Semiconductor device
Through the integrated etching and measurement unit, the combination of EDX detection components and ion guns is used to solve the problems of low wafer thickness detection efficiency and insufficient accuracy in the prior art, and real-time and accurate thickness monitoring in the etching chamber is achieved.
Patent Information
- Application Number
- CN202422346278.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-25
- Publication Date
- 2025-07-25
- Estimated Expiration
- 2034-09-25
AI Technical Summary
The prior art cannot directly detect wafer thickness after etching, and requires wet cleaning to remove polymers, resulting in low detection efficiency, limited accuracy, and difficulty in monitoring the etching amount in time.
Integrated etching unit and measurement unit, the EDX detection component emits electron beams to bombard the side wall of the wafer, obtains the thickness by receiving characteristic signals, calculates the thickness based on the motion speed, and uses an ion gun to clean the polymer, position sensors to monitor the measurement area, and the motor controls the motion speed of the wafer.
Improves the accuracy and efficiency of wafer thickness measurement, and can monitor thickness in real time in the etching chamber without cleaning, reducing the requirements for wafer morphology and cleanliness.
Smart Images
Figure CN223155988U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductor manufacturing, and particularly relates to a semiconductor device. Background Art
[0002] A wafer thickness measuring instrument is one of the important detection devices required in the integrated circuit manufacturing process, and it measures the thickness of a wafer based on the principle of optical interference. That is, when the probing light irradiates the surface of the wafer, optical phenomena of reflection and interference will occur, and the thickness of the wafer can be obtained by analyzing the interference spectrum. Among them, the wafer thickness measuring instrument has very high requirements for the surface topography of the wafer, and a regular pattern needs to be formed and the wafer surface should be as smooth as possible, otherwise it is easy to affect the detection accuracy.
[0003] However, as Figure 1 shown, a large amount of polymers 101 often appear on the surface of the wafer 10 after being processed by an etching process. These polymers 101 are likely to interfere with the spectral signal S detected by the wafer thickness measuring instrument, resulting in a large deviation in the detection result. In this regard, the prior art cannot directly detect the thickness of the wafer after the etching treatment, but needs to use a wet cleaning process to remove the polymers 100 on the surface of the wafer 10 before measuring the thickness of the wafer 10 each time. This measurement method not only has low detection efficiency and limited detection accuracy, but also is difficult to monitor the etching amount of the wafer in a timely manner.
[0004] Therefore, there is an urgent need for a new semiconductor device to solve the above technical problems. Summary of the Utility Model
[0005] The purpose of the utility model is to provide a semiconductor device to solve the problem of how to improve the accuracy and efficiency of wafer thickness measurement.
[0006] To solve the above technical problems, the utility model provides a semiconductor device, including: an etching unit and a measurement unit;
[0007] The etching unit includes an etching chamber, and a carrier is arranged in the etching chamber for carrying the wafer;
[0008] The measurement unit includes an EDX detection component; the EDX detection component is located in the etching chamber and is arranged on the side of the carrier;
[0009] Wherein, the carrier is further used to drive the wafer to move vertically; and when the wafer moves vertically, the EDX detection component is used to emit a detection signal towards the side wall of the wafer and receive a characteristic signal, so as to obtain the thickness of the wafer according to the intensity change of the characteristic signal and the movement speed of the wafer.
[0010] Optionally, in the semiconductor device, the measurement unit further includes an ion gun; the ion gun is located in the etching chamber, is disposed on the side of the carrier stage, and is spaced apart from the EDX detection component;
[0011] Wherein, when the wafer moves vertically, the ion gun is used to emit an ion beam toward the sidewall of the wafer to clean the sidewall of the wafer.
[0012] Optionally, in the semiconductor device, the EDX detection component includes a transmitter and a detector; the transmitter is used to emit the detection signal toward the sidewall of the wafer, and the detector is at least used to receive the characteristic signal emitted by the wafer; wherein, the detection signal includes an electron beam; the characteristic signal includes characteristic X-rays.
