Flow deflector and semiconductor refrigeration device

Abstract

The utility model relates to the technical field of semiconductor refrigeration, and particularly discloses a flow deflector and a semiconductor refrigeration device. The flow deflector comprises a flow deflector main body; a first area, a second area and a third area are arranged on the flow deflector main body; the first area is used for welding grains; the third area is used for welding gold wires; the first region and the third region are electrically connected through the second region; the cross-sectional area of the second area is smaller than that of the first area; the cross-sectional area of the second area is smaller than that of the third area. According to the scheme, the second area with the small cross section area is arranged, the heat conduction rate between the third area and the first area can be decreased, and therefore the melting rate of tin liquid at the bottoms of crystal grains on the first area is decreased, and the flowing speed of the tin liquid along the second area is decreased in the process that gold wires are welded to the third area; the possibility that the third area on the flow deflector is polluted by tin liquid is reduced, and the problem that the gold wire welding area is prone to being polluted by tin liquid climbing during gold wire welding is effectively solved.

Description

Technical Field

[0001] This application relates to the technical field of semiconductor refrigeration, and particularly to a flow guide piece and a semiconductor refrigeration device. Background Art

[0002] Currently, in the TO package in the fields of optical communication and infrared, a micro thermoelectric cooler (Micro TEC) is commonly used to cool the chip. When the Micro TEC is connected to the package, wire bonding is required. Specifically, high-temperature solder paste is used to weld the gold wire to the flow guide piece, so that the gold wire is electrically connected to the crystal grains on the flow guide piece. During the welding process, the tin liquid at the bottom of the crystal grain is easily melted by high temperature and then infiltrates and climbs along the flow guide piece, resulting in the contamination of the area where the gold wire is welded on the flow guide piece, which is not conducive to the welding of the gold wire.

[0003] In practical applications, some products use an ink solder mask layer to block the tin liquid. However, when using high-temperature solder paste for welding, the temperature of the common reflow soldering process in current terminals is generally 280 - 350 degrees. Generally, the solder mask layer cannot withstand high temperatures above 300 °C, resulting in conditions such as bulging and cracking of the solder mask layer, and it cannot effectively prevent the tin liquid from climbing and contaminating the gold wire welding area. Summary of the Utility Model

[0004] In view of this, the purpose of this application is to provide a flow guide piece and a semiconductor refrigeration device, which are used to solve the problem that the area where the gold wire is welded is easily contaminated by the climbing of tin liquid during the welding of the gold wire.

[0005] To achieve the above technical purpose, the first aspect of this application provides a flow guide piece, including: a flow guide piece body;

[0006] A first area, a second area, and a third area are provided on the flow guide piece body;

[0007] The first area is used for welding crystal grains;

[0008] The third area is used for welding gold wires;

[0009] The first area and the third area are electrically connected through the second area;

[0010] The cross-sectional area of the second area is smaller than the cross-sectional area of the first area;

[0011] The cross-sectional area of the second area is smaller than the cross-sectional area of the third area.

[0012] Further, the shapes of the first area and the third area are the same.

[0013] Further, both the first area and the third area are rectangular.

[0014] Further, the third region includes: a first area and a second area;

[0015] The first area and the second area are connected to each other to form an L-shaped structure.

[0016] Further, the area of the first area is larger than the area of the second area;

[0017] The first area is used for welding gold wires;

[0018] The second area is connected to the second region.

[0019] Further, the second region is linear.

[0020] Further, the second region is straight.

[0021] Further, the second region is arc-shaped, S-shaped linear or zigzag-shaped.

[0022] Further, a solder mask or a plurality of grooves are provided on the second region.

[0023] The second aspect of the present application provides a semiconductor refrigeration device, including: a cold-end ceramic substrate, a hot-end ceramic substrate, a plurality of grains, and two flow guiding sheets according to any one of the above;

[0024] Both ends of the plurality of grains are respectively welded to the hot-end ceramic substrate and the cold-end ceramic substrate;

[0025] The two flow guiding sheets are arranged at intervals on the cold-end ceramic substrate or the hot-end ceramic substrate.

[0026] From the above technical solutions, it can be seen that the present application provides a flow guiding sheet and a semiconductor refrigeration device; the flow guiding sheet includes: a flow guiding sheet body; a first region, a second region and a third region are provided on the flow guiding sheet body; the first region is used for welding grains; the third region is used for welding gold wires; the first region and the third region are electrically connected through the second region; the cross-sectional area of the second region is smaller than the cross-sectional area of the first region; the cross-sectional area of the second region is smaller than the cross-sectional area of the third region.

