Silicon carbide device

Abstract

The utility model provides a silicon carbide device, comprising: a first MOS transistor; the first end of the driving module is connected with the grid electrode of the first MOS tube; the first end of the clamping module is connected with the grid electrode of the first MOS tube, the second end of the clamping module is grounded, and the third end of the clamping module is connected with the second end of the driving module; wherein when the second end of the driving module is at a high level, the first end of the driving module is at a high level, and the first end and the second end of the clamping module are switched off; when the second end of the driving module is at a low level, the first end of the driving module is at a low level, and the first end and the second end of the clamping module are conducted. In the silicon carbide device disclosed by the invention, the conduction and cut-off of the first MOS tube do not need negative pressure participation, and only the driving module and the clamping module are involved, so that the structure is simpler, the cost is lower, and the first MOS tube can share driving with other devices, thereby improving the efficiency of actual testing.

Description

Technical Field

[0001] The present disclosure relates to the field of device driving technology, and in particular to a silicon carbide device. Background Art

[0002] Silicon carbide (SiC) devices are gaining increasing popularity due to their excellent performance. However, due to their low driving threshold voltage, negative voltage is required to ensure their reliable driving in practical applications. This requirement for negative voltage complicates and increases the cost of driving SiC devices. Furthermore, this requirement makes it difficult to share a driver with other devices, making actual testing more inconvenient and hindering the promotion and application of SiC devices. Summary of the Invention

[0003] The present disclosure aims to solve one of the technical problems in the related art at least to a certain extent.

[0004] To this end, an object of the present disclosure is to provide a silicon carbide device.

[0005] To achieve the above-mentioned objectives, the present disclosure provides a silicon carbide device, comprising: a first metal oxide semiconductor field effect transistor (MOS); a driving module, wherein a first end of the driving module is connected to a gate of the first MOS; and a clamping module, wherein a first end of the clamping module is connected to the gate of the first MOS, a second end of the clamping module is grounded, and a third end of the clamping module is connected to the second end of the driving module; wherein, when the second end of the driving module is at a high level, the first end of the driving module is at a high level, and the first and second ends of the clamping module are turned off; and when the second end of the driving module is at a low level, the first end of the driving module is at a low level, and the first and second ends of the clamping module are turned on.

[0006] Optionally, the driving module includes: a first resistor, a first end of the first resistor being connected to the gate of the first MOS tube; wherein, when the second end of the first resistor is at a high level, the first end of the first resistor is at a high level; when the second end of the first resistor is at a low level, the first end of the first resistor is at a low level.

[0007] Optionally, the clamping module includes: a first switch unit, wherein the first end of the first switch unit is connected to the second end of the driving module, and the second end of the first switch unit is grounded; a second switch unit, wherein the first end of the second switch unit is connected to the third end of the first switch unit, and the second end of the second switch unit is grounded, and the third end of the second switch unit is connected to the gate of the first MOS tube; a power supply module, wherein the power supply end of the power supply module is connected to the working power supply, and the power supply end of the power supply module is connected to the first end of the second switch unit; wherein, when the second end of the driving module is at a high level, the second and third ends of the first switch unit are turned on, and the second and third ends of the second switch unit are turned off; when the second end of the driving module is at a low level, the second and third ends of the first switch unit are turned off, and the second and third ends of the second switch unit are turned on.

[0008] Optionally, the first switch unit includes: a second resistor, a first end of the second resistor is connected to the second end of the driving module; a third resistor, a first end of the third resistor is connected to the second end of the second resistor, and the second end of the third resistor is grounded; a second MOS transistor, a gate of the second MOS transistor is connected to the first end of the third resistor, and the source of the second MOS transistor is grounded, and the drain of the second MOS transistor is respectively connected to the first end of the second switch unit and the power supply end of the power supply module; wherein, when the second end of the driving module is at a high level, the source and drain of the second MOS transistor are turned on; when the second end of the driving module is at a low level, the source and drain of the second MOS transistor are turned off.

[0009] Optionally, the second switch unit includes: a fourth resistor, a first end of the fourth resistor being respectively connected to the third end of the first switch unit and the power supply end of the power supply module, and a second end of the fourth resistor being grounded; a third MOS transistor, a gate of the third MOS transistor being connected to the first end of the fourth resistor, a source of the third MOS transistor being grounded, and a drain of the third MOS transistor being connected to the gate of the first MOS transistor.

[0010] Optionally, the power supply module includes: a fifth resistor, a first end of the fifth resistor is connected to the working power supply, and a second end of the fifth resistor is respectively connected to the third end of the first switch unit and the first end of the second switch unit.