[0013] Optionally, in the semiconductor device, when measuring the thickness of the wafer, the wafer moves vertically upward; wherein, the transmitter is located above the ion gun, and the angle between the emission direction of the transmitter and the movement direction of the wafer is an acute angle, and the angle between the emission direction of the ion gun and the movement direction of the wafer is an obtuse angle.
[0014] Optionally, in the semiconductor device, there is a measurement area in the etching chamber, and when the carrier stage drives the wafer to move to the measurement area, the EDX detection component and the ion gun are respectively used to emit the detection signal and the ion beam toward the sidewall of the wafer.
[0015] Optionally, in the semiconductor device, the measurement unit further includes a position sensor; the position sensor is disposed in the etching chamber and is communicatively connected to the EDX detection component and the ion gun respectively;
[0016] Wherein, when the wafer moves to the measurement area, the position sensor is used to obtain the position signal of the wafer and send an enable signal to the EDX detection component and the ion gun.
[0017] Optionally, in the semiconductor device, a first motor and a second motor are disposed in the carrier stage; and the first motor and the second motor are respectively communicatively connected to the position sensor;
[0018] Wherein, before the position sensor obtains the position signal, the first motor is used to drive the carrier stage to drive the wafer to move; after the position sensor obtains the position signal, the first motor stops, and the second motor is used to drive the carrier stage to drive the wafer to move; and the movement speed of the wafer driven by the second motor is less than the movement speed of the wafer driven by the first motor.
[0019] Optionally, in the semiconductor device, the second motor is a piezoelectric motor to drive the wafer to perform nanometer-scale displacement.
[0020] Optionally, in the semiconductor device, a plurality of support pins are arranged in the carrier platform; the plurality of support pins are respectively connected to the first motor and the second motor, and under the drive of the first motor or the second motor, the plurality of support pins are used to support the wafer and drive the wafer to move vertically.
[0021] Optionally, in the semiconductor device, the measurement unit includes a plurality of the ion guns and a plurality of the EDX detection components, and the plurality of the ion guns and the plurality of the EDX detection components are distributed in the measurement area at intervals.
[0022] In summary, the utility model provides a semiconductor device. Compared with the prior art, the semiconductor device integrates a measuring unit and an etching unit into one. And the measuring unit is used to measure the thickness of the wafer, which is based on the EDX element analysis principle, using the EDX detection component to emit an electron beam to bombard the side wall of the wafer, and obtain the change of the energy intensity of each element through the received characteristic X-ray, and then obtain the time of scanning the side wall of the wafer; and then obtain the thickness of the wafer according to the movement speed of the wafer. This thickness measurement method not only reduces the requirements for the morphology and cleanliness of the wafer, but also improves the measurement accuracy and efficiency. It does not need to be cleaned before measurement, and can realize timely and accurate monitoring of the thickness of the wafer in the etching chamber.
[0023] Furthermore, an ion gun is also provided in the measuring unit in the semiconductor device, which is used to clean the polymer on the side wall of the wafer before the EDX detection component is used to measure the thickness of the wafer, so as to improve the measurement accuracy. In addition, a position sensor is also provided in the measuring unit to monitor whether the wafer enters the measurement area. And, a first motor and a second motor are also provided in the carrier of the etching unit, so that the first motor is used to drive the wafer before the wafer enters the measurement area to move the wafer quickly; and the second motor is used to drive the wafer after the wafer enters the measurement area to move the wafer slowly, thereby taking into account the purpose of improving the measurement accuracy and measurement efficiency of the wafer thickness. BRIEF DESCRIPTION OF THE DRAWINGS
[0024] Those skilled in the art will appreciate that the drawings are provided for a better understanding of the present invention, but do not constitute any limitation on the scope of the present invention.
[0025] Figure 1 It is a schematic diagram of measuring wafer thickness using the optical interference principle in the prior art.
