Atomizing core, atomizer and electronic atomizing device

Abstract

The utility model provides an atomizing core, an atomizer and an electronic atomizing device. The atomizing core comprises a heat conduction substrate, a semiconductor heating layer and an electrode. Wherein the semiconductor heating layer is arranged on one surface of the heat conduction substrate; the electrode is arranged on the surface, provided with the semiconductor heating layer, of the heat conduction substrate and is electrically connected with the semiconductor heating layer; the atomizing core is provided with a plurality of first flow guide through holes penetrating through the heat conduction substrate and the semiconductor heating layer. The first flow guide through holes are arranged in a two-dimensional array mode, and the first flow guide through holes in adjacent rows or adjacent columns are arranged in a staggered mode. According to the atomizing core, the atomizing effect can be effectively improved, and the service life of the atomizing core is prolonged.

Description

Technical Field

[0001] The utility model relates to the technical field of electronic atomization, and in particular to an atomization core, an atomizer and an electronic atomization device. Background Art

[0002] The atomizer core usually includes a heating element and a liquid-conducting element.

[0003] Traditional atomizer coils use a patterned metal film on a liquid-conducting element to create a heating element. The low heating efficiency of the metal leads to insufficient utilization of the heating surface, resulting in suboptimal atomization, inadequate atomization, and uneven heating. Long-term use can lead to performance degradation and shortened lifespan of the coil. Utility Model Content

[0004] The main technical problem to be solved by this application is how to improve the atomization effect of the atomizer and extend the service life of the atomizer core.

[0005] To solve the above technical problems, this application adopts a technical solution: providing an atomizer core comprising a heat-conducting substrate, a semiconductor heating layer, and an electrode. The semiconductor heating layer is disposed on a surface of the heat-conducting substrate; the electrode is disposed on a surface of the heat-conducting substrate on which the semiconductor heating layer is disposed and is electrically connected to the semiconductor heating layer; the atomizer core has a plurality of first conduction holes extending through the heat-conducting substrate and the semiconductor heating layer; the plurality of first conduction holes are arranged in a two-dimensional array, with adjacent rows or columns of the first conduction holes being staggered.

[0006] In a specific embodiment, the diameter of the first flow-conducting holes is greater than or equal to 10 micrometers and less than or equal to 50 micrometers; and the distance between two adjacent first flow-conducting holes is greater than or equal to 10 micrometers and less than or equal to 50 micrometers.

[0007] In a specific embodiment, the first flow-conducting holes are circular holes or regular polygonal holes, and the distance between two adjacent first flow-conducting holes is smaller than the hole diameter of the first flow-conducting holes.

[0008] In a specific embodiment, the semiconductor heating layer is a conductive silicon wafer, and the first conduction hole passes through the conductive silicon wafer.

[0009] In a specific embodiment, the surface of the semiconductor heating layer is flush with the surface of the thermally conductive substrate, and the electrode is formed on the surface of the thermally conductive substrate and at least partially covers the semiconductor heating layer.

[0010] In a specific embodiment, the thermally conductive substrate is an intrinsic semiconductor substrate; local doping is performed on the atomized surface of the intrinsic semiconductor substrate to form the semiconductor heating layer; and the thickness of the semiconductor heating layer is smaller than that of the intrinsic semiconductor.

[0011] In a specific embodiment, it also includes a liquid-conducting substrate; the liquid-conducting substrate is arranged on the surface of the thermally conductive substrate away from the semiconductor heating layer, and has a plurality of second flow-conducting holes arranged in a two-dimensional array; the second flow-conducting holes in adjacent rows or adjacent columns are also staggered, and each second flow-conducting hole in the same row corresponds to the gap between two adjacent first flow-conducting holes in the same row, and each second flow-conducting hole in the same column corresponds to the gap between two adjacent first flow-conducting holes in the same column; the surface of the thermally conductive substrate close to the liquid-conducting substrate and / or the surface of the liquid-conducting substrate close to the thermally conductive substrate are provided with grooves; the plurality of first flow-conducting holes are connected to the plurality of second flow-conducting holes through the grooves.

