Binding assembly, binding backboard and micro electronic component

Abstract

The binding assembly disclosed by the embodiment of the utility model comprises a binding backboard which is provided with a binding substrate and a substrate electrode, and the substrate electrode is arranged at one side of the binding substrate and is electrically connected with the binding substrate; the micro electronic component comprises a micro electronic device and a chip electrode, the chip electrode is electrically connected with the micro electronic device, and at least part of the chip electrode is arranged on the side face of the micro electronic device; the binding backboard and the micro electronic component can be embedded with each other so that the substrate electrode and the chip electrode can be bound with each other, a receiving structure is formed on at least one of the micro electronic component and the binding backboard, an insertion structure is formed on the other of the micro electronic component and the binding backboard, and the receiving structure comprises an accommodating fixing structure; the accommodating and fixing structure can be inserted by the insertion structure and fixes the insertion structure. The binding assembly, the binding backboard and the miniature electronic component disclosed by the embodiment of the utility model have the characteristics of lower binding and repairing difficulty and better binding effect.

Description

Technical Field

[0001] The utility model relates to the technical field of display, in particular to a bonding component, a bonding backplane and a microelectronic component. Background Art

[0002] Micro LED (Micro Light Emitting Diode) display technology is currently widely used in various display devices. The Micro LED display backplane needs to perform a large number of Micro LED chip transfers and bondings. The post-bonding repairability technology is the key to mass production. In related technologies, the repair method generally involves first applying power to the bonded backplane to find the position of the defective points, then using a laser to remove the chips at the defective points, and then filling a chip at the original position or the position of the spare electrode. Finally, the repaired chip is bonded to the backplane by means of local heating or overall heating. During this process, it is easy to affect the solder joint quality of the chips that have been soldered around, and there are problems of high repair difficulty and high repair cost. Summary of the Utility Model

[0003] Therefore, in order to overcome at least some defects in the prior art, embodiments of the present utility model provide a bonding component, a bonding backplane and a microelectronic component, which have the characteristics of lower bonding and repair difficulty and better bonding effect.

[0004] Specifically, on the one hand, an embodiment of the present utility model provides a bonding component, including: a bonding backplane, having a bonding substrate and a substrate electrode, the substrate electrode being disposed on one side of the bonding substrate and electrically connected to the bonding substrate; a microelectronic component, the microelectronic component including a microelectronic device and a chip electrode, the microelectronic device having a first surface and a second surface opposite to each other in a first direction, and side surfaces adjacent to the first surface and the second surface; the microelectronic device including a plurality of semiconductor layers stacked in the first direction; the chip electrode being electrically connected to the microelectronic device and at least partially disposed on the side surface of the microelectronic device; wherein, the bonding backplane and the microelectronic component can be mutually engaged so that the substrate electrode and the chip electrode can be mutually bonded, a receiving structure is formed on at least one of the microelectronic component and the bonding backplane, and an insertion structure is formed on the other, the receiving structure including a receiving and fixing structure, and the insertion structure can be inserted into the receiving and fixing structure and fixed by the receiving and fixing structure.

[0005] In some embodiments, a substrate groove is formed on the bonding substrate, and the substrate electrode is at least partially located in the substrate groove; the bonding substrate serves as the receiving structure, the microelectronic component serves as the inserting structure, the substrate groove serves as the accommodating and fixing structure, and the microelectronic device is inserted into the substrate groove so that the chip electrode and the substrate electrode are bonded to each other.

[0006] In some embodiments, the chip electrode includes a chip electrode side portion located on the side surface; the substrate electrode includes a substrate electrode side portion, and the substrate electrode side portion covers the side wall of the substrate groove and contacts the chip electrode side portion.

[0007] In some embodiments, the chip electrode further includes a chip electrode bottom portion connected to the chip electrode side portion, the chip electrode bottom portion is located on the first surface, the substrate electrode further includes a substrate electrode bottom portion connected to the substrate electrode side portion and located at the bottom of the substrate groove, and the substrate electrode bottom portion is located on the side of the chip electrode bottom portion facing away from the microelectronic device and contacts the chip electrode bottom portion.

[0008] In some embodiments, the receiving structure is formed on at least one of the substrate electrode and the chip electrode, and the inserting structure is formed on the other.

[0009] In some embodiments, the receiving structure includes a conductive substrate and the accommodating and fixing structure provided on the conductive substrate; the accommodating and fixing structure includes an accommodating cavity; the accommodating and fixing structure includes a plurality of nano-columns, the plurality of nano-columns are arranged at intervals, and the gaps between the plurality of nano-columns form the accommodating cavity; alternatively, the accommodating and fixing structure includes a conductive side wall, a flexible structure, and a conductive thin sheet; the conductive side wall encloses a filling cavity on the conductive substrate and is electrically connected to the conductive substrate; the flexible structure fills the filling cavity, the conductive thin sheet covers the side of the flexible structure away from the conductive substrate, and the conductive thin sheet is electrically connected to the conductive side wall.

[0010] In some embodiments, the chip electrode includes a chip electrode side portion located on the side surface and a chip electrode bottom portion located on the first surface; the substrate electrode includes a substrate electrode bottom portion and a substrate electrode side portion, and the substrate electrode side portion extends from the substrate electrode bottom portion in a direction away from the bonding substrate; the chip electrode bottom portion and the substrate electrode bottom portion are mutually fitted, and the chip electrode side portion contacts the substrate electrode side portion and limits the position of the microelectronic component.

[0011] An embodiment of the present utility model provides a microelectronic component, including: a microelectronic device and a chip electrode. The microelectronic device has a first surface and a second surface opposite to each other in a first direction, and side surfaces adjacent to the first surface and the second surface; the microelectronic device includes a plurality of semiconductor layers stacked in the first direction; the chip electrode is electrically connected to the microelectronic device and at least partially disposed on the side surface of the microelectronic device; the chip electrode has a receiving and fixing structure, and the receiving and fixing structure can be inserted by a substrate electrode on a bonding substrate to fix the substrate electrode; so that the microelectronic device can be bonded to the bonding substrate.

[0012] In some embodiments, the chip electrode has a chip electrode side portion disposed on the side surface and a chip electrode bottom portion disposed on the first surface. The chip electrode bottom portion is connected to the chip electrode side portion, and the receiving and fixing structure is formed on a side of the chip electrode bottom portion facing away from the first surface.

[0013] In some embodiments, the chip electrode includes a conductive substrate and the receiving and fixing structure disposed on the conductive substrate; the receiving and fixing structure includes a receiving cavity; the receiving and fixing structure includes a plurality of nanorods, the plurality of nanorods are spaced apart from each other, and a gap between the plurality of nanorods forms the receiving cavity; alternatively, the receiving and fixing structure includes a conductive sidewall, a flexible structure, and a conductive thin sheet; the conductive sidewall encloses a filling cavity on the conductive substrate and is electrically connected to the conductive substrate; the flexible structure fills the filling cavity, the conductive thin sheet covers a side of the flexible structure away from the conductive substrate, and the conductive thin sheet is electrically connected to the conductive sidewall.

