Wafer plasma surface activation equipment

Abstract

The utility model relates to wafer plasma surface activation equipment, and belongs to the technical field of equipment for processing semiconductor components. According to the utility model, gas molecules in the chamber are effectively excited through a high-intensity magnetic field generated by the ICP coil, so that high-density and high-activity plasma is formed; the I CP reactor is arranged on the upper side of the activation chamber, the activation chamber and the I CP reactor are isolated through the insulating ceramic isolation plate, I CP electromagnetic induction can penetrate through the isolation plate, and the isolation plate not only ensures the leakproofness of the activation chamber, but also effectively isolates the high-temperature environment of the I CP reactor. The adverse effect of the high temperature in the I CP reactor on the activation chamber is prevented; the I CP coil is arranged between the inner cylinder and the outer cylinder, the heat dissipation fan is arranged on the outer cylinder, and the heat dissipation coil pipe is arranged in the activation chamber, so that the heat dissipation effect is improved, and the temperature in the activation chamber can be effectively reduced.

Description

Technical Field

[0001] The utility model relates to a wafer plasma surface activation device, belonging to the technical field of devices for processing semiconductor components. Background Art

[0002] As an advanced surface treatment technology, plasma technology has shown great potential in the fields of materials science and semiconductor manufacturing. Plasma surface activation treatment can refine the surface roughness of materials, significantly increase the surface energy, effectively introduce functional groups, and change the surface chemical composition, so as to enhance the surface performance of materials and optimize the surface functions.

[0003] In the process of wafer manufacturing, plasma surface activation treatment is particularly important, and it plays an irreplaceable role in improving the wafer bonding quality and enhancing the device performance. However, most of the existing wafer plasma activation devices use capacitively coupled plasma (CCP) technology to generate plasma. Although CCP technology has certain effects in realizing wafer surface activation, it also has some significant disadvantages: during the operation of CCP technology, due to the strong action of the high-frequency electric field on gas molecules, a large amount of heat energy will be generated, which not only causes the temperature inside the device to rise, increases the burden on the heat dissipation system, but also may cause thermal stress on the wafer, thereby affecting the process stability and the quality of the wafer. In addition, the plasma density generated by CCP technology is relatively low. A lower plasma density means that under the same conditions, the number of active particles received on the wafer surface is limited, and it cannot fully meet the requirements of some high-precision or high-demand processes.

[0004] It should be noted that the above information disclosed in this background art section is only used to understand the background art of the concept of this application, and therefore, it may include information that does not constitute prior art. Summary of the Utility Model

[0005] The purpose of the utility model is to provide a new technical solution to improve or solve the technical problems existing in the above-mentioned prior art.

[0006] The technical solution provided by the utility model is as follows: a wafer plasma surface activation device, including a radio frequency power supply module, an ICP reactor, a reactor upper cover, a separator plate, an activation chamber, a vacuum pumping system, and a gas pumping pipeline;

[0007] The ICP reactor includes an ICP coil, an inner cylinder, and an outer cylinder. The outer cylinder is sleeved outside the inner cylinder, and an outer cavity is formed between the outer cylinder and the inner cylinder. The ICP coil is spirally installed in the outer cavity and electrically connected to the RF power supply module. A plurality of evenly distributed cooling fans are provided on the wall of the outer cylinder.

[0008] The reactor upper cover is installed above the ICP reactor in a manner that can be opened and closed, and the isolation plate is located between the activation chamber and the ICP reactor.

[0009] A wafer inlet is provided on the side wall of the activation chamber. A wafer stage, wafer lifting pins, and cooling coils are provided in the activation chamber. The wafer stage is fixed in the activation chamber. The cooling coils are arranged below the wafer stage. Through holes are provided on the wafer stage, and the wafer lifting pins are installed in the through holes in a manner that can be lifted and lowered.

[0010] An air extraction port is provided at the bottom of the activation chamber. The vacuum pumping system is communicated with the activation chamber through the air extraction port. An air inlet is provided at the top of the activation chamber. The gas pumping pipeline is communicated with the activation chamber through the air inlet. Both the air extraction port and the air inlet are located on the center line of the activation chamber.