[0012] In a specific embodiment, the heat-conducting substrate is a silicon substrate; and / or the liquid-conducting substrate is a glass substrate or a ceramic substrate.

[0013] In order to solve the above technical problems, another technical solution adopted in this application is: to provide an atomizer, comprising a liquid storage chamber and an atomizing core as described in any of the above items; the liquid storage chamber is used to store the atomizing matrix and is connected to the atomizing core.

[0014] In order to solve the above technical problems, another technical solution adopted in this application is: to provide an electronic atomization device, including the atomizer as mentioned above.

[0015] Beneficial effects of the embodiments of the present application: Different from the prior art, the present application provides an atomizer core, an atomizer and an electronic atomization device, wherein the atomizer core includes a heat-conducting substrate, a semiconductor heating layer and an electrode. The semiconductor heating layer is arranged on a surface of the heat-conducting substrate; the electrode is arranged on the surface of the heat-conducting substrate on which the semiconductor heating layer is provided, and is electrically connected to the semiconductor heating layer; the atomizer core has a plurality of first conduction holes that pass through the heat-conducting substrate and the semiconductor heating layer; the plurality of first conduction holes are arranged in a two-dimensional array, and the first conduction holes in adjacent rows or adjacent columns are staggered. By staggering the first conduction holes in the atomizer core to reduce the distance between two adjacent first conduction holes, the atomizer core can open more first conduction holes at the same size to improve the opening rate of the atomizer core, thereby improving the utilization efficiency of the heating surface, and further effectively improving the atomization efficiency of the atomizer core. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 A schematic diagram of the structure of the atomizer core provided in the first embodiment of the present application;

[0017] Figure 2A for Figure 1 A top view of the atomizer core shown;

[0018] Figure 2B A top view of an atomizer core provided in another embodiment of the present application;

[0019] Figure 2C A top view of an atomizer core provided in yet another embodiment of the present application;

[0020] Figure 3 for Figure 2A A partial enlarged view of point A in the middle;

[0021] Figure 4 for Figure 1 The exploded diagram of the atomizer core shown;

[0022] Figure 5 for Figure 4 A cross-sectional view of the heat-conducting substrate along line BB;

[0023] Figure 6 A partially enlarged top view of the atomizer core provided in the second embodiment of the present application;

[0024] Figure 7 A partially enlarged top view of the atomizer core provided in the third embodiment of the present application;

[0025] Figure 8 This is a schematic structural diagram of an atomizer provided in one embodiment of the present application;

[0026] Figure 9 It is a structural schematic diagram of an electronic atomization device provided in one embodiment of the present application.

[0027] Description of Figure Numbers:

[0028] 100-atomizer core; 200-battery assembly; 10-atomizer core; 20-liquid storage chamber; 1-thermal conductive substrate; 2-semiconductor heating layer; 3-electrode; 4-first conduction hole; 5-liquid conductive substrate; 11-sink; 12-groove; 21-conductive silicon wafer; 51-second conduction hole. DETAILED DESCRIPTION

[0029] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0030] The terms "first," "second," and "third" in this application are used only for descriptive purposes and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first," "second," or "third" may explicitly or implicitly include at least one of such features. In the description of this application, "multiple" means at least two, for example, two, three, etc., unless otherwise specifically defined. All directional indications in the embodiments of this application (such as up, down, left, right, front, back...) are only used to explain the relative positional relationship, movement, etc. between the components under a specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indications also change accordingly. In addition, the terms "including" and "having," as well as any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units that are not listed, or may optionally include other steps or units that are inherent to these processes, methods, products, or devices.

[0031] References herein to "embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiments may be included in at least one embodiment of the present application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0032] The present application is described in detail below with reference to the accompanying drawings and embodiments.

[0033] The embodiment of the present application provides an atomizer core that can be used to convert an atomized matrix into an aerosol. The atomizer core provided in the embodiment of the present application can be a heater based on a micro-electromechanical system (MEMS). MEMS is based on microelectronics, micromechanics and materials science to research, design and manufacture micro devices with specific functions, including microstructure devices, microsensors, microactuators, micromechanical optical devices and microsystems. The MEMS processing technology was developed on the basis of traditional microelectronics processing technology (also known as integrated circuit IC technology). Later, some unique technologies for making micromachines were developed. These unique technologies are combined with conventional integrated circuit technology to realize MEMS. These technologies are collectively referred to as micromachining technology. The atomizer core material based on MEMS technology is harmless to the human body, the smoke produced by the atomizer device has a delicate taste and is not dry, and the atomizer core structure is compact and the batch production consistency is good.

