Rinse station and device for producing contact metallization on bonding surface of wafer

Abstract

The utility model relates to a flushing station (10), which comprises a basin (12) which forms a process cavity (11) and is used for containing flushing fluid especially containing deionized water, the flushing station is used for flushing a wafer (14) which can be contained in the process cavity, the basin is provided with at least one inlet (15) which is used for leading the flushing fluid into the basin, the inlet is formed into a nozzle device (16), and the nozzle device (16) is arranged on the basin. Wherein the nozzle device has at least one nozzle (17), by means of which the rinsing liquid can be applied against the wafer, and wherein the nozzle is designed as a fan-shaped nozzle or as a solid-ball nozzle or as a hollow-ball nozzle. In addition, the utility model relates to a device for generating the contact metallization part on the connection surface of the wafer.

Description

Field of the Invention

[0001] The present utility model relates to a rinsing station, the rinsing station comprising a basin forming a process chamber for receiving a rinsing liquid, in particular deionized water, for rinsing wafers that can be received in the process chamber, wherein the basin has at least one inlet for introducing the rinsing liquid into the basin. Furthermore, the present utility model relates to a device for producing a contact metallization on a bonding surface of a wafer, the device comprising at least one such rinsing station. Background Art

[0002] Producing a contact metallization, also known in the art as Under Bump Metallizations (UBM) on the bonding surface of a chip is carried out at the wafer level in accordance with standards, that is to say, the entire wafer having a plurality of chips formed thereon undergoes a chemical process before the chips are separated from the wafer, wherein an intermediate metallization, called Under Bump Metallization, is applied to the bonding surface of the chips, the intermediate metallization serving as an attachment base for subsequently applied solder bumps made of a solder material, wherein the bonding surface has a surface metallization made of aluminum or copper in its initial state. Finally, the chips are separated from the wafer only after the solder bumps have been applied.

[0003] Devices for producing such a contact metallization on the bonding surface of a wafer, known for example from CN 203760439 U and DE 20 2022 105 493U1, typically comprise: at least one cleaning station in which the wafer is cleaned with a cleaning liquid, such as nitric acid; at least one deposition station in which the contact metal is deposited electrolessly or electroplated from a metal solution onto the bonding surface according to the design of the device, the metal solution usually having a metal dissolved in a liquid, such as nitric acid, in particular nickel, zinc, palladium, gold, etc.; at least one rinsing station in which the wafer surface is rinsed or cleaned with a rinsing liquid, in particular deionized water, especially for removing residues from the deposition station or the cleaning station; and at least one drying station in which the wafer surface is dried.

[0004] Such a rinsing station typically comprises a basin forming a process chamber for receiving a rinsing liquid for rinsing wafers that can be received in the process chamber. The rinsing liquid is introduced into the basin via an inlet of the basin, which in practice is formed by a simple opening or a simple hole.

[0005] In such a rinsing station, in particular, the rinsing liquid introduced into the basin through this inlet while the wafer is accommodated in the process chamber cannot achieve optimal rinsing or cleaning of the wafer. In optimal rinsing or cleaning, residues on the wafer surface are substantially eliminated without residue. The significant drawback causes a decrease in the quality of the contact metallization produced by means of an apparatus for producing contact metallization including such a rinsing station. Summary of the Utility Model

[0006] Therefore, the present utility model is based on the following object, to provide a rinsing station and an apparatus for producing contact metallization, which can achieve improved rinsing or cleaning of the wafer or produce contact metallization with higher quality.

[0007] The above object is achieved by a rinsing station having the features of the present utility model and an apparatus for producing contact metallization having the features of the present utility model.

[0008] The rinsing station according to the present utility model includes a basin for accommodating a rinsing liquid, in particular a rinsing liquid containing deionized water, which forms a process chamber. The rinsing station is used for rinsing a wafer that can be accommodated in the process chamber. The basin has at least one inlet for introducing the rinsing liquid into the basin. The inlet is configured as a nozzle device. The nozzle device has at least one nozzle. By means of the nozzle, the rinsing liquid can be applied to the wafer in an aligned manner. The nozzle is configured as a fan nozzle or a solid ball nozzle or a hollow ball nozzle.