[0026] Figure 2 It is a schematic structural diagram of a semiconductor device in an embodiment of the present utility model.
[0027] Figure 3 It is a schematic diagram of the EDX elemental analysis principle in an embodiment of the present utility model.
[0028] Figure 4 It is a curve graph showing the change of element energy with time in an embodiment of the present utility model.
[0029] Figure 5 It is a schematic process diagram of measuring the thickness of a wafer in an embodiment of the present utility model.
[0030] Figure 6 It is a schematic diagram showing the relationship between the emission directions of the emitter and the ion gun and the movement direction of the wafer in an embodiment of the present utility model.
[0031] Figure 7 It is a schematic connection diagram of a position sensor, a first motor, a second motor, an EDX detection component, an ion gun, and a support pin in an embodiment of the present utility model.
[0032] Figure 8 It is a schematic structural diagram of a semiconductor device provided with two groups of EDX detection components and ion guns in an embodiment of the present utility model.
[0033] And, in the drawings:
[0034] 10 - wafer; 101 - polymer;
[0035] 20 - etching unit; 201 - etching chamber; 202 - carrier table;
[0036] 30 - measuring unit; 301 - EDX detection component; 3011 - emitter; 3012 - detector; 302 - ion gun; 303 - position sensor;
[0037] S - spectral signal; E - electron beam; W - sample; P - support pin; T - hole; M1 - first motor; M2 - second motor; Z - measuring area; V1 - movement direction of the wafer; V2 - emission direction of the emitter; V3 - emission direction of the ion gun; L1 - first position; L2 - second position; L3 - third position; L4 - fourth position; α1 - angle between V1 and V2; α2 - angle between V1 and V3. Detailed implementation manners
[0038] To make the objectives, advantages, and features of the present utility model clearer, the following further elaborates on the present utility model in conjunction with the accompanying drawings and specific embodiments. It should be noted that the accompanying drawings are in extremely simplified forms and not drawn to scale, solely for facilitating and clearly assisting in explaining the objectives of the embodiments of the present utility model. In addition, the structures shown in the accompanying drawings are often part of the actual structures. Specifically, the emphasis points to be shown in each drawing are different, and sometimes different scales are used. It should also be understood that unless otherwise specified or indicated, the terms "first", "second", "third", etc. in the specification are only used to distinguish the various components, elements, steps, etc. in the specification, rather than to represent the logical relationships or sequential relationships, etc. between the various components, elements, steps. Also, in the specification of this application, the vertical direction refers to the direction perpendicular to the surface of the carrier stage, and the horizontal line refers to a straight line parallel to the surface of the carrier stage.
[0039] Please refer to Figure 2 , this embodiment provides a semiconductor device, including: an etching unit 20 and a measurement unit 30; the etching unit 20 includes an etching chamber 201, and a carrier stage 202 is disposed in the etching chamber 201 for carrying a wafer 10; the measurement unit 30 includes an EDX detection component 301; the EDX detection component 301 is located in the etching chamber 201 and is disposed on the side of the carrier stage 202; wherein, the carrier stage 202 is further configured to drive the wafer 10 to move in the vertical direction; and when the wafer 10 moves in the vertical direction, the EDX detection component 301 is configured to emit a detection signal towards the sidewall of the wafer 10 and receive a characteristic signal, so as to obtain the thickness of the wafer 10 according to the intensity change of the characteristic signal and the movement speed of the wafer 10.
[0040] It can be seen that the semiconductor device provided in this embodiment can combine the etching unit 20 and the measurement unit 30 to use the measurement unit 30 to timely monitor the thickness of the wafer 10. Among them, the measurement unit 30 obtains the thickness of the scanned wafer 10 according to the EDX element analysis principle. It not only reduces the requirements for the morphology and cleanliness of the wafer 10, but also improves the measurement accuracy and measurement efficiency.
[0041] The following specifically describes the semiconductor device provided in this embodiment in conjunction with the attached Figures 2 to 8 drawings.
