Connection structure and semiconductor epitaxial device

Abstract

The utility model relates to a connection structure and a semiconductor epitaxial device. The connecting structure comprises a connecting pipe body extending in the first direction, the connecting pipe body comprises a gas inlet and a gas outlet which are oppositely distributed in the first direction, the gas inlet is communicated with the gas outlet, and the connecting pipe body is further provided with a pin hole located between the gas inlet and the gas outlet; the fixing pin penetrates through the pin hole and extends into the connecting pipe body in the second direction. The first sealing ring is located on the inner wall of the connecting pipe body, and the first sealing ring is distributed between the fixing pin and the gas outlet; and the second sealing ring is distributed around the outer wall of the connecting pipe body, and the second sealing ring seals the pin hole. According to the utility model, the leakage of reaction gas is reduced, the aggregation of particulate matters is reduced, and poor appearance of the wafer is avoided.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor manufacturing, in particular to a connection structure and a semiconductor epitaxial device. Background Art

[0002] A semiconductor epitaxial growth device is a device that performs epitaxial growth on the surface of a wafer. Such a device typically includes a base, a nozzle extending through the base, and an air inlet duct located below the base and connected to the nozzle via a connecting structure. During the epitaxial growth process within the semiconductor epitaxial growth device, a wafer is placed on the base and heated by a heating filament within the base. Reactive gas is transported to the nozzle via the air inlet duct and the connecting structure, and then sprayed onto the surface of the wafer. However, the reactive gas is prone to leakage during the process of being transported from the air inlet duct to the nozzle. Leaked reactive gas can form particles that adhere to the outer surface of the nozzle, particularly at the nozzle orifice. As the nozzle sprays reactive gas onto the wafer, particles at the nozzle orifice are easily carried to the wafer surface by the airflow. This can not only result in poor appearance of the epitaxial layer formed on the wafer surface, but can also scratch the wafer, affecting the yield of the wafer product.

[0003] Therefore, how to reduce the leakage of reaction gas, thereby reducing the accumulation of particles generated by the leaked reaction gas on the nozzle, avoiding the appearance of poor wafers, and ensuring the yield of wafer products, is a technical problem that needs to be solved urgently. Summary of the Invention

[0004] The utility model provides a connection structure and a semiconductor epitaxial device for reducing leakage of reaction gas, thereby reducing the aggregation of particles generated by the leaked reaction gas on the nozzle, avoiding the appearance defects of the wafer, and ensuring the yield of the wafer products.

[0005] According to some embodiments, the present invention provides a connection structure, including:

[0006] a connecting pipe body extending along a first direction, the connecting pipe body comprising a gas inlet and a gas outlet relatively distributed along the first direction, the gas inlet being in communication with the gas outlet, and the connecting pipe body further comprising a pin hole located between the gas inlet and the gas outlet;

[0007] a fixing pin passing through the pin hole and extending into the interior of the connecting tube body along a second direction, wherein the first direction intersects the second direction perpendicularly;

[0008] The first sealing ring is located on the inner wall of the connecting pipe body, and the first sealing ring is distributed between the fixing pin and the gas outlet;

[0009] The second sealing ring is distributed around the outer wall of the connecting pipe body, and the second sealing ring seals the pin hole.

[0010] In some embodiments, the connecting pipe body is a Teflon pipe body, and the second sealing ring is a Teflon sealing ring.

[0011] In some embodiments, the width of the second sealing ring in the first direction is greater than the diameter of the pin hole, and the width of the second sealing ring is greater than the width of the first sealing ring.

[0012] In some embodiments, there are a plurality of the first sealing rings between the fixing pin and the gas outlet, and the plurality of the first sealing rings are arranged at intervals in the first direction.

[0013] In some embodiments, it further includes:

[0014] The third sealing ring is located on the inner wall of the connecting pipe body, and the third sealing ring is distributed between the fixing pin and the gas inlet.