[0009] According to the present utility model, a rinsing station includes a basin that forms a process chamber for accommodating a rinsing liquid, in particular a rinsing liquid containing deionized water, and the rinsing station is used for rinsing wafers that can be accommodated in the process chamber. In principle, the rinsing station can be used to rinse any object suitable for undergoing a rinsing process, and the material of the object can include metal materials and / or plastics and / or ceramic materials. The rinsing station is however particularly suitable for rinsing wafers, and in the rinsing process, the wafer surface of the wafer can be rinsed or cleaned. The rinsing liquid can contain deionized water. In addition to deionized water, the rinsing liquid can contain additives, in particular solvents such as isopropyl alcohol (IPA). The rinsing liquid can be deionized water. Deionized water is also referred to as demineralized water. Depending on the purity of the deionized water, it is possible to distinguish between purified water or fresh water, ultrapure water or pure water, and high-purity water. Here, the remaining conductivity of the deionized water decreases from purified water or fresh water through ultrapure water or pure water to high-purity water. Preferably, the deionized water can be high-purity water in order to achieve optimal rinsing results. The basin can have an opening through which the wafer can be preferably inserted into the process chamber from above to perform the rinsing process and removed from the process chamber again after the rinsing process. In addition, the basin can have a quadrilateral, in particular rectangular, base surface or cross-section. In addition, the basin can have a bottom wall and four side walls. The bottom wall and the side walls can delimit the process chamber, and the process chamber can extend from the bottom wall to the opening. The four side walls can include two longitudinal walls and two transverse walls. Preferably, the longitudinal walls are formed longer than the transverse walls. The longitudinal walls can also have the same length as the transverse walls.

[0010] According to the present utility model, the basin has at least one inlet for introducing a rinsing liquid into the basin, wherein the inlet is configured as a nozzle device, and the nozzle device has at least one nozzle by means of which the rinsing liquid can be applied to the wafer, and the nozzle is configured as a fan nozzle, which is also referred to as a flat jet nozzle (Flachstrahldüse), or is configured as a solid ball nozzle or a hollow ball nozzle. Thus, the basin has at least one inlet, preferably provided laterally at the basin, configured as a nozzle device, and the nozzle device has at least one nozzle configured as a fan nozzle or a solid ball nozzle or a hollow ball nozzle, by means of which the rinsing liquid can be applied or sprayed onto the wafer when the wafer is received in the basin, and the design of the nozzle as a fan nozzle or a solid ball nozzle or a hollow ball nozzle enables the jet of the rinsing liquid formed by the nozzle to advantageously fan out or spread out. This fanned-out or spread-out jet causes optimal rinsing or cleaning of the wafer. Preferably, the nozzle device has at least two, particularly preferably at least three nozzles. The nozzle device can thus have a plurality of nozzles. Here, the fan nozzles, solid ball nozzles and / or hollow ball nozzles can be combined with each other. Preferably, the nozzles can be arranged at at least one side wall of the basin, preferably at two opposite side walls of the basin. Preferably, the nozzles can be arranged in the region of the edge of the side wall at the corresponding side wall, preferably in rows, and the nozzles in the corresponding rows are preferably arranged at the same spacing from each other. It is also conceivable that the nozzles are arranged at all four side walls of the basin so that the wafer can be rinsed all around. In addition, the nozzles can be configured such that the jet angle, i.e., the angle at which the corresponding jet can be output from the corresponding nozzle, can be set. If the rinsing station is part of a device for producing a contact metallization, then the rinsing station can enable the production of a contact metallization of higher quality, especially because residues from the deposition process performed by the deposition station of the device before the rinsing process or from the cleaning process performed by the cleaning station of the device before the rinsing process can be substantially eliminated without residue.

