Aluminum-based copper-clad plate and IGBT module

Abstract

The utility model relates to the technical field of packaging carrier plates, in particular to an aluminum-based copper-clad plate and an IGBT (Insulated Gate Bipolar Translator) module. Comprising an aluminum plate, an oxidation film layer, a silicon carbide layer, a nickel-copper alloy layer and a first copper layer, the oxidation film layers are formed on the two sides of the aluminum plate, the silicon carbide layers are formed on the oxidation film layers on the two sides of the aluminum plate, the nickel-copper alloy layers are formed on the silicon carbide layers on the two sides of the aluminum plate, and the first copper layers are formed on the nickel-copper alloy layers on the two sides of the aluminum plate. According to the aluminum-based copper-clad plate, the thermal conductivity can be greatly improved, and the surface of the aluminum-based copper-clad plate is small in thermal expansion coefficient, good in thermal expansion performance and better in thermal stability; and the adhesive force between the layers of the aluminum-based copper-clad plate is better, and the surface insulativity and the high voltage resistance are excellent.

Description

Technical Field

[0001] The utility model relates to the technical field of package carrier boards, in particular to an aluminum-based copper-clad board and an IGBT module. Background Art

[0002] The demand for high-power semiconductor packaging applications is increasing with the demand for new energy sources. The market demand for ceramic substrates with high temperature resistance and good insulation performance as packaging substrates is also increasing. For example, they are used as packaging substrates in high-power device IGBT (Insulated Gate Bipolar Transistor) modules.

[0003] Ceramic substrates used as packaging substrates have poor thermal conductivity, and the etching circuits are difficult to etch because titanium metal is used as a transition layer between copper and ceramic. Utility Model Content

[0004] The embodiments of the present invention provide an aluminum-based copper-clad laminate and an IGBT module to solve the problem in the prior art that a ceramic substrate used as a packaging substrate has poor thermal conductivity and etching circuits are difficult due to the use of titanium metal as a transition layer between copper and ceramic.

[0005] The utility model discloses an aluminum-based copper-clad plate, comprising an aluminum plate, an oxide film layer, a silicon carbide layer, a nickel-copper alloy layer and a first copper layer; the oxide film layer is formed on both sides of the aluminum plate, the silicon carbide layer is formed on the oxide film layers on both sides of the aluminum plate, the nickel-copper alloy layer is formed on the silicon carbide layer on one side of the aluminum plate, and the first copper layer is formed on the nickel-copper alloy layer.

[0006] Optionally, the thickness of the oxide film layer is 12um to 25um.

[0007] Optionally, the thickness of the silicon carbide layer is 500 nm to 5000 nm.

[0008] Optionally, the nickel-copper alloy layer has a thickness of 70 nm to 100 nm.

[0009] Optionally, the thickness of the first copper layer is 0.2 mm to 0.5 mm.

[0010] Optionally, the aluminum plate is a pure aluminum plate or an aluminum alloy plate.

[0011] The utility model also discloses an IGBT module, comprising the above-mentioned aluminum-based copper-clad plate; the aluminum-based copper-clad plate is used as a packaging carrier plate of the IGBT module.

[0012] Optionally, the IGBT module also includes a housing, an IGBT chip, and a busbar terminal; the IGBT chip is fixed on the first copper layer of the aluminum-based copper-clad laminate, and the housing is fixed on the aluminum-based copper-clad laminate and covers the IGBT chip; the IGBT chip is electrically connected to the busbar terminal, and is electrically connected to the outside of the housing through the busbar terminal.

[0013] Optionally, a second copper layer and a first solder layer are provided between the IGBT chip and the first copper layer, the second copper layer is fixed on the first copper layer, the first solder layer is fixed on the second copper layer, and the IGBT chip is fixed on the first solder layer.

[0014] Optionally, the IGBT module further includes a heat sink, which is fixed on a side of the aluminum-based copper-clad laminate facing away from the housing.

