Atomizing core and electronic atomizing device

Abstract

The utility model provides an atomizing core and an electronic atomizing device. And the arrangement of the second liquid guide through holes facilitates the uniform distribution of the atomization substrate in the semiconductor heating layer, and is beneficial to improving the heating consistency. The semiconductor heating layer is designed to be hollowed out, the heating area is reduced while the frame size of the whole semiconductor heating layer is not reduced, heating is more concentrated, a good atomization temperature can be achieved, and therefore the taste and the aerosol amount are improved.

Description

Technical Field

[0001] The present application relates to the field of electronic atomization, and in particular to an atomization core and an electronic atomization device. Background Art

[0002] The atomizer core usually includes a heating element and a liquid-conducting element.

[0003] When atomizing, the heat of traditional sheet heating elements usually diffuses to cover the entire heating element, causing the temperature of the entire heating element to be basically consistent, making it difficult to achieve a good atomization temperature, thereby making it difficult to achieve a good aerosol volume and taste. Utility Model Content

[0004] The present application provides an atomizer core and an electronic atomizer device to solve the problem of how to improve the atomization performance of the atomizer core.

[0005] In order to solve the above technical problems, the first technical solution provided in this application is: to provide an atomization core, which includes a semiconductor substrate, a semiconductor heating layer and an electrode: the semiconductor substrate has a relative liquid absorption surface and an atomization surface; the semiconductor substrate has a plurality of first liquid conduction holes extending from the liquid absorption surface to the atomization surface, and the first liquid conduction holes are used to conduct the atomization matrix; the semiconductor heating layer is arranged on the atomization surface, and has a plurality of second liquid conduction holes; the second liquid conduction holes are connected to the first liquid conduction holes; the semiconductor heating layer has a plurality of hollow portions; the electrode is at least partially arranged on the atomization surface, and is electrically connected to the semiconductor heating layer.

[0006] The semiconductor substrate has a plurality of openings, and the hollow portions are aligned with and connected to the openings one by one; in the thickness direction of the semiconductor substrate, the hollow portions and the openings are overlapped.

[0007] Among them, the opening is a through groove, which runs through the liquid absorption surface and the atomization surface; the second liquid conducting hole is arranged one by one and connected to the first liquid conducting hole; or, the opening is a blind groove, which is connected to the atomization surface; the number of the second liquid conducting holes is less than the number of the first liquid conducting holes, and each opening is connected to multiple first liquid conducting holes.

[0008] Among them, the resistivity of the semiconductor heating layer is smaller than the resistivity of the semiconductor substrate; the semiconductor heating layer includes a frame area and a mesh area, the frame area is arranged around the mesh area and is connected to the mesh area; the mesh area includes a plurality of strip heating parts, the strip heating parts are crisscrossed to define a plurality of hollow parts, and the second liquid guide hole is at least opened in the mesh area and passes through the strip heating parts.

[0009] Among them, a sink groove is opened on the atomized surface of the semiconductor substrate; the semiconductor heating layer is a doped semiconductor substrate, the doped semiconductor substrate is embedded in the sink groove and is in contact with the bottom wall of the sink groove; the second liquid guide hole passes through the doped semiconductor substrate; the opening is connected to the bottom wall of the sink groove.

[0010] The two ends of the sink are open along the first direction; the two side walls of the sink along the second direction are respectively enclosed to form a limiting area; the first direction and the second direction are arranged to intersect; the shape and size of the doped semiconductor substrate are adapted to the shape and size of the sink.

[0011] Among them, the semiconductor substrate is an intrinsic semiconductor substrate; local doping is performed on the atomized surface of the intrinsic semiconductor substrate to form a semiconductor heating layer; the thickness of the semiconductor heating layer is less than the thickness of the intrinsic semiconductor substrate; the first liquid conducting hole and the corresponding second liquid conducting hole are different hole sections of the same hole of the intrinsic semiconductor substrate; the hollow portion and the corresponding opening are different hole sections of the same hole of the intrinsic semiconductor substrate.

[0012] Among them, the distance from the surface of the semiconductor heating layer close to the liquid absorption surface to the liquid absorption surface is less than or equal to 0.5 mm; the thickness of the semiconductor substrate is less than or equal to 1 mm; the first liquid conduction hole and the second liquid conduction hole are both straight through holes; the aperture of the straight through hole is 5 microns to 100 microns.

[0013] In which, the atomizer core also includes a substrate, which is arranged on the liquid absorption surface; the substrate includes a glass substrate, a quartz substrate or a dense ceramic substrate; the substrate has a plurality of third liquid conducting holes, the number of the third liquid conducting holes is greater than or equal to the number of the second liquid conducting holes, and one second liquid conducting hole is aligned with and connected to only one third liquid conducting hole; the aperture of the third liquid conducting hole is greater than or equal to the aperture of the second liquid conducting hole, and greater than or equal to the aperture of the first liquid conducting hole; the aperture of the third liquid conducting hole is less than or equal to 100 microns.

[0014] In order to solve the above technical problems, the second technical solution provided in this application is: to provide an electronic atomization device, which includes a liquid storage chamber and an atomization core as described above; the liquid storage chamber is used to store the atomization matrix and is connected to the atomization core.