[0014] In some embodiments, the plurality of semiconductor layers include a first semiconductor layer, an active layer, and a second semiconductor layer. The first semiconductor layer has the first surface, the second surface, and the side surfaces; the active layer covers the first surface and the side surfaces; the second semiconductor layer covers the active layer.

[0015] In some embodiments, the microelectronic device further includes an insulating layer covering the second semiconductor layer; the chip electrode includes a first-polarity electrode and a second-polarity electrode; the second-polarity electrode passes through the insulating layer and is electrically connected to the second semiconductor layer; the first-polarity electrode is insulated from the second semiconductor layer through the insulating layer, and the first-polarity electrode is electrically connected to the first semiconductor layer; at least a part of at least one of the first-polarity electrode and the second-polarity electrode is disposed on the side surface.

[0016] In some embodiments, the plurality of semiconductor layers include a first semiconductor layer, an active layer, and a second semiconductor layer. The first semiconductor layer has the first surface, the second surface, and the side surface. The active layer and the second semiconductor layer are sequentially stacked on the first surface. And the orthographic projection areas of the active layer and the second semiconductor layer on the first surface are smaller than the area of the first surface. The chip electrodes include a first-polarity electrode and a second-polarity electrode. The second-polarity electrode is disposed on a side of the second semiconductor layer away from the active layer and is electrically connected to the second semiconductor layer. The first-polarity electrode is at least partially disposed on the side surface and is electrically connected to the first semiconductor layer.

[0017] An embodiment of the present invention provides a bonding backplane, including: a bonding substrate and a substrate electrode. The substrate electrode is disposed on one side of the bonding substrate and is electrically connected to the bonding substrate. A receiving and fixing structure is formed on the bonding backplane. The receiving and fixing structure can be inserted by an insertion structure formed on a microelectronic component to fix the insertion structure. So that the microelectronic component can be bonded to the bonding substrate. The substrate electrode includes a substrate electrode side portion extending in a direction away from the bonding substrate. The substrate electrode side portion is used for bonding with a chip electrode side portion on the microelectronic component.

[0018] In some embodiments, a substrate groove is formed on the bonding substrate. The substrate electrode side portion is located on a side wall of the substrate groove. The substrate groove serves as the receiving and fixing structure. Or, the substrate electrode includes a substrate electrode bottom portion and the substrate electrode side portion. The substrate electrode side portion extends from the substrate electrode bottom portion in a direction away from the bonding substrate. The receiving and fixing structure is formed on the substrate electrode bottom portion.

[0019] As can be seen from the above, the above embodiments of the present invention can achieve one or more of the following beneficial effects: By setting the microelectronic component and the bonding backplane to be mutually embedded structures, the bonding of the chip electrode and the substrate electrode can be realized in a plugging manner, and the use of a heating welding method can be avoided during the bonding or repair process. Or first perform a test after bonding, and then bond the microelectronic component to the pixel to be repaired after the test. After the repair is completed, all the microelectronic components bonded to the bonding backplane can be welded together, which can also avoid affecting adjacent solder joints. And there is no need to apply glue during the repair process, which can reduce the repair difficulty. At least this part of the chip electrode of the microelectronic component is disposed on the side surface, which can increase the bonding area and strengthen the bonding effect.

[0020] Through the following detailed description with reference to the accompanying drawings, other aspects and features of the present utility model become apparent. However, it should be understood that the drawings are only designed for the purpose of explanation and are not intended to limit the scope of the present utility model. It should also be understood that, unless otherwise specified, the drawings are not necessarily drawn to scale and are merely intended to conceptually illustrate the structures and processes described herein. Description of the Drawings

[0021] The specific embodiments of the present utility model will be described in detail below with reference to the accompanying drawings.

[0022] Figure 1 Structural schematic diagram of a binding component provided by an embodiment of the present utility model.

[0023] Figure 2 Structural schematic diagram of another binding component provided by an embodiment of the present utility model.

[0024] Figure 3 For Figure 2 Structural schematic diagram of the bound binding component shown.

[0025] Figure 4 Structural schematic diagram of yet another binding component provided by an embodiment of the present utility model.

[0026] Figure 5 For Figure 4 Structural schematic diagram of the bound binding component shown.

[0027] Figure 6 Structural schematic diagram of still another binding component provided by an embodiment of the present utility model.

[0028] Figure 7 Structural schematic diagram of yet another different binding component provided by an embodiment of the present utility model.

[0029] Figure 8 Structural schematic diagram of still yet another binding component provided by an embodiment of the present utility model.

[0030] Figure 9 Structural schematic diagram of still a binding component provided by an embodiment of the present utility model.

[0031] Figure 10 Structural schematic diagram of a microelectronic component provided by an embodiment of the present utility model.

[0032] Figure 11a Structural schematic diagram of another microelectronic component provided by an embodiment of the present utility model.

[0033] Figure 11b Structural schematic diagram of yet another microelectronic component provided by an embodiment of the present utility model.

[0034] Figure 11c This is a schematic structural diagram of another kind of microelectronic component provided by an embodiment of the present utility model.

[0035] Figure 11d This is a schematic structural diagram of another kind of microelectronic component provided by an embodiment of the present utility model.

[0036] Figure 12 This is a schematic structural diagram of a bonding backplane provided by an embodiment of the present utility model.

[0037] Figure 13 This is a schematic structural diagram of another bonding backplane provided by an embodiment of the present utility model.

[0038] Figure 14 This is a schematic structural diagram of yet another bonding backplane provided by an embodiment of the present utility model.

[0039] Figure 15 This is a schematic structural diagram of another bonding backplane provided by an embodiment of the present utility model.

[0040]

Explanation of the reference numerals of the drawings

[0041] 10. Bonding component; 11. Microelectronic device; 111. First surface; 112. Second surface; 113. Side surface; 114. Semiconductor layer; 1141: First semiconductor layer; 1142. Active layer; 1143. Second semiconductor layer; 115. Insulating layer; 116. Transparent electrode; 12. Bonding substrate; 121. Driving circuit board; 122. Pixel defining layer; 123. Substrate groove; 13. Chip electrode; 13a. First polar electrode; 13b. Second polar electrode; 131. Side part of the chip electrode; 132. Bottom part of the chip electrode; 14. Substrate electrode; 141. Side part of the substrate electrode; 142. Bottom part of the substrate electrode; 143. Accommodating groove; 151. Conductive substrate; 152. Accommodating and fixing structure; 1521. Conductive side wall; 1522. Flexible structure; 1523. Conductive thin sheet; 1524. Nanopillar; 1525. Accommodating cavity; 1526. Filling cavity; 161. Solder layer; 162. Conductive spike; 20. Microelectronic component; 30. Bonding backplane. Detailed implementation manners

[0042] To make the above objects, features and advantages of the present utility model more obvious and understandable, the following will make a detailed description of the specific implementation manners of the present utility model in conjunction with the drawings.

