Single crystal furnace heater

Abstract

The utility model relates to the technical field of single crystal furnace heaters, in particular to a single crystal furnace heater. The single crystal furnace comprises a single crystal furnace body, and a support rod is mounted at the bottom end in the single crystal furnace body; the crucible is located on the surface of the upper end of the supporting rod; the silicon liquid is positioned on the inner surface of the crucible; the guide cylinder is positioned at the top end of the inner wall of the single crystal furnace body; the cold water screen is positioned on the surface of the inner wall of the guide cylinder; and the heater body is positioned at the bottom end of the inner wall of the single crystal furnace body. The problems that in the prior art, due to the fact that a heater is composed of an upper main heater and a bottom heater, the temperature of silicon liquid on the upper portion and the bottom of a crucible is high, the middle temperature is relatively low, the longitudinal temperature gradient of the silicon liquid is increased, heat convection is enhanced, and oxygen content is increased in the growth process of a single crystal silicon rod; and the material melting efficiency of the single crystal furnace is influenced.

Description

Technical Field

[0001] The present application relates to the technical field of single crystal furnace heaters, and in particular to single crystal furnace heaters. Background Art

[0002] During the entire growth process of silicon single crystals, the thermal field in the single crystal furnace has a great influence on the quality of the crystal rod, the growth rate and the yield rate. The main function of the heater is to provide heat for the thermal field of the single crystal furnace, so that the initial solid raw materials are melted into liquid and the temperature gradient required for single crystal growth is ensured, thereby maintaining the normal growth of the single crystal and ensuring the single crystal yield. It is more common during the heating operation of the single crystal furnace.

[0003] The prior art, such as the utility model with announcement number CN219508067U, specifically discloses a single crystal furnace thermal field heater, including a heater body, a first heater foot plate, and a second heater foot plate. The heater body also includes a heater upper portion and a heater heating element. The heater body is cylindrical and hollow inside. The opening width of the heater upper portion is wider than the vertical width and is uniformly provided with V-shaped grooves. The lower portion of the outer wall of the heater body is located between the V-shaped grooves and is uniformly provided with cutout grooves. The heater heating elements are provided on the two end walls of the heater body that are away from each other. The bottoms of the two heater heating elements are fixedly connected with connecting protrusions. This device designs the cross-sectional area of the upper portion of the heater to be smaller than the structure of the lower portion of the heater, thereby making the resistance of the upper portion of the heater relatively large, further increasing the power of the upper portion of the heater, thereby increasing the temperature of the upper portion of the heater, reducing the oxygen content in the gap between the single crystal head, improving the quality of the silicon single crystal, and improving the crystallization rate.

[0004] During the heating operation of the single crystal furnace, the heater design in the existing technology adopts an upper main heater and a bottom heater. This design causes the silicon liquid temperature at the top and bottom of the crucible to be high, while the middle temperature is relatively low. In addition, the longitudinal temperature gradient of the silicon liquid increases, and the heat convection is enhanced, resulting in an increase in the oxygen content during the growth process of the single crystal silicon rod, which in turn leads to problems affecting the efficiency of the single crystal furnace. Utility Model Content

[0005] One of the technical problems to be solved by this application is that the heater design in the prior art is composed of an upper main heater and a bottom heater. This design results in high silicon liquid temperatures at the top and bottom of the crucible, while the middle temperature is relatively low. In addition, the longitudinal temperature gradient of the silicon liquid increases, and the heat convection is enhanced, resulting in an increase in the oxygen content during the growth process of the single crystal silicon rod, which in turn leads to problems affecting the efficiency of the single crystal furnace.