[0015] Beneficial effects of the present application: The semiconductor substrate in the present application plays a role of guiding liquid in the atomization core. Compared with the traditional ceramic liquid guiding parts, the semiconductor substrate uses MEMS processing technology to obtain the first liquid guiding hole. The first liquid guiding hole is orderly, and the pores are relatively fixed and straight, which is conducive to the transmission of the atomized matrix, ensuring high transmission efficiency and good taste restoration. Secondly, the semiconductor heating layer replaces the traditional metal heating element, and uses semiconductor technology to dope the semiconductor material to make it conductive. During atomization, problems such as metal corrosion can be avoided, thereby greatly reducing or even eliminating heavy metals, thereby improving safety. The provision of the second liquid guiding hole facilitates the uniform distribution of the atomized matrix in the semiconductor heating layer, which is conducive to improving the consistency of heating. In addition, the semiconductor heating layer is hollowed out. While not reducing the frame size of the entire semiconductor heating layer, the heating area is reduced, making the heat more concentrated to achieve a better atomization temperature, thereby improving the taste and aerosol volume. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technical workers in this field, other drawings can be obtained based on these drawings without any creative work.

[0017] Figure 1 This is a structural diagram of an embodiment of the atomizer core provided by the present application;

[0018] Figure 2 This is a schematic diagram of the explosion structure of an embodiment of the atomizer core provided by the present application;

[0019] Figure 3 This is a schematic top view of the structure of an embodiment of the atomizer core provided by the present application;

[0020] Figure 4 This is a schematic cross-sectional view of an embodiment of the atomizer core provided by the present application;

[0021] Figure 5 yes Figure 4 Schematic diagram of the local enlarged structure at E in the middle;

[0022] Figure 6 This is a schematic diagram of the explosion structure of another embodiment of the atomizer core provided by the present application;

[0023] Figure 7 This is a schematic top view of another embodiment of the atomizer core provided by the present application;

[0024] Figure 8 This is a schematic cross-sectional view of another embodiment of the atomizer core provided by the present application;

[0025] Figure 9 yes Figure 8 Schematic diagram of the local enlarged structure at F in the middle;

[0026] Figure 10 This is a schematic structural diagram of an embodiment of the electronic atomization device provided by the present application;

[0027] Figure 11 It is a structural schematic diagram of another embodiment of the electronic atomization device provided in this application.

[0028] Description of Figure Numbers:

[0029] 1. Atomizer core; 10. Semiconductor substrate; 10A. Liquid absorption surface; 10B. Atomization surface; 11. First liquid guide hole; 12. Sink; 121. Limiting area; 122. Opening; 13. Non-opening area; 14. Opening; 20. Semiconductor heating layer; 21. Second liquid guide hole; 22. Frame area; 23. Mesh area; 231. Strip heating part; 232. Hollow part; 30. Electrode; 40. Substrate; 41. Third liquid guide hole; D1, first direction; D2, second direction; 100, atomizer; 2. Liquid storage chamber; 300, electronic atomization device; 200, battery assembly. DETAILED DESCRIPTION

[0030] The following describes the embodiments of the present application in detail with reference to the accompanying drawings.

[0031] In the following description, for the purpose of explanation rather than limitation, specific details such as specific system structures, interfaces, and technologies are provided to facilitate a thorough understanding of the present application.

[0032] The following will be combined with the accompanying drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0033] The terms "first," "second," and "third" in this application are used only for descriptive purposes and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first," "second," or "third" may explicitly or implicitly include at least one of such features. In the description of this application, "multiple" means at least two, for example, two, three, etc., unless otherwise specifically defined. All directional indications in the embodiments of this application (such as up, down, left, right, front, back...) are only used to explain the relative positional relationship, movement, etc. between the components under a specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indications also change accordingly. In addition, the terms "including" and "having," as well as any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units that are not listed, or may optionally include other steps or units that are inherent to these processes, methods, products, or devices.

[0034] References herein to "embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiments may be included in at least one embodiment of the present application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, that the embodiments described herein may be combined with other embodiments.

[0035] In the prior art, the atomizer core includes a heating element and a liquid-conducting element. The atomizer core is generally a cotton core or a ceramic core. The liquid-conducting element is made of ceramic or cotton material, including but not limited to pure cotton fiber, linen, and the like. The heating element is made of printed thick film, thin film, or metal materials such as metal mesh and spring wire. These atomizer cores have the following pain points:

[0036] 1. There's a risk of loose fit between the heating element and the liquid guide element. Thick-film printing on ceramics can cause peeling due to poor adhesion. The heating element may also not fit tightly against the cotton wick during assembly. A loose fit between the liquid guide element and the heating element can lead to dry heating, affecting the user experience and compromising safety.

[0037] 2. Cotton wicks and ceramics are porous media structures with disordered internal pores. Cotton wicks are soft and easily deformed during assembly. Different materials and different compression levels will result in different pore sizes, which will affect safety, taste, atomization state, consistency, etc. While porous ceramics have relatively fixed pore sizes, they can still contain oversized or undersized pores, as well as numerous blind holes. These abnormal pores can cause problems such as carbon deposits and wick sticking, affecting safety and user experience.

[0038] 3. Current heating elements are all made of metal or materials with metal as the main component. During the process of e-liquid immersion or atomization, chemical corrosion or electrochemical corrosion is prone to occur, leading to the precipitation of heavy metals, which in turn affects safety.