[0042] Please continue to refer to Figure 2 , the semiconductor device provided in this embodiment includes: an etching unit 20 and a measurement unit 30. The etching unit 20 is configured to perform an etching process on the wafer 10. The etching process includes but is not limited to plasma etching, ion beam etching, reactive ion etching, and wet etching. The measurement unit 30 is configured to detect the thickness of the wafer 10 before or after etching.
[0043] Specifically, the etching unit 20 is an etching machine tool, which has an etching chamber 201 for accommodating the wafer 10 and providing an atmosphere environment for etching the wafer 10. A carrier table 202 is arranged in the etching chamber 201; the carrier table 202 is used for carrying the wafer 10. Among them, an electrostatic chuck (ESC) is arranged on the top surface of the carrier table 202, and a plurality of support pins P are further arranged in the electrostatic chuck. The support pins P can rise in a direction away from the top surface of the carrier table 202 when the robotic arm grabs or places the wafer 10, so as to lift the wafer 10. That is, it rises in the V1 direction. Similarly, the support pins P can also descend in the opposite direction of the V1 direction into the carrier table 202. Based on this, the support pins P can carry the wafer 10 and drive the wafer 10 to move in a direction perpendicular to the carrier table 202. That is, it rises in the V1 direction and descends in the opposite direction of the V1 direction. It should be noted that a plurality of holes T matching the morphology of the support pins P are also arranged in the electrostatic chuck for accommodating the liftable support pins P.
[0044] Please refer to Figure 2 and Figure 3 , the measurement unit 30 includes an EDX detection component 301. The working principle of the EDX detection component 301 is the same as that of an Energy Dispersive X-Ray Spectroscopy (EDX). The working principle is as follows: A high-energy electron beam E is used to strike the sample W. Then, part of the energy of the incident high-energy electron beam E will be transferred to the atoms of the sample W during the impact. After the electrons of the atoms in the sample W absorb this energy, they will break away from the atoms and transition to energy levels higher than the Fermi energy. At this time, the vacancies left in the electron orbit will be filled by electrons in higher-energy orbits. During this process, characteristic X-rays carrying the information of the sample W will be generated, and the excess energy will be released. It should be noted that for any atom, the energy difference between each energy level is determined, and the energy of the characteristic X-rays generated by the excitation of various atoms is determined. Therefore, by collecting the characteristic X-rays and analyzing their wavelengths or energies, information such as the type and content of the elements present in the sample W can be identified.
[0045] Based on this, the EDX detection component 301 provided in this embodiment includes a transmitter 3011 and a detector 3012. The transmitter 3011 is configured to emit a detection signal towards the sidewall of the wafer 10. The detection signal is an electron beam, which is used to bombard the sidewall of the wafer 10 to form characteristic X-rays carrying information of the wafer 10. The detector 3012 is configured to receive the characteristic signal emitted from the wafer 10; that is, characteristic X-rays. Moreover, the detector 3012 is further configured to identify the type of elements in the wafer 10 and their energy changes according to the received characteristic X-rays. Exemplarily, as Figure 4 shown, after the transmitter 3011 emits an electron beam towards the sidewall of the wafer 10, the detector 3012 analyzes four elements, namely silicon (Si), nitrogen (N), carbon (C), and oxygen (O), according to the received characteristic X-rays, and can obtain a curve graph showing the change of the energy intensity of these four elements over time. Therefore, the semiconductor device provided in this embodiment can obtain the thickness of the wafer 10 according to the change curve of the energy intensity of the elements and in combination with the moving speed of the wafer 10.