[0034] See Figure 1-Figure 3 , Figure 1 A schematic diagram of the structure of the atomizer core provided in the first embodiment of the present application; Figure 2Afor Figure 1 A top view of the atomizer core shown; Figure 2B A top view of an atomizer core provided in another embodiment of the present application; Figure 2C A top view of an atomizer core provided in yet another embodiment of the present application;

[0035] Figure 3 for Figure 2A A partial enlarged view of point A in the middle. The atomizer core provided in the first embodiment of the present application may include a heat-conducting substrate 1, a semiconductor heating layer 2, and an electrode 3. The heat-conducting substrate 1 may be a silicon substrate made of single-crystal silicon. The semiconductor heating layer 2 is provided on one side surface of the heat-conducting substrate 1 and is used to atomize the atomizing matrix into an aerosol; and the resistivity of the semiconductor heating layer 2 is less than that of the heat-conducting substrate 1, so that the semiconductor heating layer 2 can conduct electricity and generate heat when powered.

[0036] The electrode 3 is disposed on the surface of the thermally conductive substrate 1 on which the semiconductor heating layer 2 is disposed, and is electrically connected to both ends of the semiconductor heating layer 2 so that a voltage is applied to the semiconductor heating layer 2 via the electrode 3 to cause the semiconductor heating layer 2 to generate heat. Specifically, the electrode 3 may cover a portion of the surface of the thermally conductive substrate 1 and a portion of the surface of the semiconductor heating layer 2.

[0037] The atomizer core has a plurality of first flow holes 4 that penetrate the thermally conductive substrate 1 and the semiconductor heating layer 2. As shown in Figure 2a, the plurality of first flow holes 4 are arranged in a two-dimensional array on the atomizer core, with adjacent rows or columns of first flow holes 4 staggered. The first flow holes 4 are used to transfer the atomized matrix from the side of the thermally conductive substrate 1 away from the semiconductor heating layer 2 to the semiconductor heating layer 2, thereby facilitating heating of the atomized matrix by the semiconductor heating layer 2.

[0038] In this way, by staggering the first flow-through holes 4 in the atomizer core to reduce the distance between two adjacent first flow-through holes 4, the atomizer core can have more first flow-through holes 4 with the same size, thereby increasing the opening rate of the atomizer core, thereby improving the utilization efficiency of the heating surface, and further effectively improving the atomization efficiency of the atomizer core.

[0039] Specifically, taking the staggered arrangement of the first flow guide holes 4 in adjacent rows as an example, in the first flow guide holes 4 in two adjacent rows, each first flow guide hole 4 can be located on the perpendicular bisector of the line connecting the centers of the two adjacent first flow guide holes 4 in the adjacent row; that is, each first flow guide hole 4 and the two adjacent first flow guide holes 4 in the adjacent row can be located at the three vertices of an isosceles triangle.

[0040] It is understandable that if the aperture of the first guide hole 4 is too small, its ability to transmit the atomized matrix is weak, and the working efficiency of the atomizer core may not meet the requirements; if the aperture of the first guide hole 4 is too large, it may affect the capillary action of the first guide hole 4, making it unable to transmit the atomized matrix. Figure 3 As shown, in a specific embodiment, the aperture a of the first flow-through hole 4 is greater than or equal to 10 microns and less than or equal to 50 microns, to ensure that the first flow-through hole 4 can transmit sufficient atomized substrate for atomization of the semiconductor heating layer while preventing leakage due to an excessively large aperture of the first flow-through hole 4. Specifically, the aperture a of the first flow-through hole 4 can be any value selected from 10 microns, 20 microns, 30 microns, 40 microns, or 50 microns.