[0043] In order to enable those of ordinary skill in the art to better understand the technical solutions of the present utility model, the following will clearly and completely describe the technical solutions in the embodiments of the present utility model in conjunction with the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are only a part of the embodiments of the present utility model, rather than all the embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present utility model.

[0044] It should be noted that the terms "first", "second", etc. in the description and claims of the present utility model and the above-mentioned drawings are used to distinguish similar objects, and do not necessarily need to describe a specific order or sequence. It should be understood that such terms can be interchanged under appropriate circumstances so that the embodiments of the present utility model described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device including a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0045] It should also be noted that the division of multiple embodiments in the present utility model is only for the convenience of description and should not constitute a special limitation. The features in various embodiments can be combined and cross-referenced without conflict.

[0046] In the related art, there are mainly two methods for bonding Micro LEDs. One is to provide an adhesive layer on the driving circuit board, transfer the Micro LED to the adhesive layer, and heat the adhesive layer to make the adhesive material adhere to the Micro LED and achieve the bonding connection between the Micro LED and the driving circuit board. The other is to provide welding electrodes on the driving circuit board and weld the electrodes of the Micro LED to the electrodes on the circuit board by heating welding. Both of these bonding methods have some defects in the bonding repair process of Micro LEDs. For example, in the method using adhesive, since the adhesiveness of the adhesive layer fails after the first transfer, it is necessary to remove the failed adhesive layer on the spare electrode and replenish new adhesive material before transferring a new chip to the spare electrode position. Since the size of the Micro LED is in the micron level, it is difficult to remove and replenish the single-point adhesive material. For the heating welding scheme, the entire panel needs to be heated and welded during the first transfer. If a new chip needs to be bonded during repair, the repair point needs to be heated for the second time. The thermal effect during heating welding may affect the adjacent points and cause their solder joints to melt again, affecting the welding quality.

[0047]

First Embodiment

[0048] As shown in Figure 1 , an embodiment of the present utility model provides a bonding component 10, which includes a bonding backplane 30 and a microelectronic component 20. Among them, the bonding backplane 30 has a bonding substrate 12 and a substrate electrode 14. The substrate electrode 14 is disposed on one side of the bonding substrate 12 and is electrically connected to the bonding substrate 12. The microelectronic component 20 includes a microelectronic device 11 and a chip electrode 13. The microelectronic device 11 has a first surface 111 and a second surface 112 that are opposite to each other in a first direction, and side surfaces 113 that are adjacent to the first surface 111 and the second surface 112. The microelectronic device 11 includes a plurality of semiconductor layers 114 stacked in the first direction. The chip electrode 13 is electrically connected to the microelectronic device 11 and is at least partially disposed on the side surface 113 of the microelectronic device 11. The bonding backplane 30 and the microelectronic component 20 can be mutually engaged so that the substrate electrode 14 and the chip electrode 13 can be mutually bonded. A receiving structure is formed on at least one of the microelectronic component 20 and the bonding backplane 30, and an insertion structure is formed on the other. The receiving structure includes a receiving and fixing structure 152, and the insertion structure can be inserted into and fixed by the receiving and fixing structure 152.

[0049] Among them, the microelectronic device 11 is, for example, a micro light-emitting device, specifically, a Micro LED chip. The plurality of semiconductor layers 114 included therein are, for example, an N-type semiconductor layer, an MQW layer (multiple quantum well layer), and a P-type semiconductor layer, etc. The N-type semiconductor layer, the MQW layer, and the P-type semiconductor layer can all be provided in multiple layers. The first direction is the stacking direction of the plurality of semiconductor layers 114. As shown in Figure 1 , the first direction shown is the up-and-down direction. Of course, in addition to the plurality of semiconductor layers 114, the microelectronic device 11 may also have, for example, a reflective layer, an ohmic contact layer, an insulating layer, etc. The layers included in the microelectronic device 11 can be set with reference to the structure of a traditional Micro LED chip. The first surface 111 and the second surface 112 are two surfaces of the microelectronic device 11 that are opposite to each other in the stacking direction, and can also be referred to as the bottom surface and the top surface of the microelectronic device 11. The chip electrode 13 can include an N electrode connected to the N-type semiconductor layer and a P electrode connected to the P-type semiconductor layer. The chip electrode 13 is at least partially disposed on the side surface 113. It can be that the N electrode is entirely disposed on the side surface 113, the P electrode is entirely disposed on the first surface 111, or both the N electrode and the P electrode are entirely or partially disposed on the side surface 113. The N electrode and the P electrode are, for example, disposed on opposite or adjacent side surfaces 113, which can increase the distance between the N electrode and the P electrode and reduce the mutual interference between the two.

[0050] The corresponding bonding substrate 12 is, for example, a Micro LED driving circuit board, and two substrate electrodes 14 are provided on the bonding substrate 12 corresponding to the position of one MicroLED chip. Multiple substrate electrodes 14 for bonding multiple Micro LED chips are provided on the bonding substrate 12.

[0051] A receiving structure is formed on at least one of the microelectronic component 20 and the bonding backplane 30, and an inserting structure is formed on the other. For example, a receiving structure can be formed on the microelectronic component 20 and an inserting structure can be formed on the bonding backplane 30; or an inserting structure can be formed on the microelectronic component 20 and a receiving structure can be formed on the bonding backplane 30; or inserting structures and receiving structures can be formed on both the microelectronic component 20 and the bonding backplane 30. Among them, the receiving structure or the inserting structure can be formed by the microelectronic component 20 or the bonding backplane 30 itself, or can also be formed on the chip electrode 13 or the substrate electrode 14. When formed on the chip electrode 13, a receiving structure or an inserting structure can be formed only corresponding to one of the N electrode and the P electrode, or receiving structures can be formed on both the N electrode and the P electrode, or inserting structures can be formed on both, or a receiving structure can be formed on one of the N electrode and the P electrode and an inserting structure can be formed on the other; the same is true when formed on the substrate electrode 14, which will not be elaborated here.

[0052] In this embodiment, by setting the microelectronic component 20 and the bonding backplane 30 to be mutually embedded structures, the bonding of the chip electrode 13 and the substrate electrode 14 can be achieved in a plugging form, and the method of heating and welding can be avoided during the bonding or repair process; or testing can be carried out first after bonding, and the microelectronic component 20 can be bonded to the pixels that need to be repaired after testing. After the repair is completed, all the microelectronic components 20 bonded on the bonding backplane 30 can be welded uniformly, which can also avoid affecting adjacent solder joints. And there is no need to apply glue during the repair process, which can reduce the repair difficulty.

[0053] In some embodiments, a receiving structure is formed on at least one of the substrate electrode 14 and the chip electrode 13, and an inserting structure is formed on the other. Refer to Figure 1 、 Figure 2 and Figure 3 As shown, a receiving structure is formed on the substrate electrode 14 and an inserting structure is formed on the chip electrode 13. Refer to Figure 4 and Figure 5 As shown, receiving structures and inserting structures are both formed on the substrate electrode 14 and the chip electrode 13.