[0011] Optionally, the silicon carbide device further includes: a package body, in which the first MOS tube, the driving module and the clamping module are respectively arranged; a gate wiring metal, which is arranged on the package body and connected to the gate of the first MOS tube; a source wiring metal, which is arranged on the package body and connected to the source of the first MOS tube; a drain wiring metal, which is arranged on the package body and connected to the drain of the first MOS tube; a drive wiring metal, which is arranged on the package body and connected to the second end of the driving module; a ground wiring metal, which is arranged on the package body and connected to the second end of the first switch unit, the second end of the second switch unit and the driving source of the first MOS tube respectively; and a power supply wiring metal, which is arranged on the package body and connected to the power supply end of the power supply module.

[0012] Optionally, the package body includes: a top, a bottom, and a first side and a second side located between the top and the bottom; wherein the drain wiring metal is arranged at the top of the package body, and the source wiring metal is arranged at an end of the bottom of the package body close to the second side, and the gate wiring metal, the drive wiring metal, the ground wiring metal and the power supply wiring metal are respectively arranged at an end of the bottom of the package body close to the first side.

[0013] Optionally, the power supply wiring metal, the ground wiring metal, the gate wiring metal and the drive wiring metal are distributed in sequence along the direction of the first side and the second side; or, the drive wiring metal, the gate wiring metal, the ground wiring metal and the power supply wiring metal are distributed in sequence along the direction of the first side and the second side; or, the power supply wiring metal, the drive wiring metal, the gate wiring metal and the ground wiring metal are distributed in sequence along the direction of the first side and the second side.

[0014] Optionally, the second end of the driving module is connected to the output end of the driving chip, and the power end of the driving chip is connected to the working power supply, and the driving chip is used to control the second end of the driving module to be a high level or a low level.

[0015] The technical solution provided by the present disclosure may have the following beneficial effects:

[0016] By converting the level of the second end of the driving module and utilizing the cooperation of the driving module and the clamping module, reliable on- and off-state of the first MOS tube is achieved. Furthermore, the on- and off-state of the first MOS tube does not require the participation of negative voltage and only involves the driving module and the clamping module. This not only simplifies the structure and reduces the cost, but also allows the first MOS tube to share a drive with other devices, thereby improving the efficiency of actual testing and facilitating the promotion and application of silicon carbide devices.

[0017] Additional aspects and advantages of the present disclosure will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The above and / or additional aspects and advantages of the present disclosure will become apparent and readily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0019] Figure 1 1 is a circuit diagram of a silicon carbide device according to an embodiment of the present disclosure;

[0020] Figure 2 1 is a circuit diagram of a silicon carbide device according to an embodiment of the present disclosure;

[0021] Figure 3 1 is a schematic structural diagram of a silicon carbide device proposed in one embodiment of the present disclosure;

[0022] Figure 4 1 is a schematic structural diagram of a silicon carbide device proposed in one embodiment of the present disclosure;

[0023] Figure 5 1 is a schematic structural diagram of a silicon carbide device proposed in one embodiment of the present disclosure;

[0024] As shown in the figure: 1. Drive module;

[0025] 2. Clamping module, 21. First switch unit, 22. Second switch unit, 23. Power supply module;

[0026] 3. Package body, 31. Top, 32. Bottom, 33. First side, 34. Second side;

[0027] 4. Gate wiring metal, 5. Source wiring metal, 6. Drain wiring metal, 7. Drive wiring metal, 8. Ground wiring metal, 9. Power supply wiring metal;

[0028] Q1, the first MOS tube, Q2, the second MOS tube, Q3, the third MOS tube;

[0029] R1, the first resistor, R2, the second resistor, R3, the third resistor, R4, the fourth resistor, and R5, the fifth resistor. DETAILED DESCRIPTION

[0030] The following describes in detail embodiments of the present disclosure, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended only to explain the present disclosure and are not to be construed as limiting the present disclosure. On the contrary, the embodiments of the present disclosure include all variations, modifications, and equivalents that fall within the spirit and scope of the appended claims.

[0031] like Figure 1 As shown, an embodiment of the present disclosure proposes a silicon carbide device, comprising: a first MOS transistor (Metal Oxide Semiconductor Field Effect Transistor, MOSFET, metal oxide semiconductor field effect transistor) Q1, a driving module 1 and a clamping module 2, wherein the first end of the driving module 1 is connected to the gate of the first MOS transistor Q1, the first end of the clamping module 2 is connected to the gate of the first MOS transistor Q1, the second end of the clamping module 2 is grounded, and the third end of the clamping module 2 is connected to the second end of the driving module 1. When the second end of the driving module 1 is at a high level, the first end of the driving module 1 is at a high level, and the first and second ends of the clamping module 2 are turned off; when the second end of the driving module 1 is at a low level, the first end of the driving module 1 is at a low level, and the first and second ends of the clamping module 2 are turned on.