[0041] Furthermore, the spacing b between two adjacent first flow-through holes 4 is smaller than the aperture a of the first flow-through holes 4 ; specifically, the spacing b between two adjacent first flow-through holes 4 is greater than or equal to 10 microns and less than or equal to 50 microns; this reduces the distance between two adjacent first flow-through holes 4 while ensuring the structural strength of the atomizer core, allowing the atomizer core to have more first flow-through holes 4 with the same size, thereby increasing the opening rate of the atomizer core, thereby improving the utilization efficiency of the heating surface, and further effectively improving the atomization efficiency of the atomizer core. Specifically, the spacing b between two adjacent first flow-through holes 4 can be any value of 10 microns, 20 microns, 30 microns, 40 microns, or 50 microns. It should be noted that the two adjacent first flow-through holes 4 can be two adjacent first flow-through holes 4 in the same row or column, or can be the two first flow-through holes 4 located closest to each other in two adjacent rows or columns.

[0042] 2a-2c, in some embodiments, the first flow holes 4 may be circular holes, and two adjacent rows of first flow holes 4 may be staggered (as shown in FIG. 2a); or two adjacent columns of first flow holes 4 may be staggered (as shown in FIG. 2b).

[0043] In other embodiments, the first flow-through holes 4 may also be regular polygonal holes (as shown in FIG2c ); wherein two adjacent rows or columns of regular polygonal holes are staggered, and the distance between two adjacent regular polygonal holes is equal, so that the multiple regular polygonal holes are closely packed on the atomizer core. Preferably, the regular polygonal holes may be regular hexagonal holes.

[0044] The atomization efficiency of the atomizer core in the above embodiment was tested and compared with the atomizer core with a non-offset arrangement. The results are as follows:

[0045]

[0046]

[0047] Comparative Examples 1 and 2 are atomizer cores with non-staggered first flow holes 4; Examples 1A and 1B are atomizer cores with circular first flow holes 4 and staggered first flow holes 4 in two adjacent rows; Examples 2A and 2B are atomizer cores with circular first flow holes 4 and staggered first flow holes 4 in two adjacent rows; and Examples 3A and 3B are atomizer cores with regular hexagonal first flow holes 4 and staggered first flow holes 4 in two adjacent rows. The test results show that compared to atomizer cores with non-staggered first flow holes 4, the atomizer cores with staggered first flow holes 4 have significantly improved atomization efficiency.

[0048] See Figure 4 , Figure 4 for Figure 1 An exploded schematic diagram of the atomizer core is shown. In this embodiment, a recessed groove 11 is formed on the atomizing surface of the thermally conductive substrate 1, near the semiconductor heating layer 2. The recessed groove 11 extends from the atomizing surface of the thermally conductive substrate 1 in a direction perpendicular to the stacking direction Z of the thermally conductive substrate 1, away from the semiconductor heating layer 2. The recessed groove 11 can be used to accommodate the semiconductor heating layer 2, thereby reducing the thickness of the atomizer core and facilitating its miniaturization.

[0049] The semiconductor heating layer 2 may be a conductive silicon wafer 21, which may be made of single-crystal silicon. The conductive silicon wafer 21 is embedded in the sink 11 and is in contact with the bottom wall of the sink 11. The first guide hole penetrates the conductive silicon wafer 21 to allow the atomized matrix to be transferred to the conductive silicon wafer 21, thereby increasing the contact area between the atomized matrix and the conductive silicon wafer 21 and improving the atomization efficiency.

[0050] The surface of the semiconductor heating layer 2 is flush with the surface of the thermally conductive substrate 1. The electrode 3 is formed on the surface of the thermally conductive substrate 1 and at least partially covers the semiconductor heating layer 2. Specifically, the depth of the sink 11 is equal to the thickness of the conductive silicon wafer 21, so that the surface of the conductive silicon wafer 21 away from the bottom wall is flush with the surface of the thermally conductive substrate 1, so that the electrode 3 covers the thermally conductive substrate 1 and the conductive silicon wafer 21. Furthermore, a gap is defined between the side of the sink 11 and the side of the conductive silicon wafer 21. The gap is filled with a bonding material to secure the conductive silicon wafer 21 within the sink 11 and prevent the conductive silicon wafer 21 from falling off the thermally conductive substrate 1 during use.

