Positive and negative conduction isolation clamp for PVD (Physical Vapor Deposition) processing
By designing a forward and reverse conduction isolation fixture for PVD processing including a base, a carrier table and a baffle, the problems of conduction and contamination of the front and back sides of the substrate in PVD processing are solved, safe and reliable processing of the substrate is achieved, and the risks of subsequent process are reduced.
Patent Information
- Application Number
- CN202421646922.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-12
- Publication Date
- 2025-07-29
- Estimated Expiration
- 2034-07-12
AI Technical Summary
In the PVD processing, the risk of conduction and contamination of the front and back sides of the substrate is high, and manual tape pasting leads to inconsistency, increasing operation difficulty and subsequent process risks.
A forward and reverse conduction isolation fixture including a base, a carrier table and a baffle is designed. The carrier table is equipped with a telescopic portion and a carrier cavity. The baffle blocks the edge of the substrate to achieve the isolation of the front and back surfaces of the substrate and adapt to substrates of different thicknesses.
Effectively avoid the conduction of the front and back sides of the substrate, reduce the risk of pollution and lobes, reduce the risk of subsequent processes, and improve the reliability of the PVD process.
Smart Images
Figure CN223160774U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the technical field of PVD processing, and particularly relates to a positive and negative conduction isolation fixture for PVD processing. Background Art
[0002] When the existing substrate glass, silicon wafers and ceramics are subjected to PVD processing, it is necessary to isolate and conduct the metal layers on the front and back sides. At present, the commonly used method is to stick high-temperature tape, that is, stick the high-temperature tape on the edge of the substrate, and then put the substrate into the PVD for sputtering operation to achieve the effect of insulating the front and back sides. However, this method has the risk of chipping, which may not only produce dirt on the surface of the substrate, but also pose a certain pollution risk to the PVD chamber. Moreover, manually sticking the tape will result in inconsistent metal areas between the substrates, which will cause differences in the film thickness of the subsequent electroplating process and increase the workload of the operator. Summary of the Utility Model
[0003] The utility model overcomes the deficiencies of the prior art and provides a positive and negative conduction isolation fixture for PVD processing to solve the problems existing in the prior art.
[0004] To achieve the above object, the technical solution adopted by the utility model is: a positive and negative conduction isolation fixture for PVD processing, comprising
[0005] a base, the base is a circular structure;
[0006] a loading table, the loading table is arranged on the base, and a loading cavity is arranged on the loading table. A telescopic part is arranged in the loading cavity to telescopically accommodate the substrate to be processed;
[0007] a baffle, the baffle is arranged on the surface of the loading table, and the baffle protrudes from the edge part of the loading cavity to block the substrate located in the loading cavity.
[0008] In a preferred embodiment of the utility model, the loading table is installed on the base and is fixedly connected to the base.
[0009] In a preferred embodiment of the utility model, the telescopic part comprises a telescopic spring and a telescopic plate. The telescopic spring is installed in the loading cavity, and the telescopic plate is installed on the telescopic spring to carry the substrate.
[0010] In a preferred embodiment of the utility model, the number of the telescopic springs is several and is evenly distributed in the loading cavity.
[0011] In a preferred embodiment of the utility model, the baffle is a circular ring structure, and the baffle is detachably connected to the loading table.
[0012] The utility model solves the defects existing in the background technology, and the utility model has the following beneficial effects:
[0013] The positive and negative conduction isolation fixture for PVD processing of the utility model can avoid the situation of positive and negative conduction of the substrate during the PVD processing of the substrate, and can reduce the pollution and cracking risk of the substrate, greatly reducing the risk of NG in the subsequent process, and providing excellent conditions for the PVD process and the subsequent processes. BRIEF DESCRIPTION OF THE DRAWINGS
[0014] The following further describes the utility model in conjunction with the drawings and embodiments;
[0015] Figure 1 It is a schematic diagram of the overall structure of the preferred embodiment of the utility model;
[0016] Figure 2 It is a cross-sectional view of the preferred embodiment of the utility model;
[0017] In the figure: 10, base; 20, loading table; 21, loading cavity; 30, baffle; 40, telescopic part; 41, telescopic spring; 42, telescopic plate. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0018] The following further describes the utility model in conjunction with the drawings and specific embodiments, so that those skilled in the art can better understand the utility model and be able to implement it, but the embodiments cited do not limit the utility model.
