Mixed waste gas treatment equipment and semiconductor process system

Abstract

The utility model relates to mixed waste gas treatment equipment and a semiconductor process system. The mixed waste gas treatment equipment comprises a first mixed waste gas filtering part, a second mixed waste gas filtering part and a recycling part, the device has the advantages that the upstream semiconductor process equipment is communicated with the first mixed waste gas filtering part and the second mixed waste gas filtering part, and the communication sequence of the first mixed waste gas filtering part and the second mixed waste gas filtering part can be randomly ranked according to actual requirements; therefore, impurities such as hydrogen chloride, trichlorosilane, hydrogen phosphide and diborane in the semiconductor epitaxial gas can be removed, hydrogen is obtained, and the semiconductor epitaxial gas can be recycled and purified to meet emission requirements.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor epitaxial gas treatment, in particular to mixed waste gas treatment equipment and a semiconductor process system. Background Art

[0002] The semiconductor device manufacturing process generates a large amount of waste, including toxic and hazardous substances such as fluorine- and chlorine-containing compounds. If the waste gas or waste liquid containing these toxic and hazardous substances is not properly treated, it will have a significant impact on the wafer manufacturing plant and its surrounding environment.

[0003] A Chinese invention patent (CN101269296A) discloses a system for treating waste gas produced by a mixture of multiple harmful gases, including a wet scrubber for treating dust, crystals and general waste gas generated by the process, and a dry scrubber for treating special waste gas components containing fluorine or chlorine. A gas-liquid separation device is also included between the wet scrubber and the dry scrubber. The waste gas produced by the mixture of multiple harmful gases passes through the wet scrubber and the gas-liquid separation device in sequence and is separated into liquid and gas. The separated gas is then processed by the dry scrubber and discharged.

[0004] However, the above disclosed system for treating waste gas generated by a mixture of multiple harmful gases has the following drawbacks:

[0005] 1. The existing equipment has no backup processing device, and processing gaps may occur during the continuous processing of semiconductor epitaxial gases, resulting in the risk of waste gas not being treated in a timely manner;

[0006] 2. The existing equipment cannot customize the treatment method and treatment sequence for different waste gases in semiconductor epitaxial gases, and cannot adjust the treatment methods in a targeted manner;

[0007] 3. The existing equipment has no recovery device and cannot recover the gas that can be reused after treatment.

[0008] Currently, no effective solutions have been proposed for the problems existing in related technologies, such as the lack of backup treatment devices, the lack of recovery devices, and the inability to adjust the treatment sequence for different waste gases. Utility Model Content

[0009] The purpose of this utility model is to address the deficiencies in the existing technology and provide a mixed waste gas treatment device and a semiconductor process system to solve the problems existing in the related technology such as the lack of backup treatment devices, the lack of recovery devices, and the inability to adjust the treatment sequence for different waste gases.

[0010] In order to achieve the above purpose, the technical solution adopted by the utility model is:

[0011] In a first aspect, the present invention provides a mixed exhaust gas treatment device, comprising:

[0012] a first mixed exhaust gas filtering component, the first mixed exhaust gas filtering component being in communication with an upstream semiconductor process device and configured to filter semiconductor epitaxial gas to remove hydrogen chloride and trichlorosilane;

[0013] a second mixed exhaust gas filtering component, the second mixed exhaust gas filtering component being in communication with upstream semiconductor process equipment and / or the first mixed exhaust gas filtering component, and being configured to filter semiconductor epitaxial gas to remove phosphine and diborane;

[0014] A recovery component is connected to the first mixed exhaust gas filter component and / or the second mixed exhaust gas filter component, and is used to recover hydrogen generated by the first mixed exhaust gas filter component and the second mixed exhaust gas filter component.

[0015] In some embodiments, the first hybrid exhaust gas filter component includes:

[0016] at least one first gas delivery pipeline, wherein a first end of the first gas delivery pipeline is connected to an upstream semiconductor process equipment and is used to deliver semiconductor epitaxial gas;

[0017] at least one wet adsorption filter tank, the wet adsorption filter tank being in communication with the second end of the first gas delivery pipeline and being used for filtering semiconductor epitaxial gas to remove hydrogen chloride and trichlorosilane;

[0018] At least one second gas delivery pipeline, the first end of the second gas delivery pipeline is connected to the wet adsorption filter tank, and the second end of the second gas delivery pipeline is connected to the second mixed exhaust gas filter component, for delivering semiconductor epitaxial gas treated by the wet adsorption filter tank.

[0019] In some embodiments, the second hybrid exhaust gas filter component includes:

[0020] at least one third gas delivery pipeline, a first end of the third gas delivery pipeline being in communication with an upstream semiconductor process device or the first mixed exhaust gas filter component, for delivering semiconductor epitaxial gas;

[0021] at least one first dry adsorption filter tank, the first dry adsorption filter tank being in communication with the second end of the third gas delivery pipeline and being used for filtering semiconductor epitaxial gas to remove phosphine and diborane;

[0022] At least one fourth gas delivery pipeline, a first end of the fourth gas delivery pipeline is connected to the first dry adsorption filter tank, and a second end of the fourth gas delivery pipeline is connected to the recovery component, for delivering semiconductor epitaxial gas processed by the first dry adsorption filter tank.

[0023] In some embodiments, the recovery component includes:

[0024] a fifth gas delivery pipeline, a first end of which is in communication with the first mixed exhaust gas filter component or the second mixed exhaust gas filter component and is used for delivering hydrogen;

[0025] A steel cylinder tank is connected to the second end of the fifth gas delivery pipeline and is used to store hydrogen.

[0026] In some embodiments, further comprising:

[0027] The third mixed exhaust gas filter component is connected to the upstream semiconductor process equipment and / or the first mixed exhaust gas filter component and / or the second mixed exhaust gas filter component and the recovery component respectively, and is used to filter the semiconductor epitaxial gas to remove arsine.

[0028] In some embodiments, the third hybrid exhaust gas filter component includes:

[0029] at least one seventh gas delivery pipeline, a first end of the seventh gas delivery pipeline being in communication with an upstream semiconductor process device or the first mixed exhaust gas filter component or the second mixed exhaust gas filter component for delivering semiconductor epitaxial gas;

[0030] at least one second dry adsorption filter tank, the second dry adsorption filter tank being in communication with the second end of the seventh gas delivery pipeline and being used for filtering semiconductor epitaxial gas to remove arsine;

[0031] At least one eighth gas delivery pipeline, the first end of the eighth gas delivery pipeline is connected to the second dry adsorption filter tank, and the second end of the eighth gas delivery pipeline is connected to the recovery component, for delivering semiconductor epitaxial gas processed by the second dry adsorption filter tank.

[0032] In some embodiments, further comprising:

[0033] A gas-liquid separation component is provided downstream of the first mixed exhaust gas filtering component and is used for performing gas-liquid separation on the semiconductor epitaxial gas processed by the first mixed exhaust gas filtering component.

[0034] In some embodiments, the gas-liquid separation component includes:

[0035] a ninth gas delivery pipeline, a first end of which is in communication with the first mixed exhaust gas filter component and is used to deliver the semiconductor epitaxial gas processed by the first mixed exhaust gas filter component;

[0036] a gas-liquid separator, the gas-liquid separator being in communication with the second end of the ninth gas delivery pipeline and being used for performing gas-liquid separation on the semiconductor epitaxial gas processed by the first mixed exhaust gas filtering component;

[0037] a tenth gas delivery pipeline, a first end of the tenth gas delivery pipeline being in communication with the gas-liquid separator, and a second end of the tenth gas delivery pipeline being in communication with the second mixed exhaust gas filter component, for delivering gas;

[0038] A liquid delivery pipeline, wherein a first end of the liquid delivery pipeline is connected to the gas-liquid separator, and a second end of the liquid delivery pipeline is connected to the first mixed exhaust gas filter component, for delivering liquid.

[0039] In some embodiments, further comprising:

[0040] The exhaust component is connected to the recovery component and is used to discharge exhaust gas.

[0041] In some embodiments, the exhaust component includes:

[0042] at least one sixth gas delivery pipeline, both ends of which are respectively connected to the recovery component and are used to deliver hydrogen;

[0043] at least one vacuum pump, the vacuum pump being disposed in the sixth gas delivery pipeline and configured to form a vacuum negative pressure in the sixth gas delivery pipeline;

[0044] At least one exhaust pipe, a first end of the exhaust pipe is connected to the first mixed exhaust gas filter component or the second mixed exhaust gas filter component, and a second end of the exhaust pipe is connected to the exhaust gas treatment equipment for conveying exhaust gas.

[0045] In some embodiments, further comprising:

[0046] A purge component is connected to the first mixed exhaust gas filter component, the second mixed exhaust gas filter component, and the third mixed exhaust gas filter component respectively, and is used to purge the entire equipment.

[0047] In some embodiments, the purge component includes:

[0048] a first purge gas delivery pipeline, wherein a first end of the first purge gas delivery pipeline is in communication with a purge gas source, and a second end of the first purge gas delivery pipeline is in communication with the first mixed exhaust gas filter component for delivering purge gas;

[0049] a second purge gas delivery pipeline, wherein a first end of the second purge gas delivery pipeline is in communication with the first mixed exhaust gas filtering component, and a second end of the second purge gas delivery pipeline is in communication with the exhaust component for delivering exhaust gas;

[0050] a third purge gas delivery pipeline, wherein a first end of the third purge gas delivery pipeline is in communication with a purge gas source, and a second end of the third purge gas delivery pipeline is in communication with the second mixed exhaust gas filter component for delivering purge gas;

[0051] a fourth purge gas delivery pipeline, wherein a first end of the fourth purge gas delivery pipeline is in communication with the second mixed exhaust gas filter component, and a second end of the fourth purge gas delivery pipeline is in communication with the exhaust component, for delivering exhaust gas;

[0052] a fifth purge gas delivery pipeline, wherein a first end of the fifth purge gas delivery pipeline is in communication with a purge gas source, and a second end of the fifth purge gas delivery pipeline is in communication with the third mixed exhaust gas filter component, for delivering purge gas;

[0053] A sixth purge gas delivery pipeline, wherein a first end of the sixth purge gas delivery pipeline is connected to the third mixed exhaust gas filter component, and a second end of the sixth purge gas delivery pipeline is connected to the exhaust component, for delivering exhaust gas.