[0054] Specifically, the receiving structure includes a conductive substrate 151 and a receiving and fixing structure 152 provided on the conductive substrate 151. The receiving and fixing structure 152 includes a receiving cavity 1525 or a flexible structure 1522.

[0055] Reference Figure 1 and Figure 2 Figure 2 , the accommodating and fixing structure 152 includes a conductive side wall 1521, a flexible structure 1522, and a conductive thin sheet 1523. The conductive side wall 1521 encloses a filling cavity 1526 on the conductive substrate 151 and is electrically connected to the conductive substrate 151. The flexible structure 1522 is filled in the filling cavity 1526, and the conductive thin sheet 1523 covers the side of the flexible structure 1522 away from the conductive substrate 151, and the conductive thin sheet 1523 is electrically connected to the conductive side wall 1521.

[0056] Among them, the conductive substrate 151, the conductive side wall 1521, and the conductive thin sheet 1523 are all made of metal materials. The material of the conductive substrate 151 can be, for example, the pad material used for traditional driving and bonding backplanes, such as one or a combination of metals such as copper, nickel, gold, and silver, and the thickness range is about 1-2 microns. The conductive substrate 151, the conductive side wall 1521, and the conductive thin sheet 1523 can be the same metal material or different metal materials. When they are the same metal material, the thermal expansion coefficients of the three are the same, and the bonding effect is better. Among them, the shape of the positive projection of the filling cavity 1526 on the conductive substrate 151 can be a circular shape, a rectangular shape, etc. The flexible structure 1522 can be, for example, a soft material such as silica gel, resin, or photoresist, and the hardness of the flexible structure 1522 is, for example, 40-80 HA (Shore A hardness). The thickness of the conductive side wall 1521 and the flexible structure 1522 is about 1-2 microns, and the thickness of the conductive thin sheet 1523 is less than 1 micron, for example, between 300 and 500 nanometers. The relatively thin thickness makes it easy to be inserted by the insertion structure and electrically connected. In some embodiments, reference Figure 2 The insertion structure can include, for example, a solder layer 161 and a conductive spike 162 provided on one side of the solder layer 161. The conductive spike 162 can penetrate the conductive thin sheet 1523 and penetrate into the flexible structure 1522 to electrically connect the insertion structure and the receiving structure through the conductive thin sheet 1523. The diameter of the conductive spike 162 is less than 1 micron, for example, between 500 nanometers and 1 micron, and the height is, for example, between 1 and 2 microns, so that the conductive spike 162 can better pierce the conductive thin sheet 1523. The solder layer 161 can use conventional solder metals such as tin, nickel, copper, indium, bismuth, or their alloys, etc. For example Figure 2 When forming the insertion structure on the chip electrode 13 as shown, the solder layer 161 is, for example, provided on the P electrode and the N electrode of the Micro LED. Conversely, it can also be forming the insertion structure on the substrate electrode 14, then the solder layer 161 is, for example, provided on the substrate electrode 14 of the bonding substrate 12.

[0057] In some embodiments, reference Figure 4 and Figure 5The accommodating and fixing structure 152 includes a plurality of nano-columns 1524 which are arranged at intervals from each other, and a accommodating cavity 1525 is formed in the gap between the plurality of nano-columns 1524.

[0058] Among the plurality of nano-columns 1524, the height of each nano-column 1524 is, for example, 2 to 3 micrometers, the width (or diameter) of each nano-column 1524 is, for example, between 200 and 500 nanometers, and the gap between two adjacent nano-columns 1524 is substantially equal to the width of each nano-column 1524, that is, the gap between two adjacent nano-columns 1524 is about 200 to 500 nanometers. Then the gap distance between two adjacent nano-columns on the chip electrode 13 is equal to the width of each nano-column 1524 on the substrate electrode 14. Refer to Figure 5 The gap distance between two adjacent nano-columns on the substrate electrode 14 is equal to the width of each nano-column 1524 on the chip electrode 13. Thus, the plurality of nano-columns 1524 on the chip electrode 13 and the substrate electrode 14 can be in contact and fixed with each other. The plurality of nano-columns 1524 on the chip electrode 13 are used as insertion structures and inserted into the accommodating cavity 1525 on the substrate electrode 14, and the plurality of nano-columns 1524 on the substrate electrode 14 are used as insertion structures and inserted into the accommodating cavity 1525 on the chip electrode 13. Specifically, the plurality of nano-columns 1524 are, for example, made of a metal material, specifically, for example, copper, nickel metal, etc. The metal material has better ductility, so that slight deformation can occur during the process of the chip electrode 13 and the substrate electrode 14 interpenetrating each other to better combine and not be easily damaged. More specifically, the plurality of nano-columns 1524 on the chip electrode 13 and the substrate electrode 14 are, for example, made of the same metal. Or the nano-columns 1524 of one of the chip electrode 13 and the substrate electrode 14 are made of a weldable material such as tin, nickel, copper, indium, bismuth or their alloys, etc., and the nano-columns 1524 of the other are made of metals such as copper, nickel that can be mutually melted with the welding material, so that the chip electrode 13 and the substrate electrode 14 can be heated and welded.

[0059] In some embodiments, the chip electrode 13 includes a chip electrode side portion 131 located on the side surface 113 and a chip electrode bottom portion 132 located on the first surface 111. The substrate electrode 14 includes a substrate electrode bottom portion 142 and a substrate electrode side portion 141, and the substrate electrode side portion 141 extends from the substrate electrode bottom portion 142 in a direction away from the bonding substrate 12. The chip electrode bottom portion 132 and the substrate electrode bottom portion 142 are mutually engaged, and the chip electrode side portion 131 is in contact with the substrate electrode side portion 141 and positions the microelectronic component 20. Refer to Figure 6 As shown, when a mutually inserted structure is formed by using the plurality of nano-columns 1524, the plurality of nano-columns 1524 on the microelectronic component 20 are specifically formed on the chip electrode bottom portion 132, and the plurality of nano-columns 1524 on the bonding backplane 30 are specifically formed on the substrate electrode bottom portion 142. Refer to Figure 7As shown, a receiving and fixing structure can also be formed at the bottom of the substrate electrode 142 (which can be used as the conductive substrate 151 at this time) by using the conductive sidewall 1521, the flexible structure 1522, and the conductive sheet 1523, and a spike structure is formed on the bottom of the chip electrode 132. In this embodiment, the chip electrode bottom 132 and the substrate electrode bottom 142 can be bound by being fitted to each other. By contacting the side portion 141 of the substrate electrode with the side portion 131 of the chip electrode, the contact area between the two electrodes can be increased, and the microelectronic component 20 can be limited, making the binding effect better.

[0060] In some embodiments, for each microelectronic component 20, there are multiple substrate electrodes 14 corresponding to multiple chip electrodes 13 respectively. The substrate electrode side portions 141 of the multiple substrate electrodes 14 corresponding to each microelectronic component 20 jointly enclose a receiving groove 143, so that the microelectronic component 20 can be embedded in the receiving groove 143. At this time, the receiving groove 143 can also be used as a receiving structure to fix the microelectronic component 20.

