 is used to drive the conveying screw 522 to rotate.

[0092] When pulling the R1 rod, the first auxiliary chamber 2 is docked with the furnace body 1. When the crystal rod is in the first auxiliary chamber 2 and is about to be taken out at the end, on-site operators will report the silicon materials required for subsequent crystal pulling to the stock preparation room in advance. At this time, the stock bin 511 will be removed and transferred to the stock preparation room for feeding, and the stock bin 511 will be evacuated and sealed to ensure that the silicon materials are not polluted by the external environment. After that, the stock bin 511 will be connected to the first isolation valve 513. After the crystal rod is taken out, the first auxiliary chamber 2 is separated from the furnace body 1, and the second auxiliary chamber 3 is docked with the furnace body 1. The second auxiliary chamber 3 and the furnace body 1 are evacuated to make the pressure in the second auxiliary chamber 3 the same as the pressure in the stock bin 511. Then, the feeding pipe 53 moves from the first position to the second position until the feeding pipe 53 is docked with the feeding cylinder 521. At this time, the lower end of the feeding pipe 53 extends below the upper end surface of the crucible 7 and is close to the liquid level of the crucible 7 to reduce the risk of silicon liquid splashing when the silicon materials fall due to the too high position of the feeding pipe 53. Then, the first isolation valve 513 is opened, and the silicon materials in the stock bin 511 fall into the feeding bin 512. The conveying screw 522 is started to rotate to drive the silicon materials forward into the feeding pipe 53 and fall into the crucible 7. During this process, due to the gravity of the upper silicon materials, they will continuously descend and press the bottom silicon materials into each thread gap of the conveying screw 522, and they will be successively advanced into the interior of the feeding pipe 53 during the rotation of the conveying screw 522.

[0093] This method can ensure the continuous progress of the overall feeding process and change the traditional single-cylinder repeated feeding; in the traditional feeding method, the silicon materials in the single cylinder are all added in a short time, which will cause the temperature of the silicon liquid to drop, affect the verification of the melting rate, cause the silicon liquid surface to crystallize, and affect crystal pulling. In this application, by setting the rotation speed of the conveying screw 522, the silicon materials can fall into the crucible 7 continuously and appropriately to ensure rapid and continuous feeding at the maximum melting temperature; secondly, the feeding and melting processes will be in a fully sealed state and will not contact the outside world, and at the same time, metal pollution is avoided.

[0094] It can be seen that the first auxiliary chamber 2 is used for normal crystal bar drawing, and the second auxiliary chamber 3 is used for the equipment of silicon material storage and charging into the furnace. The second auxiliary chamber 3 can be connected to the furnace body 1 through the interface 2a to form an interconnected and sealed space, which does not affect normal crystal pulling and gets rid of the trouble of batch charging using a charging barrel in the traditional method. Moreover, the stock can be prepared on-site before each crystal bar is straightened, and all the required silicon materials can be loaded into the stock bin 511 in advance; secondly, the transfer and loading of silicon materials can maintain a sealed state and be isolated from the connection with the furnace body 1, and it can ensure that the normal crystal pulling is not affected during the loading process. When charging the crucible 7, only need to connect the second auxiliary chamber 3 to the furnace body 1 and evacuate to ensure the same pressure as that in the furnace, then lower the feeding pipe 53 to the upper side of the crucible 7 for feeding.

[0095] In addition, it should be noted that, in the above specific embodiments, the various specific technical features described can be combined in any suitable manner without conflict. To avoid unnecessary repetition, this application does not explain various possible combination methods separately. In addition, any combination can be made among various different embodiments of this application, as long as it does not violate the idea of this application, it should also be regarded as the content disclosed in this application.

[0096] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to the present invention. In addition, the features defined as "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, unless otherwise stated, the meaning of "a plurality" is two or more.

[0097] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

[0098] In the description of this specification, the descriptions referring to terms such as "one embodiment", "some embodiments", "schematic embodiments", "examples", "specific examples", or "some examples", etc. mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present utility model. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples.

[0099] Although the embodiments of the present utility model have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and spirit of the present utility model, and the scope of the present utility model is defined by the claims and their equivalents.