[0006] To solve the above technical problems, the present invention provides a single crystal furnace heater, comprising: a single crystal furnace body, wherein a support rod is installed at the bottom end of the single crystal furnace body;

[0007] a crucible, the crucible being located on the upper end surface of the supporting rod;

[0008] Silicon liquid, the silicon liquid being located on the inner surface of the crucible;

[0009] A guide tube, which is located at the top of the inner wall of the single crystal furnace body;

[0010] A cold water screen, the cold water screen being located on the inner wall surface of the guide tube; and

[0011] A heater body, the heater body being located at the bottom end of the inner wall of the single crystal furnace body;

[0012] Among them, the heater body includes a top plate and a bottom plate, the top plate is located on the upper end surface of the bottom plate, one end of the top plate and one end of the bottom plate are fixedly connected to the heater body, the cross-section of the bottom plate is arc-shaped, and the cross-sectional size of the bottom plate is adapted to the size of the bottom end of the inner wall of the single crystal furnace body.

[0013] In some embodiments, the bottom arc surface of the crucible is fixedly connected to a crucible support, and the upper arc surface of the crucible is fixedly connected to a crucible side.

[0014] In some embodiments, the arc surface of the bottom end of the supporting rod is rotatably connected to the bottom inner wall of the single crystal furnace body, and the upper end of the supporting rod is fixedly connected to the bottom end of the crucible by means of a crucible support.

[0015] In some embodiments, a plurality of connecting grooves are formed on the surface of the heater body, and the connecting grooves are evenly distributed on the surface of the heater body, and the cross-section of the connecting grooves is "S"-shaped.

[0016] In some embodiments, the arc surface of the heater body is provided with four evenly distributed inlay grooves, and the cross-sectional dimensions of the inlay grooves are adapted to the cross-sectional dimensions of the guide tube.

[0017] In some embodiments, the surface thickness of the middle section of the heater body is greater than the thickness of the top plate and the bottom plate at both ends of the heater body.

[0018] In some embodiments, the heater body is made of a nickel-chromium alloy that is resistant to high temperatures and has good electrical conductivity.

[0019] Through the above technical solution, the single crystal furnace heater provided by the present application has a heater body that is thinned by the top plate and the bottom, so that the heating efficiency is higher. On the one hand, it can improve the efficiency of the single crystal furnace, which is beneficial to increase the daily feed volume of a single furnace and reduce manufacturing costs. On the other hand, it effectively suppresses heat convection and shortens the reaction time between silicon material and crucible, thereby effectively reducing the oxygen content of silicon rods. Through the design and process development of the new heater, the efficiency of the single crystal furnace is improved, and the daily feed volume of the single crystal furnace is increased by more than 5%. At the same time, the oxygen content can be reduced by 0.5ppma. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following is a brief introduction to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0021] Figure 1 Schematic diagram of the three-dimensional structure of the single crystal furnace heater disclosed in the embodiment of the present application;

[0022] Figure 2 Schematic diagram of the structure of the single crystal furnace heater disclosed in the embodiment of the present application;

[0023] Figure 3 1 is a bottom view structural diagram of a single crystal furnace heater disclosed in an embodiment of the present application;

[0024] Figure 4 It is a schematic diagram of the partial structure of the single crystal furnace heater disclosed in the embodiment of this application.

[0025] Description of reference numerals:

[0026] 1. Guide tube; 2. Water cooling screen; 3. Crucible side; 4. Silicon liquid; 5. Crucible support; 6. Support rod; 7. Heater body; 71. Top plate; 72. Bottom plate; 73. Connecting groove; 74. Inlay groove; 8. Crucible; 9. Single crystal furnace body. DETAILED DESCRIPTION

[0027] The following detailed description of the embodiments of the present application is provided in conjunction with the accompanying drawings and examples. The detailed description of the following embodiments and the accompanying drawings are intended to illustrate the principles of the present application, but are not intended to limit the scope of the present application. The present application may be implemented in many different forms and is not limited to the specific embodiments disclosed herein, but rather includes all technical solutions within the scope of the claims.