[0039] 4. At present, porous media atomizer cores may have problems such as the adsorption of flavors and spices, resulting in poor taste restoration. In addition, long-term accumulation of flavors and spices or large-molecule sweeteners will also reduce the service life of the atomizer core, causing carbon deposition or excessive aldehydes and ketones.

[0040] In the existing technology, when the heating element is a whole piece of silicon-based material, this type of atomizer core has the following pain points:

[0041] 1. Due to the high thermal conductivity of silicon-based materials, the temperature of the entire silicon-based heating element tends to be roughly consistent during atomization. If the heating area is too large, the heat will spread throughout the heating element, making it difficult to achieve a good atomization temperature, resulting in poor aerosol volume and flavor. If the heating element temperature is uniform and there is no temperature gradient, it is difficult to ensure a good flavor.

[0042] 2. If the silicon-based heating element is made very small to avoid the problem of too large a heating area, it will be difficult to seal the structure. Therefore, the larger the silicon-based heating element is, the more friendly it is to structural assembly and sealing.

[0043] See also Figure 1 and Figure 2 , Figure 1 This is a structural diagram of an embodiment of the atomizer core provided by this application. Figure 2 This is a schematic diagram of the explosion structure of an embodiment of the atomizer core provided in this application.

[0044] Therefore, in order to solve the problems of the prior art, the present application provides an atomizer core 1. The atomizer core 1 includes a semiconductor substrate 10, a semiconductor heating layer 20 and an electrode 30. The semiconductor substrate 10 has a relative liquid absorption surface 10A and an atomization surface 10B. The semiconductor substrate 10 has a plurality of first liquid conduction holes 11 extending from the liquid absorption surface 10A to the atomization surface 10B, and the first liquid conduction holes 11 are used to conduct the atomization matrix. The semiconductor heating layer 20 is arranged on the atomization surface 10B and has a plurality of second liquid conduction holes 21. The second liquid conduction holes 21 are connected to the first liquid conduction holes 11. The semiconductor heating layer 20 has a plurality of hollow portions 232. The electrode 30 is at least partially arranged on the atomization surface 10B and is electrically connected to the semiconductor heating layer 20.

[0045] The semiconductor substrate 10 in this application plays a role in guiding liquid in the atomizer core 1. Compared with traditional ceramic liquid guides, the semiconductor substrate 10 uses MEMS (Micro-Electro-Mechanical Systems) processing technology to obtain the first liquid guide hole 11. The first liquid guide hole 11 is orderly, with relatively fixed and straight pores, which is conducive to the transmission of the atomized matrix, ensuring high transmission efficiency and good taste restoration. Secondly, the semiconductor heating layer 20 replaces the traditional metal heating element and uses semiconductor technology to dope the semiconductor material to make it conductive. During atomization, it can avoid problems such as metal corrosion, thereby significantly reducing or even eliminating heavy metals, thereby improving safety. The provision of the second liquid guide hole 21 facilitates the uniform distribution of the atomized matrix within the semiconductor heating layer 20, which is conducive to improving the consistency of heating. In addition, the semiconductor heating layer 20 is hollowed out. While not reducing the frame size of the entire semiconductor heating layer 20, it reduces the heating area, making the heat more concentrated to achieve a better atomization temperature, thereby improving the taste and aerosol volume.

[0046] The semiconductor substrate 10 can serve as a guide structure and a storage structure for conducting the atomized substrate to the semiconductor heating layer 20. The semiconductor heating layer 20 is used to heat the atomized substrate to generate aerosol.

[0047] In some embodiments, the semiconductor substrate 10 is an intrinsic silicon substrate, and the semiconductor heating layer 20 is a doped conductive silicon layer or a doped non-silicon semiconductor layer. The thickness of the semiconductor heating layer 20 is less than that of the semiconductor substrate 10.

[0048] In some embodiments, the semiconductor substrate 10 can be made of germanium, gallium arsenide, gallium nitride, silicon carbide, or the like. Furthermore, the semiconductor substrate 10 can be replaced with a conductive ceramic substrate or a conductive glass substrate. The semiconductor heating layer 20 is an electrothermal material made by doping a semiconductor substrate.

[0049] In some embodiments, the semiconductor heating layer 20 may be an electrothermal material made of a monocrystalline silicon or polycrystalline silicon substrate doped with metal atoms, wherein the doped metal atoms include one or more of copper atoms, zinc atoms, manganese atoms, aluminum atoms, gallium atoms, and antimony atoms, including but not limited to these.

[0050] In other embodiments, the semiconductor heating layer 20 may be an electrothermal material made by doping a monocrystalline silicon or polycrystalline silicon substrate with non-metallic atoms, wherein the doped non-metallic atoms include one or more of phosphorus, arsenic, and boron, including but not limited to these.

[0051] In some embodiments, the resistivity of the semiconductor heating layer 20 is less than that of the semiconductor substrate 10. The semiconductor heating layer 20 includes a frame region 22 and a mesh region 23. The frame region 22 surrounds and connects to the mesh region 23. The mesh region 23 includes a plurality of strip-shaped heating portions 231, which are crisscrossed to define a plurality of hollow portions 232. The second liquid-conducting through hole 21 is at least provided in the mesh region 23 and extends through the strip-shaped heating portions 231.