[0027] In this solution, by setting the second region with a smaller cross-sectional area, the heat conduction rate between the third region and the first region can be slowed down, so that during the process of welding the gold wire to the third region, the melting rate of the tin liquid at the bottom of the grain on the first region is slowed down, and the flow rate of the tin liquid along the second region is slowed down, reducing the possibility of the third region on the flow guiding sheet being contaminated by the tin liquid, and effectively solving the problem that the gold wire welding area is easily contaminated by the climbing of the tin liquid during gold wire welding. Description of the Drawings

[0028] To more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0029] Figure 1 Front view of the overall structure of a semiconductor refrigeration device provided by an embodiment of the present application;

[0030] Figure 2 Side view of the overall structure of a semiconductor refrigeration device provided by an embodiment of the present application;

[0031] Figure 3 Front view of the hot-end ceramic substrate of a semiconductor refrigeration device provided by an embodiment of the present application;

[0032] Figure 4 Schematic diagram of a flow guide piece provided by an embodiment of the present application;

[0033] Figure 5 Schematic diagram of a flow guide piece provided by another embodiment of the present application;

[0034] Figure 6 Partial possible structure arrangement diagram of the second region in a flow guide piece provided by an embodiment of the present application;

[0035] Figure 7 Partial possible structure arrangement diagram of the second region in a flow guide piece provided by another embodiment of the present application;

[0036] In the figure: 10, cold-end ceramic substrate; 20, hot-end ceramic substrate; 30, crystal grains; 100, flow guide piece body; 110, first region; 120, second region; 130, third region; 131, first sub-region; 132, second sub-region. Detailed implementation manners

[0037] The following will clearly and completely describe the technical solutions of the embodiments of the present application in conjunction with the drawings. Obviously, the described embodiments are part of the embodiments of the present application, rather than all of them. Based on the embodiments in this specification of the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope protected by the present application.

[0038] In the description of the embodiments of the present application, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the embodiments of the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to the embodiments of the present application. In addition, the terms "first", "second", "third" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0039] In the description of the embodiments of the present application, it should be noted that unless otherwise clearly specified and limited, the terms "installation", "connection", "connection" should be understood in a broad sense. For example, it can be a fixed connection, a replaceable connection, or an integral connection. It can be a mechanical connection or an electrical connection. It can be directly connected or indirectly connected through an intermediate medium. It can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments of the present application can be understood according to specific situations.

[0040] Please refer to Figures 1 to 5 , in the first aspect of the embodiments of the present application, a flow guide piece is provided, including: a flow guide piece main body 100. A first area 110, a second area 120, and a third area 130 are provided on the flow guide piece main body 100; the first area 110 is used for welding the crystal grains 30; the third area 130 is used for welding the gold wires; the first area 110 and the third area 130 are electrically connected through the second area 120; the cross-sectional area of the second area 120 is smaller than the cross-sectional area of the first area 110; the cross-sectional area of the second area 120 is smaller than the cross-sectional area of the third area 130.

[0041] In practical applications, a plurality of crystal grain welding areas are provided on the hot-end ceramic substrate 20; generally, a plurality of crystal grains 30 are first welded on the crystal grain welding areas of the hot-end ceramic substrate 20. The flow guide piece main body 100 is arranged on the hot-end ceramic substrate 20, and one crystal grain 30 is welded on the first area 110.

[0042] During the process of welding the gold wire to the third area 130, the second area 120 with a smaller cross-sectional area can slow down the heat conduction rate from the third area 130 to the first area 110, thereby slowing down the melting rate of the solder at the bottom of the crystal grain on the first area 110; at the same time, after the solder at the bottom of the crystal grain on the first area 110 melts, the solder will flow along the second area 120 to the third area 130, and the second area 120 can slow down the flow rate of the solder, thereby reducing the possibility of the third area 130 being contaminated by the solder.

[0043] As an implementation manner, please refer to Figure 5, the shapes of the first region 110 and the third region 130 are the same.

[0044] Specifically, the first region 110, the second region 120, and the third region 130 can form a strip shape. Among them, the first region 110 and the third region 130 can both be rectangles.

[0045] In this embodiment, the consistent structures of the first region 110 and the third region 130 facilitate the installation of the deflector body 100 on the hot-end ceramic substrate 20. That is, the installation positions of the first region 110 and the third region 130 can be exchanged. Specifically, one of them is connected to the crystal grain 30, and the other is connected to the gold wire.