[0015] According to some other embodiments, the present invention further provides a semiconductor epitaxial device, including:

[0016] The substrate includes a bearing surface and a bottom surface that are oppositely distributed in the first direction;

[0017] The nozzle penetrates through the substrate in the first direction;

[0018] The intake pipe is located below the substrate in the first direction;

[0019] The connecting structure includes a connecting pipe body, a fixing pin, a first sealing ring and a second sealing ring. The connecting pipe body extends in the first direction. The connecting pipe body includes a gas inlet and a gas outlet that are oppositely distributed in the first direction, and the gas inlet is communicated with the gas outlet. The intake pipe extends from the gas inlet to the inside of the connecting pipe body, the nozzle extends from the gas outlet to the inside of the connecting pipe body. There is also a pin hole on the connecting pipe body between the gas inlet and the gas outlet. The fixing pin passes through the pin hole and extends into the inside of the connecting pipe body in the second direction. The first sealing ring is located on the inner wall of the connecting pipe body, and the first sealing ring is distributed between the inner wall of the connecting pipe body and the nozzle. The second sealing ring is distributed around the outer wall of the connecting pipe body, and the second sealing ring seals the pin hole. The first direction and the second direction are vertically intersecting.

[0020] In some embodiments, there are a plurality of the first sealing rings between the inner wall of the connecting pipe body and the nozzle, and the plurality of the first sealing rings are arranged at intervals along the first direction.

[0021] In some embodiments, the width of the second sealing ring along the first direction is greater than the diameter of the pin hole, and the width of the second sealing ring is greater than the width of the first sealing ring.

[0022] In some embodiments, the connecting pipe body is a Teflon pipe body, and the second sealing ring is a Teflon sealing ring, and the connecting pipe body is fixedly connected to the second sealing ring.

[0023] In some embodiments, the connecting structure further includes a third sealing ring located on the inner wall of the connecting pipe body, and the third sealing ring is distributed between the inner wall of the connecting pipe body and the air inlet pipe.

[0024] The connecting structure and the semiconductor epitaxial device provided by the present utility model, by providing the first sealing ring and the second sealing ring, and the first sealing ring is located on the inner wall of the connecting pipe body and is distributed between the fixed pin and the gas outlet, the second sealing ring is distributed around the outer wall of the connecting pipe body and seals the pin hole. On the one hand, the first sealing ring avoids the leakage of the reaction gas from the gas outlet of the connecting structure to the outside; on the other hand, the second sealing ring avoids the leakage of the reaction gas from the pin hole of the fixed pin to the outside. The synergistic effect of the above two aspects reduces the leakage of the reaction gas, thereby reducing the accumulation of particulate matter generated by the leaked reaction gas on the nozzle orifice or the outer surface, avoiding the appearance defect of the wafer, and ensuring the yield of the wafer product. The present utility model also provides a third sealing ring on the inner wall of the connecting pipe body between the fixed pin and the gas inlet, thereby avoiding the leakage of the reaction gas from the gas inlet to the outside, further reducing the loss of the reaction gas during the transmission process, and further ensuring the yield of the wafer product. Description of the Drawings

[0025] Figure 1 is a three-dimensional structural schematic diagram of the connecting structure in the specific embodiment of the present utility model;

[0026] Figure 2 is a cross-sectional schematic diagram of the connecting structure in the specific embodiment of the present utility model;

[0027] Figure 3 is a structural schematic diagram of the semiconductor epitaxial device in the specific embodiment of the present utility model. Specific Embodiments

[0028] The following will make a detailed description of the specific embodiments of the connecting structure and the semiconductor epitaxial device provided by the present utility model with reference to the drawings.