[0061] In some embodiments, referring to Figure 8 and Figure 9 , a substrate groove 123 is formed on the binding substrate 12, and the substrate electrode 14 is at least partially located in the substrate groove 123. The binding substrate 12 serves as a receiving structure, the microelectronic component 20 serves as an insertion structure, the substrate groove 123 serves as the receiving and fixing structure 152, and the microelectronic device 11 is inserted into the substrate groove 123 so that the chip electrode 13 and the substrate electrode 14 are bound to each other. Specifically, the binding substrate 12 includes a driving circuit board 121 and a pixel defining layer 122 provided on the driving circuit board 121. A driving circuit for driving the microelectronic component 20 to work is provided on the driving circuit board 121, and the substrate electrode 14 is electrically connected to the driving circuit. The substrate groove 123 is specifically formed on the pixel defining layer 122. By directly forming the substrate groove 123 on the binding substrate 12, the structure is simpler while achieving the fitting and binding.

[0062] In some embodiments, the chip electrode 13 includes a chip electrode side portion 131 located on the side surface 113. The substrate electrode 14 includes a substrate electrode side portion 141, and the substrate electrode side portion 141 covers the side wall of the substrate groove 123 and contacts the chip electrode side portion 131. Referring to Figure 8 If only one of the N electrode or the P electrode in the chip electrode 13 has the chip electrode side portion 131, for example, then only the substrate electrode side portion 141 corresponding to the chip electrode side portion 131 needs to be provided. Referring to Figure 9, for example, among the chip electrodes 13, if multiple electrodes all have the chip electrode side portions 131, substrate electrode side portions 141 can be respectively provided corresponding to the two chip electrode side portions 131, or substrate electrode side portions 141 can be provided corresponding to only one of the chip electrode side portions 131. In this embodiment, by providing the substrate electrode side portions 141 on the side of the substrate groove 123, the bonding area between the chip electrode 13 and the substrate electrode 14 can be increased, enhancing the bonding effect and the conduction effect.

[0063] In some embodiments, referring to Figure 8 , the chip electrode 13 further includes a chip electrode bottom portion 132 connected to the chip electrode side portion 131. The chip electrode bottom portion 132 is located on the first surface 111. The substrate electrode 14 further includes a substrate electrode bottom portion 142 connected to the substrate electrode side portion 141 and located at the bottom of the substrate groove 123. The substrate electrode bottom portion 142 is located on the side of the chip electrode bottom portion 132 facing away from the microelectronic device 11 and is in contact with the chip electrode bottom portion 132.

[0064]

Second Embodiment

[0065] Referring to Figure 10 and Figure 11a , an embodiment of the present utility model further provides a microelectronic component 20, including a microelectronic device 11 and a chip electrode 13. The microelectronic device 11 has a first surface 111 and a second surface 112 opposite to each other along a first direction, and side surfaces 113 adjacent to the first surface 111 and the second surface 112. The microelectronic device 11 includes a plurality of semiconductor layers 114 stacked along the first direction. The chip electrode 13 is electrically connected to the microelectronic device 11 and is at least partially disposed on the side surface 113 of the microelectronic device 11. The chip electrode 13 has a receiving and fixing structure 152, and the substrate electrode 14 on a bonding substrate 12 can be inserted into and fixed by the receiving and fixing structure 152, so that the microelectronic device 11 can be bonded to the bonding substrate 12.

[0066] Among them, the microelectronic device 11 is, for example, a micro light-emitting device, specifically, for example, a Micro LED chip. The plurality of semiconductor layers 114 included therein, for example, have a first semiconductor layer 1141, an active layer 1142, and a second semiconductor layer 1143 (referring to Figures 11b to 11d), where the first semiconductor layer 1141 is, for example, an N-type semiconductor layer, the active layer 1142 is, for example, an MQW layer (multiple quantum well), the second semiconductor layer 1143 is, for example, a P-type semiconductor layer, etc. In some embodiments, the N-type semiconductor layer, the MQW layer, and the P-type semiconductor layer can all be provided in multiple layers. Of course, in addition to the multiple semiconductor layers 114, the microelectronic device 11 can also have, for example, a reflective layer, an ohmic contact layer, an insulating layer 115, etc. In some embodiments, the layers included in the microelectronic device 11 can be set with reference to the structure of a traditional Micro LED chip. The first surface 111 and the second surface 112 are two surfaces of the microelectronic device 11 that are opposite in the stacking direction. The chip electrode 13 can include a first-polarity electrode 13a connected to the first semiconductor layer 1141 and a second-polarity electrode 13b connected to the second semiconductor layer 1143. When the first semiconductor layer 1141 is an N-type semiconductor layer, the first-polarity electrode is an N electrode, and when the second semiconductor layer 1143 is a P-type semiconductor layer, the second-polarity electrode is a P electrode. The chip electrode 13 is at least partially provided on the side surface 113. It can be that the N electrode is all provided on the side surface 113, the P electrode is all provided on the first surface 111, or both the N electrode and the P electrode are all or partially provided on the side surface 113. For example, setting the N electrode and the P electrode on opposite or adjacent side surfaces 113 can increase the distance between the N electrode and the P electrode and reduce the mutual interference between the two.

[0067] In this embodiment, the portion of the chip electrode 13 located on the side surface 113 can increase the area of the chip electrode 13, enhance the conductive effect, increase the distance between the N electrode and the P electrode, and reduce interference. And by providing a receiving and fixing structure 152 on the chip electrode 13, the chip electrode 13 can be bound to a binding substrate 12 in a plug-in form, avoiding the use of heating and welding methods during the binding or repair process, or first performing a test after binding, and then binding the microelectronic component 20 to the pixels that need to be repaired after the test. After the repair is completed, all the microelectronic components 20 bound to the binding backplane 30 can be welded together uniformly, which can also avoid interfering with adjacent pixels.

[0068] In some embodiments, the chip electrode 13 has a chip electrode side portion 131 provided on the side surface 113 and a chip electrode bottom portion 132 provided on the first surface 111. The chip electrode bottom portion 132 is connected to the chip electrode side portion 131, and the receiving and fixing structure 152 is formed on the side of the chip electrode bottom portion 132 facing away from the first surface 111. In this embodiment, the receiving and fixing structure 152 is particularly provided on the chip electrode bottom portion 132, which can ensure the width or area required for the setting of the receiving and fixing structure 152, and has the effects of ensuring the stability of the receiving and fixing structure 152 itself and facilitating plugging.

[0069] Specifically, the chip electrode 13 includes a conductive substrate 151 and a receiving and fixing structure 152 disposed on the conductive substrate 151.

[0070] Referring to Figure 10 , the receiving and fixing structure 152 includes a conductive sidewall 1521, a flexible structure 1522, and a conductive thin sheet 1523. The conductive sidewall 1521 encloses a filling cavity 1526 on the conductive substrate 151 and is electrically connected to the conductive substrate 151. The flexible structure 1522 is filled in the filling cavity 1526, and the conductive thin sheet 1523 covers the side of the flexible structure 1522 away from the conductive substrate 151. The conductive thin sheet 1523 is electrically connected to the conductive sidewall 1521. For the specific settings of the conductive sidewall 1521, the flexible structure 1522, and the conductive thin sheet 1523, reference may be made to the description in the foregoing first embodiment, and details are not described herein again.