[0054] In a second aspect, the present invention further provides a semiconductor process system, comprising:

[0055] The mixed exhaust gas treatment equipment as described in the first aspect.

[0056] The present invention adopts the above technical solution, and compared with the prior art, has the following technical effects:

[0057] The utility model provides a mixed exhaust gas treatment device and a semiconductor process system, which connects the upstream semiconductor process equipment with a first mixed exhaust gas filter component and a second mixed exhaust gas filter component, and the order in which the first mixed exhaust gas filter component and the second mixed exhaust gas filter component are connected can be arbitrarily arranged according to actual needs, thereby removing impurities such as hydrogen chloride, trichlorosilane, phosphine, diborane, etc. in the semiconductor epitaxial gas and obtaining hydrogen, and then the semiconductor epitaxial gas can be recycled and purified to meet emission requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0058] Figure 1 Schematic diagram of a mixed exhaust gas treatment device according to an embodiment of the present invention (I);

[0059] Figure 2 is a schematic diagram of a first mixed exhaust gas filter component according to an embodiment of the present utility model;

[0060] Figure 3 is a schematic diagram of a second mixed exhaust gas filter component according to an embodiment of the present utility model;

[0061] Figure 4 is a schematic diagram of a recycling component according to an embodiment of the present utility model;

[0062] Figure 5 Schematic diagram of a mixed exhaust gas treatment device according to an embodiment of the present invention (II);

[0063] Figure 6 is a schematic diagram of a third hybrid exhaust gas filter component according to an embodiment of the present utility model;

[0064] Figure 7 Schematic diagram of a mixed exhaust gas treatment device according to an embodiment of the present invention (three;

[0065] Figure 8 is a schematic diagram of a discharge component according to an embodiment of the present utility model;

[0066] Figure 9 Schematic diagram of a mixed exhaust gas treatment device according to an embodiment of the present invention (four);

[0067] Figure 10 It is a schematic diagram of a purge component according to an embodiment of the present utility model.

[0068] The reference numerals are: 100, first mixed exhaust gas filter element; 101, wet adsorption filter tank; 102, first switch valve; 103, second switch valve; 104, third switch valve; 105, fourth switch valve; 106, first pressure sensor; 107, first temperature sensor;

[0069] 200, second mixed exhaust gas filter element; 201, first dry adsorption filter tank; 202, fifth on-off valve; 203, sixth on-off valve; 204, seventh on-off valve; 205, eighth on-off valve; 206, second pressure sensor; 207, second temperature sensor;

[0070] 300, recycled parts; 301, steel cylinder; 302, ninth switch valve; 303, tenth switch valve;

[0071] 400, third mixed exhaust gas filter element; 401, second dry adsorption filter tank; 402, eleventh on-off valve; 403, twelfth on-off valve; 404, thirteenth on-off valve; 405, fourteenth on-off valve; 406, third pressure sensor; 407, third temperature sensor;

[0072] 500. Gas-liquid separation components;

[0073] 600, discharge component; 601, vacuum pump; 602, fifteenth switch valve; 603, sixteenth switch valve;

[0074] 700, purge component; 701, seventeenth switch valve; 702, eighteenth switch valve; 703, nineteenth switch valve; 704, twentieth switch valve; 705, twenty-first switch valve; 706, twenty-second switch valve. DETAILED DESCRIPTION

[0075] In order to make the purpose, technical solutions and advantages of this application more clearly understood, the present application is described and illustrated below in conjunction with the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely used to explain this application and are not intended to limit this application. Based on the embodiments provided in this application, all other embodiments obtained by those of ordinary skill in the art without making any creative efforts are within the scope of protection of this application.

[0076] Obviously, the drawings described below are merely examples or embodiments of the present application. Those skilled in the art can, without inventive effort, apply the present application to other similar scenarios based on these drawings. Furthermore, it is also understood that, although the effort involved in such a development process may be complex and lengthy, for those skilled in the art related to the content disclosed in this application, changes in design, manufacturing, or production based on the technical content disclosed in this application are merely conventional technical means and should not be construed as an insufficiency of the content disclosed in this application.

[0077] References to "embodiments" in this application mean that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it refer to independent or alternative embodiments that are mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described in this application may be combined with other embodiments unless there is a conflict.

[0078] Example 1

[0079] This embodiment relates to the mixed exhaust gas treatment equipment of the present utility model.

[0080] An illustrative embodiment of the present invention is as follows: Figure 1 As shown, a mixed exhaust gas treatment device includes a first mixed exhaust gas filter component 100, a second mixed exhaust gas filter component 200, and a recovery component 300. The first mixed exhaust gas filter component 100 is connected to upstream semiconductor process equipment and is used to filter semiconductor epitaxial gas to remove hydrogen chloride and trichlorosilane; the second mixed exhaust gas filter component 200 is connected to upstream semiconductor process equipment and / or the first mixed exhaust gas filter component 100 and is used to filter semiconductor epitaxial gas to remove phosphine and diborane; and the recovery component 300 is connected to the first mixed exhaust gas filter component 100 and / or the second mixed exhaust gas filter component 200 and is used to recover hydrogen generated by the first mixed exhaust gas filter component 100 and the second mixed exhaust gas filter component 200.

[0081] It should be noted that the first end and the second end in the present invention are respectively two ends in the length direction.

[0082] It should be noted that the connection sequence between the upstream semiconductor process equipment, the first mixed exhaust gas filter component 100, and the second mixed exhaust gas filter component 200 of the present invention can be set according to the processing requirements of different gases, including the following methods, according to the gas flow order:

[0083] (1) Upstream semiconductor process equipment → first mixed exhaust gas filter component 100 → second mixed exhaust gas filter component 200 → recovery component 300;

[0084] (2) Upstream semiconductor process equipment → second mixed exhaust gas filtering component 200 → first mixed exhaust gas filtering component 100 → recovery component 300.

[0085] In the present invention, method (1) is taken as an example for explanation.

[0086] like Figure 2 As shown, the first mixed exhaust gas filter component 100 includes at least one first gas delivery pipeline, at least one wet adsorption filter tank 101, and at least one second gas delivery pipeline. The first end of the first gas delivery pipeline is connected to the upstream semiconductor process equipment and / or the second mixed exhaust gas filter component 200 for delivering semiconductor epitaxial gas; the wet adsorption filter tank 101 is connected to the second end of the first gas delivery pipeline for filtering the semiconductor epitaxial gas to remove hydrogen chloride and trichlorosilane; the first end of the second gas delivery pipeline is connected to the wet adsorption filter tank 101, and the second end of the second gas delivery pipeline is connected to the second mixed exhaust gas filter component 200 and / or the recovery component 300 for delivering the semiconductor epitaxial gas processed by the wet adsorption filter tank 101.

[0087] In some embodiments, the first gas delivery pipeline includes but is not limited to a stainless steel pipe.

[0088] In some embodiments, the wet adsorption filter tank 101 includes but is not limited to a water washing tank.

[0089] In some embodiments, the second gas delivery pipeline includes but is not limited to a stainless steel pipe.

[0090] In some embodiments, the first mixed exhaust gas filter component 100 includes a plurality of first gas delivery pipelines, a plurality of wet adsorption filter tanks 101, and a plurality of second gas delivery pipelines, and the plurality of first gas delivery pipelines, the plurality of wet adsorption filter tanks 101, and the plurality of second gas delivery pipelines correspond to each other one by one.

[0091] It should be noted that the number of the wet adsorption filter tanks 101 is two, and the two wet adsorption filter tanks 101 are connected to each other in series and in parallel.

[0092] In some embodiments, the number of wet adsorption filter tanks 101 may be 3, 4, etc., that is, the number of wet adsorption filter tanks 101 may be set according to actual processing requirements, and no excessive restrictions are imposed herein.

[0093] It should be noted that when two wet adsorption filter tanks 101 are connected in parallel, the two wet adsorption filter tanks 101 can realize separate treatment of semiconductor epitaxial gas; in addition, when gaps appear during the treatment of semiconductor epitaxial gas, the two wet adsorption filter tanks 101 can realize uninterrupted operation during the gas treatment process.

[0094] It should be noted that when two wet adsorption filter tanks 101 are connected in series, the two wet adsorption filter tanks 101 can realize multi-stage treatment of semiconductor epitaxial gas, that is, the semiconductor epitaxial gas processed by one wet adsorption filter tank 101 can be passed into another wet adsorption filter tank 101 for secondary treatment.

[0095] In some embodiments, the number of the first gas delivery pipelines matches the number of the wet adsorption filter canisters 101. It should be understood that the number of the first gas delivery pipelines is the same as the number of the wet adsorption filter canisters 101.

[0096] In some embodiments, the number of the second gas delivery pipelines matches the number of the wet adsorption filter canisters 101. It should be understood that the number of the second gas delivery pipelines is the same as the number of the wet adsorption filter canisters 101.

[0097] Furthermore, the first mixed exhaust gas filter component 100 further includes at least one first series pipeline, wherein the first end and the second end of the first series pipeline are respectively connected to the two wet adsorption filter tanks 101 for connecting the two wet adsorption filter tanks 101 in series.

[0098] Specifically, a first end of the first series pipeline is communicated with one wet adsorption filter tank 101 , and a second end of the first series pipeline is communicated with a first gas delivery pipeline on another wet adsorption filter tank 101 .

[0099] In some embodiments, the first series pipeline includes, but is not limited to, a stainless steel pipe.

[0100] In some embodiments, the number of first series pipelines matches the number of wet adsorption filter canisters 101; it should be understood that the number of first series pipelines is not less than the number of wet adsorption filter canisters 101. For example, if there are three wet adsorption filter canisters 101, there may be three first series pipelines (i.e., the first end of each first series pipeline is connected to one wet adsorption filter canister 101, and the second end of each first series pipeline is connected to the remaining two wet adsorption filter canisters 101). Alternatively, there may be six first series pipelines (i.e., the first end of each first series pipeline is connected to only one wet adsorption filter canister 101, and the second end of each first series pipeline is connected to only one wet adsorption filter canister 101).

[0101] Furthermore, the first mixed exhaust gas filter component 100 further includes at least one first pressure relief pipeline, wherein a first end of the first pressure relief pipeline is connected to the first gas delivery pipeline, and a second end of the first pressure relief pipeline is connected to the second gas delivery pipeline for pressure relief.

