Charge neutralization device of semiconductor process equipment

Abstract

The utility model discloses a charge neutralization device of semiconductor process equipment, which comprises a reaction chamber, and is characterized in that the side wall of the reaction chamber is provided with a transfer channel, and the transfer channel is used for transferring in or out a wafer; the ion generation equipment is arranged on the inner side wall of the transmission channel and is used for providing ions for neutralizing charges; and in the working state, the ion generation equipment ionizes the gas to generate anions and cations, and charges are neutralized in the wafer transfer and reaction chamber cleaning process. According to the invention, charges generated in the wafer processing process can be neutralized, and the problem that the quality of the wafer is damaged due to residual charges on the surface of the wafer in the wafer deposition process and after deposition can be reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a charge neutralization device for semiconductor process equipment. Background Art

[0002] During wafer processing, especially for chemical vapor deposition, when plasma is involved in the deposition process, electrostatic force will exist at the upper and lower plates. When the deposition is completed and the electric field disappears, if the pump force is not sufficient to overcome this electrostatic force, electrostatic force will continue to exist on the wafer surface, attracting foreign particles during transportation and storage, and even posing the risk of electrostatic discharge.

[0003] Therefore, it is necessary to provide a new charge neutralization device for semiconductor process equipment to solve the above problems existing in the prior art. Summary of the Invention

[0004] The purpose of the present invention is to provide a charge neutralization device for semiconductor process equipment, which is used to neutralize the charges generated during wafer processing, thereby reducing the problem of residual charges on the wafer surface causing damage to wafer quality during and after wafer deposition.

[0005] To achieve the above object, the technical solution of the present invention is as follows:

[0006] A charge neutralization device for semiconductor process equipment,

[0007] The reaction chamber comprises a side wall of which is provided with a transfer channel for transferring wafers in or out;

[0008] an ion generating device, disposed on the inner side wall of the transmission channel, for providing ions for neutralizing the charge;

[0009] In the working state, the ion generating device ionizes the gas to generate anions and cations, and performs charge neutralization during the reactant extraction process, wafer transfer, and reaction chamber cleaning process after the wafer processing reaction is completed.

[0010] By adopting the above technical solution, an ion generating device is installed inside the transmission channel. During the reactant extraction process, wafer transfer, and reaction chamber cleaning process after the wafer processing reaction, the ion generating device generates anions and cations to neutralize the charges generated during the wafer processing process and complete the charge release, thereby reducing the problem of residual charge on the wafer surface during and after wafer deposition, which causes damage to the wafer quality.

[0011] Optionally, the ion generating device has an ionization chamber, in which a discharge electrode is provided for ionizing the gas; a gas outlet is provided on a side wall of the ionization chamber, and the gas outlet faces the interior of the reaction chamber.

[0012] By adopting the above technical solution, the gas is ionized in the ionization chamber. During the ionization process, the discharge electrode is energized. After the ionization is completed, the gas carrying anions and cations enters the reaction chamber through the outlet, facilitating the charge neutralization process.

[0013] Optionally, there is a certain angle between the ion generating device and the inner side wall of the transmission channel.

[0014] By adopting the above technical solution, a certain angle is formed between the ion generating device and the inner wall of the transmission channel. During use, the angle of the ion generating device can be adjusted according to different usage conditions or requirements to adapt to different working conditions.

[0015] Optionally, a mounting groove is provided at the top of the transmission channel, the mounting groove is communicated with the transmission channel, the ion generating device is arranged in the mounting groove, and the air outlet extends into the transmission channel.

[0016] By adopting the above technical solution, the ion generating device is arranged in the installation groove, and the gas outlet of the ion generating device extends into the transmission channel. This arrangement not only ensures that the gas ionized by the ion generating device can enter the transmission channel, but also ensures that it will not affect the wafer transmission process, thereby reducing interference with the wafer processing process.

[0017] Optionally, the gas ionized by the ion generating device is an inert gas or O2, N2.

[0018] By adopting the above technical solution, the chemical properties of the inert gas are relatively stable and it is not easy to chemically react with the materials in the reaction chamber or surface adsorbents, thereby avoiding the introduction of new impurities.

[0019] Optionally, the inert gas is at least one of AR and He.

[0020] By adopting the above technical solution, the use of inert gas can avoid unnecessary chemical reactions with the materials in the reaction chamber, thereby ensuring the quality of wafer processing.