[0028] The present application provides these embodiments to make this application thorough and complete, and to fully express the scope of this application to those skilled in the art. It should be noted that: unless otherwise specifically stated, the relative arrangement of parts and steps, the composition of materials, numerical expressions and numerical values set forth in these embodiments should be interpreted as merely exemplary, and not as limiting.

[0029] It should be noted that, in the description of this application, unless otherwise specified, "plurality" means greater than or equal to two; the terms "upper," "lower," "left," "right," "inner," "outer," and the like, indicating directions or positional relationships, are intended only to facilitate the description of this application and simplify the description, and do not indicate or imply that the devices or components referred to must have a specific direction, be constructed, or operate in a specific direction. Therefore, they should not be construed as limitations on this application. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0030] In addition, the terms "first," "second," and similar terms used in this application do not indicate any order, quantity, or importance, but are simply used to distinguish different parts. "Perpendicular" does not mean perpendicular in the strict sense, but rather means that the positions are within the tolerance range. "Parallel" does not mean parallel in the strict sense, but rather means that the positions are within the tolerance range. "Include" or "comprising" and similar terms mean that the elements listed before the word include the elements listed after the word, and do not exclude the possibility that other elements may also be included.

[0031] It should also be noted that, in the description of this application, unless otherwise expressly specified or limited, the terms "installed," "connected," and "connected" should be understood in a broad sense. For example, they can be fixedly connected, detachably connected, or integrally connected; they can be directly connected or indirectly connected through an intermediate medium. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to the specific circumstances. When a specific device is described as being located between a first device and a second device, there may or may not be an intermediate device between the specific device and the first device or the second device.

[0032] All terms used in this application have the same meaning as understood by one of ordinary skill in the art to which this application belongs, unless otherwise specifically defined. It should also be understood that terms defined in, for example, common dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology and should not be interpreted in an idealized or highly formal sense, unless explicitly defined as such herein.

[0033] Technologies, methods, and equipment known to ordinary technicians in the relevant art may not be discussed in detail, but where appropriate, the technologies, methods, and equipment should be considered part of the specification.

[0034] Reference Figure 1 As shown, the utility model provides a technical solution: a single crystal furnace heater includes a single crystal furnace body 9, and a support rod 6 is installed at the bottom end of the single crystal furnace body 9;

[0035] Crucible 8, crucible 8 is located on the upper end surface of the supporting rod 6;

[0036] Silicon liquid 4, located on the inner surface of the crucible 8;

[0037] The guide tube 1 is located at the top of the inner wall of the single crystal furnace body 9, and is mainly used to keep the heat field warm and guide the argon flow direction;

[0038] A cold water screen is located on the inner wall of the guide tube 1 and is mainly used to cool the silicon rods, increase the temperature gradient and thus improve the pulling speed; and

[0039] The heater body 7 is located at the bottom end of the inner wall of the single crystal furnace body 9 .

[0040] In the process of operating the entire single crystal furnace body 9, it is necessary to use the heater body 7 to provide a high temperature environment to melt the material and control its crystallization. At the same time, by accurately adjusting the temperature, the heater body 7 can ensure that the material is evenly heated, promote the formation of single crystals, thereby improving the quality and performance of the material, and the effectiveness of the heater body 7 directly affects the rate and quality of crystal growth. In this process, it is necessary to install and match the heater body 7 with the components inside the single crystal furnace body 9. The thickness of the top plate 71 and the bottom plate 72 of the heater body 7 is thinner, and is 10 cm thinner than the middle surface of the heater body 7, which makes the heating efficiency higher. A support rod 6 is installed at the bottom end of the inner wall of the crystal furnace body 9, and the upper end of the support rod 6 is installed and fixed to the crucible support 5, and then the crucible 8 is placed on the upper surface of the crucible support 5, so that the support rod 6 is used to rotate the entire crucible 8, and at the same time, the crucible side 3 on the surface of the crucible 8 is used for support and limitation. When in use, the silicon liquid 4 is poured into the crucible 8, and the heater body 7 is installed on the outside of the bottom end of the crucible 8. The upper end of the single crystal furnace body 9 is located directly above the crucible 8 and a guide tube 1 is installed, which mainly insulates the heat field and guides the argon gas flow. The cold water screen is located on the inner wall surface of the guide tube 1, and its main function is to provide cooling for the growth of silicon rods, increase the temperature gradient and thus increase the pulling speed.