[0052] The size of the hollow portion 232 is much larger than the size of the second liquid-conducting through hole 21 .

[0053] It should be noted that the hollow portion 232 is not designed to conduct the atomized matrix, but to reduce the heating area of the semiconductor heating layer 20. The provision of the frame area 22 is beneficial to the structural stability of the entire semiconductor heating layer 20.

[0054] Specifically, the projection shape of the hollow portion 232 located close to the frame area 22 is a triangle, and the projection shape of the hollow portion 232 away from the frame area 22 is a rhombus.

[0055] In other embodiments, the projection shape of the hollow portion 232 may be a regular shape such as a rhombus, triangle, trapezoid, pentagon, hexagon, ellipse, circle, fan-shaped, etc., or an irregular shape such as a teardrop shape, star shape, etc.

[0056] The resistivity of the semiconductor heating layer 20 is lower than that of the semiconductor substrate 10, so that the semiconductor heating layer 20 has better heating efficiency. The resistivity of the semiconductor heating layer 20 and the semiconductor substrate 10 is not limited here and can be selected according to actual needs.

[0057] The second liquid conducting hole 21 penetrates the strip-shaped heating portion 231 in the thickness direction of the semiconductor substrate 10 , so as to conduct the atomized matrix into the strip-shaped heating portion 231 through the second liquid conducting hole 21 , so that the atomized matrix can be evenly distributed in the strip-shaped heating portion 231 .

[0058] In some embodiments, the second liquid conducting hole 21 may be located in the frame area 22 in addition to the mesh area 23 .

[0059] In some embodiments, the thickness of the semiconductor substrate 10 is less than or equal to 1 mm.

[0060] In a preferred embodiment, the thickness of the semiconductor substrate 10 is less than or equal to 0.5 mm.

[0061] In a preferred embodiment, the semiconductor heating layer 20 has a thickness of approximately 100 microns. The thinness of the semiconductor heating layer 20 results in a shorter second liquid-conducting through-hole 21, leaving virtually no space for storing the atomized substrate. This allows the atomized substrate introduced from the semiconductor substrate 10 to the semiconductor heating layer 20 to be directly heated and atomized during each heating operation without being subjected to cyclic heating, thereby ensuring a consistent and fresh aerosol taste.

[0062] The cross section of the semiconductor substrate 10 may be in a rectangular, circular, parallelogram, irregular polygon, or other shapes.

[0063] In this embodiment, the semiconductor substrate 10 is described as a rectangular parallelepiped, that is, the cross section of the semiconductor substrate 10 is a rectangle.

[0064] The shape of the semiconductor substrate 10 is not limited to a rectangular parallelepiped, and its external structure can be designed into other shapes according to structural assembly requirements, such as a cube, a cylinder, a prism with rounded corners, etc.

[0065] The first liquid guiding hole 11 can serve as a guiding structure and a storage structure for the atomized matrix, and is used to guide the atomized matrix on the liquid absorption surface 10A into the atomization surface 10B.

[0066] The cross section of the first liquid-conducting through hole 11 can be designed to be circular, square, triangular or irregular polygonal.

[0067] In this embodiment, the cross section of the first liquid-conducting through hole 11 is circular as an example for description. The plurality of first liquid-conducting through holes 11 are arranged in a matrix.

[0068] In other embodiments, the plurality of first liquid-conducting through holes 11 may be arranged in other arrangements such as a radial arrangement, and is not limited to the above embodiment.

[0069] The first liquid conducting through hole 11 and the second liquid conducting through hole 21 are both prepared using MEMS processing technology. The use of MEMS processing technology can ensure that the uniformity of the multiple first liquid conducting through holes 11 in the semiconductor substrate 10 is good, and the appearance of abnormal holes can be effectively avoided. Secondly, the first liquid conducting through hole 11 and the second liquid conducting through hole 21 are both ordered holes with a fixed aperture to avoid problems such as carbon deposits and core sticking. In addition, the semiconductor substrate 10 has a better hardness than the cotton core, and it is not easy to cause the aperture deformation of the first liquid conducting through hole 11 during the assembly process, so that the consistency of the first liquid conducting through hole 11 is better, which is beneficial to improving the safety, taste and atomization state of the atomizer core 1.

[0070] In some embodiments, the first liquid-conducting through hole 11 and the second liquid-conducting through hole 21 are both straight through holes, and the pore size of the straight through hole is 5 microns to 100 microns. For example, the pore size of the straight through hole can be 5 microns, 10 microns, 15 microns, 20 microns, 30 microns, 40 microns, 50 microns, 60 microns, 70 microns, 80 microns, 90 microns, 100 microns, etc. The manufacturing process of the straight through hole is relatively simple and easy to achieve mass production; secondly, the flow path of the atomized matrix in the straight through hole is simple and direct, which reduces its flow resistance and residence time, and helps to improve the liquid conduction efficiency.

[0071] The apertures of the first liquid-conducting through hole 11 and the second liquid-conducting through hole 21 may be the same or different.