[0021] Optionally, the top of the reaction chamber has an opening, so that the interior of the reaction chamber is in communication with the outside; and a cover is rotatably provided on the side wall of the reaction chamber, and the cover is used to close the opening.

[0022] By adopting the above technical solution, the top of the reaction chamber is provided with an opening, which facilitates the installation of components in the reaction chamber and the maintenance of components in the reaction chamber. The cover is used to close the opening, thereby reducing the possibility of impurities in the external environment entering the interior of the reaction chamber through the opening.

[0023] Optionally, during the reactant extraction process after the wafer processing reaction, the gas flow rate range of the ion generating equipment is 50~100sccm; during the wafer transfer process and the cleaning process of the reaction chamber, the gas flow rate range of the ion generating equipment is 100~200sccm.

[0024] By adopting the above technical solution, during the process of extracting the reactants after the wafer processing reaction, the gas flow rate range is 50~100sccm. While ensuring the process effect, the lower gas flow rate can reduce the consumption of inert gas and reduce costs. At the same time, the appropriate gas flow rate helps to form a stable sheath layer, which is convenient for neutralizing the surface charge and will not cause excessive impact on the sample; during the wafer transfer process and the cleaning process of the reaction chamber, the gas flow rate range is 100~200sccm. The higher gas flow rate can more effectively blow the wafer surface, which helps to clean up the residual charge and contaminants. At the same time, the higher gas flow rate can enhance the ion flow, thereby more effectively neutralizing the charge on the wafer surface.

[0025] A semiconductor process equipment comprising a heater, a charge neutralization device;

[0026] The heater is arranged inside the reaction chamber, a plasma gas channel is arranged at the top of the reaction chamber, and a by-product channel is arranged at the bottom of the reaction chamber;

[0027] During operation, the wafer enters the interior of the reaction chamber through the transfer channel and is transferred to the heater. Plasma gas enters the interior of the reaction chamber through the plasma gas channel for deposition, and the formed by-products are discharged through the by-product channel.

[0028] By adopting the above technical solution, during the wafer processing process, the heater is used to control the temperature of the wafer so that it reaches the specific temperature required by the process; by precisely controlling the temperature of the wafer, the heater helps to improve the structure and performance of the deposited film.

[0029] Optionally, a blocking portion is further included, wherein the blocking portion is fixedly disposed inside the reaction chamber and disposed between the plasma gas channel and the heater.

[0030] By adopting the above technical solution, the barrier portion is arranged between the plasma gas channel and the heater, which can effectively prevent the plasma gas from blowing directly onto the wafer surface and the heater surface, reducing the direct exposure of the wafer or heater to high temperature or reactive gases, thereby reducing the risk of damage to the wafer or heater; in addition, the flow and distribution of the plasma can be more accurately controlled, thereby improving the uniformity of the deposited film on the wafer.

[0031] The beneficial effects of the charge neutralization device for semiconductor process equipment provided by the present invention include at least:

[0032] 1. An ion generator is installed inside the transmission channel. During the process of extracting reactants after the wafer processing reaction, transferring wafers, and cleaning the reaction chamber, the ion generator generates anions and cations to neutralize the charges generated during the wafer processing and complete the charge release.

[0033] 2. The gas ionized by the ion generator is an inert gas. The chemical properties of inert gas are relatively stable and it is not easy to react chemically with the materials in the reaction chamber or surface adsorbents, thereby avoiding the introduction of new impurities. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 This is a schematic diagram of the main structure of a charge neutralization device for semiconductor process equipment according to an embodiment of the present invention;

[0035] Figure 2 A cross-sectional view of the main structure of a charge neutralization device of a semiconductor process equipment according to an embodiment of the present invention, and a schematic diagram of the position of an ion generating device in a transmission channel;

[0036] Figure 3 This is a simplified structural diagram of an ion generating device of a charge neutralization apparatus of a semiconductor process equipment according to an embodiment of the present invention.

[0037] Reference numerals:

[0038] 100. Reaction chamber; 110. Transfer channel; 111. Mounting groove; 120. Opening; 130. Cover; 200. Ion generating device; 210. Ionization chamber; 220. Discharge electrode; 230. Gas outlet; 300. Heater; 400. Plasma gas channel; 500. By-product channel; 600. Barrier. DETAILED DESCRIPTION

[0039] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be the common meanings understood by people with ordinary skills in the field to which the invention belongs. The words "including" and similar words used in this article mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0040] The specific embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.