[0029] This specific embodiment provides a connection structure, Figure 1 This is a three-dimensional structural diagram of the connection structure in a specific embodiment of the utility model. Figure 2 It is a cross-sectional schematic diagram of the connection structure in a specific embodiment of the present utility model. Figure 1 and Figure 2 As shown, the connection structure includes:

[0030] A connecting pipe body 10 extends along a first direction D1, the connecting pipe body 10 includes a gas inlet 22 and a gas outlet 11 that are relatively distributed along the first direction D1, and the gas inlet 22 is connected to the gas outlet 11. The connecting pipe body 10 also has a pin hole located between the gas inlet 22 and the gas outlet 11;

[0031] A fixing pin 20 passes through the pin hole and extends along a second direction D2 to the interior of the connecting tube body 10 , wherein the first direction D1 and the second direction D2 intersect perpendicularly;

[0032] A first sealing ring 21 is located on the inner wall of the connecting tube body 10 and is distributed between the fixing pin 20 and the gas outlet 11;

[0033] The second sealing ring 12 is distributed around the outer wall of the connecting pipe body 10 , and the second sealing ring 12 seals the pin hole.

[0034] For example, the connecting pipe body 10 may be cylindrical. The connecting pipe body 10 extends along the first direction D1, and a connecting channel penetrating the connecting pipe body 10 along the first direction D1 is provided inside the connecting pipe body 10. One end of the connecting channel serves as the gas inlet 22, and the other end serves as the gas outlet 11. The reaction gas is transmitted inside the connecting pipe body 10 in the direction from the gas inlet 22 to the gas outlet 11. The connecting pipe body 10 is used to connect two structural components. For example, the connecting pipe body 10 connects an inlet pipe and a nozzle. The connecting pipe body 10 includes an inner wall facing the connecting channel and an outer wall opposite to the inner wall 101. The connecting pipe body 10 further has a pin hole located between the gas inlet 22 and the gas outlet 11. The pin hole continuously penetrates the inner wall and the outer wall along the second direction D2. The fixing pin 20 passes through the pin hole and extends into the connecting channel along the second direction D2, and is used to fix the structural components connected by the connecting pipe body 10. The first sealing ring 21 is fixed on the inner wall 101 of the connecting pipe body 10, and the first sealing ring 21 is distributed between the fixing pin 20 and the gas outlet 11, and is used to seal the gap between the connecting pipe body 10 and the structural components. The second sealing ring 12 is connected to the outer wall of the connecting pipe body 10 and is distributed around the outer circumference of the connecting pipe body 10. The second sealing ring 12 seals the pin hole, that is, the second sealing ring 12 covers the pin hole, so as to prevent the reaction gas from leaking from the fixing pin 20 (i.e., the pin hole).

[0035] In this specific embodiment, by providing the first sealing ring 21 and the second sealing ring 12, the leakage of the reaction gas from the connecting pipe body 10 is reduced or even avoided, thereby reducing the accumulation of particulate matter generated by the leaked reaction gas at the opening of the structural component (such as the nozzle orifice) or on the outer surface of the structural component, avoiding the appearance defect of the wafer, and ensuring the yield of the wafer product. Moreover, in this specific embodiment, the second sealing ring 12 for sealing the pin hole is arranged on the outer wall of the connecting pipe body 10, which not only helps to increase the area of the second sealing ring 12, thereby further improving the sealing effect, but also avoids occupying the space of the connecting channel inside the connecting pipe body 10, ensuring the normal connection function of the connecting structure.

[0036] In some embodiments, the connecting pipe body 10 is a Teflon pipe body, and the second sealing ring 12 is a Teflon sealing ring. In one example, the connecting pipe body 10 and the second sealing ring 12 can be formed synchronously by an integral molding process to simplify the manufacturing process of the connecting structure.

[0037] In some embodiments, the width of the second sealing ring 12 along the first direction D1 is greater than the diameter of the pin hole, and the width of the second sealing ring 12 is greater than the width of the first sealing ring 21.