[0072] In a preferred embodiment, the aperture of the second liquid guiding hole 21 is smaller than that of the first liquid guiding hole 11, so that the atomized matrix in the first liquid guiding hole 11 can flow smoothly into the second liquid guiding hole 21, ensuring the smooth supply of the atomized matrix and ensuring the liquid guiding efficiency of the first liquid guiding hole 11 to prevent hole blockage; at the same time, it can also avoid the storage of the atomized matrix in the second liquid guiding hole 21 and affecting the taste of the aerosol, and make the aerosol atomized from the second liquid guiding hole more delicate.

[0073] In other embodiments, the aperture of the second liquid-conducting through hole 21 may be larger than the aperture of the first liquid-conducting through hole 11 .

[0074] In a preferred embodiment, the diameter of the through hole is 10 microns to 50 microns.

[0075] The semiconductor heating layer 20 is arranged in close contact with the atomizing surface 10B to prevent the semiconductor heating layer 20 from burning dry, thereby affecting the user experience and safety.

[0076] See also Figures 1 to 5 , Figure 3 This is a schematic diagram of the top view of an embodiment of the atomizer core provided by this application. Figure 4 This is a schematic cross-sectional view of an embodiment of the atomizer core provided by the present application. Figure 5 yes Figure 4 Schematic diagram of the local enlarged structure at E in the middle.

[0077] In some embodiments, the semiconductor substrate 10 has a plurality of openings 14, and the hollow portions 232 are aligned and connected to the openings 14 one by one. The semiconductor substrate 10 has a high thermal conductivity and is arranged in contact with the semiconductor heating layer 20, so that the heat on the semiconductor heating layer 20 can also be quickly transferred to the semiconductor substrate 10. The closer the semiconductor substrate 10 is to the semiconductor heating layer 20, the faster the heat transfer speed and the higher the temperature. By providing the openings 14 on the semiconductor substrate 10, the area of the openings 14 is an area with a relatively low temperature when heated, so as to increase the height difference between the semiconductor substrate 10 and the semiconductor heating layer 20 in the area of the openings 14, increase the heat transfer path, and block the atomization matrix conducted in the area of the openings 14 from being heated and atomized. At the same time, the concentrated heating area is limited to the area in contact with the semiconductor heating layer 20 and the semiconductor substrate 10. Since the temperature of the concentrated heating area where the semiconductor heating layer 20 is located is the highest, a better atomization temperature can be achieved during heating, thereby improving the taste and aerosol volume.

[0078] In some embodiments, in the thickness direction of the semiconductor substrate 10, the hollow portion 232 overlaps with the opening 14 so that the first liquid conducting hole 11 and the second liquid conducting hole 21 are aligned and connected, thereby ensuring the supply rate of the atomized matrix in the concentrated heating area.

[0079] In other embodiments, the orthographic projection of the hollow portion 232 on the semiconductor substrate 10 may cover the corresponding opening 14 or may be located within the corresponding opening 14 , depending on actual needs.

[0080] In some embodiments, the opening 14 is a through-groove extending through the liquid aspiration surface 10A and the atomization surface 10B. The second liquid-conducting through-holes 21 are aligned and connected to the first liquid-conducting through-holes 11. The number of first liquid-conducting through-holes 11 is equal to the number of second liquid-conducting through-holes 21. The opening 14 extends through the semiconductor substrate 10 in the thickness direction to minimize the possibility of heating and atomizing the atomized substrate conducted through the opening 14 region.

[0081] In some embodiments, a sink 12 is provided on the atomized surface 10B of the semiconductor substrate 10. The semiconductor heating layer 20 is a doped semiconductor substrate, which is embedded in the sink 12 and is in contact with the bottom wall of the sink 12. The second liquid guide hole 21 passes through the doped semiconductor substrate. The opening 14 is connected to the bottom wall of the sink 12. It should be noted that, in this embodiment, the semiconductor substrate 10 and the doped semiconductor substrate are prepared separately, and then the doped semiconductor substrate is embedded in the sink 12. In other words, the semiconductor substrate 10 and the doped semiconductor substrate are not an integral structure formed as a whole, but a combined structure that is interconnected by embedding.

[0082] The semiconductor substrate 10 and the semiconductor heating layer 20 can be connected by bonding, adhering, laminating or the like.

[0083] In some embodiments, since both the semiconductor substrate 10 and the semiconductor heating layer 20 use semiconductor base materials, there is better interface compatibility between the two and better bonding consistency, which can further reduce the dry burning phenomenon, thereby improving the user experience and safety.

[0084] In some embodiments, both ends of the sink 12 along the first direction D1 are open 122. The two sidewalls of the sink 12 along the second direction D2 are enclosed to form limiting regions 121. The first direction D1 and the second direction D2 intersect. The shape and size of the doped semiconductor substrate are adapted to those of the sink 12. The depth of the sink 12 is equal to the thickness of the doped semiconductor substrate.

[0085] The two ends of the sink 12 in the first direction D1 are open 122, which can reduce the alignment requirements and facilitate the installation of the semiconductor heating layer 20 in the sink 12. The limiting area 121 can limit the semiconductor heating layer 20 in the first direction D1, making it easier to fix the semiconductor heating layer 20 in the sink 12.

[0086] The shape and size of the doped semiconductor substrate are adapted to the shape and size of the sink 12 , that is, the semiconductor heating layer 20 and the space enclosed by the sink 12 have the same shape and the same size.

[0087] It should be understood that, in order to facilitate assembly, the size of the semiconductor heating layer 20 may be slightly smaller than the size of the space enclosed by the sink 12 .