[0041] Reference Figure 1 、 Figure 2 and Figure 3 . An embodiment of the present invention provides a charge neutralization device for semiconductor process equipment. During wafer processing, especially for chemical vapor deposition, when plasma is involved in the deposition process, electrostatic force will exist at the positions of the upper and lower plates. When the deposition is completed and the electric field disappears, if the suction force of the pump is not enough to overcome this electrostatic force, electrostatic force will always exist on the surface of the wafer, attracting foreign particles during transportation and storage, and even posing a risk of electrostatic discharge. The charge neutralization device is used to neutralize this electrostatic force. The charge neutralization device includes a reaction chamber 100. The wafer is processed in the reaction chamber 100. A transfer channel 110 is provided on the side wall of the reaction chamber 100. The transfer channel 110 connects the inside and outside of the reaction chamber 100. During the wafer processing process, the wafer is transferred from the outside of the reaction chamber 100 to the inside of the reaction chamber 100, or the wafer is transferred from the inside of the reaction chamber 100 to the outside of the reaction chamber 100 through the transfer channel 110. At the same time, a valve is provided inside the transfer channel 110. After the wafer is transferred to the inside of the reaction chamber 100, the valve is closed to facilitate the wafer processing process. At the same time, after the valve is closed, the inside of the reaction chamber 100 can be evacuated to make the inside of the reaction chamber 100 a vacuum setting. At this time, the valve can also play a sealing role to facilitate maintaining the vacuum state inside the reaction chamber 100.

[0042] Reference Figure 1 、 Figure 2 and Figure 3, an ion generating device 200 is provided on the inner wall of the transfer channel 110, and the ion generating device 200 is used to ionize the gas to form anions and cations, thereby neutralizing the charge in the reaction chamber 100 and reducing the influence of the charge on the wafer, that is, the ion generating device 200 is used to provide ions used to neutralize electrons, and can perform charge neutralization during the reactant extraction process, wafer transfer, and reaction chamber cleaning process after the reaction process is completed; in the working state, the ion generating device 200 ionizes the gas to generate anions and cations, and performs charge neutralization during wafer transfer and reaction chamber 100 cleaning process. It is worth noting that in this embodiment, the ion generating device 200 only participates in the cleaning process of the reaction chamber 100 and the wafer transfer process. Such a setting can effectively reduce the risk of charge release in subsequent processes such as transmission and storage; the ion generating device 200 has an ionization chamber 210, and a discharge electrode 220 is provided in the ionization chamber 210. The discharge electrode 22 0 is used to electromagnetize the gas. The ionization process of the gas mainly takes place in the ionization chamber 210. The shape of the ionization chamber 210 should match the discharge electrode 220. The size is sufficient to accommodate the discharge electrode 220 and allow the gas to flow. The discharge electrode 220 is connected to a power supply. The positive and negative poles of the power supply are usually connected to the discharge electrode 220. When the voltage is high enough, corona discharge occurs between the electrodes, thereby generating ions. A gas outlet 230 is opened on the side wall of the ionization chamber 210. The gas outlet 230 penetrates the ionization chamber 210 along the thickness direction of the ionization chamber 210. The gas carrying anions and cations formed after ionization is discharged from the gas outlet 230. At the same time, the gas outlet 230 is directed to the interior of the reaction chamber 100, which facilitates the gas carrying anions and cations to contact with the charges in the reaction chamber 100, thereby completing the charge neutralization. In this embodiment, the ion generating device 200 uses an ion generator. The ion generator has a simple principle, no by-products, and a weak airflow setting, which does not affect the wafer processing process.