[0015] Compared with the prior art, the beneficial effects of the aluminum-based copper-clad laminate provided by the embodiment of the present invention are: the aluminum-based copper-clad laminate of the present invention can greatly improve the thermal conductivity, and the thermal expansion coefficient of the surface of the aluminum-based copper-clad laminate is small, the thermal expansion performance is good, and it has better thermal stability; and the adhesion between the layers of the aluminum-based copper-clad laminate is better, and the surface insulation and high voltage resistance are excellent. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The technical solution of the present invention will be further described in detail below with reference to the accompanying drawings and embodiments, in which:

[0017] Figure 1 It is a schematic diagram of the traditional IGBT module packaging structure;

[0018] Figure 2 Schematic diagram of an IGBT module according to an embodiment of the present invention;

[0019] Figure 3 It is a schematic diagram of an aluminum-based copper-clad laminate according to an embodiment of the present invention.

[0020] The reference numerals in the figures are:

[0021] 1. Housing; 2. IGBT chip; 3. Aluminum-based copper-clad laminate; 31. Aluminum plate; 32. Oxide film layer; 33. Silicon carbide layer; 34. Nickel-copper alloy layer; 35. First copper layer; 4. Second copper layer; 5. First solder layer; 6. Heat sink; 61. Heat sink fins; 7. Fasteners; 8. Thermal conductive silicone; 9. Silicone material; 10. Epoxy resin; 20. Metal bonding wire; 30. Busbar terminal; 40. Copper layer; 50. Solder layer; 60. Ceramic substrate; 70. Copper thermal block. DETAILED DESCRIPTION

[0022] It should be noted that, in the absence of conflict, the embodiments and features of the embodiments in this application can be combined with each other. Now, in conjunction with the accompanying drawings, a detailed description of the preferred embodiments of the present utility model will be given.

[0023] The present invention provides a method for preparing an aluminum-based copper-clad laminate 3. Figure 3 As shown, the method for preparing the aluminum-based copper-clad laminate 3 includes the following steps:

[0024] S100: Use acid solution to clean the surface oxides on both sides of the aluminum plate;

[0025] S200: Corona treatment of both sides of the aluminum plate after cleaning with an acid solution to form an oxide film layer on both sides of the aluminum plate;

[0026] S300: A silicon carbide layer is plated on the oxide film layer on both sides of the aluminum plate;

[0027] S400: A nickel-copper alloy layer is plated on the silicon carbide layer on one side;

[0028] S500: Plating a first copper layer on the nickel-copper alloy layer to obtain an aluminum-based copper-clad laminate.

[0029] The aluminum-based copper-clad laminate 3 prepared by the preparation method of the present invention can greatly improve thermal conductivity, and the surface coefficient of thermal expansion (CTE) of the aluminum-based copper-clad laminate 3 is small, the thermal expansion performance is good, and the thermal stability is better; in addition, the adhesion between the layers of the aluminum-based copper-clad laminate 3 is better, and the surface insulation and high voltage resistance performance are excellent.

[0030] Specifically, in the aluminum-based copper-clad laminate 3 of the present invention, the thermal conductivity of the silicon carbide layer 33 can reach up to 400W / mK, which increases the infrared emissivity of the aluminum-based copper-clad laminate 3 and improves the overall heat dissipation effect of the aluminum-based copper-clad laminate 3. Therefore, plating the silicon carbide layer 33 on the aluminum plate 31 can improve the thermal conductivity of the aluminum-based copper-clad laminate 3; the CTE value of the aluminum plate 31 itself is very large, 26 times that of ceramics, and plating the silicon carbide layer 33 on the aluminum plate 31 can reduce the CTE value.

[0031] The aluminum sheet 31 itself has a relatively soft structure and low structural strength, making it difficult to securely bond with the silicon carbide layer 33. Consequently, delamination between the silicon carbide layer 33 and the aluminum sheet 31 is easy. The oxide film 32 improves the adhesion between the silicon carbide layer 33 and the aluminum sheet 31, enhancing the adhesion of the silicon carbide layer 33 and increasing the silicon carbide content in the layer 33. The aluminum sheet 31 itself is not insulating. The present invention first forms the oxide film 32 on the surface of the aluminum sheet 31 and then coats the silicon carbide layer 33, thereby improving the insulation properties of the aluminum-based copper-clad laminate 3. Specifically, the silicon carbide layer 33 enhances the surface hardness and impact resistance of the aluminum sheet 31, while also providing insulation.