[0032] It can be understood that when the second end of the driving module 1 is at a high level, the first end of the driving module 1 is also at a high level, thereby acting on the gate of the first MOS transistor Q1, so that the source and drain of the first MOS transistor Q1 are turned on, and when the second end of the driving module 1 is at a high level, the first end and the second end of the clamping module 2 are turned off, thereby realizing a high-impedance path between the gate of the first MOS transistor Q1 and the ground, thereby ensuring stable conduction of the source and drain of the first MOS transistor Q1.

[0033] When the second end of the driving module 1 is at a low level, the first end of the driving module 1 is also at a low level, thereby acting on the gate of the first MOS transistor Q1, so that the source and drain of the first MOS transistor Q1 are turned off. Moreover, when the second end of the driving module 1 is at a low level, the first end and the second end of the clamping module 2 are turned on, thereby realizing a low-impedance path between the gate of the first MOS transistor Q1 and the ground, thereby ensuring the stable shutdown of the source and drain of the first MOS transistor Q1.

[0034] Thus, by level conversion at the second end of the driver module 1 and by utilizing the cooperation between the driver module 1 and the clamping module 2, reliable turning on and off of the first MOS transistor Q1 is achieved. Furthermore, the turning on and off of the first MOS transistor Q1 does not require the participation of negative voltage, and only involves the driver module 1 and the clamping module 2. This not only makes the structure simpler and the cost lower, but also allows the first MOS transistor Q1 to share a common drive with other devices, thereby improving the efficiency of actual testing and facilitating the promotion and application of silicon carbide devices.

[0035] It should be noted that silicon carbide (SiC) devices are made of SiC material. In this embodiment, the use of the first MOS transistor Q1 results in a SiC MOSFET. Compared to Si MOSFETs, SiC MOSFETs have significantly lower on-resistance and switching losses, making them suitable for higher operating frequencies. Furthermore, their high-temperature operating characteristics significantly enhance their high-temperature stability. In actual testing, the SiC device of this embodiment can achieve reliable driving through level conversion, allowing it to be shared with devices such as super-junction MOS transistors.

[0036] The first MOS transistor Q1 is a MOS transistor having a gate (gate, G), a source (source, S), and a drain (drain, D). When the gate of the MOS transistor is at a high level, that is, when the gate voltage reaches a threshold voltage, the source and drain of the MOS transistor are conductive. MOS transistors are classified into PMOS transistors (P-channel type) and NMOS transistors (N-channel type). The specific type of the first MOS transistor Q1 can be set according to actual needs and is not limited thereto. For example, the first MOS transistor Q1 can be an NMOS transistor. In addition to being turned on and off by the driving module 1 and the clamping module 2, the first MOS transistor Q1 can also be driven directly by a gate input signal.

[0037] The driving module 1 is used to transfer a driving signal to drive the first MOS transistor Q1. When the driving signal is at a high level, the driving module 1 outputs a high level, that is, the first end is at a high level. When the driving signal is at a low level, the driving module 1 outputs a low level, that is, the first end is at a low level. The specific type of the driving module 1 can be set according to actual needs and is not limited to this.

[0038] The clamping module 2 is used to clamp the gate voltage of the first MOS transistor Q1. When the drive signal is at a high level, the clamping module 2 cuts off the path between the gate of the first MOS transistor Q1 and the ground. When the drive signal is at a low level, the clamping module 2 switches on the path between the gate of the first MOS transistor Q1 and the ground. Thus, reliable conduction and cutoff of the first MOS transistor Q1 are achieved. The specific type of the clamping module 2 can be set according to actual needs and is not limited to this.

[0039] like Figure 2As shown, in some embodiments, the driving module 1 includes: a first resistor R1, wherein a first end of the first resistor R1 is connected to the gate of the first MOS transistor Q1. When the second end of the first resistor R1 is at a high level, the first end of the first resistor R1 is at a high level; when the second end of the first resistor R1 is at a low level, the first end of the first resistor R1 is at a low level.

[0040] It can be understood that the first resistor R1 acts as a driving resistor to divide voltage and limit current, thereby ensuring stable and safe operation of the first MOS transistor Q1 while turning on and off the first MOS transistor Q1.

[0041] It should be noted that the specific type of the first resistor R1 can be set according to actual needs and is not limited thereto.