[0011] The technical solution provided by the present utility model has the following beneficial effects compared with the prior art: The present utility model adopts inductively coupled plasma etching (Inductively Coupled Plasma, abbreviated as ICP) technology. Through the strong magnetic field generated by the ICP coil, gas molecules in the chamber are effectively excited to form a high-density and highly active plasma. The ICP reactor is arranged on the upper side of the activation chamber, and an isolation plate is used to isolate between the activation chamber and the ICP reactor. The ICP electromagnetic induction can penetrate the isolation plate. The isolation plate not only ensures the airtightness of the activation chamber but also effectively isolates the high-temperature environment of the ICP reactor, preventing the high temperature inside the ICP reactor from having an adverse impact on the activation chamber. The ICP coil is arranged between the inner cylinder and the outer cylinder, and cooling fans are provided on the outer cylinder. Cooling coils are also provided in the activation chamber, improving the heat dissipation effect, thereby effectively reducing the temperature in the activation chamber. The present utility model also arranges both the air extraction port and the air inlet on the center line of the activation chamber, ensuring uniform distribution of the airflow in the activation chamber and further improving the uniformity of wafer surface etching. The present utility model improves the wafer plasma surface activation device, optimizes the plasma generation mechanism, increases the density and activity of the plasma, reduces heat generation during equipment operation, and thus improves the quality and stability of wafer bonding while ensuring the activation effect of the wafer surface.

[0012] Based on the above technical solutions, the present utility model can be further improved as follows.

[0013] Furthermore, it further includes an upper cover opening and closing mechanism. The upper cover opening and closing mechanism includes a flipping arm, a worm and worm gear mechanism, a rotating shaft and a motor. The flipping arm is connected to the rotating shaft. The motor shaft of the motor is connected to the worm of the worm and worm gear mechanism. The worm wheel of the worm and worm gear mechanism is installed on the rotating shaft. The motor drives the rotating shaft to rotate through the worm and worm gear mechanism, thereby driving the flipping arm to flip. The radio frequency power supply module and the reactor upper cover are both installed on the flipping arm. The flipping arm can drive the reactor upper cover to open or close the ICP reactor, and during the opening and closing process, the radio frequency power supply module follows, keeping the electrical connection uninterrupted.

[0014] The beneficial effect of adopting the above further solution is that when it is necessary to repair, clean or replace components of the ICP reactor, only need to control the motor to drive the flipping arm to flip, then the reactor upper cover can be easily opened without direct manual operation, which saves time and improves safety. In addition, the radio frequency power supply module is installed on the flipping arm, and the weight of the radio frequency power supply module is borne by the flipping arm. During the opening and closing process, the radio frequency power supply module moves synchronously with the flipping arm, and the electrical connection always remains continuous. The equipment structure is reasonably designed, improving the space utilization rate.

[0015] Furthermore, the ICP coil includes a starting end, a middle wiring end and an ending end. The starting end of the ICP coil is connected to the ground wire. The middle wiring end of the ICP coil is electrically connected to the radio frequency power supply module. The ending end of the ICP coil is not directly connected to the radio frequency power supply module or the ground wire. The coil from the middle wiring end to the ending end of the ICP coil is an unconnected coil.

[0016] The beneficial effect of adopting the above further solution is that this wiring method has better plasma generation density and lower plasma damage, thereby realizing more uniform and efficient activation treatment of the wafer surface.

[0017] Furthermore, it further includes a gate and a lifting cylinder. The lifting cylinder drives the gate to open and close at the wafer inlet.

[0018] The beneficial effect of adopting the above further solution is that the automatic opening and closing of the gate can quickly respond to the needs of wafer entry and exit, reduce the manual operation time, and improve the continuity and efficiency of wafer processing.

[0019] Furthermore, the inner cylinder is a cylinder with a central cavity, the outer cylinder is a polygonal cylinder, the polygonal cylinder is provided with heat dissipation holes, and the heat dissipation fan is embedded on the flat cylinder wall of the polygonal cylinder.

[0020] The beneficial effects of adopting the above further solution are as follows: The cooling fan is embedded in the flat barrel wall of the polygonal barrel, making the installation of the cooling fan more stable. In addition, the design of the flat barrel wall of the polygonal barrel enables the airflow blown by the cooling fan to be evenly distributed along multiple directions of the barrel body, avoiding problems such as local overheating or poor air circulation.