[0043] Reference Figure 1 、 Figure 2 and Figure 3The wafer is horizontally arranged in the reaction chamber 100, and the wafer axis direction is defined as the vertical direction. The upper part of the reaction chamber 100 in the vertical direction is the top, and the lower part of the reaction chamber 100 in the vertical direction is the bottom. In this embodiment, a mounting groove 111 is opened at the top of the transmission channel 110, and the mounting groove 111 is connected to the transmission channel 110. The ion generating device 200 is arranged in the mounting groove 111, and its setting method can be bolt fixing, clamping or embedding. In this embodiment, the ion generating device 200 is embedded in the mounting groove 111, and the gas outlet 230 of the ion generating device 200 extends to the transmission channel 110. That is, the gas carrying anions and cations formed by ionization of the ion generating device 200 can enter the transfer channel 110 through the gas outlet 230, which is convenient for the charge neutralization process. In addition, there is a certain angle between the side wall of the ion generating device 200 and the inner wall of the transfer channel 110. The angle can be 0° or 90°, or an angle between 0° and 90°, such as 45°. As long as the gas outlet 230 of the ion generating device 200 is kept facing the interior of the reaction chamber 100, during the charge neutralization process, the airflow carrying anions and cations in the ion generating device 200 can always be kept in the same direction as the interior of the reaction chamber 100 or the surface of the wafer.

[0044] Reference Figure 1 、 Figure 2 and Figure 3 The gas ionized by the ion generating device 200 is an inert gas or O2, N2, etc., as long as the gas can be dissociated into anions and cations and does not participate in the reaction process of wafer processing. The inert gas is at least one of He, Ne, and Ar. The selection of inert gas can avoid other reactions in the charge neutralization process to the greatest extent, and facilitate the process of removing adsorbents from the wafer surface. In addition, the top of the reaction chamber 100 has an opening 120, and the opening 120 connects the inside and outside of the reaction chamber 100. At the same time, the side wall of the reaction chamber 100 is connected to a cover 130 for closing the opening 120 through a rotating shaft. The cover 130 can be rotated to close the opening 120, thereby facilitating the subsequent wafer processing. The cover 130 is fixed with a sealing strip for enhancing the sealing performance between the cover 130 and the side wall of the reaction chamber 100. The sealing strip can be fixed by bolts, clamping or bonding. In this embodiment, the sealing strip is preferably bonded to the cover 130. In addition, the sealing strip can be made of silicone or rubber, or other materials that can play a sealing role. In this embodiment, the sealing strip is preferably made of rubber. When the cover 130 closes the opening 120, that is, when the cover 130 covers the reaction chamber 100, it can ensure good sealing between the cover 130 and the reaction chamber 100.

[0045] Reference Figure 1 、 Figure 2 and Figure 3 The charge neutralization process occurs during the cleaning of the reaction chamber 100 and the transfer of the wafers. During the extraction of the reactants after the reaction process is completed, the ion generator 200 is turned on, the gas flow rate is set to 50-100 sccm, and the inert gas is limited to the chamber. This can effectively avoid other chemical reactions in the reaction chamber 100, only generate positive / negative ions, neutralize the charge, and cooperate with the air flow of the pump to remove the adsorbents on the surface of the reaction chamber 100 or the wafer surface; during the wafer transfer process and the cleaning process of the reaction chamber 100, especially in the process of transferring the wafer from the inside of the reaction chamber 100 to the outside of the reaction chamber 100, only the gas flow function of the ion generator 200 is turned on, and the gas flow rate range is set to 100 ~200sccm, during the wafer transfer process, it can avoid the residual charged electrons in the previous step. At the same time, since the outlet 230 of the ion generating device 200 is set in the transmission channel 110, the wafer surface can be blown at a close distance during the wafer movement to further clean the residual charge on the wafer surface.

[0046] The embodiment of the present invention further provides a semiconductor process equipment, referring to Figure 1 、 Figure 2 and Figure 3, the semiconductor process equipment is used to process wafers, and the semiconductor process equipment includes a heater 300, a charge neutralization device, and a plasma gas supply device, etc., wherein the heater 300 is arranged at the bottom inner side of the reaction chamber 100, and the wafer stays on the heater 300 after entering the reaction chamber 100 from the transfer channel 110, so as to facilitate subsequent process steps; a plasma gas channel 400 is arranged on the top of the reaction chamber 100. In this embodiment, the plasma gas channel 400 is fixedly arranged on the cover 130 and communicated with the interior of the reaction chamber 100. At the same time, the plasma gas channel 400 is fixed to the plasma gas supply device. During operation, the plasma gas supply device provides plasma gas, and the plasma gas enters the interior of the reaction chamber 100 after passing through the plasma gas channel 400, and participates in wafer heating The process of processing; a by-product channel 500 is fixedly provided at the bottom of the reaction chamber 100, and the by-product channel 500 is communicated with the interior of the reaction chamber 100. During the wafer processing process, the by-products that have not participated in the reaction or have not completely reacted are discharged through the by-product channel 500 to avoid affecting the wafer processing process; in addition, the semiconductor process equipment also includes a barrier part 600. In this embodiment, the barrier part 600 is plate-shaped and is fixedly arranged inside the reaction chamber 100. The fixing method can be adhesive, welding or bolt fixing. In this embodiment, the bolt fixing connection method is preferably used, and the barrier part 600 is arranged between the plasma channel and the heater 300, which can effectively prevent the gas in the plasma gas channel 400 from directly blowing onto the wafer surface, thereby affecting the wafer processing process.