[0011] Advantageously, the basin can have an outlet for discharging the rinsing liquid from the basin, which is preferably provided at the bottom side of the basin and is preferably configured as a free outflow. During the rinsing process, residues can be transferred from the wafer surface of the wafer into the rinsing liquid, thereby contaminating the rinsing liquid. The residues can be caused, for example, by a deposition station of a device including a rinsing station for producing a contact metallization or by the rinsing station of the device. Via the outlet, the rinsing liquid contaminated during wafer rinsing can be discharged from the basin. The basin can also be completely discharged via the outlet, that is, emptied. The discharging or emptying can be carried out relatively slowly or relatively quickly. If the outlet is configured as a free outflow, the discharging of the rinsing liquid or the emptying of the basin can be carried out quickly without backflow. In addition to the cleaning effect that can be obtained from applying the rinsing liquid to the wafer by means of a nozzle and, if necessary, immersing the wafer in the rinsing liquid-filled basin when inserting the wafer into the basin, another cleaning effect can be advantageously obtained as follows: The basin filled with the rinsing liquid can be emptied relatively quickly via the free outflow leaving the basin by the adhesion of the rinsing liquid to the wafer surface when the wafer is disposed in the basin. The rinsing process can include a plurality of successive rinsing cycles, wherein in one rinsing cycle, the basin is emptied by discharging the contaminated rinsing liquid from the basin via the outlet while the wafer is disposed in the basin and is then refilled by introducing fresh rinsing liquid, in particular via an inlet, into the basin. Here, fresh rinsing liquid can also be introduced into the basin via the inlet during the discharging of the contaminated rinsing liquid from the basin via the outlet. The basin can still be emptied as a whole at this time because more contaminated rinsing liquid can be discharged from the basin per unit time in volume via the outlet than fresh rinsing liquid is introduced into the basin via the inlet. The inlet can be connected to a container, which can be part of the rinsing station, in which fresh rinsing liquid can be stored. The outlet can also be connected to a container, which is part of the rinsing station, into which the contaminated rinsing liquid can be led out or stored. The outlet can also be connected to a common wastewater network. If the wafer is clean or free of residues after a specific number of rinsing cycles have been performed, the wafer can be removed from the basin. After the rinsing process, the basin can be emptied before or after removing the wafer from the basin and then refilled again when removing the wafer from the basin, so that the rinsing station is available for performing the rinsing process at another wafer. In the rinsing process, there can also be a process step in which the same amount of contaminated rinsing liquid is discharged from the basin per unit time in volume as fresh rinsing liquid is introduced into the basin via the inlet, whereby continuous and uniform rinsing of the wafer can be carried out.

[0012] Advantageously, the rinsing station can include a sample analysis device which can be configured to analyze a sample in the rinsing liquid extracted from the basin. By means of the sample analysis device, the purity of the rinsing liquid can be determined or measured, based on which it can be evaluated whether the wafer is clean or free of residues, and based on this, the rinsing process can be interrupted.

[0013] Advantageously, the basin can have an overflow opening, wherein the sample analysis device can be connected to the overflow opening such that a sample can be extracted from the rinsing liquid discharged from the basin via the overflow opening. For this purpose, a bypass of the basin can be provided externally at the basin, via which the rinsing liquid discharged from the basin via the overflow opening can be conveyed to the sample analysis device. The bypass can have a discharge section which can lead into the overflow vessel of the sample analysis device, from where the rinsing liquid can reach the sample sensor of the sample analysis device for the measuring probe of the sample analysis device via the measuring section of the sample analysis device for calming and preventing dry running. The measuring section can be formed integrally with the overflow vessel. After emptying the basin by discharging the rinsing liquid via the outlet, the rinsing liquid can then be introduced into the basin via the inlet, at least until the liquid level of the rinsing liquid in the basin reaches the overflow opening, which can be provided at at least one side wall of the basin. The sample can be extracted from the basin in a simple manner via the overflow opening without the need for additional extraction means such as a pump or the like. It is also conceivable that the sample analysis device is connected to the outlet such that a sample can be extracted during the discharge of the rinsing liquid from the basin via the outlet. Preferably, a nozzle can be provided below the overflow opening.

[0014] Advantageously, the side walls of the basin can each have perforations preferably formed in the region of the edge of the side wall, and the perforations can form the overflow opening. The perforations can be formed in the configuration of a hole device which can have a plurality of holes preferably arranged in a row. Preferably, the perforations or the hole device can have a row of holes extending parallel to the edge in the region of the opening of the basin of the respective side wall. The holes can preferably be formed in the same way. In principle, the size or geometry of the cross-section of the holes can be appropriately selected. For example, the holes can have a cross-section with a circular or square geometry. The configuration of the overflow opening as a perforation provided in the side wall can enable the extraction of a sample representing the purity of the rinsing liquid in the entire basin, i.e., not only locally in the basin.

[0015] Advantageously, the basin can be configured such that a transport receptacle is inserted into the basin from above, and the transport receptacle has a plurality of wafers accommodated therein. Thereby, it is feasible that a plurality of wafers are simultaneously subjected to the rinsing process. The transport receptacle can be formed in the configuration of a basket. In the transport receptacle, the wafers can be arranged in parallel side by side at a uniform spacing in a vertical or horizontal orientation. Support elements of the basin can be provided on the bottom wall of the basin, and the transport receptacle together with the wafers accommodated therein can be supported on the support elements.

