Gate structure of semiconductor plastic package mold

Abstract

The embodiment of the utility model provides a pouring gate structure of a semiconductor plastic package mold, the pouring gate structure comprises an upper mold pouring gate and a lower mold pouring gate, one side, facing the lower mold pouring gate, of the upper mold pouring gate is provided with a first accommodating groove, and the first accommodating groove is provided with a top wall, a bottom wall and a side wall, the cross section size of the top wall of the first containing groove is smaller than that of the bottom wall of the first containing groove. By arranging the first containing groove, the size of the upper mold pouring gate colloid is increased, the contact area of a plastic package material and the frame is increased, the combinability of the plastic package material and the frame is improved, the parting surface linear distance is increased, the pouring gate colloid breakage risk is reduced, and the injection molding reliability is improved.

Description

Technical Field

[0001] The disclosed embodiments belong to the technical field of semiconductor plastic packaging molds, and particularly relate to a gate structure of a semiconductor plastic packaging mold. Background Art

[0002] The semiconductor packaging process includes three steps: injection molding - curing - separation. If the mold gate is blocked, the product will not be fully filled during the injection molding process, and the local frame will be deformed due to excessive force. In the semiconductor packaging process, the packaging process uses different molds to perform packaging operations on the corresponding products. Figure 1 As shown, the plastic encapsulation mold used in existing DUB products has a triangular cross-section of the groove of the upper mold gate 1 and a single-sided demolding angle of only 10°. This reduces the contact area between the plastic encapsulation compound and the frame, increases the risk of gate colloid fracture, and reduces product reliability. Furthermore, the groove depth of the lower mold gate 2 is relatively small, and the frame reinforcement ribs within the gate block the resin's fluidity, resulting in an unfilled product. Furthermore, the matte finish of the upper mold gate 1 and lower mold gate 2 affects the release of the resin from the mold cavity. In short, improper mold gate design dimensions and processing techniques can result in unfilled products and frame deformation.

[0003] In view of the above problems, it is necessary to propose a gate structure of a semiconductor plastic packaging mold that is reasonably designed and can effectively improve the above problems. Utility Model Content

[0004] The embodiments of the present disclosure aim to solve at least one of the technical problems existing in the prior art and provide a gate structure for a semiconductor plastic packaging mold.

[0005] The present disclosure provides a gate structure of a semiconductor plastic encapsulation mold, comprising an upper mold gate and a lower mold gate, wherein a first receiving groove is provided on a side of the upper mold gate facing the lower mold gate, and the first receiving groove has a top wall, a bottom wall and side walls; wherein,

[0006] The cross-sectional dimension of the top wall of the first accommodating groove is smaller than the cross-sectional dimension of the bottom wall of the first accommodating groove.

[0007] Optionally, the cross-sectional dimension of the first accommodating groove increases sequentially from the top wall thereof to the bottom wall thereof.

[0008] Optionally, the cross-section of the first accommodating groove is trapezoidal.

[0009] Optionally, a preset angle is formed between the side wall of the first receiving groove and the bottom wall thereof, wherein the preset angle ranges from 25° to 35°.

[0010] Optionally, a second accommodating groove is provided on a side of the lower mold gate facing the upper mold gate, and the second accommodating groove has a preset depth.

[0011] Optionally, the preset depth range of the second receiving groove is 0.2 mm ± 0.01 mm.

[0012] Optionally, the second receiving groove has a bottom wall, a top wall and side walls; wherein the cross-sectional dimension of the top wall of the second receiving groove is greater than the cross-sectional dimension of the bottom wall thereof.

[0013] Optionally, the cross-sectional dimensions of the second accommodating groove decrease sequentially from the top wall to the bottom wall.

[0014] Optionally, the cross-section of the second accommodating groove is formed in an inverted trapezoidal shape.

[0015] Optionally, the surface roughness of the upper mold gate and the lower mold gate ranges from 0.1 μm to 0.3 μm.