[0046] Specifically, please refer to Figure 2 , Figure 4 and Figure 5 , during the process of measuring the thickness of the wafer 10, the wafer 10 moves vertically under the action of the support pin P. Preferably, the wafer 10 moves uniformly in the vertically upward direction (V1 direction). When the top surface of the wafer 10 moves to the third position L3, the electron beam emitted by the transmitter 3011 just bombards the top sidewall of the wafer 10, and then the detector 3012 starts to receive characteristic X-rays. It should be noted that since the time between the start of the bombardment by the electron beam and the reception of the characteristic X-rays is very short, so Figure 4 although the moment of 0 shown in Figure 4The indicated 0 moment is the starting moment when the electron beam scans the wafer 10. After the detector 3012 first receives the characteristic X-rays, the wafer 10 continues to move upward at a constant speed, and during this process, the detector 3012 continuously receives the characteristic X-rays. Then, the energy intensity of each element is relatively high and shows an increasing trend. When the bottom surface of the wafer 10 moves to the third position L3, that is, when the top surface of the wafer 10 moves to the fourth position L4, the entire sidewall of the wafer 10 is bombarded by the electron beam in the vertical direction, which is equivalent to that the vertical scanning range of the electron beam is equal to the thickness of the wafer 10. When the wafer 10 continues to move upward, the electrons emitted by the emitter 3011 will not be able to bombard the sidewall of the wafer 10, so it is difficult for the detector 3012 to continue to receive the characteristic X-rays with high energy. Therefore, Figure 4 In the shown curve graph, at the moment t, the energy intensity of each of the elements starts to drop sharply. This shows that during the period from 0 to t, the electron beam keeps bombarding the sidewall of the wafer 10, and after the moment t, the electron beam does not bombard the sidewall of the wafer 10. Therefore, the thickness H of the wafer 10 satisfies the following formula: H = v·t; where v is the speed at which the wafer 10 moves at a constant speed.
[0047] As can be seen from the above, the semiconductor device provided in this embodiment obtains the scanning time according to the change of the element energy intensity, and then combines the moving speed of the wafer 10 to obtain the thickness of the wafer 10. This measurement method has no requirement for the surface topography of the wafer 10, does not need to use optical interference, is not easily affected by the etching polymer 10, etc., and does not need to perform wet cleaning on the wafer 10 before measurement. Therefore, using the semiconductor device to measure the thickness of the wafer 10 not only has high measurement accuracy but also high measurement efficiency, and can meet the requirement of timely and accurately monitoring the thickness of the wafer 10 in the etching chamber.
[0048] Furthermore, please continue to refer to Figure 2, when detecting the thickness of the etched wafer 10, since by-products such as polymer 101 will inevitably be formed during the etching process, and the polymer 101 adheres to the side walls and the upper and lower surfaces of the wafer 10, these polymers 101 will have a certain impact on energy transfer when the side walls of the wafer 10 are bombarded by the electron beam. Therefore, to improve the measurement accuracy of the thickness of the wafer 10, the measurement unit 30 provided in this embodiment further includes an ion gun 302. The ion gun 302 is located in the etching chamber 201, and is arranged on the side of the carrier 202 and is spaced from the EDX detection component 301. Among them, when the wafer 10 moves vertically, the ion gun 302 is used to emit an ion beam towards the side wall of the wafer 10 to remove the polymer 101 on the side wall of the wafer 10. Preferably, the ion beam emitted by the ion gun 302 is an argon ion. And argon ions are inert ions, which can avoid causing adverse effects on the wafer 10 when cleaning the polymer 101.