[0038] In one example, the width of the second sealing ring 12 along the first direction D1 is 1.5 to 2 times the diameter of the pin hole, so as to fully seal the pin hole while reducing the manufacturing cost of the connection structure. The width of the first sealing ring 21 (for example, the width of the first sealing ring 21 along the first direction D1) is less than the width of the second sealing ring 12 (for example, the width of the second sealing ring 12 along the first direction D1), so as to fully seal the gap between the inner wall 101 of the connecting pipe body 10 and the structural component while avoiding occupying too much space in the inner part (i.e., the connecting channel) of the connecting pipe body 10 and ensuring the smooth connection between the structural components.

[0039] In order to further enhance the sealing effect of the gap between the inner wall 101 of the connecting pipe body 10 and the structural component, in some embodiments, there are a plurality of the first sealing rings 21 between the fixing pin 20 and the gas outlet 11, and the plurality of the first sealing rings 21 are arranged at intervals along the first direction D1. The plurality referred to in this specific embodiment means more than two.

[0040] In some embodiments, the connection structure further includes:

[0041] A third sealing ring 23, located on the inner wall 101 of the connecting pipe body 10, and the third sealing ring 23 is distributed between the fixing pin 20 and the gas inlet 22.

[0042] For example, as Figure 2 shown, the inner wall 101 of the connecting pipe body 10 includes a first connection area 25 and a second connection area 24 that are spaced apart along the first direction D1. The first connection area 25 has a first connection thread for connecting with a first structural component (such as an inlet pipe). The second connection area 24 has a second connection thread for connecting with a second structural component (such as a nozzle). The first sealing ring 21 is arranged on the surface of the second connection area 24 for sealing the gap between the second connection area 24 and the second structural component. The third sealing ring 23 is arranged on the surface of the first connection area 25 for sealing the gap between the first connection area 25 and the first structural component. By providing the third sealing ring 23, the leakage of the reaction gas is further reduced, and the aggregation of particulate matter generated by the reaction gas on the surface of the structural component (such as the first structural component) is avoided, thereby further improving the yield of the machine product.

[0043] This specific embodiment also provides a semiconductor epitaxial device. Figure 3 It is a schematic structural diagram of the semiconductor epitaxial device in the specific embodiment of the present utility model. For the schematic diagram of the connection structure in the semiconductor epitaxial device, reference can be made to Figure 1 and Figure 2 . As shown in Figures 1-3 , the semiconductor epitaxial device includes:

[0044] A substrate 30, including a bearing surface and a bottom surface that are oppositely distributed along a first direction D1;

[0045] A nozzle 32, penetrating the substrate 30 along the first direction D1;

[0046] An intake pipe 31, located below the substrate 30 along the first direction D1;

[0047] A connection structure, the connection structure includes a connection pipe body 10, a fixing pin 20, a first sealing ring 21 and a second sealing ring 12. The connection pipe body 10 extends along the first direction D1. The connection pipe body 10 includes a gas inlet 22 and a gas outlet 11 that are oppositely distributed along the first direction D1, and the gas inlet 22 is communicated with the gas outlet 11. The intake pipe 31 extends from the gas inlet 22 into the connection pipe body 10, and the nozzle 32 extends from the gas outlet 11 into the connection pipe body 10. The connection pipe body 10 also has a pin hole located between the gas inlet 22 and the gas outlet 12. The fixing pin 20 passes through the pin hole and extends along a second direction D2 into the connection pipe body 10. The first sealing ring 21 is located on the inner wall 101 of the connection pipe body 10, and the first sealing ring 21 is distributed between the inner wall of the connection pipe body 10 and the nozzle 32. The second sealing ring 12 is distributed around the outer wall of the connection pipe body 10, and the second sealing ring 12 seals the pin hole. The first direction D1 is perpendicular to the second direction D2 and intersects.