[0032] The nickel-copper alloy layer 34 is used as a transition layer between the silicon carbide layer 33 and the first copper layer 35 to solve the problem that pure copper is too soft to form good adhesion with the silicon carbide layer 33, and at the same time solve the problem that the etching circuit between the copper and ceramic in the ceramic substrate 60 is difficult to etch due to the use of titanium metal as a transition layer.

[0033] Therefore, the aluminum-based copper-clad laminate 3 of the present invention addresses insulation and voltage resistance issues by treating the aluminum plate 31 to form an oxide film 32 and then coating it with a silicon carbide layer 33. After treatment, the voltage resistance reaches over 2000 volts. Further coating with the silicon carbide layer 33 increases the voltage resistance to over 7000 volts. The thermal conductivity of the aluminum-based copper-clad laminate 3 can reach 280 W / mK, over eight times that of existing alumina ceramic substrates 60.

[0034] Specifically, the aluminum plate 31 can be a pure aluminum plate 31 or an aluminum alloy plate. When the aluminum-based copper-clad laminate 3 is used as a package substrate, the first copper layer 35 acts as a conductor. The aluminum-based copper-clad laminate 3 of the present invention can be used to replace the existing ceramic substrate 60 and can also be used in products requiring high thermal conductivity and heat dissipation.

[0035] Specifically, the step of using an acid solution to clean the surface oxides of the aluminum plate is as follows: using dilute sulfuric acid with a concentration of 2% to 5% to clean the surface oxides of the aluminum plate. Aluminum easily reacts with oxygen in air to form aluminum oxide, forming a layer of oxide. Using dilute sulfuric acid can effectively remove these oxides, ensuring a clean surface of the aluminum plate 31 and providing a good substrate for subsequent corona treatment and coating. During the pickling process, dilute sulfuric acid not only removes oxides but may also cause micro-etching of the aluminum surface, increasing surface roughness. This roughness helps improve the adhesion of the subsequent coating to the aluminum substrate. Using dilute sulfuric acid with a concentration of 2% to 5% can effectively remove oxides while avoiding the excessive corrosion and increased costs that may be caused by excessively high concentrations. Specifically, the concentration of dilute sulfuric acid can be any of 2%, 2.5%, 3%, 3.5%, 4%, 4.5%, and 5%.

[0036] The specific step of forming an oxide film layer on the surface of the aluminum sheet after cleaning with a corona acid solution is as follows: forming an oxide film layer with a thickness of 12um to 25um on the surface of the aluminum sheet after cleaning with a corona acid solution. The oxide film layer 32 acts as a medium between the aluminum sheet 31 and the subsequent coating, and its presence significantly improves the adhesion between the layers. The thickness of the oxide film layer 32 is between 12um and 25um, providing sufficient mechanical anchor points for the coating, helping to improve the stability of the overall structure. Aluminum has a large coefficient of thermal expansion (CTE), while alumina has a relatively small CTE. By forming an oxide film layer 32 of a certain thickness, the CTE of the aluminum-based copper-clad laminate 3 can be reduced to a certain extent, improving its thermal stability. Although the thermal conductivity of alumina is lower than that of metals such as copper, by controlling the thickness of the oxide film layer 32, while maintaining good insulation properties, the overall thermal conductivity can be improved by the subsequent high thermal conductivity materials such as the silicon carbide layer 33. The oxide film layer 32 has a thickness range of 12 μm to 25 μm, providing flexibility. The thickness of the oxide film layer 32 can be adjusted to achieve an optimal performance balance based on different application needs and performance requirements. Specifically, the thickness of the oxide film layer 32 can be any of 12 μm, 14 μm, 16 μm, 18 μm, 20 μm, 22 μm, and 24 μm.

[0037] Specifically, in step S200, the aluminum plate cleaned with the acid solution is subjected to electrode bombardment on the surface of the aluminum plate using a corona device to form an oxide film layer with a thickness of 12 μm to 25 μm.

[0038] In step S300, a magnetron physical vapor deposition (PVD) device is used, with a target material of 99.9% pure silicon carbide, to deposit a 500nm to 5000nm thick silicon carbide layer on the oxide film. Specifically, the thickness of the silicon carbide layer 33 can be any of 500nm, 550nm, 600nm, 650nm, 700nm, 750nm, 800nm, 850nm, 900nm, 950nm, and 1000nm.