[0016] Advantageously, the basin can have another inlet for introducing the flushing liquid into the basin. The other inlet can be configured in the form of at least one opening or at least one hole. Preferably, the other inlet can be laterally provided at the basin. Here, the other inlet can be provided at at least one side wall of the basin, preferably at two opposite side walls, preferably adjacent to the edge in the region of the bottom wall of the respective side wall. Providing the other inlet enables the basin to be filled or flooded relatively quickly. The flushing liquid can be introduced into the basin via the inlet and the other inlet simultaneously.

[0017] Advantageously, the flushing station can have at least one pipe device connected to the inlet. In addition, the flushing station can include another pipe device connected to the other inlet. The pipe device can include a first distribution sleeve connected to the nozzle and a second distribution sleeve configured separately from the first distribution sleeve and connected to another nozzle. The other pipe device can be configured as a third distribution sleeve. The first and second distribution sleeves or the third distribution sleeve can each have or can have a joint for connecting the respective distribution sleeve to an inlet line for introducing the flushing liquid or to an outlet line for discharging the flushing liquid. The inlet line can be connected to a container for fresh flushing liquid and the outlet line can be connected to a container for contaminated liquid or a common wastewater network.

[0018] Advantageously, the flushing station can include a control device which can be configured at least for controlling the introduction of the flushing liquid into the basin via the inlet. In addition, the control device can be configured for controlling the introduction of the flushing liquid into the basin via the other inlet and / or for discharging the flushing liquid from the basin from the outflow section. The basin can include valves associated with the inlet and / or the other inlet and / or the outlet. The valves can be controlled by means of the control device. Here, the nozzle can be associated with a common valve, and another nozzle can be associated with another common valve. Each nozzle or another nozzle can also be associated with its own valve. The control device can interact with the sample analysis device such that the analysis results obtained by means of the sample analysis device, in particular the purity of the flushing liquid, can be fed to the control device such that the control device can manipulate the valves in relation to the analysis results. The control device can in particular control the flushing time and / or the flushing volume.

[0019] Advantageously, the flushing station can include a liquid level measuring device which can be configured for measuring the liquid level in the basin. The control device can interact with the liquid level measuring device such that the liquid level measured by means of the liquid level measuring device can be fed to the control device such that the control device can manipulate the valves according to the liquid level.

[0020] Advantageously, the basin can have a preferably pivotable lid that can cover the opening of the basin in the closed position of the lid. By means of the lid, the heat exchange between the rinsing liquid in the basin and the environment can be reduced. In addition, the rinsing liquid in the basin can be protected from external contamination. Thus, spraying mist can also be avoided. Then, in order to insert the wafer into the process chamber or to remove the wafer from the process chamber, the lid can be opened and then closed again. The lid can also be configured to be pushable or otherwise openable or closable.

[0021] Advantageously, the nozzle device can have at least one additional nozzle by means of which the rinsing liquid can be applied to the lid, wherein the additional nozzle can preferably be configured as a fan nozzle or a solid ball nozzle or a hollow ball nozzle. Preferably, the nozzle device has at least two additional nozzles. The nozzle device can thus have a plurality of additional nozzles. Here, the fan nozzle, the solid ball nozzle and / or the hollow ball nozzle can be combined with each other. Preferably, the additional nozzles can be arranged at at least one side wall of the basin, preferably at two opposite side walls of the basin that are preferably not provided with the nozzles. Preferably, the additional nozzles can be arranged in the region of the edge of the side wall at the respective side wall, preferably in rows, wherein the additional nozzles are arranged in rows, preferably at equal intervals from each other. It is also conceivable that the additional nozzles are arranged at all four side walls of the basin so that a full-surface rinsing of the lid can be carried out. In addition, the additional nozzles can be configured such that the jet angle, i.e., the angle at which the respective jet can emerge from the respective additional nozzle, can be set. By means of the additional nozzles, the lid can be rinsed or cleaned, thereby preventing contamination of the lid that causes contamination of the wafer or can distort the analysis result due to contamination of the rinsing liquid. If the additional nozzle is configured as a fan nozzle or a solid ball nozzle or a hollow ball nozzle, then the preferably fan-shaped or expanded jet formed thereby causes an optimized rinsing or cleaning of the lid. Preferably, the additional nozzles can be arranged above the overflow opening. By means of the additional nozzles, the rinsing liquid can be applied to the wafer. Depending on whether the wafer is arranged in the process chamber parallel or transverse to the longitudinal extension direction of the basin, especially depending on the size of the wafer, for example whether the wafer is an 8-inch wafer or a 12-inch wafer, the additional nozzles can be set such that the jet is directed at the wafer. The rinsing station can especially be set up for rinsing 8-inch wafers and / or 12-inch wafers.