[0088] The depth of the sinking groove 12 is equal to the thickness of the doped semiconductor substrate to ensure that the semiconductor substrate is flush with the surface of the semiconductor base plate 10, with better flatness, which facilitates the subsequent installation of the electrode 30 on the surface of the semiconductor heating layer 20 and the atomized surface 10B.

[0089] In some embodiments, there is a gap between the side of the groove 12 and the side of the doped semiconductor substrate, and the gap is filled with bonding material, so that the semiconductor heating layer 20 can be bonded not only to the bottom wall of the groove 12, but also to the side wall of the groove 12, so as to better fix the semiconductor heating layer 20 to the atomized surface 10B of the semiconductor substrate 10, avoid dry burning, and facilitate the installation of the semiconductor heating layer 20 in the groove 12.

[0090] In other embodiments, the depth of the sinking groove 12 may be less than or greater than the thickness of the doped semiconductor substrate, depending on actual needs. There may also be no gap between the side surfaces of the sinking groove 12 and the side surfaces of the doped semiconductor substrate.

[0091] In some embodiments, the confining region 121 of the semiconductor substrate 10 and the portion of the doped semiconductor substrate located in the confining region 121 constitute the non-perforated region 13. The first liquid-conducting through-hole 11 is provided only in the sink 12 region. Two electrodes 30 are provided, disposed on opposite sides of the atomizing surface 10B along the second direction D2. Each electrode 30 is partially disposed on the surface of the semiconductor substrate 10 and partially disposed on the surface of the non-perforated region 13 of the doped semiconductor substrate.

[0092] It should be noted that the non-perforated area 13 of the present application does not have the first liquid-conducting through-hole 11 and the second liquid-conducting through-hole 21. The first liquid-conducting through-hole 11 is provided in the area of the sink 12, excluding the limiting area 121. In other words, the semiconductor substrate 10 is not fully perforated. Furthermore, the semiconductor heating layer 20 is not fully perforated, and the portion located in the non-perforated area 13 is not provided with the second liquid-conducting through-hole 21.

[0093] The electrode 30 is partially disposed on the surface of the non-perforated area 13 to prevent the electrode 30 from covering the second liquid-conducting through hole 21 and blocking aerosol.

[0094] Part of each electrode 30 is disposed on the surface of the semiconductor substrate 10, thereby reserving a contact area on the electrode 30. This contact area is projected onto the surface of the semiconductor substrate 10, rather than the surface of the semiconductor heating layer 20. Connection to an external power source via the contact area reduces the effects of thermal stress and extends the service life of the electrode 30.

[0095] The electrode 30 is made of a metal material, including but not limited to high conductivity materials such as silver, gold, nickel, and aluminum. The electrode 30 can be made separately or plated on the semiconductor substrate 10 as a whole.

[0096] The semiconductor substrate 10, the semiconductor heating layer 20 and the electrode 30 are a stacked structure, which can be processed and packaged using semiconductor technology to achieve modular production.

[0097] In other embodiments, the semiconductor substrate 10 is an intrinsic semiconductor substrate 10. Local doping is performed on the atomized surface 10B of the intrinsic semiconductor substrate 10 to form a semiconductor heating layer 20. The thickness of the semiconductor heating layer 20 is less than that of the intrinsic semiconductor substrate 10. The semiconductor substrate 10 and the semiconductor heating layer 20 are an integrally formed structure, which can reduce assembly; and there is no need to process a metal conductive pattern on the surface of the substrate as a heating element, which can prevent the heating element on the substrate surface from falling off due to poor adhesion. It should be noted that in this embodiment, the semiconductor substrate 10 and the semiconductor heating layer 20 are an integrally formed structure. In the direction from the atomized surface 10B to the liquid absorption surface 10A, the atomized surface 10B of the semiconductor substrate 10 is doped to a certain depth to form the semiconductor heating layer 20. It can be regarded as that the semiconductor heating layer 20 is part of the semiconductor substrate 10. In other words, before and after doping, the semiconductor heating layer 20 and the semiconductor substrate 10 are an integral structure.

[0098] The first liquid-conducting through hole 11 and the corresponding second liquid-conducting through hole 21 are different sections of the same through hole of the intrinsic semiconductor substrate 10, which can simplify the preparation process of the liquid-conducting through hole and reduce the alignment requirements of the first liquid-conducting through hole 11 and the second liquid-conducting through hole 21. In other words, the first liquid-conducting through hole 11 and the second liquid-conducting through hole 21 have the same aperture.

[0099] Similarly, the hollow portion 232 and the corresponding opening 14 are different hole sections of the same through hole of the intrinsic semiconductor substrate 10 , which can simplify the preparation process of the hollow portion 232 and the opening 14 and reduce the alignment requirements of the hollow portion 232 and the opening 14 .

[0100] The thickness of the semiconductor heating layer 20 is less than that of the intrinsic semiconductor substrate 10 to retain the liquid-conducting and liquid-storing functions of the intrinsic semiconductor substrate 10 and to prevent the entire semiconductor substrate 10 from being doped into the semiconductor heating layer 20. It should be understood that the entire semiconductor substrate 10 forms the semiconductor heating layer 20. The semiconductor substrate 10 has a certain thickness, which makes the semiconductor heating layer 20 have a liquid storage function. As a result, the atomized matrix in the semiconductor heating layer 20 will be repeatedly heated, affecting the taste of the aerosol. If the semiconductor heating layer 20 is directly connected to the liquid storage chamber 2 that stores the atomized matrix, a cavity explosion phenomenon will also occur.

