Wafer and photoelectric conversion unit

By staggering the photoelectric conversion units of different sizes on the wafer and alternately arranging them, the problems of low wafer utilization and high cost in the prior art are solved, and more efficient wafer utilization and cost reduction are achieved.

CN223157532UActive Publication Date: 2025-07-25HANGZHOU HIKMICRO SENSING TECH CO LTD
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Patent Information

Application Number
CN202422322446.8
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-09-23
Publication Date
2025-07-25
Estimated Expiration
2034-09-23

AI Technical Summary

Technical Problem

In existing two-color thermometers, two photoelectric signal conversion units usually need to be installed on different wafers, resulting in low wafer utilization and high cost.

Method used

A wafer is designed, including a plurality of first photoelectric conversion units and a plurality of second photoelectric conversion units, both of which are arranged in a staggered manner and the projection area of the first photoelectric conversion unit is larger than that of the second photoelectric conversion unit, and is arranged alternately to improve utilization.

Benefits of technology

By optimizing the wafer structure, the utilization rate of the wafer is improved and the manufacturing cost is reduced.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model provides a wafer and a photoelectric conversion unit. The wafer comprises a plurality of first photoelectric conversion units and a plurality of second photoelectric conversion units; the photoelectric conversion units are arranged in a staggered manner, the wafer is provided with a first surface, the first photoelectric conversion units and the second photoelectric conversion units are in one-to-one correspondence, and orthographic projections of the first photoelectric conversion units and the corresponding second photoelectric conversion units on the plane where the first surface is located are symmetrical about the same straight line; the projection area of the orthographic projection of the first photoelectric conversion unit on the plane where the first surface of the wafer is located is larger than the projection area of the orthographic projection of the second photoelectric conversion unit on the plane where the first surface of the wafer is located.
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Description

Technical Field

[0001] The present application belongs to the technical field of dual-color temperature measurement, and in particular, relates to a wafer and a photoelectric conversion unit. Background Art

[0002] Two-color temperature measurement is also called colorimetric temperature measurement. It uses the ratio of radiation intensity in two adjacent bands to measure temperature. When measuring, the two-color thermometer will simultaneously sense two different wavelengths of infrared radiation emitted by the object, and then determine the temperature of the object by calculating the ratio of the radiation intensity of the two wavelengths. The two-color thermometer generally includes two photoelectric signal conversion units for receiving and detecting light signals. Specifically, two photoelectric signal conversion units are used to realize the function of receiving and detecting light signals. The two photoelectric signal conversion units in the related art usually need to be set on different wafers, and then cut into different wafers respectively. Utility Model Content

[0003] According to an embodiment of the present application, a wafer is provided, the wafer comprising a plurality of first photoelectric conversion units and a plurality of second photoelectric conversion units; the photoelectric conversion units are staggered, the wafer has a first surface, the first photoelectric conversion units correspond to the second photoelectric conversion units one by one, and the orthographic projections of the first photoelectric conversion units and the corresponding second photoelectric conversion units on the plane where the first surface is located are symmetrical about the same straight line;

[0004] The projection area of the orthographic projection of the first photoelectric conversion unit on the plane where the first surface of the wafer is located is larger than the projection area of the orthographic projection of the second photoelectric conversion unit on the plane where the first surface of the wafer is located.

[0005] In some embodiments, the multiple first photoelectric conversion units included in the wafer are arranged into multiple rows, and the multiple second photoelectric conversion units included in the wafer are arranged into multiple rows; the row direction of the first photoelectric conversion units and the second photoelectric conversion units is parallel to the straight line; at least some rows of first photoelectric conversion units and at least some rows of second photoelectric conversion units are alternately arranged in a direction perpendicular to the straight line.

[0006] In some embodiments, each of the first photoelectric conversion units has a functional surface, the functional surface of the first photoelectric conversion unit has a first photosensitive region located in the middle, a first pad electrically connected to the first photosensitive region, and a second pad and a fourth pad electrically isolated from the first photosensitive region and the first pad, the fourth pad is electrically connected to the second pad, and the fourth pad is located on the side of the second pad away from the first photosensitive region; each of the second photoelectric conversion units has a functional surface, the functional surface of the second photosensitive conversion unit has a second photosensitive region located in the middle and a third pad connected to the second photosensitive region.

[0007] In some embodiments, the functional surfaces of each of the first photoelectric conversion units and the functional surfaces of each of the second photoelectric conversion units are both located on the first surface, and at least part of the first photoelectric conversion units and the second photoelectric conversion units of the wafer are arranged into multiple groups of photoelectric conversion units, and each group of photoelectric conversion units includes an adjacent first photoelectric conversion unit and a second photoelectric conversion unit;

[0008] Among them, the arrangement directions of each group of photoelectric conversion units are the same.

[0009] In some embodiments, the second pad of each of the first photoelectric conversion units is symmetric with the third pad of the corresponding second photoelectric conversion unit with respect to the straight line;

[0010] The perpendicular distance from the second pad of each first photoelectric conversion unit to a first straight line passing through the center of the first photosensitive area of the first photoelectric conversion unit where it is located and parallel to the straight line is equal to the perpendicular distance from the third pad of the corresponding second photoelectric conversion unit to a second straight line passing through the center of the second photosensitive area where it is located and parallel to the straight line.