[0046] In another embodiment, please refer to Figure 4 , the third region 130 includes: a first area 131 and a second area 132; the first area 131 and the second area 132 are connected to each other to form an L-shaped structure. That is, the third region 130 is a right-angled special shape.

[0047] More specifically, the area of the first area 131 is larger than the area of the second area 132; the first area 131 is used for welding the gold wire; the second area 132 is connected to the second region 120.

[0048] In application, the second region 120 is linear, so that the second region 120 can electrically connect the first region 110 and the third region 130, and at the same time has a smaller cross-sectional area.

[0049] Please refer to Figure 6 And Figure 7 , the second region 120 is straight, which is convenient for manufacturing. The second region 120 can also be arc-shaped, S-shaped linear or zigzag-shaped. And the second region 120 can be connected to the end corner position of the first region 110 or the middle of the first region 110, specifically determined according to the arrangement position of the crystal grains 30 on the hot-end ceramic substrate 20 in actual application.

[0050] In one embodiment, please refer to Figure 5 , a solder mask or a plurality of grooves 121 are provided on the second region 120.

[0051] The solder mask and the grooves 121 can further slow down the flow rate of the tin liquid, and at the same time do not affect the electrical connection effect between the first region 110 and the third region 130.

[0052] Please refer to Figures 1 to 3, the second aspect of the present application provides a semiconductor refrigeration device, including: a cold-end ceramic substrate 10, a hot-end ceramic substrate 20, a plurality of chips 30, and two flow guiding sheets as described in any one of the above; both ends of the plurality of chips 30 are respectively welded to the hot-end ceramic substrate 20 and the cold-end ceramic substrate 10; the two flow guiding sheets are arranged at intervals on the cold-end ceramic substrate 10 or the hot-end ceramic substrate 20.

[0053] The semiconductor refrigeration device provided by this embodiment can reduce the material and labor costs of the solder mask, thereby reducing the manufacturing cost of the flow guiding sheet. At the same time, it reduces the risk of the welding area of the gold wire being contaminated by tin liquid during the welding of the TEC product, effectively avoiding the risks of the solder mask bulging, embrittling, falling off and releasing gas at high temperature at the client side, resulting in chip failure and affecting the product life.

[0054] The above are the preferred embodiments of the present application and are not used to limit the present invention. Although the present application has been described in detail with reference to the examples, for those skilled in the art, they can still modify the technical solutions recorded in the foregoing examples, or perform equivalent replacements for some of the technical features. However, any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present application shall be included within the protection scope of the present application.

Claims

1. A flow deflector, characterized in that, Comprising: The flow guiding piece body (100); A first region (110), a second region (120) and a third region (130) are provided on the flow guiding piece body (100); The first region (110) is used for welding the crystal grains (30); The third region (130) is used for welding the gold wires; The first region (110) and the third region (130) are electrically connected through the second region (120); The cross-sectional area of the second region (120) is smaller than the cross-sectional area of the first region (110); The cross-sectional area of the second region (120) is smaller than the cross-sectional area of the third region (130).

2. The flow guiding vane according to claim 1, wherein, The first region (110) and the third region (130) have the same shape.

3. The flow guide vane according to claim 2, wherein Both the first region (110) and the third region (130) are rectangular.

4. The flow guiding vane according to claim 1, wherein The third region (130) comprises: a first area (131) and a second area (132); The first area (131) and the second area (132) are connected to each other to form an L-shaped structure.

5. The flow guide vane according to claim 4, wherein, The area of the first area (131) is larger than the area of the second area (132); The first area (131) is used for welding the gold wires; The second area (132) is connected to the second region (120).

6. The flow guide vane according to any one of claims 1 to 5, characterized in that, The second region (120) is linear.

7. The flow guide vane according to claim 6, characterized in that The second region (120) is straight.

8. The flow guide vane according to claim 6, characterized in that, The second region (120) is arc-shaped, S-shaped linear or zigzag-shaped.

9. The flow guide vane according to claim 1, wherein A solder mask or a plurality of grooves (121) are provided on the second region (120).

10. A semiconductor refrigeration device, characterized in that, Comprising: A cold-end ceramic substrate (10), a hot-end ceramic substrate (20), a plurality of crystal grains (30) and two flow guiding pieces according to any one of claims 1 to 9; Both ends of the plurality of crystal grains (30) are welded to the hot-end ceramic substrate (20) and the cold-end ceramic substrate (10) respectively; The two flow guiding pieces are arranged at intervals on the cold-end ceramic substrate (10) or the hot-end ceramic substrate (20).

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