[0021] Further, it further includes a lifting needle lifting mechanism. The lifting needle lifting mechanism is fixed to the bottom of the activation chamber through a bracket. The lifting needle lifting mechanism includes a driving cylinder, a coupling, a lead screw, a moving seat, a support rod, and a supporting ring. The driving shaft of the driving cylinder is connected to the lead screw through the coupling. The moving seat is threadedly connected to the lead screw and can move axially. The lower end of the support rod is fixed to the moving seat, and the upper end of the support rod is provided with the supporting ring. Multiple wafer lifting needles are evenly distributed on the supporting ring.

[0022] The beneficial effects of adopting the above further solution are as follows: By precisely controlling the stroke and speed of the driving cylinder, the stability and accuracy of the wafer lifting needle during the lifting process can be ensured, thereby guaranteeing the precise positioning of the wafer in the activation chamber.

[0023] Further, a plurality of support plates are evenly distributed circumferentially in the outer cavity between the inner cylinder and the outer cylinder. The ICP coil is installed in the outer cavity through the support plates.

[0024] The beneficial effects of adopting the above further solution are as follows: The setting of the support plates not only enhances the structural stability of the outer cavity but also provides a stable installation platform for the ICP coil. First, since the ICP coil generates certain electromagnetic force and thermal stress during operation, without sufficient support, the outer cavity may be at risk of deformation or damage. The uniform distribution of the support plates can effectively disperse these forces, protect the integrity of the outer cavity, and ensure the long-term stable operation of the equipment. Second, by installing the ICP coil through the support plates, the position of the coil can be ensured to be precise and fixed, avoiding problems such as uneven distribution of the electromagnetic field or performance degradation caused by the offset or loosening of the coil position.

[0025] Another technical solution provided by the present utility model is as follows: A method for wafer plasma surface activation, using the wafer plasma surface activation equipment as described above, includes the following steps:

[0026] S1. The gate at the wafer inlet is opened, and the robot sends the wafer into the activation chamber;

[0027] S2. The wafer lifting needle rises to support the wafer, and the robot withdraws;

[0028] S3. The wafer lifting needle descends, the wafer falls onto the wafer stage, and the wafer inlet gate is closed;

[0029] S4. Start the vacuum pumping system to evacuate the activation chamber. After the vacuum degree reaches the set value, introduce a predetermined reaction gas into the activation chamber through the gas pumping pipeline;

[0030] S5. After the required gas environment and vacuum degree are achieved in the chamber, connect the RF power supply, generate a magnetic field through the ICP coil, and excite the gas molecules in the chamber to become plasma state, and start the activation treatment on the wafer surface;

[0031] S6. When the activation treatment of the wafer surface is completed, stop the vacuum pumping system, and at the same time open the gate at the wafer inlet to prepare for unloading the processed wafer;

[0032] S7. The wafer lifting pin rises again to lift the processed wafer to a predetermined position above the wafer stage for the robot to pick up;

[0033] S8. The robot enters the chamber and stops at the predetermined wafer picking position;

[0034] S9. The wafer lifting pin descends, and the wafer falls onto the robot arm;

[0035] S10. The robot drags the wafer out of the activation chamber and enters the next process.

[0036] The technical solution provided by the present utility model has the following beneficial effects compared with the prior art: Through the strong magnetic field generated by the ICP coil in the present utility model, the gas molecules in the chamber are effectively excited to form a high-density and high-activity plasma. This plasma can interact more fully with the wafer surface, improving the activation effect. Before wafer processing, through the precise control of the vacuum pumping system and the gas pumping pipeline, it is ensured that the required gas environment and vacuum degree are achieved in the activation chamber. The entire processing process realizes a high degree of automation. From the feeding, lifting, processing to the removal of the wafer, it is all completed by automated equipment such as robots and the wafer lifting pin lifting mechanism, which not only improves production efficiency but also reduces errors and safety hazards caused by manual operation. After the wafer surface is processed by the method of the present utility model, its activation effect is significantly improved. This highly activated surface is more conducive to the subsequent wafer bonding process, can significantly enhance the bonding strength of the bonding interface, reduce defects and peeling phenomena, and thus improve the overall quality and stability of wafer bonding.

[0037] Further, in step S4, until the vacuum degree in the activation chamber reaches 50 mTorr, then introduce a predetermined reaction gas into the activation chamber.

[0038] The beneficial effect of adopting the above further solution is that a vacuum degree of 50 mTorr can reduce energy consumption and vacuum pumping time while ensuring the quality of the plasma.

[0039] Further, in step S5, the frequency of the radio frequency power supply output is adjusted by a radio frequency matcher to reach 13.56 MHz.