[0048] For example, the substrate 30 can be a graphite substrate. The substrate 30 has a channel 33 that penetrates the substrate 30 along the first direction D1, and the nozzle 32 is embedded in the channel 33. The nozzle 32 includes a nozzle opening 321 and an inlet that are oppositely distributed along the first direction D1. The nozzle opening 321 of the nozzle 32 protrudes from the bearing surface of the substrate 30 along the first direction D1. The inlet of the nozzle 32 is inserted into the connection pipe body 10 from the gas outlet 11 of the connection structure, and the intake pipe 31 is inserted into the connection pipe body 10 from the gas inlet 22 of the connection structure, so as to realize the connection between the nozzle 32 and the intake pipe 31 through the connection structure.

[0049] In this specific embodiment, by providing the first sealing ring 21 and the second sealing ring 12, leakage of reaction gas from the connecting pipe body 10 is reduced or even avoided, thereby reducing the accumulation of particulate matter generated by the leaked reaction gas on the nozzle orifice 321 of the nozzle 32 and the outer surface of the nozzle 32, avoiding appearance defects of the wafer product, and ensuring the yield of the wafer product. Moreover, in this specific embodiment, the second sealing ring 12 for sealing the pin hole is provided on the outer wall of the connecting pipe body 10, which not only helps to increase the area of the second sealing ring 12, thereby further improving the sealing effect, but also avoids occupying the space of the connecting channel inside the connecting pipe body 10, ensuring the normal connection function of the connecting structure.

[0050] In order to further enhance the sealing effect of the gap between the inner wall 101 of the connecting pipe body 10 and the nozzle 32, in some embodiments, there are a plurality of the first sealing rings 21 between the inner wall 101 of the connecting pipe body 10 and the nozzle 32, and the plurality of the first sealing rings 21 are arranged at intervals along the first direction D1.

[0051] In some embodiments, the width of the second sealing ring 12 along the first direction D1 is greater than the diameter of the pin hole, and the width of the second sealing ring 12 is greater than the width of the first sealing ring 21.

[0052] In one example, the width of the second sealing ring 12 along the first direction D1 is 1.5 to 2 times the diameter of the pin hole, thereby fully sealing the pin hole while reducing the manufacturing cost of the connecting structure. The width of the first sealing ring 21 (for example, the width of the first sealing ring 21 along the first direction D1) is less than the width of the second sealing ring 12 (for example, the width of the second sealing ring 12 along the first direction D1), thereby fully sealing the gap between the inner wall 101 of the connecting pipe body 10 and the nozzle 32 while avoiding occupying too much space inside the connecting pipe body 10 and ensuring the smooth connection between the nozzle 32 and the intake pipe 31.

[0053] In some embodiments, the connecting pipe body 10 is a Teflon pipe body, the second sealing ring 12 is a Teflon sealing ring, and the connecting pipe body 10 is fixedly connected to the second sealing ring 12.

[0054] In some embodiments, the connection structure further includes a third sealing ring 23 located on the inner wall 101 of the connection pipe body 10, and the third sealing ring 23 is distributed between the inner wall 101 of the connection pipe body 10 and the intake pipe 31. By providing the third sealing ring 23, the leakage of the reaction gas is further reduced, and the accumulation of particulate matter generated by the reaction gas on the outer surface of the intake pipe 31 is avoided, thereby further improving the yield of the machine products.

[0055] For the connection structure and the semiconductor epitaxial device provided by this specific embodiment, by providing the first sealing ring and the second sealing ring, and the first sealing ring is located on the inner wall of the connection pipe body and is distributed between the fixing pin and the gas outlet, and the second sealing ring is distributed around the outer wall of the connection pipe body and seals the pin hole. On the one hand, the first sealing ring avoids the leakage of the reaction gas from the gas outlet of the connection structure to the outside; on the other hand, the second sealing ring avoids the leakage of the reaction gas from the pin hole of the fixing pin to the outside. The synergistic effect of the above two aspects reduces the leakage of the reaction gas, thereby reducing the accumulation of particulate matter generated by the leaked reaction gas on the nozzle orifice or the outer surface, avoiding the appearance defect of the wafer, and ensuring the yield of the wafer product. This specific embodiment also provides a third sealing ring on the inner wall of the connection pipe body between the fixing pin and the gas inlet, thereby avoiding the leakage of the reaction gas from the gas inlet to the outside, further reducing the loss of the reaction gas during transmission, and further ensuring the yield of the wafer product.