[0022] Advantageously, the rinsing station can include a temperature control device for regulating the temperature of the rinsing liquid, preferably before it is introduced into the basin. The temperature control device can include a heat exchange device. With the aid of the temperature control device, the temperature of the rinsing liquid can be increased and / or decreased. It is also possible to mix cold rinsing liquid with hot rinsing liquid, wherein the desired mixed temperature can be achieved by mixing cold rinsing liquid with hot rinsing liquid in corresponding proportions. The rinsing station can also include a temperature measuring device, which can measure the temperature of the rinsing liquid before it is introduced into the basin and / or the temperature of the rinsing liquid in the basin. The control device can interact with the temperature measuring device so that the temperature measured by the temperature measuring device can be fed to the control device so that the control device can actuate the valve according to the temperature.

[0023] In a method for rinsing a wafer using a rinsing station, the wafer can be accommodated in a process chamber formed by a basin of the rinsing station. The wafer can be inserted into a process chamber filled with a rinsing liquid, particularly a rinsing liquid containing deionized water, wherein the wafer can be sunk into or immersed in the rinsing liquid. By sinking or immersing in the rinsing liquid, the wafer can be cleaned. Subsequently, the basin can be emptied of the rinsing liquid by directing the rinsing liquid from the basin through an outlet, preferably provided on the bottom side of the basin and preferably configured as a free outflow portion. Subsequently, the basin can be filled with rinsing liquid by introducing the rinsing liquid into the basin via at least one inlet of the basin. The rinsing liquid can be applied toward the wafer using at least one nozzle of a nozzle device configured as a fan nozzle, a solid ball nozzle, or a hollow ball nozzle, the inlet of which can be configured as the nozzle device. By applying the rinsing liquid to the wafer, the wafer can be rinsed. This further cleans the wafer. After filling the basin, a sample of the rinsing liquid can be extracted from the basin, wherein the sample can be analyzed using a sample analysis device of the rinsing station. Based on the analysis results, in particular the purity of the rinsing liquid determined by a sample analysis device, it can be inferred whether the wafer is clean. The steps of emptying the basin of contaminated rinsing liquid, filling the basin with fresh rinsing liquid, and extracting and analyzing a sample of the rinsing liquid can be repeated until the wafer is clean. If the analysis indicates that the wafer is clean, the basin can be emptied while the wafer is in the process chamber. The wafer can then be removed from the process chamber. Alternatively, the basin can be emptied after the wafer is removed from the process chamber. The basin can then be filled with rinsing liquid. The rinsing station can then be used to rinse another wafer.

[0024] The wafer can also be inserted into an empty or partially filled basin, wherein the basin can then be filled. Subsequently, the sample can be extracted and analyzed.

[0025] A “filled basin” refers to a state of the basin in which the basin is filled to a desired level, in particular in which the flushing liquid in the basin is at a level at the height of the overflow of the basin.

[0026] For the advantageous effects of the method, reference is made to the advantages described for the rinsing station according to the present invention.

[0027] Other advantageous embodiments of the method result from the description of the features of the device.

[0028] The device according to the present invention for producing a contact metallization on the bonding surface of a wafer comprises at least one rinsing station according to the present invention, wherein the process chamber of the rinsing station is configured to receive a transport receptacle which has a plurality of wafers received therein, and wherein the device has a handling device for operating the transport receptacle.

[0029] Advantageously, the device can comprise a plurality of workstations preferably arranged in a line, each of the workstations having a process chamber for receiving the transport receptacle together with the wafers received therein, wherein the plurality of workstations can include a rinsing station as a workstation, wherein the device can have a conveying device at which the handling device can be arranged, and wherein, in the conveying direction, the handling device can cooperate with the conveying device to enable the transport receptacle to be arranged in an optional sequence in the process chambers.