[0011] In some embodiments, the second pad and the fourth pad of each first photoelectric conversion unit are located on the side of the first photosensitive area of the first photoelectric conversion unit where it is located close to the straight line, the third pad of each second photoelectric conversion unit is located on the side of the second photosensitive area of the second photoelectric conversion unit where it is located close to the straight line, and in the direction perpendicular to the straight line, the length of each second photoelectric conversion unit is less than the distance between the fourth pad and the first pad on the corresponding first photoelectric conversion unit, and greater than the distance between the edge of the first photosensitive area of the corresponding first photoelectric conversion unit facing away from the second pad and the second pad; or,

[0012] The second pad and the fourth pad of each first photoelectric conversion unit are located on the side of the first photosensitive area of the first photoelectric conversion unit where it is located away from the straight line, the third pad of each second photoelectric conversion unit is located on the side of the second photosensitive area of the second photoelectric conversion unit where it is located away from the straight line, and in the direction perpendicular to the straight line, the length of each second photoelectric conversion unit is less than the distance between the fourth pad and the first pad on the corresponding first photoelectric conversion unit, and greater than the distance between the edge of the first photosensitive area of the corresponding first photoelectric conversion unit facing away from the second pad and the second pad.

[0013] In some embodiments, the wafer has a second surface opposite to the first surface; the functional surfaces of at least part of the photoelectric conversion units among the multiple first photoelectric conversion units and the multiple second photoelectric conversion units are located on the first surface, and the functional surfaces of another part of the photoelectric conversion units are located on the second surface.

[0014] In some embodiments, the functional surfaces of the plurality of first photoelectric conversion units are located on one of the first surface and the second surface, and the functional surfaces of the plurality of second photoelectric conversion units are located on the other of the first surface and the second surface.

[0015] In some embodiments, a fifth pad that is electrically isolated from the first photosensitive region, the first pad, the second pad, and the fourth pad is provided on the functional surface of the first photoelectric conversion unit. The fifth pad and the second pad are located on opposite sides of the first photosensitive region. The first photoelectric conversion unit includes a connection wiring connecting the first photosensitive region and the first pad, and the fifth pad is electrically isolated from the connection wiring.

[0016] The second photoelectric conversion unit is provided with a sixth pad. The sixth pad and the third pad are located on opposite sides of the second photosensitive region. The sixth pad is electrically isolated from the second photosensitive region and the third pad.

[0017] Wherein, at least one of the second pad and the third pad is provided with a first type of welding bump; at least one of the fifth pad and the sixth pad is provided with a second type of welding bump.

[0018] In some embodiments, alignment marks are provided in the central region of the wafer.

[0019] Wherein, the central region of the wafer is set as one of the first photoelectric conversion unit and the second photoelectric conversion unit, and alignment marks are provided in the central region of the photoelectric conversion unit located in the central region of the wafer.

[0020] According to an embodiment of the present application, another photoelectric conversion unit is further provided. The photoelectric conversion unit has a functional surface, and the functional surface of the photoelectric conversion unit includes:

[0021] A first photosensitive region located in the middle;

[0022] A first pad electrically connected to the first photosensitive region;

[0023] A second pad electrically isolated from the first photosensitive region and the first pad;

[0024] A fourth pad electrically isolated from the first photosensitive region and the first pad. The fourth pad is electrically connected to the second pad, and the fourth pad is located on a side of the second pad away from the first photosensitive region.

[0025] In some embodiments, the second pad and the fourth pad are located on a side of the first photosensitive region away from the first pad.

[0026] In some embodiments, a fifth pad electrically isolated from the first photosensitive region, the first pad, the second pad, and the fourth pad is provided on the functional surface of the photoelectric conversion unit, and the fifth pad and the second pad are located on opposite sides of the first photosensitive region; the functional surface of the photoelectric conversion unit includes connection wirings connecting the first photosensitive region and the first pad, and the fifth pad is electrically isolated from the connection wirings.

[0027] In some embodiments, at least one of the second pad and the fifth pad is provided with a soldering bump.

[0028] According to an embodiment of the present application, there is further provided a photoelectric conversion unit having a functional surface, and the functional surface of the photoelectric conversion unit includes:

[0029] A second photosensitive region located in the middle;

[0030] A third pad electrically connected to the second photosensitive region;

[0031] A sixth pad electrically isolated from the second photosensitive region; wherein at least one of the third pad and the sixth pad is provided with a soldering bump.

[0032] In some embodiments, the third pad and the sixth pad are located on opposite sides of the second photosensitive region.

[0033] The main technical effects achieved by the embodiments of the present application are:

[0034] The wafer and the photoelectric conversion unit provided by the embodiments of the present application are beneficial to improving the utilization rate of the wafer and reducing costs by setting the wafer to include the first photoelectric conversion unit and the second photoelectric conversion unit of different sizes. Description of the Drawings

[0035] Figure 1 The layout of the first surface of a wafer provided by an embodiment of the present application;

[0036] Figure 2 The layout of a group of photoelectric conversion units provided by an embodiment of the present application;

[0037] Figure 3 The layout of another group of photoelectric conversion units provided by an embodiment of the present application;

[0038] Figure 4 A layout diagram of an arrangement of some relatively first photoelectric conversion units provided by an embodiment of the present application;

[0039] Figure 5Another layout schematic diagram of a partially opposite first optoelectronic conversion unit provided by an embodiment of the present application;

[0040] Figure 6 A top view of a first surface of a first optoelectronic conversion unit provided by an embodiment of the present application;

[0041] Figure 7 A top view of a first surface of a second optoelectronic conversion unit provided by an embodiment of the present application;

[0042] Figure 8 A top view of a first surface of a first optoelectronic conversion unit provided by an embodiment of the present application, with welding bumps provided thereon;

[0043] Figure 9 A top view of a first surface of a second optoelectronic conversion unit provided by an embodiment of the present application, with welding bumps provided thereon;

[0044] Figure 10 Another layout of a first surface of a wafer provided by an embodiment of the present application;

[0045] Figure 11 Another layout of a first surface of a wafer provided by an embodiment of the present application;

[0046] Figure 12 Another layout of a first surface of a wafer provided by an embodiment of the present application;

[0047] Figure 13 Another layout of a first surface of a wafer provided by an embodiment of the present application;

[0048] Figure 14 Another layout of a second surface of a wafer provided by an embodiment of the present application. Detailed implementation manners

[0049] Here, the technical solutions in the embodiments (or "implementation manners") of the present application will be clearly and completely described in conjunction with the accompanying drawings. When the following description involves the accompanying drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements.