[0102] In some embodiments, the first pressure relief line includes but is not limited to a stainless steel pipe.

[0103] In some embodiments, the number of the first pressure relief pipelines matches the number of the wet adsorption filter tanks 101. It should be understood that the number of the first pressure relief pipelines is the same as the number of the wet adsorption filter tanks 101.

[0104] Furthermore, the first mixed exhaust gas filter component 100 further includes at least one first on-off valve 102 and at least one second on-off valve 103. The first on-off valve 102 is disposed in the first gas delivery pipeline to control the flow of gas therethrough; the second on-off valve 103 is disposed in the second gas delivery pipeline to control the flow of gas therethrough.

[0105] Specifically, the first switch valve 102 is a three-way valve structure and is disposed at the connection point between the first gas delivery pipeline and the first series pipeline, that is, the first switch valve 102 is connected to the second end (ie, the output end) of the first series pipeline.

[0106] In some embodiments, the number of the first switch valves 102 matches the number of the first gas delivery pipelines. It should be understood that the number of the first switch valves 102 is the same as the number of the first gas delivery pipelines.

[0107] In some embodiments, the first switching valve 102 includes but is not limited to a diaphragm valve.

[0108] In some embodiments, the number of the second switch valves 103 matches the number of the second gas delivery pipelines. It should be understood that the number of the second switch valves 103 is the same as the number of the second gas delivery pipelines.

[0109] In some embodiments, the first switching valve 102 includes but is not limited to a diaphragm valve.

[0110] Furthermore, the first mixed exhaust gas filtering component 100 further includes at least one third switch valve 104. The third switch valve 104 is disposed in the first series pipeline and is used to control the flow of the first series pipeline.

[0111] Generally, the third switch valve 104 is disposed at the first end (ie, the input end) of the first series pipeline.

[0112] In some embodiments, the number of the third switch valves 104 matches the number of the first series pipelines. It should be understood that the number of the third switch valves 104 is the same as the number of the first series pipelines.

[0113] In some embodiments, the third switching valve 104 includes but is not limited to a diaphragm valve.

[0114] Furthermore, the first mixed exhaust gas filtering component 100 further includes at least one fourth switch valve 105. The fourth switch valve 105 is provided in the first pressure relief pipeline to control the flow of the first pressure relief pipeline.

[0115] In some embodiments, the number of the fourth switch valves 105 matches the number of the first pressure relief lines. It should be understood that the number of the fourth switch valves 105 is the same as the number of the first pressure relief lines.

[0116] In some embodiments, the fourth switch valve 105 includes but is not limited to a diaphragm valve.

[0117] Furthermore, the first mixed exhaust gas filter component 100 further includes at least one first pressure sensor 106 , wherein the first pressure sensor 106 is in communication with the wet adsorption filter tank 101 and is used to monitor the pressure inside the wet adsorption filter tank 101 .

[0118] In some embodiments, the number of the first pressure sensors 106 matches the number of the wet adsorption filter canisters 101 ; it should be understood that the number of the first pressure sensors 106 is the same as the number of the wet adsorption filter canisters 101 .

[0119] In some embodiments, the first pressure sensor 106 includes, but is not limited to, a pressure sensor.

[0120] Furthermore, the first mixed exhaust gas filter component 100 further includes at least one first temperature sensor 107 . The first temperature sensor 107 is in communication with the wet adsorption filter tank 101 and is used to monitor the temperature inside the wet adsorption filter tank 101 .

[0121] In some embodiments, the number of the first temperature sensors 107 matches the number of the wet adsorption filter canisters 101. It should be understood that the number of the first temperature sensors 107 is the same as the number of the wet adsorption filter canisters 101.

[0122] In some embodiments, the first temperature sensor 107 includes but is not limited to a temperature sensor.

[0123] like Figure 3 As shown, the second mixed exhaust gas filter component 200 includes at least one third gas delivery pipeline, at least one first dry adsorption filter tank 201, and at least one fourth gas delivery pipeline. The first end of the third gas delivery pipeline is connected to the upstream semiconductor process equipment and / or the first mixed exhaust gas filter component 100 for delivering semiconductor epitaxial gas; the first dry adsorption filter tank 201 is connected to the second end of the third gas delivery pipeline for filtering the semiconductor epitaxial gas to remove phosphine and diborane; the first end of the fourth gas delivery pipeline is connected to the first dry adsorption filter tank 201, and the second end of the fourth gas delivery pipeline is connected to the first mixed exhaust gas filter component 100 and / or the recovery component 300 for delivering the semiconductor epitaxial gas processed by the first dry adsorption filter tank 201.

[0124] Specifically, the third gas delivery pipeline is connected to the second gas delivery pipeline (corresponding to method (1)); the fourth gas delivery pipeline is connected to the first gas delivery pipeline (corresponding to method (2)).

[0125] In some embodiments, the third gas delivery pipeline includes but is not limited to a stainless steel pipe.

[0126] In some embodiments, the first dry adsorption filter canister 201 includes but is not limited to an adsorption filter canister.

[0127] In some embodiments, the fourth gas delivery pipeline includes but is not limited to a stainless steel pipe.

[0128] In some embodiments, the second mixed exhaust gas filter component 200 includes several third gas delivery pipelines, several first dry adsorption filter tanks 201, and several fourth gas delivery pipelines, and the several third gas delivery pipelines, several first dry adsorption filter tanks 201, and several fourth gas delivery pipelines correspond one to one.

[0129] It should be noted that the number of the first dry-type adsorption filter tanks 201 is two, and the two first dry-type adsorption filter tanks 201 are connected to each other in series and in parallel.

[0130] In some embodiments, the number of the first dry adsorption filter tanks 201 may be 3, 4, etc., that is, the number of the first dry adsorption filter tanks 201 may be set according to actual processing requirements, and no excessive restrictions are imposed herein.

[0131] It should be noted that when the two first dry adsorption filter tanks 201 are connected in parallel, the two first dry adsorption filter tanks 201 can realize separate treatment of semiconductor epitaxial gas; in addition, when gaps appear during the treatment of semiconductor epitaxial gas, the two first dry adsorption filter tanks 201 can realize uninterrupted operation during the gas treatment process.

[0132] It should be noted that when two first dry adsorption filter tanks 201 are connected in series, the two first dry adsorption filter tanks 201 can realize multi-stage treatment of semiconductor epitaxial gas, that is, the semiconductor epitaxial gas processed by one first dry adsorption filter tank 201 can be passed into another first dry adsorption filter tank 201 for secondary treatment.

[0133] In some embodiments, the number of the third gas delivery pipelines matches the number of the first dry adsorption filter canisters 201. It should be understood that the number of the third gas delivery pipelines is the same as the number of the first dry adsorption filter canisters 201.

[0134] In some embodiments, the number of the fourth gas delivery pipelines matches the number of the first dry adsorption filter canisters 201. It should be understood that the number of the fourth gas delivery pipelines is the same as the number of the first dry adsorption filter canisters 201.

[0135] Furthermore, the second mixed exhaust gas filter component 200 further includes at least one second series pipeline, wherein the first end and the second end of the second series pipeline are respectively connected to the two first dry adsorption filter tanks 201 for connecting the two first dry adsorption filter tanks 201 in series.

[0136] Specifically, a first end of the second series pipeline is communicated with one first dry adsorption filter tank 201 , and a second end of the second series pipeline is communicated with a third gas delivery pipeline on another first dry adsorption filter tank 201 .

[0137] In some embodiments, the second series pipeline includes, but is not limited to, a stainless steel pipe.

[0138] In some embodiments, the number of second series pipelines matches the number of first dry adsorption filter canisters 201. It should be understood that the number of second series pipelines is not less than the number of first dry adsorption filter canisters 201. For example, if there are three first dry adsorption filter canisters 201, then there may be three second series pipelines (i.e., the first end of each second series pipeline is connected to a first dry adsorption filter canister 201, and the second end of each second series pipeline is connected to the remaining two first dry adsorption filter canisters 201). Alternatively, there may be six second series pipelines (i.e., the first end of each second series pipeline is connected to only one first dry adsorption filter canister 201, and the second end of each second series pipeline is connected to only one first dry adsorption filter canister 201).

[0139] Furthermore, the second mixed exhaust gas filter component 200 further includes at least one second pressure relief pipeline, wherein a first end of the second pressure relief pipeline is connected to the third gas delivery pipeline, and a second end of the second pressure relief pipeline is connected to the fourth gas delivery pipeline for pressure relief.

[0140] In some embodiments, the second pressure relief line includes but is not limited to a stainless steel pipe.

[0141] In some embodiments, the number of the second pressure relief pipelines matches the number of the first dry adsorption filter tanks 201. It should be understood that the number of the second pressure relief pipelines is the same as the number of the first dry adsorption filter tanks 201.

[0142] Furthermore, the second mixed exhaust gas filter component 200 further includes at least one fifth on-off valve 202 and at least one sixth on-off valve 203. The fifth on-off valve 202 is disposed in the third gas delivery pipeline to control the flow of gas therethrough, while the sixth on-off valve 203 is disposed in the fourth gas delivery pipeline to control the flow of gas therethrough.

[0143] Specifically, the fifth switch valve 202 is a three-way valve structure and is disposed at the connection point between the second gas input element and the second series pipeline, that is, the fifth switch valve 202 is connected to the second end (ie, the output end) of the second series pipeline.

[0144] In some embodiments, the fifth switching valve 202 includes but is not limited to a diaphragm valve.

[0145] In some embodiments, the number of the fifth switch valves 202 matches the number of the third gas delivery pipelines. It should be understood that the number of the fifth switch valves 202 is the same as the number of the third gas delivery pipelines.

[0146] In some embodiments, the sixth switch valve 203 includes but is not limited to a diaphragm valve.

[0147] In some embodiments, the number of the sixth switch valves 203 matches the number of the fourth gas delivery pipelines. It should be understood that the number of the sixth switch valves 203 is the same as the number of the fourth gas delivery pipelines.

[0148] Furthermore, the second mixed exhaust gas filtering component 200 further includes at least one seventh switch valve 204. The seventh switch valve 204 is disposed in the second series pipeline to control the flow of the second series pipeline.