[0030] Advantageously, the handling device can have a horizontally movable carrier connected to the conveyor belt of the conveying device, the carrier having at least one clamping arm vertically movable relative to the carrier.

[0031] Advantageously, the device can comprise an input / output station for loading the device with at least one transport receptacle and / or the plurality of workstations can include at least one deposition station, at least one cleaning station and / or at least one drying station. The deposition station is configured to deposit a metal, in particular nickel, zinc, palladium, gold, etc., on the bonding surface, in particular without current or by electroplating. The metal can be dissolved in a liquid, such as nitric acid. The solution composed of the metal dissolved in the liquid can be received in the process chamber of the deposition station. The cleaning station can be configured to clean the wafers, in particular the bonding surface, with a cleaning liquid, such as nitric acid. The cleaning liquid can be received in the process chamber of the cleaning station. The drying station can be configured to dry the wafers, in particular the wafer surface. Description of the Drawings

[0032] Hereinafter, the preferred embodiments of the present invention will be described in detail with reference to the drawings.

[0033] The drawings show:

[0034] Figure 1 A perspective view of the rinsing station shown from the side from the upper right obliquely;

[0035] Figure 2 A perspective view of the rinsing station shown from the side from the upper left obliquely;

[0036] Figure 3Shows a top view of the rinsing station;

[0037] Figure 4 Shows a sectional view of the rinsing station;

[0038] Figure 5 Shows another sectional view of the rinsing station;

[0039] Figure 6 Shows a three - dimensional sub - view of the rinsing station in the area of the sample analysis device of the rinsing station;

[0040] Figure 7 Shows a three - dimensional view of the sample analysis device in a partially disassembled state. Detailed Description

[0041] Figures 1 to 7 An overview shows the rinsing station 10, which includes a basin 12 that forms a process chamber 11 for receiving a rinsing liquid, in particular a rinsing liquid containing deionized water, not shown here, for rinsing a plurality of wafers 14 accommodated in a transport receptacle 13 that can be accommodated in the process chamber 11. The wafers can be inserted into the basin 12 from above for performing the rinsing process or removed from the basin 12 again afterwards and are operated here by means of a manipulation device, not shown here, of a device for producing contact metallization, the components of which can be part of the rinsing station 10.

[0042] The basin 12 has an inlet 15 for introducing the rinsing liquid into the basin 12, where the inlet 15 is configured as a nozzle device 16. The nozzle device 16 has a plurality of nozzles 17 configured as fan nozzles or surface jet nozzles, by means of which the rinsing liquid can be applied to the wafers 14. Here, the nozzles 17 are arranged in rows at equal intervals from each other at two opposite longitudinal walls 18 of the basin 12. Currently, four nozzles 17 are provided at each longitudinal wall 18. The basin 12 has at least one valve, not shown here, associated with the nozzles 17. In addition, the nozzle device 16 has a plurality of further nozzles 19, also configured as fan nozzles or surface jet nozzles (Flachstrahldüsen), by means of which the rinsing liquid can be applied to the pivotable cover 20 of the basin 12, which covers the opening 21 of the cover 12 in the closed position of the cover 20. Here, the further nozzles 19 are arranged in rows at the same intervals from each other at two opposite transverse walls 22 of the basin 12. Currently, two further nozzles 19 are provided at each transverse wall 22. The cover 12 has at least one further valve, not shown here, associated with the further nozzles 19. The longitudinal walls 18 are configured to be longer than the transverse walls 22. However, it is also conceivable that the longitudinal walls 18 and the transverse walls 22 have the same length. The longitudinal walls 18 and the transverse walls 22 form the side walls 18, 22 of the basin 12.

[0043] In addition, the basin 12 has another inlet 23 for introducing the rinsing liquid into the basin 12, which is formed by two openings (not shown here) formed in the transverse walls 22, and each of the openings is arranged in the region of the edge of the respective transverse wall 22 adjacent to the bottom wall 24 of the basin 12.

[0044] In addition, the rinsing station 10 includes pipe means 25 connected to the inlet 15, wherein the pipe means 25 includes a first distribution sleeve 26 connected to the nozzle 17 and a second distribution sleeve 27 formed separately from the first distribution sleeve 26 and connected to another nozzle 19. In addition, the rinsing station 10 includes another pipe means 28 connected to another inlet, and the other pipe means is configured as a distribution sleeve.