[0042] like Figure 1 As shown, in some embodiments, the clamping module 2 includes: a first switch unit 21, a second switch unit 22, and a power supply module 23. The first end of the first switch unit 21 is connected to the second end of the driver module 1, and the second end of the first switch unit 21 is grounded. The first end of the second switch unit 22 is connected to the third end of the first switch unit 21, and the second end of the second switch unit 22 is grounded. The third end of the second switch unit 22 is connected to the gate of the first MOS transistor Q1. The power supply end of the power supply module 23 is connected to the working power supply, and the power supply end of the power supply module 23 is connected to the first end of the second switch unit 22. When the second end of the driver module 1 is at a high level, the second and third ends of the first switch unit 21 are connected, and the second and third ends of the second switch unit 22 are disconnected. When the second end of the driver module 1 is at a low level, the second and third ends of the first switch unit 21 are disconnected, and the second and third ends of the second switch unit 22 are connected.

[0043] It can be understood that when the second end of the driving module 1 is at a high level, the first switch unit 21 is driven by the high-level signal to achieve conduction between the second end and the third end, thereby achieving a low-impedance path between the first end of the second switch unit 22 and the ground, and further achieving a low level at the first end of the second switch unit 22. As a result, the second switch unit 22 is disconnected from the second end and the third end under the action of the low-level signal, thereby achieving a high-impedance path between the gate of the first MOS transistor Q1 and the ground, and further ensuring stable conduction of the source and drain of the first MOS transistor Q1.

[0044] When the second end of the driving module 1 is at a low level, the first switch unit 21 is driven by the low-level signal to disconnect the second and third ends, thereby realizing a high-impedance path between the first end of the second switch unit 22 and the ground. Further, under the power supply of the power supply module 23, the first end of the second switch unit 22 is at a high level. As a result, the second switch unit 22 is connected to the second and third ends under the action of the high-level signal, thereby realizing a low-impedance path between the gate of the first MOS transistor Q1 and the ground, thereby ensuring stable disconnection of the source and drain of the first MOS transistor Q1.

[0045] It should be noted that the first switch unit 21 is used to control the second switch unit 22 according to the level state of the second end of the driving module 1. When the first end of the first switch unit 21 is at a high level, the second end and the third end of the first switch unit 21 are turned on. When the first end of the first switch unit 21 is at a low level, the second end and the third end of the first switch unit 21 are turned off. The specific type of the first switch unit 21 can be set according to actual needs and is not limited to this.

[0046] The second switch unit 22 is used to clamp the gate voltage of the first MOS transistor Q1 according to the on / off state of the first switch unit 21 and the power supply of the power supply module 23. When the first end of the second switch unit 22 is at a high level, the second end and the third end of the second switch unit 22 are turned on. When the first end of the second switch unit 22 is at a low level, the second end and the third end of the second switch unit 22 are turned off. The specific type of the second switch unit 22 can be set according to actual needs and is not limited to this.

[0047] The power supply module 23 is used to supply power to the first end of the second switch unit 22 under the power supply of the working power supply so that the first end of the second switch unit 22 can be in a high level state. The specific type of the power supply module 23 can be set according to actual needs and is not limited to this.

[0048] like Figure 2 As shown, in some embodiments, the first switch unit 21 includes: a second resistor R2, a third resistor R3, and a second MOS transistor Q2. The first end of the second resistor R2 is connected to the second end of the driver module 1, the first end of the third resistor R3 is connected to the second end of the second resistor R2, and the second end of the third resistor R3 is grounded. The gate of the second MOS transistor Q2 is connected to the first end of the third resistor R3, and the source of the second MOS transistor Q2 is grounded. The drain of the second MOS transistor Q2 is respectively connected to the first end of the second switch unit 22 and the power supply end of the power supply module 23. When the second end of the driver module 1 is at a high level, the source and drain of the second MOS transistor Q2 are turned on; when the second end of the driver module 1 is at a low level, the source and drain of the second MOS transistor Q2 are turned off.

[0049] It can be understood that when the second end of the driving module 1 is at a high level, the high-level signal acts on the gate of the second MOS transistor Q2 through the second resistor R2 and the third resistor R3, so that the source and drain of the second MOS transistor Q2 are turned on, thereby realizing a low-impedance path between the first end of the second switch unit 22 and the ground, and further realizing a low level at the first end of the second switch unit 22; when the second end of the driving module 1 is at a low level, the low-level signal acts on the gate of the second MOS transistor Q2 through the second resistor R2 and the third resistor R3, so that the source and drain of the second MOS transistor Q2 are turned off, thereby realizing a high-impedance path between the first end of the second switch unit 22 and the ground, and further realizing a high level at the first end of the second switch unit 22.