[0040] The beneficial effect of adopting the above further solution is that the electromagnetic wave at this frequency can effectively penetrate the gas and excite the molecules or atoms therein to form a plasma. By adjusting the radio frequency power supply output to this frequency, the generation efficiency and stability of the plasma can be optimized. Description of the Drawings

[0041] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only the embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained according to the provided drawings without creative efforts.

[0042] Figure 1 Structural schematic diagram of the wafer plasma surface activation device of the present invention;

[0043] Figure 2 Structural schematic diagram of the bottom view angle of the wafer plasma surface activation device of the present invention;

[0044] Figure 3 Cross-sectional view of the inside of the activation chamber of the wafer plasma surface activation device of the present invention;

[0045] Figure 4 Structural schematic diagram of the inside of the activation chamber of the present invention;

[0046] Figure 5 Structural schematic diagram of the ICP reactor of the present invention;

[0047] Figure 6 Structural schematic diagram of the lifting mechanism of the lifting pin of the present invention;

[0048] Figure 7 Front view of the cooperation between the lifting mechanism of the lifting pin and the wafer carrier of the present invention;

[0049] Figure 8 Layout diagram of the air extraction port and the air inlet port in the activation chamber of the present invention;

[0050] Figure 9 Structural schematic diagram of the ICP coil wiring of the present invention;

[0051] Figure 10 Curve diagram of the ion density and power in the activation chamber of the present invention;

[0052] Figure 11It is the curve graph of the electronic temperature and power of the present utility model;

[0053] In the figure, 100 is the radio frequency power supply module;

[0054] 200 is the ICP reactor; 210 is the ICP coil; 220 is the inner cylinder; 230 is the outer cylinder; 240 is the cooling fan; 250 is the support plate;

[0055] 300 is the reactor upper cover; 400 is the isolation plate;

[0056] 500 is the activation chamber; 510 is the wafer stage; 520 is the wafer lifting pin; 530 is the cooling coil; 540 is the wafer inlet; 550 is the air extraction port; 560 is the air inlet;

[0057] 600 is the lifting pin lifting mechanism; 610 is the driving cylinder; 620 is the moving seat; 630 is the support rod; 640 is the supporting ring;

[0058] 700 is the upper cover opening and closing mechanism; 710 is the flipping arm; 720 is the worm and gear mechanism; 730 is the rotating shaft; 740 is the motor;

[0059] 810 is the gate; 820 is the lifting cylinder;

[0060] 910 is the vacuum pumping system; 920 is the gas pumping pipeline. Detailed implementation manners

[0061] The serial numbers assigned to the components in this text, such as "first", "second", etc., are only used to distinguish the described objects and do not imply any priority in order or specific technical meaning. In addition, the concepts of "connection" and "coupling" mentioned in this application, unless otherwise specifically stated, are both regarded as including two situations: direct connection (coupling) and indirect connection (coupling).

[0062] When interpreting the description of this application, it is necessary to clarify that the orientation or positional relationship indicated by terms such as "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", etc. is based on the perspective and layout shown in the drawings, aiming to facilitate the description and simplify the description process, rather than an absolute limitation on the actual orientation, construction method, and operation mode of the device or component. Therefore, these terms should not be understood as restrictive interpretations of the content of this application.

[0063] The principles and features of the present utility model are described below in conjunction with examples. The examples given are only used to explain the present utility model and are not used to limit the scope of the present utility model.