[0050] If there are terms related to directional indications or positional relationships in the embodiments of the present application (such as up, down, left, right, front, back, inside, outside, top, bottom, center, vertical, horizontal, longitudinal, lateral, length, width, counterclockwise, clockwise, axial, radial, circumferential, etc.), such terms are only used to explain the relative positional relationships, motion conditions, etc. between components in a specific posture; if the specific posture changes, the directional indication or positional relationship will also change accordingly. In addition, terms such as "first" and "second" involved in the embodiments of the present application are only for the purpose of convenient description and cannot be construed as indicating or implying relative importance.

[0051] The following will describe the wafer and the photoelectric conversion unit in detail with reference to the attached Figures 1 to 14 Drawings.

[0052] The wafer provided by the present application includes a plurality of first photoelectric conversion units 11 and a plurality of second photoelectric conversion units 12; the photoelectric conversion units are arranged staggeredly. The wafer has a first surface S1. The first photoelectric conversion units 11 and the second photoelectric conversion units 12 are in one-to-one correspondence, and the orthographic projections of each of the first photoelectric conversion units 11 and the corresponding second photoelectric conversion units 12 on the plane where the first surface S1 is located are symmetric about the same straight line R.

[0053] Among them, the projected area of the first photoelectric conversion unit on the plane where the first surface S1 of the wafer is located is larger than the projected area of the second photoelectric conversion unit 12 on the plane where the first surface of the wafer is located.

[0054] The photoelectric conversion units are arranged staggeredly so that the orthographic projections of the photoelectric conversion units on the plane where the first surface S1 is located do not overlap each other.

[0055] It should be noted that in some embodiments, the straight line R may be a straight line passing through the center of the first surface S1 of the wafer. Of course, the straight line R may also not pass through the center of the first surface of the wafer.

[0056] In some embodiments, the multiple first photoelectric conversion units 11 included in the wafer are arranged in multiple rows, and the multiple second photoelectric conversion units 12 included in the wafer are arranged in multiple rows. The row directions of the first photoelectric conversion units 11 and the second photoelectric conversion units 12 are parallel to the straight line R; at least some rows of the first photoelectric conversion units 11 and at least some rows of the second photoelectric conversion units 12 are alternately arranged in a direction perpendicular to the straight line R.

[0057] Among them, the first optoelectronic conversion units 11 in multiple rows and the second optoelectronic conversion units 12 in each row can be alternately arranged one by one, or alternately arranged in multiple rows, or all the first optoelectronic conversion units 11 in all rows can be arranged together, and all the second optoelectronic conversion units 12 in all rows can be arranged together. The row of the first optoelectronic conversion units 11 in all rows that is close to the second optoelectronic conversion unit 12 is adjacently arranged with the row of the second optoelectronic conversion units 12 in all rows that is close to the first optoelectronic conversion unit 11, or in other alternating manners.

[0058] Of course, in some other embodiments, the multiple first optoelectronic conversion units and the multiple second optoelectronic conversion units included in the wafer may not be arranged in rows. For example, the first optoelectronic conversion unit and the second optoelectronic conversion unit are both provided in at least one row, and specific settings can be made according to needs.

[0059] The wafer further includes a second surface opposite to the first surface. Both the first optoelectronic conversion unit and the second optoelectronic conversion unit may include a functional surface having a photosensitive region. In some embodiments, the functional surfaces of all the optoelectronic conversion units included in the wafer may be located on the same surface, such as Figure 1 , Figure 10 , Figure 11 and Figure 12 the wafers shown. In some other wafers, for all the optoelectronic conversion units included in the wafer, the functional surfaces of some optoelectronic conversion units are located on the first surface, and the functional surfaces of another part of the optoelectronic conversion units are located on the second surface, such as Figure 13 and Figure 14 the wafers shown.

[0060] First, in combination with Figures 1 to 12 , the implementation manner in which the functional surfaces of all the optoelectronic conversion units included in the wafer can be located on the same surface will be described.

[0061] Please refer to Figure 1 , and when necessary, in combination with Figures 2 to 12As shown, the wafer 100 has a first surface S1. The projection area of the first photoelectric conversion unit 11 on the plane where the first surface S1 of the wafer 100 is located is greater than the projection area of the second photoelectric conversion unit 12 on the plane where the first surface S1 of the wafer 100 is located. Each of the first photoelectric conversion units 11 has a functional surface 1101, and the functional surface 1101 of the first photoelectric conversion unit 11 has a first photosensitive area 110 located in the middle, a first pad 111 electrically connected to the first photosensitive area 110, and a second pad 115 and a fourth pad 112 electrically isolated from the first photosensitive area 110 and the first pad 111, the fourth pad 112 is electrically connected to the second pad 115, and the fourth pad 112 is located on the side of the second pad 115 away from the first photosensitive area 110, so that the subsequent first photoelectric conversion unit is electrically connected to the outside through the second pad 115, such as setting wire bonding. Each of the second photoelectric conversion units 12 has a functional surface 1201. The functional surface 1201 of the second photoelectric conversion unit 12 has a second photosensitive region 120 located in the middle and a third pad 122 connected to the second photosensitive region 120 .