[0045] In addition, the basin 12 has an outlet 29 formed as a free outflow part and arranged centrally at the bottom wall 24 for discharging the rinsing liquid from the basin 12. The basin 12 has a valve 30 associated with the outlet 29.

[0046] In addition, the basin 12 has an overflow opening 31, wherein the longitudinal walls 18 and the transverse walls 22 respectively have perforations 32 formed in the region of the edge of the respective longitudinal wall adjacent to the opening 21 or in the region of the edge of the respective transverse wall adjacent to the opening 21, and the perforations form the overflow opening 31. The perforations 32 have rows extending parallel to the respective edges with holes 33 in each of the longitudinal walls 18 or transverse walls 22. The nozzle 17 is arranged at the longitudinal wall 18 below the holes 33, while the other nozzle 19 is arranged at the transverse wall 22 above the holes 33.

[0047] In addition, the rinsing station 10 includes a sample analysis device 34, which is configured to analyze a sample of the rinsing liquid extracted from the basin 12. Here, the sample analysis device 34 is connected to the overflow opening 31 such that a sample can be extracted from the rinsing liquid discharged from the basin 12 via the overflow opening 31. For this purpose, a bypass 35 of the basin 12 is provided externally at the basin 12, and via which the rinsing liquid discharged from the basin 12 via the overflow opening 31 can be conveyed to the sample analysis device 34. The bypass 35 has a discharge part 36, which leads into an overflow vessel 37 of the sample analysis device 34, from where the rinsing liquid or the sample can reach a sample sensor 39 of the sample analysis device 34 for an unshown measuring probe of the sample analysis device 34 via a measuring section 38 of the sample analysis device 34 for calming and preventing dry running. The measuring section 38 can be formed integrally with the overflow vessel 37.

[0048] In addition, the rinsing station 10 includes a control device (not shown here), which is configured to control the introduction of the rinsing liquid into the basin 12 via the inlet 15 and a further inlet 23 and the discharge of the rinsing liquid from the basin 12 via the outlet 29. Here, the control device controls the valves associated with the nozzle 17, the further nozzle 19, and the outlet 29, where only the valve 30 of these valves is visible here.

[0049] In addition, the rinsing station 10 includes a level measuring device 40, which is only partially visible here, and is configured to measure the level in the basin 12.

[0050] In addition, the rinsing station 10 includes a temperature regulating device (not shown here) for regulating the temperature of the rinsing liquid before it is introduced into the basin 12.

[0051] The nozzle 17 and the further nozzle 19 are currently configured as fan nozzles or surface jet nozzles. Instead of fan nozzles or surface jet nozzles, solid ball nozzles or hollow ball nozzles can also be provided. The nozzle 17 and / or the further nozzle 19 can also be a combination of a fan nozzle or a surface jet nozzle and / or a solid ball nozzle and / or a hollow ball nozzle.

[0052] List of reference numerals

[0053] 10 Rinsing station

[0054] 11 Process chamber

[0055] 12 Basin

[0056] 13 Transport receptacle

[0057] 14 Wafer

[0058] 15 Inlet

[0059] 16 Nozzle device

[0060] 17 Nozzle

[0061] 18 Longitudinal wall

[0062] 19 Nozzle

[0063] 20 Cover

[0064] 21 Opening

[0065] 22 Transverse wall

[0066] 23 Inlet

[0067] 24 Bottom wall

[0068] 25 Pipe device

[0069] 26 Distribution sleeve

[0070] 27 Distribution sleeve

[0071] 28 Distribution sleeve

[0072] 29 Outlet

[0073] 30 Valve

[0074] 31 Overflow port

[0075] 32 Perforation

[0076] 33 Hole

[0077] 34 Specimen analysis device

[0078] 35 Bypass

[0079] 36 Discharge section

[0080] 37 Overflow vessel

[0081] 38 Measuring section

[0082] 39 Specimen sensor

[0083] 40 Liquid level measuring device

Claims

1. A rinsing station (10), said rinsing station comprising a basin (12) forming a process chamber (11) for containing a rinsing liquid, said rinsing station being adapted to rinse a wafer (14) that can be received in said process chamber, wherein said basin has at least one inlet (15) for introducing the rinsing liquid into said basin, characterized in that, said inlet is configured as a nozzle device (16), wherein said nozzle device has at least one nozzle (17), by means of which the rinsing liquid can be applied to the wafer, and wherein said nozzle is configured as a fan nozzle or a solid sphere nozzle or a hollow sphere nozzle.