[0071] Referring to Figure 11a , the receiving and fixing structure 152 includes a receiving cavity 1525. The receiving and fixing structure 152 includes a plurality of nano-columns 1524. The plurality of nano-columns 1524 are arranged at intervals, and the gaps between the plurality of nano-columns 1524 form the receiving cavity 1525. For the specific description of the plurality of nano-columns 1524, reference may be made to the description in the foregoing first embodiment, and details are not described herein again.

[0072] Referring to Figure 11b , in some embodiments, the plurality of semiconductor layers 114 include a first semiconductor layer 1141, an active layer 1142, and a second semiconductor layer 1143. The first semiconductor layer 1141 has a first surface 111, a second surface 112, and a side surface 113. The active layer 1142 covers the first surface 111 and the side surface 113. The second semiconductor layer 1143 covers the active layer 1142. Taking the first semiconductor layer 1141 as a hexahedron structure as an example, the active layer 1142 covers the five surfaces of the first semiconductor layer 1141 except the second surface 112. The second semiconductor layer 1143 covers the active layer 1142 in the same manner as the active layer 1142.

[0073] In some embodiments, the microelectronic device 11 further includes an insulating layer 115 covering the second semiconductor layer 1143. The chip electrode 13 includes a first-polarity electrode 13a and a second-polarity electrode 13b. The second-polarity electrode 13b passes through the insulating layer 115 and is electrically connected to the second semiconductor layer 1143. The first-polarity electrode 13a is insulated from the second semiconductor layer 1143 through the insulating layer 115, and the first-polarity electrode 13a is electrically connected to the first semiconductor layer 1141. At least a part of at least one of the first-polarity electrode 13a and the second-polarity electrode 13b is disposed on the side surface 113.

[0074] Specifically, for example, referring to Figure 11b, the insulating layer 115 has a bottom insulating layer corresponding to the first surface 111 and a side insulating layer corresponding to the side surface 113. An opening for the second-polarity electrode 13b to pass through is provided on the bottom insulating layer, so that the second-polarity electrode 13b can be disposed on one side of the first surface 111 and connected to the second semiconductor layer 1143. The first-polarity electrode 13a partially covers one side of the side surface 113 and partially extends to one side of the first surface 111. The first-polarity electrode 13a is insulated from the second semiconductor layer 1143 by the insulating layer 115. The insulating layer 115 has, for example, a top insulating layer corresponding to the second surface 112. Refer to Figure 11b , an opening can be provided on the top insulating layer, and a transparent electrode 116 can be provided on the second surface 112 to pass through the top insulating layer and be connected to the first semiconductor layer 1141, and the transparent electrode 116 extends to the end of the first-polarity electrode 13a close to the second surface 112 and the first-polarity electrode 13a, whereby the first-polarity electrode 13a can be connected to the first semiconductor layer 1141. Refer to Figure 11b , accommodation and fixing structures 152 can be respectively provided on the parts of the first-polarity electrode 13a and the second-polarity electrode 13b disposed on the side of the first surface 111 facing away from the second surface 112, so that the microelectronic component 20 can be bonded to a bonding substrate 12. The light emitted by the microelectronic device 11 can pass through the transparent electrode 116 and exit from the side of the second surface 112 away from the first surface 111.

[0075] Refer to Figure 11c , in some embodiments, the transparent electrode 116 may not be provided. A conductive hole is opened in the part of the active layer 1142 and the second semiconductor layer 1143 located on the first surface 111, and the insulating layer 115 extends to the side wall of the conductive hole. The first-polarity electrode 13a extends into the conductive hole to be connected to the first semiconductor layer 1141 and is insulated from the active layer 1142 and the second semiconductor layer 1143 by the part of the insulating layer 115 extending to the side wall of the conductive hole.

[0076] In some other embodiments, refer to Figure 11d , in the microelectronic device 11, the first semiconductor layer 1141 has a first surface 111, a second surface 112, and a side surface 113. The active layer 1142 and the second semiconductor layer 1143 are sequentially stacked on the first surface 111. And the orthographic projection area of the active layer 1142 and the second semiconductor layer 1143 on the first surface 111 is smaller than the area of the first surface 111. The chip electrode 13 includes a first-polarity electrode 13a and a second-polarity electrode 13b; the second-polarity electrode 13b is disposed on the side of the second semiconductor layer 1143 away from the active layer 1142 and is electrically connected to the second semiconductor layer 1143. The first-polarity electrode 13a is at least partially disposed on the side surface 113 and is electrically connected to the first semiconductor layer 1141.

[0077] In some embodiments, with continued reference to Figure 11d , the microelectronic device 11 further includes an insulating layer 115 disposed on the first surface 111. The first-polarity electrode 13a includes a chip electrode side portion 131 disposed on the side surface 113 and a chip electrode bottom portion 132 disposed on the side of the insulating layer 115 facing away from the first surface 111. Accommodating and fixing structures may be respectively disposed on the chip electrode bottom portion 132 and the second-polarity electrode 13b to enable the microelectronic component 20 to be bonded to a bonding substrate 12. It should be noted that the microelectronic device 11 in the foregoing first embodiment may have the specific structure of the microelectronic device 11 in any one of the microelectronic components 20 as shown in Figures 11b to 11d . Among them Figures 11b to 11d , the accommodating and fixing structure 152 including a plurality of nanorods 1524 shown in may also be replaced with an accommodating and fixing structure including a conductive sidewall 1521, a flexible structure 1522, and a conductive sheet 1523. Details are not described herein one by one.

[0078] An accommodating and fixing structure 152 is disposed on the chip electrode 13 of the microelectronic component 20 provided in the second embodiment of the present invention, having the same beneficial effects as the bonding assembly 10 in the foregoing first embodiment.

[0079]

Third Embodiment

[0080] With reference to Figures 12 to 15 , the third embodiment of the present invention provides a bonding backplane 30 including a bonding substrate 12 and a substrate electrode 14. The substrate electrode 14 is disposed on one side of the bonding substrate 12 and is electrically connected to the bonding substrate 12. An accommodating and fixing structure 152 is formed on the bonding backplane 30. The accommodating and fixing structure 152 can be inserted by an insertion structure formed on a microelectronic component 20 and fix the insertion structure, so that the microelectronic component 20 can be bonded to the bonding substrate 12. The substrate electrode 14 includes a substrate electrode side portion 141 extending in a direction away from the bonding substrate 12. The substrate electrode side portion 141 is used for bonding with the chip electrode side portion 131 on the microelectronic component 20.