[0016] The gate structure of a semiconductor plastic encapsulation mold according to the disclosed embodiment includes an upper mold gate and a lower mold gate. A first receiving groove is provided on the side of the upper mold gate facing the lower mold gate. The first receiving groove has a top wall, a bottom wall, and side walls, wherein the cross-sectional dimension of the top wall of the first receiving groove is smaller than the cross-sectional dimension of the bottom wall of the first receiving groove. The provision of the first receiving groove increases the volume of the upper mold gate colloid, increases the contact area between the plastic encapsulation material and the frame, improves the bonding between the two, increases the linear distance between the parting surface, reduces the risk of gate colloid fracture, and improves the reliability of injection molding. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is a schematic diagram of the structure of the upper mold gate and the lower mold gate in the plastic packaging mold used for DUB products in the prior art;

[0018] Figure 2 This is a structural schematic diagram of a gate structure of a semiconductor plastic packaging mold according to one embodiment of the present disclosure. DETAILED DESCRIPTION

[0019] In order to enable those skilled in the art to better understand the technical solutions of the embodiments of the present disclosure, the embodiments of the present disclosure are further described in detail below with reference to the accompanying drawings and specific implementation methods.

[0020] like Figure 2 As shown, an embodiment of the present disclosure provides a gate structure 100 of a semiconductor plastic encapsulation mold, comprising an upper mold gate 110 and a lower mold gate 120, wherein a first receiving groove 111 is provided on the side of the upper mold gate 110 facing the lower mold gate 120, and the first receiving groove 111 has a top wall, a bottom wall and side walls, wherein the cross-sectional dimension of the top wall of the first receiving groove 111 is smaller than the cross-sectional dimension of the bottom wall of the first receiving groove 111.

[0021] Specifically, in this embodiment, the bottom wall length of the first receiving groove 111 is 2 mm, and the bottom wall width of the first receiving groove 111 is 1.1 mm. The dimensions of the first receiving groove 111 are not specifically limited in this embodiment and can be limited according to actual needs.

[0022] It should be noted that the gate structure 100 of the semiconductor plastic packaging mold according to the embodiment of the present disclosure is applied to the plastic packaging mold used for DUB products.

[0023] The gate structure of the semiconductor plastic encapsulation mold of the embodiment of the present invention is provided with a first accommodating groove, and the first accommodating groove has a top wall, a bottom wall and a side wall. The cross-sectional dimension of the top wall of the first accommodating groove is smaller than the cross-sectional dimension of the bottom wall of the first accommodating groove. By providing the first accommodating groove, the volume of the upper mold gate colloid is increased, the contact area between the plastic encapsulation material and the frame is increased, the bonding between the two is improved, the straight-line distance of the parting surface is increased, the risk of gate colloid breakage is reduced, and the reliability of injection molding is increased.

[0024] For example, Figure 2 As shown, the cross-sectional dimensions of the first receiving groove 111 increase from the top wall to the bottom wall. Specifically, in this embodiment, the sidewalls of the first receiving groove 111 are inclined planes.

[0025] Preferably, Figure 2 As shown, the cross-section of the first receiving groove 111 is trapezoidal. The first receiving groove 111 with a trapezoidal cross-section increases the straight line distance of the parting surface of the upper mold gate 110 from the existing 0.175mm to 0.333mm, reducing the risk of colloid fracture in the upper mold gate 110.

[0026] In this embodiment, the first receiving groove 111 with a trapezoidal cross section increases the volume of the upper mold gate colloid, increases the bonding area between the molding compound and the frame, and improves the bonding force between the molding compound and the frame.

[0027] Exemplarily, a preset angle is formed between the sidewall of the first receiving groove 111 and its bottom wall, wherein the preset angle ranges from 25° to 35°. In this embodiment, the preset angle is also the single-sided demolding angle. Preferably, in this embodiment, the preset angle is 30°.

[0028] In this embodiment, by increasing the preset angle between the side wall of the first receiving groove and its bottom wall, the separation effect after curing is improved, and the abnormal occurrence of gate fracture remaining in the mold due to poor demolding effect can be avoided.

[0029] For example, Figure 2 As shown, a second receiving groove 121 is provided on a side of the lower mold gate 120 facing the upper mold gate 110 , and the second receiving groove 121 has a preset depth.