[0062] The first photosensitive area 110 and the second photosensitive area 120 may be equal in shape and size. For example, they may be circular areas of the same size, or square, rectangular, elliptical or other areas of the same size.

[0063] In some embodiments, at least part of the first photoelectric conversion units and the second photoelectric conversion units of the wafer are arranged into a plurality of groups of photoelectric conversion units, each group of photoelectric conversion units includes one adjacent first photoelectric conversion unit and one adjacent second photoelectric conversion unit.

[0064] for example Figure 1 As shown, in some embodiments, all the photoelectric conversion units included in the wafer 100 are arranged in groups, wherein each first photoelectric conversion unit 11 has an adjacent second photoelectric conversion unit 12 as a group, and each second photoelectric conversion unit 12 has an adjacent first photoelectric conversion unit 11 as a group. For another example, Figure 10 All the photoelectric conversion units included in the wafer 200 are also arranged in groups.

[0065] Combination Figure 2 As shown, in some embodiments, in the same group of photoelectric conversion units, the second pad 111 of the first photoelectric conversion unit 11 and the third pad 122 of the second photoelectric conversion unit may be located on opposite sides of the first photosensitive region 110 and the second photosensitive region 120 and correspond to each other.

[0066] Combination Figure 3As shown, in some other embodiments, in the same group of photoelectric conversion units, the second pad 111 of the first photoelectric conversion unit 11 and the third pad 122 of the second photoelectric conversion unit may be located between the first photosensitive area 110 and the second photosensitive area 120 and correspond to each other.

[0067] In some other embodiments, some of the photoelectric conversion units may not be arranged in groups. For example, Figure 11 and Figure 12 as shown, Figure 11 the first photoelectric conversion units shown in row R1 as shown may not be grouped with other photoelectric conversion units. As Figure 12 shown in row R2 as shown, the second photoelectric conversion units may not be grouped with other photoelectric conversion units. Similar to the wafers 100 and 200, the Figure 11 wafer 300 shown and Figure 12 the wafer 400 shown are two wafers that can be bonded to each other.

[0068] In some embodiments, the arrangement directions of the groups of photoelectric conversion units are the same, which is convenient for step-by-step preparation using a lithography machine.

[0069] For example, as Figure 1 shown, all the photoelectric conversion units included in the wafer 100 are grouped and distributed, and the arrangement directions of the first photoelectric conversion unit 11 and the second photoelectric conversion unit 12 in each group of photoelectric conversion modules are the same, so that the wafer 100 includes multiple rows of first photoelectric conversion units 11 and multiple rows of second photoelectric conversion units 12. The multiple rows of the first photoelectric conversion units 11 and the multiple rows of the second photoelectric conversion units 12 are alternately arranged. For example, Figure 1 as shown, the multiple rows of the first photoelectric conversion units 11 and the multiple rows of the second photoelectric conversion units 12 are alternately arranged one by one. For another example, Figure 10 the other wafer 200 shown.

[0070] Both the wafer 100 and the wafer 200 can be used to prepare a two-color temperature measuring device.

[0071] It can be understood that the structures of the wafers 100 and 200 are basically the same. The difference between them is that when the first surfaces S1 of the wafer 100 and the first surface S2 of the wafer 200 face each other, the first photoelectric conversion unit 11 of the wafer 100 can just correspond to the second photoelectric conversion unit 12 of the wafer 200. The second photoelectric conversion unit 12 of the wafer 100 can just correspond to the first photoelectric conversion unit 11 of the wafer 200. Among them, the center of the first photosensitive area of the corresponding first photoelectric conversion unit can be aligned with the center of the second photosensitive area of the corresponding second photosensitive conversion unit. The wafers 100 and 200 can be correspondingly bonded and then sliced to form a plurality of stacked photoelectric conversion devices. The photoelectric conversion device includes stacked first and second photoelectric conversion units. The photoelectric conversion device can be a two-color temperature measuring device. The first photoelectric conversion unit 11 and the second photoelectric conversion unit 12 can be respectively used to receive and detect two different wavelength bands of optical signals emitted by the object to be measured, such as two different wavelength bands of infrared radiation signals.

[0072] Certainly, in some other embodiments, all the photoelectric conversion units included in the wafer are arranged in groups, and the arrangement directions of the first photoelectric conversion unit 11 and the second photoelectric conversion unit 12 in each group of photoelectric conversion units may not be exactly the same. For example, for all the photoelectric conversion units included in the wafer, every two rows of the first photoelectric conversion units and every two rows of the second photoelectric conversion units are arranged alternately.

[0073] Combined with Figure 4 and Figure 5 As shown, in some embodiments, the second pad 115 of each first photoelectric conversion unit 11 is symmetric about the straight line R with the third pad 122 of the corresponding second photoelectric conversion unit 12.

[0074] The perpendicular distance d1 from the second pad 115 of each first photoelectric conversion unit 11 to the first straight line r1 passing through the center O1 of the first photosensitive area 110 of the first photoelectric conversion unit 11 where it is located and parallel to the straight line R is equal to the perpendicular distance d2 from the third pad 122 of the corresponding second photoelectric conversion unit 12 to the second straight line r2 passing through the center O2 of the second photosensitive area 210 of the second photoelectric conversion unit 12 where it is located and parallel to the straight line. That is, d1 and d2 are equal in the figure.