[0081] The bonding substrate 12 is, for example, a Micro LED driving circuit board. Two substrate electrodes 14 are disposed on the bonding substrate 12 corresponding to the position of one Micro LED chip. Multiple groups of substrate electrodes 14 capable of bonding multiple Micro LED chips are disposed on the bonding substrate 12. Two groups of substrate electrodes 14 can be disposed on the bonding substrate 12 corresponding to the position of one pixel, and one group serves as the backup electrode of the other group.

[0082] In this embodiment, the plug-in binding of the microelectronic component 20 can be achieved by providing the accommodation and fixing structure 152 on the binding backplane 30. During the binding or repair process, the method of heating and welding can be avoided, or after binding, testing can be performed first, and then the microelectronic component 20 can be bound to the pixels that need to be repaired. After the repair is completed, all the microelectronic components 20 bound to the binding backplane 30 can be welded uniformly, which can also avoid interfering with adjacent pixels. Moreover, when the spare electrode has the accommodation and fixing structure 152, compared with the solution of repairing with conductive adhesive, the step of replenishing the adhesive material can be avoided, and the repair process is simpler and more feasible. In addition, the substrate electrode side portion 141 capable of fixing with the side portion 131 of the chip electrode on the microelectronic component 20 is provided on the substrate electrode 14, which can increase the binding area and improve the binding yield and conductive effect.

[0083] Among them, the accommodation and fixing structure 152 can be formed on the binding substrate 12 or on the substrate electrode 14.

[0084] In some embodiments, referring to Figure 12 and Figure 13 , a substrate groove 123 is formed on the binding substrate 12, and the substrate electrode side portion 141 is located on the side wall of the substrate groove 123. The substrate groove 123 serves as the accommodation and fixing structure 152. Thus, the microelectronic component 20 can be directly inserted into the substrate groove 123 and bound to the substrate electrode 14.

[0085] Specifically, the binding substrate 12 includes a driving circuit board 121 and a pixel defining layer 122 provided on the driving circuit board 121. A driving circuit for driving the microelectronic component 20 to work is provided on the driving circuit board 121, and the substrate electrode 14 is electrically connected to the driving circuit. The substrate groove 123 is specifically formed on the pixel defining layer 122. By directly opening the substrate groove 123 on the binding substrate 12, the structure is simpler while achieving the fitting and binding.

[0086] Referring to Figure 12 and Figure 13 , the position and number of the substrate electrode side portions 141 can be designed according to the position of the chip electrode side portion 131 of the chip electrode 13 on the microelectronic component 20 to be bound. This embodiment is not limited

[0087] In some embodiments, referring to Figure 14 and Figure 15 , the substrate electrode 14 includes a substrate electrode bottom portion 142 and a substrate electrode side portion 141. The substrate electrode side portion 141 extends from the substrate electrode bottom portion 142 in a direction away from the binding substrate 12. The accommodation and fixing structure 152 is formed on the substrate electrode bottom portion 142.

[0088] In some embodiments, the accommodation and fixing structure 152 can beFigure 14 The structure including the conductive sidewall 1521, the flexible structure 1522 and the conductive sheet 1523 as shown. The conductive sidewall 1521 encloses a filling cavity 1526 on the conductive substrate 151 and is electrically connected to the conductive substrate 151. The flexible structure 1522 is filled in the filling cavity 1526, and the conductive sheet 1523 covers the side of the flexible structure 1522 away from the conductive substrate 151. The conductive sheet 1523 is electrically connected to the conductive sidewall 1521. For the specific settings of the conductive sidewall 1521, the flexible structure 1522 and the conductive sheet 1523, reference can be made to the description in the foregoing first embodiment, and details are not described herein again.

[0089] In some embodiments, the accommodating and fixing structure 152 is as Figure 15 shown and includes a plurality of nano-columns 1524. The plurality of nano-columns 1524 are arranged at intervals, and the gaps between the plurality of nano-columns 1524 form an accommodating cavity 1525. For the specific description of the plurality of nano-columns 1524, reference can be made to the description in the foregoing first embodiment, and details are not described herein again.

[0090] In the bonding backplane 30 provided in the third embodiment of the present invention, an accommodating and fixing structure 152 is provided on the substrate electrode 14, which has the same beneficial effects as the bonding component 10 in the foregoing first embodiment.

[0091] The above are only the preferred embodiments of the present invention and do not impose any form of limitation on the present invention. Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some changes or modifications to the equivalent embodiments by using the disclosed technical content within the scope of the technical solution of the present invention. However, as long as it does not depart from the content of the technical solution of the present invention, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention still fall within the scope of the technical solution of the present invention.

Claims

1. A binding component (10), characterized in that, Comprising: A bonding backplane (30) having a bonding substrate (12) and a substrate electrode (14), the substrate electrode (14) being disposed on one side of the bonding substrate (12) and electrically connected to the bonding substrate (12); A microelectronic component (20), the microelectronic component (20) including a microelectronic device (11) and a chip electrode (13), the microelectronic device (11) having a first surface (111) and a second surface (112) opposite to each other in a first direction, and side surfaces (113) adjacent to the first surface (111) and the second surface (112); the microelectronic device (11) including a plurality of semiconductor layers (114) stacked in the first direction; the chip electrode (13) being electrically connected to the microelectronic device (11) and at least partially disposed on the side surface (113) of the microelectronic device (11); Wherein, the bonding backplane (30) and the microelectronic component (20) can be mutually engaged so that the substrate electrode (14) and the chip electrode (13) can be mutually bonded, a receiving structure is formed on at least one of the microelectronic component (20) and the bonding backplane (30), and an insertion structure is formed on the other, the receiving structure including a receiving and fixing structure (152), and the insertion structure can be inserted into the receiving and fixing structure (152) and fixed by the receiving and fixing structure (152).

2. The binding component (10) according to claim 1, wherein, A substrate groove (123) is formed on the bonding substrate (12), and the substrate electrode (14) is at least partially located in the substrate groove (123); the bonding substrate (12) serves as the receiving structure, the microelectronic component (20) serves as the insertion structure, the substrate groove (123) serves as the receiving and fixing structure (152), and the microelectronic device (11) is inserted into the substrate groove (123) so that the chip electrode (13) and the substrate electrode (14) are mutually bonded.

3. The binding component (10) according to claim 2, characterized in that, The chip electrode (13) includes a chip electrode side portion (131) located on the side surface (113); the substrate electrode (14) includes a substrate electrode side portion (141), and the substrate electrode side portion (141) covers the side wall of the substrate groove (123) and contacts the chip electrode side portion (131).

4. The binding component (10) according to claim 3, wherein The chip electrode (13) further includes a chip electrode bottom portion (132) connected to the chip electrode side portion (131), the chip electrode bottom portion (132) being located on the first surface (111), the substrate electrode (14) further includes a substrate electrode bottom portion (142) connected to the substrate electrode side portion (141) and located at the bottom of the substrate groove (123), and the substrate electrode bottom portion (142) is located on a side of the chip electrode bottom portion (132) facing away from the microelectronic device (11) and contacts the chip electrode bottom portion (132).