[0039] In step S400, after the aluminum plate is coated with the silicon carbide layer, it is transferred to another PVD device. The target material is a nickel-copper alloy (alloy ratio of nickel:copper = 7:3). A nickel-copper alloy layer with a thickness of 70nm to 100nm is plated on the silicon carbide layer. Specifically, the thickness of the nickel-copper alloy layer 34 can be any one of 70nm, 75nm, 80nm, 85nm, 90nm, 95nm, and 100nm.

[0040] Specifically, step S500 of plating the first copper layer on the nickel-copper alloy is as follows: sputtering a first copper layer with a thickness of 1000nm to 2000nm on the nickel-copper alloy, and then electroplating the first copper layer with a thickness of 1000nm to 2000nm to a thickness of 0.2mm to 0.5mm. Sputtering is a physical vapor deposition technology that can form a uniform thin film. Sputtering is costly and inefficient, while electroplating can further increase the thickness of the first copper layer 35 to ensure the uniformity and integrity of the first copper layer 35. The bonding force between the sputtered first copper layer 35 and the nickel-copper alloy layer 34 is strong, while electroplating the first copper layer 35 can further enhance the bonding force and improve the stability of the overall structure. By combining sputtering and electroplating, it is possible to optimize material usage and production costs while ensuring performance. Therefore, in this solution, a first copper layer 35 with a thickness of 1000 nm to 2000 nm is sputtered, and then the first copper layer 35 with a thickness of 1000 nm to 2000 nm is electroplated to a thickness of 0.2 mm to 0.5 mm, so as to improve efficiency and reduce cost.

[0041] Specifically, the thickness of the sputtered first copper layer 35 can be any one of 1000nm, 1100nm, 1200nm, 1300nm, 1400nm, 1500nm, 1600nm, 1700nm, 1800nm, 1900nm, and 2000nm. Specifically, a first copper layer 35 with a thickness of 1000nm to 2000nm is sputtered on a nickel-copper alloy by vacuum nano-plating technology, and then the first copper layer 35 with a thickness of 1000nm to 2000nm is electroplated to a thickness of 0.2mm to 0.5mm by a vertical copper plating line (VCP). Vacuum nano-plating is a surface treatment technology that deposits materials (such as copper) on a substrate material in the form of nano-scale particles under a vacuum environment. Vertical copper plating line is an electroplating device used in the manufacture of electronic packaging materials, which allows the material to be suspended vertically in an electroplating tank and deposits the first copper layer 35 on the surface of the material by electroplating. VCP technology can provide a uniform coating and can control the thickness of the coating.

[0042] Furthermore, after the step of plating the first copper layer 35 on the nickel-copper alloy layer 34 , the first copper layer 35 is subjected to an anti-oxidation treatment, ie, a corona treatment.

[0043] like Figure 3 As shown, the utility model also discloses an aluminum-based copper-clad laminate 3, comprising an aluminum plate 31, an oxide film layer 32, a silicon carbide layer 33, a nickel-copper alloy layer 34 and a first copper layer 35; the oxide film layer 32 is formed on both sides of the aluminum plate 31, the silicon carbide layer 33 is formed on the oxide film layer 32 on both sides of the aluminum plate 31, the nickel-copper alloy layer 34 is formed on the silicon carbide layer 33 on one side of the aluminum plate 31, and the first copper layer 35 is formed on the nickel-copper alloy layer 34.

[0044] The aluminum-based copper-clad laminate 3 of the present invention can greatly improve thermal conductivity, and the surface coefficient of thermal expansion (CTE) of the aluminum-based copper-clad laminate 3 is small, the thermal expansion performance is good, and it has better thermal stability; in addition, the adhesion between the layers of the aluminum-based copper-clad laminate 3 is better, and the surface insulation and high voltage resistance performance are excellent.

[0045] Specifically, in the aluminum-based copper-clad laminate 3 of the present invention, the thermal conductivity of the silicon carbide layer 33 can reach up to 400W / mK, which increases the infrared emissivity of the aluminum-based copper-clad laminate 3 and improves the overall heat dissipation effect of the aluminum-based copper-clad laminate 3. Therefore, plating the silicon carbide layer 33 on the aluminum plate 31 can improve the thermal conductivity of the aluminum-based copper-clad laminate 3; the CTE value of the aluminum plate 31 itself is very large, 26 times that of ceramics, and plating the silicon carbide layer 33 on the aluminum plate 31 can reduce the CTE value.