[0075] As Figure 5As shown, in some embodiments, the second pad 115 and the fourth pad 112 of each of the first photoelectric conversion units 11 are located on the side of the first photosensitive area 110 of the first photoelectric conversion unit 11 close to the straight line R, and the third pad 122 of each of the second photoelectric conversion units 12 is located on the side of the second photosensitive area 120 of the second photoelectric conversion unit 12 close to the straight line R, and in the direction L perpendicular to the straight line R, the length L1 of each of the second photoelectric conversion units 12 is smaller than the distance L3 between the fourth pad 112 and the first pad 111 on the corresponding first photoelectric conversion unit 11.

[0076] This arrangement enables the first pad 111 and the fourth pad 112 of the first photoelectric conversion unit to be exposed outside the second photoelectric conversion unit 12 in the subsequently formed photoelectric conversion device including the stacked first photoelectric conversion unit 11 and the second photoelectric conversion unit 12, thereby facilitating the arrangement of external lead-out structures such as wire bonding.

[0077] In the direction L perpendicular to the straight line R, the length L1 of each second photoelectric conversion unit 12 may be greater than the distance L2 between the edge of the first photosensitive region 110 on the corresponding first photoelectric conversion unit 11 away from the second pad 115 and the second pad 115, so that in the subsequently formed photoelectric conversion device including the stacked first photoelectric conversion unit 11 and the second photoelectric conversion unit 12, the first photosensitive region and the second photosensitive region can be aligned, and the second pad 115 can correspond to the corresponding third pad 122.

[0078] like Figure 4 As shown, in other embodiments, the second pad 115 and the fourth pad 112 of each first photoelectric conversion unit 11 are located on the side of the first photosensitive region 110 of the first photoelectric conversion unit 11 away from the straight line R, and the third pad 122 of each second photoelectric conversion unit 12 is located on the side of the second photosensitive region 120 of the second photoelectric conversion unit 12 away from the straight line R, and in the direction L perpendicular to the straight line R, the length L1 of each second photoelectric conversion unit 12 is less than the distance L3 between the fourth pad 112 and the first pad 111 on the corresponding first photoelectric conversion unit 11. This arrangement enables the first pad 111 and the fourth pad 112 of the first photoelectric conversion unit to be exposed outside the second photoelectric conversion unit 12 in the subsequently formed photoelectric conversion device including the stacked first photoelectric conversion unit 11 and the second photoelectric conversion unit 12, so as to facilitate the arrangement of external lead-out structures such as wire bonding.

[0079] Wherein, in the direction L perpendicular to the straight line R, the length L1 of each of the second photoelectric conversion units 12 may be greater than the distance L2 between the edge of the first photosensitive region 110 of the corresponding first photoelectric conversion unit 11 on the side away from the second pad 115 and the second pad 115, so as to ensure that in the subsequent formed photoelectric conversion device including the stacked first and second photoelectric conversion units, while ensuring the alignment of the first photosensitive region and the second photosensitive region, it is ensured that the second pad 115 can correspond to the corresponding third pad 122.

[0080] In some embodiments, the first photoelectric conversion unit 11 is provided with a fifth pad 113 that is electrically isolated from the first photosensitive region 110, the first pad 111, the second pad 115, and the fourth pad 112. The fifth pad 113 and the second pad 115 may be located on opposite sides of the first photosensitive region 110. The first photoelectric conversion unit 11 includes a connection wiring 117 connecting the first photosensitive region 110 and the first pad 111, and the fifth pad 113 is electrically isolated from the connection wiring 117.

[0081] The second photoelectric conversion unit 12 is provided with a sixth pad 121, and the sixth pad 121 and the third pad 122 are located on opposite sides of the second photosensitive region 120. The sixth pad 121 is electrically isolated from the second photosensitive region 120 and the third pad 122.

[0082] Wherein, at least one of the second pad 115 and the third pad 122 is provided with a first type of soldering bump. At least one of the fifth pad 113 and the sixth pad 121 is provided with a second type of soldering bump.

[0083] Combined Figure 8 and Figure 9 As shown, the first type of soldering bump may include a soldering bump 116 provided on the second pad 115 on the first surface S1 of the first photoelectric conversion unit 11, and a soldering bump 124 provided on the third pad 122 on the first surface S2 of the second photoelectric conversion unit 12. The second type of soldering bump may include a solder ball bump 114 provided on the fifth pad 113, and a solder ball bump 123 provided on the sixth pad 121.

[0084] In some other embodiments, the first type of soldering bump may also be provided only at the corresponding position on the first surface of the first photoelectric conversion unit, or only at the corresponding position on the first surface of the second photoelectric conversion unit.

[0085] It should be noted that for a photovoltaic device formed on a wafer according to the present application, which includes a first photovoltaic conversion unit 11 and a second photovoltaic conversion unit 12 stacked, and the first surface of the first photovoltaic conversion unit 11 faces the second photovoltaic conversion unit 12, while the first type of solder bump realizes the spaced support of the second photovoltaic conversion unit 12 on the first photovoltaic conversion unit 11, it can also realize the electrical connection between the third pad 122 of the second photovoltaic conversion unit 12 and the second pad 115, so that the third pad 122 of the second photovoltaic conversion unit 12 can be led out from the side of the first surface of the first photovoltaic conversion unit 11.

[0086] In some embodiments, alignment marks are provided in the central region of the wafer.

[0087] In some embodiments, the central region of the wafer is set as the first photovoltaic conversion unit, and the alignment marks are provided in the central region of the first photovoltaic conversion unit.

[0088] For example Figure 12 As shown, the central region of the wafer 300 is set as the first photovoltaic conversion unit 11, and alignment marks 101 are provided at the center of the second photovoltaic conversion unit 12 located in the central region of the wafer 300.