[0050] It should be noted that the second MOS transistor Q2 is also a MOS transistor. The specific type of the second MOS transistor Q2 can be set according to actual needs and is not limited thereto. For example, the second MOS transistor Q2 can be an NMOS transistor.

[0051] The specific types of the second resistor R2 and the third resistor R3 can be set according to actual needs and are not limited thereto.

[0052] like Figure 2 As shown, in some embodiments, the second switch unit 22 includes: a fourth resistor R4 and a third MOS transistor Q3, the first end of the fourth resistor R4 is respectively connected to the third end of the first switch unit 21 and the power supply end of the power supply module 23, and the second end of the fourth resistor R4 is grounded, the gate of the third MOS transistor Q3 is connected to the first end of the fourth resistor R4, the source of the third MOS transistor Q3 is grounded, and the drain of the third MOS transistor Q3 is connected to the gate of the first MOS transistor Q1.

[0053] It can be understood that when the second end of the driving module 1 is at a high level and the second and third ends of the first switch unit 21 are turned on, a low impedance state is present between the gate of the third MOS transistor Q3 and the ground, so that the gate of the third MOS transistor Q3 is at a low level and the source and drain of the third MOS transistor Q3 are turned off, thereby realizing a high impedance path between the gate of the first MOS transistor Q1 and the ground, thereby ensuring stable conduction of the source and drain of the first MOS transistor Q1.

[0054] When the second end of the driving module 1 is at a low level and the second and third ends of the first switch unit 21 are turned off, a high impedance state is present between the gate of the third MOS transistor Q3 and the ground, so that the gate of the third MOS transistor Q3 is at a high level and the source and drain of the third MOS transistor Q3 are turned on, thereby realizing a low impedance path between the gate of the first MOS transistor Q1 and the ground, and ensuring that the source and drain of the first MOS transistor Q1 are stably turned off.

[0055] It should be noted that the third MOS transistor Q3 is also a MOS transistor. The specific type of the third MOS transistor Q3 can be set according to actual needs and is not limited thereto. For example, the third MOS transistor Q3 can be an NMOS transistor.

[0056] The specific type of the fourth resistor R4 can be set according to actual needs and is not limited thereto.

[0057] like Figure 2 As shown, in some embodiments, the power supply module 23 includes: a fifth resistor R5, a first end of the fifth resistor R5 is connected to the working power supply, and a second end of the fifth resistor R5 is respectively connected to the third end of the first switch unit 21 and the first end of the second switch unit 22.

[0058] It can be understood that when the second and third ends of the first switch unit 21 are turned off, a high impedance state is present between the first end of the second switch unit 22 and the ground, and the fifth resistor R5 acts on the first end of the second switch unit 22 after dividing the voltage and limiting the current of the electric energy of the working power supply, so that the second switch unit 22 can be in a high-level state, thereby ensuring stable conduction of the second and third ends of the second switch unit 22, and further ensuring reliable shutdown of the first MOS transistor Q1.

[0059] It should be noted that the specific type of the fifth resistor R5 can be set according to actual needs and is not limited to this.

[0060] like Figure 3 、 Figure 4 and Figure 5 As shown, in some embodiments, the silicon carbide device further includes: a package body 3, a gate wiring metal 4, a source wiring metal 5, a drain wiring metal 6, a driving wiring metal 7, a grounding wiring metal 8, and a power supply wiring metal 9. The first MOS transistor Q1, the driving module 1, and the clamping module 2 are respectively arranged in the package body 3. The gate wiring metal 4 is arranged on the package body 3 and connected to the gate of the first MOS transistor Q1. The source wiring metal 5 is arranged on the package body 3 and connected to the source of the first MOS transistor Q1. The drain wiring metal 6 is arranged on the package body 3 and connected to the drain of the first MOS transistor Q1. The driving wiring metal 7 is arranged on the package body 3 and connected to the second end of the driving module 1. The grounding wiring metal 8 is arranged on the package body 3 and connected to the second end of the first switch unit 21, the second end of the second switch unit 22, and the driving source of the first MOS transistor Q1. The power supply wiring metal 9 is arranged on the package body 3 and connected to the power supply end of the power supply module 23.

[0061] It can be understood that since the first MOS transistor Q1, the driving module 1 and the clamping module 2 are respectively arranged in the package body 3, and the gate wiring metal 4, the source wiring metal 5, the drain wiring metal 6, the driving wiring metal 7, the ground wiring metal 8 and the power supply wiring metal 9 are respectively arranged on the package body 3, the silicon carbide device can realize an integrated packaging arrangement by using the package body 3, and can also realize stable electrical connection with other devices by using each wiring metal.