[0046] The aluminum sheet 31 itself has a relatively soft structure and low structural strength, making it difficult to securely bond with the silicon carbide layer 33. Consequently, delamination between the silicon carbide layer 33 and the aluminum sheet 31 is easy. The oxide film 32 improves the adhesion between the silicon carbide layer 33 and the aluminum sheet 31, enhancing the adhesion of the silicon carbide layer 33 and increasing the silicon carbide content in the layer 33. The aluminum sheet 31 itself is not insulating. The present invention first forms the oxide film 32 on the surface of the aluminum sheet 31 and then coats the silicon carbide layer 33, thereby improving the insulation properties of the aluminum-based copper-clad laminate 3. Specifically, the silicon carbide layer 33 enhances the surface hardness and impact resistance of the aluminum sheet 31, while also providing insulation.

[0047] The nickel-copper alloy layer 34 is used as a transition layer between the silicon carbide layer 33 and the first copper layer 35 to solve the problem that pure copper is too soft to form good adhesion with the silicon carbide layer 33, and at the same time solve the problem that the etching circuit between the copper and ceramic in the ceramic substrate 60 is difficult to etch due to the use of titanium metal as a transition layer.

[0048] Therefore, the aluminum-based copper-clad laminate 3 of the present invention addresses insulation and voltage resistance issues by treating the aluminum plate 31 to form an oxide film 32 and then coating it with a silicon carbide layer 33. After treatment, the voltage resistance reaches over 2000 volts. Further coating with the silicon carbide layer 33 increases the voltage resistance to over 7000 volts. The thermal conductivity of the aluminum-based copper-clad laminate 3 can reach 280 W / mK, over eight times that of existing alumina ceramic substrates 60.

[0049] Specifically, the thickness of the oxide film layer 32 is 12um to 25um. In this solution, the thickness of the oxide film layer 32 is between 12um and 25um, which provides sufficient mechanical anchoring points for the coating and helps to improve the stability of the overall structure. The coefficient of thermal expansion (CTE) of aluminum is large, while the CTE of aluminum oxide is relatively small. By forming an oxide film layer 32 of a certain thickness, the CTE of the aluminum-based copper clad laminate 3 can be reduced to a certain extent, thereby improving its thermal stability. Specifically, the thickness of the oxide film layer 32 can be any one of 12um, 14um, 16um, 18um, 20um, 22um, and 24um.

[0050] Specifically, the thickness of the silicon carbide layer 33 is 500nm to 5000nm. In this solution, the silicon carbide layer 33 has a high thermal conductivity. This thickness range can ensure that the aluminum-based copper clad laminate 3 has good heat dissipation performance, which helps to quickly transfer heat from the heating element and dissipate it outward. The thermal expansion coefficient of the silicon carbide layer 33 is lower than that of aluminum. By controlling the thickness of the silicon carbide layer 33, the overall thermal expansion of the aluminum-based copper clad laminate 3 can be adjusted to a certain extent to match the thermal expansion characteristics of other electronic components when it is used. Specifically, the thickness of the silicon carbide layer 33 can be any one of 500nm, 550nm, 600nm, 650nm, 700nm, 750nm, 800nm, 850nm, 900nm, 950nm, 1000nm, 1500nm, 2000nm, 2500nm, 3000nm, 4000nm, and 5000nm.

[0051] Specifically, the thickness of the nickel-copper alloy layer 34 is 70nm to 100nm. In this embodiment, the nickel-copper alloy layer 34 serves as an intermediate transition layer. Its appropriate thickness helps to improve the bonding strength between the silicon carbide layer 33 and the first copper layer 35, thereby enhancing the stability of the overall structure. By controlling the thickness of the nickel-copper alloy layer 34, the thermal expansion coefficient of the entire aluminum-based copper-clad laminate 3 can be further adjusted to adapt to different application environments. Specifically, the thickness of the nickel-copper alloy layer 34 can be any one of 70nm, 75nm, 80nm, 85nm, 90nm, 95nm, and 100nm.