[0049] Please refer to Figure 5 and Figure 6 , since the wafer 10 moves vertically upward during the process of measuring the thickness of the wafer 10, in order to avoid the ion beam emitted by the ion gun 302 interfering with the electron beam emitted by the emitter 3011. The emitter 3011 is located above the ion gun 302, and the included angle α1 between the emission direction V2 of the emitter 3011 and the movement direction V1 of the wafer 10 is an acute angle, and the included angle α2 between the emission direction V3 of the ion gun 302 and the movement direction V1 of the wafer 10 is an obtuse angle. Based on this, when measuring the thickness of the wafer 10, when the top surface of the wafer 10 moves to the first position L1, the ion beam emitted by the ion gun 302 starts to scan the side wall of the wafer 10. As the wafer 10 continues to move, the ion beam continuously cleans the side wall of the wafer 10. And because the included angle α2 between the emission direction V3 of the ion gun 302 and the movement direction V1 of the wafer 10 is an obtuse angle, the emission direction V3 of the ion gun 302 is in an inclined downward direction, and the ion beam applies a force to the side wall of the wafer 10 in an inclined downward direction, which is beneficial to the rapid fall of the polymer 101 and ensures that the side wall of the wafer 10 has better cleanliness. And when the bottom surface of the wafer 10 moves to the first position L1, that is, when the top surface of the wafer 10 moves to the second position L2, the ion gun completes the cleaning of the side wall of the wafer 10, and at least removes the polymer 101 on the side wall of the wafer 10, which is beneficial to improving the measurement accuracy of the thickness of the wafer 10 by the subsequent EDX detection component 301.
[0050] As described above, when measuring the thickness of the wafer 10 provided in this embodiment, the support pin P is used to drive the wafer 10 to move upward, so that it is first purged by the ion gun 302 and then bombarded by the electron beam to obtain the thickness of the wafer 10. Therefore, in this embodiment, the area between the L1 position where the wafer 10 starts to receive the ion beam purge and the fourth position L4 where the wafer 10 finally receives the electron beam bombardment is defined as the measurement area Z. Based on this, since the movement speed of the wafer 10 into the measurement area Z has a direct impact on the accuracy and efficiency of the thickness measurement of the wafer 10, in order to balance the accuracy and efficiency of the thickness measurement of the wafer 10, the measurement unit 30 provided in this embodiment further includes a position sensor 303, and a first motor M1 and a second motor M2 are also provided in the carrier 202.
[0051] Specifically, please refer to Figure 2 , Figure 5 and Figure 7 . In the measurement area Z, when the movement speed of the wafer 10 is too fast, it is difficult to control the starting position and the ending position of the electron beam bombarding the side wall of the wafer 10 at the upper and lower surface positions of the wafer 10, which is likely to affect the accuracy of the movement time and further affect the detection accuracy of the thickness of the wafer 10. When the movement speed of the wafer 10 is too slow, although the detection accuracy of the thickness of the wafer 10 can be improved, the measurement time will be too long and the measurement efficiency will be low. Similarly, for the cleaning of the polymer 101 on the side wall of the wafer 10, if the movement speed of the wafer 10 is too fast, the cleaning effect will be affected; if the movement speed of the wafer 10 is too slow, the cleaning time will be prolonged and the efficiency will be reduced. Therefore, in this embodiment, the position sensor 303 is used to monitor whether the wafer 10 enters the measurement area Z; and the first motor M1 and the second motor M2 are used to adjust the speed of the wafer 10 in a segmented manner. Among them, the position sensor 303, the first motor M1, the second motor M2, the EDX detection component 301 and the ion gun 302 are all communicatively connected; and the first motor M1 and the second motor M2 are respectively connected to each support pin P and are both used to drive the support pin P to move.
[0052] Before the wafer 10 enters the measurement area Z, the first motor M1 is used to drive each of the support pins P so that the wafer 10 moves vertically upward at a first speed. When the position sensor 303 detects that the wafer 10 enters the measurement area Z, the position sensor 303 sends an enabling signal to the EDX detection component 301 and the ion gun 302 to start the EDX detection component 301 and the ion gun 302 and put them into the working state. At the same time, the position sensor 303 also sends signals to the first motor M1 and the second motor M2 to stop the first motor M1, and the second motor M2 is used to drive each of the support pins P so that the wafer 10 moves vertically upward at a second speed and successively passes through the purging of the ion beam and the bombardment of the electron beam until the wafer 10 leaves the measurement area Z. Then, when the EDX detection component 301 completes the thickness measurement of the wafer 10, the second motor M2 stops, and the first motor M1 is used to drive the support pins P to bring the wafer 10 back to the surface of the carrier table 202. Wherein, the first speed is greater than the second speed, and preferably, the second motor M2 is a piezoelectric motor to drive the wafer 10 to perform nanoscale displacement. In other words, before the wafer 10 enters the measurement area Z, the first motor M1 drives the wafer 10 to move vertically at a faster speed; and after the wafer 10 enters the measurement area Z, the second motor M2 drives the wafer 10 to move vertically at a slower nanoscale speed, which is beneficial for the ion gun 302 to clean the wafer 10 and the EDX detection component 301 to measure the thickness of the wafer 10. Therefore, the segmented speed regulation of the wafer 10 can not only improve the cleaning effect and measurement accuracy, but also improve the cleaning and measurement efficiency.