[0149] Generally, the seventh switch valve 204 is disposed at the first end (ie, the input end) of the second series pipeline.

[0150] In some embodiments, the seventh switching valve 204 includes but is not limited to a diaphragm valve.

[0151] In some embodiments, the number of the seventh switch valves 204 matches the number of the second series pipelines. It should be understood that the number of the seventh switch valves 204 is the same as the number of the second series pipelines.

[0152] Furthermore, the second mixed exhaust gas filtering component 200 further includes at least one eighth switch valve 205. The eighth switch valve 205 is provided in the second pressure relief pipeline to control the flow of the second pressure relief pipeline.

[0153] In some embodiments, the eighth switching valve 205 includes but is not limited to a diaphragm valve.

[0154] In some embodiments, the number of the eighth switch valves 205 matches the number of the second pressure relief lines. It should be understood that the number of the eighth switch valves 205 is the same as the number of the second pressure relief lines.

[0155] Furthermore, the second mixed exhaust gas filter component 200 further includes at least one second pressure sensor 206 . The second pressure sensor 206 is in communication with the first dry adsorption filter tank 201 and is used to monitor the pressure inside the first dry adsorption filter tank 201 .

[0156] In some embodiments, the second pressure sensor 206 includes, but is not limited to, a pressure sensor.

[0157] In some embodiments, the number of the second pressure sensors 206 matches the number of the first dry adsorption filter canisters 201. It should be understood that the number of the second pressure sensors 206 is the same as the number of the first dry adsorption filter canisters 201.

[0158] Furthermore, the second mixed exhaust gas filter component 200 further includes at least one second temperature sensor 207 . The second temperature sensor 207 is in communication with the first dry adsorption filter tank 201 and is used to monitor the temperature inside the first dry adsorption filter tank 201 .

[0159] In some embodiments, the second temperature sensor 207 includes but is not limited to a temperature sensor.

[0160] In some embodiments, the number of the second temperature sensors 207 matches the number of the first dry adsorption filter canisters 201. It should be understood that the number of the second temperature sensors 207 is the same as the number of the first dry adsorption filter canisters 201.

[0161] like Figure 4 As shown, the recovery component 300 includes a fifth gas delivery pipeline and a steel cylinder 301. The first end of the fifth gas delivery pipeline is connected to the first mixed exhaust gas filter component 100 and / or the second mixed exhaust gas filter component 200 for delivering hydrogen; the steel cylinder 301 is connected to the second end of the fifth gas delivery pipeline for storing hydrogen.

[0162] Specifically, the first end of the fifth gas delivery pipeline is connected to the second end of the second gas delivery pipeline (corresponding to method (1)) and / or the second end of the fourth gas delivery pipeline (corresponding to method (2)).

[0163] In some embodiments, the fifth gas delivery pipeline includes but is not limited to a stainless steel pipe.

[0164] In some embodiments, the cylinder tank 301 includes but is not limited to a cylinder.

[0165] The method of using this embodiment is described using method (1) as an example, as follows:

[0166] Open the first on-off valve 102 to connect the upstream semiconductor process equipment to the wet adsorption filter tank 101 to remove hydrogen chloride and trichlorosilane in the semiconductor epitaxial gas;

[0167] Open the second on-off valve 103 and the fifth on-off valve 202 to connect the wet adsorption filter tank 101 with the first dry adsorption filter tank 201 to remove phosphine and diborane from the semiconductor epitaxial gas;

[0168] Open the sixth on-off valve 203, the ninth on-off valve 302, and the tenth on-off valve 303 to connect the first dry adsorption filter tank 201 with the steel cylinder 301, so that the hydrogen processed by the wet gas filter tank and the first dry adsorption filter tank 201 is stored in the steel cylinder 301;

[0169] It should be noted that, when the semiconductor epitaxial gas needs to pass through multiple wet adsorption filter tanks 101 for multi-stage processing, the third switch valve 104 is opened so that the multiple wet adsorption filter tanks 101 are connected in series;

[0170] It should be noted that when the internal pressure of the wet adsorption filter tank 101 monitored by the first pressure sensor 106 exceeds a threshold value, the fourth switch valve 105 is opened to release the pressure of the wet adsorption filter tank 101;

[0171] It should be noted that, when the semiconductor epitaxial gas needs to pass through multiple first dry adsorption filter tanks 201 for multi-stage processing, the seventh switch valve 204 is opened so that the multiple first dry adsorption filter tanks 201 are connected in series;

[0172] It should be noted that when the internal pressure of the first dry adsorption filter canister 201 monitored by the second pressure sensor 206 exceeds a threshold, the eighth switch valve 205 is opened to release the pressure of the first dry adsorption filter canister 201 .

[0173] The method of using method (2) is basically the same as that of using method (1), with only the processing order being different, which will not be described here.

[0174] The advantage of this embodiment is that by connecting the upstream semiconductor process equipment with the first mixed exhaust gas filter component and the second mixed exhaust gas filter component, and the order in which the first mixed exhaust gas filter component and the second mixed exhaust gas filter component are connected can be arbitrarily arranged according to actual needs, impurities such as hydrogen chloride, trichlorosilane, phosphine, diborane, etc. in the semiconductor epitaxial gas can be removed and hydrogen can be obtained, and then the semiconductor epitaxial gas can be recycled and purified to meet emission requirements.

[0175] Example 2

[0176] This embodiment is a variation of the first embodiment. The main difference between this embodiment and the first embodiment is that the mixed exhaust gas treatment device further includes a third mixed exhaust gas filter component 400 .

[0177] like Figure 5 As shown, the mixed exhaust gas treatment equipment further includes a third mixed exhaust gas filter component 400. The third mixed exhaust gas filter component 400 is respectively connected to the upstream semiconductor process equipment and / or the first mixed exhaust gas filter component 100 and / or the second mixed exhaust gas filter component 200 and / or the recovery component 300, and is used to filter the semiconductor epitaxial gas to remove arsine.

[0178] It should be noted that the connection sequence between the upstream semiconductor process equipment, the first mixed exhaust gas filter component 100, the second mixed exhaust gas filter component 200, and the third mixed exhaust gas filter component 400 in the present invention can be set according to the processing requirements of different gases, including the following methods, according to the gas flow order:

[0179] (1) Upstream semiconductor process equipment → first mixed exhaust gas filter component 100 → second mixed exhaust gas filter component 200 → third mixed exhaust gas filter component 400 → recovery component 300;

[0180] (2) Upstream semiconductor process equipment → first mixed exhaust gas filter component 100 → third mixed exhaust gas filter component 400 → second mixed exhaust gas filter component 200 → recovery component 300;

[0181] (3) Upstream semiconductor process equipment → second mixed exhaust gas filter component 200 → first mixed exhaust gas filter component 100 → third mixed exhaust gas filter component 400 → recovery component 300;

[0182] (4) Upstream semiconductor process equipment → second mixed exhaust gas filter component 200 → third mixed exhaust gas filter component 400 → first mixed exhaust gas filter component 100 → recovery component 300;

[0183] (5) Upstream semiconductor process equipment → third mixed exhaust gas filter component 400 → first mixed exhaust gas filter component 100 → second mixed exhaust gas filter component 200 → recovery component 300;

[0184] (6) Upstream semiconductor process equipment → third mixed exhaust gas filtering component 400 → second mixed exhaust gas filtering component 200 → first mixed exhaust gas filtering component 100 → recovery component 300.

[0185] In the present invention, method (1) is taken as an example for explanation.

[0186] like Figure 6As shown, the third mixed exhaust gas filter component 400 includes at least one seventh gas delivery pipeline, at least one second dry adsorption filter tank 401, and at least one eighth gas delivery pipeline. The first end of the seventh gas delivery pipeline is connected to the upstream semiconductor process equipment and / or the first mixed exhaust gas filter component 100 and / or the second mixed exhaust gas filter component 200, and is used to deliver semiconductor epitaxial gas; the second dry adsorption filter tank 401 is connected to the second end of the seventh gas delivery pipeline, and is used to filter the semiconductor epitaxial gas to remove arsine; the first end of the eighth gas delivery pipeline is connected to the second dry adsorption filter tank 401, and the second end of the eighth gas delivery pipeline is connected to the first mixed exhaust gas filter component 100 and / or the second mixed exhaust gas filter component 200 and / or the recovery component 300, and is used to deliver the semiconductor epitaxial gas processed by the second dry adsorption filter tank 401.

[0187] Specifically, the seventh gas delivery pipeline is connected to the fourth gas delivery pipeline (corresponding to mode (1) and mode (4)) and / or is connected to the second gas delivery pipeline (corresponding to mode (2) and mode (3)); the eighth gas delivery pipeline is connected to the first gas delivery pipeline (corresponding to mode (4) and mode (5)) and / or is connected to the third gas delivery pipeline (corresponding to mode (2) and mode (6)).

[0188] In some embodiments, the seventh gas delivery pipeline includes but is not limited to a stainless steel pipe.

[0189] In some embodiments, the second dry adsorption filter canister 401 includes but is not limited to an adsorption filter canister.

[0190] In some embodiments, the eighth gas delivery pipeline includes but is not limited to a stainless steel pipe.

[0191] In some of the embodiments, the third mixed exhaust gas filter component 400 includes several seventh gas delivery pipelines, several second dry adsorption filter tanks 401, and several eighth gas delivery pipelines, and the several seventh gas delivery pipelines, several second dry adsorption filter tanks 401, and several eighth gas delivery pipelines correspond one to one.

[0192] It should be noted that the number of the second dry-type adsorption filter tanks 401 is two, and the two second dry-type adsorption filter tanks 401 are connected to each other in series and in parallel.

[0193] In some embodiments, the number of the second dry adsorption filter tanks 401 may be 3, 4, etc., that is, the number of the second dry adsorption filter tanks 401 may be set according to actual processing requirements, and no excessive restrictions are imposed herein.

[0194] It should be noted that when the two second dry adsorption filter tanks 401 are connected in parallel, the two second dry adsorption filter tanks 401 can realize separate treatment of semiconductor epitaxial gas; in addition, when gaps appear during the treatment of semiconductor epitaxial gas, the two second dry adsorption filter tanks 401 can realize uninterrupted operation during the gas treatment process.