[0062] It should be noted that the package body 3 is used to encapsulate the first MOS transistor Q1, the driving module 1 and the clamping module 2 to achieve integration and protection of the first MOS transistor Q1, the driving module 1 and the clamping module 2. The specific type of the package body 3 can be set according to actual needs and is not limited to this. For example, the package body 3 can be a TOLL (Transistor Outline Leadless, leadless power device) package.

[0063] The gate wiring metal 4 is used to extend the gate of the first MOS transistor Q1 to facilitate electrical connection between the gate of the first MOS transistor Q1 and other devices. The specific type of the gate wiring metal 4 can be set according to actual needs and is not limited to this. For example, the gate wiring metal 4 can be a metal pin, and the gate wiring metal 4 can serve as any pin between the first and fourth pins in the silicon carbide device, defined as the Gate pin.

[0064] The source wiring metal 5 is used to extend the source of the first MOS transistor Q1 to facilitate electrical connection between the source of the first MOS transistor Q1 and other devices. The specific type of the source wiring metal 5 can be set according to actual needs and is not limited to this. For example, the source wiring metal 5 can be a plurality of metal pins, and the source wiring metal 5 can serve as all pins between the fifth and eighth pins in the silicon carbide device, which are defined as source pins.

[0065] The drain wiring metal 6 is used to extend the drain of the first MOS transistor Q1 to facilitate electrical connection between the drain of the first MOS transistor Q1 and other devices. The specific type of the drain wiring metal 6 can be set according to actual needs and is not limited to this. For example, the drain wiring metal 6 can be a large area of drain metal area, defined as a drain area.

[0066] Drive wiring metal 7 extends the second end of driver module 1 to facilitate electrical connection between the second end of driver module 1 and other devices. The specific type of drive wiring metal 7 can be set according to actual needs and is not limited thereto. For example, drive wiring metal 7 can be a metal pin, and drive wiring metal 7 can serve as any pin between the first and fourth pins of the silicon carbide device, defined as the Clp pin. Drive wiring metal 7 can be connected to the second end of the first resistor R1 and the first end of the second resistor R2.

[0067] The grounding metal 8 serves as an extension of the second end of the first switch unit 21, the second end of the second switch unit 22, and the driving source of the first MOS transistor Q1, thereby facilitating grounding of the second end of the first switch unit 21, the second end of the second switch unit 22, and the driving source of the first MOS transistor Q1. The specific type of the grounding metal 8 can be set according to actual needs and is not limited thereto. For example, the grounding metal 8 can be a metal pin, and the grounding metal 8 can serve as any pin between the first and fourth pins in the silicon carbide device, defined as the KS pin. The grounding metal 8 can be connected to the second end of the third resistor R3, the source of the second MOS transistor Q2, the second end of the fourth resistor R4, the source of the third MOS transistor Q3, and the driving source of the first MOS transistor Q1.

[0068] The power supply connection metal 9 serves as an extension of the power supply terminal of the power supply module 23 to facilitate electrical connection between the power supply terminal of the power supply module 23 and the working power supply. The specific type of the power supply connection metal 9 can be set according to actual needs and is not limited to this. For example, the power supply connection metal 9 can be a metal pin, and the power supply connection metal 9 can serve as any pin between the first and fourth pins of the silicon carbide device, defined as the Vdd pin. The power supply connection metal 9 can be connected to the first end of the fifth resistor R5.

[0069] like Figure 3 、 Figure 4 and Figure 5 As shown, in some embodiments, the package body 3 includes: a top 31, a bottom 32, and a first side 33 and a second side 34 located between the top 31 and the bottom 32. The drain wiring metal 6 is disposed on the top 31 of the package body 3, and the source wiring metal 5 is disposed on the bottom 32 of the package body 3 near the second side 34. The gate wiring metal 4, the driving wiring metal 7, the ground wiring metal 8, and the power supply wiring metal 9 are respectively disposed on the bottom 32 of the package body 3 near the first side 33.

[0070] It can be understood that by arranging the drain wiring metal 6 on the top 31 of the package body 3, arranging the source wiring metal 5 on the bottom 32 of the package body 3 close to the second side 34, and arranging the gate wiring metal 4, the drive wiring metal 7, the ground wiring metal 8 and the power supply wiring metal 9 on the bottom 32 of the package body 3 close to the first side 33, it is possible to ensure that the various wiring metals are reasonably arranged on the package body 3, thereby reducing the volume of the silicon carbide device and making the use of the silicon carbide device more flexible and convenient.