Claims

1. A crystal growth device, characterized in that, Comprising: A furnace body, within which a crystal growth chamber is defined; A first auxiliary chamber and a second auxiliary chamber, at the lower ends of the first auxiliary chamber and the second auxiliary chamber, docking ports adapted to dock with the furnace body are respectively formed, and a seed crystal rotation and lifting structure is provided on the first auxiliary chamber; A support assembly, the support assembly includes a support main body, a first rotation and lifting structure, and a second rotation and lifting structure, the first rotation and lifting structure and the second rotation and lifting structure are both provided on the support main body, the first rotation and lifting structure is used to drive the first auxiliary chamber to lift and rotate around a first vertical axis, and the second rotation and lifting is used to drive the second auxiliary chamber to lift and rotate around a second vertical axis, so that the first auxiliary chamber and the second auxiliary chamber can be replaceably docked with the furnace body; A feeding assembly, the feeding assembly includes a material bin and a feeding structure, the material bin and the feeding structure are provided in the second auxiliary chamber, and both are located outside the second auxiliary chamber, and the feeding structure is used to horizontally convey the material in the material bin to the second auxiliary chamber.

2. The crystal growth apparatus according to claim 1, wherein At least a part of the material bin is detachably cooperated with the second auxiliary chamber.

3. The crystal growth apparatus according to claim 2, wherein, The material bin includes a stock bin, a feeding bin, and a first isolation valve, the stock bin is provided above the feeding bin and is detachably arranged relative to the second auxiliary chamber, the first isolation valve is arranged between the stock bin and the feeding bin and is used to control the on-off between the stock bin and the feeding bin, and the feeding structure is used to convey the material in the feeding bin to the second auxiliary chamber.

4. The crystal growth device according to claim 3, characterized in that, A vacuum extraction port is formed on the stock bin, and a vacuum extraction port is formed on the second auxiliary chamber and / or the furnace body.

5. The crystal growth apparatus according to claim 1, wherein The feeding structure includes: A feeding cylinder, the feeding cylinder is provided at the bottom inside the material bin or at the bottom outside the material bin, and the feeding cylinder is respectively communicated with the material bin and the second auxiliary chamber; A conveying screw, the conveying screw is provided in the feeding cylinder; A driver, the driver is used to drive the conveying screw to rotate.

6. The crystal growth apparatus according to claim 1, wherein The furnace body includes a furnace body, a furnace cover, and a furnace bottom, the furnace cover is detachably provided on the top side of the furnace body, the furnace bottom is detachably provided on the bottom side of the furnace body, and a crucible is provided inside the furnace body, The support assembly further includes a third rotation and lifting structure, the second rotation and lifting structure is provided on the support main body, and is used to drive the furnace body to lift and rotate around a third vertical axis.

7. The crystal growth apparatus according to any one of claims 1-6, characterized in that, The feeding assembly further includes a feeding pipe, The feeding pipe is vertically movable in the second auxiliary chamber and has a first position and a second position. In the first position, the feeding pipe is located inside the second auxiliary chamber and is separated from the feeding structure. In the second position, the lower end of the feeding pipe extends into the crystal growth chamber through the docking port of the second auxiliary chamber and the upper end is docked with the feeding structure; or, The feeding pipe is telescopically provided in the second auxiliary chamber, and the upper end of the feeding pipe is docked with the feeding structure. The feeding pipe has a first state and a second state. In the first state, the feeding pipe is located inside the second auxiliary chamber. In the second state, the lower end of the feeding pipe extends into the crystal growth chamber through the docking port of the second auxiliary chamber.

8. The crystal growth device according to claim 7, characterized in that, The feeding pipe is vertically movably arranged in the second auxiliary chamber, and a second isolation valve is arranged at one end of the feeding structure connected to the feeding pipe. The second isolation valve is used to control the on-off between the feeding structure and the feeding pipe. The second isolation valve is configured such that the second isolation valve is normally closed, and the feeding pipe opens the second isolation valve when the feeding pipe moves to the second position.

9. The crystal growth apparatus according to claim 7, characterized in that, The crystal growth equipment further includes a crucible arranged in the crystal growth chamber. When the lower end of the feeding pipe extends into the crystal growth chamber, the lower end of the feeding pipe extends into the crucible.

10. The crystal growth apparatus according to claim 9, wherein The maximum length of the lower end of the feeding pipe extending into the crucible is 20 mm.

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