[0195] It should be noted that when two second dry adsorption filter tanks 401 are connected in series, the two second dry adsorption filter tanks 401 can realize multi-stage treatment of semiconductor epitaxial gas, that is, the semiconductor epitaxial gas processed by one second dry adsorption filter tank 401 can be passed into another second dry adsorption filter tank 401 for secondary treatment.

[0196] In some embodiments, the number of the seventh gas delivery pipelines matches the number of the second dry adsorption filter canisters 401. It should be understood that the number of the seventh gas delivery pipelines is the same as the number of the second dry adsorption filter canisters 401.

[0197] In some embodiments, the number of the eighth gas delivery pipelines matches the number of the second dry adsorption filter canisters 401. It should be understood that the number of the eighth gas delivery pipelines is the same as the number of the second dry adsorption filter canisters 401.

[0198] Furthermore, the third mixed exhaust gas filter component 400 further includes at least one third series pipeline, wherein the first end and the second end of the plurality of third series pipelines are respectively connected to the two second dry adsorption filter tanks 401 for connecting the two second dry adsorption filter tanks 401 in series.

[0199] Specifically, a first end of the third series pipeline is communicated with one second dry adsorption filter tank 401 , and a second end of the third series pipeline is communicated with the seventh delivery pipeline on another second dry adsorption filter tank 401 .

[0200] In some of the embodiments, the third series pipe includes, but is not limited to, a stainless steel pipe.

[0201] In some embodiments, the number of third series pipelines matches the number of second dry adsorption filter canisters 401. It should be understood that the number of third series pipelines is not less than the number of second dry adsorption filter canisters 401. For example, if there are three second dry adsorption filter canisters 401, then there may be three third series pipelines (i.e., the first end of each third series pipeline is connected to a second dry adsorption filter canister 401, and the second end of each third series pipeline is connected to the remaining two second dry adsorption filter canisters 401). Alternatively, there may be six third series pipelines (i.e., the first end of each third series pipeline is connected to only one second dry adsorption filter canister 401, and the second end of each third series pipeline is connected to only one second dry adsorption filter canister 401).

[0202] Furthermore, the third mixed exhaust gas filter component 400 further includes at least one third pressure relief pipeline, wherein a first end of the third pressure relief pipeline is connected to the seventh gas delivery pipeline, and a second end of the third pressure relief pipeline is connected to the eighth gas delivery pipeline for pressure relief.

[0203] In some embodiments, the third pressure relief line includes but is not limited to a stainless steel pipe.

[0204] In some embodiments, the number of the third pressure relief pipelines matches the number of the second dry adsorption filter tanks 401. It should be understood that the number of the third pressure relief pipelines is the same as the number of the second dry adsorption filter tanks 401.

[0205] Furthermore, the third mixed exhaust gas filter component 400 further includes at least one eleventh on-off valve 402 and at least one twelfth on-off valve 403. The eleventh on-off valve 402 is disposed in the seventh gas delivery pipeline to control the flow of gas therethrough, while the twelfth on-off valve 403 is disposed in the eighth gas delivery pipeline to control the flow of gas therethrough.

[0206] Specifically, the eleventh switch valve 402 is a three-way valve structure and is disposed at the connection point between the third gas input element and the third series pipeline, that is, the eleventh switch valve 402 is connected to the second end (ie, the output end) of the third series pipeline.

[0207] In some embodiments, the eleventh switching valve 402 includes but is not limited to a diaphragm valve.

[0208] In some embodiments, the number of the eleventh switch valve 402 matches the number of the seventh gas delivery pipeline. It should be understood that the number of the eleventh switch valve 402 is the same as the number of the seventh gas delivery pipeline.

[0209] In some embodiments, the twelfth switch valve 403 includes but is not limited to a diaphragm valve.

[0210] In some embodiments, the number of the twelfth switch valves 403 matches the number of the eighth gas delivery pipelines. It should be understood that the number of the twelfth switch valves 403 is the same as the number of the eighth gas delivery pipelines.

[0211] Furthermore, the third mixed exhaust gas filtering component 400 further includes at least one thirteenth switch valve 404. The thirteenth switch valve 404 is disposed in the third series pipeline and is used to control the flow of the third series pipeline.

[0212] Generally, the thirteenth switch valve 404 is disposed at the first end (ie, the input end) of the third series pipeline.

[0213] In some embodiments, the thirteenth switch valve 404 includes but is not limited to a diaphragm valve.

[0214] In some embodiments, the number of the thirteenth switch valves 404 matches the number of the third series pipelines. It should be understood that the number of the thirteenth switch valves 404 is the same as the number of the third series pipelines.

[0215] Furthermore, the third mixed exhaust gas filtering component 400 further includes at least one fourteenth switch valve 405. The fourteenth switch valve 405 is disposed in the third pressure relief pipeline and is used to control the flow of the third pressure relief pipeline.

[0216] In some embodiments, the fourteenth switching valve 405 includes but is not limited to a diaphragm valve.

[0217] In some embodiments, the number of the fourteenth switch valves 405 matches the number of the third pressure relief lines. It should be understood that the number of the fourteenth switch valves 405 is the same as the number of the third pressure relief lines.

[0218] Furthermore, the third mixed exhaust gas filter component 400 further includes at least one third pressure sensor 406 . The third pressure sensor 406 is in communication with the second dry adsorption filter tank 401 and is used to monitor the pressure inside the second dry adsorption filter tank 401 .

[0219] In some embodiments, the third pressure sensor 406 includes, but is not limited to, a pressure sensor.

[0220] In some embodiments, the number of the third pressure sensors 406 matches the number of the second dry adsorption filter canisters 401. It should be understood that the number of the third pressure sensors 406 is the same as the number of the second dry adsorption filter canisters 401.

[0221] Furthermore, the third mixed exhaust gas filter component 400 further includes at least one third temperature sensor 407 . The third temperature sensor 407 is in communication with the second dry adsorption filter tank 401 and is used to monitor the temperature inside the second dry adsorption filter tank 401 .

[0222] In some embodiments, the third temperature sensor 407 includes but is not limited to a temperature sensor.

[0223] In some embodiments, the number of the third temperature sensors 407 matches the number of the second dry adsorption filter canisters 401. It should be understood that the number of the third temperature sensors 407 is the same as the number of the second dry adsorption filter canisters 401.

[0224] The method of using this embodiment is described using method (1) as an example, as follows:

[0225] Open the first on-off valve 102 to connect the upstream semiconductor process equipment to the wet adsorption filter tank 101 to remove hydrogen chloride and trichlorosilane in the semiconductor epitaxial gas;

[0226] Open the second on-off valve 103 and the fifth on-off valve 202 to connect the wet adsorption filter tank 101 with the first dry adsorption filter tank 201 to remove phosphine and diborane from the semiconductor epitaxial gas;

[0227] Open the sixth on-off valve 203 and the eleventh on-off valve 402 to connect the first dry adsorption filter tank 201 with the second dry adsorption filter tank 401 to remove arsine in the semiconductor epitaxial gas;

[0228] Open the twelfth on-off valve 403, the ninth on-off valve 302, and the tenth on-off valve 303 to connect the second dry adsorption filter tank 401 with the steel cylinder 301, so that the hydrogen obtained by the wet adsorption filter tank 101, the first dry adsorption filter tank 201, and the second dry adsorption filter tank 401 is stored in the steel cylinder 301;

[0229] It should be noted that, when the semiconductor epitaxial gas needs to pass through multiple wet adsorption filter tanks 101 for multi-stage processing, the third switch valve 104 is opened so that the multiple wet adsorption filter tanks 101 are connected in series;

[0230] It should be noted that when the internal pressure of the wet adsorption filter tank 101 monitored by the first pressure sensor 106 exceeds a threshold value, the fourth switch valve 105 is opened to release the pressure of the wet adsorption filter tank 101;

[0231] It should be noted that, when the semiconductor epitaxial gas needs to pass through multiple first dry adsorption filter tanks 201 for multi-stage processing, the seventh switch valve 204 is opened so that the multiple first dry adsorption filter tanks 201 are connected in series;

[0232] It should be noted that when the internal pressure of the first dry adsorption filter tank 201 monitored by the second pressure sensor 206 exceeds a threshold, the eighth switch valve 205 is opened to release the pressure of the first dry adsorption filter tank 201;

[0233] It should be noted that, when the semiconductor epitaxial gas needs to pass through multiple second dry adsorption filter tanks 401 for multi-stage processing, the thirteenth switch valve 404 is opened so that the multiple second dry adsorption filter tanks 401 are connected in series;

[0234] It should be noted that when the internal pressure of the second dry adsorption filter canister 401 monitored by the third pressure sensor 406 exceeds a threshold, the fourteenth switch valve 405 is opened to release the pressure of the second dry adsorption filter canister 401 .

[0235] The usage of methods (2) to (6) is basically the same as that of method (1), with only the processing order being different, which will not be described here.

[0236] The advantage of this embodiment is that by connecting the upstream semiconductor process equipment with the first mixed exhaust gas filter component, the second mixed exhaust gas filter component, and the third mixed exhaust gas filter component, and the order in which the first mixed exhaust gas filter component, the second mixed exhaust gas filter component, and the third mixed exhaust gas filter component are connected can be arbitrarily arranged according to actual needs, so that impurities such as hydrogen chloride, trichlorosilane, phosphine, diborane, and arsine in the semiconductor epitaxial gas can be removed and hydrogen can be obtained, and then the semiconductor epitaxial gas can be recycled and the semiconductor epitaxial gas can be purified to meet emission requirements.

[0237] Example 3

[0238] This embodiment is a variation of Embodiments 1-2. The main difference between this embodiment and Embodiments 1-2 is that the mixed exhaust gas treatment equipment further includes a gas-liquid separation component 500 .

[0239] like Figure 7 As shown, the mixed exhaust gas treatment device further includes a gas-liquid separation component 500. The gas-liquid separation component 500 is disposed downstream of the first mixed exhaust gas filter component 100 and is used to perform gas-liquid separation on the semiconductor epitaxial gas processed by the first mixed exhaust gas filter component 100.