[0064] Such as Figure 1 - Figure 7As shown in the figure, a wafer plasma surface activation device includes a radio frequency power supply module 100, an ICP reactor 200, a reactor upper cover 300, a separator plate 400, an activation chamber 500, a vacuum pumping system 910, and a gas pumping pipeline 920. The ICP reactor 200 includes an ICP coil 210, an inner cylinder 220, and an outer cylinder 230. The outer cylinder 230 is sleeved outside the inner cylinder 220, and an outer cavity is formed between the outer cylinder 230 and the inner cylinder 220. The ICP coil 210 is spirally installed in the outer cavity and electrically connected to the radio frequency power supply module 100. A plurality of evenly distributed cooling fans 240 are provided on the barrel wall of the outer cylinder 230. The reactor upper cover 300 is installed above the ICP reactor 200 in a manner that can be opened and closed to open or close the ICP reactor 200. The ICP reactor 200 is located above the activation chamber 500, and the separator plate 400 is located between the activation chamber 500 and the ICP reactor 200. The separator plate 400 not only provides a sealed space for the activation chamber 500 but also can play a heat insulation role to prevent the high temperature inside the ICP reactor 200 from having an adverse impact on the activation chamber 500. In this embodiment, the separator plate 400 is a ceramic separator plate. The ceramic separator plate not only has insulation performance, but also ICP electromagnetic induction can penetrate the ceramic separator plate. Therefore, even with the ceramic separator plate, the ICP system can still operate effectively, achieving complete compatibility and interference-free transmission of electromagnetic induction signals. A wafer inlet 540 is provided on the side wall of the activation chamber 500. A wafer stage 510, wafer lifting pins 520, and cooling coils 530 are provided in the activation chamber 500. The wafer stage 510 is fixed in the activation chamber 500, and the cooling coils 530 are arranged below the wafer stage 510 for controlling the temperature of the wafer during the processing. Through holes are provided on the wafer stage 510, and the wafer lifting pins 520 are installed in the through holes in a manner that can be lifted and lowered. An air extraction port 550 is provided at the bottom of the activation chamber 500. The vacuum pumping system 910 is connected to the activation chamber 500 through the air extraction port 550 to achieve vacuum pumping. An air inlet 560 is provided at the top of the activation chamber 500. The gas pumping pipeline 920 is connected to the activation chamber 500 through the air inlet 560 to provide the required gas environment for the processing. Both the air extraction port 550 and the air inlet 560 are located on the center line of the activation chamber 500 (refer to Figure 8 ), which can optimize the air flow distribution and improve the uniformity and efficiency of plasma surface treatment.

[0065] The wafer plasma surface activation device further includes an upper cover opening and closing mechanism 700, a gate 810, and a lifting cylinder 820. The upper cover opening and closing mechanism 700 includes a flipping arm 710, a worm and worm gear mechanism 720, a rotating shaft 730, and a motor 740. The flipping arm 710 is connected to the rotating shaft 730. The motor shaft of the motor 740 is connected to the worm of the worm and worm gear mechanism 720. The worm gear of the worm and worm gear mechanism 720 is installed on the rotating shaft 730. The motor 740 drives the rotating shaft 730 to rotate through the worm and worm gear mechanism 720, thereby driving the flipping arm 710 to flip. The RF power supply module 100 and the reactor upper cover 300 are both installed on the flipping arm 710. The flipping arm 710 can drive the reactor upper cover 300 to open or close the ICP reactor 200, and during the opening and closing process, the RF power supply module 100 follows, ensuring a stable electrical connection between the RF power supply and the induction coil during the opening or closing of the reactor upper cover 300.

[0066] As Figure 9 shown, the ICP coil 210 includes a starting end, an intermediate connection end, and an ending end. The starting end of the ICP coil 210 is connected to the ground wire. The intermediate connection end of the ICP coil 210 is electrically connected to the RF power supply module 100. The ending end of the ICP coil 210 is not directly connected to the RF power supply module 100 or the ground wire. The part of the ICP coil 210 from the intermediate connection end to the ending end is an unconnected coil.

[0067] The RF power supply module 100 provides high-frequency alternating current, which is input into the ICP coil 210 through the intermediate connection end. The RF energy flows in the ICP coil 210 and generates a changing magnetic field, which in turn excites and maintains plasma in the activation chamber 500. The unconnected coil part (from the intermediate connection end to the ending end) forms an "open circuit" or "floating" circuit segment. In the RF circuit, the open end can be regarded as a capacitive load, which will form a complex electromagnetic coupling with other parts of the coil. This coupling effect can enhance the RF field strength in the coil, enabling more RF energy to be coupled into the plasma, thereby increasing the density of the plasma.

[0068] The wafer plasma surface activation device further includes a gate 810 and a lifting cylinder 820. The lifting cylinder 820 drives the gate 810 to open and close at the wafer inlet 540.

[0069] The inner cylinder 220 is a cylinder with a central cavity. The outer cylinder 230 is a polygonal cylinder, and heat dissipation holes are provided on the polygonal cylinder. The heat dissipation fan 240 is embedded in the flat cylinder wall of the polygonal cylinder.