[0071] It should be noted that the package body 3 also includes: a front surface and a back surface located between the top 31 and the bottom 32 and between the first side 33 and the second side 34. The various wiring metals can be respectively arranged on the back surface of the package body 3. At the same time, the front surface of the package body 3 can be used for printing logos, etc.

[0072] like Figure 3 As shown, in some embodiments, the power supply wiring metal 9 , the ground wiring metal 8 , the gate wiring metal 4 and the driving wiring metal 7 are sequentially spaced apart along the direction of the first side 33 and the second side 34 .

[0073] It can be understood that by distributing the power supply wiring metal 9, the ground wiring metal 8, the gate wiring metal 4 and the drive wiring metal 7 in sequence along the first side 33 and the second side 34, the area of the driving module 1 and the clamping module 2 can be reduced to a minimum, thereby making the use of silicon carbide devices more flexible and convenient.

[0074] like Figure 4 As shown, in some embodiments, the driving wiring metal 7 , the gate wiring metal 4 , the ground wiring metal 8 and the power supply wiring metal 9 are sequentially spaced and distributed along the direction of the first side 33 and the second side 34 .

[0075] It can be understood that by distributing the drive wiring metal 7, the gate wiring metal 4, the ground wiring metal 8 and the power supply wiring metal 9 in sequence along the first side 33 and the second side 34, the area of the drive module 1 and the clamping module 2 can be reduced to a minimum, thereby making the use of silicon carbide devices more flexible and convenient.

[0076] like Figure 5 As shown, in some embodiments, the power supply wiring metal 9 , the driving wiring metal 7 , the gate wiring metal 4 and the ground wiring metal 8 are sequentially spaced and distributed along the direction of the first side 33 and the second side 34 .

[0077] It can be understood that by distributing the power supply wiring metal 9, the drive wiring metal 7, the gate wiring metal 4 and the ground wiring metal 8 in sequence along the first side 33 and the second side 34, the ground wiring metal 8 is made closer to the source wiring metal 5, thereby providing the lowest parasitic parameters for the driving module 1, thereby ensuring that the silicon carbide device has higher performance.

[0078] In some embodiments, the second end of the driving module 1 is connected to the output end of the driving chip, and the power end of the driving chip is connected to the working power supply. The driving chip is used to control the second end of the driving module 1 to be high or low.

[0079] It can be understood that, by driving the driver chip, a high-level state or a low-level state is achieved at the second end of the driver module 1, thereby realizing the drive control of turning on and off the first MOS tube Q1. At the same time, since the power supply end of the driver chip and the power supply end of the power supply module 23 are both connected to the working power supply, the driver chip and the silicon carbide device realize a shared power supply, thereby further simplifying the overall structure and reducing costs.

[0080] It should be noted that the driver chip is used to drive the first MOS transistor Q1 using the driver module 1 and the clamping module 2. The specific type of the driver chip can be set according to actual needs and is not limited thereto. The output end of the driver chip is connected to the power supply wiring metal 9.

[0081] In the description of the present disclosure, the terms "first", "second", etc. are used for descriptive purposes only and should not be understood as indicating or implying relative importance. In addition, in the description of the present disclosure, unless otherwise specified, the meaning of "plurality" is two or more.

[0082] Any process or method description in a flowchart or otherwise described herein may be understood to represent a module, segment or portion of code that includes one or more executable instructions for implementing the steps of a specific logical function or process, and the scope of the preferred embodiments of the present disclosure includes additional implementations in which functions may be performed out of the order shown or discussed, including performing functions in a substantially simultaneous manner or in the reverse order depending on the functions involved, which should be understood by those skilled in the art to which the embodiments of the present disclosure belong.

[0083] Throughout this specification, reference to terms such as "one embodiment," "some embodiments," "examples," "specific examples," or "some examples" means that a specific feature, structure, material, or characteristic described in conjunction with that embodiment or example is included in at least one embodiment or example of the present disclosure. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0084] Although the embodiments of the present disclosure have been shown and described above, it is understood that the above embodiments are illustrative and are not to be construed as limitations on the present disclosure. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present disclosure.

Claims

1. A silicon carbide device, characterized in that: include: First MOS tube; a driving module, wherein a first end of the driving module is connected to the gate of the first MOS transistor; a clamping module, wherein a first end of the clamping module is connected to the gate of the first MOS transistor, a second end of the clamping module is grounded, and a third end of the clamping module is connected to the second end of the driving module; Wherein, when the second end of the driving module is at a high level, the first end of the driving module is at a high level, and the first end and the second end of the clamping module are turned off; When the second end of the driving module is at a low level, the first end of the driving module is at a low level, and the first end and the second end of the clamping module are conductive.