[0240] In this embodiment, the mixed exhaust gas treatment equipment includes the following methods, in the order of gas flow:

[0241] (1) Upstream semiconductor process equipment → first mixed exhaust gas filter component 100 → gas-liquid separation component 500 → second mixed exhaust gas filter component 200 → third mixed exhaust gas filter component 400 → recovery component 300;

[0242] (2) Upstream semiconductor process equipment → first mixed exhaust gas filter component 100 → gas-liquid separation component 500 → third mixed exhaust gas filter component 400 → second mixed exhaust gas filter component 200 → recovery component 300;

[0243] (3) Upstream semiconductor process equipment → second mixed exhaust gas filter component 200 → first mixed exhaust gas filter component 100 → gas-liquid separation component 500 → third mixed exhaust gas filter component 400 → recovery component 300;

[0244] (4) Upstream semiconductor process equipment → second mixed exhaust gas filter component 200 → third mixed exhaust gas filter component 400 → first mixed exhaust gas filter component 100 → gas-liquid separation component 500 → recovery component 300;

[0245] (5) Upstream semiconductor process equipment → third mixed exhaust gas filter component 400 → first mixed exhaust gas filter component 100 → gas-liquid separation component 500 → second mixed exhaust gas filter component 200 → recovery component 300;

[0246] (6) Upstream semiconductor process equipment → third mixed exhaust gas filter component 400 → second mixed exhaust gas filter component 200 → first mixed exhaust gas filter component 100 → gas-liquid separation component 500 → exhaust recovery component 300.

[0247] In the present invention, method (1) is taken as an example for explanation.

[0248] Specifically, the gas-liquid separation component 500 includes a ninth gas delivery pipeline, a gas-liquid separator, a tenth gas delivery pipeline, and a liquid delivery pipeline. The first end of the ninth gas delivery pipeline is connected to the first mixed exhaust gas filter component 100 for delivering semiconductor epitaxial gas processed by the first mixed exhaust gas filter component 100; the gas-liquid separator is connected to the second end of the ninth gas delivery pipeline for performing gas-liquid separation on the semiconductor epitaxial gas processed by the first mixed exhaust gas filter component 100; the first end of the tenth gas delivery pipeline is connected to the gas-liquid separator, and the second end of the tenth gas delivery pipeline is connected to the second mixed exhaust gas filter component 200 and / or the recovery component 300 for delivering gas; the first end of the liquid delivery pipeline is connected to the gas-liquid separator, and the second end of the liquid delivery pipeline is connected to the first mixed exhaust gas filter component 100 for delivering liquid.

[0249] Specifically, the first end of the ninth gas delivery pipeline is connected to the second end of the second gas delivery pipeline; the second end of the tenth gas delivery pipeline is connected to the first end of the third gas delivery pipeline (corresponding to mode (1) and mode (5)) and / or the first end of the seventh gas delivery pipeline (corresponding to mode (2) and mode (3)) and / or the fifth gas delivery pipeline (corresponding to mode (4) and mode (6)); the second end of the liquid delivery pipeline is connected to the first gas delivery pipeline.

[0250] In some embodiments, the ninth gas delivery pipeline includes but is not limited to a stainless steel pipe.

[0251] In some embodiments, the gas-liquid separator includes but is not limited to a centrifugal gas-liquid separator.

[0252] In some embodiments, the tenth gas delivery pipeline includes but is not limited to a stainless steel pipe.

[0253] In some embodiments, the liquid delivery pipeline includes but is not limited to a stainless steel pipe.

[0254] The method of using this embodiment is as follows:

[0255] The semiconductor epitaxial gas treated by the wet adsorption filter tank 101 contains a large amount of water vapor. The semiconductor epitaxial gas treated by the wet adsorption filter tank 101 is introduced into the gas-liquid separator through the ninth gas delivery pipeline to filter the water vapor therein to obtain dry gas and liquid. The dry gas is delivered to the first dry adsorption filter tank 201 or the second dry adsorption filter tank 401 or the cylinder tank 301 through the tenth gas delivery pipeline, and the liquid is delivered to the first gas delivery pipeline through the liquid delivery pipeline, and the liquid is delivered back to the wet adsorption filter tank 101 for further treatment.

[0256] The advantage of this embodiment is that by connecting the gas-liquid separation component downstream of the first mixed exhaust gas filter component, the water vapor contained in the semiconductor epitaxial gas treated by the first mixed exhaust gas filter component can be separated, and the separated liquid can be circulated to the first mixed exhaust gas filter component for circulation treatment, thereby improving the effect of semiconductor epitaxial gas treatment.

[0257] Example 4

[0258] This embodiment is a variation of Embodiments 1 to 3. The main difference between this embodiment and Embodiments 1 to 3 is that the mixed exhaust gas treatment equipment further includes an emission component 600 .

[0259] like Figure 7 As shown, the mixed exhaust gas treatment device further includes an exhaust component 600. The exhaust component 600 is communicated with the recovery component 300 for exhausting the exhaust gas.

[0260] like Figure 8 As shown, the exhaust component 600 includes at least one sixth gas delivery pipeline, at least one vacuum pump 601, and at least one exhaust pipeline. The sixth gas delivery pipeline is connected to the recovery component 300 at both ends for delivering hydrogen. The vacuum pump 601 is provided in the sixth gas delivery pipeline to create a vacuum negative pressure in the sixth gas delivery pipeline. The first end of the exhaust pipeline is connected to the vacuum pump 601, and the second end of the exhaust pipeline is connected to the exhaust gas treatment equipment for delivering exhaust gas.

[0261] In some embodiments, the sixth gas delivery pipeline includes but is not limited to a stainless steel pipe.

[0262] It should be noted that the number of the sixth gas delivery pipelines is two, and the two sixth gas delivery pipelines are arranged in parallel with the fifth gas delivery pipeline.

[0263] In some embodiments, the number of the sixth gas delivery pipelines may be 1, 3, etc., that is, the number of the sixth gas delivery pipelines may be set according to actual needs.

[0264] In some of these embodiments, vacuum pump 601 includes but is not limited to vacuum pump 601 .

[0265] In some embodiments, the number of vacuum pumps 601 matches the number of sixth gas delivery pipelines. It should be understood that the number of vacuum pumps 601 is the same as the number of sixth gas delivery pipelines.

[0266] In some of these embodiments, the discharge line includes, but is not limited to, a stainless steel pipe.

[0267] In some embodiments, the number of the exhaust pipelines matches the number of the sixth gas delivery pipelines. It should be understood that the number of the exhaust pipelines is the same as the number of the sixth gas delivery pipelines.

[0268] Furthermore, the exhaust component 600 includes at least one fifteenth on-off valve 602 and at least one sixteenth on-off valve 603. The fifteenth on-off valve 602 is disposed in the sixth gas delivery pipeline to control the flow of gas through the sixth gas delivery pipeline; the sixteenth on-off valve 603 is disposed in the exhaust pipeline to control the flow of gas between the exhaust pipeline and the exhaust gas treatment equipment.

[0269] In some embodiments, the fifteenth switching valve 602 includes but is not limited to a diaphragm valve.

[0270] In some embodiments, the number of the fifteenth switch valves 602 matches the number of the sixth gas delivery pipelines. It should be understood that the number of the fifteenth switch valves 602 is the same as the number of the sixth gas delivery pipelines.

[0271] In some embodiments, the sixteenth switch valve 603 includes but is not limited to a diaphragm valve.

[0272] In some embodiments, the number of the sixteenth switch valves 603 matches the number of the discharge pipelines. It should be understood that the number of the sixteenth switch valves 603 is the same as the number of the discharge pipelines.

[0273] The method of using this embodiment is as follows:

[0274] When the delivery pressure in the fifth gas delivery pipeline is insufficient, the vacuum pump 601 and the fifteenth on-off valve 602 are opened, so that all the hydrogen obtained by the wet adsorption filter tank 101, the first dry adsorption filter tank 201, and the second dry adsorption filter tank 401 can be delivered to the cylinder tank 301;

[0275] When the entire equipment needs to discharge exhaust gas and the wet adsorption filter tank 101, the first dry adsorption filter tank 201, and the second dry adsorption filter tank 401 are depressurized, the fourth switch valve 105, the eighth switch valve 205, the fourteenth switch valve 405, and the sixteenth switch valve 603 are opened to achieve connectivity between the wet adsorption filter tank 101, the first dry adsorption filter tank 201, the second dry adsorption filter tank 401, and the pipeline and the discharge pipeline.

[0276] The advantage of this embodiment is that by connecting the discharge unit with the recovery unit, when the delivery pressure in the fifth gas delivery pipeline is insufficient, the gas flow in the fifth gas delivery pipeline can be increased, thereby improving the gas delivery efficiency.

[0277] Example 5

[0278] This embodiment is a variation of Embodiments 1 to 4. The main difference between this embodiment and Embodiments 1 to 4 is that the mixed exhaust gas treatment equipment further includes a purge component 700 .

[0279] like Figure 9 As shown, the mixed exhaust gas treatment device further includes a purge component 700. The purge component 700 is respectively connected to the first mixed exhaust gas filter component 100, the second mixed exhaust gas filter component 200, and the third mixed exhaust gas filter component 400 for purging the entire device.

[0280] like Figure 10As shown, the purge component 700 includes a first purge gas delivery pipeline, a second purge gas delivery pipeline, a third purge gas delivery pipeline, a fourth purge gas delivery pipeline, a fifth purge gas delivery pipeline, and a sixth purge gas delivery pipeline. The first end of the first purge gas delivery pipeline is connected to the purge gas source, and the second end of the first purge gas delivery pipeline is connected to the first mixed exhaust gas filter component 100 for delivering purge gas; the first end of the second purge gas delivery pipeline is connected to the first mixed exhaust gas filter component 100, and the second end of the second purge gas delivery pipeline is connected to the exhaust component 600 for delivering exhaust gas; the first end of the third purge gas delivery pipeline is connected to the purge gas source, and the second end of the third purge gas delivery pipeline is connected to the second mixed exhaust gas filter component 200 for delivering purge gas. ; The first end of the fourth purge gas delivery pipeline is connected to the second mixed exhaust gas filter component 200, and the second end of the fourth purge gas delivery pipeline is connected to the exhaust component 600 for conveying exhaust gas; the first end of the fifth purge gas delivery pipeline is connected to the purge gas source, and the second end of the fifth purge gas delivery pipeline is connected to the third mixed exhaust gas filter component 400 for conveying purge gas; the first end of the sixth purge gas delivery pipeline is connected to the third mixed exhaust gas filter component 400, and the second end of the sixth purge gas delivery pipeline is connected to the exhaust component 600 for conveying exhaust gas.