[0052] Specifically, the thickness of the first copper layer 35 is 0.2 mm to 0.5 mm. In this embodiment, increasing the thickness of the first copper layer 35 significantly improves the material's electrical conductivity, which is particularly important for electronic packaging materials. Copper also has excellent thermal conductivity. A thicker first copper layer 35 helps more effectively conduct heat from the electronic components to the substrate and dissipate it, improving overall heat dissipation efficiency.

[0053] Specifically, the aluminum plate 31 may be a pure aluminum plate or an aluminum alloy plate.

[0054] like Figures 1 to 3As shown, the present invention also discloses an IGBT module, comprising an aluminum-based copper-clad laminate 3 prepared by the above-described preparation method, or the above-described aluminum-based copper-clad laminate 3; the aluminum-based copper-clad laminate 3 is used as a packaging substrate for the IGBT module. Since the IGBT module of the present invention comprises the above-described aluminum-based copper-clad laminate 3 or the aluminum-based copper-clad laminate 3 prepared by the above-described preparation method, it also has the specific structure and technical effects of the above-described aluminum-based copper-clad laminate 3 or the aluminum-based copper-clad laminate 3 prepared by the above-described preparation method, and will not be further described here.

[0055] Furthermore, the IGBT module also includes a housing 1, an IGBT chip 2, and an aluminum-based copper-clad laminate 3; the IGBT chip 2 is fixedly mounted on the first copper layer 35 of the aluminum-based copper-clad laminate 3, and the housing 1 is fixedly mounted on the aluminum-based copper-clad laminate 3 and covers the IGBT chip 2. The IGBT module of the present invention uses the aluminum-based copper-clad laminate 3 as a package carrier, with the IGBT chip 2 fixedly mounted on the first copper layer 35 of the aluminum-based copper-clad laminate 3. It does not utilize a ceramic substrate 60 or a copper heat-conducting block 70, and eliminates the copper layer 40 and solder layer 50 between the ceramic substrate 60 and the copper heat-conducting block 70. This saves on the ceramic substrate 60, the copper heat-conducting block 70, and the cost of the lamination process. This reduces costs, simplifies the process, improves production yield, and provides a simpler, more uniform structure. It eliminates the heat conduction resistance caused by a multi-layer structure, resulting in high heat conduction efficiency.

[0056] Specifically, a second copper layer 4 and a first solder layer 5 are provided between the IGBT chip 2 and the first copper layer 35. The second copper layer 4 is fixed on the first copper layer 35, the first solder layer 5 is fixed on the second copper layer 4, and the IGBT chip 2 is fixed on the first solder layer 5. The first solder layer 5 firmly fixes the IGBT chip 2 on the second copper layer 4 during the soldering process. The first solder layer 5 has good ductility and toughness under thermal cycles and mechanical stress, which helps to improve the reliability of the module. The IGBT module also includes a busbar terminal 30, and the IGBT chip 2 is electrically connected to the busbar terminal 30, and is electrically connected to the outside of the housing 1 through the busbar terminal 30. Specifically, as Figure 2 As shown, the electrodes of the IGBT chip 2 (e.g., emitter, collector, and gate) are electrically connected to the second copper layer 4 using metal bonding wires 20 through wire bonding technology. Current is then transferred from the IGBT chip 2 to the external circuit via busbar terminals 30, thereby achieving electrical connection with the external circuit. The metal bonding wires 20 can be gold, aluminum, or copper wires.

[0057] The IGBT module also includes a heat sink 6, which is fixed on the side of the aluminum-based copper-clad laminate 3 facing away from the housing 1. The provision of the heat sink 6 can significantly improve the heat dissipation capacity of the IGBT module. Since the IGBT module generates a large amount of heat when working, an effective heat dissipation design is crucial to maintaining stable operation and extending the service life of the IGBT module. Specifically, the heat sink 6 is made of aluminum, and a plurality of rows of heat dissipation fins 61 are provided on the side of the heat sink 6 facing away from the aluminum-based copper-clad laminate 3. The multiple rows of heat dissipation fins 61 increase the surface area of the heat sink 6, thereby improving the heat dissipation efficiency and allowing more heat to be dissipated through air convection. The heat sink 6 is fixed to the aluminum-based copper-clad laminate 3 by fasteners 7. The use of fasteners 7 can ensure that a stable mechanical connection is formed between the heat sink 6 and the aluminum-based copper-clad laminate 3, reducing displacement or falling off due to vibration or thermal expansion. The fasteners 7 can be rivets, screws, etc.