[0089] The alignment marks 101 can be cross marks or other marks that can be recognized by machines such as bonders for alignment.

[0090] In other embodiments, the central region of the wafer is set as the second photovoltaic conversion unit, and the alignment marks are provided in the central region of the second photovoltaic conversion unit.

[0091] For example Figure 10 As shown, the central region of the wafer 400 is set as the second photovoltaic conversion unit 12, and alignment marks 201 are provided at the center of the first photovoltaic conversion unit 11 located in the wafer 400.

[0092] The alignment marks 201 can be cross marks or other marks that can be recognized by machines such as bonders for alignment.

[0093] Of course, in other embodiments, the central region of the wafer may not be set as the photovoltaic conversion unit, and the alignment marks may not be provided in the central region of the photovoltaic conversion unit.

[0094] It should be noted that the above-mentioned wafers can be prepared by a lithography machine. The above-mentioned wafers adopt a set of photovoltaic conversion units including two photovoltaic conversion units. During the preparation process using a lithography machine, the two photovoltaic conversion units of a set of photovoltaic conversion units can be formed by using a mask structure including two regions corresponding to the two photovoltaic conversion units respectively. Especially for the case where all the photovoltaic conversion units in the wafer are arranged in groups, the wafer can be prepared by using a single mask structure to form a wafer including multiple groups of photovoltaic conversion units with two different sizes. And for two wafers that can be bonded to each other, such as wafer 100 and wafer 200, the corresponding photosensitive regions and bonding pads can be formed by using the same mask structure, further saving the cost of wafer preparation.

[0095] For example, when preparing wafer 100 and similar wafers, specifically, wafer 100 can be loaded into a lithography machine; the lithography machine performs sequential step-by-step exposure on a plurality of first exposure regions S12 on the wafer 100 to form the first photovoltaic conversion module 1001. Among them, the plurality of first exposure regions S12 are arranged on the wafer 100 according to a preset rule.

[0096] When preparing wafer 200 and similar wafers, specifically, wafer 200 can be loaded into a lithography machine; the lithography machine can perform sequential step-by-step exposure on a plurality of second exposure regions S21 on the wafer 200 to form corresponding multiple photovoltaic conversion modules. The plurality of second exposure regions S21 are arranged on the wafer 200 according to a preset rule.

[0097] The shapes and sizes of the first exposure region S12 and the second exposure region S21 are equal. Correspondingly, the photovoltaic conversion modules formed in wafer 100 and wafer 200 are also the same.

[0098] The following combines Figure 13 and Figure 14 , and corresponding descriptions are made for the implementation manner in which the functional surfaces of at least some of the plurality of first photovoltaic conversion units 11 and the plurality of second photovoltaic conversion units 12 are located on the first surface S1, and the functional surfaces of another part of the photovoltaic conversion units 12 are located on the second surface S12. Among them, for the specific structures and functional surfaces of the first photovoltaic conversion unit 11 and the second photovoltaic conversion unit 12, reference can be made to the above relevant descriptions, and details are not elaborated here. The following mainly describes the differences.

[0099] As Figure 13 and Figure 14 shown, the wafer 500 has a first surface S1 and a second surface S2 facing away from each other.

[0100] In some embodiments, each of the first photovoltaic conversion units 11 may be arranged in multiple rows parallel to the straight line R. Each of the second photovoltaic conversion units 12 may also be arranged in multiple rows parallel to R. The multiple first photovoltaic conversion units 11 and the multiple rows of photovoltaic conversion units 12 may be alternately arranged one by one, or other alternate arrangements may be adopted.

[0101] In some embodiments, the functional surfaces of the multiple first photovoltaic conversion units 11 may be located on one of the first surface S1 and the second surface S2, and the functional surfaces of the multiple second photovoltaic conversion units 12 may be located on the other of the first surface S1 and the second surface S2.

[0102] For example, Figure 13 and Figure 14 as shown, the functional surfaces of the multiple first photovoltaic conversion units 11 may be located on the first surface S1, and the functional surfaces of the multiple second photovoltaic conversion units 12 may be located on the second surface S2. For another example, Figure 13 and Figure 14 in the wafer 500 shown, the multiple first photovoltaic conversion units 11 and the multiple rows of photovoltaic conversion units 12 may be alternately arranged one by one.

[0103] Of course, in some other embodiments, the functional surfaces of some of the first photovoltaic conversion units and the functional surfaces of some of the second functional conversion units may be located on the same surface. The first photovoltaic conversion units and the second photovoltaic conversion units with functional surfaces on the same surface may also have at least some of them arranged in groups, that is, at least some of the first photovoltaic conversion units with functional surfaces on the same surface have correspondingly grouped second photovoltaic conversion units. The first photovoltaic conversion units and the second photovoltaic conversion units of each group of photovoltaic conversion units may be formed by exposure using the same mask structure as described in the above embodiments. For example, in some embodiments, the first photovoltaic conversion units and the second photovoltaic conversion units with functional surfaces on the same surface may both be arranged in groups. And the arrangement directions of the first photovoltaic conversion units and the second photovoltaic conversion units of each group of photovoltaic conversion units may be the same.

[0104] In some embodiments, alignment marks may be provided in the central region of the wafer 500.

[0105] For example, in some embodiments, the central region of the wafer is set as a first photovoltaic conversion unit, and the alignment mark is provided in the central region of the first photovoltaic conversion unit.

[0106] In some other embodiments, the central region of the wafer 500 is set as a second photovoltaic conversion unit 12, and an alignment mark 502 is provided in the central region of the second photovoltaic conversion unit 12, for example Figure 14 as shown. The alignment mark may also be provided at the central position of the first surface of the wafer 500, such as a third alignment mark 501.