[0281] Specifically, the second end of the first purge gas delivery pipeline is connected to the first gas delivery pipeline; the first end of the second purge gas delivery pipeline is connected to the second gas delivery pipeline; the second end of the third purge gas delivery pipeline is connected to the third gas delivery pipeline; the first end of the fourth purge gas delivery pipeline is connected to the fourth gas delivery pipeline; the second end of the fifth purge gas delivery pipeline is connected to the seventh gas delivery pipeline; and the first end of the sixth purge gas delivery pipeline is connected to the eighth gas delivery pipeline.

[0282] In some embodiments, the first purge gas delivery pipeline includes but is not limited to a stainless steel pipe.

[0283] In some embodiments, the second purge gas delivery pipeline includes but is not limited to a stainless steel pipe.

[0284] In some embodiments, the third purge gas delivery pipeline includes but is not limited to a stainless steel pipe.

[0285] In some embodiments, the fourth purge gas delivery pipeline includes but is not limited to a stainless steel pipe.

[0286] In some embodiments, the fifth purge gas delivery line includes but is not limited to a stainless steel pipe.

[0287] In some embodiments, the sixth purge gas delivery line includes but is not limited to a stainless steel pipe.

[0288] Furthermore, the purge component 700 further includes a seventeenth on-off valve 701, an eighteenth on-off valve 702, a nineteenth on-off valve 703, a twentieth on-off valve 704, a twenty-first on-off valve 705, and a twenty-second on-off valve 706. The seventeenth on-off valve 701 is disposed in the first purge gas delivery pipeline to control the flow of the first purge gas delivery pipeline; the eighteenth on-off valve 702 is disposed in the second purge gas delivery pipeline to control the flow of the second purge gas delivery pipeline; the nineteenth on-off valve 703 is disposed in the third purge gas delivery pipeline to control the flow of the third purge gas delivery pipeline; the twentieth on-off valve 704 is disposed in the fourth purge gas delivery pipeline to control the flow of the fourth purge gas delivery pipeline; the twenty-first on-off valve 705 is disposed in the fifth purge gas delivery pipeline to control the flow of the fifth purge gas delivery pipeline; and the twenty-second on-off valve 706 is disposed in the sixth purge gas delivery pipeline to control the flow of the sixth purge gas delivery pipeline.

[0289] In some embodiments, the seventeenth switching valve 701 includes but is not limited to a diaphragm valve.

[0290] In some embodiments, the eighteenth switching valve 702 includes but is not limited to a diaphragm valve.

[0291] In some embodiments, the nineteenth switch valve 703 includes but is not limited to a diaphragm valve.

[0292] In some embodiments, the twentieth switch valve 704 includes but is not limited to a diaphragm valve.

[0293] In some embodiments, the twenty-first switching valve 705 includes but is not limited to a diaphragm valve.

[0294] In some embodiments, the twenty-second switching valve 706 includes but is not limited to a diaphragm valve.

[0295] The method of using this embodiment is as follows:

[0296] When it is necessary to purge the entire equipment, open the first switch valve 102, the second switch valve 103, the fifth switch valve 202, the sixth switch valve 203, the eleventh switch valve 402, the twelfth switch valve 403, the seventeenth switch valve 701, the eighteenth switch valve 702, the nineteenth switch valve 703, the twentieth switch valve 704, the twenty-first switch valve 705 and the twenty-second switch valve 706, so that the purge gas source is connected to the wet adsorption filter tank 101, the first dry adsorption filter tank 201, the second dry adsorption filter tank 401 and the exhaust gas treatment equipment respectively, so that the pipelines and equipment can be purged to ensure the cleanliness of the pipelines and equipment.

[0297] The advantage of this embodiment is that by connecting the purge component to the first mixed exhaust gas filter component, the second mixed exhaust gas filter component, and the third mixed exhaust gas filter component respectively, the pipeline and the equipment can be purged to ensure the cleanliness of the pipeline and the equipment.

[0298] Example 6

[0299] This embodiment relates to a semiconductor process system in the present invention.

[0300] A semiconductor process system includes the mixed waste gas treatment equipment described in Examples 1 to 5.

[0301] Furthermore, the semiconductor process system also includes a purge gas source, upstream semiconductor process equipment, and exhaust gas treatment equipment. The purge gas source is connected to the first mixed exhaust gas filter component 100, the second mixed exhaust gas filter component 200, and the third mixed exhaust gas filter component 400, respectively; the upstream semiconductor process equipment can be connected to the first mixed exhaust gas filter component 100, the second mixed exhaust gas filter component 200, or the third mixed exhaust gas filter component 400; and the exhaust gas treatment equipment is connected to the exhaust component 600.

[0302] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0303] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the utility model patent. It should be noted that a person skilled in the art could make various modifications and improvements without departing from the spirit of the present application, all of which fall within the scope of protection of the present application. Therefore, the scope of protection of the present patent application shall be determined by the appended claims.

Claims

1. A mixed exhaust gas treatment device, characterized in that: include: a first mixed exhaust gas filtering component, the first mixed exhaust gas filtering component being in communication with an upstream semiconductor process device and configured to filter semiconductor epitaxial gas to remove hydrogen chloride and trichlorosilane; a second mixed exhaust gas filtering component, the second mixed exhaust gas filtering component being in communication with upstream semiconductor process equipment and / or the first mixed exhaust gas filtering component, and being configured to filter semiconductor epitaxial gas to remove phosphine and diborane; A recovery component is connected to the first mixed exhaust gas filter component and / or the second mixed exhaust gas filter component, and is used to recover hydrogen generated by the first mixed exhaust gas filter component and the second mixed exhaust gas filter component.

2. The mixed exhaust gas treatment equipment according to claim 1, characterized in that: The first mixed exhaust gas filtering component comprises: at least one first gas delivery pipeline, wherein a first end of the first gas delivery pipeline is in communication with an upstream semiconductor process equipment and / or the second mixed exhaust gas filter component, and is used for delivering semiconductor epitaxial gas; at least one wet adsorption filter tank, the wet adsorption filter tank being in communication with the second end of the first gas delivery pipeline and being used for filtering semiconductor epitaxial gas to remove hydrogen chloride and trichlorosilane; at least one second gas delivery pipeline, a first end of the second gas delivery pipeline being in communication with the wet adsorption filter tank, a second end of the second gas delivery pipeline being in communication with the second mixed exhaust gas filter component and / or the recovery component, for delivering semiconductor epitaxial gas processed by the wet adsorption filter tank; and / or The second mixed exhaust gas filter component includes: at least one third gas delivery pipeline, a first end of the third gas delivery pipeline being in communication with an upstream semiconductor process equipment and / or the first mixed exhaust gas filter component, for delivering semiconductor epitaxial gas; at least one first dry adsorption filter tank, the first dry adsorption filter tank being in communication with the second end of the third gas delivery pipeline and being used for filtering semiconductor epitaxial gas to remove phosphine and diborane; at least one fourth gas delivery pipeline, a first end of the fourth gas delivery pipeline being in communication with the first dry adsorption filter tank, a second end of the fourth gas delivery pipeline being in communication with the first mixed exhaust gas filter component and / or the recovery component, for delivering semiconductor epitaxial gas processed by the first dry adsorption filter tank; and / or The recycling parts include: a fifth gas delivery pipeline, a first end of which is in communication with the first mixed exhaust gas filter component and / or the second mixed exhaust gas filter component, and is configured to deliver hydrogen; A steel cylinder tank is connected to the second end of the fifth gas delivery pipeline and is used to store hydrogen.

3. The mixed exhaust gas treatment equipment according to claim 2, characterized in that: The first mixed exhaust gas filter component includes a plurality of the first gas delivery pipelines, a plurality of the wet adsorption filter canisters, and a plurality of the second gas delivery pipelines, and the plurality of the first gas delivery pipelines, the plurality of the wet adsorption filter canisters, and the plurality of the second gas delivery pipelines correspond to each other one by one; and / or The second mixed exhaust gas filter component includes several of the third gas delivery pipelines, several of the first dry adsorption filter tanks, and several of the fourth gas delivery pipelines. The several of the third gas delivery pipelines, several of the first dry adsorption filter tanks, and several of the fourth gas delivery pipelines correspond to each other one by one.

4. The mixed exhaust gas treatment equipment according to claim 2 or 3, characterized in that: The first mixed exhaust gas filtering component further comprises: at least one first series pipeline, wherein the first end and the second end of the first series pipeline are respectively connected to the two wet adsorption filter tanks, for connecting the two wet adsorption filter tanks in series; and / or The first mixed exhaust gas filtering component further comprises: At least one first pressure relief pipeline, a first end of the first pressure relief pipeline is connected to the first gas delivery pipeline, and a second end of the first pressure relief pipeline is connected to the second gas delivery pipeline for pressure relief; and / or The second mixed exhaust gas filter component further includes: at least one second series pipeline, wherein the first end and the second end of the second series pipeline are respectively connected to the two first dry adsorption filter tanks, for connecting the two first dry adsorption filter tanks in series; and / or The second mixed exhaust gas filter component further includes: At least one second pressure relief pipeline, a first end of the second pressure relief pipeline is connected to the third gas delivery pipeline, and a second end of the second pressure relief pipeline is connected to the fourth gas delivery pipeline for pressure relief.