[0053] Preferably, as Figure 5 shown, the position sensor 303 includes, but is not limited to, a photoelectric position sensor. And the position sensor 303 has a transmitting part and a receiving part. The transmitting part is used to emit an optical signal, and the receiving part is used to receive the optical signal. The transmitting part and the receiving part are oppositely arranged and are respectively located on the horizontal line where the first position L1 is located. When the wafer 10 is below the first position L1, the receiving part can receive the optical signal emitted by the transmitting part, and when the top surface of the wafer 10 moves to the first position L1, the receiving part cannot receive the optical signal emitted by the transmitting part under the block of the wafer 10, which indicates that the wafer 10 enters the measurement area Z, and the position sensor 303 simultaneously sends signals to the first motor M1, the second motor M2, the EDX detection component 301 and the ion gun 302.
[0054] Preferably, as Figure 8As shown, in order to further improve the measurement accuracy of the wafer 10 and the cleaning effect of the wafer 10, the measuring unit 30 includes a plurality of EDX detection components 301 and a plurality of ion guns 302, so that in the process of measuring the thickness of the wafer 10, the plurality of EDX detection components 301 and the plurality of ion guns 302 can operate simultaneously. Among them, the plurality of EDX detection components 301 and the plurality of ion guns 302 are distributed in the measurement area Z at intervals. And the plurality of EDX detection components 301 are located at the same vertical height, and the plurality of ion guns 302 are also located at the same vertical height. Based on this, this embodiment does not limit the specific number of the EDX detection components 301 and the ion guns 302, which can be one, two, three or four, etc.
[0055] In summary, the semiconductor device provided in this embodiment is compatible with the etching unit 20 and the measuring unit 30. The measuring unit 30 measures the thickness of the wafer 10 based on the EDX element analysis principle, using the EDX detection component 301 to emit an electron beam to bombard the side wall of the wafer 10, and obtains the change in the energy intensity of each element through the received characteristic X-ray, and then obtains the time of scanning the side wall of the wafer 10; and then obtains the thickness of the wafer 10 according to the movement speed of the wafer 10. Not only does it reduce the requirements for the morphology and cleanliness of the wafer 10, but it also improves the measurement accuracy and efficiency, and does not need to be cleaned before measurement, and can realize timely and accurate monitoring of the thickness of the wafer 10 in the etching chamber 201.
[0056] Furthermore, the measuring unit 30 provided in this embodiment is also provided with an ion gun 302, which is used to clean the polymer 101 on the side wall of the wafer 10 before the EDX detection component 301 is used to measure the thickness of the wafer 10, so as to improve the measurement accuracy. In addition, the measuring unit 30 is also provided with a position sensor 303 to monitor whether the wafer 10 enters the measurement area Z. And, the first motor M1 and the second motor M2 are also provided in the carrier 202 of the etching unit 20, so that the first motor M1 is used to drive the wafer 10 before the wafer 10 enters the measurement area Z, so that the wafer 10 moves quickly; after the wafer 10 enters the measurement area Z, the second motor M2 is used to drive the wafer 10 to move slowly, thereby taking into account the purpose of improving the measurement accuracy and measurement efficiency of the thickness of the wafer 10.