[0107] Of course, in some other embodiments, the central area of the wafer may not be set as the photoelectric conversion unit, and the alignment mark may not be set in the central area of the photoelectric conversion unit.

[0108] The wafer 500 can be formed into a photoelectric conversion unit by using a photolithography process. In the process of preparing the wafer 500, the wafer 500 can be loaded into a photolithography machine, and the photolithography machine exposes the exposure area S51 on the first surface S1 of the wafer 500 and the exposure area S52 on the second surface S2 to form a first photoelectric conversion unit 11 and a second photoelectric conversion unit 12. The photoelectric conversion units on one surface of the wafer 500 can be prepared in sequence, and then the wafer can be turned over to prepare the photoelectric conversion units on the other side of the wafer 500 in sequence. For example, the first photoelectric conversion unit 11 on the first surface S1 of the wafer 500 can be prepared in sequence, and then the second photoelectric conversion unit 12 on the second surface S2 of the wafer can be prepared in sequence.

[0109] The present application further provides a photoelectric conversion unit. Figure 6 and Figure 8 As shown, the photoelectric conversion unit 11 has a functional surface 1101, and the functional surface 1101 of the photoelectric conversion unit 11 may include a first photosensitive region 110 located in the middle, a first pad 111, a second pad 115, and a fourth pad 112. The first pad is electrically connected to the first photosensitive region 110; the second pad 115 is electrically isolated from the first photosensitive region 110 and the first pad 111; the fourth pad 112 is electrically isolated from the first photosensitive region 110 and the first pad 111, the fourth pad 112 is electrically connected to the second pad 115, and the fourth pad 112 is located on the side of the second pad 115 away from the first photosensitive region 110.

[0110] In some embodiments, the second pad 115 and the fourth pad 112 are located on a side of the first photosensitive region 110 away from the first pad 111 .

[0111] In some embodiments, the functional surface 1101 of the photoelectric conversion unit 11 is provided with a fifth pad 113 which is electrically isolated from the first photosensitive region 110, the first pad 111, the second pad 115 and the fourth pad 112, and the fifth pad 113 and the second pad 115 are located on opposite sides of the first photosensitive region 110; the functional surface 1101 of the photoelectric conversion unit 11 includes a connecting wiring 117 connecting the first photosensitive region 110 and the first pad 111, and the fifth pad 113 is electrically isolated from the connecting wiring 117.

[0112] In some embodiments, at least one of the second pad 115 and the fifth pad 113 is provided with a solder bump. For example, the second pad 115 is provided with a solder bump 116, and the fifth pad 113 is provided with a solder bump 114.

[0113] The photoelectric conversion unit 11 can be formed by cutting the above-mentioned wafers 100, 200 or similar wafers. Or it can be formed by cutting a wafer on which only a plurality of photoelectric conversion units 11 are arranged.

[0114] The present application further provides a photoelectric conversion unit. As Figure 7 shown, the photoelectric conversion unit 12 has a functional surface 1201. The functional surface 1201 of the photoelectric conversion unit 12 includes a second photosensitive region 120 located in the middle, a third pad 122 and a sixth pad 121. The third pad 122 is electrically connected to the second photosensitive region 120. The sixth pad 121 is electrically isolated from the second photosensitive region 120; wherein, at least one of the third pad 122 and the sixth pad 121 is provided with solder bumps 124, 123.

[0115] In some embodiments, the third pad 122 and the sixth pad 121 are located on opposite sides of the second photosensitive region 120.

[0116] The photoelectric conversion unit 12 can be formed by cutting the above-mentioned wafers 100, 200 or similar wafers. Or it can be formed by cutting a wafer on which only a plurality of photoelectric conversion units 12 are arranged.

[0117] It should be noted that the technical solutions or technical features described in the above embodiments can be combined or supplemented with each other without conflict. The scope of protection of the present application is not limited to the precise structures described in the above embodiments and shown in the drawings. All modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present application shall be included within the scope of protection of the present application.

Claims

1. A wafer, characterized in that, The wafer comprises a plurality of first photoelectric conversion units and a plurality of second photoelectric conversion units; the photoelectric conversion units are staggered, the wafer has a first surface, the first photoelectric conversion units correspond to the second photoelectric conversion units one by one, and the orthographic projections of the first photoelectric conversion units and the corresponding second photoelectric conversion units on the plane where the first surface is located are symmetrical about the same straight line; The projection area of the orthographic projection of the first photoelectric conversion unit on the plane where the first surface of the wafer is located is larger than the projection area of the orthographic projection of the second photoelectric conversion unit on the plane where the first surface of the wafer is located.

2. The wafer according to claim 1, characterized in that, The multiple first photoelectric conversion units included in the wafer are arranged into multiple rows, and the multiple second photoelectric conversion units included in the wafer are arranged into multiple rows; the row direction of the first photoelectric conversion units and the second photoelectric conversion units is parallel to the straight line; at least some rows of first photoelectric conversion units and at least some rows of second photoelectric conversion units are alternately arranged in a direction perpendicular to the straight line.

3. The wafer according to claim 1 or 2, characterized in that, Each of the first photoelectric conversion units has a functional surface, the functional surface of the first photoelectric conversion unit has a first photosensitive area located in the middle, a first pad electrically connected to the first photosensitive area, and a second pad and a fourth pad electrically isolated from the first photosensitive area and the first pad, the fourth pad is electrically connected to the second pad, and the fourth pad is located on the side of the second pad away from the first photosensitive area; each of the second photoelectric conversion units has a functional surface, the functional surface of the second photosensitive conversion unit has a second photosensitive area located in the middle and a third pad connected to the second photosensitive area.