5. The binding component (10) according to claim 1, characterized in that, The receiving structure is formed on at least one of the substrate electrode (14) and the chip electrode (13), and the insertion structure is formed on the other.

6. The binding component (10) according to claim 5, characterized in that, The receiving structure includes a conductive substrate (151) and the accommodating and fixing structure (152) disposed on the conductive substrate (151); The accommodating and fixing structure (152) includes an accommodating cavity (1525); the accommodating and fixing structure (152) includes a plurality of nano-columns (1524), the plurality of nano-columns (1524) are arranged at intervals, and the gaps between the plurality of nano-columns (1524) form the accommodating cavity (1525); or, The accommodating and fixing structure (152) includes a conductive side wall (1521), a flexible structure (1522) and a conductive thin sheet (1523); the conductive side wall (1521) encloses a filling cavity (1526) on the conductive substrate (151) and is electrically connected to the conductive substrate (151); the flexible structure (1522) is filled in the filling cavity (1526), the conductive thin sheet (1523) covers the side of the flexible structure (1522) away from the conductive substrate (151), and the conductive thin sheet (1523) is electrically connected to the conductive side wall (1521).

7. The binding component (10) according to claim 5, characterized in that, The chip electrode (13) includes a chip electrode side portion (131) located on the side surface (113) and a chip electrode bottom portion (132) located on the first surface (111); the substrate electrode (14) includes a substrate electrode bottom portion (142) and a substrate electrode side portion (141), and the substrate electrode side portion (141) extends from the substrate electrode bottom portion (142) in a direction away from the bonding substrate (12); the chip electrode bottom portion (132) is mutually fitted with the substrate electrode bottom portion (142), and the chip electrode side portion (131) contacts the substrate electrode side portion (141) and positions the microelectronic component (20).

8. A microelectronic component (20), characterized in that, Comprising: A microelectronic device (11) and a chip electrode (13), the microelectronic device (11) having a first surface (111) and a second surface (112) opposite to each other in a first direction, and a side surface (113) adjacent to the first surface (111) and the second surface (112); the microelectronic device (11) includes a plurality of semiconductor layers (114) stacked in the first direction; the chip electrode (13) is electrically connected to the microelectronic device (11) and is at least partially disposed on the side surface (113) of the microelectronic device (11); the chip electrode (13) has an accommodating and fixing structure (152), and the accommodating and fixing structure (152) can be inserted by a substrate electrode (14) on a bonding substrate (12) to fix the substrate electrode (14); so that the microelectronic device (11) can be bonded to the bonding substrate (12).

9. The microelectronic component (20) according to claim 8, characterized in that, The chip electrode (13) has a chip electrode side portion (131) provided on the side surface (113) and a chip electrode bottom portion (132) provided on the first surface (111). The chip electrode bottom portion (132) is connected to the chip electrode side portion (131), and the accommodating and fixing structure (152) is formed on a side of the chip electrode bottom portion (132) facing away from the first surface (111).

10. The microelectronic component (20) according to claim 8, characterized in that, The chip electrode (13) includes a conductive substrate (151) and the accommodating and fixing structure (152) provided on the conductive substrate (151); The accommodating and fixing structure (152) includes an accommodating cavity (1525); the accommodating and fixing structure (152) includes a plurality of nano-columns (1524) which are arranged at intervals from each other, and a gap between the plurality of nano-columns (1524) forms the accommodating cavity (1525); or The accommodating and fixing structure (152) includes a conductive side wall (1521), a flexible structure (1522) and a conductive thin sheet (1523); the conductive side wall (1521) encloses a filling cavity (1526) on the conductive substrate (151) and is electrically connected to the conductive substrate (151); the flexible structure (1522) is filled in the filling cavity (1526), the conductive thin sheet (1523) covers a side of the flexible structure (1522) away from the conductive substrate (151), and the conductive thin sheet (1523) is electrically connected to the conductive side wall (1521).

11. The microelectronic component (20) according to claim 8, characterized in that, The plurality of semiconductor layers (114) include a first semiconductor layer (1141), an active layer (1142) and a second semiconductor layer (1143). The first semiconductor layer (1141) has the first surface (111), the second surface (112) and the side surface (113); the active layer (1142) covers the first surface (111) and the side surface (113); the second semiconductor layer (1143) covers the active layer (1142).

12. The microelectronic component (20) according to claim 11, characterized in that, The microelectronic device (11) further includes an insulating layer (115) covering the second semiconductor layer (1143); the chip electrode (13) includes a first-polarity electrode (13a) and a second-polarity electrode (13b); the second-polarity electrode (13b) passes through the insulating layer (115) and is electrically connected to the second semiconductor layer (1143); the first-polarity electrode (13a) is insulated from the second semiconductor layer (1143) through the insulating layer (115), and the first-polarity electrode (13a) is electrically connected to the first semiconductor layer (1141); at least a part of at least one of the first-polarity electrode (13a) and the second-polarity electrode (13b) is provided on the side surface (113).

13. The microelectronic component (20) according to claim 8, characterized in that, The multiple semiconductor layers (114) include a first semiconductor layer (1141), an active layer (1142), and a second semiconductor layer (1143). The first semiconductor layer (1141) has the first surface (111), the second surface (112), and the side surface (113). The active layer (1142) and the second semiconductor layer (1143) are sequentially stacked on the first surface (111). And the orthographic projection areas of the active layer (1142) and the second semiconductor layer (1143) on the first surface (111) are smaller than the area of the first surface (111). The chip electrode (13) includes a first-polarity electrode (13a) and a second-polarity electrode (13b). The second-polarity electrode (13b) is disposed on a side of the second semiconductor layer (1143) away from the active layer (1142) and is electrically connected to the second semiconductor layer (1143). The first-polarity electrode (13a) is at least partially disposed on the side surface (113) and is electrically connected to the first semiconductor layer (1141).

14. A binding backplane (30), characterized in that, Comprising: A bonding substrate (12) and a substrate electrode (14). The substrate electrode (14) is disposed on one side of the bonding substrate (12) and is electrically connected to the bonding substrate (12). A receiving and fixing structure (152) is formed on the bonding backplane (30). The receiving and fixing structure (152) can be inserted by an insertion structure formed on a microelectronic component (20) to fix the insertion structure. So that the microelectronic component (20) can be bonded to the bonding substrate (12). The substrate electrode (14) includes a substrate electrode side portion (141) extending in a direction away from the bonding substrate (12). The substrate electrode side portion (141) is used for bonding with a chip electrode side portion (131) on the microelectronic component (20).

15. The bonding backplane (30) according to claim 14, characterized in that, A substrate groove (123) is formed on the bonding substrate (12). The substrate electrode side portion (141) is located on a sidewall of the substrate groove (123). The substrate groove (123) serves as the receiving and fixing structure (152). Or, the substrate electrode (14) includes a substrate electrode bottom portion (142) and the substrate electrode side portion (141). The substrate electrode side portion (141) extends from the substrate electrode bottom portion (142) in a direction away from the bonding substrate (12). The receiving and fixing structure (152) is formed on the substrate electrode bottom portion (142).

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