2. The silicon carbide device according to claim 1, characterized in that The driving module includes: a first resistor, wherein a first end of the first resistor is connected to the gate of the first MOS transistor; Wherein, when the second end of the first resistor is at a high level, the first end of the first resistor is at a high level; When the second end of the first resistor is at a low level, the first end of the first resistor is at a low level.

3. The silicon carbide device according to claim 1, wherein The clamping module includes: a first switch unit, wherein a first end of the first switch unit is connected to a second end of the driving module, and a second end of the first switch unit is grounded; a second switch unit, wherein a first end of the second switch unit is connected to a third end of the first switch unit, a second end of the second switch unit is grounded, and a third end of the second switch unit is connected to the gate of the first MOS transistor; a power supply module, wherein a power supply end of the power supply module is connected to a working power supply, and a power supply end of the power supply module is connected to a first end of the second switch unit; Wherein, when the second end of the driving module is at a high level, the second end and the third end of the first switch unit are turned on, and the second end and the third end of the second switch unit are turned off; When the second end of the driving module is at a low level, the second end and the third end of the first switch unit are turned off, and the second end and the third end of the second switch unit are turned on.

4. The silicon carbide device according to claim 3, characterized in that The first switch unit includes: a second resistor, wherein a first end of the second resistor is connected to a second end of the driving module; a third resistor, wherein a first end of the third resistor is connected to a second end of the second resistor, and a second end of the third resistor is grounded; a second MOS transistor, wherein a gate of the second MOS transistor is connected to the first end of the third resistor, a source of the second MOS transistor is grounded, and a drain of the second MOS transistor is respectively connected to the first end of the second switch unit and the power supply end of the power supply module; Wherein, when the second end of the driving module is at a high level, the source and drain of the second MOS tube are turned on; When the second end of the driving module is at a low level, the source and drain of the second MOS transistor are turned off.

5. The silicon carbide device according to claim 3, characterized in that The second switch unit includes: a fourth resistor, wherein a first end of the fourth resistor is respectively connected to the third end of the first switch unit and the power supply end of the power supply module, and a second end of the fourth resistor is grounded; a third MOS transistor, wherein a gate of the third MOS transistor is connected to the first end of the fourth resistor, a source of the third MOS transistor is grounded, and a drain of the third MOS transistor is connected to the gate of the first MOS transistor.

6. The silicon carbide device according to claim 3, characterized in that The power supply module includes: a fifth resistor, wherein a first end of the fifth resistor is connected to the working power supply, and a second end of the fifth resistor is respectively connected to the third end of the first switch unit and the first end of the second switch unit.

7. The silicon carbide device according to claim 3, characterized in that The silicon carbide device further includes: A package body, wherein the first MOS transistor, the driving module and the clamping module are respectively arranged in the package body; A gate wiring metal, wherein the gate wiring metal is disposed on the package body and connected to the gate of the first MOS transistor; A source wiring metal, wherein the source wiring metal is disposed on the package body and connected to the source of the first MOS transistor; A drain wiring metal, wherein the drain wiring metal is disposed on the package body and connected to the drain of the first MOS transistor; a driving wiring metal, the driving wiring metal being disposed on the package body and connected to the second end of the driving module; A grounding metal connection, the grounding metal connection being provided on the package body and connected to the second end of the first switch unit, the second end of the second switch unit, and the driving source electrode of the first MOS transistor respectively; A power supply wiring metal is provided on the package body and is connected to a power supply terminal of the power supply module.

8. The silicon carbide device according to claim 7, characterized in that The package body comprises: a top portion, a bottom portion, and a first side edge and a second side edge located between the top portion and the bottom portion; The drain wiring metal is arranged on the top of the package body, and the source wiring metal is arranged on the bottom of the package body close to one end of the second side, and the gate wiring metal, the drive wiring metal, the ground wiring metal and the power supply wiring metal are respectively arranged on the bottom of the package body close to one end of the first side.

9. The silicon carbide device according to claim 8, characterized in that The power supply wiring metal, the ground wiring metal, the gate wiring metal and the driving wiring metal are sequentially spaced along the direction of the first side and the second side; or, The driving wiring metal, the gate wiring metal, the ground wiring metal and the power supply wiring metal are sequentially spaced along the direction of the first side and the second side; or, The power supply wiring metal, the driving wiring metal, the gate wiring metal and the ground wiring metal are sequentially spaced apart along the direction of the first side and the second side.

10. The silicon carbide device according to claim 3, characterized in that The second end of the driving module is connected to the output end of the driving chip, and the power end of the driving chip is connected to the working power supply. The driving chip is used to control the second end of the driving module to be a high level or a low level.

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