[0047] The implementation principle of the charge neutralization device of a semiconductor process equipment in an embodiment of the present application is as follows: a plasma generating device 200 is installed in the transfer channel 110, and the plasma generating device 200 is started to ionize the gas to produce anions and cations. During the cleaning process of the reaction chamber 100 or the wafer transfer process, the gas carrying anions and cations comes into contact with the charges inside the reaction chamber 100 or the charges on the surface of the wafer, and neutralizes the charges, thereby reducing charge accumulation.

[0048] While the embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations of these embodiments are possible. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the claims. Furthermore, the invention described herein is susceptible to other embodiments and may be practiced or implemented in a variety of ways.

Claims

1. A charge neutralization device for semiconductor process equipment, characterized in that: The invention comprises a reaction chamber (100), wherein a transfer channel (110) is provided on a side wall of the reaction chamber (100), and the transfer channel (110) is used for transferring wafers in or out; an ion generating device (200), arranged on the inner side wall of the transmission channel (110), for providing ions for neutralizing electric charges; In a working state, the ion generating device (200) ionizes the gas to generate anions and cations, and performs charge neutralization during the reactant extraction process, wafer transfer, and cleaning process of the reaction chamber (100) after the wafer processing reaction is completed.

2. The charge neutralization device according to claim 1, characterized in that: The ion generating device (200) has an ionization chamber (210), wherein a discharge electrode (220) is provided in the ionization chamber (210) for ionizing gas; a gas outlet (230) is provided on a side wall of the ionization chamber (210), and the gas outlet (230) faces the interior of the reaction chamber (100).

3. The charge neutralization device according to claim 2, characterized in that: There is a certain angle between the ion generating device (200) and the inner side wall of the transmission channel (110).

4. The charge neutralization device according to claim 3, characterized in that: A mounting groove (111) is provided at the top of the transmission channel (110), the mounting groove (111) is communicated with the transmission channel (110), the ion generating device (200) is arranged in the mounting groove (111), and the air outlet (230) extends into the transmission channel (110).

5. The charge neutralization device according to claim 1, characterized in that: The gas ionized by the ion generating device (200) is an inert gas or O2 or N2.

6. The charge neutralization device according to claim 5, characterized in that: The inert gas is at least one of AR and He.

7. The charge neutralization device according to claim 1, characterized in that: The top of the reaction chamber (100) is provided with an opening (120) so that the inside of the reaction chamber (100) is in communication with the outside; a cover (130) is rotatably provided on the side wall of the reaction chamber (100), and the cover (130) is used to close the opening (120).

8. The charge neutralization device according to claim 1, characterized in that: During the process of extracting reactants after the wafer processing reaction, the gas flow rate of the ion generating device (200) is in the range of 50-100 sccm; during the process of transferring the wafer and cleaning the reaction chamber (100), the gas flow rate of the ion generating device (200) is in the range of 100-200 sccm.

9. A semiconductor process equipment, characterized in that: comprising a heater (300) and a charge neutralization device according to any one of claims 1 to 8; The heater (300) is arranged inside the reaction chamber (100), a plasma gas channel (400) is arranged at the top of the reaction chamber (100), and a byproduct channel (500) is arranged at the bottom of the reaction chamber (100); During operation, the wafer enters the interior of the reaction chamber (100) through the transfer channel (110) and is transferred to the heater (300). The plasma gas enters the interior of the reaction chamber (100) through the plasma gas channel (400) for deposition, and the formed by-products are discharged through the by-product channel (500).

10. The semiconductor process equipment according to claim 9, wherein: The invention also includes a barrier portion (600), wherein the barrier portion (600) is fixedly arranged inside the reaction chamber (100) and is arranged between the plasma gas channel (400) and the heater (300).

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