[0041] Reference Figure 2 、 Figure 3 ,and Figure 4As shown, in this embodiment: the heater body 7 includes a top plate 71 and a bottom plate 72. The heater body 7 provides heat for the single crystal furnace. At the same time, the heater body 7 needs to measure a bottom safety distance of 25-30 mm. The top plate 71 is located on the upper end surface of the bottom plate 72. One end of the top plate 71 and one end of the bottom plate 72 are fixedly connected to the heater body 7. The thickness of the top plate 71 and the bottom plate 72 of the heater body 7 is thinner, and the design is 10 cm thinner than the middle surface of the heater body 7, which makes the heating efficiency higher, suppresses heat convection, and significantly shortens the reaction time of the silicon material and the crucible 8, thereby reducing the oxygen content of the silicon rod. The cross-section of 72 is arc-shaped, and the cross-sectional size of the bottom plate 72 is adapted to the size of the bottom end of the inner wall of the single crystal furnace body 9. The bottom arc surface of the crucible 8 is fixedly connected to the crucible support 5, which supports the crucible side 3, the crucible 8 and the silicon liquid 4. The upper arc surface of the crucible 8 is fixedly connected to the crucible side 3, which supports the crucible 8. The bottom arc surface of the supporting rod 6 is rotatably connected to the bottom inner wall of the single crystal furnace body 9. The upper end of the supporting rod 6 is fixedly connected to the bottom end of the crucible 8 with the help of the crucible support 5, and the CCD interface is controlled and descends to a distance of 100 mm from the upper edge of the main foot plate to the upper edge of the pot support to adjust the lower line of the crucible 8. During the operation of the single crystal furnace, it supports the thermal field and drives the crucible 8 to rotate.

[0042] The surface of the heater body 7 is provided with a plurality of connecting grooves 73, and the connecting grooves 73 are evenly distributed on the surface of the heater body 7. The connecting grooves 73 can be used to increase the space of the heater body 7, and the heating operation is convenient and effective. The cross-section of the connecting groove 73 is "S"-shaped, and the arc surface of the heater body 7 is provided with four evenly distributed inlay grooves 74. The cross-sectional dimensions of the inlay grooves 74 are adapted to the cross-sectional dimensions of the guide tube 1. With the help of the inlay grooves 74, installation and positioning can be conveniently performed. The surface thickness of the middle section of the heater body 7 is greater than the thickness of the top plate 71 and the bottom plate 72 at both ends of the heater body 7, which makes the heating efficiency of the heater higher, suppresses heat convection, and significantly shortens the reaction time of the silicon material and the crucible 8, thereby reducing the oxygen content of the silicon rod. The heater body 7 is a nickel-chromium alloy that is resistant to high temperatures and has good electrical conductivity.

[0043] During the installation of the heater body 7 and some parts inside the entire single crystal furnace body 9, first ensure that the furnace body of the single crystal furnace body 9 is of high purity and sanitation and prepare various tools and materials. Then install the quartz sheath and graphite electrode on the bottom inner wall of the single crystal furnace body 9, and then install the insulation and protective disk pressing piece on the bottom inner wall surface of the single crystal furnace body 9. At the same time, install the lower insulation barrel on the inner wall of the single crystal furnace body 9, and rotate the support rod 6 to connect it to the bottom surface of the single crystal furnace body 9 with the help of bolts and nuts. At the same time, tighten the heater body 7 to fix the position, measure the bottom safety distance of 25-30mm, and then install the pot support, control the CCD interface, and descend to the distance from the upper edge of the main footing plate to the upper edge of the pot support. The distance between the upper edge of the heater and the lower edge of the upper insulation support ring is 35-40mm, and the centering distance between the heater and the middle insulation temperature is measured. At the same time, the crucible support 5 and the support rod 6 are installed and fixed, and then the crucible 8 and the crucible support 5 are docked and limited, and then the crucible side 3 is installed on the upper end arc surface of the crucible 8, and finally the upper insulation tube is installed on the inner upper end of the single crystal furnace body 9 to ensure that the center lines of the upper, middle and lower insulation tubes are consistent. At this time, the entire single crystal furnace body 9 is installed and fixed as an integrated unit.