[0051] See Figure 5 , Figure 5 for Figure 4 A cross-sectional view of the thermally conductive substrate along line BB in FIG. Furthermore, both ends of the sink 11 along the first direction Y may be open to facilitate the embedding of the conductive silicon wafer 21. The shape and size of the conductive silicon wafer 21 match those of the sink 11, ensuring a tight bond between the conductive silicon wafer 21 and the thermally conductive substrate 1.

[0052] Specifically, there are two electrodes 3, which are arranged on opposite sides of the atomizing surface along the second direction X; wherein, part of each electrode 3 is arranged on the surface of the thermally conductive substrate 1 to fix the electrode 3 on the thermally conductive substrate 1; the other part is arranged on the surface of the non-opening area of the conductive silicon wafer 21 to apply voltage to the conductive silicon wafer 21.

[0053] The first flow-through holes 4 are only provided in the sink 11 area to prevent the electrodes 3 from covering the first flow-through holes 4 .

[0054] like Figure 1 As shown, in a specific embodiment, the atomizer core may further include a liquid-conducting substrate 5; the liquid-conducting substrate 5 is provided on the surface of the heat-conducting substrate 1 away from the semiconductor heating layer 2, and the liquid-conducting substrate 5 has a plurality of second flow-conducting holes 51 that are connected to the plurality of first flow-conducting holes 4 in a one-to-one correspondence, and the second flow-conducting holes 51 are used to transfer the atomized matrix on the side of the liquid-conducting substrate 5 away from the heat-conducting substrate 1 to the first flow-conducting holes 4. In other words, the atomized matrix can be transferred from the side of the liquid-conducting substrate 5 away from the heat-conducting substrate 1 to the semiconductor heating layer 2 through the second flow-conducting holes 51 and the first flow-conducting holes 4 to achieve liquid supply and atomization of the atomized matrix. It can be understood that the liquid-conducting substrate 5 and the second flow-conducting holes 51 provided in the liquid-conducting substrate 5 can increase the liquid storage capacity of the atomizer core, which is beneficial to the atomization of the atomized matrix. Among them, the material of the liquid-conducting substrate 5 can be one of a glass substrate and a ceramic substrate.

[0055] Specifically, multiple second flow-conducting holes 51 are arranged in a two-dimensional array on the liquid-conducting substrate 5; the second flow-conducting holes 51 in adjacent rows or columns can also be staggered, and the second flow-conducting holes 51 can be coaxially arranged with the corresponding first flow-conducting holes 4 to facilitate opening holes in the thermal conductive substrate 1 and the liquid-conducting substrate 5.

[0056] In some embodiments, the thermally conductive substrate 1 may also be an intrinsic semiconductor substrate; specifically, a single-crystal silicon substrate. By locally doping the atomized surface of the intrinsic semiconductor substrate with conductive ions, a semiconductor heating layer 2 is formed on the atomized surface of the thermally conductive substrate 1. This allows the semiconductor heating layer 2 to be thinned to a thickness of 10 microns or less, further reducing the thickness of the atomizing core. The thickness of the semiconductor heating layer 2 is less than that of the intrinsic semiconductor.

[0057] See Figure 6 , Figure 6This is a partially enlarged top view of the atomizer core provided in the second embodiment of the present application; the structure of the atomizer core provided in the second embodiment of the present application is basically the same as the structure of the atomizer core provided in the first embodiment of the present application, with the difference that, in the second embodiment, each second flow guide hole 51 in the same row is arranged corresponding to the gap between two adjacent first flow guide holes 4 in the same row, and each second flow guide hole 51 in the same column is arranged corresponding to the gap between two adjacent first flow guide holes 4 in the same column; so that the bubbles generated by the semiconductor heating layer 2 heating the atomization matrix can be blocked on the bonding surface of the heat-conducting substrate 1 and the liquid-conducting substrate 5, preventing the bubbles from entering the second flow guide holes 51 and causing the second flow guide holes 51 to be blocked, thereby maintaining smooth and stable liquid supply, and effectively avoiding the occurrence of dry burning of the atomizer core.