[0101] The semiconductor heating layer 20 is directly formed by doping on the intrinsic semiconductor substrate 10 , and there is no dry-burning phenomenon of the semiconductor heating layer 20 .

[0102] In some embodiments, the distance between the surface of the semiconductor heating layer 20 close to the liquid absorbing surface 10A and the liquid absorbing surface 10A is less than or equal to 0.5 mm.

[0103] In some embodiments, the atomizer core 1 further includes a substrate 40, which is disposed on the liquid suction surface 10A. The substrate 40 includes a glass substrate, a quartz substrate, or a dense ceramic substrate. The substrate 40 has a plurality of third liquid-conducting through holes 41. The number of third liquid-conducting through holes 41 is greater than or equal to the number of second liquid-conducting through holes 21. One second liquid-conducting through hole 21 is aligned with and connected to only one third liquid-conducting through hole 41. The aperture of the third liquid-conducting through hole 41 is greater than or equal to the aperture of the second liquid-conducting through hole 21, and greater than or equal to the aperture of the first liquid-conducting through hole 11, so that the third liquid-conducting through hole 41 can transfer the atomized matrix to the second liquid-conducting through hole 21.

[0104] The substrate 40 serves as a guide structure and a storage structure for transferring the atomized matrix to the semiconductor substrate 10. The substrate 40 can also support the semiconductor substrate 10.

[0105] In some embodiments, the diameter of the third liquid-conducting through hole 41 is less than or equal to 100 micrometers.

[0106] See also Figure 2 、 Figures 6 to 9 , Figure 6 This is a schematic diagram of the explosion structure of another embodiment of the atomizer core provided by this application. Figure 7 This is a schematic top view of another embodiment of the atomizer core provided by the present application. Figure 8 This is a schematic cross-sectional view of another embodiment of the atomizer core provided by the present application. Figure 9 yes Figure 8 Schematic diagram of the local enlarged structure at F in the middle.

[0107] In other embodiments, the opening 14 is a blind groove that connects to the atomizing surface 10B. The number of second liquid-conducting through-holes 21 is less than the number of first liquid-conducting through-holes 11, and each opening 14 connects to multiple first liquid-conducting through-holes 11. In other words, the opening 14 region is further provided with a first liquid-conducting through-hole 11, resulting in a smaller number of second liquid-conducting through-holes 21 than the first liquid-conducting through-holes 11. The hollow portion 232 exposes the first liquid-conducting through-holes 11 in the opening 14 region.

[0108] A second liquid conducting hole 21 is aligned with and connected to only one first liquid conducting hole 11 to ensure that the atomized matrix can be conducted to the semiconductor heating layer 20 through the second liquid conducting hole 21 and the first liquid conducting hole 11 in sequence, thereby ensuring the smooth supply of the atomized matrix.

[0109] It should be noted that when the opening 14 is a blind groove or a through groove, the semiconductor heating layer 20 and the semiconductor substrate 10 can be prepared separately, that is, the semiconductor heating layer 20 can be embedded in the semiconductor substrate 10. Referring to the above description, it will not be repeated here.

[0110] When the opening 14 is a blind groove or a through groove, the semiconductor heating layer 20 and the semiconductor substrate 10 can also be an integrated structure. Please refer to the above description and will not be repeated here.

[0111] See also Figure 10 , Figure 10 It is a structural schematic diagram of an embodiment of the electronic atomization device provided in this application.

[0112] The present application provides an electronic atomization device 300. The electronic atomization device 300 includes a liquid storage chamber 2 and the aforementioned atomization core 1. The liquid storage chamber 2 is used to store atomization substrate and is in communication with the atomization core 1 to supply the atomization substrate to the atomization core 1.

[0113] In some embodiments, the electronic atomization device 300 can be used as an atomizer 100 , which includes a liquid storage chamber 2 and the atomization core 1 described above.

[0114] In this embodiment, the atomizer core 1 is disposed below the liquid storage chamber 2 and is horizontally placed.

[0115] The atomizer core 1 can also be placed vertically or tilted. For example, the atomizer core 1 can be placed at a certain angle to the horizontal plane, or at a certain angle to the circumference of the atomizer 100. That is, this application does not limit the placement angle of the atomizer core 1.

[0116] In other embodiments, the atomizer core 1 can also be arranged on the side of the liquid storage chamber 2, or can also be partially embedded in the liquid storage chamber 2. That is, the atomizer core 1 and the liquid storage chamber 2 can also be arranged in other ways, which are not limited here and can be selected according to actual assembly requirements.

[0117] See also Figure 11 , Figure 11 It is a structural schematic diagram of another embodiment of the electronic atomization device provided in this application.

[0118] In other embodiments, the electronic atomization device 300 further includes a battery assembly 200. That is, the electronic atomization device 300 may also be a device comprising the battery assembly 200 and the aforementioned atomizer 100. The battery assembly 200 is used to power the atomizer 100 for operation. The battery assembly 200 is electrically connected to the electrodes in the atomizer core 1 to power the atomizer 100, thereby forming a path between the electrodes in the atomizer core 1 and the semiconductor heating layer. This allows the semiconductor heating layer to act as a resistor to generate Joule heat, thereby heating the atomized substrate to generate aerosol.