[0056] The above are only the preferred embodiments of the present invention. It should be noted that for those of ordinary skill in the art, without departing from the principle of the present invention, several improvements and modifications can be made, and these improvements and modifications should also be regarded as the protection scope of the present invention.

Claims

1. A connecting structure, characterized in that, Comprising: A connecting pipe body extending along a first direction, the connecting pipe body including a gas inlet and a gas outlet that are oppositely distributed along the first direction, and the gas inlet communicating with the gas outlet. The connecting pipe body further has a pin hole located between the gas inlet and the gas outlet. A fixing pin passing through the pin hole and extending into the interior of the connecting pipe body along a second direction, and the first direction intersecting perpendicularly with the second direction. A first sealing ring located on the inner wall of the connecting pipe body, and the first sealing ring being distributed between the fixing pin and the gas outlet. A second sealing ring distributed around the outer wall of the connecting pipe body, and the second sealing ring sealing the pin hole.

2. The connection structure according to claim 1, characterized in that The connecting pipe body is a Teflon pipe body, and the second sealing ring is a Teflon sealing ring.

3. The connection structure according to claim 1, wherein The width of the second sealing ring along the first direction is greater than the diameter of the pin hole, and the width of the second sealing ring is greater than the width of the first sealing ring.

4. The connection structure according to claim 1, characterized in that, There are a plurality of the first sealing rings between the fixing pin and the gas outlet, and the plurality of the first sealing rings are arranged at intervals along the first direction.

5. The connection structure according to claim 1, wherein Further comprising: A third sealing ring located on the inner wall of the connecting pipe body, and the third sealing ring being distributed between the fixing pin and the gas inlet.

6. A semiconductor epitaxial device, characterized in that, Comprising: A substrate including a bearing surface and a bottom surface that are oppositely distributed along a first direction. A nozzle penetrating the substrate along the first direction. An air inlet pipe located below the substrate along the first direction. A connecting structure, the connecting structure including a connecting pipe body, a fixing pin, a first sealing ring and a second sealing ring. The connecting pipe body extends along a first direction, the connecting pipe body including a gas inlet and a gas outlet that are oppositely distributed along the first direction, and the gas inlet communicating with the gas outlet. The air inlet pipe extends from the gas inlet into the connecting pipe body, the nozzle extends from the gas outlet into the connecting pipe body. The connecting pipe body further has a pin hole located between the gas inlet and the gas outlet. The fixing pin passes through the pin hole and extends into the interior of the connecting pipe body along a second direction. The first sealing ring is located on the inner wall of the connecting pipe body, and the first sealing ring is distributed between the inner wall of the connecting pipe body and the nozzle. The second sealing ring is distributed around the outer wall of the connecting pipe body, and the second sealing ring seals the pin hole. The first direction intersects perpendicularly with the second direction.

7. The semiconductor epitaxial device according to claim 6, wherein, There are a plurality of the first sealing rings between the inner wall of the connecting pipe body and the nozzle, and the plurality of the first sealing rings are arranged at intervals along the first direction.

8. The semiconductor epitaxial device according to claim 6, wherein The width of the second sealing ring along the first direction is greater than the diameter of the pin hole, and the width of the second sealing ring is greater than the width of the first sealing ring.

9. The semiconductor epitaxial device according to claim 6, wherein The connecting pipe body is a Teflon pipe body, and the second sealing ring is a Teflon sealing ring, and the connecting pipe body is fixedly connected to the second sealing ring.

10. The semiconductor epitaxial device according to claim 6, wherein, The connecting structure further includes a third sealing ring located on the inner wall of the connecting pipe body, and the third sealing ring is distributed between the inner wall of the connecting pipe body and the air inlet pipe.

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