5. The mixed exhaust gas treatment equipment according to claim 2, characterized in that: The first mixed exhaust gas filtering component further comprises: at least one first on-off valve, the first on-off valve being provided in the first gas delivery pipeline and being used to control the flow of the first gas delivery pipeline; and / or The first mixed exhaust gas filtering component further comprises: at least one second on-off valve, the second on-off valve being provided in the second gas delivery pipeline and being used to control the flow of the second gas delivery pipeline; and / or The first mixed exhaust gas filtering component further comprises: at least one first pressure sensor, the first pressure sensor being in communication with the wet adsorption filter canister and configured to monitor the pressure inside the wet adsorption filter canister; and / or The first mixed exhaust gas filtering component further comprises: at least one first temperature sensor, the first temperature sensor being in communication with the wet adsorption filter tank and configured to monitor the temperature inside the wet adsorption filter tank; and / or The second mixed exhaust gas filter component further includes: at least one fifth switch valve, the fifth switch valve being provided in the third gas delivery pipeline and being used to control the flow of the third gas delivery pipeline; and / or The second mixed exhaust gas filter component further includes: at least one sixth switch valve, the sixth switch valve being provided in the fourth gas delivery pipeline and being used to control the flow of the fourth gas delivery pipeline; and / or The second mixed exhaust gas filter component further includes: at least one second pressure sensor, the second pressure sensor being in communication with the first dry adsorption filter canister and configured to monitor the pressure inside the first dry adsorption filter canister; and / or The second mixed exhaust gas filter component further includes: at least one second temperature sensor, the second temperature sensor being in communication with the first dry adsorption filter tank and configured to monitor the temperature inside the first dry adsorption filter tank; The recycling components also include: at least one ninth switch valve, the ninth switch valve being provided in the fifth gas delivery pipeline and being used to control the flow of the fifth gas delivery pipeline; and / or The recycling components also include: At least one tenth switch valve is provided on the steel cylinder tank and is used to control the flow between the steel cylinder tank and the fifth gas delivery pipeline.

6. The mixed exhaust gas treatment equipment according to claim 4, characterized in that: The first mixed exhaust gas filtering component further comprises: at least one third switch valve, the third switch valve being disposed in the first series pipeline and being used to control the flow of the first series pipeline; and / or The first mixed exhaust gas filtering component further comprises: at least one fourth switch valve, the fourth switch valve being arranged in the first pressure relief pipeline and being used to control the flow of the first pressure relief pipeline; and / or The second mixed exhaust gas filter component further includes: at least one seventh switch valve, the seventh switch valve being disposed in the second series pipeline and being used to control the flow of the second series pipeline; and / or The second mixed exhaust gas filter component further includes: At least one eighth switch valve is provided in the second pressure relief pipeline, and is used to control the flow of the second pressure relief pipeline.

7. The mixed exhaust gas treatment equipment according to claim 1, characterized in that: Also includes: a third mixed exhaust gas filter component, the third mixed exhaust gas filter component being in communication with upstream semiconductor process equipment and / or the first mixed exhaust gas filter component and / or the second mixed exhaust gas filter component and the recovery component, and being used for filtering semiconductor epitaxial gas to remove arsine; and / or a gas-liquid separation component, the gas-liquid separation component being arranged downstream of the first mixed exhaust gas filtering component and being used for performing gas-liquid separation on the semiconductor epitaxial gas processed by the first mixed exhaust gas filtering component; and / or an exhaust component, the exhaust component being in communication with the recovery component and configured to discharge exhaust gas; and / or A purge component is connected to the first mixed exhaust gas filter component, the second mixed exhaust gas filter component, and the third mixed exhaust gas filter component respectively, and is used to purge the entire equipment.

8. The mixed exhaust gas treatment equipment according to claim 7, characterized in that: The third mixed exhaust gas filter component includes: at least one seventh gas delivery pipeline, a first end of the seventh gas delivery pipeline being in communication with an upstream semiconductor process equipment and / or the first mixed exhaust gas filter component and / or the second mixed exhaust gas filter component, for delivering semiconductor epitaxial gas; at least one second dry adsorption filter tank, the second dry adsorption filter tank being in communication with the second end of the seventh gas delivery pipeline and being used for filtering semiconductor epitaxial gas to remove arsine; at least one eighth gas delivery pipeline, a first end of the eighth gas delivery pipeline being in communication with the second dry adsorption filter tank, a second end of the eighth gas delivery pipeline being in communication with the first mixed exhaust gas filter component and / or the second mixed exhaust gas filter component and / or the recovery component, for delivering semiconductor epitaxial gas processed by the second dry adsorption filter tank; and / or The gas-liquid separation component comprises: a ninth gas delivery pipeline, a first end of which is in communication with the first mixed exhaust gas filter component and is used to deliver the semiconductor epitaxial gas processed by the first mixed exhaust gas filter component; a gas-liquid separator, the gas-liquid separator being in communication with the second end of the ninth gas delivery pipeline and being used for performing gas-liquid separation on the semiconductor epitaxial gas processed by the first mixed exhaust gas filtering component; a tenth gas delivery pipeline, wherein a first end of the tenth gas delivery pipeline is in communication with the gas-liquid separator, and a second end of the tenth gas delivery pipeline is in communication with the second mixed exhaust gas filtering component and / or the recovery component, for delivering gas; a liquid delivery pipeline, wherein a first end of the liquid delivery pipeline is in communication with the gas-liquid separator, and a second end of the liquid delivery pipeline is in communication with the first mixed exhaust gas filter component, for delivering liquid; and / or The discharge component includes: at least one sixth gas delivery pipeline, both ends of which are respectively connected to the recovery component and are used to deliver hydrogen; at least one vacuum pump, the vacuum pump being disposed in the sixth gas delivery pipeline and configured to form a vacuum negative pressure in the sixth gas delivery pipeline; at least one exhaust pipe, a first end of the exhaust pipe being connected to the vacuum pump, and a second end of the exhaust pipe being connected to an exhaust gas treatment device for conveying exhaust gas; and / or The purge component includes: a first purge gas delivery pipeline, wherein a first end of the first purge gas delivery pipeline is in communication with a purge gas source, and a second end of the first purge gas delivery pipeline is in communication with the first mixed exhaust gas filter component for delivering purge gas; a second purge gas delivery pipeline, wherein a first end of the second purge gas delivery pipeline is in communication with the first mixed exhaust gas filtering component, and a second end of the second purge gas delivery pipeline is in communication with the exhaust component for delivering exhaust gas; a third purge gas delivery pipeline, wherein a first end of the third purge gas delivery pipeline is in communication with a purge gas source, and a second end of the third purge gas delivery pipeline is in communication with the second mixed exhaust gas filter component for delivering purge gas; a fourth purge gas delivery pipeline, wherein a first end of the fourth purge gas delivery pipeline is in communication with the second mixed exhaust gas filter component, and a second end of the fourth purge gas delivery pipeline is in communication with the exhaust component, for delivering exhaust gas; a fifth purge gas delivery pipeline, wherein a first end of the fifth purge gas delivery pipeline is in communication with a purge gas source, and a second end of the fifth purge gas delivery pipeline is in communication with the third mixed exhaust gas filter component, for delivering purge gas; A sixth purge gas delivery pipeline, wherein a first end of the sixth purge gas delivery pipeline is connected to the third mixed exhaust gas filter component, and a second end of the sixth purge gas delivery pipeline is connected to the exhaust component, for delivering exhaust gas.

9. The mixed exhaust gas treatment equipment according to claim 8, characterized in that: The third mixed exhaust gas filter component includes a plurality of the seventh gas delivery pipelines, a plurality of the second dry-type adsorption filter tanks, and a plurality of the eighth gas delivery pipelines, and the plurality of the seventh gas delivery pipelines, the plurality of the second dry-type adsorption filter tanks, and the plurality of the eighth gas delivery pipelines correspond to each other one by one; The third mixed exhaust gas filter component further includes: at least one third series pipeline, wherein a first end and a second end of the third series pipeline are respectively connected to the two second dry adsorption filter tanks, for connecting the two second dry adsorption filter tanks in series; and / or The third mixed exhaust gas filter component further includes: At least one third pressure relief pipeline, a first end of the third pressure relief pipeline is connected to the seventh gas delivery pipeline, and a second end of the third pressure relief pipeline is connected to the eighth gas delivery pipeline for pressure relief.

10. The mixed exhaust gas treatment equipment according to claim 8, characterized in that: The third mixed exhaust gas filter component further includes: at least one eleventh on-off valve, the eleventh on-off valve being disposed in the seventh gas delivery pipeline and configured to control the flow of gas through the seventh gas delivery pipeline; and / or The third mixed exhaust gas filter component further includes: at least one twelfth switch valve, the twelfth switch valve being disposed in the eighth gas delivery pipeline and being used to control the flow of gas through the eighth gas delivery pipeline; and / or The third mixed exhaust gas filter component further includes: at least one third pressure sensor, the third pressure sensor being in communication with the second dry adsorption filter canister and configured to monitor the pressure inside the second dry adsorption filter canister; and / or The third mixed exhaust gas filter component further includes: at least one third temperature sensor, the third temperature sensor being in communication with the second dry adsorption filter tank and configured to monitor the temperature inside the second dry adsorption filter tank; and / or The discharge component also includes: at least one fifteenth switch valve, the fifteenth switch valve being disposed in the sixth gas delivery pipeline and being used to control the flow of gas in the sixth gas delivery pipeline; and / or The discharge component also includes: at least one sixteenth switch valve, the sixteenth switch valve being disposed in the exhaust pipe and configured to control flow between the exhaust pipe and the exhaust gas treatment device; and / or The purge component also includes: a seventeenth on-off valve, the seventeenth on-off valve being provided in the first purge gas delivery pipeline and being used for controlling the flow of the first purge gas delivery pipeline; and / or The purge component also includes: an eighteenth on-off valve, the eighteenth on-off valve being provided in the second purge gas delivery pipeline and being used for controlling the flow of the second purge gas delivery pipeline; and / or The purge component also includes: a nineteenth on-off valve, the nineteenth on-off valve being provided in the third purge gas delivery pipeline, for controlling the flow of the third purge gas delivery pipeline; and / or The purge component also includes: a twentieth on-off valve, which is provided in the fourth purge gas delivery pipeline and is used to control the flow of the fourth purge gas delivery pipeline; and / or The purge component also includes: a twenty-first on-off valve, the twenty-first on-off valve being provided in the fifth purge gas delivery pipeline and being used to control the flow of the fifth purge gas delivery pipeline; and / or The purge component also includes: A twenty-second switch valve is provided in the sixth purge gas delivery pipeline, and is used to control the flow of the sixth purge gas delivery pipeline.

11. The mixed exhaust gas treatment equipment according to claim 9, characterized in that: The third mixed exhaust gas filter component further includes: at least one thirteenth switch valve, the thirteenth switch valve being arranged in the third series pipeline for controlling the flow of the third series pipeline; and / or At least one fourteenth switch valve is provided in the third pressure relief pipeline, and is used to control the flow of the third pressure relief pipeline.

12. A semiconductor process system, characterized in that: include: The mixed exhaust gas treatment equipment according to any one of claims 1 to 11.

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