[0119] The electronic atomization device 300 may also include a housing, a nozzle, a microphone and other structures, which will not be described in detail here. The detailed structural features of the electronic atomization device 300 are within the scope of understanding of those skilled in the art and will not be repeated here. The structure of the electronic atomization device 300 can be a variety of structures and forms. As long as it uses the atomization core structure in the embodiment of the present application, it should be included in the scope of protection of this application.

[0120] In the above embodiments, the description of each embodiment has its own focus. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0121] The above is only an implementation method of the present application and does not limit the scope of patent protection of the present application. Any equivalent structure or equivalent process transformation made using the contents of the description and drawings of this application, or directly or indirectly applied in other related technical fields, are also included in the scope of patent protection of the present application.

Claims

1. An atomizer core, characterized in that: include: A semiconductor substrate having a liquid absorption surface and an atomization surface opposite to each other; the semiconductor substrate having a plurality of first liquid conducting through holes extending from the liquid absorption surface to the atomization surface, wherein the first liquid conducting through holes are used to conduct the atomized matrix; The semiconductor heating layer is provided on the atomizing surface and has a plurality of second liquid conducting through holes; the second liquid conducting through holes are connected to the first liquid conducting through holes; the semiconductor heating layer has a plurality of hollow portions; The electrode is at least partially disposed on the atomizing surface and is electrically connected to the semiconductor heating layer.

2. The atomizer core according to claim 1, characterized in that The semiconductor substrate has a plurality of openings, and the hollow portions are aligned with and communicate with the openings one by one; in the thickness direction of the semiconductor substrate, the hollow portions are overlapped with the openings.

3. The atomizer core according to claim 2, characterized in that The opening is a through groove, and the through groove passes through the liquid suction surface and the atomization surface; the second liquid guide hole is aligned with and connected to the first liquid guide hole; or, The opening is a blind groove, and the blind groove is connected to the atomizing surface; the number of the second liquid-conducting through holes is less than the number of the first liquid-conducting through holes, and each of the openings is connected to a plurality of the first liquid-conducting through holes.

4. The atomizer core according to claim 2, characterized in that The resistivity of the semiconductor heating layer is less than that of the semiconductor substrate; the semiconductor heating layer includes a border area and a mesh area, the border area is arranged around the mesh area and is connected to the mesh area; the mesh area includes a plurality of strip-shaped heating parts, the strip-shaped heating parts are crisscrossed to define a plurality of the hollow parts, and the second liquid guide hole is at least opened in the mesh area and passes through the strip-shaped heating parts.

5. The atomizer core according to claim 3, characterized in that A sink groove is provided on the atomized surface of the semiconductor substrate; the semiconductor heating layer is a doped semiconductor substrate, which is embedded in the sink groove and is in contact with the bottom wall of the sink groove; the second liquid guide hole passes through the doped semiconductor substrate; The opening is communicated with the bottom wall of the sink.

6. The atomizer core according to claim 5, characterized in that The two ends of the sink along the first direction are open; the two side walls of the sink along the second direction are respectively enclosed to form a limiting area; the first direction and the second direction are intersected; The shape and size of the doped semiconductor substrate are adapted to the shape and size of the sink.

7. The atomizer core according to claim 3, characterized in that The semiconductor substrate is an intrinsic semiconductor substrate; the semiconductor heating layer is formed by local doping on the atomized surface of the intrinsic semiconductor substrate; the thickness of the semiconductor heating layer is less than the thickness of the intrinsic semiconductor substrate; The first liquid-conducting through hole and the corresponding second liquid-conducting through hole are different hole segments of the same through hole of the intrinsic semiconductor substrate; The hollow portion and the corresponding opening are different hole sections of the same through hole of the intrinsic semiconductor substrate.

8. The atomizer core according to claim 7, characterized in that: The distance between the surface of the semiconductor heating layer close to the liquid absorbing surface and the liquid absorbing surface is less than or equal to 0.5 mm; The thickness of the semiconductor substrate is less than or equal to 1 mm; The first liquid-conducting through hole and the second liquid-conducting through hole are both straight through holes; the aperture of the straight through hole is 5 microns to 100 microns.

9. The atomizer core according to any one of claims 1 to 8, characterized in that: The atomizer core also includes a substrate, which is arranged on the liquid absorption surface; the substrate includes a glass substrate, a quartz substrate or a dense ceramic substrate; the substrate has a plurality of third liquid conducting through holes, the number of the third liquid conducting through holes is greater than or equal to the number of the second liquid conducting through holes, and one second liquid conducting through hole is aligned with and connected to only one third liquid conducting through hole; the aperture of the third liquid conducting through hole is greater than or equal to the aperture of the second liquid conducting through hole, and greater than or equal to the aperture of the first liquid conducting through hole; the aperture of the third liquid conducting through hole is less than or equal to 100 microns.

10. An electronic atomization device, characterized in that: comprising a liquid storage chamber and an atomizing core according to any one of claims 1 to 9; The liquid storage chamber is used to store the atomization matrix and is communicated with the atomization core.

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