[0058] Specifically, the projection of the second flow-conducting hole 51 along the stacking direction Z on the thermally conductive substrate 1 only partially overlaps with the projection of the corresponding first flow-conducting hole 4 along the stacking direction Z on the thermally conductive substrate 1, so as to reduce the overlapping area between the first flow-conducting hole 4 and the corresponding second flow-conducting hole 51, thereby preventing bubbles from directly entering the second flow-conducting hole 51 from the first flow-conducting hole 4.

[0059] Further, see Figure 7 , Figure 7 This is a partially enlarged top view of the atomizer core provided in the third embodiment of the present application; the structure of the atomizer core provided in the third embodiment of the present application is basically the same as the structure of the atomizer core provided in the second embodiment of the present application, with the difference that, in the third embodiment, a groove 12 is provided on the surface of the heat-conducting substrate 1 close to the liquid-conducting substrate 5 and / or a surface of the liquid-conducting substrate 5 close to the heat-conducting substrate 1; the plurality of first guide holes 4 are connected to the corresponding plurality of second guide holes 51 through the grooves 12, so that bubbles can be discharged from the atomizer core through the grooves 12, thereby preventing bubbles from gathering on the bonding surface of the heat-conducting substrate 1 and the liquid-conducting substrate 5 and clogging the liquid supply channel; thereby ensuring a stable liquid supply through hole and avoiding dry burning of the atomizer core.

[0060] Specifically, the groove 12 can be provided on the side of the thermally conductive substrate 1 facing the liquid-guiding substrate 5, extending from the side of the thermally conductive substrate 1 facing the liquid-guiding substrate 5 toward the semiconductor heat-generating layer 2; and extending along the second direction X to at least one side of the plurality of first flow-conducting holes 4. The thermally conductive substrate 1 can have multiple grooves 12 spaced apart along the first direction Y. Each groove 12 communicates with multiple rows of first flow-conducting holes 4 and corresponding multiple second flow-conducting holes 51, allowing bubbles within the multiple rows of first flow-conducting holes 4 to transfer into the corresponding groove 12. Preferably, the projection of the second flow-conducting holes 51 on the thermally conductive substrate 1 along the stacking direction Z and the projection of the corresponding first flow-conducting holes 4 on the thermally conductive substrate 1 along the stacking direction Z can completely not overlap.

[0061] The present application provides an atomizer core, which includes a heat-conducting substrate 1, a semiconductor heating layer 2 and an electrode 3. The semiconductor heating layer 2 is arranged on a surface of the heat-conducting substrate 1; the electrode 3 is arranged on the surface of the heat-conducting substrate 1 on which the semiconductor heating layer 2 is provided, and is electrically connected to the semiconductor heating layer 2; the atomizer core has a plurality of first conduction holes 4 that penetrate the heat-conducting substrate 1 and the semiconductor heating layer 2; the plurality of first conduction holes 4 are arranged in a two-dimensional array, and the first conduction holes 4 in adjacent rows or adjacent columns are staggered. By staggering the first conduction holes 4 in the atomizer core to reduce the distance between two adjacent first conduction holes 4, the atomizer core can open more first conduction holes 4 under the same size, so as to improve the opening rate of the atomizer core, thereby improving the utilization efficiency of the heating surface, and further effectively improving the atomization efficiency of the atomizer core.

[0062] See also Figure 8 , Figure 8 1 is a schematic diagram of the structure of an atomizer provided in one embodiment of the present application. The present application provides an atomizer 100. The atomizer 100 includes a liquid storage chamber 20 and the atomizer core 10 described above.

[0063] The liquid storage chamber 20 is used to store the atomized matrix and is in communication with the atomizer core 10. The liquid storage chamber 20 is in communication with the first guide hole 4.

[0064] In this embodiment, the atomizer core 10 is disposed below the liquid storage chamber 20 and is horizontally placed.

[0065] The atomizer core 10 may also be placed vertically or tilted. For example, the atomizer core 10 may be placed at a certain angle to the horizontal plane, or at a certain angle to the circumference of the atomizer 100. That is, the present application does not limit the placement angle of the atomizer core 10.