4. The wafer according to claim 3, wherein, The functional surface of each of the first photoelectric conversion units and the functional surface of each of the second photoelectric conversion units are both located on the first surface, and at least part of the first photoelectric conversion units and the second photoelectric conversion units of the wafer are arranged into a plurality of groups of photoelectric conversion units, and each group of photoelectric conversion units includes a first photoelectric conversion unit and a second photoelectric conversion unit that are adjacent to each other; Wherein, the arrangement directions of the photoelectric conversion units of each group are the same.

5. The wafer according to claim 1, wherein, The second pad of each first photoelectric conversion unit and the corresponding third pad of the second photoelectric conversion unit are symmetrical about the straight line; The vertical distance from the second pad of each of the first photoelectric conversion units to the first straight line passing through the center of the first photosensitive area of the first photoelectric conversion unit and parallel to the straight line is equal to the vertical distance from the third pad of the corresponding second photoelectric conversion unit to the second straight line passing through the center of the second photosensitive area and parallel to the straight line.

6. The wafer according to claim 5, wherein, The second pad and the fourth pad of each of the first photoelectric conversion units are located on the side of the first photosensitive region of the corresponding first photoelectric conversion unit close to the straight line, and the third pad of each of the second photoelectric conversion units is located on the side of the second photosensitive region of the corresponding second photoelectric conversion unit close to the straight line. And in the direction perpendicular to the straight line, the length of each of the second photoelectric conversion units is less than the distance between the fourth pad and the first pad on the corresponding first photoelectric conversion unit, and greater than the distance between the edge of the first photosensitive region of the corresponding first photoelectric conversion unit facing away from the second pad and the second pad; or, The second pad and the fourth pad of each of the first photoelectric conversion units are located on the side of the first photosensitive region of the corresponding first photoelectric conversion unit facing away from the straight line, and the third pad of each of the second photoelectric conversion units is located on the side of the second photosensitive region of the corresponding second photoelectric conversion unit facing away from the straight line. And in the direction perpendicular to the straight line, the length of each of the second photoelectric conversion units is less than the distance between the fourth pad and the first pad on the corresponding first photoelectric conversion unit, and greater than the distance between the edge of the first photosensitive region of the corresponding first photoelectric conversion unit facing away from the second pad and the second pad.

7. The wafer according to claim 3, wherein The wafer has a second surface opposite to the first surface; the functional surfaces of at least some of the plurality of first photoelectric conversion units and the plurality of second photoelectric conversion units are located on the first surface, and the functional surfaces of the other part of the photoelectric conversion units are located on the second surface.

8. The wafer according to claim 7, wherein The functional surfaces of the plurality of first photoelectric conversion units are located on one of the first surface and the second surface, and the functional surfaces of the plurality of second photoelectric conversion units are located on the other of the first surface and the second surface.

9. The wafer according to claim 3, wherein The functional surface of the first photoelectric conversion unit is provided with a fifth pad that is electrically isolated from the first photosensitive region, the first pad, the second pad, and the fourth pad; the fifth pad and the second pad are located on opposite sides of the first photosensitive region; the first photoelectric conversion unit includes a connection wiring connecting the first photosensitive region and the first pad, and the fifth pad is electrically isolated from the connection wiring; The second photoelectric conversion unit is provided with a sixth pad, and the sixth pad and the third pad are located on opposite sides of the second photosensitive region; the sixth pad is electrically isolated from the second photosensitive region and the third pad; Wherein, at least one of the second pad and the third pad is provided with a first type of welding bump; at least one of the fifth pad and the sixth pad is provided with a second type of welding bump.

10. The wafer according to claim 1, wherein, Alignment marks are provided in the central region of the wafer; Wherein, the central region of the wafer is set as one of the first photoelectric conversion unit and the second photoelectric conversion unit, and alignment marks are provided in the central region of the photoelectric conversion unit located in the central region of the wafer.

11. A photoelectric conversion unit, characterized in that, The photoelectric conversion unit has a functional surface, and the functional surface of the photoelectric conversion unit includes: A first photosensitive region located in the middle; A first pad, electrically connected to the first photosensitive region; a second pad, electrically isolated from the first photosensitive region and the first pad; The fourth pad is electrically isolated from the first photosensitive area and the first pad, the fourth pad is electrically connected to the second pad, and the fourth pad is located on a side of the second pad away from the first photosensitive area.

12. The photoelectric conversion unit according to claim 11, wherein The second pad and the fourth pad are located on a side of the first photosensitive region away from the first pad.

13. The photoelectric conversion unit according to claim 11 or 12, characterized in that, The functional surface of the photoelectric conversion unit is provided with a fifth pad which is electrically isolated from the first photosensitive area, the first pad, the second pad and the fourth pad, and the fifth pad and the second pad are located on opposite sides of the first photosensitive area; the functional surface of the photoelectric conversion unit includes a connecting wiring connecting the first photosensitive area and the first pad, and the fifth pad is electrically isolated from the connecting wiring.

14. The photoelectric conversion unit according to claim 13, wherein At least one of the second pad and the fifth pad is provided with a soldering bump.

15. A photoelectric conversion unit, characterized in that, The photoelectric conversion unit has a functional surface, and the functional surface of the photoelectric conversion unit includes: a second photosensitive area located in the middle; a third pad, electrically connected to the second photosensitive area; A sixth pad is electrically isolated from the second photosensitive area; wherein at least one of the third pad and the sixth pad is provided with a soldering bump.

16. The optoelectronic conversion unit according to claim 15, characterized in that, The third pad and the sixth pad are located at two opposite sides of the second photosensitive area.