[0044] So far, the various embodiments of the present application have been described in detail. To avoid obscuring the concept of the present application, some details well known in the art have not been described. Based on the above description, those skilled in the art can fully understand how to implement the technical solutions disclosed herein.

[0045] Although some specific embodiments of the present application have been described in detail through examples, those skilled in the art will understand that the above examples are for illustrative purposes only and are not intended to limit the scope of the present application. Those skilled in the art will understand that the above embodiments may be modified or some technical features may be replaced by equivalents without departing from the scope and spirit of the present application. In particular, as long as there are no structural conflicts, the various technical features mentioned in the various embodiments may be combined in any manner.

Claims

1. Single crystal furnace heater, characterized in that, include: A single crystal furnace body (9), wherein a supporting rod (6) is installed at the inner bottom end of the single crystal furnace body (9); A crucible (8), wherein the crucible (8) is located on the upper end surface of the supporting rod (6); Silicon liquid (4), the silicon liquid (4) is located on the inner surface of the crucible (8); A guide tube (1), the guide tube (1) being located at the top end of the inner wall of the single crystal furnace body (9); A cold water screen, the cold water screen being located on the inner wall surface of the guide tube (1); and A heater body (7), the heater body (7) being located at the bottom end of the inner wall of the single crystal furnace body (9); The heater body (7) includes a top plate (71) and a bottom plate (72), wherein the top plate (71) is located on the upper end surface of the bottom plate (72), one end of the top plate (71) and one end of the bottom plate (72) are fixedly connected to the heater body (7), the cross section of the bottom plate (72) is arc-shaped, and the cross-sectional size of the bottom plate (72) is adapted to the size of the bottom end of the inner wall of the single crystal furnace body (9).

2. The single crystal furnace heater according to claim 1, characterized in that: The bottom arc surface of the crucible (8) is fixedly connected to a crucible support (5), and the upper arc surface of the crucible (8) is fixedly connected to a crucible side (3).

3. The single crystal furnace heater according to claim 1, characterized in that: The arc surface at the bottom end of the support rod (6) is rotatably connected to the inner wall of the bottom end of the single crystal furnace body (9), and the upper end of the support rod (6) is fixedly connected to the bottom end of the crucible (8) by means of the crucible support (5).

4. The single crystal furnace heater according to claim 1, characterized in that The surface of the heater body (7) is provided with a plurality of connecting grooves (73), the plurality of connecting grooves (73) are evenly distributed on the surface of the heater body (7), and the cross section of the connecting grooves (73) is in an "S" shape.

5. The single crystal furnace heater according to claim 1, characterized in that: The arc surface of the heater body (7) is provided with four evenly distributed inlay grooves (74), and the cross-sectional dimensions of the inlay grooves (74) are adapted to the cross-sectional dimensions of the guide tube (1).

6. The single crystal furnace heater according to claim 1, characterized in that: The surface thickness of the middle section of the heater body (7) is greater than the thickness of the top plate (71) and the bottom plate (72) at both ends of the heater body (7).

7. The single crystal furnace heater according to claim 1, characterized in that: The heater body (7) is a nickel-chromium alloy that is resistant to high temperatures and has good electrical conductivity.

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