[0019] Magnetron sputtering is a common physical deposition technology. Its basic principle is that in a vacuum environment, the target and the substrate are placed at two opposite positions, and then high-frequency alternating current is applied to the target to generate electron flow and ion flow. By applying an external magnetic field, electrons and ions can be focused on a local area of the target surface, so that its atoms or molecules are bombarded out and deposited on the substrate surface to form a thin film. The positive and negative conduction isolation fixture for PVD processing in this embodiment can isolate the positive and negative sides of the substrate from conducting.
[0020] This embodiment provides a positive and negative conduction isolation fixture for PVD processing. The positive and negative conduction isolation fixture for PVD processing can avoid the situation of positive and negative conduction of the substrate during the PVD processing of the substrate, and can reduce the pollution and cracking risk of the substrate, greatly reducing the risk of NG in the subsequent process, and providing excellent conditions for the PVD process and the subsequent processes.
[0021] Combined with Figure 1 and Figure 2As shown in the figure, the positive and negative conduction isolation fixture for PVD processing in this embodiment includes a base 10, a material loading table 20, and a baffle 30. The base 10 of this embodiment is a circular structure. The material loading table 20 is used to load the substrate, and the baffle 30 blocks the edge of the substrate.
[0022] In this embodiment, the material loading table 20 is arranged on the base 10. A material loading cavity 21 is provided on the material loading table 20, and a telescopic part 40 is arranged in the material loading cavity 21 to telescopically accommodate the substrate to be processed. The telescopic part 40 includes a telescopic spring 41 and a telescopic plate 42. The telescopic spring 41 is installed in the material loading cavity 21, and the telescopic plate 42 is installed on the telescopic spring 41 to carry the substrate. Installing the telescopic part 40 in the material loading cavity 21 can be adjusted according to the thickness of the substrate to adapt to the use of substrates with different thicknesses. The material loading table 20 of this embodiment is installed on the base 10 and is fixedly connected to the base 10.
[0023] Specifically, in this embodiment, the number of telescopic springs 41 is several and they are evenly distributed in the material loading cavity 21. Under the combined action of multiple telescopic springs 41, the position of the telescopic plate 42 is adjusted to adapt to substrates with different thicknesses.
[0024] In this embodiment, the baffle 30 is arranged on the surface of the material loading table 20. The baffle 30 protrudes from the edge part of the material loading cavity 21 to block the substrate located in the material loading cavity 21. The baffle 30 is a circular ring structure, and the baffle 30 is detachably connected to the material loading table 20. The baffle 30 of this embodiment can block 1 mm of the edge of the substrate to meet the sputtering treatment of the substrate.
[0025] In actual use of the positive and negative conduction isolation fixture for PVD processing in this embodiment, after the substrate is installed, one side of the substrate is sputtered, and then the substrate is turned over so that the other side of the substrate is sputtered. During the sputtering process, the front and back sides of the isolation substrate can be made conductive, thereby reducing the risk of substrate contamination and cracking, and greatly reducing the risk of NG in subsequent processes, providing excellent conditions for the PVD process and subsequent processes.
[0026] Obviously, the above embodiments are only examples clearly described and are not limitations on the implementation manners. For those of ordinary skill in the art, other different forms of changes or variations can be made based on the above description. It is not necessary and impossible to list all the implementation manners here. And the obvious changes or variations derived therefrom are still within the protection scope of the present invention.
Claims
1. A positive and negative conduction isolation fixture for PVD processing, characterized in that, including a base (10), the base (10) being a circular structure; a material loading table (20), the material loading table (20) being arranged on the base (10), a material loading cavity (21) being provided on the material loading table (20), and a telescopic part (40) being arranged in the material loading cavity (21) to telescopically accommodate a substrate to be processed; a baffle (30), the baffle (30) being arranged on the surface of the material loading table (20), the baffle (30) protruding from the edge part of the material loading cavity (21) to block the substrate located in the material loading cavity (21); the material loading table (20) is mounted on the base (10) and fixedly connected to the base (10).
2. The positive and negative conduction isolation fixture for PVD processing according to claim 1, characterized in that The telescopic part (40) includes a telescopic spring (41) and a telescopic plate (42), the telescopic spring (41) being mounted in the material loading cavity (21), and the telescopic plate (42) being mounted on the telescopic spring (41) to carry the substrate.
3. A positive and negative conduction isolation fixture for PVD processing according to claim 2, characterized in that, The number of the telescopic springs (41) is several and they are evenly distributed in the material loading cavity (21).
4. A positive and negative conduction isolation fixture for PVD processing according to claim 1, characterized in that, The baffle (30) is a circular ring structure, and the baffle (30) is detachably connected to the material loading table (20).