[0057] In addition, it should also be recognized that although the present utility model has been disclosed above with preferred embodiments, the above embodiments are not intended to limit the present utility model. For any person skilled in the art, without departing from the scope of the technical solution of the present utility model, many possible changes and modifications can be made to the technical solution of the present utility model by using the technical content disclosed above, or it can be modified into equivalent embodiments with equivalent changes. Therefore, any simple modification, equivalent change and modification made to the above embodiments based on the technical essence of the present utility model without departing from the content of the technical solution of the present utility model still belong to the scope protected by the technical solution of the present utility model.
Claims
1. A semiconductor device, characterized in that, Including: An etching unit and a measurement unit; The etching unit includes an etching chamber, and a carrier is arranged in the etching chamber for carrying a wafer; The measurement unit includes an EDX detection component; the EDX detection component is located in the etching chamber and is arranged on the side of the carrier; Wherein, the carrier is further configured to drive the wafer to move vertically; and when the wafer moves vertically, the EDX detection component is configured to emit a detection signal towards the sidewall of the wafer and receive a characteristic signal, so as to obtain the thickness of the wafer according to the intensity change of the characteristic signal and the movement speed of the wafer.
2. The semiconductor device according to claim 1, wherein The measurement unit further includes an ion gun; the ion gun is located in the etching chamber, is arranged on the side of the carrier, and is spaced apart from the EDX detection component; Wherein, when the wafer moves vertically, the ion gun is configured to emit an ion beam towards the sidewall of the wafer to clean the sidewall of the wafer.
3. The semiconductor device according to claim 2, wherein The EDX detection component includes a transmitter and a detector; the transmitter is configured to emit the detection signal towards the sidewall of the wafer, and the detector is at least configured to receive the characteristic signal emitted by the wafer; wherein, the detection signal includes an electron beam; the characteristic signal includes characteristic X-rays.
4. The semiconductor device according to claim 3, wherein When measuring the thickness of the wafer, the wafer moves vertically upward; wherein, the transmitter is located above the ion gun, and the included angle between the emission direction of the transmitter and the movement direction of the wafer is an acute angle, and the included angle between the emission direction of the ion gun and the movement direction of the wafer is an obtuse angle.
5. The semiconductor device according to claim 2, wherein, There is a measurement area in the etching chamber, and when the carrier drives the wafer to move to the measurement area, the EDX detection component and the ion gun are respectively configured to emit the detection signal and the ion beam towards the sidewall of the wafer.
6. The semiconductor device according to claim 5, characterized in that, The measurement unit further includes a position sensor; the position sensor is arranged in the etching chamber and is communicatively connected to the EDX detection component and the ion gun respectively; Wherein, when the wafer moves to the measurement area, the position sensor is configured to obtain the position signal of the wafer and send an enabling signal to the EDX detection component and the ion gun.
7. The semiconductor device according to claim 6, wherein, A first motor and a second motor are arranged in the carrier; and the first motor and the second motor are communicatively connected to the position sensor respectively; Wherein, before the position sensor obtains the position signal, the first motor is configured to drive the carrier to drive the wafer to move; after the position sensor obtains the position signal, the first motor stops, and the second motor is configured to drive the carrier to drive the wafer to move; and the movement speed of the wafer driven by the second motor is less than the movement speed of the wafer driven by the first motor.
8. The semiconductor device according to claim 7, wherein, The second motor is a piezoelectric motor to drive the wafer to perform nanoscale displacement.
9. The semiconductor device according to claim 7, characterized in that, A plurality of support pins are arranged in the carrier stage; the plurality of support pins are respectively connected to the first motor and the second motor, and driven by the first motor or the second motor, the plurality of support pins are configured to support the wafer and drive the wafer to move vertically.
10. The semiconductor device according to claim 5, characterized in that, The measurement unit includes a plurality of the ion guns and a plurality of the EDX detection components, and the plurality of ion guns and the plurality of EDX detection components are spaced apart and distributed in the measurement area.