[0066] In other embodiments, the atomizer core 10 may be disposed on the side of the liquid storage chamber 20, or may be partially embedded in the liquid storage chamber 20. That is, the atomizer core 10 and the liquid storage chamber 20 may also be disposed in other ways, which are not limited here and may be selected according to actual assembly requirements.

[0067] See also Figure 9 , Figure 9 Schematic diagram of the structure of an electronic atomization device provided in one embodiment of the present application. The present application provides an electronic atomization device. The electronic atomization device includes a battery assembly 200 and the aforementioned atomizer 100. The battery assembly 200 is used to power the atomizer 100 to operate the atomizer 100. The battery assembly 200 is electrically connected to the electrode so that a path is formed between the electrode and the semiconductor heating layer, allowing the semiconductor heating layer to act as a resistor to generate Joule heat.

[0068] The electronic atomization device may also include a housing, a nozzle, a microphone and other structures, which will not be described in detail here. The detailed structural features of the electronic atomization device are within the scope of understanding of those skilled in the art and will not be repeated here. The structure of the electronic atomization device can be of various structures and forms. As long as it utilizes the atomization core structure in the embodiment of the present application, it should be included in the scope of protection of this application.

[0069] The above description is only an implementation method of the present application and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the description and drawings of this application, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. An atomizer core, characterized in that: include: Thermally conductive substrate; A semiconductor heating layer is provided on a surface of the thermally conductive substrate; an electrode, disposed on the surface of the thermally conductive substrate on which the semiconductor heating layer is disposed, and electrically connected to the semiconductor heating layer; The atomizing core has a plurality of first conduction holes penetrating the heat-conducting substrate and the semiconductor heating layer; the plurality of first conduction holes are arranged in a two-dimensional array, and the first conduction holes in adjacent rows or adjacent columns are staggered.

2. The atomizer core according to claim 1, characterized in that The pore size of the first flow-conducting hole is greater than or equal to 10 microns and less than or equal to 50 microns; The distance between two adjacent first flow-conducting holes is greater than or equal to 10 micrometers and less than or equal to 50 micrometers.

3. The atomizer core according to claim 2, characterized in that The first flow-conducting holes are circular holes or regular polygonal holes, and the distance between two adjacent first flow-conducting holes is smaller than the aperture of the first flow-conducting holes.

4. The atomizer core according to claim 1, characterized in that The semiconductor heating layer is a conductive silicon wafer, and the first conduction hole passes through the conductive silicon wafer.

5. The atomizer core according to claim 4, characterized in that: The surface of the semiconductor heating layer is flush with the surface of the thermally conductive substrate. The electrode is formed on the surface of the thermally conductive substrate and at least partially covers the semiconductor heating layer.

6. The atomizer core according to claim 1, characterized in that The heat-conducting substrate is an intrinsic semiconductor substrate; local doping is performed on the atomized surface of the intrinsic semiconductor substrate to form the semiconductor heating layer; and the thickness of the semiconductor heating layer is smaller than that of the intrinsic semiconductor.

7. The atomizer core according to claim 1, characterized in that Also includes: a liquid conducting substrate, disposed on a surface of the heat conducting substrate away from the semiconductor heating layer, and having a plurality of second conducting holes arranged in a two-dimensional array; The second flow-conducting holes in adjacent rows or columns are also staggered, with each second flow-conducting hole in the same row corresponding to the gap between two adjacent first flow-conducting holes in the same row, and each second flow-conducting hole in the same column corresponding to the gap between two adjacent first flow-conducting holes in the same column. A surface of the heat-conducting substrate close to the liquid-conducting substrate and / or a surface of the liquid-conducting substrate close to the heat-conducting substrate is provided with a groove; the plurality of first flow-conducting holes are connected with the plurality of second flow-conducting holes through the groove.

8. The atomizer core according to claim 7, characterized in that: The thermally conductive substrate is a silicon substrate; and / or, The liquid-conducting substrate is a glass substrate or a ceramic substrate.

9. An atomizer, characterized in that: comprising a liquid storage chamber and an atomizing core according to any one of claims 1 to 8; The liquid storage chamber is used to store the atomization matrix and is communicated with the atomization core.

10. An electronic atomization device, characterized in that: Comprising the atomizer as claimed in claim 9.

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