[0030] In this embodiment, a second receiving groove is provided in the lower mold gate to increase the volume of the lower mold gate colloid, thereby increasing the contact area between the molding compound and the frame, and improving the bonding between the two. The second receiving groove has a predetermined depth, which prevents the frame reinforcement ribs from obstructing the resin flow in the lower mold gate, allowing the filler to better fill the mold.

[0031] Specifically, in this embodiment, the preset depth range of the second receiving groove 121 is 0.2mm±0.01mm. Compared with the prior art, the depth of the second receiving groove 121 is increased by about two times, which can better avoid the frame reinforcement ribs from blocking the resin fluidity in the lower mold gate 120.

[0032] For example, Figure 2 As shown, the second receiving groove 121 has a bottom wall, a top wall and side walls; wherein the cross-sectional dimension of the top wall of the second receiving groove 121 is larger than the cross-sectional dimension of the bottom wall thereof.

[0033] Specifically, the cross-sectional dimensions of the second receiving groove 121 increase from the top wall to the bottom wall thereof. In this embodiment, the sidewalls of the second receiving groove 121 are in the shape of an inclined plane.

[0034] Preferably, in this embodiment, the cross section of the second receiving groove 121 is formed in an inverted trapezoidal shape. The second receiving groove 121 with an inverted trapezoidal cross section increases the straight line distance of the parting surface of the lower mold gate 120, reducing the risk of colloid fracture of the lower mold gate 120.

[0035] For example, the surface roughness of the upper mold gate 110 and the lower mold gate 120 ranges from 0.1 μm to 0.3 μm. In other words, the surfaces of the upper mold gate 110 and the lower mold gate 120 are designed to be smooth.

[0036] In this embodiment, the surfaces of the upper mold gate and the lower mold gate are designed to be smooth, which can improve the demolding properties of the resin and the mold cavity.

[0037] It is understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the embodiments of the present disclosure, but the embodiments of the present disclosure are not limited thereto. Those skilled in the art may make various modifications and improvements without departing from the spirit and essence of the embodiments of the present disclosure, and such modifications and improvements are also considered to be within the scope of protection of the embodiments of the present disclosure.

Claims

1. A gate structure of a semiconductor plastic encapsulation mold, comprising an upper mold gate and a lower mold gate, characterized in that: A first receiving groove is provided on one side of the upper mold gate facing the lower mold gate, and the first receiving groove has a top wall, a bottom wall and a side wall; wherein, The cross-sectional dimension of the top wall of the first accommodating groove is smaller than the cross-sectional dimension of the bottom wall of the first accommodating groove.

2. The gate structure according to claim 1, characterized in that: The cross-sectional dimensions of the first accommodating groove increase sequentially from the top wall thereof to the bottom wall thereof.

3. The gate structure according to claim 2, characterized in that: The cross-section of the first accommodating groove is trapezoidal.

4. The gate structure according to any one of claims 1 to 3, characterized in that: A preset angle is defined between the side wall and the bottom wall of the first receiving groove, wherein the preset angle is in a range of 25° to 35°.

5. The gate structure according to any one of claims 1 to 3, characterized in that: A second accommodating groove is provided on a side of the lower mold gate facing the upper mold gate, and the second accommodating groove has a preset depth.

6. The gate structure according to claim 5, characterized in that: The preset depth range of the second receiving groove is 0.2 mm ± 0.01 mm.

7. The gate structure according to claim 5, characterized in that: The second receiving groove has a bottom wall, a top wall and side walls; wherein the cross-sectional dimension of the top wall of the second receiving groove is larger than the cross-sectional dimension of the bottom wall thereof.

8. The gate structure according to claim 7, characterized in that: The cross-sectional dimensions of the second receiving groove increase sequentially from the top wall to the bottom wall.

9. The gate structure according to claim 8, characterized in that: The cross section of the second receiving groove is formed in an inverted trapezoidal shape.

10. The gate structure according to any one of claims 1 to 3, characterized in that: The surface roughness of the upper mold gate and the lower mold gate ranges from 0.1 μm to 0.3 μm.

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