2. The rinsing station according to claim 1, characterized in that, said rinsing liquid contains deionized water.

3. The rinsing station according to claim 1 or 2, characterized in that, said basin (12) has an outlet (29) for discharging the rinsing liquid from said basin.

4. The rinsing station according to claim 3, characterized in that, said outlet (29) is provided at the bottom side of said basin.

5. The rinsing station according to claim 3, characterized in that, said outlet (29) is configured as a free outflow port.

6. The rinsing station according to claim 1 or 2, characterized in that, said rinsing station (10) comprises a sample analysis device (34), said sample analysis device being configured to analyze a sample taken from the rinsing liquid extracted from said basin (12).

7. The rinsing station according to claim 6, characterized in that, said basin (12) has an overflow port (31), wherein said sample analysis device (34) is connected to said overflow port such that a sample can be taken from the rinsing liquid discharged from said basin via said overflow port.

8. The rinsing station according to claim 7, characterized in that, the side walls (18, 22) of said basin (12) each have a perforation (32), said perforation forming said overflow port (31).

9. The rinsing station according to claim 8, characterized in that, said perforation (32) is formed in the region of the edge of said side wall.

10. The rinsing station according to claim 1 or 2, characterized in that, said basin (12) is configured such that a transport receptacle (13) can be inserted into said basin from above, said transport receptacle having a plurality of wafers (14) received therein.

11. The rinsing station according to claim 1 or 2, characterized in that, said basin (12) has another inlet (23) for introducing the rinsing liquid into said basin.

12. The rinsing station according to claim 1 or 2, characterized in that, said rinsing station (10) comprises at least one pipe device (25) connected to said inlet (15).

13. The rinsing station according to claim 1 or 2, characterized in that, said rinsing station (10) comprises a control device, said control device being at least configured to control the introduction of the rinsing liquid into said basin (12) via said inlet (15).

14. The rinsing station according to claim 1 or 2, characterized in that, The rinsing station (10) includes a liquid level measuring device (40) configured to measure the liquid level in the basin (12).

15. The rinsing station according to claim 1 or 2, characterized in that the basin (12) has a lid (20) which covers the opening (21) of the basin in the closed position of the lid.

16. The rinsing station according to claim 15, characterized in that the lid (20) is pivotable.

17. The rinsing station according to claim 15, characterized in that the nozzle device (16) has at least one additional nozzle (19) by means of which rinsing liquid can be applied to the lid (20).

18. The rinsing station according to claim 17, characterized in that the additional nozzle is configured as a fan nozzle or a solid ball nozzle or a hollow ball nozzle.

19. The rinsing station according to claim 1 or 2, characterized in that the rinsing station (10) includes a temperature regulating device for regulating the temperature of the rinsing liquid.

20. The rinsing station according to claim 19, characterized in that the temperature regulating device is configured to regulate the temperature of the rinsing liquid before introducing the rinsing liquid into the basin (12).

21. An apparatus for producing a contact metallization on a bonding surface of a wafer, characterized in that the apparatus includes at least one rinsing station (10) according to any one of claims 1 to 20, wherein the process chamber of the rinsing station is configured to accommodate a transport receptacle (13) which has a plurality of wafers (14) accommodated therein, and wherein the apparatus has a manipulating device for operating the transport receptacle.

22. The apparatus according to claim 21, characterized in that the apparatus includes a plurality of workstations, each of which has a process chamber for accommodating the transport receptacle (13) which has wafers (14) accommodated therein, wherein a plurality of workstations include the rinsing station (10) as a workstation, and wherein the apparatus has a conveying device at which the manipulating device is provided, and wherein, along the conveying direction, the manipulating device and the conveying device cooperate to enable the transport receptacle to be arranged in a selectable order in the process chamber.

23. The apparatus according to claim 22, characterized in that the workstations are arranged in a line.

24. The apparatus according to claim 22 or 23, characterized in that the manipulating device has a horizontally movable carrier connected to the conveyor belt of the conveying device, and the carrier has at least one clamping arm which is vertically movable relative to the carrier.

25. The apparatus according to claim 22 or 23, characterized in that the apparatus includes an input / output station for assembling at least one transport receptacle to the apparatus, and / or a plurality of workstations include at least one deposition station and / or at least one cleaning station and / or at least one drying station.

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