[0070] The wafer plasma surface activation device further includes a lifting pin lifting mechanism 600. The lifting pin lifting mechanism 600 is fixed to the bottom of the activation chamber 500 through a bracket. The lifting pin lifting mechanism 600 includes a driving cylinder 610, a coupling, a lead screw, a moving seat 620, a support rod 630, and a supporting ring 640. The driving shaft of the driving cylinder 610 is connected to the lead screw through the coupling. The moving seat 620 is threadedly connected to the lead screw and can move axially. The lower end of the support rod 630 is fixed to the moving seat 620, and the upper end of the support rod 630 is provided with the supporting ring 640. A plurality of wafer lifting pins 520 are evenly distributed on the supporting ring 640.

[0071] A plurality of support plates 250 are evenly distributed in the circumferential direction of the outer cavity between the inner cylinder 220 and the outer cylinder 230. The ICP coil 210 is installed in the outer cavity through the support plates 250.

[0072] A wafer plasma surface activation method using the wafer plasma surface activation device includes the following steps:

[0073] S1. The gate 810 at the wafer inlet 540 is opened, and the robot sends the wafer into the activation chamber 500.

[0074] S2. The wafer lifting pins 520 rise to lift the wafer, and the robot withdraws. Since the robot is limited by its structural design and is not equipped with a Z-axis function, it cannot perform vertical movement, so it cannot directly complete the task of placing the wafer from a high place to a low place. The use of lifting pins ensures that the wafer can be placed on the wafer stage 510 smoothly and accurately.

[0075] S3. The wafer lifting pins 520 descend, and the wafer falls onto the wafer stage 510. The gate 810 at the wafer inlet 540 is closed.

[0076] S4. Start the vacuum pumping system 910 to evacuate the activation chamber 500 until the vacuum degree in the activation chamber 500 reaches 50 mTorr. Through the gas pumping pipeline 920, introduce a predetermined reaction gas into the activation chamber 500. Adjust the frequency of the radio frequency power supply output by the radio frequency matcher to reach 13.56 MHz.

[0077] S5. During the process of surface activation treatment of the wafer, continuous vacuum pumping is carried out, and the reaction gas is also continuously introduced. After the required gas environment and vacuum degree are reached in the chamber, the radio frequency power supply is connected, and a magnetic field is generated through the ICP coil 210 to excite the gas molecules in the chamber into a plasma state, and the surface activation treatment of the wafer begins; The plasma, with its high energy and strong reactivity, effectively excites and dissociates gas molecules to generate abundant active species, which then interact with the material surface to achieve a series of remarkable surface modification effects. Plasma surface activation treatment can finely adjust the surface properties of materials, including but not limited to increasing surface roughness, significantly enhancing surface energy, cleverly introducing various functional groups, and profoundly changing the surface chemical composition. These combined effects together improve the overall performance and function of the material surface.

[0078] S6. When the surface activation treatment of the wafer is completed, stop the vacuum pumping system 910, and at the same time, open the gate 810 at the wafer inlet 540 to prepare for unloading the processed wafer;

[0079] S7. The wafer lifting pin 520 rises again, lifting the processed wafer to a predetermined position above the wafer stage 510 for the robot to pick up;

[0080] S8. The robot enters the chamber and stops at the predetermined wafer picking position;

[0081] S9. The wafer lifting pin 520 descends, and the wafer falls onto the robot arm;

[0082] S10. The robot drags the wafer out of the activation chamber 500 and enters the next process.

[0083] The utility model improves the wafer plasma surface activation equipment, optimizes the plasma generation mechanism, increases the density and activity of the plasma, and reduces the heat generation during the operation of the equipment. As Figure 10 and Figure 11 shown, the ion density measurement results show that the equipment achieves a plasma density as high as 1.5E+12 / cm3 and maintains a very low electron temperature (about 1 eV), thus improving the quality and stability of wafer bonding while ensuring the wafer surface activation effect.

[0084] The above are only the preferred embodiments of the utility model, and are not intended to limit the utility model. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the utility model shall be included within the protection scope of the utility model.