[0058] Furthermore, thermally conductive silicone 8 is coated between the heat sink 6 and the aluminum-based copper-clad laminate 3. As a thermally conductive material, the thermally conductive silicone 8 can effectively fill the micro-gap between the heat sink 6 and the aluminum-based copper-clad laminate 3, forming a thin and uniform heat conduction layer, improving the thermal interface, reducing thermal resistance, and increasing the efficiency of heat transfer from the IGBT chip 2 to the heat sink 6.

[0059] Furthermore, the interior of the shell is filled with silicone material 9, which encapsulates and fixes the IGBT chip 2. The filling of silicone material 9 can provide stable support for the IGBT chip 2 and reduce displacement or damage caused by vibration or impact. The filled silicone material 9 can protect the IGBT chip 2 from moisture, dust and other environmental factors, thereby extending the service life of the IGBT chip 2. The interior of the shell is filled with epoxy resin 10, which is filled between the silicone material 9 and the top of the shell 1. The epoxy resin 10 has high mechanical strength and can provide additional physical protection for the IGBT chip 2 to resist external shocks and vibrations. The filling of epoxy resin 10 can reduce the noise caused by vibration of the internal components of the IGBT module and improve the working stability of the module.

[0060] It should be understood that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Those skilled in the art may modify the technical solutions described in the above embodiments, or make equivalent replacements for some of the technical features therein; and all these modifications and replacements should fall within the scope of protection of the claims attached to the present invention.

Claims

1. An aluminum-based copper-clad laminate, characterized in that: It includes an aluminum plate, an oxide film layer, a silicon carbide layer, a nickel-copper alloy layer and a first copper layer; the oxide film layer is formed on both sides of the aluminum plate, the silicon carbide layer is formed on the oxide film layer on both sides of the aluminum plate, the nickel-copper alloy layer is formed on the silicon carbide layer on both sides of the aluminum plate, and the first copper layer is formed on the nickel-copper alloy layer on both sides of the aluminum plate.

2. The aluminum-based copper-clad laminate according to claim 1, characterized in that: The thickness of the oxide film layer is 12um to 25um.

3. The aluminum-based copper-clad laminate according to claim 1, characterized in that: The thickness of the silicon carbide layer is 500nm to 5000nm.

4. The aluminum-based copper-clad laminate according to claim 1, characterized in that: The thickness of the nickel-copper alloy layer is 70nm-100nm.

5. The aluminum-based copper-clad laminate according to claim 1, characterized in that: The thickness of the first copper layer is 0.2 mm to 0.5 mm.

6. The aluminum-based copper-clad laminate according to claim 1, characterized in that: The aluminum plate is a pure aluminum plate or an aluminum alloy plate.

7. An IGBT module, characterized in that: The aluminum-based copper-clad laminate comprises the aluminum-based copper-clad laminate according to any one of claims 1 to 6; the aluminum-based copper-clad laminate is used as a packaging carrier for the IGBT module.

8. The IGBT module according to claim 7, characterized in that: The IGBT module also includes a housing, an IGBT chip, and a busbar terminal; the IGBT chip is fixed on the first copper layer of the aluminum-based copper-clad laminate, and the housing is fixed on the aluminum-based copper-clad laminate and covers the IGBT chip; the IGBT chip is electrically connected to the busbar terminal and is electrically connected to the outside of the housing through the busbar terminal.

9. The IGBT module according to claim 8, characterized in that: A second copper layer and a first solder layer are provided between the IGBT chip and the first copper layer. The second copper layer is fixed on the first copper layer. The first solder layer is fixed on the second copper layer. The IGBT chip is fixed on the first solder layer.

10. The IGBT module according to claim 9, characterized in that: The IGBT module further includes a heat sink, which is fixed on a side of the aluminum-based copper-clad plate facing away from the housing.

Images