Claims

1. A wafer plasma surface activation device, characterized in that, It includes a radio frequency power supply module (100), an ICP reactor (200), a reactor upper cover (300), a partition plate (400), an activation chamber (500), a vacuum pumping system (910) and a gas pumping pipeline (920); The ICP reactor (200) includes an ICP coil (210), an inner cylinder (220) and an outer cylinder (230). The outer cylinder (230) is sleeved outside the inner cylinder (220). An outer cavity is formed between the outer cylinder (230) and the inner cylinder (220). The ICP coil (210) is spirally installed in the outer cavity and electrically connected to the radio frequency power supply module (100). A plurality of evenly distributed cooling fans (240) are provided on the cylinder wall of the outer cylinder (230); The reactor upper cover (300) is installed above the ICP reactor (200) in a manner that can be opened and closed. The ICP reactor (200) is located on the upper side of the activation chamber (500), and the partition plate (400) is located between the activation chamber (500) and the ICP reactor (200); A wafer inlet (540) is provided on the side wall of the activation chamber (500). A wafer stage (510), wafer lifting pins (520) and cooling coils (530) are provided in the activation chamber (500). The wafer stage (510) is fixed in the activation chamber (500). The cooling coils (530) are arranged below the wafer stage (510). Through holes are provided on the wafer stage (510), and the wafer lifting pins (520) are installed in the through holes in a manner that can be lifted and lowered; An air extraction port (550) is provided at the bottom of the activation chamber (500). The vacuum pumping system (910) is communicated with the activation chamber (500) through the air extraction port (550); An air inlet (560) is provided at the top of the activation chamber (500). The gas pumping pipeline (920) is communicated with the activation chamber (500) through the air inlet (560). Both the air extraction port (550) and the air inlet (560) are located on the center line of the activation chamber (500).

2. The wafer plasma surface activation device according to claim 1, wherein, It further includes an upper cover opening and closing mechanism (700). The upper cover opening and closing mechanism (700) includes a flipping arm (710), a worm and worm gear mechanism (720), a rotating shaft (730) and a motor (740). The flipping arm (710) is connected to the rotating shaft (730). The motor shaft of the motor (740) is connected to the worm of the worm and worm gear mechanism (720). The worm wheel of the worm and worm gear mechanism (720) is installed on the rotating shaft (730). The motor (740) drives the rotating shaft (730) to rotate through the worm and worm gear mechanism (720), thereby driving the flipping arm (710) to flip. The radio frequency power supply module (100) and the reactor upper cover (300) are both installed on the flipping arm (710). The flipping arm (710) can drive the reactor upper cover (300) to open or close the ICP reactor (200), and during the opening and closing process, the radio frequency power supply module (100) follows, keeping the electrical connection uninterrupted.

3. The wafer plasma surface activation device according to claim 1 or 2, characterized in that The ICP coil (210) includes a starting end, an intermediate wiring end and a terminal end. The starting end of the ICP coil (210) is connected to the ground wire. The intermediate wiring end of the ICP coil (210) is electrically connected to the radio frequency power supply module (100). The terminal end of the ICP coil (210) is not directly connected to the radio frequency power supply module (100) or the ground wire. The part of the ICP coil (210) from the intermediate wiring end to the terminal end is an unconnected coil.

4. The wafer plasma surface activation device according to claim 3, characterized in that, It further includes a gate (810) and a lifting cylinder (820). The lifting cylinder (820) drives the gate (810) to open and close at the wafer inlet (540).

5. The wafer plasma surface activation device according to claim 1, characterized in that, The inner cylinder (220) is a cylinder with a central cavity. The outer cylinder (230) is a polygonal cylinder. Heat dissipation holes are provided on the polygonal cylinder. The heat dissipation fan (240) is embedded in the flat wall of the polygonal cylinder.

6. The wafer plasma surface activation device according to claim 1, wherein It further includes a wafer lifting pin lifting mechanism (600). The wafer lifting pin lifting mechanism (600) is fixed to the bottom of the activation chamber (500) through a bracket. The wafer lifting pin lifting mechanism (600) includes a driving cylinder (610), a coupling, a lead screw, a moving seat (620), a support rod (630) and a supporting ring (640). The driving shaft of the driving cylinder (610) is connected to the lead screw through the coupling. The moving seat (620) is threadedly connected to the lead screw and can move axially. The lower end of the support rod (630) is fixed to the moving seat (620). The upper end of the support rod (630) is installed with the supporting ring (640). A plurality of wafer lifting pins (520) are evenly distributed on the supporting ring (640).

7. The wafer plasma surface activation device according to claim 1, characterized in that, A plurality of support plates (250) are evenly distributed in the circumferential direction of the outer cavity between the inner cylinder (220) and the outer cylinder (230). The ICP coil (210) is installed in the outer cavity through the support plates (250).

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